Semiconductor device

- Ennostar Corporation
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Description

FIG. 1A is a top perspective view of a semiconductor device showing our design;

FIG. 1B is an enlarged view of a portion of FIG. 1A;

FIG. 2 is a front elevational view thereof;

FIG. 3 is a rear elevational view thereof;

FIG. 4 is a right-side elevational view thereof;

FIG. 5 is a left-side elevational view thereof;

FIG. 6A is a top plan view thereof;

FIG. 6B is an enlarged view of a portion of FIG. 6A; and,

FIG. 7 is a bottom plan view thereof.

The bold broken lines in FIGS. 1A, 1B, 6A and 6B are used for delineating the boundary of the claimed portion and are not used for indicating unclaimed subject matter.

The broken lines illustrate portions of the semiconductor device that form no part of the claimed design.

Claims

The ornamental design for a semiconductor device as shown and described.

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Patent History
Patent number: D1132891
Type: Grant
Filed: Dec 28, 2023
Date of Patent: Jul 7, 2026
Assignee: Ennostar Corporation (Hsinchu City)
Inventors: Yun-Ya Chang (Hsinchu), Sin-Pei Wang (Hsinchu)
Primary Examiner: Justin M Jonaitis
Application Number: 29/923,199
Classifications