Abstract: A negative electrode material for a non-aqueous electrolyte secondary battery of the present invention is a negative electrode material for a non-aqueous electrolyte secondary battery capable of reversibly absorbing and desorbing lithium, and it includes a solid phase A and a solid phase B that have different compositions and has a structure in which the surface around the solid phase A is entirely or partly covered by the solid phase B. The solid phase A contains at least one element selected from the group consisting of silicon, tin and zinc, and the solid phase B contains the above-described at least one element contained in the solid phase A, and at least one element selected from the group consisting of Group IIA elements, transition elements, Group IIB elements, Group IIIB elements and Group IVB elements. The atomic arrangement and structure (e.g.

Abstract: A negative electrode for a lithium secondary battery obtained by sintering an active material layer on a current collector under a non-oxidizing atmosphere after the active material layer including primary particles of an active material containing silicon and/or a silicon alloy and a binder is formed on an electrically conductive metal foil as a current collector. A mean diameter of primary particles of the active material is less than 1 &mgr;m, the primary particles are dispersed uniformly in the active material layer, and the primary particles and the binder are uniformly mixed and distributed.

Abstract: A carbonaceous material manufacturing apparatus includes a reaction tube and a gas supply portion. An anode and a cathode defining an arc discharge portion is place in the reaction tube, and a capturer is located provided as well to capture carbonaceous materials generated. At the location of the capturer, an RF heater is disposed around the reaction tube. In a carbonaceous material manufacturing method, carbonaceous materials generated in the arc discharge portion are transported from a gas supply portion into the reaction tube by the gas supplied into the reaction tube, then heated by a RF heater in the capturer where the carbonaceous materials are not exposed to the atmospheric air, to thereby promote removal of impurities and growth of single-walled carbon nanotubes.

Abstract: A nonaqueous electrolyte secondary battery includes a positive electrode, a negative electrode comprising a graphite as a negative electrode active material, and a nonaqueous electrolyte including at least a saturated cyclic carbonic ester and containing a cyclic carbonic ester having a carbon-carbon double bond such that, when a content of the cyclic carbonic ester having a carbon-carbon double bond is x (g), a content of the graphite in the negative electrode is B (g), a specific surface area of the graphite is A (m2/g), a size of the crystallite of the graphite in a direction of the c axis is Lc, and a size of the crystallite of the graphite in a direction of the a axis is La, a condition expressed by

Abstract: A safe and economical electrochemically active material useful in rechargeable battery cell electrode compositions comprises a nanostructure amalgam of a transition metal fluoride and carbon. The nanoamalgam may be prepared by subjecting a precursor mixture of a transition metal fluoride, such as FeF3, and carbon to extreme, high energy impact comminution milling which results in the conversion of the mixture to a unique and distinct nanostructure material. When incorporated as active electrode material in lithium battery cell fabrications, the nanoamalgam enables the attainment of stable specific discharge capacities in the range of 250 to 500 mAh/g.

Abstract: In a non-aqueous electrolyte secondary battery provided with a positive electrode, a negative electrode using carbon material as negative electrode active material, and a non-aqueous electrolyte solution, the non-aqueous electrolyte solution contains at least a saturated cyclic carbonic ester and a cyclic carbonic ester having C═C double bond where an amount of the cyclic carbonic ester having C═C double bond is in a range of 1.0×10−8 to 13.0×10−5 g per negative electrode capacity of 1 mAh.

Abstract: A lithium cell has a positive electrode, a negative electrode having lithium, a separator interposed between the positive electrode and the negative electrode, and a non-aqueous electrolytic solution containing a solute and a non-aqueous solvent. The non-aqueous solvent has a main component of one or more than one compound represented by the following general formula (1): X—(O—C2H4)n-O—Y (where X and Y are independently a methyl group or an ethyl group, and n is 2 or 3). The main component is 90 to 100% in volume of the non-aqueous solvent. The separator has a melting point of higher than 150° C. The lithium cell with the above construction does not impair heat resistant safety and electrochemical characteristics such as discharging characteristics even in severe environments of high temperature, and enhances its long period reliability.

Abstract: Processes for producing a holographic material involve producing the holographic image on a polished, substantially smooth surface and then transferring the holographic image to a substrate. A metallic coating is applied to a smooth surface of a printing element to provide a coated surface, the coated surface is embossed to provide the holographic image, and the holographic image is transferred to a substrate via a bonding material, thereby producing the holographic material. The holographic material may be used to provide a decorative cover for an object or item, such as a floral grouping or a potted plant.

Abstract: A method is disclosed for the implementation of phase shifting masks for EUV lithography. The method involves directly etching material away from the multilayer coating of the mask, to cause a refractive phase shift in the mask. By etching into the multilayer (for example, by reactive ion etching), rather than depositing extra material on the top of the multilayer, there will be minimal absorption loss associated with the phase shift.

Abstract: A method for fabricating an EUV phase shift mask is provided that includes a substrate upon which is deposited a thin film multilayer coating that has a complex-valued reflectance. An absorber layer or a buffer layer is attached onto the thin film multilayer, and the thickness of the thin film multilayer coating is altered to introduce a direct modulation in the complex-valued reflectance to produce phase shifting features.

Abstract: Computer-based design and verification tools provide integrated circuit layouts for use in chromeless phase lithography. A phase-mask design tool assigns feature size descriptors to circuit layout features, and mask features are configured using the feature size descriptors. Feature size descriptors can be assigned based on feature size ranges established based on a mask error function, feature dimensions with respect to a lithographic system resolution limit, or selected properties of aerial image intensity as a function of feature size. Circuit layout features are assigned mask features that include twin phase steps. In addition, circuit layout features associated with selected feature descriptors are assigned sub-resolution assist mask pattern portions or other mask pattern portions based on optical and process corrections.

Abstract: A wafer (18) is made using a mask (14) that has a quartz substrate (15) and a patterned stack (32) for providing a mask pattern. The patterned stack comprises an opaque layer (36) between two ARC layers (34, 38). The patterned stack reduces flare, which in turn improves critical dimension (CD) control. The stack reduces the reflections that come from the interface between the opaque layer (36) and quartz substrate (15). This stack also absorbs the reflections that come back from the direction of the wafer. The opaque layer (36) is silicon, which is opaque at wavelengths below 300 nanometers, and the ARC layers are non-stoichiometric silicon nitride.

Abstract: A photomask and a method for making the same in which an opaque feature (38) is formed on a transparent substrate (32) and a depression (44) is etched in the transparent substrate (32) adjacent to the opaque feature (38). The depression (44) is etched to a depth such that a phase difference between light passing through the substrate (32) outside the depression (44) and light passing through the depression is 180°. In one embodiment, the depression (44) is formed in the substrate directly adjacent to an edge of the opaque feature (38). In another embodiment, the depression (58) surrounds a mesa structure (59) formed in the substrate (50), and the opaque feature (62) resides on the mesa structure (59). The depression (58) may be laterally spaced from an edge of the opaque feature (62).

Abstract: We are able to significantly reduce variations in critical dimension from target for features in a patterned photoresist, where the patterned photoresist is generated during the fabrication of a reticle (photomask) to be used in semiconductor processing. The ability to maintain the targeted critical dimension of patterned photoresist features which were imaged using a direct write process depends upon the use of a photoresist binder resin system which provides a sufficiently dense structure to sterically hinder the movement of photoacid-labile groups after irradiation of such groups (writing of the pattern). As importantly, the photoacid groups which are used to generate the pattern need to be such that they are activated only at temperatures above about 70° C., and preferably at temperatures in the range of 110° C. to 150° C. Further improvement in uniformity of developed photoresist feature size across the reticle surface is achieved by controlling a combination of variables during development.

Abstract: The present invention relates to a substrate in particular of EUV microlithography, to the production of a substrate of this type and to the use of this substrate as a substrate for mirrors and/or masks or mask blanks in particular in EUV microlithography.

Abstract: This patent relates to an imaging member comprising a vacuous polymer base having adhered thereto an image formed on a transparent polymer sheet, wherein said vacuous polymer base has a density of less than 0.7 grams/cc and a modulus to density ratio of between 1500 and 4000 and wherein said image is in contact with said vacuous polymer base.

Abstract: The present invention relates to an optical memory device and an operating process thereof. The optical memory device have a recording layer containing a photochromic compound and an electron-accepting compound which is a Lewis acid compound having a Lewis acid part and a long chain part having carbon atoms of C12 or more. One aspect of the operating process has a recording step which recording is performed on the optical memory device by irradiating visible light corresponding to the absorption band of the colored photochromic compound for recording using decolorizing, before and after recording, heating treatments are performed to control the decolorizing sensitivity of the photochromic compound, and an erasing step which ultraviolet light is irradiated to the area including the recorded portion in order to uniformly color the recording layer again.

Abstract: According to the invention, the precision of register in dual exposure can be measured by measuring the length of the periphery of a register mark exposed twice when a positive resist is used and by measuring the length of the outer part of the register mark exposed once when a negative resist is used.

Abstract: A method of determining overlay layers utilizing advanced lithographic materials utilizes a post-etch overlay metrology. After etching, a relatively opaque layer is removed so that registration markers such as trench isolation structures can be observed. Lithographic parameters associated with the process can be adjusted in accordance with the observations. In a preferred embodiment, an overlay error is determined and adjustments are made to the reduce the overlay error.

Abstract: The present invention provides systems and methods that facilitate performing fabrication process. Critical parameters are valued collectively as a quality matrix, which weights respective parameters according to their importance to one or more design goals. The critical parameters are weighted by coefficients according to information such as, product design, simulation, test results, yield data, electrical data and the like. The invention then can develop a quality index which is a composite “score” of the current fabrication process. A control system can then do comparisons of the quality index with design specifications in order to determine if the current fabrication process is acceptable. If the process is unacceptable, test parameters can be modified for ongoing processes and the process can be re-worked and re-performed for completed processes. As such, respective layers of a device can be customized for different specifications and quality index depending on product designs and yields.

Abstract: A process for adjusting the energy of an imaging laser for element and thermally imageable elements suitable for this purpose are described.

Abstract: A photoconductive imaging member comprised of a supporting substrate, and thereover a single layer comprised of a mixture of a photogenerator component, a charge transport component, an electron transport component, and a polymer binder, and wherein the photogenerating component is a pigment.

Abstract: An improved organophotoreceptor comprises an electrically conductive substrate and a photoconductive element on the electrically conductive substrate wherein the photoconductive element has

Abstract: The present invention relates to a photoconductive organic pigment comprising granular cores and an organic pigment having photoconductive properties which organic pigment adheres to the surfaces of the granular cores, a photoconductive organic pigment dispersion liquid comprising the photoconductive organic pigment, and an electrophotographic photoreceptor comprising an electroconductive substrate laminated with a photosensitive layer containing the photoconductive organic pigment and an electrophotographic device using the electrophotographic photoreceptor.

Abstract: According to the present invention, there is provided: an electrophotographic photosensitive member having a photosensitive layer on a support in which a surface layer of the electrophotographic photosensitive member comprises an acrylic polymer having a polyfluoroolefin unit and an alkylene oxide unit, and having a number-average molecular weight in a range of 2,000 to 20,000; a process cartridge and an electrophotographic apparatus both comprising the electrophotographic photosensitive member.

Abstract: An electrophotosensitive material comprising a supporting substrate, an intermediate layer containing a thermosetting resin formed on the supporting substrate, and a photosensitive layer formed on the intermediate layer, wherein a contact angle of the surface of the intermediate layer is not less than a value (A°) represented by the formula: A°=B°−2° in which B° is a contact angle corresponding to an intersection of a first approximation linear line and a second approximate linear line minus 2° in a correlation curve between a residual potential of the photosensitive material comprising the predetermined photosensitive layer formed on the intermediate layer containing the thermosetting resin and a contact angle of the intermediate layer containing the thermosetting resin. According to this photosensitive material, it is possible to obtain a good image, which has a low residual potential and is free from fog.

Abstract: An imaging member having a substrate, a charge transport layer having charge transport materials dispersed therein, and an overcoat layer comprising trisamino triphenyl compound.

Abstract: A single layered electrophotographic photoreceptor has a photoreceptor layer comprising polyester resin as a binder resin having biphenyl fluorene units in the main chain, and specific phenolic compounds as antioxidants. The electrophotographic photoreceptor according to the present invention enables obtaining a better image by suppressing a decrease in dark decay and charged electric potential due to repeated use and has an extended electrical lifetime.

Abstract: A toner comprised of resin, colorant and calcium stearate.

Abstract: A toner has a surface to which a titanium black fine particle adheres, the titanium fine particle having a property of being changed in color from black to white by flash-light.

Abstract: A process comprising heating a resin latex and a colorant below about the glass transition temperature (Tg) of the resin; adding a metal stearate; and isolating the product; and wherein the heating generates an alkyl carboxylate metal salt component ionically attached to the surface of the product.

Abstract: A diazonium salt represented by the following general formula (1) and a thermal recording material using the diazonium salt: 1

Abstract: The present invention includes an imageable element, which can be: (a) an imageable element comprising an imaging layer which comprises: an aromatic diazonium salt containing compound having an alkoxy substituent and an aromatic diazonium salt containing compound free of an alkoxy substituent; a polyvinyl acetal binder; and a sheet substrate; or (b) an imageable element comprising an imaging layer which comprises: an aromatic diazonium salt containing compound having an alkoxy substituent and an aromatic diazonium salt containing compound free of an alkoxy substituent; and a sheet substrate. The imaging layer includes a total aromatic diazonium salt containing compound content of at least 10 weight percent. The molar ratio of the aromatic diazonium salt containing compound having an alkoxy substituent to the aromatic diazonium salt containing compound that is free of an alkoxy substituent is from about 1.0:1 to 70:1. Upon imagewise exposure and development, an imaged element is obtained.

Abstract: An imaging member comprising a polymer sheet, a primer layer contacting said polymer sheet, and an image receiving layer contacting said primer layer; wherein said primer layer comprises: a) polyethyleneimine; and b) latex; wherein the latex has a Tg lower than 25° C. and c) hydrophilic colloid material.

Abstract: Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation and/or possibly other radiation and are developable to form resist structures of improved development characteristics and improved etch resistance are enabled by the use of resist compositions containing imaging polymer component comprising an acid-sensitive polymer having a monomeric unit with a pendant group containing a remote acid labile moiety.

Abstract: A resist pattern having a film thickness of 1 to 100 &mgr;m and an aspect ratio (ratio of the line width to the film thickness of the resist pattern) of 3.5 or higher is provided in accordance with the present invention, the resist pattern being useful for increasing the density of a semiconductor package substrate circuit, and use of the resist pattern enabling a low conductor resistance to be maintained in fine wiring.

Abstract: A dry film photoresist includes a functional polymer. The functional polymer has &agr;,&bgr;-unsaturated groups and groups that generate a free radical upon exposure to actinic radiation.

Abstract: A polymer having &agr;,&bgr; unsaturated groups and a group that generates a free radical when exposed to actinic radiation. The polymer may be self-cross-linking.

Abstract: A heat-sensitive composition which forms an image without the removal of material, which does not require any developing treatment after the stage of exposure to heat and comprises: (a) a switchable polymer, (b) an IR absorber, (c) a triazine compound, and (d) a novolak resin.

Abstract: An infrared sensitive composition and a lithographic printing plate precursor having a large difference in alkali solubility between the exposed portions and unexposed portions (dissolution discrimination), an excellent latitude in development, and a high sensitivity can be provided when the composition is used for the image-forming layer of a lithographic printing plate precursor, which is an infrared sensitive composition comprising an alkali-soluble resin having a phenolic hydroxyl group (A), a light-heat converting substance (B) and a leucohydroxy dye (C).

Abstract: A photoresist which contains a hydrophilic compound that generates a free-radical polymerization initiator upon exposure to actinic radition. The hydrophilic compound may be employed as a binder polymer or cross-linking agent in a photoresist.

Abstract: A data storage medium includes a substrate, a reflective metal layer, and a haze-prevention layer between the substrate and the reflective metal layer. The substrate includes an amorphous thermoplastic resin having a heat distortion temperature of at least about 140° C., a density less than 1.7 grams per milliliter, and an organic volatiles content less than 1,000 parts per million measured according to ASTM D4526. The haze-prevention layer includes a material having a volume resistivity of at least 1×10−4 ohm-centimeters and a tensile modulus of at least about 3×105 pounds per square inch. The data storage medium resists hazing of the reflective layer at elevated temperatures.

Abstract: A compound constructed by N (N is an integer of 2 or more) kinds of phases containing at least one kind of elements selected from a group consisting of Co, Ti, V, Cr, Mn, Fe, Ni, Si, Pb, Bi and Al. At least one kind to (N−1) kinds among the N kinds of phases are continuous phases, and the other phases are discontinuous phases.

Abstract: A presensitized plate which comprises an aluminum support having a grain shape in a structure in which grained structures having specified average wavelength (average aperture diameters) are superimposed, a hydrophilic layer whose thermal conductivity falls within a predetermined range and which is formed on the aluminum support, and an image recording layer of thermal positive type formed on the hydrophilic layer, exhibits a high sensitivity, has a long press life when processed into a lithographic printing plate, and is resistant to scum in the non-image area.

Abstract: The present invention provides an infrared photosensitive composition including a binder polymer (A), a polymerizable compound (B), an infrared absorber (C), and a compound (D) which can generate radicals by the action of light or heat, wherein an acid value of a film produced from the composition is from 0.15 mmol/g to 0.8 mmol/g. The invention also provides a planographic printing plate precursor including a substrate having disposed thereon a recording layer that contains the infrared photosensitive composition.

Abstract: The invention provides a stereolithographic resin composition including a photo-curable component, a resin having a function of causing a reversible, quick sol-gel phase transition based on temperature change, and a filler, and a stereolithographic method using the resin composition.

Abstract: A method of making a printing plate from a heat-sensitive PS plate of a positive-working mode for lithographic printing includes the steps of exposing the heat-sensitive PS plate to light and developing the PS plate using an alkaline developing solution containing at least one compound selected from the group consisting of cationic surfactants and compounds having three or more of an ethylene oxide-terminal group in the molecule thereof. The PS plate has a substrate and an image forming layer formed thereon, said image forming layer comprising a lower layer which is formed on the substrate and contains a water-insoluble and alkali-soluble resin and an upper heat-sensitive layer which is overlaid on the lower layer and contains a water-insoluble and alkali-soluble resin and an infrared absorption dye and exhibits an elevated solubility with respect to alkaline aqueous solutions when heated.

Abstract: In order to suppress or prevent the occurrence of foreign matter in the manufacture of a semiconductor integrated circuit device by the use of a photo mask constituted in such a manner that a resist film is made to function as a light screening film, inspection or exposure treatment is carried out, when the photo mask 1PA1 has been mounted on a predetermined apparatus such as, e.g., an inspection equipment or aligner, in the state in which a mounting portion 2 of the predetermined apparatus is contacted with that region of a major surface of a mask substrate 1a of the photo mask 1PA1 in which a light shielding pattern 1b and a mask pattern 1mr, each formed of a resist film, on the major surface of the mask substrate 1a do not exist.

Abstract: A method is provided for reducing Critical Dimension (CD) non-uniformity in creating a patterned layer of semiconductor material. Two masking layers are respectively created, the first masking layer comprising a main pattern, an isolated pattern and a dummy pattern, the second masking layer exposing the dummy pattern. Methods of compensating for optical proximity effects and micro-loading, as provided by the invention, are applied in creating the first masking layer. The patterned first masking layer is transposed to an underlying layer creating a first pattern therein. The second masking layer removes the dummy features from the transposed first pattern, creating a second pattern therein comprising a main pattern and an isolated pattern to which compensation for optical proximity effects and micro-loading have been applied. The second pattern serves for additional etching of underlying semiconductor material.

Abstract: Disclosed herein is a method for inductor An Improved Structure For the Endpiece of Tape Rule of the high frequency integrated passive devices in which a spiral inductor pattern is formed on an insulation substrate, the spiral inductor pattern is spirally coiled outwards from the center. A thick film dielectric layer made of bisbenzocyclobutene (BCB) is formed on the spiral inductor pattern. A metal layer can be formed according to under bump metallization technique (UBM). The metal layer is either formed into a continuous spirally coiled form or a spread discrete configuration. With this structure, laser trimming can be applied to the metal layer pattern so as to acquire an ideal inductance value, thereby achieving wafer level trimming and compensating the process tolerance.