Abstract: In the present invention, provided is an organic electroluminescent element material having a high externally taking-out quantum efficiency, which is suitable for manufacturing an element exhibiting long light emission lifetime, and also provided is an organic electroluminescent element possessing the material, a method of manufacturing the organic electroluminescent element, and a display as well as an illuminating device fitted with the organic electroluminescent element.

Abstract: Matrixes doped with semiconductor nanocrystals are provided. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes are optionally formed from the ligands. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. Processes for producing matrixes comprising semiconductor nanocrystals are also provided.

Abstract: The invention relates to a polymer comprising structural unit of formula II: wherein R1, R2, R3, R4, R5, R6 and R7 are independently at each occurrence a C1-C20 aliphatic radical, a C3-C20 aromatic radical, or a C3-C20 cycloaliphatic radical; a, b, d, e and f are independently at each occurrence 0, or an integer ranging from 1 to 4; c and g are independently at each occurrence 0, or an integer ranging from 1 to 3. In another aspect, the invention relates to monomers for preparing the polymers. In yet another aspect, the invention relates to an optical electronic device comprising a polymer comprising structural unit of formula II.

Abstract: A method and an apparatus for separating acidic gases from syngas are capable of reducing the necessary power and are capable of obtaining high-purity CO2 at a high recovery ratio. A purification method and a purification system of coal gasification gas using the method and the apparatus are also provided. A apparatus for separating acidic gases from syngas containing acidic gases of CO2 and H2S, in order, converts CO in the syngas into CO2, removes H2S contained in the syngas by using a solvent for physical absorption, and removes CO2 from the syngas by using a solvent for chemical absorption.

Abstract: Syngas is formed by combining a carbon source with steam at an elevated temperature in a generally horizontal reactor. The heat for the reaction is provided by a stoichiometric combustion nozzle at a first end of the horizontal reaction chamber. The carbon source is deposited downwardly into the reaction chamber where it combines with a flowing stream of hot gas formed from the stoichiometric combustion in combination with steam and additional oxygen, if necessary. This flowing stream of gas reacts with the deposited carbon feed source and is directed to a cyclone separator where the formed syngas is recovered from an upper portion of the separator and any formed ash is directed into a collection tank.

Abstract: A temperature indicating paint comprises 4 wt % to 40 wt % sodium alumino sulpho silicate, 1 wt % to 38 wt % nickel antimony titanate and the binder comprises 25 wt % to 50 wt % silicone resin 10 wt % to 30 wt % acrylic resin each excluding solvent. This composition undergoes colour changes occur, these are; Blue 520-560° C.; Light Blue 950-990° C.; Light Yellow 1000-1040° C.; Glazed Black 1160-1200° C. The colour changes are particularly distinct and enable accurate analysis particularly, but not exclusively, in gas turbine engines.

Abstract: Disclosed is a composition which is characterized by obtained by bringing an adsorbent into contact with a composition containing a fullerene derivative and a solvent.

Abstract: Process for producing nitrogen-doped carbon nanotubes (NCNTs) in a fluidized bed.

Abstract: An adhesive material comprising at least one adhesive polymeric resin, at least one low aspect ratio metal-coated additive, and at least one high aspect ratio metal-coated additive. There is additionally provided an adhesive material comprising at least one adhesive polymeric resin, and one of either; a) low aspect ratio metal-coated additives present in the range 0.2 wt. % to 30 wt. % of the adhesive material; or b) discrete high aspect ratio metal-coated additives present in the range 0.2 wt. % to 25 wt. % of the adhesive material.

Abstract: A solid body of a metal alloy comprising less than 99% by weight of noble metal and more than 1% by weight of dispersion-strengthening metals is converted for production of a dispersion-strengthened platinum material by at least 90% oxidation of the dispersion-strengthening metals into a dispersion-strengthened platinum material. The dispersion-strengthened platinum material contains a noble metal component and a dispersion-strengthening agent, the proportion by mass of the noble metal component amounting to between 95 and 99% by weight and the noble metal component of platinum or a platinum alloy including at least 55% by weight Pt, 0 to 30% by weight Rh, 0 to 30% by weight Au, and 0 to 40% by weight Pd. The remaining proportion by mass of more than 1% by weight is a dispersion-strengthening agent, which contains at least one metal oxidized at least 90% by weight with oxygen, the metal being selected from the group of Ce, Zr, Sc, and Y.

Abstract: There is disclosed a silver powder comprising silver particles, each said silver particle comprising silver components 100-500 nm long, 80-100 nm wide, and 80-100 nm thick, assembled on the surface of silver to form a spherically-shaped, open structured particle, wherein the surface of the particle resembles the surface of an orange rind and the d50 particle size is from about 2.5 ?m to about 6 ?m. Also disclosed is a process for making these silver particles. The silver particles formed are particularly useful in electronic applications.

Abstract: The invention provides a compound of silver nanowire with polymer. The compound comprises a resin, a dispersant, and a plurality of silver nanowires. The dispersant is capable of copolymerizing with the resin. The dispersant has a plurality of functional groups capable of connecting with the silver nanowires respectively. Therefore, the silver nanowires could disperse in the resin by means of the functional groups of the dispersant.

Abstract: A process for producing a metallic-nanoparticle inorganic composite 10 includes an oxide film formation step in which an oxide film 14 having micropores is formed on a substrate by a sol-gel method in which a metal alkoxide is partly hydrolyzed by the action of an acid catalyst, a tin deposition step in which the oxide film 14 is brought into contact with an acidic aqueous solution of tin chloride, an excess Sn2+ ion removal step in which Sn2+ ions are removed from the micropores, a metallic-nanoparticle deposition step in which the oxide film 14 is brought into contact with an aqueous solution of a metal chelate to deposit metallic nanoparticles 12 in the micropores, and an excess metal ion removal step in which metal ions are removed from the micropores; and a metallic-nanoparticle inorganic composite 10 is produced by this process.

Abstract: A device in the form of a fabric tape (13) or a rope (14) is used to pull a cable or the like into a conduit (10). A plurality of spaced plastic buttons (16) are attached to at least one side of the tape (13) or spaced plastic rings (19) are attached to the rope (14). Thus, the buttons (16) or rings (19) have a coefficient of friction less than that of the tape (13) or rope (14), respectively, and present a smaller outer surface area than the tape (17) or rope (14) so that the tape (13) or rope (14) can more easily pull the cable into the conduit (10).

Abstract: A method and apparatus for leveling travel trailers is provided by placing a first pair of remotely operable jacks at the lower front corners of the trailer, placing a left and right pair of remotely operable jacks on each side of the trailer close to the axle hangers, mounting front to back and side to side level sensor on the trailer, and then operating the first pair of jacks to elevate the trailer when disconnecting the trailer from the towing vehicle and establishing a front to back level status by reference to the sensor output and then operating the left and/or right pair of jacks to establish a side to side level status by reference to the sensor output.

Abstract: A livestock guard. The livestock guard may include a rectangular base frame. Two vertical posts may be attached to the rectangular base frame. There may be a pivot bar centrally and longitudinally oriented within the rectangular base frame. There may be two livestock guard ramps within the rectangular base frame and pivotally attached to the pivot bar in such a way as to decline away from the pivot bar in opposite directions. The pivot bar may be supported at each end by a spring assembly housed in one of the vertical post members. The pivot bar may be supported in such a way as to normally rest at a predetermined height above the rectangular base frame and also in such a way as to be depressible to the height of the rectangular base frame when pressed under a certain weight.

Abstract: An integrally formed rail for use with a fence panel. The rail is formed to define a top platform, first and second side walls, and a bottom platform. The side walls extend from the top platform and past the bottom platform. The top platform and the bottom platform define the boundaries of a rail channel. The top platform and the bottom platform define picket openings. The rail is formed by extruding the platforms and side walls from an extrudable material such as aluminum. The picket openings can be formed by inserting a mandrel in the rail channel and stamping the openings. Fence pickets are inserted through the picket openings to construct the fence panel. A retaining rod is inserted in the rail channel and through openings in the pickets to retain the pickets in the panel.

Abstract: Memory cells described herein have an increased current density at lateral edges of the active region compared to that of conventional mushroom-type memory cells, resulting in improved operational current efficiency.

Abstract: The present invention discloses a memory system comprising a plurality of crystals, and at least two conductors. The at least two conductors being orthogonal to each other. Wherein at least one of the plurality of crystals are bounded by the orthogonal intersection of the at least two conductors.

Abstract: Some embodiments include devices that contain bundles of CNTs. An undulating topography extends over the CNTs and within spaces between the CNTs. A global maximum lateral width is defined as the greatest lateral width of any of the spaces. A material is directly over the CNTs, with the material being a plurality of particles that have minimum cross-sectional equatorial widths exceeding the global maximum lateral width. Some embodiments include methods in which a plurality of crossed carbon nanotubes are formed over a semiconductor substrate. The CNTs form an undulating upper topography extending across the CNTs and within spaces between the CNTs. A global maximum lateral width is defined as the greatest lateral width of any of the spaces. A material is deposited over the CNTs, with the material being deposited as particles that have minimum cross-sectional equatorial widths exceeding the global maximum lateral width.

Abstract: A method of producing a multilayer structure is provided, wherein the method comprises forming a phase change material layer onto a substrate, forming a protective layer, forming a further layer on the protective layer, patterning the further layer in an first 5 patterning step, patterning the protective layer and the phase change material layer by a second patterning step. In particular, the first patterning step may be an etching step using chemical etchants. Moreover, electrodes may be formed on the substrate before the phase change material layer is formed, e.g. the electrodes may be formed on one level, e.g. may forma planar structure and may not form a vertically structure.

Abstract: A memory device comprises first and second electrodes with a memory element and a buffer layer located between and electrically coupled to them. The memory element comprises one or more metal oxygen compounds. The buffer layer comprises at least one of an oxide and a nitride. Another memory device comprises first and second electrodes with a memory element and a buffer layer, having a thickness of less than 50 ?, located between and electrically coupled to them. The memory comprises one or more metal oxygen compounds. An example of a method of fabricating a memory device includes forming first and second electrodes. A memory, located between and electrically coupled to the first and the second electrodes, is formed; the memory comprises one or more metal oxygen compounds and the buffer layer comprises at least one of an oxide and a nitride.

Abstract: A three-dimensional phase-change memory array. In one embodiment of the invention, the memory array includes a first plurality of diodes, a second plurality of diodes disposed above the first plurality of diodes, a first plurality phase-change memory elements disposed above the first and second plurality of diodes and a second plurality of memory elements disposed above the first plurality of memory elements.

Abstract: A memory cell is provided that includes a diode and a resistance-switching material layer coupled in series with the diode. The resistance-switching material layer: (a) has a dielectric constant in the range of about 5 to about 27, and (b) includes a material from the family consisting of XvOw, wherein X represents an element from the family consisting of Hf and Zr, and wherein the subscripts v and w have non-zero values that form a stable compound. Other aspects are also provided.

Abstract: Devices, methods, and techniques for frequency-dependent optical switching are provided. In one embodiment, a device includes a substrate, a first and a second optical-field confining structures located on the substrate, and a quantum structure disposed between the first and the second optical-field confining structures. The first optical-field confining structure may include a surface to receive photons. The second optical-field confining structure may be spaced apart from the first optical-field confining structure. The first and the second optical-field confining structures may be configured to substantially confine therebetween an optical field of the photons.

Abstract: A junctionless metal-oxide-semiconductor transistor is described. In one aspect, a transistor device comprises a semiconductor material. The semiconductor material comprises first, second, and third portions. The second portion is located between the first and third portions. The first, second, and third portions are doped with dopants of the same polarity and the same concentration. The transistor device further comprises an electrode connected to the second portion. A current flows between the first and third portions when a voltage is applied to the electrode.

Abstract: In a GaN based semiconductor optical device 11a, the primary surface 13a of the substrate 13 tilts at a tilting angle toward an m-axis direction of the first GaN based semiconductor with respect to a reference axis “Cx” extending in a direction of a c-axis of the first GaN based semiconductor, and the tilting angle is 63 degrees or more, and is less than 80 degrees. The GaN based semiconductor epitaxial region 15 is provided on the primary surface 13a. On the GaN based semiconductor epitaxial region 15, an active layer 17 is provided. The active layer 17 includes one semiconductor epitaxial layer 19. The semiconductor epitaxial layer 19 is composed of InGaN. The thickness direction of the semiconductor epitaxial layer 19 tilts with respect to the reference axis “Cx.” The reference axis “Cx” extends in the direction of the [0001] axis. This structure provides the GaN based semiconductor optical device that can reduces decrease in light emission characteristics due to the indium segregation.

Abstract: Various embodiments provide thin-walled structures and methodologies for their formation. In one embodiment, the thin-walled structure can be formed by disposing a semiconductor material in a patterned aperture using a selective growth mask that includes a plurality of patterned apertures, followed by a continuous growth of the semiconductor material using a pulsed growth mode. The patterned aperture can include at least one lateral dimension that is small enough to allow a threading defect termination at sidewall(s) of the formed thin-walled structure. In addition, high-quality III-N substrate structures and core-shell MQW active structures can be formed from the thin-walled structures for use in devices like light emitting diodes (LEDs), lasers, or high electron mobility transistors (HEMTs).

Abstract: A method of producing a layered semiconductor device comprises the steps of: (a) providing a base comprising a plurality of semiconductor nano-structures, (b) growing a semiconductor material onto the nano-structures using an epitaxial 5 growth process, and (c) growing a layer of the semiconductor material using an epitaxial growth process.

Abstract: The present disclosure generally relates to techniques for controlled quantum dot growth as well as a quantum dot structures. In some examples, a method is described that includes one or more of providing a substrate, forming a defect on the substrate, depositing a layer on the substrate and forming quantum dots along the defect.

Abstract: A nonvolatile memory electronic device including nanowire channel and nanoparticle-floating gate nodes, in which the nonvolatile memory electronic device, which comprises a semiconductor nanowire used as a charge transport channel and nanoparticles used as a charge trapping layer, is configured by allowing the nanoparticles to be adsorbed on a tunneling layer deposited on a surface of the semiconductor nanowire, whereby charge carriers moving through the nanowire are tunneled to the nanoparticles by a voltage applied to a gate, and then, the charge carriers are tunneled from the nanoparticles to the nanowire by the change of the voltage that has been applied to the gate, whereby the nonvolatile memory electronic device can be operated at a low voltage and increase the operation speed thereof.

Abstract: An integrated circuit structure includes a substrate; a channel layer over the substrate, wherein the channel layer is formed of a first III-V compound semiconductor material; a highly doped semiconductor layer over the channel layer; a gate dielectric penetrating through and contacting a sidewall of the highly doped semiconductor layer; and a gate electrode on a bottom portion of the gate dielectric. The gate dielectric includes a sidewall portion on a sidewall of the gate electrode.

Abstract: A nanodevice is disclosed. The nanodevice comprises: a drain region, a source region opposite to the drain region and being separated therefrom at least with a trench, and a gate region, isolated from the drain and the source regions and from the trench. The trench has a height which is between 1 nm and 30 nm.

Abstract: A photoelectric device includes a photoelectric conversion layer containing an organic compound having a partial structure represented by the following formula (I) : wherein R2 and R3 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an aryl group, or a heterocyclic group.

Abstract: A pixel for an organic light emitting diode (OLED) display and a method for forming such a pixel is provided. The pixel includes a substrate, a transistor formed over the substrate, and an OLED formed over the substrate. The transistor includes a gate, a source, and a drain. The OLED includes an anode, an emissive layer formed over the anode, and a cathode formed over the emissive layer. The cathode is electrically connected to the drain of the transistor.

Abstract: An organic electroluminescent device includes: a pair of electrodes including a positive electrode and a negative electrode, at least one of the electrodes being transparent or semi-transparent; and an organic compound layer including one or more layers interposed between the pair of electrodes, at least one layer included in the organic compound layer containing one or more compounds represented by the following formula (I): in formula (I), R1s each independently representing a linear alkyl, linear alkoxy, branched alkyl, or branched alkoxy group having from 3 to 20 carbon atoms; and R2s each independently representing a hydrogen atom, a linear alkyl group having from 1 to 20 carbon atoms, a linear alkoxy group having from 1 to 20 carbon atoms, a branched alkyl group having from 3 to 20 carbon atoms, or a branched alkoxy group having from 3 to 20 carbon atoms.

Abstract: Disclosed is an organic compound that easily dissolves in an organic solvent, and that is applicable as a host material of an emission layer of an organic photoelectric device since it emits fluorescence and phosphorescence at a red wavelength through a blue wavelength. The organic compound according to one embodiment of the present invention is represented by Chemical Formula 1. In the above Chemical Formula 1, X1 to X24, Ar1 to Ar3, and Ar? to Ar??, and Chemical Formulae 2 to 5, are as described in the specification. The organic compound easily dissolves in an organic solvent, and is applicable as a host material of an emission layer of an organic photoelectric device since it emits fluorescence and phosphorescence at a red wavelength through a blue wavelength.

Abstract: An organic light-emitting device comprising an anode; a hole transport layer; a light-emitting layer; and a cathode, characterised in that the hole transport layer comprises a polymer having a repeat unit comprising a 9,9 biphenyl fluorene unit wherein the 9-phenyl rings are independently and optionally substituted and the fluorene unit is optionally fused.

Abstract: Disclosed is a light emitting device including a pair of electrodes at least one of which is transparent or semi-transparent, and a phosphor layer arranged between the pair of electrodes. The phosphor layer contains phosphor particles dispersed therein, and conductive nano particles are interposed at the interface between the phosphor layer and one of the electrodes. Also disclosed is another light emitting device including a pair of electrodes at least one of which is transparent or semi-transparent, and a phosphor layer arranged between the pair of electrodes. In this light emitting device, the phosphor layer contains phosphor particles dispersed therein, and at least one of the pair of electrodes is provided with a brush-like electrode projecting towards the phosphor layer. The brush-like electrode may be provided on the electrode on the positive electrode side, and the brush-like electrode provided on the electrode on the positive electrode side may preferably have a work function of 4.5 eV or more.

Abstract: An image display panel includes a gate electrode; a gate insulating film over the gate electrode; a source electrode, a drain electrode, and a first adhesive on the gate insulating film; an organic semiconductor layer on the source and drain electrodes including a space; an interlayer insulating film covering the gate insulating film, source electrode, organic semiconductor layer, and part of the drain electrode; a conductive layer on the interlayer insulating film; a second adhesive formed over the interlayer insulating film and conductive layer; an image display medium on the second adhesive; an inorganic film on the image display medium and first adhesive; and a second substrate on the inorganic film, where the first adhesive is arranged outside the second adhesive between the display medium and the conductive layer, and forms bonding between the inorganic film and the gate insulating film having a hydrophilic treatment formed on the first substrate.

Abstract: Disclosed is an organic light-emitting device (OLED), wherein a lower electrode, an organic emitting unit, an upper electrode, and a light enhance layer are subsequently formed between a bottom substrate and a top substrate. The light enhance layer has higher refractive index, between 2 and 3, than that of the top substrates, thereby efficiently improving the luminance intensity of the OLED.

Abstract: There are provided an organic electroluminescent transfer medium, an organic electroluminescent transfer object, and a production process of an organic electroluminescent device using the organic electroluminescent transfer medium or the organic electroluminescent transfer object, in which a pattern can be transferred from an organic electroluminescent transfer medium onto an organic electroluminescent transfer object at a relatively low temperature in a simple manner. The organic electroluminescent transfer medium comprises at least a support, a release layer provided on the support, and an organic electroluminescent transfer layer provided on the release layer. A transfer surface, which is the surface of the organic electroluminescent transfer layer side, is formed of a pattern transfer layer capable of forming a pattern based on a difference in adhesiveness and/or wettability.

Abstract: Provided are an organic semiconductor structure and a method of manufacturing the same, an organic thin film transistor (OTFT) using the organic semiconductor structure and a method of manufacturing the OTFT, and a display apparatus using the same.

Abstract: An Organic Light Emitting Display (OLED) and its fabrication method has a pixel defining layer provided on a first electrode which is formed with a gas vent groove to allow gas to vent when the pixel defining layer is being formed, so that gas is not left in a pixel but vented when a donor film is laminated by a Laser-Induced Thermal Imaging (LITI) method, thereby decreasing edge open failures.

Abstract: A display device includes an insulating substrate; a plurality of gate wires formed on the insulating substrate, the plurality of gate wires including a gate electrode; a gate insulating layer covering the plurality of gate wires; a transparent electrode layer formed on the gate insulating layer, the transparent electrode layer including a source electrode and a drain electrode disposed about the gate electrode and spaced apart from each other to define a channel region disposed therebetween; a plurality of data wires covering a predetermined portion of the transparent electrode layer and being crossed insulatedly with the plurality of gate wires to define pixels; and an organic semiconductor layer formed on the channel region for each pixel, a predetermined portion of the organic semiconductor layer being operatively connected with the source electrode, the drain electrode, and the gate electrode to form a transistor having an improved characteristic and a novel structure.

Abstract: An oxide semiconductor thin-film transistor, comprising: a source electrode and a drain electrode formed on a substrate; a composite semiconductor active layer formed between the source electrode and the drain electrode; a gate dielectric layer formed on the source electrode, the composite semiconductor active layer and the drain electrode; and a gate electrode formed on the gate dielectric layer and corresponding to the composite semiconductor active layer; wherein the composite semiconductor active layer comprises a low carrier-concentration first oxide semiconductor layer and a high carrier-concentration second oxide semiconductor layer.

Abstract: Provided are an oxide semiconductor and an oxide thin film transistor including the oxide semiconductor. The oxide semiconductor may be formed of an indium (In)-zinc (Zn) oxide in which hafnium (Hf) is contained, wherein In, Zn, and Hf are contained in predetermined or given composition ratios.

Abstract: The present invention provides a rectifier element that has a titanium oxide layer interposed between first and second electrodes containing a transition metal with an electronegativity larger than that of Ti, wherein, in the titanium oxide layer, only the interface on the side facing any one of the electrodes has a stoichiometric composition, and wherein the average composition of the whole layer is represented by the formula TiOx (wherein x satisfies the relationship 1.6?x<2), and wherein the rectifying characteristics can be reversed by applying a reverse electrical signal that exceeds the critical reverse electric power between the first and second electrodes in an opposite direction. The present invention also provides a process for producing a rectifier element, which includes the steps of depositing a first electrode that contains a transition metal with an electronegativity larger than that of Ti on a substrate; depositing a layer of titanium oxide (TiOx, wherein x satisfies the relationship 1.

Abstract: An amorphous oxide at least includes: at least one element selected from the group consisting of In, Zn, and Sn; and Mo. An atomic composition ratio of Mo to a number of all metallic atoms in the amorphous oxide is 0.1 atom % or higher and 5 atom % or lower.

Abstract: A thin film transistor (TFT) substrate and a method of fabricating the same are provided. The thin film transistor substrate may have low resistance characteristics and may have reduced mutual diffusion and contact resistance between an active layer pattern and data wiring. The thin film transistor substrate may include gate wiring formed on an insulating substrate. Oxide active layer patterns may be formed on the gate wiring and may include a first substance. Data wiring may be formed on the oxide active layer patterns to cross the gate wiring and may include a second substance. Barrier layer patterns may be disposed between the oxide active layer patterns and the data wiring and may include a third substance.