METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A method of manufacturing a semiconductor device is provided. The method of manufacturing a semiconductor device includes forming a first electrode layer on a substrate, and then forming a stack structure on the first electrode layer, wherein the stack structure comprises a first insulating layer, a gate electrode layer, and a second insulating layer. An opening is formed in the stack structure. A gate dielectric layer is formed on a sidewall of the opening of the stack structure, and an oxide semiconductor layer is formed in the opening, wherein the gate dielectric layer is sandwiched between the oxide semiconductor layer and the gate electrode layer. A second electrode layer is then formed on the stack structure to be in direct contact with the oxide semiconductor layer.
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This application is a divisional application of and claims the priority benefit of U.S. patent application Ser. No. 17/386,565, filed on Jul. 28, 2021, now allowed. The entirety of the above-mentioned patent application is hereby incorporated by reference herein and made a part of this specification.
BACKGROUND Technical FieldThe invention relates to a semiconductor manufacture technique, and particularly relates to a semiconductor device and a method of manufacturing the same.
Description of Related ArtThe semiconductor device such as transistor has been developed for a long time. The transistor includes plane device and vertical device. The plane device is, for example, a thin film transistor, wherein a source electrode and a drain electrode are over a gate electrode, and the channel length (Lg) is defined by the spacing between the source electrode and the drain electrode. However, the channel length is desired to be smaller with the miniaturization of the device size, and thus the Lg of the plane device can not meet the requirement due to the resolution limitation of photolithography.
The vertical device is, for example, a 3D transistor, wherein a vertical channel formed on the substrate, a source electrode and a drain electrode are disposed at two ends of the vertical channel, and the Lg of the vertical device is defined by the thickness of a gate electrode. Therefore, the Lg of vertical device can be made smaller. However, the process of the vertical device is more complicated than the plane device, and it is difficult in the formation and the contact for drain/source/body.
SUMMARYThe invention provides a method of manufacturing a semiconductor device to obtain the semiconductor device having fine channel length.
The method of manufacturing a semiconductor device of one embodiment of the invention includes forming a first electrode layer on a substrate, and then forming a stack structure on the first electrode layer, wherein the stack structure comprises a first insulating layer, a gate electrode layer, and a second insulating layer. An opening is formed in the stack structure. A gate dielectric layer is formed on a sidewall of the opening of the stack structure, and an oxide semiconductor layer is formed in the opening, wherein the gate dielectric layer is sandwiched between the oxide semiconductor layer and the gate electrode layer. A second electrode layer is then formed on the stack structure to be in direct contact with the oxide semiconductor layer.
In one embodiment of the invention, after the step of forming the second electrode layer, the method further comprises patterning the second insulating layer and the gate electrode layer.
In one embodiment of the invention, after the step of forming the second electrode layer, the method further comprises respectively forming electrode contacts connecting to the first electrode layer, the gate electrode layer, and the second electrode layer.
In one embodiment of the invention, the step of forming the gate dielectric layer comprises conformally depositing a dielectric material layer on the stack structure and in the opening, and then etching back the dielectric material layer until the first electrode layer is exposed.
In one embodiment of the invention, the step of forming the stack structure comprises depositing the first insulating layer on the first electrode layer, depositing the gate electrode layer on the first insulating layer, and depositing the second insulating layer on the gate electrode layer.
In one embodiment of the invention, the step of forming the oxide semiconductor layer in the opening comprises blanket depositing an oxide semiconductor material to fill the opening, and then etching back the oxide semiconductor material until the stack structure is exposed.
In one embodiment of the invention, a method of forming the oxide semiconductor layer in the opening comprises a selective deposition process.
In one embodiment of the invention, a material of the oxide semiconductor layer comprises indium-gallium-zinc oxide.
In one embodiment of the invention, the substrate comprises a silicon-on-insulator (SOI) substrate.
Based on the above, since the invention provides a semiconductor device having a planar stack structure containing two source/drain electrodes, a gate electrode layer therebetween, and an oxide semiconductor penetrating through the gate electrode layer, it can realize fine channel length in the semiconductor device by simple process.
To make the aforementioned more comprehensible, several embodiments accompanied with drawings are described in detail as follows.
The accompanying drawings are included to provide a further understanding of the disclosure, and are incorporated in and constitute a part of this specification. The drawings illustrate exemplary embodiments of the disclosure and, together with the description, serve to explain the principles of the disclosure.
Referring to the embodiments below and the accompanied drawings for a sufficient understanding of the invention. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. However, the invention may be implemented in many other different forms and should not be limited to the embodiments described hereinafter. Other embodiments may be utilized and structural, logical, and electrical changes may be made without departing from the scope of the present invention. In the drawings, for clarity, the elements and relative dimensions thereof may not be scaled. For easy understanding, the same elements in the following embodiments will be denoted by the same reference numerals.
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In the first embodiment, the profile of the cross section of the semiconductor device is step-shaped, and thus it is beneficial to interconnection of the semiconductor device. For example, an electrode contact 116 connects to the first electrode layer 102, an electrode contact 118 connects to the gate electrode layer 104, and an electrode contact 120 connects to the second electrode layer 106. Those electrode contacts 116, 118 and 120 can be formed together using the same steps. However, the invention is not limited thereto.
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In summary, the semiconductor device according to the invention comprises a semiconductor device having a planar stack structure containing two source/drain electrodes, a gate electrode layer therebetween, and an oxide semiconductor perpendicularly penetrating through the gate electrode layer, and thus the channel length (Lg) can be defined by the thickness of the gate electrode layer. In other words, according to the invention, fine channel length of the semiconductor device can be accomplished by simple process.
It will be apparent to those skilled in the art that various modifications and variations can be made to the disclosed embodiments without departing from the scope or spirit of the invention. In view of the foregoing, it is intended that the invention covers modifications and variations provided that they fall within the scope of the following claims and their equivalents.
Claims
1. A method of manufacturing a semiconductor device, comprising:
- forming a first electrode layer on a substrate;
- forming a stack structure on the first electrode layer, wherein the stack structure comprises a first insulating layer, a gate electrode layer, and a second insulating layer;
- forming an opening in the stack structure;
- forming a gate dielectric layer on a sidewall of the opening of the stack structure;
- forming an oxide semiconductor layer in the opening, wherein the gate dielectric layer is sandwiched between the oxide semiconductor layer and the gate electrode layer; and
- forming a second electrode layer on the stack structure to be in direct contact with the oxide semiconductor layer.
2. The method of claim 1, wherein after the step of forming the second electrode layer further comprises: patterning the second insulating layer and the gate electrode layer.
3. The method of claim 1, wherein after the step of forming the second electrode layer further comprises: forming a plurality of electrode contacts connecting to the first electrode layer, the gate electrode layer, and the second electrode layer respectively.
4. The method of claim 1, wherein the step of forming the gate dielectric layer comprises:
- conformally depositing a dielectric material layer on the stack structure and in the opening; and
- etching back the dielectric material layer until the first electrode layer is exposed.
5. The method of claim 1, wherein the step of forming the stack structure comprises:
- depositing the first insulating layer on the first electrode layer;
- depositing the gate electrode layer on the first insulating layer; and
- depositing the second insulating layer on the gate electrode layer.
6. The method of claim 1, wherein the step of forming the oxide semiconductor layer in the opening comprises:
- blanket depositing an oxide semiconductor material to fill the opening; and
- etching back the oxide semiconductor material until the stack structure is exposed.
7. The method of claim 1, wherein a method of forming the oxide semiconductor layer in the opening comprises a selective deposition process.
8. The method of claim 1, wherein a material of the oxide semiconductor layer comprises indium-gallium-zinc oxide.
9. The method of claim 1, wherein the substrate comprises a silicon-on-insulator (SOI) substrate.
Type: Application
Filed: Aug 11, 2023
Publication Date: Nov 30, 2023
Applicant: Powerchip Semiconductor Manufacturing Corporation (Hsinchu)
Inventor: Hiroshi Yoshida (Hsinchu City)
Application Number: 18/448,186