Patents Issued in April 19, 2007
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Publication number: 20070085070Abstract: An object of the present invention is to provide a lighting system which uses a stacked light emitting element provided with a plurality of light emitting units and causes little change in emission color even after being used for a long time. A lighting system is provided, which includes a first light emitting element including a plurality of light emitting units; a second light emitting element; a first control means which controls light emission of the first light emitting element; and a second control means which controls light emission of the second light emitting element, where the first light emitting element emits light of a first emission color that is an initial emission color and a second emission color that is an emission color after change over time, and the second light emitting element emits light of a complementary color of the second emission color. With the above structure, color shift due to change over time can be suppressed.Type: ApplicationFiled: October 12, 2006Publication date: April 19, 2007Inventor: Junichiro Sakata
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Publication number: 20070085071Abstract: Provided are a low temperature-cured polymer gate insulation layer and an organic thin film transistor having the same. The gate insulation layer includes an acrylate-based compound, an anhydride-based compound, and an epoxy-based compound each by 0.1 weight % or more.Type: ApplicationFiled: February 15, 2006Publication date: April 19, 2007Inventors: Gi Heon Kim, Sung Min Yoon, In Kyu You, Seung Youl Kang, Seong Deok Ahn, Kyu Ha Baek, Kyung Soo Suh
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Publication number: 20070085072Abstract: Provided is a method of producing a semiconductor device having an organic semiconductor layer, which includes the steps of providing a crystallization promoting layer on a substrate; providing an organic semiconductor precursor on the crystallization promoting layer; and applying light energy and thermal energy simultaneously to the organic semiconductor precursor to form a layer containing an organic semiconductor. Thereby, an organic semiconductor device is provided which is low cost and has excellent durability.Type: ApplicationFiled: August 31, 2006Publication date: April 19, 2007Applicant: CANON KABUSHIKI KAISHAInventors: Akane Masumoto, Shintetsu Go, Tomonari Nakayama, Toshinobu Ohnishi
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Publication number: 20070085073Abstract: It is an object of the present invention to provide an organometallic complex that can emit phosphorescence. In the following general formula (G1), X represents —O— or —N(R10)—. R1 to R9 each represent any of hydrogen, an alkyl group or a cycloalkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkoxycarbonyl group having 1 to 6 carbon atoms, an acyl group having 1 to 6 carbon atoms, an acyloxy group having 1 to 6 carbon atoms, a halogen group, a haloalkyl group, and an aryl group having 6 to 12 carbon atoms. In addition, R10 represents any of an alkyl group or a cycloalkyl group having 1 to 6 carbon atoms, an acyl group having 1 to 6 carbon atoms, an aryl group having 6 to 12 carbon atoms, and a heteroaryl group having 4 to 10 carbon atoms. Moreover, M represents an element belonging to Group 9 or 10.Type: ApplicationFiled: September 27, 2006Publication date: April 19, 2007Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hideko Inoue, Masakazu Egawa, Satoshi Seo
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Publication number: 20070085074Abstract: The present invention provides a blue laser light-absorbent substance, which is suitably used in organic photo conductor, laser optical data carrier or organic light-emitting diodes. The blue laser light-absorbent substance includes a merocyanine compound of the general formula (1) wherein n is an integer of from 0 to 3; R1 is unsubstituted or phenyl-, halogen-, ester-, siliy-substituted linear or branched alkyl group having 1 to 6 carbon atoms; R2 is unsubstituted or substituted phenyl, benzyl or naphthyl; N and R1R2 together represent aromatic-fused N-containing heterocyclic group (NR1R2); Y1 is unsubstituted or substituted alkoxy group having 1 to 8 carbon atoms; Y2 is cyano, nitro, halogen or carboxylate; or O and Y1Y2 together represent epoxy or N-containing heterocyclic hydrocarbonyl ketone (OY1Y2).Type: ApplicationFiled: October 13, 2006Publication date: April 19, 2007Applicant: TUBE SMITH Technology CO.,LTD.Inventors: Fu-Shing Wang, Kuang-Mei Hsu
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Publication number: 20070085075Abstract: To provide an aspect of a novel display device using a light emitting element which is composed of a cathode, an EL layer and an anode, and a manufacturing device of the display device. According to the present invention, dual-sided emission display can be performed in one sheet white color light emitting panel 1001 in which, for example, different images can be displayed on a topside screen and backside screen (full color display, monochrome display or area color display). Two polarizing plates 1002, 1003 are formed by shifting the position thereof with an angular deviation of 90 degrees each other so as to prevent outside light from passing through the pane, thereby realizing a black display when not displayed.Type: ApplicationFiled: December 11, 2006Publication date: April 19, 2007Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shunpei Yamazaki, Hiroko Abe, Masakazu Murakami, Ryoji Nomura
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Publication number: 20070085076Abstract: An organic electronic device of the present invention includes a substrate, at least two electrodes formed on the substrate, a conductive organic thin film that is formed on the substrate and electrically connects the electrodes, and a coating film for coating at least a portion of the electrodes. The conductive organic thin film is a polymer of organic molecules containing a conjugated-bondable group, and one end of each of the organic molecules is chemically bonded to the surface of the substrate and the conjugated-bondable groups in the organic molecules are polymerized with other conjugated-bondable groups to form a conjugated bond chain. The coating film electrically connects the electrodes to the conductive organic thin film and achieves a smaller connection resistance than that in the case where the electrodes and the conductive organic thin film are connected directly.Type: ApplicationFiled: December 5, 2006Publication date: April 19, 2007Applicant: Matsushita Electric Industrial Co., Ltd.Inventors: Shinichi Yamamoto, Norihisa Mino, Kazufumi Ogawa
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Publication number: 20070085077Abstract: An electronic device includes a substrate including a pixel driving circuit, a first conductive member, and a second conductive member. The first and second conductive members are spaced apart, the first conductive member is connected to the pixel driving circuit, and the second conductive member can be part of a power transmission line. The electronic device also includes an electronic component that includes a first electrode that contacts the first conductive member, a second electrode that is connected to but does not contact the second conductive member, and an organic layer lying between the first and second electrodes. The electronic device also includes a third conductive member that is connected to the second electrode and the second conductive member, and contacts the second conductive member. In one embodiment, a process for forming the electronic device uses the second electrode as a hardmask when removing portions of the first organic layer.Type: ApplicationFiled: December 12, 2006Publication date: April 19, 2007Inventors: Gang Yu, Shiva Prakash
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Publication number: 20070085078Abstract: An example memory includes an address control portion, a protection film, a property deterioration material layer, data storage areas, and bonding pads. The protection film protects an organic semiconductor layer of a semiconductor circuit and prevents intrusion of moisture or chemical molecules in the air, light, or the like, into the organic semiconductor layer. Deterioration of the organic semiconductor layer is started by breaking the protection film and using a specified means, thus starting operation of the lifetime period. The property deterioration material layer contains a material for deteriorating the property of the organic semiconductor and deterioration of the organic semiconductor layer is started, for example, by diffusing the material into the organic semiconductor layer.Type: ApplicationFiled: December 15, 2006Publication date: April 19, 2007Inventors: Kazuo Kuroda, Shuuichi Yanagisawa
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Publication number: 20070085079Abstract: A liquid crystal display (LCD) device includes a gate line and a data line crossing each other to define a pixel region on a first substrate, a thin film transistor connected to the gate line and the data line, a first protrusion and a second protrusion formed on the first substrate, a pixel electrode connected to the thin film transistor in the pixel region, a first patterned spacer and a second patterned spacer formed on a second substrate facing the first substrate, wherein the first patterned spacer corresponds to the first protrusion, and the second patterned spacer corresponds to the second protrusion.Type: ApplicationFiled: June 20, 2006Publication date: April 19, 2007Inventors: Na-Kyung Lee, Sung-Lim Nam
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Publication number: 20070085080Abstract: To provide a semiconductor device composed of a semiconductor element or a group of semiconductor elements, in which a crystalline semiconductor film having as few grain boundaries as possible in a channel formation region is formed on an insulating surface, which can operate at high speed, which have high current drive performance, and which are less fluctuated between elements.Type: ApplicationFiled: December 11, 2006Publication date: April 19, 2007Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Atsuo Isobe, Shunpei Yamazaki, Chiho Kokubo, Koichiro Tanaka, Akihisa Shimomura, Tatsuya Arao, Hidekazu Miyairi
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Publication number: 20070085081Abstract: The present invention provides a thin-film semiconductor laser device that utilizes a double-sided heat removal technique and architecture. The term “thin-film semiconductor laser”, as used herein, refers to a semiconductor laser having a p-i-n structure, in which the thickness of the p-layer is no more than 10 times the thickness of the n-layer, or the thickness of the n-layer is no more than 10 times the thickness of the p-layer. The thin-film semiconductor laser device of the present invention exhibits a p-n junction temperature that is only a few degrees higher than the sub-mount temperature. This greatly reduces the thermally related losses and thermally generated stresses of the chip.Type: ApplicationFiled: October 19, 2005Publication date: April 19, 2007Inventor: Fow-Sen Choa
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Publication number: 20070085082Abstract: Light-emitting devices can include a package that supports one or more light-emitting die (e.g., light-emitting diode die, laser diode die) and which can ensure mechanically stability, can facilitate electrical and/or thermal coupling with light-emitting die, and can manipulate the manner by which light generated by the die is emitted out of the light-emitting device. The package can also facilitate the integration of the light-emitting devices in various components and systems. For example, suitable packages may facilitate the use of light-emitting devices in components and systems such as light-emitting panel assemblies, LCD back lighting, general lighting, decorative or display lighting, automotive lighting, and other types of lighting components and systems.Type: ApplicationFiled: December 30, 2005Publication date: April 19, 2007Applicant: Luminus Devices, Inc.Inventors: Alexei Erchak, Michael Lim, Elefterios Lidorikis, Jo Venezia, Nikolay Nemchuk, Robert Karlicek
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Publication number: 20070085083Abstract: Devices, such as light-emitting devices (e.g., LEDs), and methods associated with such devices are provided. A light-emitting device designed to emit light may include an interface through which emitted light passes therethrough, wherein the interface has a dielectric function that varies spatially according to a pattern. The pattern may be arranged to provide anisotropic light emission characterized by an emission pattern on a far-field projection plane substantially parallel to the interface, wherein a first total light intensity along a first axis on the projection plane is at least 20% greater than a second total light intensity along a second axis on the projection plane.Type: ApplicationFiled: March 7, 2006Publication date: April 19, 2007Applicant: Luminus Devices, Inc.Inventors: Alexei Erchak, Elefterios Lidorikis, Michael Lim, Nikolay Nemchuk, Jo Venezia
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Publication number: 20070085084Abstract: Devices, such as light-emitting devices (e.g., LEDs), and methods associated with such devices are provided. A light-emitting device may include an interface through which emitted light passes therethrough. The interface having a dielectric function that varies spatially according to a pattern, wherein the pattern is arranged to provide light emission that has a substantially isotropic emission pattern and is more collimated than a Lambertian distribution of light.Type: ApplicationFiled: March 7, 2006Publication date: April 19, 2007Applicant: Luminus Devices, Inc.Inventors: Alexei Erchak, Elefterios Lidorikis, Michael Lim, Nikolay Nemchuk, Jo Venezia
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Publication number: 20070085085Abstract: The present invention provides for placement of an LED device on a carrier through the use of a pick-and-place tool. The tool conducts electricity at a rate sufficient to prevent charge buildup but not at so high a rate as to overload the LED being placed.Type: ApplicationFiled: August 8, 2006Publication date: April 19, 2007Inventor: Steven Reiber
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Publication number: 20070085086Abstract: An organic light emitting device of high quality is disclosed that can be produced by a simple method and rarely causes color degradation due to current in the device. In one embodiment, the organic light emitting device comprises a substrate, a lower electrode disposed over the substrate, an organic light emitting layer disposed over the lower electrode and in electrical contact with the lower electrode, and an upper electrode disposed over the organic light emitting layer and in electrical contact with the organic light emitting layer. The upper electrode includes a first upper electrode element, a color conversion layer disposed on the first upper electrode element, and a second upper electrode element disposed on the color conversion layer and in electrical contact with the first upper electrode element.Type: ApplicationFiled: October 12, 2006Publication date: April 19, 2007Applicant: Fuji Electric Holdings Co., Ltd.Inventors: Hiromichi GOHARA, Koji Kawaguchi, Toshio Hama, Hiroki Sato
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Publication number: 20070085087Abstract: A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes: a substrate having a substrate surface oriented along a substrate surface plane; a first grown layer including a first grown layer conductivity type formed on the substrate; a masking layer formed on the first grown layer; a second grown layer of a second grown layer conductivity type formed by selective growth through an opening in the masking layer and including a crystal surface oriented along a crystal surface plane; a first cladding layer including a first cladding layer conductivity type formed along at least a portion of the crystal surface plane; an active layer; and a second cladding layer including a second cladding layer conductivity type. At least one of the first cladding layer, the active layer, and the second cladding layer cover the masking layer surrounding the opening.Type: ApplicationFiled: November 9, 2006Publication date: April 19, 2007Applicant: Sony CorporationInventors: Hiroyuki Okuyama, Masato Doi, Goshi Biwa, Toyoharu Oohata, Tomoyuki Kikutani
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Publication number: 20070085088Abstract: In the component of a radiation detector, an upper end face of a pad formation protrusion provided on an upper surface of an MID substrate is equal in height to an upper surface of a photodiode array, first pads are provided on upper surfaces of photodiodes arranged in the photodiode array, respectively, second pads are provided on the upper end face of the pad formation protrusion, a bonding wire is provided between one of the first pads and corresponding one of the second pads, a wiring pattern is provided on the upper surface of the MID substrate, first terminals as many as the second pads and one second terminal are provided on a lower surface of the MID substrate, the second pads and the first terminals are electrically connected to one another in a one-to-one correspondence, and the wiring pattern is electrically connected to the second terminal.Type: ApplicationFiled: October 2, 2006Publication date: April 19, 2007Applicant: NIHON KESSHO KOGAKU CO., LTD.Inventors: Shigenori SEKINE, Toshikazu Yanada
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Publication number: 20070085089Abstract: A high power LED comprises a substrate. An N-type semiconductor layer, an active layer and a P-type semiconductor layer are sequentially deposited on the substrate. A semi-insulator layer or a non-N-type semiconductor layer can be interposed between the N-type semiconductor layer and substrate. At least one N-type electrode is connected to the N-type semiconductor layer and is exposed to an opening of the active layer and P-type semiconductor layer. The N-type electrode with a centralized pattern is formed on the middle of the LED. Furthermore, at least one P-type electrode is coupled to the P-type semiconductor layer. The P-type electrode is arranged like a closed ring or an open ring surrounding the N-type electrode. Therefore, the distribution of current paths is dispersed, and illumination areas are simultaneously uniform.Type: ApplicationFiled: June 21, 2006Publication date: April 19, 2007Applicant: ADVANCED OPTOELECTRONIC TECHNOLOGY INC.Inventor: Chih-Peng Hsu
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Publication number: 20070085090Abstract: Provided are an active matrix driving display device and a method of manufacturing the same. The active matrix driving display device includes: a first buffer layer formed on a plastic substrate; a laser-absorbing layer formed on the first buffer layer; a second buffer layer formed on the laser-absorbing layer; and an active layer formed on the second buffer layer, whereby it is possible to prevent deformation of the plastic substrate even when light or heat is used during the formation of the active layer.Type: ApplicationFiled: June 8, 2006Publication date: April 19, 2007Inventors: Yong Kim, Choong Chung, Jin Lee
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Publication number: 20070085091Abstract: A nitride semiconductor light emitting device is provided. The nitride semiconductor light emitting device includes a first nitride layer comprising at least N-type nitride layer. An insulating member is formed on the first nitride layer having a predetermined pattern. An active layer is formed in both sides of the insulating member on the first nitride layer to emit light. A second nitride layer is formed in both sides of the insulating member on the active layer and the second nitride layer comprises at least a P-type nitride layer.Type: ApplicationFiled: October 16, 2006Publication date: April 19, 2007Inventor: Sang Lee
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Publication number: 20070085092Abstract: A light-emitting device (12) includes a base (14) and two red light-emitting chips (22), two green light-emitting chips (24) and a blue light-emitting chip (26) arranged on the base red, green, blue, green, red in a left-to-right order. The red light-emitting chips, the green light-emitting chips and the blue light-emitting chip include a plurality of red-color quantum dots, green-color quantum dots and blue-color quantum dots respectively. A planar light source (10) includes a planar plate (102), and a plurality of the light-emitting devices arranged in an array on the planar plate. A direct type backlight module (20) includes a diffusing sheet (18) and the planar light source facing a surface of the diffusing sheet.Type: ApplicationFiled: April 3, 2006Publication date: April 19, 2007Applicant: HON HAI Precision Industry CO., LTD.Inventor: Ga-Lane Chen
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Publication number: 20070085093Abstract: A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.Type: ApplicationFiled: September 21, 2006Publication date: April 19, 2007Inventors: Akira Ohmae, Michinori Shiomi, Noriyuki Futagawa, Takaaki Ami, Takao Miyajima, Yuuji Hiramatsu, Izuho Hatada, Nobukata Okano, Shigetaka Tomiya, Katsunori Yanashima, Tomonori Hino, Hironobu Narui
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Publication number: 20070085094Abstract: Disclosed is a flat panel display capable of improving a white balance by making channel regions of transistors of R, G, and B unit pixels with different current mobilities. The flat panel display includes a plurality of pixels, each of the pixels including R, G and B unit pixels to embody red (R), green (G), and blue (B) colors, respectively, and each of the unit pixels including at least one transistor. Channel layers of the transistors of at least two unit pixels among the R, G, and B unit pixels have different current mobilities from one another. The R, G, B unit pixels includes transistors and the transistor of at least one unit pixel among the R, G, and B unit pixels includes the channel layer made of silicon layers of different film qualities.Type: ApplicationFiled: December 14, 2006Publication date: April 19, 2007Applicant: Samsung SDI Co., Ltd.Inventors: Jae-Bon Koo, Ji-Yong Park, Sang-Il Park, Deuk-Jong Kim, Ul-Ho Lee, Jin-Soo Kim, Jin-Woung Jung, Chang-Gyu Lee
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Publication number: 20070085095Abstract: A nitride based semiconductor LED is provided. In the nitride based semiconductor LED, an n-type nitride semiconductor layer is formed on a substrate. the n-type nitride semiconductor layer has the top surface divided into a first region and a second region with a finger structure, so that the first region and the second region are meshed with each other. An active layer is formed on the second region of the n-type nitride semiconductor layer. A p-type nitride semiconductor layer is formed on the active layer, and a reflective electrode is formed on the p-type nitride semiconductor layer. A p-electrode is formed on the reflective electrode, and an n-electrode is formed on the first region of the n-type nitride semiconductor layer. A plurality of n-type electrode pads are formed on the n-electrode. At least one of the n-type electrode pads are arranged adjacent to different sides of the n-electrode.Type: ApplicationFiled: October 5, 2006Publication date: April 19, 2007Inventors: Kun Ko, Seok Hwang, Hyung Park
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Publication number: 20070085096Abstract: An LED package is provided. The LED package includes: at least one device having at least one LED; at least one resistor having a resistance component; a plurality of bonding pads formed spaced apart from each other on one side of the resistor and changing resistance of the resistor according to a wire bonding position; a conductive part having a current flowing path to electrically connect the device and the resistor; and a substrate having the device, the resistor, and the conductive part.Type: ApplicationFiled: October 12, 2006Publication date: April 19, 2007Inventor: Bo Park
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Publication number: 20070085097Abstract: The invention provides a highly reliable nitride semiconductor light emitting device improved in electrostatic discharge withstand voltage. In the light emitting device, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are sequentially formed on a substrate. The active layer features a multiple quantum well structure including a plurality of multiple quantum barrier layers and quantum well layers. At least one of the quantum barrier layers has a band-gap modulated multilayer structure.Type: ApplicationFiled: October 17, 2006Publication date: April 19, 2007Inventors: Sun Kim, Je Kim, Sang Kang, Keun Song, Bang Oh
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Publication number: 20070085098Abstract: Devices, such as light-emitting devices (e.g., LEDs), and methods associated with such devices are provided. The device may include an interface having a dielectric function that varies spatially according to a transformed pattern, wherein the transformed pattern conforms to a transformation of a precursor pattern according to a mathematical function. A method is also provided for generating a pattern for incorporation in a device. The method comprises providing a precursor pattern, and transforming the precursor pattern according to a mathematical function, thereby generating a transformed pattern. Alternatively, or additionally, the device may include an interface having a dielectric function that varies spatially according to a transformed pattern, wherein the transformed pattern conforms to a transformation of a periodic precursor pattern according to a mathematical function.Type: ApplicationFiled: March 7, 2006Publication date: April 19, 2007Applicant: Luminus Devices, Inc.Inventors: Alexei Erchak, Elefterios Lidorikis, Michael Lim, Nikolay Nemchuk, Jo Venezia
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Publication number: 20070085099Abstract: A semiconductor substrate cutting method which can efficiently cut a semiconductor substrate having a front face formed with a functional device together with a die bonding resin layer is provided. A wafer 11 having a front face 3 formed with a functional device 15 is irradiated with laser light L while positioning a light-converging point P within the wafer 11 with the rear face 17 of the wafer 11 acting as a laser light incident face, so as to generate multiphoton absorption, thereby forming a starting point region for cutting 8 due to a molten processed region 13 within the wafer 11 along a line along which the substrate should be cut 5. Consequently, a fracture can be generated from the starting point region for cutting 8 naturally or with a relatively small force, so as to reach the front face 3 and rear face 17.Type: ApplicationFiled: September 9, 2004Publication date: April 19, 2007Inventors: Kenshi Fukumitsu, Fumitsugu Fukuyo, Naoki Uchiyama, Ryuji Sugiura, Kazuhiro Atsumi
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Publication number: 20070085100Abstract: A high efficiency light emitting diode (LED) comprised of a substrate, a buffer layer grown on the substrate (if such a layer is needed), a first active region comprising primary emitting species (PES) that are electrically-injected, a second active region comprising secondary emitting species (SES) that are optically-pumped by the light emitted from the PES, and photonic crystals, wherein the photonic crystals act as diffraction gratings to provide high light extraction efficiency, to provide efficient excitation of the SES, and/or to modulate the far-field emission pattern.Type: ApplicationFiled: October 14, 2005Publication date: April 19, 2007Inventors: Frederic Diana, Aurelien David, Pierre Petroff, Claude Weisbuch
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Publication number: 20070085101Abstract: Provided is an LED package. It is easy to control luminance according to the luminance and an angle applicable. Since heat is efficiently emitted, the LED package is easily applicable to a high luminance LED. The manufacturing process is convenient and the cost is reduced. The LED package includes a substrate, an electrode, an LED, and a heatsink hole. The electrode is formed on the substrate. The LED is mounted in a side of the substrate and is electrically connected to the electrode. The heatsink hole is formed to pass through the substrate, for emitting out heat generated from the LED.Type: ApplicationFiled: October 19, 2006Publication date: April 19, 2007Inventor: Wan Kim
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Publication number: 20070085102Abstract: Projections/depressions forming a two-dimensional periodic structure are formed in a surface of a semiconductor multilayer film opposing the principal surface thereof, while a metal electrode with a high reflectivity is formed on the other surface. By using the diffracting effect of the two-dimensional periodic structure, the efficiency of light extraction from the surface formed with the projections/depressions can be improved. By reflecting light emitted toward the metal electrode to the surface formed with the projections/depressions by using the metal electrode with the high reflectivity, the foregoing effect achieved by the two-dimensional periodic structure can be multiplied.Type: ApplicationFiled: December 11, 2006Publication date: April 19, 2007Applicant: Matsushita Electric Industrial Co., Ltd.Inventor: Kenji Orita
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Publication number: 20070085103Abstract: A light emitting device comprises: an LED chip mounted in a recess formed in a mounting substrate; a wavelength converting member that is disposed so as to cover the recess and the edge area around the recess and that is excited by light emitted from the LED chip to emit light of a wavelength different from an excitation wavelength; and an emission control member disposed at a light output side of the wavelength converting member so as to allow emission of light coming from an area of the wavelength converting member that corresponds to the recess and to prevent emission of light coming from an area of the wavelength converting member that corresponds to the edge area around the recess. This can prevent variations in color between light emitted from the central part of the wavelength converting member and light emitted from the part of the wavelength converting member that is located on the edge area around the recess of the mounting substrate, thereby reducing unevenness of color on the irradiation surface.Type: ApplicationFiled: November 25, 2004Publication date: April 19, 2007Applicant: MATSUSHITA ELECTRIC WORKS, LTD.Inventors: Kouji Nishioka, Masaru Sugimoto, Hideyoshi Kimura, Ryoji Yokotani, Yutaka Iwahori, Takuma Hashmoto, Shinya Ishizaki, Satoshi Mori, Hiroyuki Sekii, Eiji Shiohama
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Publication number: 20070085104Abstract: A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contact layer, an ohmic contact to the p-type contact layer, and a sputter-deposited silicon nitride composition passivation layer on the ohmic contact. The contact layer, the ohmic contact and the passivation layer are made of materials that transmit light generated in the active heterojunction.Type: ApplicationFiled: October 6, 2006Publication date: April 19, 2007Applicant: Cree, Inc.Inventors: John Edmond, Brian Thibeault, David Slater, Gerald Negley, Van Allen Mieczkowski
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Publication number: 20070085105Abstract: The invention is an illumination system that incorporates a light emitting diode and a side-emitting light-recycling lens. The side-emitting light-recycling lens recycles part of the light internally generated by a light emitting diode back to the light emitting diode as externally incident light. The light emitting diode reflects a portion of the recycled light, thereby increasing the effective brightness of the light emitting diode. The light reflected by the light emitting diode is directed though the side-emitting light-recycling lens and exits the illumination system, thereby increasing the output brightness and efficiency of the illumination system. The light emitting diode reflects externally incident light with a reflectivity greater than 40 percent.Type: ApplicationFiled: October 18, 2005Publication date: April 19, 2007Inventors: Karl Beeson, Scott Zimmerman
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Publication number: 20070085106Abstract: To provide a light emitting element driven at a low voltage, and a light emitting element and an electronic apparatus with low power consumption. The invention provides a light emitting element in which a light emitting layer containing a light emitting substance and a layer containing bathophenanthroline are provided between a first electrode and a second electrode. The light emitting substance emits light when a voltage is applied so that the potential of the first electrode is higher than that of the second electrode.Type: ApplicationFiled: October 13, 2006Publication date: April 19, 2007Inventors: Takahiro Kawakami, Junichiro Sakata, Hisao Ikeda, Tomoya Aoyama
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Publication number: 20070085107Abstract: A light emitting device, free from change of color even when the wavelength of a light emitting element shifts, includes a light emitting element (106) for emitting primary light having an intensity peak at a wavelength shorter than 400 nm; a silicone resin (111) provided to embed the light emitting element; and a fluorescent element (110) contained in the silicone resin to absorb the primary light and release visible light.Type: ApplicationFiled: December 7, 2006Publication date: April 19, 2007Applicants: KABUSHIKI KAISHA TOSHIBA, TOYODA GOSEI CO., LTD.Inventors: Koichi NITTA, Hiroaki OSHIO, Kenji SHIMOMURA, Tomokazu KITAJIMA, Nozomu TAKAHASHI
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Publication number: 20070085108Abstract: The present invention provides all organic fully-packaged miniature bandpass filters, baluns, diplexers, multiplexers, couplers and a combination of the above manufactured using liquid crystalline polymer (LCP) and other multilayer polymer based substrates. These devices are manufactured using one or more LCP layers having integrated passive components formed thereon to provide the density and performance necessary for multi-band wireless devices. In the designs involving multiple LCP layers, the LCP layers arc separated by prepeg layers. In accordance with an aspect of the present invention, coplanar waveguide, hybrid stripline/coplanar waveguide and/or microstrip topologies are utilized to form the integrated passive components, and the devices can be mass produced on large area panels at least 18 inches by 12 inches with line widths smaller than 10 um.Type: ApplicationFiled: February 23, 2005Publication date: April 19, 2007Inventors: George White, Madhavan Swaminathan, Venkatesh Sundaram, Sidharth Dalmia
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Publication number: 20070085109Abstract: The single element optical sensor of this invention is a two-terminal element and comprises a light absorbing semiconductor layer, potential barrier materials positioned in said light absorbing layer and two electrodes connected to said light absorbing layer. Positions and chemical compositions of the potential barriers are adjusted according to wavebands of interests. Under different bias conditions photoelectric voltages with separated peaks are generated by the invented optical sensor, whereby color elements of an image may be obtained. Distinguish of light waves of selected wavebands may thus be achieved.Type: ApplicationFiled: October 14, 2005Publication date: April 19, 2007Applicant: Frontend Analog and Digital Technology CorporationInventors: Yung-Jane Hsu, Yeu-Long Jiang
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Publication number: 20070085110Abstract: A primary object of the present invention is to provide a photoelectric conversion apparatus with less leak current in a floating diffusion region. In order to obtain the above object, a photoelectric conversion apparatus according to the present invention includes a photodiode for converting light into a signal charge, a first semiconductor region having a first conductivity type, a floating diffusion region formed from a second semiconductor region having a second conductivity type for converting the signal charge generated by the photodiode into a signal voltage, the second semiconductor region being formed in the first semiconductor region, and an electrode formed above the first semiconductor region through an insulating film and having an effect of increasing a concentration of majority carriers in the first semiconductor region, in which the electrode is not formed above a depletion region formed from the second semiconductor region.Type: ApplicationFiled: December 7, 2006Publication date: April 19, 2007Applicant: CANON KABUSHIKI KAISHAInventors: AKIRA OKITA, Katsuhito Sakurai, Hiroki Hiyama, Hideaki Takada
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Publication number: 20070085111Abstract: A power semiconductor device having a termination structure that includes a polysilicon field plate, a metallic field plate, and a polysilicon equipotential ring.Type: ApplicationFiled: September 14, 2006Publication date: April 19, 2007Inventors: Jianjun Cao, Nazanin Amani, Daniel Kinzer
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Publication number: 20070085112Abstract: As a wiring becomes thicker, discontinuity of an insulating film covering the wiring has become a problem. It is difficult to form a wiring with width thin enough for a thin film transistor used for a current high definition display device. As a wiring is made thinner, signal delay due to wiring resistance has become a problem. In view of the above problems, the invention provides a structure in which a conductive film is formed in a hole of an insulating film, and the surfaces of the conductive film and the insulating film are flat. As a result, discontinuity of thin films covering a conductive film and an insulating film can be prevented. A wiring can be made thinner by controlling the width of the hole. Further, a wiring can be made thicker by controlling the depth of the hole.Type: ApplicationFiled: November 30, 2004Publication date: April 19, 2007Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Shinji Maekawa, Yohei Kanno
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Publication number: 20070085113Abstract: A dielectric material prepared from a siloxy/metal oxide hybrid composition, and electronic devices such as thin film transistors comprising such dielectric material are provided herein. The siloxy/metal oxide hybrid composition comprises a siloxy component such as, for example, a siloxane or silsesquioxane.Type: ApplicationFiled: November 9, 2006Publication date: April 19, 2007Inventors: Yiliang Wu, Beng Ong, Ping Liu
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Publication number: 20070085114Abstract: The field of the invention is that of photodetectors (10), and more precisely so-called quantum well photodetectors operating in the medium infrared, known by the acronym QWIP standing for Quantum Well Infrared Photodetector. It is an object of the invention to increase the detectivity of the detectors by significantly reducing the surface area of the detection zone while conserving the incident flux. This result is obtained by arranging a structure (4) or grating on the active zone (31) of the photodetector (10), which couples the incident wave and confines it on the active zone (31). The major features of this structure (4) or this grating are that it comprises patterns or grooves having a first spatial frequency and a second spatial frequency, and also comprising a central defect.Type: ApplicationFiled: December 7, 2004Publication date: April 19, 2007Inventors: Alfredo De Rossi, Mathieu Carras, Philippe Bois
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Publication number: 20070085115Abstract: A memory cell, suitable for being disposed on a substrate, comprises a poly-Si island, a first dielectric layer, a trapping layer, a second dielectric layer and a control gate. The poly-Si island is disposed on the substrate and includes a source doped region, a drain doped region and a channel region there-between. The first dielectric layer is disposed on the poly-Si island, the trapping layer is disposed on the first dielectric layer, the second dielectric layer is disposed on the trapping layer and the control gate is disposed on the second dielectric layer. The above-described memory cell can be integrated into the manufacturing process of a low temperature polysilicon LCD panel (LTPS LCD panel) or an organic light emitting display panel (OLED panel).Type: ApplicationFiled: April 12, 2006Publication date: April 19, 2007Inventors: Hung-Tse Chen, Chi-Lin Chen, Yu-Cheng Chen, Chi-Wen Chen, Ting-Chang Chang
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Publication number: 20070085116Abstract: A substrate for a display device includes a plurality of first lines on the substrate in a display area of the display device, a plurality of link lines on the substrate in a link region, the link lines electrically connected to the first lines and the link region being in a non-display area of the display device, an insulating layer on the first lines and the link lines, a plurality of second lines on the insulating layer, patterns on the insulating layer in the link region and at least partially overlapping the link lines, the patterns including an intrinsic semiconductor material, and a passivation layer on the second lines and the patterns, the passivation layer having at least one through hole exposing the intrinsic semiconductor material of at least one of the patterns.Type: ApplicationFiled: March 7, 2006Publication date: April 19, 2007Applicant: LG.PHILIPS LCD CO., LTD.Inventors: Ju-Bok Lee, Jae-Gu Lee
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Publication number: 20070085117Abstract: A photodetector array includes a semiconductor substrate having opposing first and second main surfaces, a first layer of a first doping concentration proximate the first main surface, and a second layer of a second doping concentration proximate the second main surface. The photodetector includes at least one conductive via formed in the first main surface and an anode/cathode region proximate the first main surface and the at least one conductive via. The via extends to the second main surface. The conductive via is isolated from the semiconductor substrate by a first dielectric material. The anode/cathode region is a second conductivity opposite to the first conductivity. The photodetector includes a doped isolation region of a third doping concentration formed in the first main surface and extending through the first layer of the semiconductor substrate to at least the second layer of the semiconductor substrate.Type: ApplicationFiled: October 11, 2006Publication date: April 19, 2007Applicant: Icemos Technology CorporationInventors: Robin Wilson, Conor Brogan, Hugh Griffin, Cormac MacNamara
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Publication number: 20070085118Abstract: A LCD device prevents corrosion of the transparent conductive layers and contact resistance increase without arising the step coverage degradation due to the thickness increase of the interconnection layer, the step coverage degradation due to the formation of undercut portions, and productivity reduction and fabrication cost increase. A first interconnection line comprising a patterned Al or Al alloy layer is disposed on or over an insulating plate. A first insulating layer is formed to cover the first interconnection line to have a contact hole exposing a part of the first interconnection line. A first conductive material made of a plated metal is in contact with the exposed part of the first interconnection line in the contact hole. A first transparent conductive layer is in contact with the first conductive material. The first transparent conductive layer is electrically connected to the first interconnection line by way of the first conductive material.Type: ApplicationFiled: October 18, 2006Publication date: April 19, 2007Applicant: NEC LCD TECHNOLOGIES, LTD.Inventor: Kyounei Yasuda
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Publication number: 20070085119Abstract: Disclosed are a CMOS image sensor and a method for manufacturing the same, for reducing or preventing damage to a photodiode and improving a pixel design margin to achieve scale down of a pixel. The CMOS image sensor includes an isolation layer in a semiconductor substrate, a gate electrode crossing a part of the isolation layer and the active area, a photodiode area in the active area, an insulating sidewall spacer on sides of the gate electrode, a metal silicide layer on the gate electrode and at least part of a surface of the photodiode area adjacent to the gate electrode, a metal layer electrically connecting the gate electrode to the photodiode area, and a dielectric layer on the entire surface of semiconductor substrate.Type: ApplicationFiled: October 12, 2006Publication date: April 19, 2007Inventor: In Jeon