Abstract: In an infrared detector array according to the present invention, on a thin film with a periphery portion supported by a frame, three or more infrared detecting pixels are arranged in an array pattern so that the hot junctions of thermocouples are arranged above a concave portion and the cold junctions thereof are arranged above the frame. Compensation means is provided which compensates for a difference between the detection sensitivity of the infrared detecting pixel arranged in a peripheral end portion and the detection sensitivity of the infrared detecting pixel arranged in an intermediate portion based on a correlation between electromotive force extracted when the infrared detecting pixel is illuminated with infrared radiation and its position. Owing to this configuration, a plurality of infrared detecting pixels can be integrated and the sensitivity thereof can be made sufficiently high and uniform.

Abstract: A passive infrared sensor uses two detectors having elements of different configurations such that each element outputs a respective frequency when an object moves in front of it. Based on the presence of two frequencies with similar peak and/or slope characteristics, a motion signal is output to, e.g., activate an alarm. In another embodiment the detectors have plural elements with the elements of one detector being wired in a dimension that is orthogonal to the dimension in which the elements of the other detector are wired. The signals from the detectors are combined to determine motion and size of object. The detector elements can also be configured differently from each other as in the first embodiment, and the polarities of signals can be used to determine direction of motion. In yet another embodiment the detectors can be of the same size but have optics of different focal lengths.

Abstract: A high density of electrical interconnection together with well controlled electrical transmission characteristics, low emissivity from the cable and low susceptibility to external electromagnetic interference are obtained in a PET machine with an interconnection harness formed of a ribbon cable with an inner and outer shield. The inner shield together with alternate conductors of the ribbon cable provide a signal return and the outer shield provides an earth ground reducing the susceptibility of the conductors to external electrical noise and reducing emissions from the cable.

Abstract: A deflector which makes multilayered wiring possible and prevents contamination during the manufacture includes an electrode substrate (400) having a plurality of through holes, and an electrode pair made up of first and second electrodes which oppose the side walls of each through hole in order to control the locus of a charged particle beam passing through the through hole, and a wiring substrate (500) having connection wiring pads connected to the electrode pairs of the electrode substrate to individually apply voltages to the electrode pairs. This deflector is formed by bonding the electrode substrate and wiring substrate via the connection wiring pads of the wiring substrate.

Abstract: The invention relates to a device for capturing ionizing radiation, in which a substrate which is provided with a phosphor layer is accommodated in a housing. To simplify the device and to ensure a high light yield, the invention provides that a means for buffering the atmospheric humidity is accommodated in the housing.

Abstract: A photo-stimulable phosphor imaging plate having a non-toxic radio-opaque symbol, pattern or indicia formed on one surface, the so called rear surface, which would become visually apparent in an image if the imaging plate was exposed from the wrong side, thereby eliminating confusion that the image is from the opposing side of the face, and a light-opaque, color contrasting, asymmetric symbol or indicia on the front surface eliminating the confusion of a flipped image, and a correspondingly back to back located color contrasting identical asymmetric symbol on the opposite rear surface of the plate, emulating the raised orientation dot of standard intraoral films.

Abstract: A radiation image forming unit has a stimulable phosphor sheet and a case. The stimulable phosphor sheet includes a phosphor layer and a frame covering the four sides of the phosphor layer. The frame has a recess, and a lead sheet for blocking backward scattered rays is replaceably mounted in the recess by a double-sided tape. The radiation image forming unit may be used without the lead sheet. The lead sheet may be replaced with another lead sheet having a different thickness.

Abstract: A cold cathode field emission device comprises; a cathode electrode 11 formed on a supporting member 10, an insulating layer 12 formed on the supporting member 10 and the cathode electrode 11, a gate electrode 13 formed on the insulating layer 12, an opening portion 14A, 14B formed through the gate electrode 13 and the insulating layer 12, and an electron emitting portion 15 formed on the portion of the cathode electrode 11 positioned in the bottom portion of the opening portion 14B, and said electron emitting portion 15 comprises a matrix, 21 and carbon nanotube structures 20 embedded in the matrix 21 in a state where the top portion of each carbon nanotube structure is projected.

Abstract: A cassette that is detected as being in an abnormally loaded state by a cassette loader is fed through a first processor, a second processor, a third processor, and a fourth processor to a fifth processor, and then discharged into a cassette storage unit. Similarly, a cassette which is detected as failing to eject a stimulable phosphor panel by the second processor is also discharged into the cassette storage unit. A cassette in a normal state ejects a stimulable phosphor panel in the second processor, and the ejected stimulable phosphor panel is processed in a main unit. The processed stimulable phosphor panel is stored back into the cassette, which is then unloaded into a cassette unloader.

Abstract: Information carried on a stimulable phosphor sheet can accurately be read therefrom without dust particles being present on the surfaces of the stimulable phosphor sheet. A dust of a first cleaning unit has a first opening for introducing the stimulable phosphor sheet into the duct and a second opening for discharging the stimulable phosphor sheet out of the duct. The duct has an upper housing member which accommodates therein a first brush roller and a third brush roller that extend parallel to each other and a lower housing member which accommodates therein a second brush roller and a fourth brush roller that extend parallel to each other. The upper housing member also houses therein a first dust removing plate having tip ends held against bristles of the first brush roller and the third brush roller, and the lower housing member also houses therein a second dust removing plate having tip ends held against bristles of the second brush roller and the fourth brush roller.

Abstract: An automatic flush actuation apparatus, which is incorporated with a flushing system having a water inlet, a water outlet, and a water chamber communicating therebetween, that includes a valve member being moved by a flush lever for releasing the water pressure within the water chamber to allow the water passing from the water inlet to the water outlet, and a sensor-operated powering assembly including a relief valve provided at the valve member for controlling the water flowing to the water outlet and an actuator arranged in such a manner that while sensing a presence of a user of the flushing system, the actuator is driven to move the relief valve to an opened position for releasing the water pressure within the water chamber to allow the water passing to said water outlet.

Abstract: A faucet includes a valve tube journalled with in a faucet body, and a discharge spout connected fixedly to an open end of the tube. A discharge end of the spout can be pushed upwardly to turn the spout from a discharging position, where an opening in the tube comes into alignment with a water inlet in the faucet body so that a maximum amount of water can flow downwardly from the discharge end, to a non-discharging position, where the opening is not fluidly communicated with the water inlet so as to stop flow of water from the discharge end. Because there is still water flowing from the discharge end when the spout is rotated from the discharging position to the non-discharging position, contamination of the user's hands due to contact with the discharge end after washing can be prevented.

Abstract: Antifreeze agent containing alkylene glycol, chlorine containing inorganic chloride, sweeteners like sorbitol, provides prominent antifreezing point depression effects by use of small volume.

Abstract: Functionalized hydrophobic aerogel/solid support structure composites have been developed to remove metals and organic compounds from aqueous and vapor media. The targeted metals and organics are removed by passing the aqueous or vapor phase through the composite which can be in molded, granular, or powder form. The composites adsorb the metals and the organics leaving a purified aqueous or vapor stream. The species-specific adsorption occurs through specific functionalization of the aerogels tailored towards specific metals and/or organics. After adsorption, the composites can be disposed of or the targeted metals and/or organics can be reclaimed or removed and the composites recycled.

Abstract: A novel liquid-crystalline ionic conductor, which is useful in the electric, electronic, chemical and bioengineering fields, as an anisotropic reaction solvent, ionic conductor, electric field-responsible conductor or the like, and a method for producing the same, is provided. The liquid-crystalline ionic conductor is obtained by mixing an organic molten salt with a liquid-crystalline organic molecule or a liquid-crystalline inorganic molecule, which comprises a moiety miscible to the organic molten salt and a moiety that shows liquid-crystalline orientation, thereby forming a liquid-crystalline ionic conductor, wherein the organic molten salt is assembled to the liquid-crystalline molecule.

Abstract: Novel phenylcyclohexanes of the formula I 1

Abstract: The invention provides electroluminescent phosphor having superior luminance and a long life. The host material is ZnS.aAO, of which “A” is at least one element selected from among magnesium (Mg), calcium (Ca), strontium (Sr), and barium (Ba). “a” ranges from 0.001 to 0.01. Either one of or both copper (Cu) or manganese (Mn) is contained as an activator. At least one element selected from among chlorine (Cl), bromine (Br), iodine (I), and aluminum (Al) is contained as a co-activator. The luminance and life span of the electroluminescent phosphor can be increased by limiting “a”, which represents the proportion of alkaline earth metal oxide (AO) introduced into the zinc sulfide, within the range of 0.001 to 0.01.

Abstract: The invention relates to an additive, the use thereof and a method for inhibiting corrosion on conveyors and transport devices for hydrocarbons in crude oil transport and processing, whereby an effective amount of an inhibitor is added, containing doubly alkoxylated quaternary compounds. Compounds of formula (1), where R1, R2 independently=groups of formula —(B)—(O-A)n-O—CO—R5 (2), or -(A-O)n—(C)—CO—O—R5 (3), R3=C1 to C30 alkyl or C2 to C30 alkenyl, R4=an organic group with 1 to 100 carbon atoms optionally containing heteroatoms, R5=C1 to C30 alkyl or C2 to C30 alkenyl; n=1 to 20, A=a C2 to C4 alkylene group, B=a C1 to C10 alkylene group, C=a C1 to C6 alkylene group and X=an anion, are used as corrosion inhibitors.

Abstract: A composition that comprises a) an admixing of at least one epoxy resin and aliphatic amine wherein the ratio of epoxy function group/amine is greater than 1; b) a conductive filler; c) one or more corrosion inhibitors, oxygen scavengers or both; d) imidazole as a curing agent/catalyst; and e) optionally other additives such as organic solvents, flow additives, adhesion promoters and rheology modifiers. The reaction of epoxy and aliphatic amine with excess epoxy functionality results in a flexible resin with remaining active epoxy groups. The compositions exhibit improved electrical stability and impact resistance over other conductive adhesive compositions that do not comprise the admixture.

Abstract: A mixture solution for preparing conducting polymers. The conducting polymer is formed from the mixture of monomer and oxidant solution.

Abstract: A composition comprising particulate carbonaceous material and a sulfonated conducting polymer containing hetero atoms. The composition can further comprise a metal. Devices comprising the composition can be constructed including supported electrocatalysts, membrane electrode assemblies, and fuel cells. A method for preparing the composition comprises oxidatively polymerizing with ozone a monomer of a conducting polymer containing hetero atoms in the presence of a carbonaceous material and sulfonating the polymer or the monomer. The method grafts the sulfonated conducting polymer to the carbonaceous material. The method can further comprise metallizing the polymer-grafted carbonaceous material.

Abstract: This invention provides a dielectric composition comprising a dielectric which is fireable in air at a temperature in the range of about 450° C. to about 550° C. and a conductive oxide selected from the group consisting of antimony-doped tin oxide, tin-doped indium oxide, a transition metal oxide which has mixed valence states or will form mixed valence states after firing in a nitrogen atmosphere at a temperature in the range of about 450° C. to about 550° C. and normally conducting precious metal oxides such as ruthenium dioxide, wherein the amount of conductive oxide present is from about 0.25 wt % to about 25 wt % of the total weight of dielectric and conductive oxide. This dielectric composition has reduced electrical resistance and is useful in electron field emission devices to eliminate charging of the dielectric in the vicinity of the electron emitter and the effect of static charge induced field emission.

Abstract: A mobile engine lift apparatus has a base, an extendible vertical support, and pivotable cradle means for lifting, supporting and transporting a motorcycle engine. The apparatus may be rolled into position with the cradle means adjacent a motorcycle engine. Extension means may be engaged to raise the cradle means, thereby lifting the engine away from the motorcycle. The cradle means may be adjusted to a desired position to permit careful removal and replacement of a motorcycle engine without causing damage to the motorcycle or the engine. The apparatus permits lifting and movement of an engine by a single individual in a safe manner. The engine, supported by the cradle means, may then be moved to a preferred location for transfer to a servicing location. The engine may be serviced while supported in the apparatus, or it may be removed from the apparatus for servicing.

Abstract: A joining arrangement having at least one engaging member (3, 49), a screw threaded shaft (2) passing through the engaging member at least one nut (7) threadably engaging the shaft, a gear member (9), a pivot locator (14) on the engaging member such that a shaft (10) with a second gear member (12) may inter engage with the pivot locater while having the said second gear member adapted to interengage with the said first gear member whereby to facilitate a tightening of the joining arrangement.

Abstract: Provided is a carpet stretcher. The carpet stretcher includes: an engaging head comprised at a front end of the carpet stretcher that engages a carpet; a sliding member that is connected to a rear end of the engaging head to move the engaging head back and/or forth within a predetermined space; a housing unit that covers the sliding member; a driving unit that drives the sliding member; and a carpet fixing unit comprised at a rear end of the carpet stretcher to push and fix the carpet. While the carpet is fixed by the engaging head and the carpet fixing unit, the sliding member is moved a predetermined distance by the driving unit, and the engaging head forwards a distance that is equal to the distance by which the sliding member is moved, stretching the carpet.

Abstract: A cable puller has on its actuating lever an elongated grip with an ergonomically friendly shape that directs a user to use both hands placed side by side on the grip when manipulating the lever.

Abstract: An electric fence energiser is intended to reduce exposure of an animal tangled in the fence line to high power deterrent pulses for an indefinite period.

Abstract: A decorative border structure (100) is disclosed. The decorative border structure (100) includes a plurality of border picket assemblies (102), each consisting of a picket portion (108) and a stake (118). Snap assemblages (126) are located on opposing sides of the picket portion (108) of each of the border picket assemblies (102). The snap assemblages (126) are adapted to releasably and pivotably interconnect with trim spacers (104) which, in turn, pivotably and releasably interconnect with adjacent ones of the border picket assemblies (102). The relative structures of the trim spacers (104) and the snap assemblages (126) facilitate assembly of the decorative border structure (100) with curvature, and also permit use of the decorative border structure (100) on uneven terrain or with terrain of substantial inclinations and declinations.

Abstract: A p-type semiconductor barrier layer is provided in the vicinity of undoped quantum dots, and holes in the p-type semiconductor barrier layer are injected in advance in the ground level of the valence band of the quantum dots. Lowering the threshold electron density of conduction electrons in the ground level of the conduction band of quantum dots in this way accelerates the relaxation process of electrons from an excited level to the ground level in the conduction band.

Abstract: The present invention relates to a container for encapsulating organic light emitting diodes (hereinafter, referred to as OLED) and a manufacturing method thereof, wherein a container for encapsulating OLEDs is manufactured by forming a sealant in a glass sheet using a glass frit, thereby resulting in improving the characteristic of junction between the container and the top substrate.

Abstract: The present invention relates to electronic devices comprising an organic compound acting to inject or transport holes with p-type semi-conducting characteristics. The present invention provides for electronic devices comprising at least one or more layers selected from a group composed of a hole injecting layer, a hole transporting layer, and a hole injecting and transporting layer which comprises hexaazatriphenylene based organic compound represented by chemical formula (1), wherein the devices can use low drive-voltage, and can improve a light-emitting life.

Abstract: Methods of forming thin film transistors and related systems are described. In one embodiment, a method forms source/drain material over a substrate using a low temperature formation process. A channel layer is formed over the substrate using a low temperature formation process. A gate insulating layer is formed over the substrate using a low temperature formation process. A gate is formed over the substrate using a low temperature formation process. The low temperature formation processes that are utilized are conducted at temperatures that are no greater than about 200-degrees C.

Abstract: The orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film through heat treatment and irradiation of intense light such as laser light, ultraviolet rays, or infrared rays is enhanced, and a semiconductor device whose active region is formed from the crystalline semiconductor film and a method of manufacturing the semiconductor device are provided. In a semiconductor film containing silicon and germanium as its ingredient and having a crystal structure, the {101} plane reaches 30% or more of all the lattice planes detected by Electron backscatter diffraction.

Abstract: A diamond semiconductor has an exciton light-emission intensity characteristic that varies nonlinearly.

Abstract: In a semiconductor substrate (1), impurity material, for example a metal, is distributed in a layer-like zone (3) in such a way that said zone reflects radiation (6), which is generated or detected by an optoelectronic component, for example. Said layer-like zone (3) is fabricated by implantation of the impurity material into the substrate (1) and subsequent heat treatment for crystallization of the impurity material. Such a substrate is suitable in particular for avoiding the penetration of radiation (6), which is generated for example by radiation-emitting structures (5) applied to the substrate, by reflection in a region of the substrate (1) near the surface and thus for reducing the absorption losses.

Abstract: A semiconductor device having a silicon single crystal substrate and a boron phosphide semiconductor layer containing boron and phosphorus as constituent elements on a surface of the silicon single crystal substrate is disclosed. The surface of the silicon single crystal substrate is a {111} crystal plane inclined at an angle of 5.0° to 9.0° toward a <110> crystal azimuth.

Abstract: Light emitting LEDs devices comprised of LED chips that emit light at a first wavelength, and a thin film layer over the LED chip that changes the color of the emitted light. For example, a blue LED chip can be used to produce white light. The thin film layer beneficially consists of a florescent material, such as a phosphor, and/or includes tin. The thin film layer is beneficially deposited using chemical vapor deposition.

Abstract: A flat panel display with a plurality of pixels. Each pixel has at least a first transistor and a second transistor and a semiconductor layer of the first transistor has a mobility which is different from a semiconductor layer of the second transistor.

Abstract: A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit.

Abstract: A boron phosphide-based semiconductor light-emitting device, which device includes a light-emitting member having a hetero-junction structure in which an n-type lower cladding layer formed of an n-type compound semiconductor, an n-type light-emitting layer formed of an n-type Group III nitride semiconductor, and a p-type upper cladding layer provided on the light-emitting layer and formed of a p-type boron phosphide-based semiconductor are sequentially provided on a surface of a conductive or high-resistive single-crystal substrate and which device includes a p-type Ohmic electrode provided so as to achieve contact with the p-type upper cladding layer, characterized in that a amorphous layer formed of boron phosphide-based semiconductor is disposed between the p-type upper cladding layer and the n-type light-emitting layer. This boron phosphide-based semiconductor light-emitting device exhibits a low forward voltage or threshold value and has excellent reverse breakdown voltage characteristics.

Abstract: A method for dicing a wafer includes providing a wafer formed of a material having a crystal structure which facilitates breaking of the wafer in a substantially consistent and desirable manner without thinning thereof. For example, a wafer formed of Spinal may be used to form die having a thickness greater than 200 micrometers, such that a high luminance AlInGaN based light emitting diode can be formed thereon.

Abstract: A III group nitride system compound semiconductor light emitting element has a quantum well structure that includes a well layer of AlX1GaY1In1−X1−Y1N, where 0<X1, 0≦Y1 and X1+Y1<1 and a barrier layer of AlX2GaY2In1−X2−Y2N, where 0<X2, 0≦Y2 and X2+Y2<1. The Al composition (X2) of barrier layer is equal to or smaller than that (X1) of well layer.

Abstract: A side-emission type semiconductor light-emitting device 10 includes a substrate 12, and the substrate 12 is provided with a case 14 formed of a resin having opacity and reflectivity. The substrate 12 is formed, on its surface, with electrodes 18a and 18b onto which an LED chip 20 is bonded. A transparent or translucent resin 16 is charged between the substrate 12 and the case 14 whereby the LED chip 20 is molded. A light-emitting surface of the side-emission type semiconductor light-emitting device 10 includes surfaces 16a, 16b and a surface opposite to the surface 16b which are formed of the transparent or translucent resin 16. Furthermore, the light-emitting surface is formed by a roughened surface. Due to this, a light outputted from the LED chip and a light reflected from the case 14 is scattered by the light-emitting surface.

Abstract: The present invention provides an optical device and a surface emitting type device which have high efficiency and a stable operation and are manufactured at high manufacturing yield. The optical device and the surface emitting type device are characterized in that they have a distributed Bragg reflector (DBR) including a plurality of semiconductor layers made of a nitride semiconductor with substantially same gaps therbetween. Further, the optical device and the surface emitting type device are characterized in that they have a distributed Bragg reflector (DBR) in which a plurality of semiconductor layers made of nitride semiconductor and a plurality of organic layers made of organic material are alternately laminated.

Abstract: Light emitting LEDs devices comprised of LED chips that emit light at a first wavelength, and a tinted thin film layer over the LED chip that changes the color of the emitted light. For example, a blue-light emitting LED chip can be used to produce white light. The tinted thin film layer beneficially consists of ZnSe, CeO2, Al2O3, or Y2O3:Ce that is deposited using a chemical vapor deposition process, such as metal organic chemical vapor deposition (MOCVD), atomic layer chemical vapor deposition (ALD), plasma enhanced MOCVD, plasma enhanced ALD, and/or photo enhanced CVD. Suitable CVD precursors include Alkoxide, &bgr;-dikeonate, Metalloscene, Alkys, DMZn, DEZe, H2Se, DMSe, ThuSe, and DESe.

Abstract: A semiconductor pressure sensor device has a fully-filling gel structure including a sensor chip for detecting a pressure and generating an electrical signal corresponding to the pressure. This sensor chip of the sensor device is connected with a conductive member such as a terminal using a bonding wire. The sensor chip and bonding wire are covered by a protective member that has characteristics of electric insulation and plasticity. Here, the bonding wire is formed of an alloy of Au and Pd. This structure using a bonding wire of an Au-Pd alloy enables wire strength to be enhanced without the wire diameter being largely increased in comparison with a conventional one.

Abstract: A boron-phosphide-based semiconductor light-emitting device having a semiconductor substrate of a first conduction type having, on its bottom surface, a bottom electrode; a first boron-phosphide-based semiconductor layer of a first conductive type provided on the substrate; a Group III-V compound semiconductor active layer provided on the first boron-phosphide-based semiconductor layer; a second boron-phosphide-based semiconductor layer of second conduction type provided on the active layer; and a top electrode provided on the surface of the second boron-phosphide-based semiconductor layer.

Abstract: A Group III nitride compound semiconductor layer 31 having a pit P is formed owing to a small region S (a). Temperature of a substrate is cooled down, supplying material and amount are switched, and then a second Group III nitride compound semiconductor layer 4 having larger aluminum compound is formed. By forming a layer having larger aluminum compound, the small region S which the first Group III nitride compound semiconductor layer 31 cannot cover is covered by the second Group III nitride compound semiconductor layer 4 (b). The bottom part S of the pit is covered by the second Group III nitride compound semiconductor layer 4 through lateral growth, and the first Group III nitride compound semiconductor layer 32 is grown again through epitaxial growth (c). Accordingly, the Group III nitride compound semiconductor layer 32 rapidly grows in a concave part, to thereby obtain a remarkably flat c-plane can be obtained (d).

Abstract: A nitride-based semiconductor element having excellent element characteristics is obtained by obtaining a nitride-based semiconductor layer having excellent crystallinity without performing a long-time etching process. This nitride-based semiconductor element comprises a mask layer, having a recess portion, formed on a substantially flat upper surface of an underlayer to partially expose the upper surface of the underlayer, a nitride-based semiconductor layer formed on the exposed part of the underlayer and the mask layer while forming a void on the recess portion of the mask layer, and a nitride-based semiconductor element layer, formed on the nitride-based semiconductor layer, having an element region.

Abstract: A semiconductor device comprises: a GaAs substrate; a buffer layer provided on the GaAs substrate; a laminated structure provided on the buffer layer; a Schottky contact layer provided on the laminated structure; a n-type Inx(Ga1−yAly)1−xP layer provided on the Schottky contact layer; a n-type Inu2Ga1−u2As ohmic contact layer provided on the n-type Inx(Ga1−yAly)1−P layer; a gate electrode provided on the Schottky contact layer; and a source electrode and a drain electrode provided on the ohmic contact layer. The buffer layer is made of a semiconductor, and at least a part of the semiconductor has a lattice constant larger than a lattice constant of GaAs. The channel layer is made of Inu1Ga1−u1As, and the electron supply layer is made of n-type Inv1Al1−v1As. At least a part of the Schottky contact layer is made of non-doped Inv2Al1−v2As.