Abstract: A connecting member between wiring films is provided in which: a normal copper foil, which is a general-purpose component and not expensive, or the like can be used as a material; formation of bumps is sufficiently achieved by conducting etching one time; and a necessary number of layers can be laminated and pressed collectively at a time. Bumps, which are formed approximately in a cone-shape, for connecting wiring films of a multilayer wiring substrate are embedded in a second resin film that serves as an interlayer insulating film.

Abstract: A thin hard mask is formed over a semiconductor substrate. The thin hard mask allows diffusion of a sacrificial material or pore-forming agent therethrough to form an underlying air gap or porous dielectric region. The thin hard mask may be a polymer or an initially porous material that may be later densified. The thin hard mask may be used to prevent etch steps used in forming an unlanded via from reaching layers below the hard mask.

Abstract: An apparatus including a contact point formed on a device layer of a circuit substrate or an interconnect layer on the substrate; a first dielectric material; and a different second polymerizable dielectric material on the substrate and separated from the device layer or the interconnect layer by the first dielectric material following polymerization, the second dielectric material comprising a glass transition temperature of at least 250° C. and a thermal decomposition temperature of at least 400° C. A method including depositing a dielectric material and thermally treating the dielectric material at a temperature greater than the thermal decomposition temperature.

Abstract: Methods for fabricating a copper interconnect of a semiconductor device are disclosed. An example method for fabricating a copper interconnect of a semiconductor device deposits a first insulating layer on a substrate having at least one predetermined structure, forms a trench and via hole through the first insulating layer by using a dual damascene process, and deposits a barrier layer along the bottom and the sidewalls of the trench and via hole.

Abstract: When chemical mechanical planarization (CMP) is used to planarize a surface coexposing patterned features and dielectric fill, where patterned features and the fill are formed of materials having very different CMP removal rates or characteristics, the planarized surface may have excessively rough, dishing or recessing may take place, or one or more or the materials may be damaged. In structures in which planarity is important, these problems can be prevented by forming a capping layer on the patterned features, wherein the CMP removal rate of the material forming the capping layer is similar to the CMP removal rate of the dielectric fill.

Abstract: A semiconductor device comprises a first insulating film formed over a semiconductor substrate, a second insulating film formed on the first insulating film, a contact plug made of a conductive material vertically penetrating the first and second insulating films and extending on the second insulating film, and a conductor film in contact with the upper surface of the contact plug and part of the second insulating film. This construction makes it possible to form minute via-holes in a mass-production line without increasing parasitic capacity, increasing the number of manufacturing steps, and generating defects.

Abstract: A method for fabricating a semiconductor device has the steps of forming a conductive film on a substrate, forming an insulating film such that the conductive film is covered with the insulating film, forming, in the insulating film, a hole having a bottom portion not reaching the conductive film by using a mask layer having a first opening pattern, and forming, in the insulating film, an opening for exposing the conductive film by using a mask layer having a second opening pattern having an opening diameter larger than an opening diameter of the first opening pattern. An obtuse angle is formed between a wall surface of the opening and a bottom surface of the opening.

Abstract: A method for selectively depositing a source material on a wafer is disclosed. In one embodiment, a wafer is having at least one recessed feature is provided. A top surface of the wafer is then coated with an inhibiting material. Finally, a source material is selectively deposited in the at least one recessed feature, the source material repelled by the inhibiting material. In another embodiment, the inhibiting material is one of a wax, a surfactant or an oil.

Abstract: A salicide process is provided. A metal layer selected from a group consisting of titanium, cobalt, platinum, palladium and an alloy thereof is formed over a silicon layer. A first thermal process is performed. Next, a second thermal process is performed, wherein the second thermal process includes a first step performed at 600˜700 degrees centigrade for 10˜60 seconds and a second step performed at 750˜850 degrees centigrade for 10˜60 seconds. If the metal layer is selected from a group consisting of nickel and an alloy thereof is formed on a silicon layer, the first step of the second thermal process is performed at 300˜400 degrees centigrade for 10˜60 seconds and the second step of the second thermal process is performed at 450˜550 degrees centigrade for 10˜60 seconds.

Abstract: A metal salicide layer is formed by sequentially depositing a physical vapor deposition (PVD) metal layer and a chemical vapor deposition (CVD) metal layer on a semiconductor device having an exposed silicon surface so as to form a double metal layer. The semiconductor device is annealed to react the double metal layer with the silicon surface. At least a portion of the double layer that has not reacted with the silicon surface is stripped. The semiconductor device is annealed after stripping at least the portion of the double metal layer.

Abstract: Methods of forming a roughened surface through diffusion-enhanced crystallization of an amorphous material are disclosed. In one aspect, conductive hemispherical grain silicon can be formed through dopant diffusion-enhanced crystallization of one or more layers of amorphous silicon. To further enhance uniformity in the formation of the hemispherical grain silicon, the exposed surface of the amorphous silicon can be seeded before crystallization to further enhance uniformity of the surface structures formed in the hemispherical grain silicon.

Abstract: Methods for fabricating one or more metal (e.g., copper) damascene structures in a semiconductor wafer use at least three polishing steps to reduce erosion topography in the resulting metal damascene structures and/or increase throughput. The polishing steps may be performed at four polishing units of a polishing apparatus, which may include one or more pivotable load/unload cups to transfer the semiconductor wafer between some of the polishing units.

Abstract: A metal element formation method includes a seed layer formation step for forming a seed layer on a treatment surface of a substrate, and a plating formation step for forming a plating layer on the seed layer, wherein in the seed layer formation step, a liquid repellent section is formed on the treatment surface, and a liquid phase method is used to form the seed layer in a region outside the liquid repellent section.

Abstract: The present invention provides a processing system comprising a remote plasma activation region for formation of active gas species, a transparent transfer tube coupled between the remote activation region and a semiconductor processing chamber, and a source of photo-energy for maintaining activation of the active species or providing photo-energy for a non-plasma species during transfer through the transparent tube to the processing chamber. The source of photo-energy preferably includes an array of UV lamps. Additional UV lamps may also be used to further sustain active species and assist processes by providing additional in-situ energy through a transparent window of the processing chamber. The system can be utilized for processes such as layer-by-layer annealing and deposition and also removal of contaminants from deposited layers.

Abstract: A method for fabricating a semiconductor device to minimize a terminal effect in an ECP process is disclosed. The method for fabricating a semiconductor device to minimize a terminal effect in an ECP process, comprises depositing a barrier metallic layer on the top of a damascene pattern formed through an etching process, forming an Ag seed layer by employing a heating process for the reaction of the surface of the barrier metallic layer and a NH3 solution of AgNO3 and reductive materials in a reactor, plating a Cu layer by using the Ag seed layer through an ECP process and forming a Cu interconnect through an annealing process and a Cu CMP process. The method for fabricating a semiconductor device according to the present invention provides the improvement of uniformity by forming a seed layer with low-resistivity regardless of a thin thickness in order to avoid a terminal effect in an ECP process.

Abstract: A system, composition, and a method for planarizing or polishing a composite substrate are provided. The planarizing or polishing system comprises (i) a polishing composition comprising (a) about 0.5 wt. % or more of fluoride 5 ions, (b) about 1 wt. % or more of an amine, (c) about 0.1 wt. % or more of a base, and (d) water, and (ii) an abrasive. The present invention also provides a method of planarizing or polishing a composite substrate comprising contacting the substrate with a system comprising (i) a polishing composition comprising (a) about 0.5 wt. % or more of fluoride ions, (b) about 1 wt. % or more of an amine, (c) about 0.1 wt. % or more of a base, and (d) water, and (ii) an abrasive.

Abstract: A via-first dual damascene process is disclosed. When forming trench lines directly above two small pitched, dense via openings having diameter that is substantially equal to the line width of the trench lines, the trench photoresist is biased on the via openings to partially mask the sidewalls of the two dense via openings. By doing this, via-to-via bridging defects can be avoided.

Abstract: A system and method is disclosed for using a differential wet etch stop technique to provide a uniform oxide layer over a metal layer in a laser trimmed fuse. A layer of boron doped oxide with a slow etch rate is placed over the metal layer. A layer of phosphorus doped oxide with a fast etch rate is placed over the boron doped oxide. The time period required for a wet etch process to etch through the phosphorus doped oxide is calculated. The wet etch process is then applied to the phosphorus doped oxide for the calculated time period. The wet etch process slows significantly when it reaches the boron doped oxide. This method forms a uniform layer of boron doped oxide over the metal layer.

Abstract: A method for fabricating an optical device and micromechanical device, wherein both devices are monolithically-integrated with a substrate. The optical surfaces and micromechanical devices are each formed in an etch step that is well-suited for forming that device. In addition, the embodiments of the present invention enable the optical surface and micromechanical device to be fabricated irrespective of severe topography on the surface of the substrate.

Abstract: A method of forming a virtual substrate comprised of an optoelectronic device substrate and handle substrate comprises the steps of initiating bonding of the device substrate to the handle substrate, improving or increasing the mechanical strength of the device and handle substrates, and thinning the device substrate to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. The handle substrate is typically Si or other inexpensive common substrate material, while the optoelectronic device substrate is formed of more expensive and specialized electro-optic material. Using the methodology of the invention a wide variety of thin film electro-optic materials of high quality can be bonded to inexpensive substrates which serve as the mechanical support for an optoelectronic device layer fabricated in the thin film electro-optic material.

Abstract: The present invention provides a system (100) for aligning a dispensing apparatus (110) utilized within a semiconductor deposition chamber (102). A stationary reference apparatus (106) is disposed along the bottom of the deposition chamber. A self-alignment support system (122), comprising one or more support components (124), is intercoupled between the dispensing apparatus and a deposition system exterior component (112). The self-alignment support system is adapted to facilitate and secure repositioning of the dispensing apparatus responsive to pressure applied to the dispensing surface (114) thereof. A non-yielding offset component (126) is placed upon a first surface (108) of the stationary reference apparatus. The dispensing surface of the dispensing apparatus is engaged with the offset component, and pressure is applied to the dispensing apparatus via the offset component until a desired alignment is achieved.

Abstract: The present disclosure relates generally to the manufacturing of semiconductor devices, and more particularly to semiconductor manufacturing using a vacuum chamber. In one example, a method for semiconductor manufacturing includes: providing a photoresist layer for a wafer; removing solvent residues from the photoresist layer by using a vacuum chamber; and exposing the wafer.

Abstract: The present invention provides a method for processing a semiconductor device wherein a dielectric layer is partially converted into a silicon-oxy-nitride by incorporation of nitrogen atoms into the dielectric layer, which comprises a silicon oxide. Before the introduction of the nitrogen atoms into the dielectric layer, the dielectric layer is provided as a silicon oxide in which the atomic silicon to oxygen ration is greater than ½. In this way, MOS transistors are obtained with a high quality interface between the dielectric region and semiconductor substrate, and a dielectric region which is impermeable to impurity atoms from the gate region and which has a thickness which is substantially equal to the dielectric layer as deposited.

Abstract: A method of stabilizing a poly(paraxylylene) dielectric thin film after forming the dielectric thin film via transport polymerization is disclosed, wherein the method includes annealing the dielectric thin film under at least one of a reductive atmosphere and a vacuum at a temperature above a reversible solid phase transition temperature of the dielectric film to convert the film from a lower temperature phase to a higher temperature phase, and cooling the dielectric thin film at a sufficient rate to a temperature below the solid phase transition temperature of the dielectric thin film to trap substantial portions of the film in the higher temperature phase.

Abstract: Provided is a process for manufacturing an insulating film for a semiconductor device. The process includes preparing a composition for forming an insulating film, wherein the composition comprises a) an organosilicate polymer and b) an organic solvent. The composition is coated on a substrate of a semiconductor device to prepare a coated insulating film, and the coated insulated film is dried and cured. Also provided are an insulating film prepared as described as well as a semiconductor device comprising the insulating film.

Abstract: High density oxide films are deposited by a pulsed-DC, biased, reactive sputtering process from a titanium containing target to form high quality titanium containing oxide films. A method of forming a titanium based layer or film according to the present invention includes depositing a layer of titanium containing oxide by pulsed-DC, biased reactive sputtering process on a substrate. In some embodiments, the layer is TiO2. In some embodiments, the layer is a sub-oxide of Titanium. In some embodiments, the layer is TixOy wherein x is between about 1 and about 4 and y is between about 1 and about 7. In some embodiments, the layer can be doped with one or more rare-earth ions. Such layers are useful in energy and charge storage, and energy conversion technologies.

Abstract: The present invention relates to a deposition method of a low dielectric constant insulating film, which comprises the steps of generating a first deposition gas containing at least one silicon source selecting from the group consisting of silicon containing organic compound having siloxane bond and silicon containing organic compound having CH3 group, and an oxidizing agent consisting of oxygen containing organic compound having alkoxyl group (OR: O is oxygen and R is CH3 or C2H5), and applying electric power to the first deposition gas to generate plasma and then causing reaction to form a low dielectric constant insulating film on a substrate.

Abstract: A seat cushion or other resilient structure includes a foam inner core combined with layers of varying density fiber batts to impart desirable comfort characteristics, support features and durability thereto. In one embodiment, the foam core is positioned between intermediate layers of low loft fiber batts of relatively high densities. In turn, the intermediate batts are sandwiched between outer high loft fiber batts having relatively low densities. Alternately, the foam core comprises one or more intermediate layers of relatively high density fiber batts that are positioned within the foam core to create one or more fiber batt subcores. The outer high loft fiber batts sandwich the foam core comprising the fiber batt subcores to create the resilient structure.

Abstract: Composite material (10) comprises a substrate (1) and a chemically, mechanically, physically, catalytically and/or optically functional titanium oxide layer (2), applied on at least one side thereof. A titanium oxide layer (2) is deposited on the substrate (1) as a base layer (3), made from TiOx with an oxygen content of 0.7?x<2, or made from TiOx(OH)y with an oxygen content of 0.5?x<2 and a hydroxide content of 0?y<0.7 and an upper layer (4) of amorphous and/or crystalline TiO2 applied to said base layer (3). In a first method variation, firstly a base layer (3) of TiOx with an oxygen content of 0.7?×<2 is reactively or non-reactively deposited, then, through an increase in the oxygen content, the process pressure, the capacity and/or the substrate temperature, an upper layer (4) of amorphous and/or crystalline TiO2 is deposited. In a second method variation, firstly a base layer (3) of TiOx with an oxygen content of 0.

Abstract: The present invention provides an electromagnetic wave shielding material including a three dimensionally knitted base material and a conductive metal layer formed on the three dimensionally knitted base material, which shielding material is characterized in that it comprises: a heat-fusing thread used at at least a portion of the three dimensionally knitted base material; and a portion in which connection thread is not present, wherein the amount of cutting debris generated at the time of cutting is decreased. According to the present invention, an electromagnetic wave shielding material, which is used for an electromagnetic wave shielding gasket for shielding electromagnetic wave, exhibits good workability if the thickness of the product is relatively thin, suppresses the metal separation and reduces the amount of cutting debris generated at the time of cutting, is obtained.

Abstract: The present invention relates to a multi density fiber seat back for furniture seating systems. The multi density fiber seat back comprises an inner core of a firmer fiber batt and outer fiber batts which are relatively soft. One of the outer softer fiber batts is positioned against the front of the seat back frame and the other outer fiber batt is toward the seating area of the furniture seating system. The outer softer fiber back proximate the seating area imparts a oft plush feel to the touch. The firmer fiber batt core provides back support to one seated on the furniture and ease in raising oneself up from a seated position, as well are providing vertical stability to the multi density fiber back. The outer softer fiber batt proximate the front of the seat back frame provides a sense of reclining as it is compressed.

Abstract: A multiple component spunbond web is provided in which the spunbond fibers are polymeric sheath-core fibers with a sheath made of a blend of polyethylene and an acid copolymer and a polyester or polyamide core. The spunbond webs can be thermally bonded have an improved combination of strength, softness, and heat sealability and can be used to prepare multi-layer composite sheets including spunbond-meltblown-spunbond fabrics suitable for use in medical garments and other end uses.

Abstract: A glass manufacturing system is described herein that has a forming device (e.g., isopipe) which is made from a zircon refractory material that has an improved creep resistance property. The zircon refractory material has a composition with at least the following elements: ZrSiO4 (98.75–99.68 wt %); ZrO2 (0.01–0.15 wt %); TiO2 (0.23–0.50 wt %); and Fe2O3 (0.08–0.60 wt %).

Abstract: A method is disclosed for modifying a catalytic molecular sieve for shape-selective hydrocarbon conversions comprises: a) selectivating said catalytic molecular sieve by contacting with a silicon-containing selectivating agent; and b) calcining the selectivated catalytic molecular sieve at high temperature calcination conditions comprising temperatures greater than 700° C., which conditions are sufficient to reduce acid activity as measured by alpha value and increase diffusion barrier of said catalytic molecular sieve as measured by the rate of 2,3-dimethylbutane uptake, as compared to the selectivated catalyst. Catalytic molecular sieves thus prepared, such as silica-bound ZSM-5, and their use in hydrocarbon conversion processes such as aromatics isomerization, e.g., xylene isomerization, ethylbenzene conversion and aromatics disproportionation, e.g., toluene disproportionation are also disclosed.

Abstract: The invention provides a process for producing an olefin polymerization catalyst comprising a catalyst component formed by contacting at least (a) a compound of Group 1 to 3 of the Periodic Table (IUPAC) with (b) a transition metal compound of Group 4 to 10 of the Periodic Table (IUPAC) or a compound of an actinide or lanthanide, in the form of solid catalyst particles, said process comprising: (1) preparing a solution from said compounds; (2) dispersing said solution to a solvent immiscible therewith and inert in relation to said compounds, to obtain an emulsion in which said solution forms the dispersed phase; and (3) solidifying the catalyst component in the dispersed droplets.

Abstract: The alkylhalosilanes are directly synthesized while diminishing the formation of coke by reacting an alkyl halide with silicon in the presence of a catalytically effective amount of (?) a copper metal or a copper-based compound catalyst and (?) a catalyst promoter intermixture therefor which comprises an effective minor amount of an additive ?1 selected from the group consisting of tin, a tin-based compound and mixture thereof, optionally, an effective minor amount of an additive ?2 selected from the group consisting of zinc metal, a zinc-based compound and mixture thereof, an effective minor amount of an additive ?3 selected from the group consisting of cesium, potassium and rubidium, and compound and mixture thereof, and, optionally, an effective minor amount of an additive ?4 selected from the group consisting of the element phosphorus, a phosphorus-based compound and mixture thereof.

Abstract: An oxygen storage material based on cerium oxide with at least one other oxide of the metals silicon and zirconium, wherein the cerium oxide and the other oxides are present in the form of a mixed oxide. The material is obtainable in that hydroxidic precursors of the mixed oxide are first prepared in a manner known per se using a wet-chemical route, these precursors are optionally dried at temperatures between 80 and 300° C. and the dried precursors are then treated under a hydrogen-containing atmosphere at a temperature between 600 and 900° C. for a period of 1 to 10 hours. The reductive thermal treatment endows the material with a greatly improved dynamic behavior as compared with conventional calcination in air.

Abstract: The present invention provides a catalyst for use in a NOx trap that has reduced NOx release during rich purges, increased NO conversion efficiency under stoichiometric conditions, and improved sulfur tolerance. The catalyst of this embodiment includes a precious metal, an oxygen storage component in contact with the precious metal, and a NOx storage material. The oxygen storage component in contact with the precious metal is present in an amount that provides sufficient oxygen storage capacity to reduce the NOx release from the NOx trap during rich purges to less than 20% of the NOx that is stored in the NOx trap across the operating temperature window of the NOx trap, increase the NOx conversion efficiency under stoichiometric conditions to a value greater than 70%, and increase the sulfur tolerance of the NOx trap.

Abstract: A catalyst for reducing the nitrous oxide content in gas, which operates at relatively low temperatures, the activity of which is relatively insensitive to the presence of water vapor and which is highly resistant to hydrothermal degradation, is prepared from ferrierite exchanged with iron. Application to the treatment of gases with a low N2O content, such as gases resulting from plants for the manufacture of nitric acid, and of gases with a high N2O content, which are emitted during oxidations of organic compounds by nitric acid.

Abstract: The reversible thermosensitive recording medium according to the present invention comprises a support, a thermosensitive layer and a protective layer in order, the thermosensitive layer comprises an electron-donating coloring compound and an electron-accepting compound and reversibly changes the color depending on temperatures, and the protective layer comprises a reactive heterocyclic compound, and inorganic fine particles of which surface is at least partially treated into hydrophobic, alternatively the protective layer comprises inorganic fine particles of which number-average particle size is 100 nm or less and of which surface is at least partially coated with organic silane compounds.

Abstract: A laminated body for printing with a temporary display layer is configured so that the temporary display layer capable of being peeled, which includes at least one layer capable of printing and displaying, and a substrate layer including at least one layer are laminated. A surface side of the temporary display layer that does not contact with the substrate layer has a property of absorbing ink that contains a sublimable dye and includes a resin composition that does not generate a blocking phenomenon during a heat treatment for sublimating the sublimable dye to diffuse into the substrate layer and to dye the substrate layer. This laminated body allows the dye in the temporary display layer to sublimate by the application of heat so as to print an image in the substrate layer. By peeling the temporary display layer, original display can be presented with excellent long term durability and dimensional stability against heat.

Abstract: A laminate for printing for coloring a resin layer by allowing a sublimable dyeing agent to permeate into the inside of the resin layer through heating, which comprises, in the order from the surface, a surface resin layer A(1) having a weak affinity with the sublimable dyeing agent and allowing the dyeing agent to pass through it and a coloring resin layer B(12) having strong affinity with the dyeing agent and preventing the transfer of the dyeing agent; and a printing method and a printed mater using the lamainate. The laminate for printing has, formed as an inner layer, a coloring resin layer having strong affinity with a sublimable dyeing agent and capable of preventing the transfer of the dyeing agent, which allows the prevention of the transfer of a sublimable dyeing agent having been printed.

Abstract: The present invention relates to a surfactant system for general use in agricultural compositions, including, but not limited to herbicidal, fungicidal and insecticidal formulations comprised of two components: an alkoxylated polyarylphenol phosphate ester surfactant in combination with an alkoxylated lignosulfonate salt surfactant.

Abstract: A method for using an invert emulsion fluid in a well bore, comprising placing an invert emulsion fluid in a well bore, wherein the invert emulsion fluid comprises an oleaginous fluid, a non-oleaginous fluid and an emulsifier comprising one or more amines generally represented by the formula: wherein R is a radical selected from the group consisting of abietyl, hydroabietyl, dihydroabietyl, tetrahydroabietyl, and dehydroabietyl, each R? may be the same or different and is an alkyl having from about 1 to about 3 carbons, each A may be the same or different and is NH or O, and the sum of x and y ranges from about 1 to about 20, and contacting the invert emulsion fluid with an acid solution to reversibly convert the invert emulsion to an oil-in-water emulsion.

Abstract: The present invention relates to a method and to a fluid for drilling or workover in a well running through a porous permeable formation, wherein a water-based well fluid circulates in said well. In the method, at most 3% by weight of a composition obtained from fat, or an oil, and an alcohol, is added to the fluid in addition to the conventional constituents for such a fluid, the chain lengths of the acid and alcohol parts being chosen such that the ester thus obtained has sufficient dispersion in water, compatibility with said constituents, does not form an emulsion with the reservoir oil and adsorbs sufficiently on the porous formation.

Abstract: Viscoelastic surfactant based aqueous fluid systems useful as thickening agents in various applications, e.g. to suspend particles produced during the excavation of geologic formations. The surfactants are zwitterionic/amphoteric surfactants such as dihydroxyl alkyl glycinate, alkyl ampho acetate or propionate, alkyl betaine, alkyl amidopropyl betaine and alkylimino mono- or di-propionates derived from certain waxes, fats and oils. The thickening agent is used in conjunction with an inorganic water-soluble salt or organic additive such as phthalic acid, salicylic acid or their salts.

Abstract: A powder composition comprising viscoelastic surfactant forms, in aqueous solution, a viscoelastic wellbore treatment fluid.

Abstract: A composition of matter comprising an amine acylated with a hydrocarbyl group substituted carboxylic acylating agent containing an average of from 1.3 to 1.6 groups derived from ?,?-unsaturated carboxylic compounds per Mn of the hydrocarbyl group, wherein the hydrocarbyl group has Mn determined by GPC ranging from 1500 to 3000, the amine comprises polyamine bottoms and said acylated amine has total base number (TBN) ranging from 17 to 35. A method for preparing the composition, lubricating oils containing the composition and, in another embodiment, lubricating oil compositions of this invention further comprising a metal overbased sulfonate detergent.

Abstract: The invention relates to a process for preparing an overbased metal detergent in an oil medium comprising the steps of: (1) providing a metal salt selected from the group consisting of a hydrocarbyl-substituted organic acid; a hydrocarbyl-substituted phenol, a phenate, a hydrocarbyl-substituted carboxylate and mixtures thereof; (2) further providing methanol and a mixture of alcohols containing 2 to about 7 carbon atoms, wherein the mole ratio of methanol to the mixture of alcohols is about 2.

Abstract: The invention provides personal care compositions comprising both alkyl phosphate surfactants and selected auxiliary agent/acid. By using specific auxiliary agent whose pKa is higher than that of the alkyl phosphate surfactants, particularly in specific ratios, it is possible to prepare milder compositions.