Abstract: A new and distinct variety of Loropetalum that possesses unique color and growth habit.

Abstract: A new and distinct cultivar of New Guinea Impatiens plant named ‘Kibahia’, characterized by its upright, outwardly spreading and mounded plant habit; freely branching habit; dense and bushy growth habit; dark green and yellow green variegated leaves; freely flowering habit; and large violet pink and red purple-colored flowers that are positioned above and beyond the foliage.

Abstract: A new and distinct cultivar of Ivy Geranium plant named ‘Pacharvel’, characterized by its upright, outwardly spreading and trailing plant habit; vigorous growth habit; freely basal branching habit; large, single and bright red-colored flowers; and good garden performance.

Abstract: A new garden rose plant of the shrub class which has abundant, yellow flowers and attractive foliage. This new and distinct variety has shown to be uniform and stable in the resulting generations from asexual propagation.

Abstract: A new and distinct cultivar of Kalanchoe plant named ‘Arina’, characterized by its compact, upright and freely branching plant habit; relatively small dark green-colored leaves; dark orange-colored single flowers; and excellent postproduction longevity.

Abstract: A new and distinct cultivar of Antirrhinum plant named ‘Sunkisupapu’, characterized by its upright and mounded plant habit; freely branching habit and short internodes; dense and bushy plant form; numerous red purple-colored flowers; and long flowering period.

Abstract: A new and distinct cultivar of Antirrhinum plant named ‘Sunkisupin’, characterized by its upright and mounded plant habit; freely branching habit and short internodes; dense and bushy plant form; numerous dark pink-colored flowers; and long flowering period.

Abstract: A new and distinct cultivar of New Guinea Impatiens plant named ‘KIE344’, characterized by its upright, outwardly spreading and mounded plant habit; freely branching habit; dense and bushy growth habit; dark green-colored leaves; freely flowering habit; and large red purple-colored flowers that are positioned above and beyond the foliage.

Abstract: A new and distinct cultivar of Argyranthemum plant named ‘Wesaryel’, characterized by its compact, uniform, outwardly spreading and mounded plant habit; freely branching and vigorous growth habit; dark green-colored foliage; freely flowering habit; and daisy-type inflorescences with bright yellow-colored ray florets.

Abstract: A new and distinct cultivar of Hydrangea plant named ‘Maltisse’, characterized by its upright and mounded plant habit; strong roots and stems; flowering during first year of production; and large inflorescences with red purple-colored flowers.

Abstract: A new and distinct cultivar of Phlox plant named ‘Sunphloburu’, characterized by its compact and mounding plant habit; vigorous growth habit; freely branching habit; light purple-colored flowers with dark purple-colored central star; freely and continuous flowering habit; and good garden performance.

Abstract: ‘DCMP01’ is a distinctive variety of Dianella caerulea which is characterized by the combination of its dense growth, slightly spreading and compact growth habit, purple-blue flower color, and short canes with very short internodes, which is unusual for a Dianella caerulea, particularly when compared to the ‘Sydney Ecotype’. In addition, ‘DCMP01’ is less prone to falling over than the parent type.

Abstract: A new and distinct Chrysanthemum plant named ‘Danat2l4’ characterized by having inflorescence with oblong shaped, yellow ray florets, and bell shaped, yellow disc florets; flowering time of 7.5 weeks; short day plant; and vigorous growth habit.

Abstract: ‘DRG04’ is a distinctive variety of Dianella revoluta, which is characterized by the combination of a dense compact clumping habit with red basal shoots and a slight weeping of clumps with age. ‘DRG04’ is further characterized by its glaucous leaves, which result in a two-toned leaf color when viewed from a distance, with a glossy green upper side leaf color and a dull green (slightly blue-toned) lower side leaf color. When observed up-close the leaves are a yellow-green. ‘DRG04’ is also distinguished by the ability to be easily and productively propagated by division.

Abstract: ‘SAVamoon’ is a new and distinct variety of mini-flora rose plant with a very pale violet-lavender to near white, fully double flower having a very strong fragrance. Blooms are borne primarily singly and serve well as cut flowers. There is little change in the color of the petals as the flower opens and ages. ‘SAVamoon’ serves well as a perennial or large container plant.

Abstract: A new and distinct variety of Lagerstroemia (indica×fauriei) plant named ‘Trured’, characterized by its large, upright, dense and globose growth habit, fast growth rate, large panicles of deep red flowers and its long bloom period.

Abstract: A new Aubrieta plant, characterized particularly as to novelty by the purple flowers, the early flowering and the strong dentation of the leaves.

Abstract: This invention relates to a new and distinct cultivar of strawberry plant named ‘DrisStrawOne’. The new cultivar is primarily characterized by its relatively small plant size, medium fruit size and heavy fruit production.

Abstract: The Wheeling' avocado, which is a result of cross-pollination of the ‘Monroe’ and the ‘Brooks Late’ varieties, is of medium size, average 12-16 ounces and being about 4.75 inches in length, and has overall good eating qualities. The fruit matures and can be picked in February to early March. The fruit is an ovate berry that has a hard shelled, smooth textured, exocarp that is dark green.

Abstract: Pressure swing adsorption (PSA) separation of a gas mixture is performed in an apparatus with a plurality of adsorbent beds. The invention provides rotary multiport distributor valves to control the timing sequence of the PSA cycle steps between the beds, with flow controls cooperating with the rotary distributor valves to control the volume rates of gas flows to and from the adsorbent beds in blowdown, purge, equalization and repressurization steps.

Abstract: A new method of patterning the polysilicon layer in the manufacture of an integrated circuit device has been achieved. A polysilicon layer is provided overlying a semiconductor substrate. The polysilicon layer may overlie a gate oxide layer and thereby comprise the polysilicon gate for MOS devices. A hard mask layer is provided overlying the polysilicon layer. A resist layer is provided overlying the hard mask layer. The resist layer is patterned to form a resist mask the exposes a part of the hard mask layer. The polysilicon layer is patterned in a plasma dry etching chamber. First, the resist layer is optionally trimmed by etching. Second, the hard mask layer is etched where exposed by the resist mask to form a hard mask that exposes a part of the polysilicon layer. Third, the resist mask is stripped away. Fourth, polymer residue from the resist mask is cleaned away using a chemistry containing CF4 gas. Fifth, the polysilicon layer is etched where exposed by the hard mask.

Abstract: A method and apparatus for controlling implantation during vacuum fluctuations along a beam line. Vacuum fluctuations may be detected based on a detected beam current and/or may be compensated for without measuring pressure in an implantation chamber. A reference level for an ion beam current can determined and a difference between the reference value and the measured ion beam current can be used to control parameters of the ion implantation process, such as a wafer scan rate. The difference value can also be scaled to account for two types of charge exchanging collisions that result in a decrease in detected beam current. A first type of collision, a non-line of sight collision, causes a decrease in detected beam current, and also a decrease in the total dose delivered to a semiconductor wafer. A second type of collision, a line of sight collision, causes a decrease in detected beam current, but does not affect a total dose delivered to the wafer.

Abstract: Methods and apparatus for implanting ions in a workpiece, such as a semiconductor wafer, include generating an ion beam, measuring parallelism of the ion beam, adjusting the ion beam for a desired parallelism based on the measured parallelism, measuring a beam direction of the adjusted ion beam, orienting a workpiece at an implant angle referenced to the measured beam direction and performing an implant with the workpiece oriented at the implant angle referenced to the measured beam direction. The implant may be performed with a high degree of beam parallelism.

Abstract: A juvenile vehicle seat is provided including a cup holder. The cup holder is movable between a retracted position adjacent the seat and an extended position spaced from the seat.

Abstract: A programmable input/output device for use with a programmable logic device (PLD) is presented comprising an input buffer, an output buffer and programmable elements. The programmable elements may be programmed to select a logic standard for the input/output device to operate at. For instance, a given set of Select Bits applied to the programmable elements may select TTL logic, in which case the input and output buffers would operate according to the voltage levels appropriate for TTL logic (e.g., 0.4 volts to 2.4 volts). For a different set of Select Bits, the GTL logic standard would be applied (e.g., 0.8 volts to 1.2 volts). The invention enables a single PLD to be used in conjunction with various types of external circuitry.