ELECTRONIC DEVICE
An electronic device includes a substrate, a redistribution layer disposed on the substrate, and an electronic component disposed on the redistribution layer and electrically connected to the redistribution layer.
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This application is a continuation application of U.S. application Ser. No. 17/115,755, filed on Dec. 8, 2020. The content of the application is incorporated herein by reference.
BACKGROUND OF THE DISCLOSURE 1. Field of the DisclosureThe present disclosure relates to a high-frequency device, in particular to a high-frequency device using a gas or vacuum as a dielectric layer.
2. Description of the Prior ArtWith the evolution of high-frequency devices, the 5th generation wireless system (5G) is a communication technology of a new generation. When a high-frequency device is placed indoors, signal transmission may be severely blocked. Therefore, the design of high-frequency devices as signal boosters has become one of the current research topics, for example, the application of windows equipped with a (transparent) antenna function to serve as a signal booster.
SUMMARY OF THE DISCLOSUREAn electronic device of the present disclosure includes a substrate, a redistribution layer and an electronic component. The redistribution layer is disposed on the substrate. The electronic component is disposed on the redistribution layer and electrically connected to the redistribution layer.
An electronic device of the present disclosure includes a substrate, a first redistribution layer, a second redistribution layer, and a dielectric layer. The first redistribution layer is disposed on the substrate. The second redistribution layer is disposed on the first redistribution. The dielectric layer is disposed between the first redistribution layer and the second redistribution layer. The dielectric layer has a dissipation factor value less than or equal to 0.03.
These and other objectives of the present disclosure will no doubt become obvious to those of ordinary skill in the art after reading the following detailed description of the embodiment that is illustrated in the various figures and drawings.
The present disclosure may be understood by reference to the following detailed description, taken in conjunction with the drawings as described below. For purposes of illustrative clarity understood, various drawings of this disclosure show a portion of the electronic device, and certain elements in various drawings may not be drawn to scale. In addition, the number and dimension of each device shown in drawings are only illustrative and are not intended to limit the scope of the present disclosure.
Certain terms are used throughout the description and following claims to refer to particular components. As one skilled in the art will understand, electronic equipment manufacturers may refer to a component by different names. This document does not intend to distinguish between components that differ in name but not in function. In the following description and in the claims, the terms “include”, “comprise” and “have” are used in an open-ended fashion, and thus should be interpreted to mean “include, but not limited to . . . ”.
It will be understood that when an element or layer is referred to as being “on another component or on another layer” or “connected to another component or to another layer”, it can be directly on or directly connected to the other element or layer, or intervening elements or layers may be presented. In contrast, when an element is referred to as being “directly on” or “directly connected to” another element or layer, there are no intervening elements or layers presented. In some embodiments of the present disclosure, terms such as “connection”, “interconnection”, etc. regarding bonding and connection, unless specifically defined, may refer to two structures which are in direct contact with each other, or are not in direct contact with each other. It is possible that there are other structures located between these two structures. Moreover, terms such as “connection”, “interconnection” may also include the case where both structures are movable or both structures are fixed. In addition, the term “coupled” includes any direct and indirect electrical connection means.
The terms “about”, “substantially”, “equal”, or “same” generally mean within 20% of a given value or range, or mean within 10%, 5%, 3%, 2%, 1%, or 0.5% of a given value or range. It is possible that the meanings of the terms “about”, “substantially”, “equal”, or “same” may be implied in the absence of explicit indications. The term “in a range between A and B” refers to a scope in which A value, other values between A and B, and B value are inclusive.
Although terms such as first, second, third, etc., may be used to describe diverse constituent elements, such constituent elements are not limited by the terms. The terms are used only to discriminate a constituent element from other constituent elements in the specification. The claims may not use the same terms, but instead may use the terms first, second, third, etc. with respect to the order in which an element is claimed. Accordingly, in the following description, a first constituent element may be a second constituent element in a claim.
In this disclosure, the thickness, length, and width can be measured by using an optical microscope, and the thickness can be measured by a cross-sectional image in an electron microscope, but it is not limited to this. In addition, there may be a certain error in any two values or directions used for comparison. If the first value is equal to the second value, it implies that there may be an error of about 10% between the first value and the second value; if the first direction is perpendicular to the second direction, the angle difference between the first direction and the second direction can be between 80 degrees and 100 degrees; if the first direction is parallel to the second direction, the angle between the first direction and the second direction can be between 0 degrees and 10 degrees
Unless otherwise defined, all terms used here (including technical and scientific terms) have the same meanings commonly understood by the general artisans to whom the disclosures belong here. It is understandable that these terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the relevant technology and the background or context of this disclosure, rather than in an idealized or overly formal way of interpretation, unless otherwise specifically defined here.
It should be noted that the technical features in different embodiments described in the following can be replaced, recombined, or mixed with one another to constitute another embodiment without departing from the spirit of the present disclosure.
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In some embodiments, one of the first electrode 111 and the second electrode 121 is a ground electrode, and the other one is a patch electrode. The first electrode 111 and/or the second electrode 121 may include a single layer or a composite (metal) layer. In some embodiments, the first electrode 111 and/or the second electrode 121 may include a metal material, a transparent conductive material, or a combination thereof. The metal material includes copper, nickel, gold, silver, other suitable materials, or a combination of the above, but it are not limited thereto. The transparent conductive materials include transparent conductive materials such as indium tin oxide (ITO) and indium zinc oxide (IZO), but are not limited thereto.
In some embodiments, the manufacturing method of the first electrode 111 or the second electrode 121 may be described as follows, but the present disclosure is not limited thereto. First, a seed layer may be selectively formed on the first substrate 110 or on the second substrate 120. Afterwards, the first electrode 111 or the second electrode 121 is formed on the seed layer, but it is not limited thereto. The first electrode 111 or the second electrode 121 may be formed by electroplating, sputtering or other suitable processes, but it is not limited thereto.
In some embodiments, the sealant 130 may be disposed between the first substrate 110 and the second substrate 120, and the dielectric layer 136 may be sandwiched between the first substrate 110 and the second substrate 120 by the sealant 130. The first electrode 111 and the second electrode 121, the dielectric layer 136 maybe sealed in the space defined by the sealant 130. The thickness H of the sealant 130 may be approximately equal to the gap G between the first substrate 110 and the second substrate 120, but it is not limited thereto. The sealant 130 may include transparent material, opaque organic material or inorganic material, such as polymer materials including polyethylene oxide, and other suitable materials, but it is not limited thereto. In some embodiments, the sealant 130 may have a function of water-proof or oxygen-proof property, but it is not limited thereto. The sealant 130 may reduce the possibility of the first electrode 111 and/or the second electrode 121 being corroded. For example, the high-frequency device 101 may have an operational region 131 and a non-operational region 132, and the inner edges of the sealant 130 may define the high-frequency device 101 to have an operational region 131 and a non-operational region 132. The operational region 131 may be defined by a region enclosed by the inner edge S1 of the sealant 130 and the first substrate 110 and the second substrate 120. The non-operational region 132 is defined by a region outside of the operational region 131.
In some embodiments, the dielectric layer 136 may be located in the operational region 131. The dielectric layer 136 may have a material of a low Df value, such as a material of a Df value less than or equal to 0.01 or 0.03, but it is not limited thereto. Materials with a low Df value are beneficial to reduce the loss of electromagnetic waves after passing through the dielectric layer 136, and may improve the reliability of the high-frequency device. For example, the dielectric layer 136 may include a gas (such as helium, carbon dioxide or other gases) or vacuum. The Df value of vacuum or s gas is about 0, which is beneficial to improve the reliability of the high-frequency device.
In some embodiments, the first connection pad 140 and the second connection pad 150 may be respectively disposed on the surfaces of the first substrate 110 and the second substrate 120, but are not limited thereto. In some embodiments, the first connection pad 140 may be disposed on the side surface 112 of the first substrate 110 adjacent to the second substrate 120. In some embodiments, the second connection pad 150 may be disposed on the side surface 122 of the second substrate 120 adjacent to the first substrate 110. In some embodiments, the first connection pad 140 may be one of a ground connection pad and a patch connection pad, and the second connection pad 150 may be another of the ground connection pad and the patch connection pad. The second connection pad 150 may be electrically connected to the second electrode 121. In some embodiments, the conductive element 160 may be disposed between the first connection pad 140 and the second connection pad 150, and the first connection pad 140 is electrically connected to the second connection pad 150 via the conductive element 160, but it is not limited thereto. In some embodiments, the conductive element is disposed in the operational region. In some embodiments, the first connection pad 140 and the first electrode 111 may be the same conductive layer or different conductive layers, and the second connection pad 150 and the second electrode 121 may be the same conductive layer or different conductive layers. In this embodiment, the first connection pad 140 is electrically insulated from the first electrode 111, and the first electrode 111 is electrically connected to the bonding pad 170 via other circuits (not shown). The descriptions of the bonding pad 170 are given later.
In some embodiments, at least one of the first connection pad 140 and the second connection pad 150 may include a copper layer, a nickel layer and a gold layer, but it is not limited thereto. In some embodiments, at least one of the first connection pad 140 and the second connection pad 150 may include at least one of a copper layer, a nickel layer, a gold layer or a silver layer, but it is not limited thereto. In some embodiments, the first connection pad 140 or the second connection pad 150 may include a composite metal layer. The stacking layers or materials of the first connection pad 140 and the second connection pad 150 may be the same or different.
In some embodiments, the conductive element 160 may contact with the first connection pad 140 and/or contact with the second connection pad 150, the first connection pad 140 may be electrically connected to the second connection pad 150 via the conductive element 160, but it is not limited thereto. In some embodiments, the conductive element 160 is electrically connected to the first connection pad 160 and the second connection pad 150 via a tin layer. In some embodiments, the conductive element 160 may be not in contact with the sealant 130. The thickness H1 (or diameter) of the conductive element 160 may be less than or equal to the gap G or the thickness H, but it is not limited thereto. In some embodiments, the thickness H1 of the conductive element 160 may be in a range between 3 μm and 500 μm (3 thickness H1≤500 μm), but it is not limited thereto. In some embodiments, the thickness H1 of the conductive element 160 may be in a range between 100 μm and 450 μm (100 μm≤thickness H1≤450 μm). In some embodiments, the thickness H1 of the conductive element 160 may be in a range between 150 μm and 400 μm (150 μm≤thickness H1≤400 μm). The conductive element 160 shown in
In some embodiments (not shown), the conductive particles (such as gold or other materials) or other conductive materials may be selectively mixed in the sealant 130. The first connection pad 140 and the second connection pad 150 may contact with a part of the sealant 130. The first connection pad 140 and the second connection pad 150 may be electrically connected via the conductive particles in the sealant 130, but it is not limited thereto. In some embodiments shown in
In some embodiments, the high-frequency device 101 may include at least one bonding pad 170. The bonding pad 170 is disposed in the non-operational region 132 and is electrically connected to at least one of the first electrode 111 and the second electrode 121. In some embodiments, the bonding pad 170 may be located on the side 112 of the first substrate 110, but it is not limited thereto. In other embodiments (not shown), the bonding pad 170 may be located on the side 122 of the second substrate 120. In some embodiments, the bonding pad 170 is disposed in an outer lead bonding (OLB). In some embodiments, the bonding pad 170 may be electrically connected to the first connection pad 140 and/or to the second connection pad 150, and the bonding pad 170 may be electrically connected to the first connection pad 140 via other circuits (not shown). In some embodiments, the external electronic component 176 may have a bonding pad 182, and the bonding pad 182 may be electrically connected to the bonding pad 170 to control or drive the electronic components of the high-frequency device 101 by the external electronic component 176. In some embodiments, the external electronic component 176 may control at least one of the first electrode 111 and/or the second electrode 121 via the bonding pad 182 and the bonding pad 170. The external electronic component 176 may include an integrated circuit (IC), a circuit board, or other electronic components, but it is not limited thereto. The circuit board may include a flexible printed circuit (FPC) or a rigid circuit board, but it is not limited thereto. As shown in the embodiment of
In some embodiments, the high-frequency device 101 may include a protective layer 180, and the protective layer 180 may be disposed in the non-operational region 132. In some embodiments, the protective layer 180 includes waterproof glue (for example, tuffy). The protective layer 180 may selectively contact (or cover) various elements located in the non-operational region 132. In some embodiments, the protective layer 180 maybe in contact with (or cover) at least one or more of the bonding pad 170, the first substrate 110, the second substrate 120, the sealant 130, the bonding pad 182 and the external electronic component 176, but it is not limited thereto. In some embodiments, the protective layer 180 may fill the void 181 of the non-operational region 132, but it is not limited thereto. The void 181 is a void formed between the panel (that is, including the first substrate 110 and the second substrate 120) and the external electronic component 176, but it is not limited thereto. The protective layer 180 may be used to protect various components which are located in the non-operational region 132 or to reduce the penetration of moisture into various components which are located in the non-operational region 132.
The high-frequency device disclosed in the present disclosure is not limited to the foregoing embodiment. Other embodiments of the present disclosure will be disclosed below. In order to simplify the descriptions and highlight the differences between the embodiments, the same reference numerals are used to label the same elements in the following, and the similar contents are not elaborated again. In addition, please refer to the foregoing embodiments for the conditions of the components and of process steps in the subsequent embodiments, so the details are not elaborated again.
In some embodiments, the first electrode 111, the first connection pad 140 and/or the bonding pad 170 may be formed of the same conductive layer, that is, the first electrode 111, the first connection pad 140 and/or the bonding pad 170 may be formed of the same process, but it is not limited thereto. When the first electrode 111, the first connection pad 140 and/or the bonding pad 170 are formed by the same manufacturing process, the number of the sub-layers of the first electrode 111 is the same as the number of the first connection pad 140 and/or the bonding pad 170, but it is not limited thereto. In some embodiments, the second electrode 121 and the second connection pad 150 maybe formed by the same conductive layer, that is, the second electrode 121 and the second connection pad 150 may be formed by the same manufacturing process, but it is not limited thereto. When the second electrode 121 and the second connection pad 150 are formed by the same manufacturing process, the number of sub-layers of the second electrode 121 is the same as the number of the second connection pad 150, but it is not limited thereto.
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On the other hand, the bonding pad 170A and the bonding pad 170 may be located on the side 112 of the first substrate 110. The first connection pad 140A, the second connection pad 150A and the conductive element 160A may be electrically connected to the bonding pad 170A, and are electrically connected to the external electronic component 176A via the bonding pad 170A so that the external electronic component 176A may be used to drive or control the second electrodes 121. In this example, different external electronic components (such as the external electronic component 176A and the external electronic component 176) may transmit signals to the second electrode 121 via bonding pads (such as the bonding pad 170A and the bonding pad 170) located in different regions, to disperse or to more uniformly transmit signals to the second electrode 121. In other embodiments, the high-frequency device may optionally have more first connection pads, second connection pads, conductive elements and/or bonding pads.
In the structure of the high-frequency device of each embodiment of the present disclosure, the first electrode and the second electrode may be respectively provided on two substrates, and the first electrode and the second electrode are sealed between the two substrates by a sealant so that the first electrode and the second electrode are not prone to be affected by the environment such as moist or oxygen. The configuration is beneficial to the demand of using a high-frequency signal antenna of the present disclosure to serve as an outdoor transparent antenna.
Those skilled in the art will readily observe that numerous modifications and alterations of the device and method may be made while retaining the teachings of the disclosure. Accordingly, the above disclosure should be construed as limited only by the metes and bounds of the appended claims.
Claims
1. An electronic device, comprising:
- a substrate;
- a redistribution layer disposed on the substrate; and
- an electronic component disposed on the redistribution layer and electrically connected to the redistribution layer.
2. The electronic device of claim 1, further comprising: wherein the redistribution layer is located between the electrode and the substrate, and there is a gap existing between the first sub-electrode and the second sub-electrode.
- an electrode comprising a first sub-electrode and a second sub-electrode,
3. The electronic device of claim 2, wherein the electronic component is bonded to the substrate to control the electrode.
4. The electronic device of claim 3, further comprising: wherein the electronic component has a second bonding pad and is electrically connected to the electrode via the first bonding pad and the second bonding pad.
- a first bonding pad,
5. The electronic device of claim 2, wherein the electrode comprises a composite layer.
6. The electronic device of claim 1, wherein the redistribution layer comprises at least one conductive layer and at least one dielectric layer.
7. The electronic device of claim 1, wherein the electronic device is applied to a high-frequency device.
8. The electronic device of claim 7, wherein the high-frequency device is applied to an antenna.
9. An electronic device, comprising: wherein the dielectric layer has a dissipation factor value less than or equal to 0.03.
- a substrate;
- a first redistribution layer disposed on the substrate;
- a second redistribution layer disposed on the first redistribution; and
- a dielectric layer disposed between the first redistribution layer and the second redistribution layer,
10. The electronic device of claim 9, wherein one of the first redistribution layer and the second redistribution layer comprises at least one conductive layer and at least one dielectric layer.
11. The electronic device of claim 9, wherein the electronic device is applied to a high-frequency device.
12. The electronic device of claim 11, wherein the high-frequency device is applied to an antenna.
13. The electronic device of claim 9, wherein the dissipation factor value is less than or equal to 0.01.
Type: Application
Filed: May 1, 2023
Publication Date: Aug 24, 2023
Applicant: InnoLux Corporation (Miao-Li County)
Inventor: Jen-Hai Chi (Miao-Li County)
Application Number: 18/142,001