Abstract: The present invention is an electronic interconnect comprising a bond pad consisting essentially of aluminum and copper and configured for use in semiconductor electronic devices to couple a bond wire to an integrated circuit package. The bond pad has an oxide coating residing on at least a topmost surface of the bond pad. The oxide coating consists essentially of aluminum, copper, and oxygen. Therefore, the bond pad has little, if any, naturally occurring corrosion products such as hydrated aluminum hydroxide (Al(OH)3) and/or Al2Cu particles. Al(OH)3 films and Al2Cu particles have been shown to form on aluminum copper bond pads, preventing effective wire-bonding.

Abstract: Dielectric collars to be disposed around contact pads on a surface of a semiconductor device or another substrate and methods of fabricating and disposing the collars on semiconductor devices and other substrates are disclosed. Semiconductor devices including the collars and having contact pads exposed through the collars are also disclosed. One or more of the collars are disposed around the contact pads of a semiconductor device or other substrate before or after conductive structures are secured to the contact pads. Upon connecting the semiconductor device face down to a higher level substrate and establishing electrical communication between contact pads of the semiconductor device and contacts pads of the substrate, the collars prevent the material of conductive structures protruding from the semiconductor device from contacting regions of the surface of the semiconductor device that surround the contact pads thereof.

Abstract: A composite bond pad that is resistant to external forces that may be applied during probing or packaging operations is presented. The composite bond pad includes a non-self-passivating conductive bond pad (134) that is formed over a semiconductor substrate (100). A dielectric layer (136) is then formed over the conductive bond pad (134). Portions of the dielectric layer (136) are removed such that the dielectric layer (136) becomes perforated and a portion of the conductive bond pad (134) is exposed. Remaining portions of the dielectric layer (136) form support structures (138) that overlie that bond pad. A self-passivating conductive capping layer (204) is then formed overlying the bond pad structure, where the perforations in the dielectric layer (136) allow for electrical contact between the capping layer (204) and the exposed portions of the underlying bond pad (134).

Abstract: A method for forming a dual damascene feature is provided. Vias are formed in an etch layer. A trench patterned mask is provided over the etch layer. A trench is etched, where the etching the trench comprises a cycle of forming protective sidewalls over the sidewalls of the vias and etching a trench through the trench patterned mask. The mask is then stripped.

Abstract: A system and method for selecting nanometer-scaled devices. The method includes a plurality of semiconductor wires. Two adjacent semiconductor wires of the plurality of semiconductor wires are associated with a separation smaller than or equal to 100 nm. Additionally, the system includes a plurality of address lines. Each of the plurality of address lines includes a gate region and an inactive region and intersects the plurality of semiconductor wires at a plurality of intersections. The plurality of intersections includes a first intersection and second intersection. The first intersection is associated with the gate region, and the second intersection is associated with the inactive region.

Abstract: Disclosed is a semiconductor device, comprising a first wiring structure formed on a semiconductor substrate and including a first plug and a first wiring formed on the first plug, and a second wiring structure formed on the semiconductor substrate belonging to the wiring layer equal to the first wiring structure and including a second plug and a second wiring formed on the second plug, wherein the upper surface of the first wiring is positioned higher than the upper surface of the second wiring, and the lower surface of the first wiring is positioned flush with or lower than the upper surface of the second wiring. The present invention also provides a method of manufacturing the particular semiconductor device.

Abstract: The present invention provides a method of forming a rigid interconnect structure, and the device therefrom, including the steps of providing a lower metal wiring layer having first metal lines positioned within a lower low-k dielectric; depositing an upper low-k dielectric atop the lower metal wiring layer; etching at least one portion of the upper low-k dielectric to provide at least one via to the first metal lines; forming rigid dielectric sidewall spacers in at least one via of the upper low-k dielectric; and forming second metal lines in at least one portion of the upper low-k dielectric. The rigid dielectric sidewall spacers may comprise of SiCH, SiC, SiNH, SiN, or SiO2. Alternatively, the via region of the interconnect structure may be strengthened with a mechanically rigid dielectric comprising SiO2, SiCOH, or doped silicate glass.

Abstract: A semiconductor device has a guard ring in a multilayer interconnection structure, wherein the guard ring includes a conductive wall extending zigzag in a plane parallel with a principal surface of a substrate.

Abstract: A metal filled damascene structure with improved electromigration resistance and method for forming the same, the method including providing a semiconductor process wafer comprising damascene openings; and, depositing metal and at least one metal dopant according to an ECD process to from a metal filled damascene comprising a doped metal alloy portion.

Abstract: A method for forming a dual damascene including providing a first dielectric insulating layer including a via opening; forming an organic dielectric layer over the first IMD layer to include filling the via opening; forming a hardmask layer over the organic dielectric layer; photolithographically patterning and dry etching the hardmask layer and organic dielectric layer to leave a dummy portion overlying the via opening; forming an oxide liner over the dummy portion; forming a second dielectric insulating layer over the oxide liner to surround the dummy portion; planarizing the second dielectric insulating layer to expose the upper portion of the dummy portion; and, removing the organic dielectric layer to form a dual damascene opening including the oxide liner lining trench line portion sidewalls.

Abstract: A polysulfone composition is provided having a total luminous light transmittance of 84% or greater when measured on 0.1 inch thick specimens using ASTM D-1003. The specimens also meet at least one of the following two conditions: 1) a yellowness index (YI) of less than about 5.0 as measured according to ASTM D-1925 on 0.1 inch thick specimens, or 2) a color factor (CF) of less than about 25, wherein CF is defined by the following equation: CF=270[(x+y)sample?(x+y)air]/t wherein x and y are chromaticity coordinates measured in transmittance mode and t is sample thickness in inches. Another polysulfone composition is provided comprising a polysulfone, an organic phosphorous-containing melt stabilizer, and at least one of the following additives: a blue to violet dye, and an organic optical brightener. The polysulfone composition of the present invention is used to form transparent molded articles such as ophthalmic lenses.

Abstract: A method of forming a metallic wiring layer in a selected region of a layer-stacked plate, which includes the first process of introducing gas consisting of organometallic molecules into a reaction chamber having a layer-stacked plate arranged therein, and forming an adsorbed molecular layer composed of the organometallic molecules on the layer-stacked plate; the second process of reducing the concentration of the gas in the reaction chamber or exhausting the reaction chamber, after forming the adsorbed molecular layer; the third process of carrying a light irradiation against a selected region on the layer-stacked plate; the fourth process of removing the adsorbed molecular layer formed in the region other than the selected region, from the layer-stacked plate; and the fifth process of forming a metallic film in the selected region.

Abstract: A method of cleaning a surface of a silicon wafer includes subjecting the surface of the silicon wafer to a hydrogen (H2) gas plasma containing at least one inert gas while biasing the hydrogen plasma with a RF bias power to direct the hydrogen (H2) plasma to clean the surface of the silicon wafer.

Abstract: A plating method is capable of depositing a plated film having excellent in-plane uniformity with respect to a thin seed layer and excellent embeddability with respect to fine damascene structures. The plating method includes: positioning an electric resistor between a conductive layer formed on at least a portion of a surface of a substrate and an anode; introducing respectively a plating solution into a space between the conductive layer and the anode on a conductive layer side, and an anode solution into a space between the conductive layer and the anode on an anode side, thereby filling the space with a plating bath composed of the plating solution and the anode solution, with the plating solution containing 25 to 75 g/L of copper ions and at least 0.4 mole/L of an organic acid or an inorganic acid, and the anode solution being of the same composition as the plating solution, or containing 0 to 75 g/L of copper ions and at most 0.

Abstract: An exemplary embodiment is related to a method of using an adhesion precursor in an integrated circuit fabrication process. The method includes providing a gas of material over a dielectric material and providing a copper layer over an adhesion precursor layer. The adhesion precursor layer is formed by the gas, and the dielectric material includes an aperture.

Abstract: Disclosed herein is a method of manufacturing a package substrate with a fine circuit pattern using anodic oxidation. By anodizing a metal core which is opened through a masking process, oxidation layers are formed in open areas of the metal core to insulate portions of circuit pattern from each other. Further, by electroplating portions provided between the oxidation layers with copper or filling conductive paste between the oxidation layers using a screen, a package substrate having a fine circuit pattern is achieved.

Abstract: A method of performing microfabrication using a hard mask in the manufacture of a semiconductor device having an interlayer dielectric (ILD) film made of low-dielectric constant, K, insulating material is provided. When treating a low-K dielectric film for use in semiconductor integrated circuitry and its underlying etching stopper film, a patterned resist film is used as a mask to etch a hard mask film. Subsequently, the resist pattern is subjected to stripping or “ashing” in the atmosphere of a mixture gas of hydrogen (H2) and helium (He) at a temperature higher than 200° C. under a pressure of about 1 Torr. With this procedure, microfabrication relying upon the hard mask less in facet is achievable during its subsequent etching of the low-K dielectric film, without damaging the hard mask film upon removal of the resist.

Abstract: The invention provides a laser etching method for optical ablation working by irradiating a work article formed of an inorganic material with a laser light from a laser oscillator capable of emitting in succession light pulses of a large energy density in space and time with a pulse radiation time not exceeding 1 picosecond, wherein, in laser etching of the work article formed of the inorganic material by irradiation thereof with the laser light from the laser oscillator with a predetermined pattern and with a predetermined energy density, there is utilized means for preventing deposition of a work by-product around the etching position.

Abstract: The wiring of the present invention has a layered structure that includes a first conductive layer (first layer) having a first width and made of one or a plurality of kinds of elements selected from W and Mo, or an alloy or compound mainly containing the element, a low-resistant second conductive layer (second layer) having a second width smaller than the first width, and made of an alloy or a compound mainly containing Al, and a third conductive layer (third layer) having a third width smaller than the second width, and made of an alloy or compound mainly containing Ti. With this constitution, the present invention is fully ready for enlargement of a pixel portion. At least edges of the second conductive layer have a taper-shaped cross-section. Because of this shape, satisfactory coverage can be obtained.

Abstract: A method of using carbon spacers for critical dimension reduction can include providing a patterned photoresist layer above a substrate where the patterned photoresist layer has an aperture with a first width, depositing a carbon film over the photoresist layer and etching the deposited carbon film to form spacers on lateral side walls of the aperture of the patterned photoresist layer, etching the substrate using the formed spacers and patterned photoresist layer as a pattern to form a trench having a second width, and removing the patterned photoresist layer and formed spacers using an oxidizing etch.

Abstract: A method for manufacturing a microlens formed on a semiconductor substrate includes the steps of preparing the semiconductor substrate, forming an insulating film, which has high etching selectivity with the semiconductor substrate, on the semiconductor substrate, forming a first resist layer, which has an opening that exposes a part of the insulating film, on the insulating film, forming a lens forming portion by eliminating a part of the insulting film, using the first resist layer as a mask, forming a second resist layer, which has roughly cylindrical shape, on the lens forming portion surrounded by the insulating film, transforming the second resist layer into a third resist layer that has roughly hemispheric shape by reflowing the second resist later with a heat treatment, and forming a lens on the semiconductor substrate by etching the third resist layer, the semiconductor substrate, and the insulating film simultaneously with anisotropic etching.

Abstract: An atomic layer deposition method for forming a microelectronic layer employs a reactor chamber pressure of greater than about 500 mtorr and more preferably from about 20 to about 50 torr. By employing a reactor chamber pressure within the foregoing range, the microelectronic layer is formed with an enhanced deposition rate while employing the atomic layer deposition method, due to a gas phase chemical vapor deposition component to the atomic layer deposition method.

Abstract: A method for forming an oxide layer on a vertical, non-planar semiconductor surface provides a low stress oxide layer having a pristine interface characterized by a roughness of less than 3 angstroms. The oxide layer includes a portion that is substantially amorphous and notably dense. The oxide layer is a graded growth oxide layer including a composite of a first oxide portion formed at a relatively low temperature below the viscoelastic temperature of the oxide film and a second oxide portion formed at a relatively high temperature above the viscoelastic temperature of the oxide film. The process for forming the oxide layer includes thermally oxidizing at a first temperature below the viscoelastic temperature of the film, and slowly ramping up the temperature to a second temperature above the viscoelastic temperature of the film and heating at the second temperature.

Abstract: In one embodiment, the present invention includes introducing a conventional precursor and an organic precursor having an organic porogen into a vapor deposition apparatus; and forming a dielectric layer having the organic porogen on a substrate within the vapor deposition apparatus from the precursors. In certain embodiments, at least a portion of the organic porogen may be removed after subsequent processing, such as dual damascene processing.

Abstract: A photosensitive resist (100) for coating on a semiconductor substrate or a mask comprises a photo acid generator (D), a solvent (E) and at least two different base polymers, of which a first base polymer comprises cycloaliphatic parent structures (A) which substantially absorb incident light at 248 nm and are substantially transparent to incident light at 193 nm, and a second base polymer comprises aromatic parent structures (B) which substantially absorb incident light at 193 nm and are substantially transparent to incident light at 248 nm. If such a resist (100) is applied in a coat thickness of from 50 to 400 nm to a substrate and the proportion of the second base polymer having the aromatic parent structure is between 1 and 25 mol %, a relatively high structure contrast, better stability to etching and a reduction of defects are advantageously achieved in an exposure at a wavelength of 193 nm. Exposure over the entire depth range of the resist (100) is ensured thereby.

Abstract: A method of producing a calibration wafer having at least a predetermined emissivity, including providing a wafer of semiconductor material; subjecting the bulk material of the wafer to doping with foreign atoms and/or generating lattice defects to obtain the predetermined emissivity; and coating the wafer to obtain a further optical characteristic.

Abstract: The invention resides in a system and method of tensioning a net comprising a frame having at least two opposing frame members and a net extending therebetween. The net is made from material of cords of a water soluble yarn capable of high shrinkage rates when wetted with water and dried. A tensioning device may be provided along one of said frame sides for causing tensioning of localized regions in said mesh after said mesh is wetted with water. The invention further resides in a method of tensioning a net to a frame having at least two opposing frame members and the net extending therebetween such that by sizing the net larger than said frame and mounting the net onto the frame such that the border is located outside of the frame and wetting the net and allowing it to dry, the net shrinks around the frame taking up play otherwise existing prior to the wetting step.

Abstract: The invented product is a fleecebacked laminate that is suitable as a single-ply fleecebacked roofing membrane. The laminate consists of the following: 1) a thermoplastic reinforced planar sheet, 2) a needle punched fleece formed on both sides of the thermoplastic reinforced planar sheet, and 3) a thermoplastic polymeric layer extruded onto one side of the fleece. The fleece is formed by needle punching fibers through the reinforced planar sheet. The reinforced planar sheet serves as a common supporting base the resulting two-side fleece. The thermoplastic polymeric layer is embedded with one side of the fleece fibers. The thermoplastic polymeric layer serves as the top layer of the roofing membrane, and the second side of exposed fleece serves as a felt. The thermoplastic polymeric layer is preferably comprised of an extruded PVC substrate, compounded to have excellent weather resistance, printability and to be nonflammable. The fleece fibers are preferably composed of polyester.

Abstract: A three dimensional fabric suitable for use as a moisture management system for footwear and apparel which includes a first surface and a second surface which encase a center section. At least one surface is water repellent and may include pores of a predetermined size to allow moisture to pass therethrough. The fabric further contains a moisture absorbing agent which functions to capture and hold moisture which is later evaporated within a predetermined time period.

Abstract: Disclosed herein are a self-foamed porous ceramic composition and a method for making a porous ceramic using the self-foamed porous ceramic composition. The self-foamed porous ceramic is obtained by fabricating a glass consisting of 41˜47 mole % of calcium oxide (CaO), 41˜47 mole % of silica (SiO2) and 6˜18 mole % of borate (B2O3), pulverizing the glass into a finely-divided glass powder having an average particle size of 1˜10 ?m, molding the glass powder, and sintering the molded glass powder.

Abstract: A high transmittance fairly clear/neutral colored glass composition is provided. An oxidizing agent(s) such as cerium oxide (e.g., CeO2) or the like is added to the glass batch in order to realize very oxidized conditions (i.e., to significantly lower the redox of the resulting glass). As a result of the oxidizing agent(s) used in the batch, the iron is oxidized to a very low FeO (ferrous state) content. For example, this may result in a glass having a glass redox value of no greater than 0.12 (more preferably <=0.10; even more preferably <=0.08; and most preferably <=0.05) and a % FeO (i.e., ferrous content) of from 0.0001 to 0.05%. In certain example embodiments, in order to compensate for yellow or yellow-green coloration a small amount of cobalt (Co) may be provided in the glass to enable it to realize a more neutral color.

Abstract: A ceramic includes alumina in an amount between about 90 and about 99% by weight, a zirconium containing compound in an amount between about 0 and about 1% by weight, and an oxide mixture in an amount between about 1 and about 10% by weight. The oxide mixture includes a glass former and a network modifier, wherein the molar ratio of the glass former to the network modifier ranges between about 0.8:1 and 1.2:1. The ceramic insulator is particularly adapted for use as an insulator in a spark plug to provide improved dielectric strength and shunt resistance of greater than one 1000 megaohms at 1000 degrees Fahrenheit, so as to reduce the shunting of the spark plug and thereby improve the quality of the spark generated by the spark plug.

Abstract: An alumina sintered body having communicating pores of 400–1100 ? in average pore diameter and 4–16% in porosity and being obtainable by mixing first alumina particles 1 having a particle diameter of 0.2–0.7 ?m and a sphericity of 0.7–1.0 as an aggregate and second alumina particles having a particle diameter of 0.01–0.1 ?m as a pore forming material to embed a plurality of the second alumina particles 2 in the spaces between the first alumina particles 1, and sintering the mixture at a temperature of 1200–1400° C. The alumina sintered body can be used for a part for various gas permeable industrial materials inclusive of protective film for gas sensors, and the like.

Abstract: The invention provides a method to transform large quantities of waste glass into useful ceramic products by a low-cost manufacturing process. The method improves green strength compared to previous methods, and does not require water or any other liquid solvent. Only one firing step is needed with a low peak firing temperature of about 700° C.to about 1000° C. The method conserves energy and natural resources compared to clay-based traditional ceramic manufacturing. High-quality impervious ceramic products can be produced by the invention.

Abstract: The present invention relates to a catalyst which consists of a combination of zeolite and platinum or palladium on aluminum oxide. The catalyst is suitable for converting solid Fischer-Tropsch paraffins into microcrystalline waxes.

Abstract: A pre-catalyst is formed by reacting butylethylmagnesium with an alcohol to form a magnesium alkoxide compound, followed by contacting the magnesium alkoxide compound with a phosphorous compound to form a magnesium alkoxide phosphorous compound mixture. The magnesium alkoxide phosphorous compound mixture is subsequently reacted with TiCl4 to form a MgCl2 support. The MgCl2 support is then contacted with an internal donor while being heated to form a first catalyst slurry, which is then contacted with TiCl4 while being heated to form a second catalyst slurry. The second catalyst slurry is next contacted with TiCl4 while being heated to form a third catalyst slurry, which is washed and dried, resulting in a highly active pre-catalyst with controlled morphology. The pre-catalyst may be combined with one or more co-catalysts and optionally one or more external electron donors to form an active catalyst system, which may be used for the polymerization of olefins.

Abstract: A condensed phosphate containing an alkaline earth metal is caused to be present on the surface of titanium dioxide fine particles, and as a result, the condensed phosphate is firmly coupled with the fine particles and is barely liberated from the surface of the fine particles into a medium such as a binder or a resin. As a result, photo-functional particles exhibiting durability and dispersion stability are obtained. By use of the photo-functional particles, a powder and a slurry exhibiting excellent photo-functional property, durability, dispersion stability, and hydrophilicity are produced. In addition, by use of the powder and slurry, a polymer composition, a coating agent, a photo-functional formed article, and a photo-functional structure are produced.

Abstract: The invention concerns the use of zinc derivatives of general formula (I) wherein: L1 represents a group of formula: —E14(R14)(R?14)(R?14), —E15(R15) (R?15) or —E16(R16); E is an atom of group 15; L2 and L3 independently represent a group of formula: —E14(R14)(R?14)(R?14), —E15(R15)(R?15) or —E16(R16), or together form a chain of formula —L?2—A—L?3—; A represents a saturated or unsaturated chain comprising one, two or three elements of group 14; L?2 and L?3 independently represent a group of formula —E14(R14)(R?14) —E15(R15) or —E16—; E14 is an element of group 14; E15 is an element of group 15; E16 is an element of group 16; R14, R?14, R?14, R15, R?15 and R16 represent various groups, as (co) polymerisation catalysts of cyclic esters

Abstract: Compositions including modified carbide-containing nanorods and/or modified oxycarbide-containing nanorods and/or modified carbon nanotubes bearing carbides and oxycarbides and methods of making the same are provided. Rigid porous structures including modified oxycarbide-containing nanorods and/or modified carbide containing nanorods and/or modified carbon nanotubes bearing modified carbides and oxycarbides and methods of making the same are also provided. The compositions and rigid porous structures of the invention can be used either as catalyst and/or catalyst supports in fluid phase catalytic chemical reactions. Processes for making supported catalyst for selected fluid phase catalytic reactions are also provided.

Abstract: A method for forming a supported metal-containing powder. The method comprises forming a dispersion of a particulate support in a solution, which comprises a solvent and a dissolved metal. Heat is removed from the dispersion to precipitate the dissolved metal from the solution onto the particulate support. Preferably, enough heat is removed to freeze the solution. Also, the heat is removed is preferably removed from the dispersion by contacting a container containing the dispersion with a cryogenic liquid. After precipitating the dissolved metal onto the particulate support, the particulate support is separated from the solution, preferably by freeze-drying, to yield the supported metal-containing powder, which comprises the particulate support and a precipitated metal thereon.

Abstract: A process for preparing a vanadium, phosphorus, and oxygen catalyst precursor for preparing maleic anhydride by heterogeneously catalyzed gas-phase oxidation of a hydrocarbon having at least four carbon atoms, which comprises (a) reacting vanadium pentoxide with from 102 to 110% strength phosphoric acid in the presence of a primary or secondary, noncyclic or cyclic, unbranched or branched, saturated alcohol having from 3 to 6 carbon atoms in a temperature range from 80 to 160° C.; (b) isolating the precipitate formed; (c) setting an organic carbon content of ?1.1% by weight in the isolated precipitate by heat treatment in a temperature range from 250 to 350° C., the heat-treated product, following the addition of 3.0% by weight of graphite, giving a powder X-ray diffraction diagram which in the 2? region features a ratio of the height of the peak of any pyrophosphate phase present at 28.5° to the height of the peak due to the graphite at 26.6° of ?0.

Abstract: A visible light induced, highly oxidative, and highly reductive photocatalyst. The photocatalyst includes a first semiconductor with a bandgap between valence band and conduction band thereof between 2.0 eV and 3.0 eV, and second semiconductor, combined with the first semiconductor, with a bandgap between valence band and conduction band thereof between 2.0 eV and 3.0 eV. The conduction band of the first semiconductor is negative relative to that of H2/H2O with a difference of 0.2 eV or greater. The valence band of the second semiconductor is positive relative to that of H2/H2O with a difference of 2.8 eV or greater.

Abstract: An exhaust gas purifying catalyst for an internal combustion engine of an automotive vehicle. The exhaust gas purifying catalyst comprises a monolithic substrate. A first catalytic layer is formed on the monolithic substrate. The first catalytic layer contains at least one noble metal selected from the group consisting of rhodium, platinum and palladium, compound of at least one metal selected from the group consisting of alkali metal, alkaline earth metal and rare earth metal, and alumina. Additionally, a second catalytic layer is formed on the first catalytic layer and contains rhodium, at least one noble metal selected from the group consisting platinum and palladium, compound of at least one metal selected from the group consisting of alkali metal, alkaline earth metal and rare earth metal, and alumina. A content of the compound of the at least one metal in the second catalytic layer is larger than that in the first catalytic layer.

Abstract: The object of the present invention is to provide a catalyst that is highly active and capable of maintaining its activity for a long period of time even in a high-temperature environment. The present invention is a catalyst including: a porous carrier which is comprised of one kind of or two or more kinds of metal oxides; and catalyst particles which are comprised of precious metals or precious metal oxides and supported on the above porous carrier, characterized in that the catalyst particles include: clustered particles formed by the aggregation of first precious metal atoms; and second precious metal ions bound to the above clustered particles. Preferably, the first precious metal and the second precious metal are different metal species which are selected from the group consisting of platinum, palladium, rhodium, ruthenium, silver, gold, iridium and osmium.

Abstract: A catalyst is described for hydrogenation of unsaturated hydrocarbons, containing catalytically active amounts of Pd and optionally Ag in a support. The catalyst is characterized by the fact that the support represents a shaped body with a trilobal cross section, the lobes being provided with continuous openings. The catalysts can be produced according to a method, in which the support is impregnated with a solution of salts of Pd and optionally Ag. These salts are reduced by means of a reducing agent, whereupon the support so impregnated is washed, dried and calcined and, if reduction is not complete, the still present oxides of Pd and Ag are reduced to the corresponding metals in a hydrogen-containing atmosphere.

Abstract: An object of the present invention is to provide a novel phenolic compound, and a recording material containing the same, which is excellent in storage stability. The object can be achieved by a phenolic compound represented by the formula (I): [wherein m represents an integer of 0 to 2; R1 and R2 each independently represents a C1–C6 alkyl group or a C1–C6 alkoxy group; p and q each independently represents an integer of 0 to 4; t and u each independently represents 0 or 1 and do not simultaneously represent 0; and X represents a group represented by any of the formulas (II) to (VII): (wherein R3, R4, R5, R6, R7, R8, R9, R10 and R11 each independently represents a hydrogen atom or a C1–C6 alkyl group; a represents an integer of 1 to 6; b represents an integer of 0 to 4; and c represents an integer of 0 to 6)] and a recording material containing the same.

Abstract: An additive that increases the density of fluids containing a sized barite weighting agent. The wellbore fluid has rheological properties comparable to a conventional wellbore fluids but does not exhibit problems with sag and resulting variations in density. An illustrative embodiment is directed to a method for making the sized barite weighting agent and a method for using such sized barite weighting agent in a wellbore fluid. In one preferred embodiment the sized barite weighting agent has a particle diameter between 4 ?m to 15 ?m In another preferred embodiment, the additive has a D50 (by weight) of approximately 1 ?m to 6 ?m. In another preferred embodiment the additive has a D90 (by weight) of approximately 4 ?m to 8 ?m. The additive may be used in any wellbore fluid such as drilling, cementing, completion, packing, work-over (repairing), stimulation, well killing, and spacer fluid.

Abstract: Methods of reducing sag include combining a cystol ester compound with a non-aqueous fluid and particles to reduce sag in the resulting fluid composition without significantly increasing the viscosity of the fluid composition. The fluid composition CONTAINS the non-aqueous fluid, the particles, and the cystol ester compound. Suitable cystol ester compounds include cystol ester and derivatives of cystol ester having mono-, di-, or tri-substituted aromatic compounds as substituents. The non-aqueous fluid may CONTAINS an invert emulsion, diesel oil, mineral oil, an olefin, an organic ester, a synthetic fluid, or combinations thereof. Further, the fluid composition may be used as a wellbore servicing fluid such as a drilling fluid. The particles may CONTAINS a weighting agent, e.g., barite, galena, hematite, dolomite, calcite, or combinations thereof. The fluid composition may also include organophilic clay.

Abstract: The present invention relates to free-flowable compositions in a pouch which contain different free-flowable components fixed in different regions and to process for making these pouched compositions. The pouch and the compartment (s) thereof are preferably made from stretchable, elastic film which is water-soluble. The compositions are preferably cleaning compositions or fabric care compositions.

Abstract: Disclosed are aqueous liquid laundry detergent compositions which are in the form of an externally structured aqueous liquid matrix having dispersed therein a plurality of visibly distinct beads. Such beads are prepared so as to be in the form of a liquid core surrounded by a semi-permeable membrane formed by interaction of a cationic polymeric material with an anionic polymeric material. Such beads are stable in the aqueous liquid detergent compositions herein yet disintegrate substantially upon their introduction via the composition into agitated dilute aqueous laundering liquors.