Abstract: A concrete material is disclosed according to one embodiment. The concrete material may include a mixture of cement, granular rubber and boron in various forms and ratios. The boron may include boron carbide. The rubber may be recovered rubber from used automobile and/or truck tires. Various other components may be added to the cement, such as, for example, binders, water, sand, rock, or other aggregates. Embodiments described herein may be used in radiation shielding applications, such as, for example, nuclear waste facilities, nuclear storage and/or transportation casks, nuclear power plants, medical waste facilities, illicit drug detection facilities, linear accelerator facilities, etc.

Abstract: An optical filter having excellent durability and a display including the same is provided. The optical filter contains therein a transparent substrate, a mesh-shaped electromagnetic shield layer provided on the substrate, and a functional layer provided on the electromagnetic shield layer. The electromagnetic shield layer of the invention is characterized by a surface roughness (Ra) exceeding 0.02 ?m.

Abstract: An electromagnetic valve includes a valve body, a valve element, a movable iron core, a guide tube, a coil, a yoke, and a fixed iron core. The valve body includes a fluid flow path. The valve element is movable and seated on a valve seat provided in the fluid flow path of the valve body. The movable iron core moves the valve element with respect to the valve seat. The guide tube is cylindrical and movably supports the movable iron core. The coil is mounted on an outer periphery of the guide tube. The yoke covers an outside of the coil and forms a magnetic circuit. The fixed iron core is provided facing the movable iron core and attracts the movable iron core by energization of the coil. The valve body is coupled to the guide tube on one opening end side of the guide tube, and the fixed iron core is provided on an other end side of the guide tube with a clearance spaced from an inside of the guide tube.

Abstract: Valves comprise a valve body having a gallery coupled to an inlet and an outlet to facilitate a fluid flow therethrough. A plug is moveably disposed within the valve body and a seat ring assembly may be coupled to the outlet of the valve body. At least one circular motion inducement feature is positioned in a portion of the valve body, the seat ring assembly, or both. The at least one circular inducement feature is configured to induce a circular motion in a fluid flow through the valve. Methods of creating a circular flow in a fluid flowing through a valve are also disclosed.

Abstract: A lever actuated pneumatic deadman valve for use in connection with pneumatic blasting equipment is ergonomically designed to reduce fatigue and strain on the operator. The valve is shaped to fit comfortably in the hand of the operator, with a spring biased lever hinged for action to fit the natural movement of the hand. A detent button is sized and positioned for easily accommodating single-handed operation. Another important feature of the deadman valve is the reconfiguration of the valve cartridge with an offset port to produce a cyclonic flow around the spool for reducing the wear on the spool.

Abstract: The slide type valve of the present invention has a structure in which a movable flowpath forming member is pressed toward a slidable sealing member by use of a spring member and in which the load of the slidable sealing member received from the movable flowpath forming member becomes equal to a constant spring load determined by a spring force of the spring member. Additionally, an attachment member holding the movable flowpath forming member that is movable to the fixed flowpath forming member has a housing hole whose shape substantially coinciding with the shape of the movable flowpath forming member. The movable flowpath forming member is housed in the housing hole so as to be slidable in a direction perpendicular to the first end surface of the fixed flowpath forming member, and, accordingly, the load distribution is uniformed both in a first seal sliding surface and in a second seal sliding surface of the slidable sealing member.

Abstract: A fluid dispenser valve comprising a valve body (10) containing a metering chamber (20), and a valve member (30) that slides in said valve body (10) between a rest position and a dispensing position, for selectively dispensing the content of said metering chamber (20), said metering chamber (20) being, in the rest position of the valve member (30), connected to a fluid reservoir containing the fluid to be dispensed via a fluid-flow passage (35, 35?), said valve member (30) including a radial support collar, said fluid-flow passage (35, 35?) passing, level with said collar (320), inside said valve member (30) and/or said collar (320), at least in part, so as to enable the metering chamber (20) to be filled by gravity when, in the rest position of the valve member (30), the valve is in an upsidedown position with the metering chamber (20) disposed below the reservoir, and so as to enable said metering chamber (20) to be emptied by gravity when, in the rest position of the valve member (30), the valve is in an u

Abstract: A method and apparatus for manufacturing magnetic storage media is provided. A structural substrate is coated with a magnetically active material, and a magnetic pattern is formed in the magnetically active material by treating portions of the material with energy from a laser, e-beam, or focused ion beam. The beam may be divided into a packet of beamlets by passing the beam through a divider, which may be a diffraction grating for laser energy, a thin film single crystal for electrons, or a perforated plate for ions, or the beam may be generated by an array of emitters. The beamlets are then focused to a desired dimension and distribution by optics or electric fields. The resulting beam packet may be shaped further by passing through an aperture of any desired shape. The resulting beam may be applied sequentially to exposure zones to treat an entire substrate or plurality of substrates.

Abstract: The present invention relates to nano structures of metal oxides having a nanostructured shell (or wall), and an internal space or void. Nanostructures may be nanoparticles, nanorod/belts/arrays, nanotubes, nanodisks, nanoboxes, hollow nanospheres, and mesoporous structures, among other nanostructures. The nanostructures are composed of polycrystalline metal oxides such as SnO2. The nanostructures may have concentric walls which surround the internal space of cavity. There may be two or more concentric shells or walls. The internal space may contain a core such ferric oxides or other materials which have functional properties. The invention also provides for a novel, inexpensive, high-yield method for mass production of hollow metal oxide nanostructures. The method may be template free or contain a template such as silica. The nanostructures prepared by the methods of the invention provide for improved cycling performance when tested using rechargeable lithium-ion batteries.

Abstract: A thermal storage device is provided which comprises at least one storage medium which is a multicomponent mixture having a melting range between the solid phase of the mixture and the liquid phase of the mixture extending over at least 10 K.

Abstract: An anode active material comprises metal core particles, metal nano wires formed on the metal core particles, pores between the metal core particles and the metal nano wires, and a carbon-based coating layer formed on a surface of the metal core particles and metal nano wires. In the anode active material according to the present invention, the metal core particles and metal nano wires are combined to form a single body, and a carbon-based coating layer is formed on the surface of the metal nano wires and metal core particles. Thus, volume changes in the pulverized metal core particles can be effectively buffered during charging and discharging, and the metal core particles are electrically connected through the metal nano wires. As a result, volume changes in the anode active material and degradation of the electrode can be prevented, thereby providing excellent initial charge/discharge efficiency and enhanced charge/discharge capacity.

Abstract: An aqueous polyurethane resin is prepared by reaction of an isocyanate group-terminated prepolymer with a chain extender containing polyamine. The isocyanate group-terminated prepolymer is obtained by reaction of at least a polyisocyanate containing 50 wt % or more of a non-multiple ring polyisocyanate that does not contain an aromatic ring and an aliphatic ring, or contains one aromatic ring or aliphatic ring; polyoxyethylene polyol; and a polyoxyethylene side chain-containing active compound having two or more hydroxyl groups or isocyanate groups at its molecular terminal and having a polyoxyethylene group in the side chain.

Abstract: The instant invention relates to mesogenic systems comprising a) a polymeric component, component A, obtained or obtainable from polymerisation of a precursor comprising one or more mesogenic mono-reactive compounds, one or more di-reactive compounds, which optionally are also mesogenic compounds and optionally a photo-initiator and a low molecular weight component, component B, comprising one or more mono-reactive, mesogenic compounds, one or more mesogenic compounds and one or more chiral dopants, exhibiting a Blue Phase, as well as to the use of these systems in deices and to these devices.

Abstract: A polymerizable liquid crystal compound shown by the following formula (I), a polymerizable liquid crystal composition that includes the polymerizable liquid crystal compound and a chiral compound polymerizable with the polymerizable liquid crystal compound, a liquid crystalline polymer obtained by polymerizing the polymerizable liquid crystal compound or the polymerizable liquid crystal composition, and an optical anisotropic article that includes the liquid crystalline polymer. The polymerizable liquid crystal compound shows a liquid crystal phase over a wider temperature range, is chemically stable, can be inexpensively produced, and has a wide selective reflection wavelength band ?? (i.e., a large value ?n).

Abstract: The racemic and chiral compounds expressed by common formula 1 and formula 2: wherein the lateral substituents X1, X2, X3, X4, X5, X6, X7 and X8 in the benzene rings represent independently hydrogen and fluorine atoms, bridge group Z represent independently the single bond or COO, CH2CH2, CH2O and OCH2 group, substituent Y represents CH3, or CH2F, CHF2, CF3, C2H5 group, symbols n, m, r and t are independently integers of 1 to 8; symbols p and s signify independently number of 0 to 1 and its orthoconic antiferroelectric long helical pitch mixtures prepared by the methods 1) to the racemic components selected from compounds 1 are added chiral components selected from the compound of formula 1 and/or chiral components selected from the compounds of formula 2 and/or another optically active compounds with high helical twisting power, 2) to chiral compound 1 which helical pitches increases with the temperature increase is added chiral compound 1 which helical pitch decreases with temperature increase.

Abstract: To provide a phosphor having an emission spectrum with a broad peak in a range from yellow color to red color (580 nm to 680 nm) and an excellent excitation band on the longer wavelength side from near ultraviolet/ultraviolet of excitation light to visible light (250 nm to 550 nm), and having an improved emission intensity. The phosphor is provided, which is given by a general composition formula expressed by MmAaBbOoNn:Z, (wherein element M is more than one kind of element having bivalent valency, element A is more than one kind of element having tervalent valency selected from the group consisting of Al, Ga, In, Tl, Y, Sc, P, As, Sb, and Bi, element B is more than one kind of element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is more than one kind of element selected from rare earth elements or transitional metal elements, satisfying m>0, a>0, b>0 o?0, and n=2/3m+a+4/3b?2/3o), and further containing boron and/or fluorine.

Abstract: A composite organic EL material suited to flash deposition and a method for producing the same are provided. A composite organic electroluminescence material in which an organic material and an organic metal complex are combined with each other, wherein the melting point of the organic material is lower by 30° C. or more than the decomposition temperature of the organic metal complex.

Abstract: Techniques for controlling resistivity in the formation of a silicon ingot from compensated feedstock silicon material prepares a compensated, upgraded metallurgical silicon feedstock for being melted to form a silicon melt. The compensated, upgraded metallurgical silicon feedstock provides semiconductor predominantly of a single type (p-type or n-type) for which the process assesses the concentrations of boron and phosphorus and adds a predetermined amount of boron, phosphorus, aluminum and/or gallium. The process further melts the silicon feedstock with the boron, phosphorus, aluminum and/or gallium to form a molten silicon solution from which to perform directional solidification and maintains the homogeneity of the resistivity of the silicon throughout the ingot. A balanced amount of phosphorus can be optionally added to the aluminum and/or gallium. Resistivity may also be measured repeatedly during ingot formation, and additional dopant may be added in response, either repeatedly or continuously.

Abstract: The present invention relates to optically variable pigments of high electrical conductivity which comprise a flake-form substrate, which essentially consists of silicon dioxide and/or silicon oxide hydrate, and an electrically conductive layer surrounding the substrate, to a process for the preparation thereof, and to the use of pigments of this type.

Abstract: A synchronous moving device includes: a device body; a movable portion which is provided in the device body; a feed screw shaft which is supported on the device body; a nut member which is thread-engaged with the feed screw shaft; a coupler which couples the movable portion and the nut member; and a cable binder which supports and guides a cable wired into the movable portion, wherein: the coupler includes a first member fixed to the movable portion, a second member fixed to the nut member, and an intermediate member interposed between the first and second members for absorbing deflecting motion of the feed screw shaft; and an end portion of the cable binder on a side of wiring of the cable into the movable portion is connected to the second member through a connection member and moved in synchronization with the movable portion.

Abstract: A wire pull assembly including a quick-change assembly and a wire pull attachment. The wire pull attachment includes an insert, a basket adapted to receive and secure an article therein, and a swivel assembly interconnecting the insert and basket such that the swivel assembly allows the basket to move freely relative to the insert.

Abstract: An apparatus for retensioning tendons in a concrete slab which has a stressing frame with a first leg having a top part and a bottom part, and a second leg having a top part and a bottom part, so that the top part of the first leg and the top part of the second leg, are pivotally connected; and so that the first leg further comprises a shaft and wherein the bottom part of the second leg further comprises a shaft; and second leg further comprises a contact point proximate to the bottom part of the second leg; so that the bar engagedly connects the first leg so that when the retractor is engaged, the bar is pulled and the contact point on the first leg and the contact point on the second leg are pulled inwards allowing the two pieces of rebar tendons to be connected.

Abstract: The invention relates to a drum winch (100) that is arranged to allow “free fall” of an anchor secured by rode to a drum (116) of the drum winch (100). The drum winch (100) includes a mounting bracket (112) and a drive shaft (114) arranged to be mounted to the mounting bracket (112) and coupled to the drive unit (118). The drum (116) is arranged relative to the drive shaft (1114) so that in a first mode of operation of the drum winch (100), the drum (116) can be rotated by rotation of the drive shaft (114). In a second mode of operation of the drum winch (100), the drum (116) is free to rotate relative to the drive shaft (114) so as to enable “free fall” of the anchor. The drum winch (100) further includes means for actuating (150) either the first mode of operation or the second mode of operation.

Abstract: A portable, lightweight lift system employing one or more lift assemblies that counters effects of staging is disclosed. The lift system includes multiple lift assemblies, wherein each assembly may be connected to a lifting device such as a hydraulic or motorized jack. A lifting device comprises moving parts which are nested such that the difference in diameters of each of the moving parts is minimized. In one aspect, the lifting device is provided with an arrangement of seals such that, the working area of a smaller diameter tube is greater than the working area of a larger diameter tube causing the smaller tube to move before the larger tube.

Abstract: Jack stands having support arms that automatically rise to meet lifted loads are disclosed herein. According to one embodiment, a jack stand includes a base having a collar, a support arm, a locking mechanism, and a lifting mechanism. The support arm is movable within the collar and has a plurality of teeth defining grooves and ridges. The locking mechanism has a handle and a stopper and is rotatably coupled to the base at an axis of rotation for movement between a first position where the stopper engages at least one of the grooves to restrict the support arm from moving downwardly, and a second position where the support arm is movable upwardly and downwardly. The lifting mechanism is coupled to the base and is in communication with the support arm to automatically raise the support arm relative to the collar when the locking mechanism is moved to the second position.

Abstract: A method of forming a phase-change random access memory (PRAM) cell and PRAM arrangement, and embodiments of phase-change random access memory (PRAM) cells and PRAM arrangements are disclosed. A phase-change random access memory (PRAM) cell includes a bottom electrode, a heater resistor coupled to the bottom electrode, a phase change material (PCM) coupled to the heater resistor, and a top electrode coupled to the phase change material. An active region between the heater resistor and the phase change material is defined by a thickness of the heater resistor.

Abstract: A method of forming a phase-change random access memory (PRAM) cell, and a structure of a phase-change random access memory (PRAM) cell are disclosed. The PRAM cell includes a bottom electrode, a heater resistor coupled to the bottom electrode, a phase change material (PCM) formed over and coupled to the heater resistor, and a top electrode coupled to the phase change material. The phase change material contacts a portion of a vertical surface of the heater resistor and a portion of a horizontal surface of the heater resistor to form an active region between the heater resistor and the phase change material.

Abstract: A resistive memory device includes a bottom electrode, a resistive layer formed over the bottom electrode and having a structure in which a first resistive layer having an amorphous phase and a second resistive layer having a polycrystal phase are sequentially stacked, and a top electrode formed over the second resistive layer.

Abstract: A nonvolatile memory device of the present invention includes a substrate (1), first wires (3), first resistance variable elements (5) and lower electrodes (6) of first diode elements which are filled in first through-holes (4), respectively, second wires (11) which cross the first wires 3 perpendicularly to the first wires 3, respectively, and each of which includes a semiconductor layer (7) of a first diode elements, a conductive layer (8) and a semiconductor layer (10) of a second diode elements which are stacked together in this order, second resistance variable elements (16) and upper electrodes (14) of second diode elements which are filled into second through holes (13), respectively, and third wires (17), and the conductive layer (8) of each second wires (11) also serves as the upper electrode of the first diode elements (9) and the lower electrode of the second diode elements (15).

Abstract: Provided are a Phase-change Random Access Memory (PRAM) device and a method of manufacturing the same. In particular, a PRAM device including a heating layer, wherein the heating layer comprises first and second heating layers having different physical properties from each other and a method of manufacturing the same are provided. Since the PRAM device according to the present invention includes a heating layer having optimal heating characteristics, a PRAM device having high reliability and excellent operating characteristics can be manufactured.

Abstract: A resistive switching memory element including a doped silicon electrode is described, including a first electrode comprising doped silicon having a first work function, a second electrode having a second work function that is different from the first work function by between 0.1 and 1.0 electron volts (eV), a metal oxide layer between the first electrode and the second electrode, the metal oxide layer switches using bulk-mediated switching and has a bandgap of greater than 4 eV, and the memory element switches from a low resistance state to a high resistance state and vice versa.

Abstract: Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode comprising hafnium oxide and having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a material including metal titanium and having a second thickness that is less than 25 percent of the first thickness.

Abstract: A semiconductor memory device includes a plurality of memory cell arrays each includes a plurality of memory cells, the plurality of memory cell arrays being stacked on a semiconductor substrate to form a three-dimensional structure, a first well formed in the semiconductor substrate and having a first conductivity type, an element isolation insulating film including a bottom surface shallower than a bottom surface of the first well in the first well, and buried in the semiconductor substrate, a second well including a bottom surface shallower than the bottom surface of the first well in the first well, formed along a bottom surface of at least a portion of the element isolation insulating film, and made of an impurity having a second conductivity type, and a contact line electrically connected to the first well.

Abstract: A cavity free, broadband approach for engineering photon emitter interactions via sub-wavelength confinement of optical fields near metallic nanostructures. When a single CdSe quantum dot (QD) is optically excited in close proximity to a silver nanowire (NW), emission from the QD couples directly to guided surface plasmons in the NW, causing the wire's ends to light up. Nonclassical photon correlations between the emission from the QD and the ends of the NW demonstrate that the latter stems from the generation of single, quantized plasmons. Results from a large number of devices show that the efficient coupling is accompanied by more than 2.5-fold enhancement of the QD spontaneous emission, in a good agreement with theoretical predictions.

Abstract: Fabrication of metallic or non-metallic wires with nanometer widths and nanometer separation distances without the use of lithography. Wires are created in a two-step process involving forming the wires at the desired dimensions and transferring them to a planar substrate. The dimensions and separation of the wires are determined by the thicknesses of alternating layers of different materials that are in the form of a superlattice. Wires are created by evaporating the desired material onto the superlattice that has been selectively etched to provide height contrast between layers. The wires thus formed upon one set of superlattice layers are then transferred to a substrate.

Abstract: Self-assembled organic monolayers on epitaxial graphene are described. The organic molecules are perylene derivatives including 3,4,9,10-perylene-tetracarboxylic dianhydride (PTCDA) molecules arranged in a herringbone phase and/or molecules are of the following formula: wherein R1 and R2 are alkyl groups. The organic monolayers can be patterned. Metal oxides can also be deposited on the organic monolayers. Methods of forming the self-assembled organic monolayers are also described.

Abstract: Provided is a field effect transistor including a graphene channel layer, and capable of increasing an on/off ratio of an operating current by using the graphene of the graphene channel layer. The field effect transistor includes: a substrate; the graphene channel layer which is disposed on a portion of the substrate and includes graphene; a first electrode disposed on a first region of the graphene channel layer and a portion of the substrate; an interlayer disposed on a second region of the graphene channel layer, which is apart from the first region, and a portion of the substrate; a second electrode disposed on the interlayer; a gate insulation layer disposed on a portion of the graphene channel layer, the first electrode, and the second electrode; and a gate electrode disposed on a portion of the gate insulation layer.

Abstract: The present invention relates to novel compounds and polymers, compositions comprising novel compounds or polymers, and electronic devices comprising at least one layer containing the compound or polymer.

Abstract: The present invention provides an EL device that contains a quantum-dots-containing layer in which quantum dots hardly coagulate even under high-temperature conditions, e.g., at a temperature of 90° C. or more, that has a good performance even if heat treatment was carried at a high temperature in its production process, that can retain its emission characteristics for a prolonged period of time, and that has high durability. An electroluminescent device comprises a pair of electrodes, and an electroluminescent layer containing at least a luminescent layer, situated between the electrodes. The luminescent layer contains quantum dots whose surfaces are protected by one or more protective materials. At least one of the protective materials has a glass transition temperature and a melting point of 90° C. or more.

Abstract: The present invention relates to an organic light-emitting diode comprising at least one diphenylaminobis(phenoxy)triazine or at least one bis(diphenylamino)phenoxytriazine compound, to a light-emitting layer comprising at least one diphenylamino-bis(phenoxy)triazine or at least one bis(diphenylamino)phenoxytriazine compound, to the use of the aforementioned compounds as a matrix material, hole/exciton blocker material, electron/exciton blocker material, hole injection material, electron injection material, hole conductor material and/or electron conductor material, and to a device selected from the group consisting of stationary visual display units, mobile visual display units and illumination units comprising at least one inventive organic light-emitting diode.

Abstract: An organic electroluminescence device includes: a cathode; an anode; and an organic thin-film layer including at least one layer and provided between the cathode and the anode. At least one layer of the organic thin-film layer includes: an organic-electroluminescence-device material represented by any one of the following formulae (1), (2) and (3); and at least one phosphorescent material, in which the organic-electroluminescence-device material may have a substituent. A or Ar may be substituted by a phenyl group or a naphthyl group.

Abstract: It is an object of the present invention to provide a light emitting element with a low driving voltage. In a light emitting element, a first electrode; and a first composite layer, a second composite layer, a light emitting layer, an electron transporting layer, an electron injecting layer, and a second electrode, which are stacked over the first electrode, are included. The first composite layer and the second composite layer each include metal oxide and an organic compound. A concentration of metal oxide in the first composite layer is higher than a concentration of metal oxide in the second composite layer, whereby a light emitting element with a low driving voltage can be obtained. Further, the composite layer is not limited to a two-layer structure. A multi-layer structure can be employed. However, a concentration of metal oxide in the composite layer is gradually higher from the light emitting layer to first electrode side.

Abstract: A solution composition for forming an oxide thin film may include a first compound including zinc, a second compound including indium, and a third compound including magnesium or hafnium, and an electronic device may include an oxide semiconductor including zinc, indium, and magnesium. The zinc and hafnium may be included at an atomic ratio of about 1:0.01 to about 1:1.

Abstract: A field effect transistor is provided including a gate electrode (15), a source electrode (13), a drain electrode (14) and a channel layer (11) to control current flowing between the source electrode (13) and the drain electrode (14) by applying a voltage to the gate electrode (15). The channel layer (11) is constituted of an amorphous oxide containing In and Si and having a compositional ratio expressed by Si/(In+Si) of not less than 0.05 and not more than 0.40.

Abstract: Disclosed is a method of manufacturing a ZnO-based semiconductor device having at least p-type ZnO-based semiconductor layer, which includes a step of forming a contact metal layer on the p-type ZnO-based semiconductor layer wherein the contact metal layer contains at least one of Ni and Cu; and a step of performing heat treatment of the contact metal layer and the p-type ZnO-based semiconductor layer under an oxygen-free atmosphere to form a mixture layer including elements of the p-type ZnO-based semiconductor layer and the contact metal layer at a boundary region therebetween while maintaining a metal phase layer on a surface of the contact metal layer.

Abstract: Disclosed is a method of manufacturing a ZnO-based semiconductor device, the method includes a first metal layer formation step of forming a first metal layer on a p-type ZnO-based semiconductor layer in island-form and/or mesh-form; a heat treatment step of performing heat treatment of the first metal layer and the p-type ZnO-based semiconductor layer under an oxygen-free atmosphere to form a mixture layer comprising elements of the p-type ZnO-based semiconductor layer and the first metal layer at a boundary region therebetween while maintaining a metal phase layer on a surface of the first metal layer; and a second metal layer formation step of forming a second metal layer so as to cover the first metal layer and the exposed portions of the p-type ZnO-based semiconductor layer through openings of the first metal layer.

Abstract: An organic electroluminescent device is provided, including at least one light emitting layer 5 composed of an organic material between a transparent electrode and a counter electrode, wherein the organic electroluminescent device includes an electron injection layer 6 previously provided on the organic layer side of the counter electrode which is contact disposed in a solid plate form on the organic layer and heat and pressure formed, and the electron injection layer 6 is constituted of a metal oxide. According to this configuration, it is possible to heat soften the counter electrode in a fixed plate form and join it, and it is possible to inexpensively manufacture the organic electroluminescent device 1 with ease.

Abstract: An integrated circuit includes a functional block having a plurality of standard cells. The plurality of standard cells includes a plurality of functional standard cells and a filler standard cell. Each functional standard cell of the plurality of functional standard cells has a rectangular boundary. The filler standard cell has a rectangular boundary adjacent to at least one of the functional standard cells. The filler standard cell is selectable between a first state and a second state. The filler standard cell is non-functional in the first state. The filler standard cell has functional test structures coupled to a first metal layer in the second state. This allows for test structures helpful in analyzing functionality of circuit features such as transistors without requiring additional space on the integrated circuit.

Abstract: A bipolar transistor at least includes a semiconductor substrate including an N? epitaxial growth layer and a P? silicon substrate, an N+ polysilicon layer, a tungsten layer, two silicide layers, a base electrode, an emitter electrode, and a collector electrode. The N+ polysilicon layer formed on the semiconductor substrate is covered with one of the silicide layers. The tungsten layer that is formed on the silicide layer is covered with the other silicide layer.

Abstract: A fabricating method of a semiconductor stacking layer includes following steps. First, an amorphous silicon (a-Si) layer is formed on a substrate. Surface treatment is then performed on a surface of the a-Si layer. After that, a doped microcrystalline silicon (?c-Si) layer is formed on the treated surface of the a-Si layer, wherein interface defects existing between the a-Si layer and the doped ?c-Si layer occupy an area in a cross-sectional region having a width of 1.5 micrometers and a thickness of 40 nanometers, and a ratio of the occupied area in the cross-sectional region is equal to or less than 10%. The method of fabricating the semiconductor stacking layer can be applied to a fabrication process of a semiconductor device to effectively reduce the interface defects of the semiconductor stacking layer.