Abstract: Methods for detecting agents or drugs which inhibit or promote an activity of sphingosine kinase type 2 isoform involving providing a recombinant DNA construct into a cell such that sphingosine kinase type 2 isoform is produced in the cell, adding at least one drug or agent to the cell, and detecting whether or not the drug or agent inhibits or promotes an activity of sphingosine kinase type 2 isoform by measuring sphingosine kinase-depedendent phosphorylation of lipids in the cell and comparing the resultant measurement to a control which did not receive the drug or agent, wherein a decrease in the amount of sphingosine kinase-dependent phosphorylation of the lipids as compared to the control indicates an inhibitory drug or agent, or an increase in the amount of sphingosine kinase-dependent phosphorylation of the lipids in the cell as compared to the control indicates a stimulatory drug or agent.

Abstract: The invention relates to a method of identifying herbicides and to the use of inhibitors of plant peptide deformylase as broad spectrum herbicides.

Abstract: A mutant virus contains a mutation at a phosphorylation site in one or more viral proteins, which attenuates the virus, and an improved vaccine composition. The invention also relates to methods of inducing an immune response, and protecting mammals from infection by rabies virus. Also included are methods of producing the mutant virus and mutant viral proteins, including producing the mutant virus in a host cell which produces or-overproduces a wild-type counterpart of the mutant viral protein, which complements the other viral proteins such that production of the mutant viral particle is optimized. The invention also includes those host cells, vaccine compositions including the viral proteins,-alone or in combination with-intact virus, and methods of inducing an immune response or protecting a mammal from infection. Also included are vectors suitable for delivering a gene to a cell of a human or animal, and methods of delivery thereof.

Abstract: The present invention provides methods of purifying adeno-associated virus (AAV) particles. These AAV particles include AAV2, AAV4 and AAV5 particles. The present invention also provides AAV particles purified by the methods of the present invention.

Abstract: The present invention provides an organic conductor comprising a deoxyribonucleic acid (DNA) and an electric charge-donating material bonded to the deoxyribonucleic acid, and an organic conductor comprising at least two DNAs; and an electric charge-transfer substance bonding to each base of the two DNAs.

Abstract: Apparatus for cell culture occupying little space, providing economical efficiency, reducing working labor, faulty manipulation, and promoting the prevention of contamination, which is suitable for small scale cell culture . The apparatus permits the execution of at least a medium replacement process and a passage culture process, and includes an aspirator unit for drawing a liquid, a chemical liquid supply unit for supplying a medium, a liquid for detachment, a washing liquid, a pipetting unit for quantitatively aspirating and discharging the liquid, a centrifugal unit for separating cells from the cell suspension in a centrifuge tube, and a handling unit for moving a culture vessel and the centrifuge tube to each unit. All units being constructed for storage in a clean bench. The apparatus may include a clean bench having a sterile operation space, and the aforementioned units may be removably stored within the sterile operation space.

Abstract: The invention provides a biologically active substance transfer sheet which can be formed with simple steps, a cell culture kit which comprises a cell culture plate and a biologically active substance transfer sheet, a producing method therefor, and a method for screening cell culture conditions with cells. The transfer sheet is prepared by providing biologically active substances having biological activity in plural areas on a sheet base, and biologically active substances are supplied from the sheet to culture regions provided on the plate.

Abstract: The present invention relates to an apparatus for conducting a variety of assays for the determination of analytes in liquid samples, and relates to the methods for such assays. In particular, the invention relates to a single-use cartridge designed to be adaptable to a variety of real-time assay protocols, preferably assays for the determination of analytes in biological samples using immunosensors or other ligand/ligand receptor-based biosensor embodiments. The cartridge provides novel features for processing a metered portion of a sample, for precise and flexible control of the movement of a sample or second fluid within the cartridge, for the amending of solutions with additional compounds during an assay, and for the construction of immunosensors capable of adaptation to diverse analyte measurements.

Abstract: Embodiments of the invention are directed to a device that combines microfabrication, microfluidic, and surface micropatterning techniques to create a multi-compartment neuronal culturing device that has application across a number of different neuroscience uses. Devices configured in accordance with the invention allow directed growth of neurites and isolation of neurites from their cell bodies. The device can use hydrostatic pressure to isolate insults to one compartment and, thus, expose localized areas of neurons to insults. Due to the high resistance of the microgrooves for fluid transport, insults are contained in the neuritic compartment without appreciable leakage into the somal compartment for a certain period of time (e.g., over 15 h).

Abstract: A device for monitoring leukocyte migration is provided. The invention also provides a method of using the device to monitor leukocyte migration in the presence of physiological shear flow and therefore simulate physiological conditions of a blood vessel in vivo. The invention further provides a method of using the device to high-throughput screen a plurality of test agents. The present invention further provides a flexible assay system and numerous assays that can be used to test biological interactions and systems. Laminar flow gradients are employed that mimic gradient situations present in vivo.

Abstract: The invention provides BASB006 polypeptides and polynucleotides encoding BASB006 polypeptides and methods for producing such polypeptides by recombinant techniques. Also provided are diagnostic, prophylactic and therapeutic uses.

Abstract: During the growth and study of NSCs, a range of molecules present on the surface of multipotent neural stem and progenitor cells (NSCs) were identified. These markers were identified using a number of human and murine neural stem cell lines, including retinal stem cells (RSCs). The NSC-specific markers identified included gene products as well as non-protein molecules and sugar epitopes not directly coded in the genome. Together with surface markers which were determined to be absent from the surface of hNSCs, the molecules described herein provide a means to enrich for neural stem cells, or neural progenitor subpopulations, particularly using combinatorial cell sorting strategies. These same molecules also represent targets for pharmacological manipulation of NSC populations and subpopulations, both in vivo and ex vivo.

Abstract: In a preferred embodiment, the present invention relates to a Schwannoma cell line derived from a Schwann tumor in a patient with Neurofibromatosis type 2 (NF2) and immortalized with HPV E6-E7 genes. The cell line has a unique splice site mutation of the NF2 gene. The immortalized cell line is non-tumorigenic but has altered growth properties such as higher proliferation rate and independence of Schwann cell growth factors. Methods of using this unique cell line for pharmacologic screening are disclosed.

Abstract: Genomic instability in T-antigen expressing cells can be overcome by modifying the gene expressing T-antigen so that it lacks Bub1 binding. Stable cell lines can be produced by incorporation of the modified T-antigen gene, preferably together with the catalytic sub-unit of the telomerase construct.

Abstract: The present invention is directed generally to activating gene expression or causing over-expression of a gene by recombination methods in situ. The invention also is directed generally to methods for expressing an endogenous gene in a cell at levels higher than those normally found in the cell. In one embodiment of the invention, expression of an endogenous gene is activated or increased following integration into the cell, by non-homologous or illegitimate recombination, of a regulatory sequence that activates expression of the gene. The invention also provides methods for the identification, activation, isolation, and/or expression of genes undiscoverable by current methods since no target sequence is necessary for integration. The invention is specifically directed to methods of drug discovery using the activated gene products for compound testing.

Abstract: The present invention provides a vector system comprising a mutated post-transcriptional regulatory element. In particular, the present invention relates to a mutated WPRE sequence that can efficiently express nucleotides of interest in a retroviral vector system. The present invention also relates to methods of delivering and expressing nucleotides of interest to a target cell.

Abstract: A catalytic testing device comprising a reaction block comprising a set of reaction chambers, each chamber comprising a fluid inlet and outlet connected to an outgoing fluid duct connected to analysis means, fluid feed means capable of performing regulated dosing of flows of the fluid at the required pressure independently in each of the reaction chambers, automatic and dynamic pressure control means, capable of performing pressure regulation in each reaction chamber, which comprise a non-return valve in the outgoing fluid duct between the outlets of the reaction chambers and a common regulating tank that receives the outgoing fluid from the chambers, a pressure sensor provided in a first outlet duct and an automatic needle valve provided in a second outlet duct from the tank.

Abstract: A method for calibrating an analysis instrument, e.g., a gas chromatograph, for water analysis that includes four steps. The first step is to continuously remove water from a liquid that contains water to produce a liquid containing a reduced amount of water such as by membrane pervaporation. The second step is to analyze the liquid containing a reduced amount of water for water by a reference water analysis method such as by Karl Fischer titration. The third step is to analyze the stream of liquid containing a reduced amount of water using the instrument to be calibrated, e.g., a gas chromatograph having a helium photoionization pulse discharge detector. The fourth step is to calibrate the instrument using the analysis of the second step. In a related embodiment, a system for normal phase chromatography.

Abstract: Improvements in blood collection and testing. In one aspect, an improved method of manufacturing a blood collection tube, particularly illustrated for use in sedimentation rate testing, including providing an elongated glass tube with an open first end for receiving a venipuncture blood sample of at least 1 ml, formed with a closed end opposite the first end; and applying to a substantial portion of the receptacle a containment barrier. The improvements also pertain to resulting blood collection tubes, additives for blood collection tubes that permit reliable sedimentation test data after 8 hours from the blood draw, and methods of administering health care using the aforenoted tubes, additives or both.

Abstract: A method for determining the sequence of at least a portion of a single-stranded nucleic acid molecule by base-specifically labeling the exposed bases of the nucleic acid molecule using heavy element-substituted nucleotide bases which form Watson-Crick type base-pairs with the exposed bases of the nucleic acid molecule and then imaging the labeled single-stranded nucleic acid molecule using electron microscopy, e.g., transmission electron microscopy (TEM), or some other method that permits discrimination of the heavy element substituted nucleotide bases is described. The image is analyzed to determine the base sequence of at least a portion of the nucleic acid molecule.

Abstract: The present invention describes a novel, simplified method for detecting and monitoring whether the presence of nitrosylated proteins, such as S-nitrosoproteins, in a biological sample using fluorescence detection. The present invention further describes a method which can both quantify and identify the nature of nitrosylated proteins, which method is useful for monitoring both normal and disease states, in the development and screening of potential therapeutic drug species.

Abstract: A method for screening of compounds for binding differentiation at various drug target binding sites is used with a device measuring the enthalpy of reaction for the binding. The method includes merging test ligand with target compound and merging test ligand with target compound in the presence of at least one blocking agent. A first heat of reaction is detected for the merged test ligand and target compound solution and a second heat of reaction is detected for the merged test ligand and target compound solution in the presence of a blocking agent. The two heats of reaction are compared to determine whether a reaction has occurred.

Abstract: The present invention relates to a device (1) for observing reactions in samples (2), to which a reagent (3) is added, and/or a method which is based on the use of this device. The device includes at least one first optical device (4) for observing samples (2) in the direction of a first optical axis (5) and in a first observation region (6) penetrated by the first optical axis; a first device (7) for receiving receptacles (8) containing samples (2) and for aligning samples in these receptacles in relation to the first optical axis (5); and an injection device (10) for adding liquids (3) to samples (2) and an illumination device (17) for irradiating the samples (2) with excitation light of a first wavelength.

Abstract: A Pt film (24), a PLZT film (25), and a top electrode film (26) are formed above a semiconductor substrate (11). Next, the top electrode film (26) is patterned. Then, a PLZT film (27) covering an exposed portion of the PLZT film (25) is formed as an evaporation preventing film. Then, heat treatment is performed in an oxidative atmosphere to recover damage sustained to the PLZT film (25). Heat treatment is not performed between patterning of the top electrode film (26) and formation of the PLZT film (27). Thereafter, a ferroelectric capacitor is formed by patterning the PLZT film (25) and the Pt film (24).

Abstract: A method for one-way coupling an input signal to an integrated circuit on a semiconductor chip with the integrated circuit electrically isolated from the input signal comprises forming a MOS isolation coupler on the semiconductor chip by a CMOS process. The MOS isolation coupler comprises an inductor coil for generating a magnetic field in response to an input signal applied to terminals thereof. A MAGFET having a split drain formed by respective drain portions is formed on the semiconductor chip below the inductor coil, so that a current difference is induced between the drain currents in the drain portions which is proportional to the strength of the magnetic field generated by the inductor coil resulting from the input signal. The MAGFET is formed prior to the inductor coil. An oxide isolating layer is provided over the MAGFET, and the inductor coil is formed on the oxide layer.

Abstract: A device is provided with at least one light emitting device (LED) die mounted on a submount with an optical element subsequently thermally bonded to the LED die. The LED die is electrically coupled to the submount through contact bumps that have a higher temperature melting point than is used to thermally bond the optical element to the LED die. In one implementation, a single optical element is bonded to a plurality of LED dice that are mounted to the submount and the submount and the optical element have approximately the same coefficients of thermal expansion. Alternatively, a number of optical elements may be used. The optical element or LED die may be covered with a coating of wavelength converting material. In one implementation, the device is tested to determine the wavelengths produced and additional layers of the wavelength converting material are added until the desired wavelengths are produced.

Abstract: A method of manufacturing a semiconductor device includes (a) fixing a cover onto a semiconductor substrate so as to place a surface of the cover that includes a portion defining a first opening, face to face on a surface of the semiconductor substrate that includes an electrode and (b) applying an adhesive to the inside of the first opening.

Abstract: Microelectronic imagers and methods for packaging microelectronic imagers are disclosed herein. In one embodiment, a microelectronic imaging unit can include a microelectronic die, an image sensor, an integrated circuit electrically coupled to the image sensor, and a bond-pad electrically coupled to the integrated circuit. An electrically conductive through-wafer interconnect extends through the die and is in contact with the bond-pad. The interconnect can include a passage extending completely through the substrate and the bond-pad with conductive fill material at least partially disposed in the passage. An electrically conductive support member is carried by and projects from the bond-pad. A cover over the image sensor is coupled to the support member.

Abstract: A method of encapsulating a device is disclosed. Spacer particles are randomly located in a device region to prevent a cap mounted on the substrate from contacting the active components when pressure is applied to the cap, thereby protecting the active components from damage. The spacer particles comprise a base and an upper portion, the base being at least equal to or wider than the upper portion.

Abstract: A method of manufacturing a semiconductor probe having a resistive tip. The method includes forming first and second mask films having a rectangular shape on a silicon substrate, first etching an upper surface of the silicon substrate, forming a third mask film corresponding to a width of a tip neck by etching the first mask film, forming the width of the tip neck to a predetermined width by second etching of the silicon substrate using the third mask film as a mask, and forming a peak forming portion of the tip by annealing the silicon substrate after removing the third mask film. A semiconductor probe having a uniform height and tips having a uniform neck width can be manufactured.

Abstract: A CMOS active pixel sensor includes a silicon-on-insulator substrate having a silicon substrate with an insulator layer formed thereon and a top silicon layer formed on the insulator layer. A stacked pixel sensor cell includes a bottom photodiode fabricated on the silicon substrate, for sensing light of a longest wavelength; a middle photodiode fabricated on the silicon substrate, for sensing light of a medium wavelength, which is stacked above the bottom photodiode; and a top photodiode fabricated on the top silicon layer, for sensing light of a shorter wavelength, which is stacked above the middle and bottom photodiodes. Pixel transistor sets are fabricated on the top silicon layer and are associated with each pixel sensor cell by electrical connections which extend between each of the photodiodes and respective pixel transistor(s). CMOS control circuitry is fabricated adjacent to an array of active pixel sensor cells and electrically connected thereto.

Abstract: Methods of producing an electromechanical circuit element are described. A lower structure having lower support structures and a lower electrically conductive element is provided. A nanotube ribbon (or other electromechanically responsive element) is formed on an upper surface of the lower structure so as to contact the lower support structures. An upper structure is provided over the nanotube ribbon. The upper structure includes upper support structures and an upper electrically conductive element. In some arrangements, the upper and lower electrically conductive elements are in vertical alignment, but in some arrangements they are not.

Abstract: A method of fabricating an organic optoelectronic device having a bulk heterojunction comprises the steps of: depositing a first layer over a first electrode by organic vapor phase deposition, wherein the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer, wherein the interface of the second layer on the first layer forms a bulk heterojunction; and depositing a second electrode over the second layer to form the optoelectronic device. In another embodiment, a first layer having protrusions is deposited over the first electrode, wherein the first layer comprises a first organic small molecule material. For example, when the first layer is an electron donor layer, the first electrode is an anode, the second layer is an electron acceptor layer, and the second electrode is a cathode.

Abstract: A method for forming a metal interconnection of a semiconductor device avoids over-etching and under-etching through the use of the “self-stop” function of a nitridation layer, to prevent the occurrence of openings and voids in a copper interconnection and to obtain a constant trench depth.

Abstract: Provided are compounds having a thiol group as an anchoring group introduced into a Rose Bengal molecule, a method of producing the compound, an electronic device comprising the compound immobilized on an electrode by a self-assembling method, and a method of manufacturing the electronic device. The compound has the following formula: wherein R is an unsaturated or saturated C2-C20 hydrocarbon group. The compound can provide switch/memory properties and form a single molecular layer by self-assembling when manufacturing a molecular electronic device.

Abstract: The present invention provides a method for production of a single electron semiconductor element (SET) in which a quantum dot is selectively arranged in a nano gap between fine electrodes, whereby the product yield is significantly improved, leading to excellent practical applicability. The method for production of SET of the present invention is characterized in that a solution containing ferritin including a metal or semiconductor particle therein, and a nonionic surfactant is dropped on a substrate having a source electrode and a drain electrode formed by laminating a titanium film and a film of a metal other than titanium, whereby the ferritin is selectively arranged in a nano gap between the source electrode/drain electrode.

Abstract: A method of manufacturing a coreless packaging substrate is disclosed. The method can produce a coreless packaging substrate which comprises: at least a built-up structure having a first solder mask and a second solder mask, wherein a plurality of openings are formed in the first and second solder mask to expose the conductive pads of the built-up structure; and a plurality of solder bumps as well as solder layers formed on the conductive pads. Therefore, the invention can produce the coreless packaging substrate with high density of circuit layout, less manufacturing steps, and small size.

Abstract: A method of making a semiconductor chip assembly includes providing a metal base, a routing line, a metal containment wall and a solder layer in which the metal containment wall includes a cavity and the solder terminal contacts the metal containment wall in the cavity, mechanically attaching a semiconductor chip to the routing line, forming a connection joint that electrically connects the routing line and the pad, etching the metal base to reduce contact area between the metal base and the routing line and between the metal base and the metal containment wall, and providing a solder terminal that includes the solder layer.

Abstract: Low temperature processed back side redistribution lines (RDLs) are disclosed. Low temperature processed back side RDLs may be electrically connected to the active surface devices of a semiconductor substrate using through wafer interconnects (TWIs). The TWIs may be formed prior to forming the RDLs, after forming the RDLs, or substantially simultaneously to forming the RDLs. The material for the back side RDLs and various other associated materials, such as dielectrics and conductive via filler materials, are processed at temperatures sufficiently low so as to not damage the semiconductor devices or associated components contained on the active surface of the semiconductor substrate. The low temperature processed back side RDLs of the present invention may be employed with optically interactive semiconductor devices and semiconductor memory devices, among many others. Semiconductor devices employing the RDLs of the present invention may be stacked and electrically connected theretogether.

Abstract: A package includes a sensor die with a micro component, such as a MEMS device, coupled to an integrated circuit which may include, for example, CMOS circuitry, and one or more electrically conductive bond pads near the periphery of the sensor die. A semiconductor cap structure is attached to the sensor die. The front side of the cap structure is attached to the sensor die by a seal ring to hermetically encapsulate an area of the sensor die where the micro component is located. The bond pads on the sensor die are located outside the area encapsulated by the seal ring. Electrical leads, which extend along outer side edges of the semiconductor cap structure from its front side to its back side, are coupled to the micro component via the bond pads.

Abstract: The invention provides methods for packaging for electronic devices that are light or other radiation-sensitive, such as image sensors including CCD or CMOS chips. In one embodiment of the invention, an image sensor package is assembled by surrounding a chip with a barrier of transfer mold compound and covering the chip with a transparent lid. In another embodiment of the invention, the perimeter area of a chip, including interconnections such as wire bonds and bond pads, is encapsulated with a liquid dispensed epoxy, and a transparent lid is attached. In yet another embodiment of the invention, chip encapsulation is accomplished with a unitary shell of entirely transparent material. In yet another embodiment of the invention, a substrate-mounted chip and a transparent lid are loaded into a transfer mold that holds them in optimal alignment.

Abstract: A method and apparatus for making reliable miniature semiconductor packages having a reduced height and footprint is provided. The package includes a semiconductor chip having an active surface and a non-active surface and one or more contacts positioned adjacent the semiconductor chip. Electrical connections are formed between the contacts and the semiconductor chip. An adhesive tape provided adjacent the non-active surface of the semiconductor chip and the one or more contacts positioned adjacent the semiconductor chip. An adhesive material provided between the non-active surface of the chip and the adhesive tape.

Abstract: An integrated circuit device is provided including an integrated circuit substrate having a fuse region. A window layer is provided on the integrated circuit substrate that defines a fuse region. The window layer is positioned at an upper portion of the integrated circuit device and recessed beneath a surface of the integrated circuit device. A buffer pattern is provided between the integrated circuit substrate and the window layer and a fuse pattern is provided between the buffer pattern and the window layer. Methods of forming integrated circuit devices are also described.

Abstract: Discloses are a method for manufacturing a field effect transistor comprising a channel consisting of silicon fins and a silicon body, in which the silicon fins have an orientation different from the silicon body, as well as a transistor structure manufactured thereby.

Abstract: A recessed-gate thin-film transistor (RG-TFT) with a self-aligned lightly doped drain (LDD) is provided, along with a corresponding fabrication method. The method deposits an insulator overlying a substrate and etches a trench in the insulator. The trench has a bottom and sidewalls. An active silicon (Si) layer is formed overlying the insulator and trench, with a gate oxide layer over the active Si layer. A recessed gate electrode is then formed in the trench. The TFT is doped and LDD regions are formed in the active Si layer overlying the trench sidewalls. The LDD regions have a length that extends from a top of the trench sidewall, to the trench bottom, with a doping density that decreases in response to the LDD length. Alternately stated, the LDD length is directly related to the depth of the trench.

Abstract: Provided are methods for fabricating semiconductor devices incorporating a fin-FET structure that provides body-bias control, exhibits some characteristic advantages associated with SOI structures, provides increased operating current and/or reduced contact resistance. The methods for fabricating semiconductor devices include forming insulating spacers on the sidewalls of a protruding portion of a first insulation film; forming a second trench by removing exposed regions of the semiconductor substrate using the insulating spacers as an etch mask, and thus forming fins in contact with and supported by the first insulation film. After forming the fins, a third insulation film is formed to fill the second trench and support the fins. A portion of the first insulation film is then removed to open a space between the fins in which additional structures including gate dielectrics, gate electrodes and additional contact, insulating and storage node structures may be formed.

Abstract: A crystalline semiconductor having an even surface and a large crystal grain size is formed on an economical glass substrate using a laser crystallizing technology. A series of processes, including forming an insulation film on a glass substrate; forming a semiconductor film in the first layer; crystallizing the semiconductor film in the first layer by irradiating laser light stepwise from weak energy laser light to strong energy laser light; forming a semiconductor film in a second layer having a film thickness thinner than that of the semiconductor film in the first layer; performing laser crystallization of the semiconductor thin film in the second layer by irradiating laser light stepwise from weak energy laser light to strong energy laser light, are continuously performed without exposing the workpiece to the atmosphere.

Abstract: To form a polycrystalline silicon film having a grain size of 1 ?m or greater by means of laser annealing. A beam emitted from a laser apparatus (101) is split in two by a half mirror. The split beams are processed into linear shapes by cylindrical lenses (102) to (105), and (207), then simultaneously irradiate an irradiation surface (209). If an amorphous silicon film formed on a glass substrate is disposed on the irradiation surface (209), an area will be irradiated by both a linear shape beam entering from a front surface and a linear shape beam that has transmitted through the glass surface. Both linear shape beams irradiate the same area to thereby crystallize the amorphous silicon film.

Abstract: Provided is a method of fabricating a pseudomorphic high electron mobility transistor (PHEMT).

Abstract: Complementary IGFETs (210W and 220W or 530 and 540) are fabricated so that the body dopant concentration in each IGFET decreases by at least 10 in moving from a subsurface location in the body material of that IGFET up to one of its source/drain zones. Semiconductor dopant, typically a fast-diffusing species such as aluminum, is introduced into starting semiconductor material to form a relatively uniformly doped region that serves as body material (108) for one of the IGFETs. A remaining part of the starting material serves as body material (268) for the other IGFET. Well dopant is introduced into the body material of each IGFET for establishing the requisite body dopant profile. Alternatively, a cavity is formed through an initial structure having body material (108) doped in the preceding way for one of the IGFETs. Semiconductor material is introduced into the cavity to form the body material (568) for the other IGFET.