Abstract: The invention relates to an X-ray system which includes an X-ray source and an X-ray detector for deriving an image signal. The X-ray detector includes an X-ray matrix sensor, such as an FDXD, which includes a matrix of sensor elements. Preferably, the sensor elements are light-sensitive &agr;-Si sensor elements (photodiodes) and the FDXD is provided with a scintillator layer which converts X-rays into light. The sensor elements generate electric charges that are read out in the form of an image signal that represents the X-ray image.

Abstract: A portable information device such as a portable telephone, portable electronic mail device or portable navigator capable of measuring UV-rays with no deterioration of the display function is provided. In the device, a UV-ray sensor is disposed in an information display region. The UV-sensor has light sensitivity only to UV-rays and preferably has a light receiving surface made of a compound semiconductor.

Abstract: A scanning microscope. An objective lens receives light emitted from a sample in object space and propagates it to image space thereof. A collection lens receives light from the objective lens and propagates it to a focal point in image space of the collection lens. A motor has an axis of rotation that is offset from and extends in substantially the same direction as the optical axis. The motor rotates the objective lens about the axis of rotation to scan across a sample in object space of said objective lens. The sample is mounted on a stage. After each rotation of the objective lens, the stage is advanced in a radial direction with respect to the axis of rotation so that each subsequent scan covers a new part of the sample. For fluorescence microscopy, a laser light source is provided. A wavelength-selective beamsplitter directs the laser light toward the objective lens, while allowing fluorescence or reflected light emitted from the sample to pass through to the collection lens.

Abstract: In the present invention, a light source portion including a laser resonator of a laser unit is housed in an environment control chamber where the main body of the exposure apparatus including a projection optical system is also housed, and temperature control of the main body of the exposure apparatus and the light source portion is performed so as to maintain the temperature of the entire optical system within the chamber uniform. Thus, the footprint of the apparatus can be reduced compared with when the whole laser unit is arranged separately from the main body of the exposure apparatus. Shift of the center wavelength and change in the spectral half-width and the degree of energy concentration can be avoided, and variation of image forming characteristics including the chromatic aberration of the projection optical system due to the wavelength shift can be suppressed to a minimum.

Abstract: An exposure apparatus includes a plurality of purge spaces delimited along the optical path between the laser light source and the substrate by housings the boundary members of which are invisible to the exposing light, and pressure regulating unit for exercising control in such a manner that the pressure within each purge space attains a predetermined value. In the exposure apparatus that is purged in sections, therefore, it is possible to reduce the amount of deformation of the end faces between mutually adjacent purge spaces, e.g., the end face of a projection optics unit.

Abstract: An image information read-out apparatus includes an image read-out system which is provided with a line reading light source for scanning a recording medium with a line reading light beam and reads out image information from the recording medium in response to the line reading light source scanning the recording medium, and an image read-out system moving mechanism which moves the image read-out system inclusive of the recording medium and the line reading light source. A scanning detecting system detects that the line reading light source is scanning the recording medium with the line reading light beam, and an alarm informs the operator that the line reading light source is scanning the recording medium with the line reading light beam when the scanning detecting system detects the fact.

Abstract: A latching-valve system (10) includes a piezoelectric transducer (44) mounted on its housing (16). To change the valve's state, a microcontroller (54) causes a valve driver (58) to drive current through the actuator's coil (12). It continues driving current through the coil (12) until the transducer's output reaches a magnitude characteristic of the disturbance that typically results when the actuator's armature (22) reaches the end of its travel At that point, the microcontroller (54) stops driving current through the coil. If the characteristic sound does not occur within a predetermined duration, the microcontroller (54) causes a voltage-multiplier circuit (Q1, L1, D1) to increase the voltage that the valve driver (58) applies to the coil.

Abstract: A method and a device for activating an electromagnetic consumer having a movable element, in particular a solenoid valve for controlling the metering of fuel into an internal combustion engine. Within a time window, a switching instant at which the movable element reaches a certain position is determined. The duration of the time window can be defined so that the current flowing through the consumer during the time window does not exceed a threshold value.

Abstract: A precision controller of the movement of at least a first fluid, includes a precision motor. Valve apparatus is operably coupled to the precision motor. Orifice apparatus is fluidly coupled to a source of fluid and to the valve apparatus, whereby actuation of the valve apparatus by the precision motor acts to selectively expose and cover the orifice to implement fluid valving.

Abstract: An improved linearized flow control valve assembly maintains a substantially consistent linear relationship between the input driving device (e.g., motor shaft) and the throughput of fluid through a valved passageway and the angle of the valve member within the passageway. Additionally, an improved linearized flow control valve assembly includes a valve position detector and signal generator which determines the position of the valve member and produces a signal representative of said position. The valve position detector and signal generator is adapted to interface with the linearizing mechanism of the valve assembly and generate the output signal as a function of a linear displacement associated with the linearizing mechanism.

Abstract: A plurality of grooves 32 are arranged on the inner circumferential surface of a first sleeve 19 so as to extend in the axial direction of the first sleeve 19. The plurality of grooves 32 are arranged at equal intervals around a center axis of the first sleeve 19 in the same sectional area of the first sleeve 19. Each groove 32 is formed with a circular cross section, and each groove 32 has a sufficient depth in the inner circumferential surface of the first sleeve 19 to reliably collect foreign matter in the groove 32. Each groove 32 has the same length as that of the first sleeve 19 in the axial direction of the first sleeve 19, and both ends of each groove 32 are opened on both end surfaces of the first sleeve 19.

Abstract: In an electromagnetic valve, a composite valve case has a cylindrical hollow and a composite valve body formed in spool shape is slidably housed in the cylindrical hollow. The composite valve body has not only an inherent valve function for changing fluid path area according to its movement in the cylindrical hollow but also an armature function for constituting a magnetic circuit. The composite valve case has not only a cylinder function for allowing the valve body to slidably move but also a stator function for constituting a magnetic circuit.

Abstract: Governor valve device for a pressure fluid operated tool having a ball valve (23, 24), the valve ball (24) of which is provided in a cavity (25), open towards the seal ring (23) of the valve, in a movable piston (26). A spring-loaded member (30) urges the valve ball against the seal ring. By movement of the piston, the ball can be moved out of and into, respectively, a sealing position against the seal ring in order to permit and to prevent, respectively, the passage of pressure fluid to a drive chamber (17) in the tool.

Abstract: A pressure compensating element (8) for a control valve (3) for controlling an overflow of a medium from a first pressure space (1) into a second pressure space (2) has a diaphragm (9) separating the pressure spaces (1, 2) from one another. The pressure compensating element (8) compensates forces acting on a valve body (5) of the control valve (3) and generated by pressure differences in the pressure spaces (1, 2). However, an overflow of a medium from one pressure space (1) into the other pressure space (2) takes place solely in the region of the control valve (3).

Abstract: A fire extinguishment composition is provided which demonstrates excellent synergistic effects of component materials. The fire extinguishment composition includes an effective amount of a first flame extinguishment agent and an effective amount of a second flame extinguishment agent. The first flame extinguishment agent may be any chemical substance which is capable of extinguishing a flame by decreasing the amount of oxygen concentration in an atmosphere required to support combustion, by decreasing the flame temperature, or combinations of the two mechanisms. The second flame extinguishing agent is any chemical substance which is capable of releasing an effective amount of chemical fragments so as to interfere with a chemical chain mechanism responsible for propagation of the flame.

Abstract: A process for forming a thermally stable low-dielectric constant material is provided. A gas mixture is prepared to form a fluorinated amorphous carbon (a-C:F) material. The gas mixture is mixed with a boron-containing gas.

Abstract: Provided is an oxygen absorbing composition and an oxygen absorbing resin composition employing such oxygen absorbing composition, which demonstrate a favorable oxygen absorbing performance even in a low-humidity environment. Use of such oxygen absorbing composition and oxygen absorbing resin composition allows preservation of medicines or foods etc. which are in a dry state and disfavoring moisture.

Abstract: Application of an alkaline earth metal salt selected from calcium and strontium salts can steadily denature the allergens those exist in the environment without any coloring trouble on the treated material.

Abstract: Conductive paste for the electrical industry based on at least one elastomer (10) and on an admixture of conducting particles in the form of fibers (20), in which the fibers (20) are flexible and have been embedded in the elastomer (10) in random orientation and with formation of a large number of contact points.

Abstract: It has been discovered that less expensive, and in some cases synergistically effective anti-static additive blends may be added to hydrocarbon fuels to improve the conductivity thereof. The blend includes an anti-static amount of at least one hydrocarbon soluble copolymer of an alkylvinyl monomer and a cationic vinyl monomer and an anti-static amount of at least one hydrocarbon soluble polysulfone copolymer of at least one olefin and sulfur dioxide. Optional ingredients include polymeric polyamines and aryl sulfonic acids.

Abstract: The Tahoe Rescue Tool is a precision lifting hoist that can be used to lift and lower people and equipment with precision and safety not available with other existing designs. The Tahoe Rescue Tool combines a motorized capstan winch with an integral swivel base plate that incorporates guide rollers.

Abstract: Devices and methods for strengthening the upper portions of the support posts for guardrails and guardrail end treatments against the forces that are imparted to the post during an impact. The upper portions of support posts, particularly the areas proximate the bolt connection, are reinforced. Preferably, a compressive force is applied to those areas as well by the reinforcements. In one embodiment, reinforcement for the upper portion of the post is provided by metal banding that is disposed around the periphery of the post. Alternative exemplary embodiments are also described in which reinforcement to the upper portion of the post is provided by plates that are secured into place on a location proximate the connection bolt and by a metal cap that sits atop the post. In another embodiment, the drilled hole and connection bolt are eliminated.

Abstract: Mounting devices for mounting items such as signs to chainlink fences. The devices have at least one tab punched out of each end of the mounting and a portion of the chainlink fence is received between the tab and the remainder of the mounting device, which attaches the mounting device to the fence. The mounting device has apertures which will receive fasteners to secure a sign to the mounting device which in turn is secured to the fence.

Abstract: A fence cap and a fence cap system for bridging a gap between a corner of a first fence panel and a corner of an attached second fence panel by bridging and forming a closure over a gap between a corner of a first fence panel and a corner of an attached second fence panel.

Abstract: In the drawn-out interconnection structure of the present invention, a storage node (SN) groove extending from a region, and a groove-shape drawn-out electrode is formed on the inner wall of storage node (SN) groove. An extended pad electrode portion extending from groove-shape drawn-out electrode is provided above storage node (SN) groove. Also provided is a contact plug that penetrates through extended pad electrode portion and that connects aluminum interconnection and extended pad electrode portion in a layer above extended pad electrode portion. With this arrangement, the structure of an interconnection drawn from an electrode of a semiconductor device can be obtained which allows the production of a cell transistor TEG capable of performing a reliable and stable measurement of the cell transistor characteristics.

Abstract: The invention relates to a semiconductor device comprising a bond pad structure, which bond pad structure enables analyses to be carried out at a level of a metal layer of the semiconductor device and comprises a matrix comprising trenches filled with a conductive material, which matrix is electrically contacted by the metal layer.

Abstract: An electro-optical device with a pixel portion of enhanced definition is provided, which uses pixels having a novel structure so that the number of stages of a source signal line side driver circuit is reduced to half the number of pixels in the horizontal direction, thereby making a space for placing the driver circuit and increasing the aperture ratio. One horizontal period is divided into the former half and the latter half. Signals for two adjacent pixels are successively inputted to one source signal line. A pixel selecting portion is provided between the two adjacent pixels. The signal selecting portion selects one of the pixels in the former half of one horizontal period so that a signal is written in the pixel whereas it selects the other pixel during the latter half of the horizontal period so that a signal is written in the pixel. Since one source signal line is shared between two adjacent pixels, the invention is advantageous also in terms of aperture ratio.

Abstract: A thin film transistor is disclosed, including an insulating substrate, a semiconductor layer formed on the insulating substrate, the semiconductor layer having an active region and an impurity region, a gate insulating layer formed on the active region of the semiconductor layer, a first gate metal layer formed on a predetermined portion of the active region of the semiconductor layer to define a channel region, and a second gate metal layer formed on the first gate metal layer. The first and second gate metal layers have different compositions, such that the second gate metal layer etches faster than the first gate metal layer, thereby preventing formation of a hillock. A first protective layer is formed over the structure, then a light shielding layer, and then a second protective layer is formed over the light shielding layer.

Abstract: At least one of a semiconductor thin-film for forming a picture display portion and a semiconductor thin-film for forming a peripheral circuit portion, which are accumulated on one common insulative substrate, is constructed with a semiconductor thin-film having a plural number of semiconductor crystalline portions formed to be divided and disposed in a matrix-like, and TFTs are provided in the semiconductor thin-film by bringing those semiconductor single crystal portions into active portions thereof. For that purpose, a crystallization accelerating material is adhered at the position of lattice points of a matrix and is treated with heating process, for forming the single crystal portions disposed in the matrix-like manner, so as to form the TFTs on the surface thereof, thereby completing the thin-film semiconductor integrated circuit device.

Abstract: In a substrate, a portion for forming wiring extending to a connection terminal is provided with a recess. The connection terminal and the wiring are covered by an interlayer insulating film, and an opening is provided in a portion corresponding to the connection terminal. Thereby, a difference in level between the connection terminal and the wiring extending thereto is reduced.

Abstract: A light-emitting device is produced at a decreased cost by inspecting defects in the pixels in the step of fabrication. TFTs possessed by the pixels on the element substrate and TFTs possessed by the peripheral drive circuits are inspected by using the inspection device to detect defects in a step in a process for finishing the light-emitting device. This makes it possible to decrease the loss that results when the defective products are processed through up to the final step, and to improve the yield by repairing the defective products in a step of repairing.

Abstract: A DFB semiconductor laser device including: a semiconductor substrate; and an active layer and a diffraction grating overlying the semiconductor substrate, the diffraction grating having a composition of GaInNAs(Sb) and absorbing light having a laser emission wavelength of the active layer. The DFB semiconductor laser device having a higher SMSR can be provided which stably operates in a wider range of injection current by proving the diffraction grating formed by the GaInNAs(Sb) having the composition for efficiently absorbing light which has the laser emission wavelength of the active layer.

Abstract: In a method of manufacturing a semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of InY1Ga1-Y1N (Y1≧0) and a quantum well layer being made of InY2Ga1-Y2N (Y2>Y1 and Y2>0) on the first semiconductor layer; and forming a second semiconductor layer on the light-emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.

Abstract: A surface-emitting light-emitting diode having increased light emission is provided.

Abstract: There are provided a semiconductor substrate and a semiconductor laser using the semiconductor substrate which promises smooth and optically excellent cleaved surfaces and is suitable for fabricating semiconductor lasers using nitride III-V compound semiconductors. Using a semiconductor substrate, such as GaN substrate, having a major surface substantially normal to a {0001}-oriented face, e.g. {01-10}-oriented face or {11-20}-oriented face, or offset within ±5° from these faces, nitride III-V compound semiconductor layers are epitaxially grown on the substrate to form a laser structure. To make cavity edges, the GaN substrate is cleaved together with the overlying III-V compound semiconductor layers along high-cleavable {0001}-oriented faces.

Abstract: A semiconductor device having a CMOS structure, wherein, in manufacturing a CMOS circuit, an impurity element which imparts p-type conductivity to the active layer of the p-channel type semiconductor device is added before forming the gate insulating film. Then, by applying thermal oxidation treatment to the active layer, the impurity element is subjected to redistribution, and the concentration of the impurity element in the principal surface of the active layer is minimized. The precise control of threshold voltage is enabled by the impurity element that is present in a trace quantity.

Abstract: A chip scale package has a semiconductor MOSFET die which has a top electrode surface covered with a layer of a photosensitive liquid epoxy which is photolithographically patterned to expose portions of the electrode surface and to act as a passivation layer and as a solder mask. A solderable contact layer is then formed over the passivation layer. The individual die are mounted drain side down in a metal clip or can with the drain electrode disposed coplanar with a flange extending from the can bottom.

Abstract: A differential negative resistance element includes a heavily doped GaAs layer interposed between a collector layer of lightly doped GaAs and an emitter layer of heavily doped AlGaAs, is shared between a base region between the collector layer and the emitter layer, a base contact region and a channel region between the base region and the base contact region, and a depletion layer is developed into the channel region together with the collector voltage so as to exhibit a differential negative resistance characteristics, wherein the channel region is formed through an epitaxial growth and etching so that the manufacturer easily imparts target differential negative resistance characteristics to the channel region.

Abstract: A semiconductor photodetection device includes a photodetection layer formed of an alternate and repetitive stacking of an optical absorption layer accumulating therein a compressive strain and a stress-compensating layer accumulating therein a compensating tensile strain, wherein the optical absorption layer has a thickness larger than a thickness of the stress-compensating layer.

Abstract: A method of manufacturing a semiconductor device which includes forming a first SiGe layer having a low content of Ge, forming an oxide layer by implanting oxygen ions into the first SiGe layer, and then annealing the first SiGe layer. The method also includes forming, on the first SiGe layer, a second SiGe layer which has a higher content of Ge than the first SiGe layer, forming a strained Si layer on the second SiGe layer, and forming a field effect transistor in which the strained Si layer is used a channel region. Further, a field effect transistor may be formed on a semiconductor substrate having an indefectible, high-quality, buried oxide layer and a largely strained Si layer, and hence a high-speed, low-power-consumption semiconductor device can be realized.

Abstract: A heterojunction bipolar transistor is composed of a substrate, a collector layer covering the substrate, a base layer formed on the collector layer, an emitter layer formed on the base layer, and an emitter contacting semiconductor layer formed on the emitter layer. The base layer is doped with a first conductive type dopant. The emitter layer is formed of a mixed crystal of first and second compound semiconductors, and doped with a second conductive type dopant. The emitter contacting semiconductor layer is doped with the second conductive type dopant. The emitter layer includes a superlattice layer connected to the base layer, and a disordered layer connected to the emitter contacting semiconductor layer. The first and second compound semiconductors are layered to form a superlattice in the superlattice layer, and the first and second compound semiconductors are irregularly layered in the disordered layer.

Abstract: In the present invention, disclosed is a semiconductor memory device capable of reducing the number of erasing times of each block allocated to a cluster or the number of blocks to be erased in one writing to the minimum. As an embodiment of the present invention, when a host system 1 performs accessing, for each cluster as a unit, to the FAT partition prepared on a flash memory 17 of the semiconductor memory device 100, a CPU 6 adds an address offset value held by address offset storage section 10 to a logical address specified by the host system 1, whereby a logical address of a head sector of the cluster corresponds to a physical address of a head sector of a unit block for erasing/writing data in the flash memory 17.

Abstract: The invention provides a semiconductor device, manufactured with low manufacturing costs, that prevents the breakdown voltage from lowering.

Abstract: A high performance unary digital loudspeaker system is disclosed; providing cost-effective and efficient performance, and providing the option to integrate multiple speaker elements or other related circuitry, and comprising a semiconductor substrate (102), an electrode (104) disposed upon the substrate, an insulator element (106) disposed upon the electrode forming a frame of material, an electrically conductive membrane (108) disposed upon the insulator element so as to form a chamber (110) between the electrode and the membrane, the membrane having a flexible support section (112) formed therein, and a control circuit (200) coupled (114, 116) to the membrane and the electrode, and adapted to provide a variable potential therebetween.

Abstract: In production of a solid-state image pickup device including a semiconductor substrate, a photoelectric converter element group including a plurality of photoelectric converter elements formed in one column in one surface of the semiconductor substrate, a charge transfer path to transfer signal charge accumulated in the photoelectric converter elements, and readout gates to read signal charge from photoelectric converter elements to feed the charge to the charge transfer path, an ON or ONO film electrically insulates each transfer electrode constituting the charge transfer path from the semiconductor substrate and an oxide insulating film insulates a readout gate electrode constituting the readout gate from the semiconductor substrate to thereby improve electric characteristics of the solid-state image pickup device.

Abstract: An object is to prevent protrusion of a plug from an interlayer insulating film to prevent formation of a step between circuit parts exceeding a step height allowed in a planarization process and also to prevent formation of particles due to a protruded plug. An interlayer insulating film (11) is etched back over the entire surface under an etching condition in which the etching selectivity of a polysilicon plug (13) with respect to the interlayer insulating film (11) is 10, for example, to recess the polysilicon plug (13) to a given depth in a bit line contact hole (12) to form a recessed polysilicon plug (27).

Abstract: A semiconductor memory device includes: a memory cell region having main virtual ground lines ; and a reference cell region having reference virtual ground lines, and the reference cell region having substantially the same interconnection routine as said memory cell region, wherein, in said reference cell region, adjacent reference cells to a selected reference cell to be referred are off-bit cells.

Abstract: A cylindrical storage electrode in a semiconductor device is manufactured by forming a contact hole in a poly oxide film and by forming a first thin film on the film and in the hole. Next, a core oxide film and an anti-reflective coating film are formed on the first thin film to determine the height of the cylinder. A pattern is then formed by etching the anti-reflective coating film, core oxide film and the first thin film such that the poly oxide film is exposed. A second thin film is formed on the overall resultant structure, and a tungsten silicide layer is formed on the second thin film. Inner and outer walls of the cylinder are then formed by blanket-etching the tungsten silicide film and the second thin film such that the core oxide film is exposed. After the core oxide film is removed, a selective metastable polysilicon (SMPS) process is performed so that different grain growths are generated at the inner and outer walls of the cylinder. A storage electrode is then formed by annealing the cylinder.

Abstract: A field-effect semiconductor element implemented with a fewer number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance is set so small that whether or not a trap captures one electron or hole can definitely and distinctively be detected in terms of changes of a current of the semiconductor FET element. By detecting a change in a threshold voltage of the semiconductor element brought about by trapping of electron or hole in the trap, data storage can be realized at a room temperature.

Abstract: In a semiconductor memory device such as a flash memory, a field oxide film is formed to a forward taper shape on a semiconductor substrate, and a floating gate is formed to a reverse (inverted) taper shape between the field oxide film over the semiconductor substrate.