Abstract: A liquid chromatograph mass spectrometer includes a solvent removing tube, a first ion lens and a second ion lens. Voltages applied to the solvent removing tube, and the first and second ion lenses corresponding to each mass number of a standard sample are studied in advance so that efficiencies of passing ions become best. A voltage scanning pattern is made based on the impressed voltages, and stored in a memory portion. When a scanning measurement is carried out, a control portion controls a current voltage source and a high frequency voltage source according to the voltage scanning pattern, synchronizing with the scanning of the impressed voltage to the quadrupole filter. As a result of the control, an objective ion which is generated by being atomized from a nozzle may effectively pass through the entrance of a quadrupole filter.

Abstract: In order to provide a method to easily and surely adjust the focal distance as in a Wobbler apparatus of the transmission type electron microscope method, a crossover 11 of a charged particle beam 2 is established between a charged particle gun 1 and an objective lens 6 and a beam deflection device 4 is provided to deflect the charged particle beam at the crossover point as the supporting point. A total controller 9 calculates an amount of the out of focus from a moving amount of the microscopic image obtained by deflecting the beam and orders the objective lens power supply to move the microscopic image as the focal distance.

Abstract: An on-the-go sensor for determining the sugar content of an agricultural product, such as a sugar beet, during harvesting or at other times. The sensor is coupled to a harvester/defoliator and uses a knife to slice a cross-section from the crown of the sugar beet during harvesting. An illumination chamber radiates the exposed crown, and a sensor head receives the reflected radiation. A spectrometer converts the reflected radiation to a spectral signal. A computer digitizes and processes the spectral signal to produce data points relating to the sugar content of the sugar beet. The processing of the data points includes normalization, linearization, and other techniques. One of the techniques eliminates the conventional need to use the spectral signature of a separate physical standard as a reference.

Abstract: A system for improving the visibility in vehicles, including the following: an illumination optical system (2) for continuous radiation of infrared pulsed light; an associated receiver optical system (3) for receiving reflected components of the radiated light; a display (4) for representing information obtained by the receiver optical system (3), and a device (5, 6) for determining the presence of glare in the receiver optical system (3) from a foreign vehicle illumination optical system and for changing the keying interval or duty cycle of the infrared pulsed light of the illumination optical system (2) driven with fixed keying interval in dependence upon the vehicle direction of travel in such a manner that the glare is eliminated. Therein the illumination optical system is driven is driven with a fixed keying interval depending upon the vehicle direction of travel or, in certain cases, the direction of illumination.

Abstract: An H-drive arrangement for the substrate or mask stages of a lithographic apparatus has an X-beam 11 rigidly mounted to Y-sliders 121a, 121b against X and Y translation and rotation about a Z axis (yaw) so as to form a rigid body in the XY plane. Rotation about X and Y axes is permitted in the joint between at least one Y-slider 121a, 121b and X-beam 11. Crash protection may be provided by a yaw rate sensor and/or resilient buffers which contact Y-beams 12a, 12b in the event of out-of-range yaw motions.

Abstract: The invention relates to so-called scanning tips of probes necessary for scanning a measured object, in particular in scanning force microscopes and other scanning microscopes, so-called scanning probe microscopes. The possible resolution of such microscopes depends primarily on the fineness of the tip, i.e. its curvature or radius being as small as possible. According to the invention, a photostructurable material, e.g. a photosensitive resists, serves as the material for the scanning tip which is exposed via a mask and is subsequently developed/hardened in a manner known per se. The unexposed parts of the photosensitive resist are removed as usual. By the shape of the exposure mask, the preferably directed exposure of the photosensitive resist, and the subsequent hardening, a tip is formed preferably laterally on or at a carrier, usually made from a different material, which is provided with a very small radius, thus very well suitable for scanning probe microscopy and similar applications.

Abstract: An apparatus using charged particle beam is provided with means for detecting positional difference between a target position on a chip pattern within an observation visual field of a microscope after displacing a sample stage thereof and a predetermined position within the visual field, means for storing the detection result and means for determining a new displacement target position for displacement to the predetermined position in subsequent observation while taking into account of the positional difference stored previously and the displacement target position used at the time of storage.

Abstract: An infrared light unit for a motor vehicle includes a light source, a reflector having two focal regions and a lens. The light source is in one of the focal regions and produces a pool of reflected light in the other focal region, and the lens converts this pool of light into a beam projected on the road. The light unit includes, between the reflector and the lens, a filter which is opaque to visible light and transparent to infrared light, and which is movable between a position out of the path of light going from the reflector to the lens, and an active position in which all or most of the light going from the reflector to the lens passes through the filter.

Abstract: The present invention relates to the multifunctional urgent shutoff safety valve for preventing accidents such as gas explosion, fire, etc. in advance. It is installed at the gas supply path. The spool assembly run by earthquake accelerations in case of an earthquake of stronger than a fixed level shuts off the gas circulation path to stop gas supply, or the spool assembly shuts off the gas circulation path to stop gas supply when an excessive amount of gas is flowed out in a short time due to blowing-out of the rear end pipe of the present valve. In the configuration of the multifunctional urgent shutoff safety valve of the present invention, a permanent magnet, which is mounted on the upper end of the spool assembly installed at the valve room in the main body in the vertical state to pen and close the outlet port, is suspended apart from the bottom surface of the pendulum (acceleration sensor) at a fixed interval, when the valve outlet port is open.

Abstract: A rotor 55 having magnets 57 is assembled to rotate freely by bearings 58, 59 with respect to a stator which comprises coils 54 and stator cores 53. A current carrying device is formed from motor brushes 73, and slip rings 75 and commutator pieces 74 of a disk-shaped feeding unit 72, and the current carrying device is arranged on an outer side opposite to a side arranging the magnets 57 on a rotational axis X of the rotor 55 with respect to the bearing 58.

Abstract: A solenoid valve includes a moving part, a plunger of magnetic material having one end facing an end face of the moving part, and a protrusion formed at the one end of the plunger and abutting on the end face of the moving part. During energization, a magnetic path is formed from a valve body to the moving part to produce an attraction force between the valve body and the moving part across a clearance. Magnetic flux running along the magnetic path becomes saturated at the protrusion.

Abstract: A weld gun cylinder and piston assembly includes a common center end wall interposed between two cylinders. The common center end wall functions as a manifold with bores extending therethrough. The manifold houses two spool valves. The spool valves control the passage of pneumatic pressure through passages of the manifold to and from the cylinders to extend and retract two piston rods for controlling jaws and a weld tip on a robotic arm.

Abstract: Metal nitride and metal oxynitride extrusions often form on metal silicides. These extrusions can cause short circuits and degrade processing yields. The present invention discloses a method of selectively removing such extrusions. In one embodiment, a novel wet etch comprising an oxidizing agent and a chelating agent selectively removes the extrusions from a wordline in a memory array. In another embodiment, the wet etch includes a base that adjusts the pH of the etch to selectively remove certain extrusions relative to other substances in the wordline. Accordingly new metal silicide structures can be used to form novel wordlines and other types of integrated circuits.

Abstract: A semiconductor wafer cleaning formulation, including 1-21% wt. fluoride source, 20-55% wt. organic amine(s), 0.5-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 23-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

Abstract: The polymerization initiator-containing solution of the first invention is obtained by mixing a specific perfluorodicarboxylic acid fluoride (A) with CsF in an aprotic polar solvent with stirring to conduct reaction and thereby form a polymerization initiator (B) and then allowing the reaction solution to stand for not less than 72 hours at a temperature of 0 to 30° C. The polymerization initiator-containing solution of the second invention comprises a specific polymerization initiator (B′) and an aprotic polar solvent. The process for preparing a perfluoropolyether according to the invention comprises polymerizing hexafluoropropylene oxide in the presence of the polymerization initiator-containing solution.

Abstract: Compounds of the formula (I) 1

Abstract: The present invention provides novel phenylacetylene compounds, liquid crystal compositions having a large refractive index anisotropy (&Dgr;n), and liquid crystal elements produced with the same.

Abstract: The present invention relates to a method of containing nickel into the alumina aerogel prepared by sol-gel method and supercritical drying and of preparing the nickel-alumina hybrid aerogel catalyst. The nickel-alumina catalyst prepared in the present invention has an excellent reactivity with a prolonged lifetime.

Abstract: A high-melting-point conductive oxide includes a mixture of a powdered Sr compound and Ru compound or Ru metal. The mixture is sintered at a primary temperature of 900° C. to 1300° C. in an atmosphere containing oxygen to form a sintered body that is pulverized back to a powder. The powder is given a desired shape and is again sintered, this time at a secondary temperature of 1000° C. to 1500° C. higher than the primary temperature, again in an atmosphere containing oxygen. The high-melting point conductive oxide is used as a heating element for high-temperature use, an electrode material for high-temperature use, a material for high-temperature thermocouple use and a light-emitting material for high-temperature use.

Abstract: Described are photochromic organic resin compositions and the impact resistant polymerizates and coating compositions made therefrom. The organic resin composition comprises the reaction product of at least one polyol having greater than 1.0 hydroxyl groups; at least one polyisocyanate having greater than 1.0 isocyanato groups; and at least one polyamine curing agent having greater than 1.0 amino groups. The polymerizates are made photochromic either by the addition of organic photochromic compounds to the reactants used to form the polymerizate or by methods that imbibe or transfer the photochromic compounds into the polymerizate. Optically clear photochromic and impact resistant articles such as ophthalmic lenses and articles having photochromic coatings prepared from the photochromic organic resin compositions are also described.

Abstract: A photocurable silver composition is provided which comprises an ultraviolet light curable organic mixture, a photoinitiator, a silver powder, and a silver flake composition. The silver flake composition comprises at least 20% of the weight of the silver powder. The disclosed compositions may be used to produce silver-containing coatings on a variety of different substrates. Related methods are provided.

Abstract: The present invention provides a garage jack provided with a dual cylinder mechanism for rapid traversing in which there is no fear that damage will be caused by an accidental load during rapid traverse and working of a hydraulic circuit is simple.

Abstract: The present invention provides a garage jack having satisfactory operating characteristics, in which an arm provided with a support plate may be rapidly operated in a substantially no-load operation of raising a support plate from its lowest height to a jack point, and in which an output to lift an object may be easily obtained when there is a load operation.

Abstract: A lifting column provided with a powered lifting mechanism (3, 4, 5) which moves a loading bucket (7) along the vertical axis of the column. The column comprises a linear transducer (20, 30) which directly measures the height reached by the loading bucket and continuously transmits the read values to a computer unit (33). The invention further relates to an apparatus comprising a plurality of such columns and a central unit which compares the height of the various bucket and control the power group of the columns in order to maintain the various heights at the same level.

Abstract: A fence post finial and method for molding and assembling the same is disclosed. Unisex molded halves are pressure fitted to create a high-gloss, attractive finial that is capable of withstanding variable weather conditions. Further enhancement of the finial design is realized by the unique mold structure which allows additional finials/skirts to be connected to the base finial.

Abstract: Using an oxide superconductor that does not require cryogenic temperatures, a superconducting tunnel junction device is provided which can accurately control the magnitudes of critical current and step voltage necessary for electronics applications and which has good characteristics as designed. The intrinsic Josephson superconducting tunnel junction device includes an oxide superconductor defined by a general expression (I): Bi2−zPbzSr2Can(1−x)RnxCun+1O2n+6 (n≧1, 0<x≦0.2, 0≦z≦1.0, R: rare-earth element).

Abstract: In the case where a Ta2O5 thin film having double bond Ta═O is employed for a capacitative insulating film, Rapid Thermal Anneal in oxygen and UV/O3 treatment are executed at suitable temperature and in suitable time. Whether or not absorption peak which appears in 2340 cm−1 exists and whether it is large or small are monitored by measuring a transmission infrared absorption spectrum of a Ta2O5 thin film with Fourier Transform Infrared Spectroscopy. In the case where a Ta2O5 thin film, in which an abundance ratio of oxygen in a three coordinate bonding state is large, is employed for a capacitative insulating film, an intensity ratio of each double peak which appears in 510 cm−1 and 570 cm−1 is measured as well, so that the film whose ratio (510/570) is larger than another one is used as an character to improve quality of a film.

Abstract: In a crystallization process of an amorphous semiconductor film, a first polycrystalline semiconductor film, in which amorphous regions are dotted within the continuous crystal region, is obtained by performing heat treatment after introducing a metallic element which promotes crystallization on the amorphous semiconductor film. At this point, the amorphous regions are kept within a predetermined range. A laser beam having a wave length region, which can give more energy to the amorphous region than to the crystal region, is irradiated to the first polycrystalline semiconductor film, it is possible to crystallize the amorphous region without destroying the crystal region. If a TFT is manufactured based on a second polycrystalline semiconductor film, which is obtained through the above-mentioned crystallization processes, the TFT with high electric characteristics and less fluctuation can be obtained.

Abstract: In those thin-film transistors (TFTs) employing as its active layer a silicon film crystallized using a metal element, the objective is to eliminate bad affection of such metal element to the TFT characteristics. To this end, in a TFT having as its active layer a crystalline silicon film that was crystallized using nickel (Ni), those regions corresponding to the source/drain thereof are doped with phosphorus; thereafter, thermal processing is performed. During this process, nickel residing in a channel formation region is “gettered” into previously phosphorus-doped regions. With such an arrangement, it becomes possible to reduce the Ni concentration in certain regions in which lightly-doped impurity regions will be formed later, which in turn enables suppression of affection to TFT characteristics.

Abstract: An imaging device includes a read circuit having a bias circuit for biasing the signal currents output from a sensor array to correct variations of the sensor array. The bias current is determined so that the number of pixel data output from the read circuit which are below or above the threshold is equal to a specified number setting for the number of pixel data. A fixed pattern noise (FPN) correction circuit determines the full scale of the FPN correction current based on the bias current.

Abstract: In a semiconductor memory device in which a ferroelectric capacitor is connected to the gate of a field effect transistor (FET), a gate charge at the threshold voltage (Vti) of the FET is represented as Qti. In a polarization-voltage characteristic exhibited by the ferroelectric capacitor where a voltage applied thereto starts to be increased on the supposition that a polarization of 0 C/cm2 initially exists in the capacitor, a voltage, associated with a polarization value corresponding to Qti, is represented as Vtf. In a read operation, the intersection between the gate charge-gate voltage characteristic of the FET and the polarization-voltage characteristic of the ferroelectric capacitor is the operating point where a worst-case polarization of 0 C/cm2 exists in the capacitor after data has been retained in the capacitor. By applying a voltage Vtf+Vti to the control electrode, the data can be read out correctly until the polarization decreases to reach 0 C/cm2.

Abstract: An array substrate for use in a liquid crystal display device includes a thin film transistor as a switching element, having a gate electrode, a source electrode and a drain electrode, wherein the gate electrode is a portion of a gate line near the crossing of the gate and data lines, and has an inverted “T”-shaped opening or a rectangularly-shaped opening. The drain electrode is shaped like the inverted “T”-shape and corresponds to the opening of the gate electrode. The source electrode surrounds the drain electrode along the steps of the semiconductor layer. Accordingly, in the thin film transistor having this structure, the gate electrode is only overlapped by the edges of the drain electrode. And thus, the gate-drain parasitic capacitance is reduced and minimized. Also, variations in the gate-drain parasitic capacitance are prevented. As a result, a high resolution is achieved and the picture quality is improved in the liquid crystal display device.

Abstract: A silicon semiconductor die comprises a heavily doped silicon substrate and an upper layer comprising doped silicon of a first conduction type disposed on the substrate. The upper layer comprises a well region of a second, opposite conduction type adjacent an edge termination zone that comprises a layer of a material having a higher critical electric field than silicon. Both the well region and adjacent edge termination zone are disposed at an upper surface of the upper layer, and an oxide layer overlies the upper layer and the edge termination zone. A process for forming a silicon die having improved edge termination. The process comprises forming an upper layer comprising doped silicon of a first conduction type on a heavily doped silicon substrate, and forming an edge termination zone that comprises a layer of a material having a higher critical electric field than silicon at an upper surface of the upper layer.

Abstract: A light irradiating device (68) having the good radiation characteristic comprises a plurality of conductive paths (51) that are electrically separated, a photo semiconductor chips (65) fixed onto desired conductive path (51), and a resin (67) for covering the photo semiconductor chips (65) to support the conductive paths (51) integrally.

Abstract: A LED device which has an excellent color rendering property and no toxicity and does not bring about an increase in production cost more than necessary, and a covering member used for such a LED device can be provided.

Abstract: The invention relates to a substrate comprising a glass sheet (1) having a thickness which is smaller than or equal to 0.1 mm, the glass sheet (1) being provided with a layer of a synthetic resin material (2) having a thickness which is smaller than or equal to that of the glass sheet (1). This substrate proves to be flexible. In addition, the substrate cracks less easily, so that it can be processed more readily. The substrate may be used, for example, in light-emitting devices, such as a poly-LED or PALC.

Abstract: There is provided a light emitting device which is bright and has low electric power consumption and high reliability. A triplet EL element 203 electrically connected to a current controlling TFT 102 is provided in a pixel portion 201. A luminescent material used for the triplet EL element 203 has a feature that EL is obtained by triplet excitation, and exhibits high luminous efficiency at a low operation voltage as compared with the prior art. Accordingly, the operation is made at the low operation voltage, so that the light emitting device which is bright and has low electric power consumption and high reliability can be obtained.

Abstract: A lightly doped n-type semiconductor layer is epitaxially grown on a heavily doped n-type semiconductor substrate, and a heavily doped n-type impurity region, a lightly doped p-type deep guard ring and a heavily doped p-type shallow impurity region are formed in said lightly doped semiconductor layer in such a manner that a diode has a major p-n junction between the heavily doped n-type impurity region and the heavily doped p-type shallow impurity region and other p-n junction between the lightly doped n-type semiconductor layer and the lightly doped p-type guard ring, wherein the other p-n junction is wider in area than the major p-n junction so that the breakdown voltage is adjustable without increase of parasitic capacitance dominated by the other p-n junction.

Abstract: A semiconductor body (11) has first and second opposed major surfaces (11a and 11b). First and second main regions (13 and 14) meet the second major surface (11b) and a voltage-sustaining zone is provided between the first and second regions (13 and 14). The voltage-sustaining zone has a semiconductor region (11) of one conductivity type forming a rectifying junction (J) with a region (15) of the device such that, when the rectifying junction is reverse-biased in one mode of operation, a depletion region extends in the semiconductor region of the voltage-sustaining zone. A number of conductive regions (22) are isolated from and extend through the semiconductor region (11) in a direction transverse to the first and second major surfaces (11a and 11b) so as to be spaced apart in a direction between first and second main regions.

Abstract: A group III nitride compound semiconductor device has a substrate, a group III nitride compound semiconductor layer having a device function, and an undercoat layer formed between the substrate and the group III nitride semiconductor layer. The undercoat layer has a surface which has a texture structure, or which is trapezoid shaped in section or which is pit shaped. In addition, a reflection layer made of nitride of at least one metal selected from the group consisting of titanium, zirconium, hafnium and tantalum may be formed on a surface of the undercoat layer. Also the surface of the reflection layer is formed as a texture structure, a trapezoid shape in section or a pit shape.

Abstract: One page buffer is connected to one bit line. The page buffer latches program data for a selected memory cell. A plurality of page buffers are connected to a sense amplifier in a read/write circuit through a column gate. In a verify read, read data of a selected column is detected using a sense amplifier used in a normal data read. The read data detected by the sense amplifier, i.e., the verify read result is transferred to the page buffer of the selected column. The value of program data in the page buffer is changed on the basis of the verify read result.

Abstract: The semiconductor memory of this invention includes an MFMIS transistor including a field effect transistor and a ferroelectric capacitor formed above the field effect transistor. The semiconductor memory has a characteristic that a value of (&sgr;−p) is substantially not changed with time in a relational expression, V=(d/&egr;0)×(&sgr;−p), which holds among a potential difference V between an upper electrode and a lower electrode, a surface density of charge &sgr; of a ferroelectric film, polarization charge p of the ferroelectric film, a thickness d of the ferroelectric film and a dielectric constant &egr;0 of vacuum when a data is written in the MFMIS transistor and the ferroelectric film is in a polarized state.

Abstract: A low power consuming circuit is provided which is capable of reducing power consumption by using a Vt (threshold voltage) characteristic of a MIS (Metal Insulator Semiconductor) transistor for generating a source voltage.

Abstract: A semiconductor memory device is constructed to include a memory cell formed by a plurality of transistors, wherein each of gate wiring layers of all of the transistors forming the memory cell is arranged to extend in one direction.

Abstract: A semiconductor apparatus and method for making the semiconductor apparatus are provided. The semiconductor memory device can include functional circuit blocks (100) having a multi-layer wiring structure for providing electrical connections between device elements within functional circuit blocks (100). Multi-layer wiring structure can include a wiring layer (M2) disposed in a M2 wiring layer horizontal track (120) and a M2 wiring layer vertical track (122). M2 wiring layer horizontal track (120) provides electrical connections by using wiring layer (M2) disposed in a horizontal direction and M2 wiring layer vertical track (122) provides electrical connections by using wiring layer (M2) disposed in a vertical direction. A wiring layer (M1) can form electrodes having electrical connections to diffusion regions of the device elements in functional circuit blocks (100). Wiring layer (M1) can have a higher sheet resistance and higher melting point than wiring layer (M2).

Abstract: A retrograde well structure for a CMOS imager that improves the quantum efficiency and signal-to-noise ratio of the imager. The retrograde well comprises a doped region with a vertically graded dopant concentration that is lowest at the substrate surface, and highest at the bottom of the well. A single retrograde well may have a single pixel sensor cell, multiple pixel sensor cells, or even an entire array of pixel sensor cells formed therein. The highly concentrated region at the bottom of the retrograde well repels signal carriers from the photosensor so that they are not lost to the substrate, and prevents noise carriers from the substrate from diffusing up into the photosensor. Also disclosed are methods for forming the retrograde well.

Abstract: The object of the invention is to improve a characteristic under a reverse bias. A P base layer (6) is provided as a plurality of band-shaped portions parallel with each other. A P+ base layer to be a downward protrusion having a high impurity concentration is not formed in a bottom portion of the P base layer (6). The P base layer (6) is formed more shallowly than an N layer (17), and furthermore, the band-shaped portions forming the P base layer (6) are coupled to each other at ends thereof. Moreover, an N source layer (5) is ladder-shaped and is connected to a source electrode (16) through only a crosspiece portion thereof.

Abstract: A capacitor formed by a process using only two deposition steps and a dielectric formed by oxidizing a metal layer in an electrolytic solution. The capacitor has first and second conductive plates and a dielectric is formed from the first conductive plate.

Abstract: A DRAM memory cell array includes a wiring layer formed at a storage-capacitor level of the cell for establishing a flipped connection of complementary bit lines, or for connecting support circuits in a DRAM cell array. The wiring layer includes at least one and preferably two capacitor electrodes for making both types of interconnects. A method for making the DRAM memory cell includes forming one or more capacitor electrodes at the same time the electrodes of the storage capacitor of the memory cell are formed, and from the same material as the storage capacitor electrodes.

Abstract: Bit lines BL of the DRAM that are narrowed to 0.1 &mgr;m or less are made of two-layered conductive films, in which a W (tungsten) film is deposited on a WN (tungsten nitride) film. For bit lines BL, fewer W atoms diffuse across the interface between the W film and the WN film, within crystal grains, and at grain boundaries of the W film, and no tensile stress exists in the W film. Therefore, high-temperature thermal processing in the capacitor formation process does not cause wiring breaks even when the width of bit lines BL is narrowed to 0.1 &mgr;m or less.