Abstract: A method for manufacturing an electrode, e.g., a gate electrode of a MOS transistor, and an electrode and MOS transistor manufactured in accordance with this method. The method includes the steps of forming a first diffusion preventing layer on an underlying layer, forming a mask pattern having an opening on the first diffusion preventing layer, forming a metal layer on a portion of the first diffusion preventing layer exposed by the opening in the mask pattern, forming a metal layer on the exposed portion of the first diffusion preventing layer, forming a second diffusion preventing layer on the resultant structure, etching back the second diffusion preventing layer to leave a remaining portion thereof on the metal layer, removing the mask pattern, and forming a third diffusion preventing layer on exposed portions of the remaining portion of the second diffusion preventing layer, exposed sidewalls of the metal layer, and exposed portions of the first diffusion preventing layer.

Abstract: A MOSFET semiconductor, erasable programmable ROM device on a lightly doped semiconductor substrate comprising field oxide regions in the semiconductor substrate. The field oxide regions extends down into sunken regions in the substrate through the openings. At least one of the field oxide regions is removed from the substrate to provide an opened one of the sunken regions in the substrate below the removed one of the field oxide regions. Ion implanted regions lie in the substrate below the openings. A gate oxide layer over the opened sunken region, and a floating gate over the gate oxide layer. Preferably, a tunnel oxide region is formed on the surface of the device with the floating gate overlying the tunnel oxide region to form an EEPROM device. The exposed sunken region has a V-shaped cross section sunken region extending deep into the substrate.

Abstract: A process for fabricating semiconductor devices having lightly-doped regions in its drain and/or source. The semiconductor device has a gate structure formed on its substrate, and the sidewalls of the gate structure covered by sidewall spacers. The sidewall spacers having a selected thickness obstructs the impurity implantation and constitutes a lightly-doped region in addition to the relatively heavily-doped regions that are not obstructed during the implantation process. Both the lightly- and heavily-doped regions together constitute the drain and/or source of the semiconductor device.

Abstract: A new method for fabricating a microminiature capacitor, on a dynamic random access memory (DRAM) cell, using a single masking level was accomplished. The method involves opening the self-aligned node contact and the area for the bottom electrode of the capacitor, at the same time, using one masking level. The planarization of a low flow temperature glass (BPSG) and an etch back technique is used to define the bottom electrode of the capacitor, which is self-aligned to the etched opening. The resulting capacitor has vertical side walls on the perimeter of the capacitor plate, which increases its area without increasing the lateral area on the DRAM cell. Using one masking level for the fabrication of the capacitor, also eliminates the need to add additional space for the tolerance of a second mask.

Abstract: A DRAM cell and a process for formation of a capacitor of a DRAM cell.

Abstract: An antifuse is provided which includes a first conductive layer, an antifuse layer formed on the first conductive layer, and a second conductive layer formed on the antifuse layer. A portion of the antifuse layer forms a substantially orthogonal angle with the first conductive layer and the second conductive layer. This "corner" formation of the antifuse enhances the electric field at this location during programming, thereby providing a predictable location for the filament, i.e. the conductive path between the first and second conductive layers. This antifuse provides other advantages including: a relatively low programming voltage, good step coverage for the antifuse layer and the upper conductive layer, a low, stable resistance value, and minimal shearing effects on the filament.

Abstract: Technology for forming a fine light beam having a size smaller than the theoretical limit determined by the wavelength of light and characteristics of an objective lens. A beam distribution shifter having two light transmission regions is disposed between a source of light and an objective lens, a phase shifter is provided on one of the two light transmission regions to divide the light passing through the beam distribution shifter into two light fluxes having phases opposite to each other, and the two light fluxes are focused through the objective lens to form a fine light beam having a size smaller than the theoretical limit determined by the wavelength of the light and characteristics of the objective lens due to destructive interference between the two light fluxes.

Abstract: A process is provided for passivating surfaces (12') of III-V microwave monolithic integrated circuit (MMIC) flip chips (40). Essentially, two cured, patterned polyimide layers (10, 28) are applied, one on the chip surface supporting a gold-plated bridge (26) and passivating the surface and the other over the gold-plated bridge to passivate the bridge surface. Further, a silver-titanium composite layer (32) is deposited over a gold-plated bump-post (24), which is then covered by a silver-plated bump (38), in order to prevent scavenging of gold from the bump-post by a subsequent Pb-Sn reflow solder process used to mount the chip to a metallized ceramic substrate. The process of the invention facilitates a more compatible reflow solder silk-screening process with passivated III-V MMIC flip chips, resulting in a more uniform and consistent solder thickness and relieving a tight tolerance requirement on the plated silver bump height uniformity.

Abstract: Reciprocal diffusion is prevented in a SiC electronic device by interposing an intermediate layer composed of W or a W-Si alloy rather than forming the Ni electrode directly on a SiC base, providing a stable electrode for which the contact resistance does not increase even when high temperatures are maintained. Bonding is facilitated when Au layer is formed on top of the Ni layer.

Abstract: In a method for forming a metal wiring layer of a semiconductor device an insulating layer is formed on a semiconductor substrate having impurity-doped regions. A contact hole is formed in the insulating layer to expose an impurity-doped semiconductor region. Thereafter, a diffusion barrier layer is formed on the inner surface of the contact holes and on the surface of the semiconductor substrate exposed by the contact holes. The diffusion barrier layer is heat-treated for two minutes to one hour in a vacuum at a temperature of 450.degree. C. to 650.degree. C. Then, a metal wiring layer of a semiconductor device is formed on the diffusion barrier layer.

Abstract: A production method of a semiconductor device which has a first insulator film formed directly or through at least one layer on a semiconductor substrate, a wiring film containing gold (Au) and formed on the first insulator film, a metal layer covering the surface of the wiring film, and a second insulator film formed on the metal layer to cover its surface. The metal layer is made through an absorption process or phenomenon of a metal included in the metal layer. Preferably, the metal layer is made of tungsten (W) or molybdenum (Mo) and the wiring film is made of a gold (Au) layer and at least one electroconductive layer stacked. An improved adhesion between the wiring layer and an insulator film formed thereon can be obtained.

Abstract: When taper portions of contact holes are etched to form wiring conductors in a semiconductor device, a hydrophobic insulating film having methyl groups on its surface is formed on a SiO.sub.2 film in the low pressure CVD process, using mixed gas of tetraethyl orthosilicate TEOS and ozone O.sub.3. Since the hydrophobic insulating film adheres well to a resist film, etching solution seldom soaks into between the hydrophobic insulating film and the resist film, thus wet etching is performed in the insulating film to obtain satisfactory taper portions of the contact holes.

Abstract: A method of forming a flat surface of an insulator film of a semiconductor device, providing no excessive polishing, polishing waste that is easily removed and an extensive flat surface of the insulator film. A first wiring film is formed on or over a semiconductor substrate and a first insulator film is formed on the first wiring film. The first insulator film and the first wiring film are patterned to a given shape in the same patterning process. A second insulator film is formed on the first insulator film thus patterned. The second insulator film is relatively higher in polishing rate than the first insulator film. Then, a surface of the second insulator film is polished to be flattened under pressure until the first insulator film is exposed. As the first and second insulator films, a silicon nitride film and a silicon dioxide film are preferably used, respectively.

Abstract: A method of forming a metal plug, including a step of flattening by polishing the surface of a contact plug which is formed by etching back a metal layer, for example, a deposited layer of Blk-W on a substrate. It also makes it possible to print a wiring metal layer by a lithographic process which has thus far been considered difficult to apply to Blk-W. In the method of the invention, a contact hole 3 is opened in an insulation film layer 2 on a substrate 1, and, after coating an adhesion layer 4, a metal layer 5 is deposited on the entire surface. Thereafter, the surface of the metal layer 5 is flattened by a polishing operation, and etched back to form a metal plug 7.

Abstract: A method for fabricating gate oxide layers of different thicknesses on a silicon substrate. A field oxide layer is formed on a predetermined portion of the silicon substrate to define first active regions and second active regions. A first gate oxide layer is formed over the first and second active regions. A barrier layer is formed to cover a portion of the first gate oxide layer within the first active regions. The portion of the first gate oxide layer within the second active regions is then removed utilizing the barrier layer as masking. A second gate oxide layer is then formed over the second active regions.

Abstract: A method of processing a semiconductor substrate includes the step of subjecting a semiconductor substrate to a heat treatment under a gaseous atmosphere. The method comprises the step of subjecting a semiconductor substrate to a high temperature heat treatment at temperatures not lower than 1100.degree. C. under a non-oxidizing atmosphere, wherein heat treatments before the high temperature heat treatment applied to the semiconductor substrate are applied under heat treating temperatures and heat treating time which fall within a region defined by a line connecting four points of (900.degree. C., 4 minutes), (800.degree. C., 40 minutes), (700.degree. C., 11 hours) and (600.degree. C., 320 hours) in a graph, in which the heat treating temperature is plotted on the abscissa and the heat treating time is plotted on the ordinate of the graph.

Abstract: A silicon nitride sintered body characterized by comprising crystal grains having a linear density of 60 to 120 per 50 .mu.m length as measured in an arbitrary two-dimensional section of the sintered body. The silicon nitride sintered body has a shock compressive elasticity limit (Hugoniot-elastic limit) of 15 GPa or more and is substantially composed of crystal phases of .alpha.-silicon nitride and .beta.'-sialon. The percentages of the .alpha.-silicon nitride and .beta.'-sialon are not more than 30% and not less than 70%, respectively. The silicon nitride sintered body is particularly excellent in mechanical strengths at room temperature as well as in productivity and cost efficiency and is useful for applications as the material of parts where a particularly high impact strength is required, such as a valve train mechanism for automobile parts.

Abstract: The invention relates to fused ceramic beads, which have the following chemical composition in % by weight on the basis of the oxides:40 to 95% of ZrO.sub.2 and HfO.sub.2 ;at least one of Y.sub.2 O.sub.3 and CeO.sub.2, with the provisos that Y.sub.2 O.sub.3, when present, represents 0.1 to 10% and CeO.sub.2, when present, represents 1 to 25%, the total of Y.sub.2 O.sub.3 and CeO.sub.2 representing 0.1 to 25%;a quantity of SiO.sub.2 representing 10 to 45% of the composition when CeO.sub.2 is absent from the composition and 0.5 to 45% when CeO.sub.2 is present in the composition. Application to grinding and to dispersion in wet medium is provided.

Abstract: A method of forming a ceramic having a smooth ceramic surface and an assembly for forming ceramics having a flat and smooth ceramic surface are disclosed. A greenware precursor is disposed between a greenware base and a greenware cover. A frame is disposed between the greenware base and greenware cover for limiting compression of the greenware article to an amount which allows formation of a smooth ceramic surface during densification of the greenware precursor. The greenware base, greenware cover and greenware precursor are densified to cause the greenware precursor to form a ceramic having a smooth ceramic surface.

Abstract: The present invention relates to non-magnetic ceramic substrate material for magnetic head having similar thermal expansivity to the metal magnetic thin film, abrasion resistance during contact traveling of the magnetic tape and good processability and thus increasing lifetime by preventing exfoliation and crack of the magnetic thin film. The material comprises 10-35 mol % of CaO, 10-40 mol % of TiO.sub.2, 10-60 mol % of NiO and 10-50 mol % of CoO.

Abstract: The present invention provides an infrared ray transmitting material, even large-sized one being manufacturable at a low price, consisting of a polycrystal not liable to cleavage, which makes only a slight absorption of infrared rays all over the region of 8-11 .mu.m wave lengths, thus being highly transmissive. The material is a polycrystalline barium fluoride sintered body excellent in transmission to infrared region of 8-11 .mu.m wave lengths, one that is most excellent in the infrared transmission being produced by a method comprising the hot press sintering and the HIP treatment in combination, one that gives somewhat inferior transmission but which is low-priced by a method comprising the CIP molding and the normal pressure sintering in combination, and one that regarded as intermediate between the aforementioned two by a method comprising the CIP molding, normal-pressure sintering and the HIP treatment in combination, in all cases entirely without addition of any binder or sintering aid.

Abstract: In the process of bisphenol-A systhesis a method for controlling the water content of the resultant cation-exchanger bed wherein an acid ion-exchanger resin in the form of a sulphonated styrene-divinylbenzene copolymer is washed with phenol and the resulted washing is contacted with a basic ion-exchanger resin. Water is removed from the washing by distillation, and the dewatered phenol is recycled to wash the cation-exchanger bed. The catalyst bed is then washed with a mixture of phenol acetone and water, and this washing is contacted with the basic ion-exchange resin and recycled to wash the cation exchanger bed so as to obtain the desired moisture content.

Abstract: An ionic metallocene catalyst for olefin polymerization which comprises: (1) a cyclopentadienyl-type ligand, a Group IVB transition metal, and alkyl, aryl, or hydride substituents, as a cation, and (2) a weakly coordinating anion comprising boron substituted with halogenated, such as tetra fluoro, aryl substituents preferably containing silylalkyl substitution, such as para-silyl t-butyldimethyl.

Abstract: The invention concerns a catalytic composition and a process for the dimerization, codimerization or oligomerization of olefins, said composition comprising a mixture of at least one bivalent nickel complex which contains two tertiary phosphine molecules, at least one nickel compound or complex compound which contains neither water nor phosphine, and at least one alkylaluminum halide. The mixture is particularly for use in ionic type non aqueous liquid compositions, such as those formed by quaternary ammonium halides and/or quaternary phosphonium halides with aluminum halides and/or alkylaluminum halides.

Abstract: Provided are improved catalyst compositions for use in oxidizing carbon monoxide and methods of preparing these catalysts. The catalyst compositions are particularly useful at ambient temperatures. The catalyst compositions, prepared by a coprecipitation method, comprise an oxide of cobalt as the principal component with one or more metals selected from the group consisting of manganese (Mn), aluminum (Al), bismuth (Bi), cerium (Ce), chromium (Cr), copper (Cu), iron (Fe), lanthanum (La), magnesium (Mg), titanium (Ti), zinc (Zn), and zirconium (Zr).

Abstract: A catalyst for the production of ethylene oxide which contains silver, tungsten, cesium and, in some cases, an alkaline metal other than cesium, an alkaline-earth metal, a rare-earth metal, and/or metal selected from Groups I B, II B, III B, IV A, IV B, V A, V B and VI A of the Periodic Table and tellurium. The use of the catalyst of this invention provides high selectivity in the production of ethylene oxide by the vapor contact oxidation of ethylene.

Abstract: This invention concerns highly reactive reagents and compositions for purifying exhaust gases and flue gases and for purifying wastewater as well as the processes for producing same and use thereof.The reagents and compositions are mixtures of calcium hydroxide with additives, especially clays, powdered bricks, carbon products such as coal dust and flue ash and optionally water glass which are already porous due to their special production and have a high specific surface area of up to about 200 m.sup.2 /g.Using these sorbents, hydrocarbons and halogenated hydrocarbons, dioxins and furans in addition to heavy metals can be removed from exhaust gases and wastewater. Other advantages include the easy setup of the resulting products and their great safety for dumping.

Abstract: A pseudobioaffinity chromatography adsorbent adapted for use in selectively adsorbing immunoglobulins. In one embodiment, the adsorbent comprises: (a) a solid support material; and (b) a ligand immobilized on the surface of the solid support material, said ligand being a compound of the formula ##STR1## wherein Y.sub.1 is selected from the group consisting of S, SCH.sub.3.sup.+, O, NH, NCH.sub.3, CH.sub.2 and CR.sub.1 R.sub.2 wherein at least one of R.sub.1 and R.sub.2 is not hydrogen; wherein each of Y.sub.2, Y.sub.3 and Y.sub.4 is selected from the group consisting of N, NCH.sub.3.sup.+, CH, and CR wherein R is not hydrogen; and wherein at least two of Y.sub.1, Y.sub.2, Y.sub.3 and Y.sub.4 are neither CH.sub.2, CH, CR nor CR.sub.1 R.sub.2.

Abstract: An apparatus for catalytically decontaminating exhaust gases, preferably for motor vehicle engines, includes a metal carrier body having a plurality of corrugated, or smooth and corrugated, sheet metal layers. The sheet metal layers have smooth end segments overlapping one another and being disposed as an outer layer on the periphery of the metal carrier body. A jacket encompasses the metal carrier body. At least one weld seam may simultaneously connect the smooth end segments to one another and to the jacket. A mechanical retaining device may form-lockingly secure the metal carrier body in the axial direction in the jacket while engaging an end surface of the outer layer.

Abstract: A heat transfer image-receiving sheet including a substrate sheet and a dye-receiving layer provided on at least one surface thereof. The dye-receiving layer comprises a polyester resin and a polyurethane resin whose diol component comprises a compound having the following formula: ##STR1## wherein u, w, x, y and z respectively represent an integer of 0 to 10, provided that at least one of u, w, x, y and z is not 0, R is an alkylene group, a phenylene group or an alkylene oxide group.

Abstract: The disclosure herein relates to the safening of crops from injury by herbicidal pyrazolosulfonylureas alone or combined with co-herbicides from various classes of chemistry, using various antidotal compounds known in the art.

Abstract: Herbicidal compositions, characterized in that they comprise: (a) as active ingredient, a herbicidally effective amount of a mixture comprising HERB1, known under the chemical name of 1-methyl-3- 2-fluoro-4-chloro-5-(ethoxycarbonylmethoxy)phenyl!-4-chloro-5- difluoromethoxypyrazole (I), and a second herbicide (II) selected from the group consisting of diflufenican, bromoxynil, flurtamone, aclonifen and isoproturon; and (b) an agriculturally acceptable carrier therefor.

Abstract: This invention relates to glutarimide compounds exhibiting herbicidal activity having the structure ##STR1## wherein A is carbonyl, thiocarbonyl or methylene, Al is carbonyl or methylene, Q is O or (CH.sub.2).sub.n where n is 0 or 1, D is CH or N and R, R.sup.1, R.sup.2, T, X, Y and Z are as defined within, compositions containing these compounds and methods of using these compounds as herbicides and algicides.

Abstract: Herbicidal haloacetic acid derivatives of the formula: ##STR1## and salts thereof, where: A is --N.dbd. or --CH.dbd.;X is halo;R.sup.1 and R.sup.2, which may be the same or different, each represent alkyl, alkoxy, haloalkyl, haloalkoxy, halo, alkylamino or dialkylamino;R.sup.3 is --CN, --COOR.sup.5, --CONR.sup.6 R.sup.7, --CSNH.sub.2, --CHO, --CH.dbd.Z, --CH(OAlkyl).sub.2, --CH.sub.2 OH, --CH.sub.2 OR.sup.9, or a substituted or unsubstituted 5- or 6-membered heterocyclic group linked via a ring carbon atom which is between two ring heteroatoms;R.sup.4 is H, or a substituted or unsubstituted alkyl, alkenyl, alkynyl, cycloalkyl, aryl or aralkyl group;with R.sup.5, R.sup.6, R.sup.7, R.sup.9,and Z as defined in the specification.

Abstract: Superconductors using oxide superconducting materials having pinning centers inside crystal grains are enhanced in transmissible critical current density and allowed to have a high critical current density even in the magnetic field. A superconductor is produced comprising superconducting materials having a high irreversible magnetic field where the c axes of their crystals are oriented in one direction. This can be practically realized by heat-treating a superconducting material having the composition (Tl.sub.1-X1-X2 Pb.sub.X1 Bi.sub.X2)(Sr.sub.1-X3 Ba.sub.X3).sub.2 Ca.sub.2 Cu.sub.3 O.sub.9+X4 together with Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.8 having a tendency of growing in the form of plate crystal. Various apparatuses capable of working under cooling with liquid nitrogen let alone with liquid helium and having a high superconducting critical current density even in a high magnetic field can be produced.

Abstract: A process for preparing a fluid additive comprises (1) mixing a viscosifier such as a water-soluble polymer with water to form a viscosified water; (2) contacting a glycol-based polymer with the viscosified water followed by mixing to prepare a glycol-viscosified water mixture; and (3) contacting at least one sulfonated asphalt with the glycol-viscosified water mixture wherein the fluid additive comprises water, a viscosifier, a glycol-based polymer, and at least one sulfonated asphalt. Also disclosed is a process for using the fluid additive in drilling applications.

Abstract: Described are methyl, substituted propyl-substituted pentamethyl indane derivatives defined according to the structure: ##STR1## wherein R.sub.1 represents chloro, hydroxyl or OR.sub.6 ; and R.sub.5 represents methyl or hydrogen with the proviso that when R.sub.1 is chloro, R.sub.5 is hydrogen, and wherein the structure represents a mixture wherein in the mixture in one of the compounds R.sub.4 and R.sub.4 ' are both methyl and R.sub.7 is methyl (about 90% by weight); and in the other compounds one of R.sub.4 or R.sub.4 ' is methyl and the other is ethyl (about 10% by weight of the compounds) and R.sub.7 is hydrogen; and uses thereof in augmenting, enhancing or imparting aromas in or to perfume compositions.Also described are processes for preparing such methyl, substituted propyl-substituted pentamethyl indane derivatives using as a starting material the mixture of compounds defined according to the structure: ##STR2## also know as GALAXOLIDE.RTM. (trademark of International Flavors & Fragrances Inc.).

Abstract: Novel peptides of the formula ##STR1## in which R.sup.1, R.sup.2, X, A, R.sup.3, B, D, E, R.sup.7, M, Q, a, b and d have the meanings stated in the description, and the preparation thereof are described. The novel substances have an antineoplastic effect.

Abstract: A compound having antimicrobial activity of the following general formula: ##STR1## wherein R.sup.1 is hydrogen or hydroxy, R.sup.2 is hydrogen or hydroxy, R.sup.3 is hydroxy or hydroxysulfonyloxy, with proviso that when R.sup.1 is hydrogen, R.sup.2 is hydrogen, or a phamaceutically acceptable salt thereof. The compound can be used in a method for treating infectious diseases caused by pathogenic microorganism.

Abstract: Methods are disclosed for producing thrombin. The protein is produced from host cells transformed or transfected with DNA construct(s) containing information necessary to direct the expression of thrombin precursors. The DNA constructs generally include the following operably linked elements: a transcriptional promoter, DNA sequence encoding a gla-domainless prothrombin, and a transcriptional terminator. Thrombin precursors produced from transformed or transfected host cells are activated either in vivo or in vitro.

Abstract: Decapaptide and undecapaptides substituted on the N-terminal nitrogen atom by acyl groups which include furo-2-yl, isonicotinyl, nicotinyl, 2-, 3-, and 4-quinolinecarbonyl, shikimyl, dihydroshikimyl, and tetrahydrofur-2-oyl are potent antagonists of LHRH and are useful for suppressing the levels of sex hormones in mammals.

Abstract: Disclosed herein are pentapeptide derivatives of the formula X--NR.sup.1 --CH(R.sup.2)--C(W)--NH--CR.sup.3 (R.sup.4)--C(W.sup.2)--NR.sup.5 --CH CH.sub.2 C(O)--Y!--C(W.sup.3)--NH--CR.sup.6 -- CR.sup.7 (R.sup.8)--COOH!--C(W.sup.4)--NH--CR.sup.9 (R.sup.10)--Z wherein X is a terminal group, for example, alkanoyl or phenylalkanoyl radicals, R.sup.1 is hydrogen, alkyl or phenylalkyl, R.sup.2, R.sup.4 and R.sup.10 are selected from amino acid or derived amino acid residues, R.sup.3, R.sup.5, R.sup.6, R.sup.7, R.sup.8 and R.sup.9 are hydrogen or alkyl or R.sup.7 and R.sup.8 are joined to form a cycloalkyl, W.sup.1, W.sup.2, W.sup.3 and W.sup.4 are oxo or thioxo, Y is, for example, an alkoxy or a mono or disubstituted amino, and Z is a terminal group, for example, COOH or CH.sub.2 OH. The derivatives are useful for treating herpes infections.

Abstract: Pro-cytotoxic drug conjugates for anticancer therapy comprising a homing agent first moiety, a spacer molecule second moiety covalently linked to the homing agent, and a third moiety covalently linked to the second moiety consisting of a pro-cytotoxic drug that is non-toxic extracellularly but that, after internalization of the conjugate by proliferating tumor cells, is metabolized by one or more endogenous intracellular enzymes to a cytotoxic metabolic product, so that cell growth is arrested or the cells killed. Preferred procytotoxic drugs are carboxyphosphamide or carboxyisophosphamide.

Abstract: Glycosides having neotigogenin aglycone moieties, administered orally to mammals are shown to inhibit the absorption of cholesterol. These compounds are useful in the treatment of hypercholesterolemia. Particular compounds are derived from tomato seeds and include neotigogenin trisaccharide.

Abstract: O-derivatized alginic acid antigens capable of eliciting opsonizing antibodies in vivo are described. The O-derivatized antigens show enhanced antigenicity and immunogenicity relative to native, non-O-derivatized alginic acid antigens, particularly the MEP antigen of P. aeruginosa. Pharmaceutical compositions containing the O-derivatized antigens of the invention are also described. The invention also pertains to use of the compositions as vaccines, in immunodiagnostic assays, and in methods for producing monoclonal antibodies reactive against the antigen.Methods for forming O-derivatized alginic acid antigens of the invention are described. A non-O-derivatized starting material is reacted in a solvent with an alkyl anhydride derived from a fatty acid.

Abstract: The present invention is directed to anticoccidial methods, animal feed premixes, and animal feeds, employing a specified o-phenylenediamine or benzimidazole. The present invention is also directed to anticoccidial methods, animal feed premixes, and animal feeds employing two active agents. In such combined therapy, a first substance is a polyether antibiotic, and the second substance is a designated o-phenylenediamine, benzimidazole, or benzimidazoline.

Abstract: An isolated, substantially pure, novel compound possessing HIV reverse transcriptase inhibitory activity, and method of preparing same are described.

Abstract: Wound treatment compositions include an oxidized cross-linked polysaccharide which has a chemically induced charge. Preferred polysaccharides are cross-linked dextrans. A charge is preferably provided by diethylaminoethyl groups (DEAE groups) or carboxymethyl groups. The oxidized cross-linked polysaccharide can be applied as a powder directly to a wound site. Alternatively, the oxidized cross-linked polysaccharide can be combined with a delivery vehicle to form a liquid or past to be applied to a wound site.

Abstract: The use of a hydroxyethyl starch specification with a molecular weight M.sub.W of 110,000 to 150,000, a substitution level MS of 0.38 to 0.5, a substitution level DS of 0.32 to 0.45, and a C.sub.2 /C.sub.6 ratio from 8 to 20 for improvement of microcirculation in a peripheral arterial circulation disorder, in particular in already existing peripheral arterial occlusive disease in Stage II according to Fontaine. This hydroxyethyl starch specification can be used in suitable concentrations, e.g., as 6 wt.-% or 10 wt.-% solution, whereby these solutions optionally contain conventional adjuvants and additives.

Abstract: The present invention relates to a compound of formula (I) ##STR1## wherein (x) and (y) are single or double bonds; A is a ##STR2## R and R.sup.3 are hydrogen or acyl; R.sup.1 is hydrogen or fluorine;and wherein:when (y) is a single bond, R.sup.2 is hydrogen, fluorine methyl, trifluoromethyl;when (y) is a double bond, R.sup.2 is methylene provided that when one of (x) or (y) is a double bond the other is a single bond and at least one of R.sub.1 and R.sub.2 is fluorine or trifluoromethyl or a pharmaceutically acceptable salt thereof. The compounds of formula (I) are useful as aromatase inhibitors.