Abstract: Efficiency of a charging processing of an insulator sample is improved. And, an electron optical system is adjusted according to a contact resistance value of the insulator sample. Breakdown of a sample is performed before the charging processing, and then, the charging processing is performed. A control parameter of the electron optical system is selected using a result of a resistance value of the sample for checking the breakdown.

Abstract: A test structure including a differential gain cell and a differential signal probe include compensation for the Miller effect reducing the frequency dependent variability of the input impedance of the test structure.

Abstract: A device and a method for the electrical contacting of semiconductor devices. One embodiment provides for testing semiconductor devices by using a contacting device for the electrical contacting of a number of semiconductor devices to be tested and for the electrical connection with a test system. The contacting device includes a fluid container for accommodating a fluid adapted to be tempered.

Abstract: An improved interconnection system and method is described, such as for connectors, socket assemblies and/or probe card systems. An exemplary system comprises a probe card interface assembly (PCIA) for establishing electrical connections to a semiconductor wafer mounted in a prober. The PCIA comprises a motherboard parallel to the semiconductor wafer having an upper surface and an opposing lower planar mounting surface, a reference plane defined by a least three points located between the lower surface of the motherboard and the wafer, at least one component located below the motherboard mounting surface, and a mechanism for adjusting the planarity of the reference plane with respect to the wafer. A probe chip having a plurality of spring probes extending there from is mountable and demountable from the PCIA, without the need for further planarity adjustment. The interconnection structures and methods preferably provide improved fabrication cycles.

Abstract: A probe card is provided including a first substrate, a second substrate, and a plurality of conductive wires extending between the first substrate and the second substrate. The conductive wires are fixed (a) at a first end to a contact of the first substrate, and (b) at a second end to a contact of the second substrate.

Abstract: A semiconductor device for testing a semiconductor process applied to manufacturing the semiconductor device is disclosed. The semiconductor device includes at least a testing group. The testing group includes a first testing block and a second testing. The first testing block includes: a first input node; a first output node; a plurality of first selecting nodes; a first reference device, coupled to the first input node and the first output node; and a first target device, coupled to the first selecting nodes and the first output node. The second testing block includes: a second input node; a second output node; a plurality of second selecting nodes; a second reference device, coupled to the second input node and the second output node; and a second target device, coupled to the second selecting nodes and the second output node.

Abstract: A method of testing a semiconductor integrated circuit is disclosed. Specifically, a method of testing a semiconductor integrated circuit comprising a plurality of flip-flops is provided. The disclosed method includes connecting the plurality of flip-flops in series so that the plurality of flip-flops forms a scan-chain; inputting data to the scan-chain while supplying a clock signal to the plurality of flip-flops so that the data is set in the plurality of flip-flops; retaining the data in the plurality of flip-flops while inhibiting the clock signal for a predetermined period; restarting the clock signal to the plurality of flip-flops so that the data retained in the plurality of flip-flops is output from the scan-chain; and comparing the data output from the scan-chain and the data input to the scan-chain to test data retention of the plurality of flip-flops.

Abstract: A serial-interface flash memory device includes a data/address I/O pin and a clock input pin. A bidirectional buffer is coupled to the data/address I/O pin. A serial interface logic block including data direction control is coupled to the clock pin, the bidirectional buffer, to internal control logic, and to read-voltage and modify-voltage generators. A first switch is coupled to the read-voltage generator and the clock buffer and a second switch is coupled to the modify-voltage generator and the clock buffer, the first and second switches each having a control input. Memory drivers are coupled to the read-voltage generator and the modify-voltage generator through the first and second switches. First and second registers coupled between the serial interface logic and the first and second switches. A memory array is coupled to the memory drivers and read amplifiers and program buffers are coupled between the serial interface logic and the memory drivers.

Abstract: A semiconductor device test method and system. One embodiment provides a method for testing semiconductor devices forming a group of semiconductor devices to be tested. For addressing or selection of one of the semiconductor devices of the group, at least two different signals are supplied to the respective semiconductor device to be addressed or selected via at least two different semiconductor device connections.

Abstract: An apparatus and a method for measuring an effective channel. The apparatus includes an automatic measurement system including a testing terminal for a substrate, a switching matrix disposed at one side of the automatic measurement system, a leakage current measuring device and a capacitance measuring device electrically connected to the switching matrix by a predetermined terminal, and a controller which controls the automatic measurement system, the leakage current measuring device, and the capacitance measuring device.

Abstract: Devices that couple to high voltage transmission lines obtain power themselves using the body capacitance of an element of the devices. The devices generate a comparatively lower voltage from the current flowing between the high voltage line and the element of the device that generates the body capacitance. The devices can be used to operate sensors that monitor the transmission lines or parameters of the power distribution system, such as current, line temperature, vibration, and the like. The devices can also be used as indicators, such as aircraft warning lights, information signs, etc. In addition, the devices can operate as RF transmission/reception or repeater devices, radar devices, mesh networking nodes, video/audio surveillance, sound emitting devices for scaring animals, drones that traverse the power line, etc. Because the devices operate in response to line voltage rather than current, the devices are reliable even in low current conditions.

Abstract: Measured or otherwise known operating characteristics of a DC/DC power converter are used to determine, without measuring, an operating characteristic of the DC/DC power converter.

Abstract: Power-on-reset circuitry is provided for integrated circuits such as programmable logic device integrated circuits. The power-on-reset circuitry may use comparator-based trip point voltage detectors to monitor power supply voltages. The trip point detectors may use circuitry to produce trip point voltages from a bandgap reference voltage. Controller logic may process signals from the trip point detectors to produce a corresponding power-on-reset signal. The power-on-reset circuitry may contain a noise filter that suppresses noise from power supply voltage spikes. Normal operation of the power-on-reset circuitry may be blocked during testing. The power-on-reset circuitry may be disabled when the bandgap reference voltage has not reached a desired level. The power-on-reset circuitry may be sensitive or insensitive to the power-up sequence used by the power supply signals.

Abstract: A repeatable non-uniform segmented routing architecture in a field programmable gate array comprising: a repeatable block of routing tracks, the routing tracks grouped into sets of routing tracks, each set having a first routing track in a first track position, a second routing track in a last track position, a programmable element, and a direct address device for programming the programmable element; wherein at least one of the routing tracks is segmented into non-uniform lengths by the programmable element and the second routing track crosses-over to the first track position in a region adjacent to an edge of the repeatable block; and wherein a first plurality of the routing track sets proceed in a horizontal direction and a second plurality of the routing track sets proceed in a vertical direction.

Abstract: A differential driving circuit used for low voltage differential signals and an electronic device incorporating the same are provided wherein no differential amplifiers are used or the number of differential amplifiers are reduced, thereby reducing the circuit area and the current consumption and further solving the problem of oscillation caused by noise, while a high driving performance is achieved. There are included a switch circuit an output circuit and a reference potential generating circuit. The switch circuit, which comprises MOS transistors, receives differential signals and outputs current signals.

Abstract: A slew-rate controlled driver circuit in an integrated circuit fabricated in a low voltage CMOS process, having an input node and an output node. A PMOS pull-up transistor is provided, having a source connected to one side of a power supply, having a gate, and having a drain connected to the output node. The PMOS transistor also has a parasitic capacitance between its gate and drain, having a value that may vary from one integrated circuit to the next from process variations and in response to varying circuit conditions. A current source generates a current having a level corresponding to the value of the parasitic capacitance, and to provide that current to the gate of the PMOS transistor. A level shifter receives an input signal having a voltage varying in a first range provides as output signal to the gate of the PMOS transistor shifted to a level suitable for the PMOS transistor.

Abstract: The present invention relates to a gate driving circuit, comprising a driver control circuit, a voltage following bias circuit, a pull up circuit and a MOS transistor. The driver control circuit receives an active signal and generates a pull up signal or a pull down signal. In case of the pull up signal, the MOS transistor is turned to the OFF state by the pull up circuit, and there is no current for the output load device. In case of the pull down signal, the MOS transistor is turned to the ON state by the voltage following bias circuit. The driving voltage for the gate of the MOS transistor has a constant voltage drop according to the external supply voltage. Therefore, the gate driving circuit of the present invention provides a constant current for the output load device.

Abstract: A decoder circuit that selects a grayscale voltage responsive to digital input includes a first transistor circuit that selects grayscale voltages greater than a certain voltage and a second transistor circuit that selects grayscale voltages less than the certain voltage. The two transistor circuits are formed in separate substrates, one substrate being a well formed in the other substrate, or both substrates being wells formed in a third substrate. The substrate of the first transistor circuit is biased at a higher potential than the substrate of the second transistor circuit. This biasing scheme enables all selected grayscale voltages to propagate quickly through the decoder circuit.

Abstract: An apparatus comprising a comparator circuit, a reference circuit, a plurality of elements and a logic circuit. The comparator circuit may be configured to generate a difference signal in response to (i) a reference signal and (ii) a test signal. The reference circuit configured to generate the reference signal in response to a first control signal. The plurality of elements may each be configured to generate an intermediate test signal. One of the intermediate test signals may be presented as the test signal by activating one of the test elements, in response to a second control signal. The logic circuit may be configured to generate (i) the first control signal and (ii) the second control signal, each in response to the difference signal.

Abstract: A phase frequency detector compares a reference clock signal to a feedback clock signal to generate pulses in one or more output signals. The one or more output signals have a minimum pulse width. The phase frequency detector has a temperature sensing circuit. The phase frequency detector adjusts the minimum pulse width of the one or more output signals using the temperature sensing circuit to compensate for variations in the temperature of the phase frequency detector.

Abstract: The voltage produced by an input current (in) is sampled (S1, S2, S3) and stored on the gate (46) of a Fet (T1). The stored gate voltage allows the FET to function as the reference current source of a current mirror (T2, T3) which generates an output current (iout) proportional to the sampled input current. The current mirror uses dual gate floating gate FETS (T2, T3) whose mirroring ratio can be finely adjusted by adjusting the bias voltages (V1, V2) applied to their auxiliary gate electrodes (425,435).

Abstract: A method drives a transistor half-bridge. The method includes measuring a delay time between an edge of an input signal and an corresponding edge of a phase signal, and saving the delay time as a saved delay time value. The phase signal is the output of the transistor half-bridge. In the method, the following steps are repeated until the saved delay time value differs from the delay time by more than a given threshold: decrementing the delay-value of a programmable delay circuit and the saved delay time value by a given decrement, the programmable delay circuit coupled to a control terminal of a first transistor of the half-bridge, and measuring the delay time between an edge of the input signal and an corresponding edge of the phase signal.

Abstract: A gate drive circuit including dead time control circuits delaying on periods of switching elements S1, S2 based on a control signal; driving circuits; and monitor circuits. Each of the monitor circuits includes a current source and an N-type FET in which the source is connected to the gate of one of the switching elements; the drain is connected to the current source; and a predetermined voltage is applied to the gate. When an off state of one of the switching elements is detected, the N-type FET Qn outputs an off signal to the dead time control circuit on the other switching element side. Based on the off signal, the dead time control circuit on the other switching element side terminates an operation of delaying the on period of the other switching element.

Abstract: A delayed locked loop (DLL) system and method for determining a forward clock path delay are disclosed. One embodiment of the DLL system includes a delay line having a plurality of delay stages. The DLL system also includes a measure shot device configured to determine a forward clock path delay of the DLL system. The measure shot device is configured to provide a calibration sequence into the DLL loop and to detect the calibration sequence after the calibration sequence has passed through the DLL loop. The measure shot device is further configured to count the number of clocks for a period of time between providing and detecting the calibration sequence. The number of clocks can be used to calibrate components of the DLL system.

Abstract: A system and a method for operating the same. The system includes a fractional-N phase-locked loop (PLL). The PLL includes a PLL input and a PLL output. The fractional-N PLL further includes a multiplexer. The multiplexer includes a multiplexer output electrically coupled to the PLL input. The multiplexer further includes M multiplexer inputs, M being an integer greater than 1. Two or more reference frequencies are applied to the inputs of the multiplexer, by the selection of one from the reference frequencies, the low spur can be reached.

Abstract: A phase locked loop (PLL) which includes a phase frequency detector coupled with a time to digital converter capable of comparing a reference signal with an oscillator signal and generating a digital value representing the phase difference between the reference signal and the oscillator signal. The PLL further includes a state machine for phase acquisition that is capable of generating a control value depending on the digital value, and a controllable oscillator that is capable of generating the oscillator signal depending on the control value.

Abstract: A pulse width modulation (PWM) wave output circuit that efficiently and accurately outputs dual PWM waves includes two comparators, an OR circuit, and an AND circuit. A voltage generator supplies the comparators with ramp voltages having the same wave height and shifted phases. The comparator compares the ramp voltages with the reference voltage and provides the comparison results to the OR circuit and the AND circuit. The OR circuit outputs a first modulation wave, and the AND circuit generates a second modulation wave. Accordingly, modulation waves having different duties are output based on ramp voltage having different phases.

Abstract: A Duty Cycle Correction (DCC) circuit is provide in which pairs of field effect transistors (FETs) in known DCC circuit topologies are replaced with linear resistors coupled to switches of the DCC circuit such that when the switch is open, the input signal is routed through the linear resistors. The linear resistors are more tolerant of process, voltage and temperature (PVT) fluctuations than FETs and thus, the resulting DCC circuit provides a relatively smaller change in DCC correction range with PVT fluctuations than the known DCC circuit topology that employs FETs. The linear resistors may be provided in parallel with the switches and in series with a pair of FETs having relatively large resistance values. The linear resistors provide resistance that pulls-up or pulls-down the pulse width of the input signal so as to provide correction to the duty cycle of the input signal.

Abstract: The present disclosure provides for a processor that can include digital processing circuitry that receives a digital clock signal from a supply regulated phase locked loop. The supply regulated phase locked loop can include a voltage controlled oscillator that can output an analog signal and a level restorer that can receive the analog signal from the voltage controlled oscillator and can translate the analog output into a digital signal that corresponds to an analog output of the voltage controlled oscillator. The supply regulated phase locked loop can receive an analog input having an input voltage that is within a range of acceptable input voltages. The supply regulated phase locked loop can also be configured to generate the digital output signal, such that the range of acceptable input voltages includes voltage values that are greater than and less than the output voltage.

Abstract: The present invention comprises a microcontroller unit including a processor for generating a power down signal. Control logic generates a hold signal responsive to the power down signal. A voltage regulator provides a regulated voltage responsive to an input voltage and powers down responsive to the power down signal. At least one digital device powered by the regulated voltage enters a powered down mode responsive to the voltage regulator entering the powered down state. The at least one digital device provides at least one digital output signal that is provided to an input/output cell. The input/output cell also is connected to receive a hold signal. The input/output cell maintains a last state of the digital output signal responsive to the hold signal when the at least one digital device enters the powered down state.

Abstract: Methods and systems are described for converting single-ended signals to differential signals. In one exemplary embodiment, an input single-ended signal is received and converted into a differential signal having minimized jitter without using a DC-cancellation loop.

Abstract: The level shift device of the present invention comprises: a level shift circuit which converts a voltage level of a single input signal; and a duty correcting circuit which offsets a difference in the duty of an output signal of the level shift circuit with respect to the duty of the input signal.

Abstract: A semiconductor integrated circuit includes a high-side transistor, a low-side transistor, a level shift circuit for driving the high-side transistor, and a pre-driver circuit for driving the low-side transistor. A connection point of the high-side transistor and the low-side transistor serves as an output terminal. The level shift circuit has first and second N-type MOS transistors whose gates are driven by the pre-driver circuit. The semiconductor integrated circuit further includes a diode whose anode is connected to the drain of the first or second N-type MOS transistor to which the gate of the high-side transistor is not connected, and whose cathode is connected to the output terminal.

Abstract: The present invention provides a level shifter that prevents through currents thereat. In the level shifter, a holding circuit is provided which comprises an inverter made up of transistors connected between an internal node and a ground potential and an inverter made up of transistors connected between an internal node and the ground potential. These inverters are connected in loop form thereby to hold signals of nodes. Thus, even when input signals complementary to each other originally are both brought to a level “L”, the signals of the nodes are held at the immediately preceding level, thus making it possible to prevent through currents from flowing through the transistors respectively.

Abstract: A semiconductor device connected to other semiconductor device, includes a control portion which controls a drive capability for the other semiconductor device based on control information for the other semiconductor device.

Abstract: Systems and methods are provided for automatically driving and maintaining oscillation of an assembly system including a mass and a bias member (which may also be referred to as a spring or elastomeric member) at or near a resonant frequency of the assembly system. In one example, apparatus for maintaining oscillation of a moveable subassembly including a mass and a bias comprises a controller operable to receive a signal from a sensor associated with a position or motion of the subassembly, and generate a drive signal for driving the subassembly in response to the received signal from the sensor. In this manner, the controller may monitor the motion of the subassembly and adjust or modulate the driving force over time to maintain the subassembly at or near a resonant frequency. Further, in one example, the subassembly includes a resonant engine comprising a movable mirror of an illumination device.

Abstract: A circuit and a method for adjusting the performance of an integrated circuit, the circuit includes: first and second sets of FETs having respective first and second threshold voltages, the first threshold voltage different from the second threshold voltage; a first monitor circuit containing at least one FET of the first set of FETs and a second monitor circuit containing at least one FET of the second set of FETs; a compare circuit configured to generate a compare signal based on a performance measurement of the first monitor circuit and a performance measurement of the second monitor circuit; and a control unit configured to generate a control signal to a voltage regulator based on the compare signal, the voltage regulator configured to supply a bias voltage to wells of FETs of the second set of FETs, the value of the bias voltage based on the control signal.

Abstract: A multi-chip semiconductor device includes a substrate, a first semiconductor chip, a second semiconductor chip, and a plastic mold. The first semiconductor chip has a function for executing a predetermined electrical operation and is installed on the substrate. The second semiconductor chip is installed on the first semiconductor chip and is configured to integrate a power circuit to receive an external power supply and to supply an electric power to the first semiconductor chip based on the external power supply. The plastic mold seals together the first and second semiconductor chips on the substrate.

Abstract: A semiconductor charge pump includes a plurality of P-channel MOS transistors being connected in series, a plurality of first pumping capacitors one electrode of each of which is connected to a connection point of each of the P-channel MOS transistors, a clock signal generating circuit which generates first and second clock signals whose phases are different from each other by 180 degrees, the first and second clock signals being alternately supplied to the other electrodes of the first pumping capacitors. The semiconductor charge pump further includes a plurality of dynamic level converter circuits each including a resistor element and a second pumping capacitor and connected to each of gates of the P-channel MOS transistors.

Abstract: A two-phase charge pump circuit without the body effect includes a voltage boost stage, an input stage connected to the voltage boost stage, and a high-voltage generator connected to the input stage. Each of the circuits can consist of NMOS or PMOS transistors. The body of each NMOS transistor is connected to an NMOS switch. The body of each PMOS transistor is connected to a PMOS switch. By providing an appropriate driving signal to each NMOS or PMOS switch, the body of each NMOS transistor can be switched to a lower voltage level and the body of each PMOS transistor is switched to a higher voltage level. This can prevent the body effect from occurring.

Abstract: A reference ladder having a plurality of embedded, programmable discontinuity resistors for adjusting the output voltages at a plurality of output taps of the ladder. In an embodiment, each discontinuity resistor has a programmable resistance. The reference ladder is factory tested to determine the voltage outputs at a plurality of output taps. A difference between the measured output voltages and the nominal output voltages is calculated. A determination is made of optimized resistances of the discontinuity resistors in order to minimize the differences between measured and nominal output voltages. The discontinuity resistors are then programmed, with the desired resistances stored in a non-volatile memory of the reference ladder. The output of the reference ladder may be further adjusted by using a trimming network at the bottom of the ladder to add a uniform offset to all the output voltages of all the output taps.

Abstract: A circuit for synthesising a negative resistance, comprising first and second active devices, the first device having a control terminal connected to a first node, and the second device having a current flow terminal connected to the first node, and the first and second devices interacting with each other such that the circuit synthesises a negative resistance.

Abstract: The various embodiments disclose capacitor multiplier circuits that may be integrated into imaging devices, such as for semiconductor Complimentary Metal Oxide Semiconductor (CMOS) image sensors, to create an effective capacitance in response to a low frequency, such as row-wise temporal noise, that may be generated along a row of image sensor pixels. The created effective capacitance from any one of the capacitor multiplier circuits along with a small signal resistance created by a trans-conductance of a current biasing transistor form a low pass filter that will attenuate the low frequency noise.

Abstract: A semiconductor integrated circuit includes a semiconductor substrate, one or more wells formed in the semiconductor substrate, one or more diffusion layers formed in the one or more wells, a plurality of interconnects formed in an interconnect layer, the one or more diffusion layers and the plurality of interconnects being connected in series to provide a coupling between a first potential and a second potential, and a comparison circuit coupled to one of the interconnects set at a third potential between the first potential and the second potential, and configured to compare the third potential with a reference potential, wherein a first interconnect of the plurality of interconnects that is set to the first potential is connected to at least a first well of the one or more wells and connected to a first diffusion layer of the one or more diffusion layers that is formed in the first well.

Abstract: A demodulator circuit (DMOD) for amplitude-modulated signals is defined which comprises a threshold switch module (SWS), wherein a signal output (SA) of the threshold switch module (SWS) is connected to the output (DA) of the demodulator circuit (DMOD) and a signal input (SE) of the threshold switch module (SWS) is connected via a first capacitor (C1) to the input (E) of the demodulator circuit (DMOD).

Abstract: There is described an amplifier for a radio frequency signal for transmitting a transmit signal to an otological apparatus. The amplifier comprises at least one power transistor for switching an output signal. A breaker gap of the power transistor is actively connected to a network such that a power loss converted in the power transistor is at least partially reduced during a switchover into a switched-on state and/or at least during a switchover into a switched-off state. The breaker gap of the at least one transistor is at least indirectly connected in series to a power supply source by way of a choke coil. The amplifier comprises a transmit coil as an output load, with the transmit coil comprising an inductor and being actively connected to the power transistor. The transmit coil is coupled to the choke coil in a transformer-like manner, with the choke coil thus being able to transmit an output power to the transmit coil. The transmit coil can generate a transmit signal from the output power.

Abstract: A differential amplifier includes a differential input pair (2A) coupled to a folded cascode stage (2B) and a common mode feedback circuit (34) including a tracking circuit (30A) coupled to first (Vout?) and second (Vout+) outputs of the folded cascode stage (2B). The first and second outputs are coupled to first terminals of first (31A) and second (31B) tracking capacitors which have second terminals on which a first common mode output signal (VCM1) is produced and also are coupled to first terminals of third (32A) and fourth (32B) tracking capacitors, respectively, which have second terminals on which a second common mode output signal (VCM2) is produced. The first and third tracking capacitors are discharged by first (27A) and second (27B) switches that directly couple the first and second outputs to first and second inputs of a common mode feedback amplifier (4). A desired common mode output voltage (VCM-IN) is applied to a third input of the common mode feedback amplifier.

Abstract: In one embodiment of the present invention, an operational amplifier circuit, a switching element is closed and a switching element is opened. A latch circuit DL latches an output voltage of an operational amplifier and supplies a Q output corresponding to the output voltage. A control circuit supplies an offset adjustment signal to an offset adjustment input terminal OR of the operational amplifier, thereby adjusting an offset of the output voltage. The latch circuit DL latches again the output voltage thus adjusted and minutely adjusts the offset adjustment signal so as to adjust the remaining offset. Weighting is carried out in accordance with how many times latching has been carried out, and the offset of the output voltage of the operational amplifier is quantized, thereby obtaining a binary logical signal and storing the signal in the control circuit.

Abstract: Disclosed are a digital phase-frequency detector and a method of operating a digital phase-frequency detector. The detector includes an input circuit, an output circuit and a reset circuit. In use, the input circuit receives first and second input signals during a plurality of cycles, and during a given one of the cycles, generates a first intermediate signal or a second intermediate signal depending on which of the first and second input signals was received first during that given one of said cycles. The output circuit receives these intermediate signals, and outputs, during said one cycle, a first output signal or a second output signal depending on which one of intermediate signals was received by the output circuit during said one cycle. The reset circuit applies a reset signal to the input circuit under defined conditions to begin a new one of said plurality of cycles.

Abstract: A phase-locked loop (PLL) integrated circuit includes an oscillation control voltage generating circuit therein. The oscillation control voltage generating circuit is configured to pre-scale an output current of a charge pump therein to a first level in response to disposing the PLL integrated circuit into a pre-calibration mode of operation. The oscillation control voltage generating circuit may be responsive to an input signal (e.g., SIN) and a feedback signal (e.g., SFEED), and the magnitude of the first level of the charge pump current during the pre-calibration mode of operation may be independent of any phase difference between the input signal and the feedback signal.