Abstract: The invention refers to X-ray devices, an X-ray detector and a method of correcting intensity signals. An X-ray detector then comprises for determining the intensity of X-rays, which comprise a proportion of primary radiation having an irradiation direction and a proportion of scattered radiation, at least a first sensor elements, which are each provided for converting the X-rays into first and second intensity signals, and a filter element, which is provided for decreasing the proportion of scattered radiation in the intensity of the X-rays, wherein the second sensor elements are arranged in irradiation direction behind the filter element and wherein the first sensor element fastened to the filter element is provided for determining the intensity of the X-rays before leaving the filter element. The proportion of the scattered radiation calculated from the measuring data of the first and second sensor elements is provided for correcting the second intensity signals for the following image generation.

Abstract: According to one embodiment, a system for linearizing image data corresponding to one or more objects and output by an imaging device is provided. The system includes a processor configured for: receiving the image data from the imaging device; and producing a generally linear relationship between the image data and a thickness of the one or more objects. The generally linear relationship is produced according to the equation I = I o ? ? u l ? l . I is an intensity of the image data, I0 is an intensity of energy produced by the imaging device for outputting the image data, ? is an attenuation coefficient of the one or more objects, and l is the thickness of the one or more objects.

Abstract: The invention relates to an X-ray detector with an array of pixels (10) that are composed of a scintillation layer (11), a coupling layer (12), and a sensitive layer (13). The coupling layer (12) comprises light guiding units (17) and shielding units (16), wherein the shielding units (16) are disposed above electronic processing circuits (15a, 15b) that are susceptible to disturbances by X-radiation. In an alternative embodiment, the coupling layer comprises a material like lead-glass that is transparent for light and absorbing for X-radiation. Preferably a wavelength-shifting material incorporated into the coupling layer (12) shifts the wavelength (?1) of the photons generated in the scintillation layer (11) to values (?2) at which the sensitive layer (13) has a higher sensitivity.

Abstract: A method for detecting X-rays using an X-ray detector including an X-ray detecting part includes disposing a heat-circulating part adjacent to the X-ray detecting part. The X-ray detecting part includes light-detecting diodes. The method further includes detecting ambient temperatures of the light detecting diodes, circulating heat in the heat-circulating part based upon a result of the detecting the ambient temperatures of the light detecting diodes, increasing a uniformity of the ambient temperatures of the light-detecting diodes, and detecting X-rays irradiated into the X-ray detector.

Abstract: An integrated radiation detector having a pulse-mode operating photosensor optically coupled to a gamma sensing element and a neutron sensing element is disclosed. The detector includes pulse shape and processing electronics package that uses an analog to digital converter (ADC) and a charge to digital converter (QDC) to determine scintillation decay times and classify radiation interactions by radiation type. The pulse shape and processing electronics package determines a maximum gamma energy from the spectrum associated with gamma rays detected by the gamma sensing element to adaptively select a gamma threshold for the neutron sensing element. A light pulse attributed to the neutron sensing element is a valid neutron event when the amplitude of the light pulse is above the gamma threshold.

Abstract: We describe an ultra-small structure that produces visible light of varying frequency, from a single metallic layer. In one example, a row of metallic posts are etched or plated on a substrate according to a particular geometry. When a charged particle beam passed close by the row of posts, the posts and cavities between them cooperate to resonate and produce radiation in the visible spectrum (or even higher). A plurality of such rows of different geometries can be etched or plated from a single metal layer such that the charged particle beam will yield different visible light frequencies (i.e., different colors) using different ones of the rows.

Abstract: An ion gun 11 supplies an Ar gas into a main body 111 from a gas inlet 114, causes DC hot cathode discharge between a filament 113 and an anode 112 to generate Ar plasma. Next, a voltage gradient is applied to separated accelerator grids 116a, 116b having a bi-separated configuration in an ion ejecting direction. The each potential of the separated accelerator grids 116a, 116b is independently controlled by independently setting accelerator control switches 121a, 121b on or off to change the potential of that of the separated accelerator grids 116a, 116b which corresponds to an ion beam to be disabled.

Abstract: Apparatus and methods for compensating for the movement of a substrate in a lithographic apparatus during a pulse of radiation include providing a pivotable mirror configured to move a patterned projection beam incident on the substrate in synchronism with the substrate.

Abstract: A system for controlling the energy of radiation pulses. A detector monitors energy of the pulses and an optical shutter trims the radiation pulses after a suitable optical delay line. The accuracy of the control of the energy of the radiation pulses can be improved by matching a rate of response of the radiation detector to a rate of response of the optical shutter.

Abstract: Embodiments of methods of modifying surface features on a workpiece with a gas cluster ion beam are generally described herein. Other embodiments may be described and claimed.

Abstract: It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively.

Abstract: Electromagnetic radiation sensitive mask materials are provided. The mask materials are chosen such a first percentage of electromagnetic radiation at a first wavelength is transmitted through the mask material prior to the exposure of the mask material to electromagnetic radiation at a second wavelength and a second percentage of electromagnetic radiation at the first wavelength is transmitted through at least a portion of the mask material after the at least a portion of the mask material is exposed to electromagnetic radiation at the second wavelength. Methods of patterning substrates using electromagnetic radiation sensitive mask materials are also provided. Compositions for producing masks are provided, and systems are provided.

Abstract: A mobile electron beam radiation sterilizing apparatus includes a movable chassis vehicle; a cabinet body installed on the chassis vehicle; an electron accelerator, which generates electron beam for articles to be radiation-processed, wherein the electron accelerator is provided in the cabinet body; an accelerator control box, which controls operation of the electron accelerator, a radiation shielding system comprised of: a stationary shielding body covering the electron accelerator; a pair of rotatable shielding doors, through which a passage is formed for an article to be processed to enter or exit, rotatably connected to the stationary shielding body; a motor for switching on and switching off the rotatable shielding doors.

Abstract: A system for eradicating or neutralizing undesirable elements such as organisms or insects on or in a particular article to prevent harm to humans or animals coming in contact with or exposed to the article, comprising exposing predetermined surfaces of the article to a predetermined ultraviolet radiation to kill or neutralize undesirable elements on the surfaces of the article; and thereafter applying to the surfaces of the article an eradication technology treatment to further kill, neutralize and/or drive out and expose undesirable elements. After the application of the eradication technology treatment, the article surfaces may be exposed to a second ultraviolet radiation to kill or neutralize any remaining exposed undesirable elements. The apparatus may be in the form of a handheld device, mobile modular units, or a large unit on a trailer or in a fixed location.

Abstract: Electrode ablation is controlled in EUV light source device that gasifies a raw material by irradiation with an energy beam and produces a high-temperature plasma using electrodes a raw material for plasma is dripped in a space in the vicinity of, but other than, the discharge region and from which the gasified raw material can reach the discharge region between the discharge electrodes and a laser beam irradiates the high-temperature plasma raw material. A gasified high-temperature plasma raw material, gasified by the laser beam, spreads in the direction of the discharge region. At this time, power is applied on a pair of discharge electrodes, the gasified high-temperature plasma raw material is heated and excited to become a high-temperature plasma, and EUV radiation is emitted. This EUV radiation is collected by an EUV collector mirror and sent to lithography equipment.

Abstract: According to the method for characterizing fancy yarn, at least one characteristic of the fancy yarn is scanned along the longitudinal direction of the fancy yarn. Values of the scanning are evaluated and the results of the evaluation are outputted. The results of the evaluation are the fancy yarn parameters such as base yarn mass, base yarn diameter, slub distance, mass increase (?M) of a slub, slub diameter increase, slub diameter, slub length (LE) and/or slub total mass. The evaluation includes a smoothing or idealization of the scanning values, e.g. an idealization of the webs (91, 91?) as horizontal stretches and of the slubs (92, 92?) as trapeziums. the idealized course of the curve may be subtracted from the original course of the curve in order to obtain information on the slubs on the one hand, and on the virtual base yarn on the other hand. The occurring data quantity may be reduced by specifying parameters of the idealized course of the curve.

Abstract: A memory device, in particular to a resistively switching memory device such as a Phase Change Random Access Memory (“PCRAM”), with a transistor is disclosed. Further, the invention relates to a method for fabricating a memory device. According one embodiment of the invention, a memory device is provided, having at least one nanowire or nanotube or nanofibre access transistor. In one embodiment, the nanowire or nanotube or nanofibre access transistor directly contacts a switching active material of the memory device. According to an additional embodiment, a memory device includes at least one nanowire or nanotube or nanofibre transistor with a vertically arranged nanowire or nanotube or nanofibre.

Abstract: A lateral phase change memory with spacer electrodes and method of manufacturing the same are provided. The memory is formed by connecting the conductive electrodes with lower resistivity and the spacer electrodes with higher resistivity, and filling the phase change material between the spacer electrodes. Therefore, the area that the phase change material contacts the spacer electrodes and the volume of the phase change material can be reduced; thereby the programming current and power consumption of the phase change memory are reduced.

Abstract: A method for forming arrays of metal, alloy, semiconductor or magnetic nanoparticles is described. An embodiment of the method comprises placing a scaffold on a substrate, the scaffold comprising, for example, polynucleotides and/or polypeptides, and coupling the nanoparticles to the scaffold. Methods of producing arrays in predetermined patterns and electronic devices that incorporate such patterned arrays are also described.

Abstract: A single-photon detector is disclosed that provides reduced afterpulsing without some of the disadvantages for doing so in the prior art. An embodiment of the present invention provides a stimulus pulse to the active area of an avalanche photodetector to stimulate charges that are trapped in energy trap states to detrap. In some embodiments of the present invention, the stimulus pulse is a thermal pulse.

Abstract: An active matrix organic electro luminescence display panel device includes a substrate, at least one low refractive thin film formed on the substrate, and an organic electro luminescence diode formed on the low refractive thin film to selectively emit light. Also, a method of fabricating an active matrix organic electro luminescence display panel device includes the steps of forming at least one low refractive thin film on a substrate, and forming an organic electro luminescence diode on the low refractive thin film to selectively emit light.

Abstract: An organic light-emitting device is constructed with an anode provided with a reflective metal layer, a transparent conductive layer, and a reflective metal oxide layer interposed therebetween, a cathode, and an organic functional layer interposed between the transparent conductive layer of the anode and the cathode, and provided with at least an organic emission layer. With this configuration, the reflective anode has high reflectivity, the reflectivity thereof is not substantially changed depending on wavelengths, and the reflective anode is free from defects caused by a galvanic phenomenon.

Abstract: There have been problems in that a dedicated apparatus is needed for a conventional method of manufacturing an organic thin film transistor and in that: a little amount of an organic semiconductor film is formed with respect to a usage amount of a material; and most of the used material is discarded. Further, apparatus maintenance such as cleaning of the inside of an apparatus cup or chamber has needed to be frequently carried out in order to remove the contamination resulting from the material that is wastefully discarded. Therefore, a great cost for materials and man-hours for maintenance of apparatus have been required. In the present invention, a uniform organic semiconductor film is formed by forming an aperture between a first substrate for forming the organic semiconductor film and a second substrate used for injection with an insulating film formed at a specific spot and by injecting an organic semiconductor film material into the aperture due to capillarity to the aperture.

Abstract: A semiconductor device and method for manufacturing the same are provided. The semiconductor device includes conductor or semiconductor fine particles, and organic semiconductor molecules bonded to the fine particles to form a conductive path, the conductivity of the conductive path being controlled by an electric field. In the semiconductor device, protective film molecules bonding to the adjacent fine particles bond to each other to form the organic semiconductor molecules which connect the fine particles to each other.

Abstract: The purpose of the present invention is to provide a nonlinear element with high productivity, which can be driven at low voltage, an element substrate including the nonlinear element, and a liquid crystal display device including the element substrate. A structure of the nonlinear element of the present invention includes a layer formed using a composite material containing an inorganic compound and an organic compound between a first electrode and a second electrode. Further, as the composite material containing the inorganic compound and the organic compound, a composite material, which exhibits nonlinear behavior in both cases of applying forward bias voltage and reverse bias voltage, is used.

Abstract: An organic light emitting diode display includes a substrate on which a transistor area and a capacitor area are defined, a semiconductor layer formed at the transistor area, and a capacitor having a plurality of electrodes. The plurality of electrodes include a first electrode, a second electrode that is disposed on the first electrode with an insulation layer formed between the first and second electrodes, and a third electrode that is disposed on the second electrode with an insulation layer formed between the second and third electrodes and connected to the first electrode through at least two contact holes.

Abstract: A process of fabricating a thin film semiconductor device is proposed, which is suitable for mass production and enables to lower the production cost. A first substrate is subject to anodization to form a porous layer thereon. Then, a thin film semiconductor layer is formed on the porous layer. Using the thin film semiconductor layer, a semiconductor device is formed, and wiring is formed between the semiconductor devices. After that, the semiconductor devices on the first substrate is bonded to a second substrate. The semiconductor devices are separated from the first substrate. Further, the semiconductor devices are electrically insulated by removing a part of the thin film semiconductor layer from the separated surface of the second substrate.

Abstract: A semiconductor device can include a channel including a zinc-indium oxide film.

Abstract: To improve the reliability of contact with an anisotropic conductive film in a semiconductor device such as a liquid crystal display panel, a terminal portion (182) of a connecting wiring (183) on an active matrix substrate is electrically connected to an FPC (191) by an anisotropic conductive film (195). The connecting wiring (183) is manufactured in the same process with a source/drain wiring of a TFT on the active matrix substrate, and is made of a lamination film of a metallic film and a transparent conductive film. In the connecting portion with the anisotropic conductive film (195), a side surface of the connecting wiring (183) is covered with a protecting film (173) made of an insulating material.

Abstract: Disclosed is a thin film transistor substrate and a system for inspecting the same. The thin film transistor substrate comprises gate wiring formed on an insulation substrate and including gate lines, and gate electrodes and gate pads connected to the gate lines; a gate insulation layer covering the gate wiring; a semiconductor layer formed over the gate insulation layer; data wiring formed over the gate insulation layer and including data pads; a protection layer covering the data wiring; auxiliary pads connected to the data pads through contact holes formed in the protection layer; and a pad auxiliary layer formed protruding a predetermined height under the data pads.

Abstract: An organic light emitting display and method of fabricating the same are provided. The organic light emitting display includes: a TFT disposed on a substrate and having a gate electrode and source and drain electrodes; a pixel electrode formed on a planarization layer having a via contact hole over the substrate, connected to one of the source and drain electrodes through the via contact hole, and having an etching surface extending to the planarization layer; a pixel defining layer pattern for defining an emission region formed on the entire surface; an organic layer formed on an emission region of the pixel electrode, and having at least an emission layer; and an opposite electrode formed on the entire surface, thereby preventing the organic layer from being separated from an edge of the pixel electrode and a short circuit from occurring between the pixel electrode and the opposite electrode to improve device characteristics and reliability.

Abstract: A semiconductor device and an electro-optical device that ensures a stable output are provided even when there is a change in a source-drain current in a saturated operation region of a thin film transistor due to kink effects. The thin film transistor has a multi-gate structure with a polycrystalline silicon film as an active layer, and a source-side first thin film transistor portion and a drain-side second thin film transistor portion connected in series. The first thin film transistor portion has a drain-side back gate electrode that is connected with a first front gate electrode. The second thin film transistor portion has a source-side back gate electrode that is connected with a second front gate electrode.

Abstract: A thin film transistor substrate and a fabricating method thereof for simplifying a process are disclosed. In a liquid crystal display device according to the present invention, a gate line is provided on a substrate. A data line crosses the gate line with having a gate insulating film therebetween to define a pixel area. A thin film transistor includes a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode opposed to the source electrode and a semiconductor layer for defining a channel between the source electrode and the drain electrode. A pixel electrode is connected to the drain electrode and is provided at said pixel area. Herein, said data line, said source electrode and said drain electrode have a double-layer structure in which a source/drain metal pattern and a transparent conductive pattern are built. Said pixel electrode is formed by an extension of the transparent conductive pattern of the drain electrode.

Abstract: An optocoupler has an organic light emitter and an inorganic photodetector with a detector area, the detector area being optically coupled to the organic light emitter. The organic light emitter converts an electrical input signal into a light signal and the inorganic photodetector converts the light signal into an electrical output signal, the organic light emitter and the inorganic photodetector being integrated in a component and galvanically separated.

Abstract: A bendable LED planar light source structure, a flexible substrate therefore, and a manufacturing method thereof are provided. The flexible substrate has metal layers on both sides, where the metal layer on one side has a circuit layout, and the metal layer on the other side has a pattern structure or a whole metal coating with reflecting and scattering characteristics. Meanwhile, bonding pads are provided on the same side or opposite side as the metal layer with the circuit layout, and an array of LED dies is bonded with the bonding pads through wire bonding or flip chip bonding, such that the LED dies are conducted with current through the circuit layout on the flexible substrate, so as to form a planar light source.

Abstract: Disclosed is a light emitting diode having an active region of a multi quantum well structure. The active region is positioned between GaN-based N-type and P-type compound semiconductor layers. At least one of barrier layers in the active region includes an undoped InGaN layer and a Si-doped GaN layer, and the Si-doped GaN layer is in contact with a well layer positioned at a side of the P-type compound semiconductor layer therefrom. Accordingly, carrier overflow and a quantum confined stark effect can be reduced, thereby improving an electron-hole recombination rate. Further, disclosed is an active region of a multi quantum well structure including relatively thick barrier layers and relatively thin barrier layers.

Abstract: Low profile, side-emitting LEDs are described, where all light is efficiently emitted within a relatively narrow angle generally parallel to the surface of the light-generating active layer. The LEDs enable the creation of very thin backlights for backlighting an LCD. In one embodiment, the LED is a flip chip with the n and p electrodes on the same side of the LED, and the LED is mounted electrode-side down on a submount. A reflector is provided on the top surface of the LED so that light impinging on the reflector is reflected back toward the active layer and eventually exits through a side surface of the LED. A waveguide layer and/or one or more phosphors layers are deposed between the semiconductor layers and the reflector for increasing the side emission area for increased efficiency. Side-emitting LEDs with a thickness of between 0.2-0.4 mm can be created.

Abstract: A recess is formed in a land (2) of an LED reflecting plate (1) formed of a metal plate. The recess comprises a flat LED chip mounting portion (7) and a reflecting portion (8) inclined with respect to the LED chip mounting portion (7). The LED reflecting plate (1) is mounted on a printed wiring board (25) such that the land (2) is fitted in a first through hole (18). An LED chip (27) mounted on the LED chip mounting portion (7) is connected to a terminal portion (22) formed on the printed wiring board (25). The printed wiring board (25) is diced along a third through hole (19) to form an LED device (30) as one unit. With this arrangement, heat radiation properties and reflecting efficiency of the LED device (30) can be improved, and the manufacturing cost can be decreased.

Abstract: In a light-emitting device, a mount member mounting a semiconductor light-emitting element is mounted on a circuit board. A multilayer board is used for the mount member. A first conductive pattern formed on the surface layer of the multilayer board and a semiconductor light-emitting element are electrically connected. On the multilayer board, a second conductive pattern formed on an intermediate layer positioned closer to the circuit board than the first conductive pattern is electrically connected to the conductor part of the circuit board with a conductive wire such as a gold wire. Power is fed from the conductor part to the semiconductor light-emitting element via the conductive wire and the conductive patterns.

Abstract: A light-emitting diode (LED) lamp includes a columnar body having a plurality of heat-radiating fins, an LED supporting end, and a mounting end; a first conducting plate disposed on the LED supporting end; an LED having a first electrode in electric contact with the first conducting plate; a second conducting plate in electric contact with a second electrode of the LED; a cap having a rear coupling end covered around the LED supporting end of the columnar body and a front end defining a central opening to enclose a light-emitting section of the LED therein; a first annular gasket disposed between the rear coupling end of the cap and the LED supporting end of the columnar body; and a second annular gasket disposed between the light-emitting section and the central opening of the cap. Therefore, the LED lamp is waterproof and easy to maintain, and allows good heat radiation.

Abstract: In a semiconductor device, a metal oxide semiconductor field effect transistor (MOSFET) is formed in a semiconductor substrate, and an isolation layer is formed on the semiconductor substrate so as to extend along a side of the semiconductor substrate. A first conductive layer is formed on the isolation layer along the side of the semiconductor substrate so as to be electrically connected to a gate of the MOSFET. A second conductive layer is formed on the isolation layer along the side of the semiconductor substrate so as to be electrically connected to a drain of the MOSFET. A protection circuit is made of at least two diodes which are defined between the first conductive layer and the second conductive layer.

Abstract: A first p-type SiGe mixed crystal layer is formed by an epitaxial growth method in a trench, and a second p-type SiGe mixed crystal layer is formed. On the second SiGe mixed crystal layer, a third p-type SiGe mixed crystal layer is formed. The height of an uppermost surface of the first SiGe mixed crystal layer from the bottom of the trench is lower than the depth of the trench with the surface of the silicon substrate being the standard. The height of an uppermost surface of the second SiGe mixed crystal layer from the bottom of the trench is higher than the depth of the trench with the surface of the silicon substrate being the standard. Ge concentrations in the first and third SiGe mixed crystal layers are lower than a Ge concentration in the second SiGe mixed crystal layer.

Abstract: A hybrid electromagnetic bandgap (EBG) structure for broadband suppression of noise on printed wiring boards includes an array of coplanar patches interconnected into a grid by series inductances, and a corresponding array of shunt LC networks connecting the coplanar patches to a second conductive plane. This combination of series inductances and shunt resonant vias lowers the cutoff frequency for the fundamental stopband. The series inductances and shunt capacitances may be implemented using surface mount component technology, or printed traces. Patches may also be interconnected by coplanar coupled transmission lines. The even and odd mode impedances of the coupled lines may be increased by forming slots in the second conductive plane disposed opposite to the transmission line, lowering the cutoff frequency and increasing the bandwidth of the fundamental stopband.

Abstract: Group III-Nitride semiconductor device structures and methods of fabricating Group III-Nitride structures are provided that include an electrically conductive Group III-Nitride substrate, such as a GaN substrate, and a semi-insulating or insulating Group III-Nitride epitaxial layer, such as a GaN epitaxial layer, on the electrically conductive Group III-Nitride substrate. The Group III-Nitride epitaxial layer has a lattice constant that is and a composition that may be substantially the same as a composition and a lattice constant of the Group III-Nitride substrate.

Abstract: A semiconductor structure having: a III-V substrate structure; an enhancement mode transistor device disposed in a first region of the structure; a depletion mode transistor device disposed in a laterally displaced second region of the structure; and a RF/microwave/milli-meter wave transistor device formed in a laterally displaced third region thereof.

Abstract: A vertical transistor having an annular transistor body surrounding a vertical pillar, which can be made from oxide. The transistor body can be grown by a solid phase epitaxial growth process to avoid difficulties with forming sub-lithographic structures via etching processes. The body has ultra-thin dimensions and provides controlled short channel effects with reduced need for high doping levels. Buried data/bit lines are formed in an upper surface of a substrate from which the transistors extend. The transistor can be formed asymmetrically or offset with respect to the data/bit lines. The offset provides laterally asymmetric source regions of the transistors. Continuous conductive paths are provided in the data/bit lines which extend adjacent the source regions to provide better conductive characteristics of the data/bit lines, particularly for aggressively scaled processes.

Abstract: An apparatus and method are disclosed for an improved semiconductor interconnect scheme using a simplified process. In an embodiment of the apparatus, a polysilicon shape is formed on a silicon area. The polysilicon shape is created having a bridging vertex. When a spacer is created on the polysilicon shape, the spacer width is formed to be small enough near the bridging vertex to allow a silicide bridge to form that creates an electrical coupling between the silicon area and the bridging vertex. Semiconductor devices and circuits are created using the improved semiconductor interconnect scheme using the simplified process.

Abstract: The memory comprises, on a semi-conducting substrate, a matrix of cells arranged in lines and columns and each designed to store an information bit. Each cell of a column comprises a magnetic tunnel junction having a line terminal and a column terminal respectively connected to a line conductor and, by means of a transistor, to a first column conductor associated to said column and to a first adjacent column. A gate of the transistor is connected to a gate conductor. The column terminal of each tunnel junction of said column is connected, by means of an additional transistor, to a second column conductor associated to said column and to a second adjacent column. A gate of the additional transistor is connected to an additional gate conductor. The two transistors associated to a cell can have a common electrode.

Abstract: A semiconductor device includes a first capacitor node, a second capacitor node, a first capacitor electrode, a second capacitor electrode, a first switch and a second switch. The first switch is coupled between the first capacitor electrode and the first and second capacitor nodes such that the first switch has a first position that couples the first capacitor electrode to the first capacitor node and a second position that couples the first capacitor electrode to the second capacitor node. The second switch is coupled between the second capacitor electrode and the first and second capacitor nodes such that the second switch has a first position that couples the second capacitor electrode to the first capacitor node and a second position that couples the second capacitor electrode to the second capacitor node.

Abstract: Methods of reducing the floating body effect in vertical transistors are disclosed. The floating body effect occurs when an active region in a pillar is cut off from the substrate by a depletion region and the accompanying electrostatic potential created. In a preferred embodiment, a word line is recessed into the substrate to tie the upper active region to the substrate. The resulting memory cells are preferably used in dynamic random access memory (DRAM) devices.