Abstract: One or more embodiments are directed to a resistance bridge measurement circuit configured to perform an internal self-check. The resistance bridge measurement circuit may include two or more internal resistors. In one embodiment, the resistance bridge measurement circuit may be configured to measure a first voltage across one of the resistors and a second voltage across a combination of the two resistors. The measured voltages may be converted to a resistance ratio and compared to an expected value. In another embodiment, the resistance bridge measurement circuit may be configured to measure a third voltage across the other of the two resistors and a fourth voltage across a combination of the two resistors. The measured voltages may be converted to corresponding resistance ratios, summed and compared to an expected value.

Abstract: One or more embodiments are directed to a resistance bridge having two voltage measurements circuits that function in tandem. In one embodiment, a constant current source may be applied to two resistors coupled in series, in which the first resistor has a known resistance and the second resistor has a resistance to be determined or verified. A first measurement circuit may measure a first voltage across the first resistor and at substantially the same time a second measurement circuit measures a second voltage across the second resistor. The voltage of each resistor is converted to a ratio. Based on the ratio and the resistance of the first resistance, the resistance of the second resistor may be calculated.

Abstract: Special test circuitry in an IC for wafer level testing selectively connects the specialized test circuitry to the functional circuitry during wafer test. Following wafer test the special test circuitry is electrically isolated from the functional circuitry and power supplies such that it does not load functional circuit signals nor consume power.

Abstract: Provided is a method of de-embedding. The method includes forming a test structure having a device-under-test embedded therein, the test structure having left and right pads coupling the device-under-test, the device-under-test dividing the test structure into left and right half structures, the left and right half structures each having intrinsic transmission parameters; forming a plurality of dummy test structures, each dummy test structure including a left pad and a right pad; measuring transmission parameters of the test structure and the dummy test structures; and deriving intrinsic transmission parameters of the device-under-test using the intrinsic transmission parameters of the left and right half structures and the transmission parameters of the test structure and the dummy test structures.

Abstract: The present invention dicloses test sockets fabricated by MEMS technology for testing of semiconductor devices. Semiconductor device test sockets fabricated by MEMS technology in accordance with one or more embodiments of the invention offer many unique advantages over conventional test sockets (e.g. sockets utilizing pogo-pins). In one embodiment of the invention, a novel test socket includes a substrate with multiple cavities of certain depths in middle region of one side, electrical contacts (electrodes) of cantilever type directly above the cavities making individual contact with each contactor of semiconductor device, and multiple signal paths electrically connecting the cantilever type contacts on one side of the substrate and the loadboard PCB(printed circuit board) or motherboard PCB placed on the other side of the substrate.

Abstract: An apparatus for testing an integrated circuit comprises: a chip unit with a plurality of electronic parts such as chip units arranged on the upside of a chip support; a probe unit having a plurality of contacts arranged on the underside of a probe support and spaced downward from the chip unit; a connection unit supporting the probe unit spaced downward from the chip unit on a pin support so as to penetrate the pin support in an up-down direction; and a coupling unit which couples separably the chip unit, the probe unit and the connection unit and displaces one of the chip support and the probe support and the pin support in a direction to approach each other and to be away from each other relative to the connection unit.

Abstract: A semiconductor device comprises a substrate, a plurality of bonding pads formed on the substrate, a reference pad comprising a plurality of sensing lines located in a reference pad area of the substrate, and a plurality of detection wirings electrically connected to the respective sensing lines. The bonding pads are configured to make contact with a plurality of probe pins of a test apparatus to receive electrical test signals for an electrical test of the semiconductor device. The reference pad is configured to make contact with a reference pin of the test apparatus, and the reference pad area has substantially the same shape and size as the bonding pads such that positions in the reference pad area correspond one-to-one with positions in each of the bonding pads.

Abstract: In order to reduce the number of electrodes included in test patterns, the semiconductor integrated circuit includes, a plurality of first and second chains, a first common electrode connected to one end of each first chain, a second common electrode connected to one end of each second chain, and a plurality of selection electrodes. Each selection electrode is connected to the other end of any one of the plurality of first chains and to the other end of any one of the plurality of second chains. When a test target chain is selected from the plurality of first chains, a first reference voltage is applied to the first common electrode, a second reference voltage is applied to a target selection electrode that is connected to the test target chain, and a current flowing in the target selection electrode is measured to obtain a resistance value of the test target chain.

Abstract: A semiconductor integrated circuit device includes: terminals 11a and 11m; first to (2n+1)-th resistive elements (n is an integer of at least 1) (resistive element group 12) connected in series between the terminals 11a and 11m; a selection circuit 14 selecting, assuming that a terminal 11a connected to one end of the first resistive element is a 0th node, a terminal 11m connected to the other end of the (2n+1)-th resistive element is a (2n+1)-th node, and a connection point of the other end of an i-th resistive element (i is an integer from 1 to 2n) and one end of an (i+1)-th resistive element is an i-th node, any one of the 0th to (2n+1)-th nodes and outputting a voltage applied to the selected node; a switch group 15a capable of shorting any 2k-th node (k is an integer from 0 to n); and a switch group 15b capable of shorting any (2k+1)-th node. The 2k-th and (2k+1)-th nodes are shorted, and subsequently, a predetermined voltage is temporarily applied between the terminals 11a and 11m.

Abstract: A semiconductor device is able to terminate internal transmission lines and including a pre-driving unit configured to generate a pull-up driving signal and a pull-down driving signal corresponding to an output data signal, and transfer the pull-up driving signal and the pull-down driving signal to a first transmission line and a second transmission line, respectively, a main driving unit configured to drive an output data in response to the pull-up driving signal and the pull-down driving signal transferred through the first transmission line and the second transmission line and a termination unit configured to be supplied with a termination voltage to terminate the first transmission line and the second transmission line.

Abstract: To decrease the circuit scale necessary for the calibration of the output circuit and to decrease the time required for the calibration operation. The invention includes a first output buffer and a second output buffer that are connected to a data pin, and a calibration circuit that is connected to a calibration pin. The first output buffer and the second output buffer include plural unit buffers. The unit buffers have mutually the same circuit structures. With this arrangement, the impedances of the first output buffer and the second output buffer can be set in common, based on the calibration operation using the calibration circuit. Consequently, both the circuit scale necessary for the calibration operation and the time required for the calibration operation can be decreased.

Abstract: An apparatus and method controlling cellular automata containing a plurality of cascaded circuit cells having logic units. The cells are interleaved in groups toward supporting multiple directions, for example quad cells in which each cells of the quad is directed in a different directions separated by a fixed angle, such as 90 degrees (i.e., north, east, south, and west). These cells are triggered asynchronously as each cell is stabilized in preparation for receiving the trigger. The cells process data selectively based on the configuration of the cell and in response to receipt of data and trigger (or combined data and trigger) conditions from neighboring cells. The array can be utilized within a wide range of digital logic. As there is no need for distributing a global clock across the array of cells, the size of the array can be extended to any desired dimension.

Abstract: Provided is a complementary metal oxide semiconductor (CMOS) input buffer circuit that is capable of lower voltage operation with lower current consumption. The CMOS input buffer circuit includes: a depletion type NMOS transistor including a drain connected to a power supply terminal (VDD), and a gate connected to an output terminal; a PMOS transistor including a source connected to a source of the depletion type NMOS transistor, a drain connected to the output terminal, and a gate connected to an input terminal; and an NMOS transistor including a source connected to a reference terminal (GND), a gate connected to the input terminal, and a drain connected to the output terminal.

Abstract: A command control circuit of a semiconductor integrated device includes a plurality of latches sequentially connected and receiving a command signal, and a plurality of selection switches configured to pass or to interrupt the command signal inputted to each one of the plurality of latches.

Abstract: A method and circuit for attenuating positive feedback in a comparator in one embodiment includes an amplifier configured to compare a first input signal with a second input signal and to provide an output based upon the comparison, a non-linear function with a first input operably connected to an output of the amplifier, and a feedback loop operably connected to the output of the non-linear function and to a second input of the non-linear function, the feedback loop including a feedback limiting circuit configured to attenuate a feedback signal to the second input of the non-linear function.

Abstract: A signal transfer circuit according to the present invention includes a differential signal generation unit that generates a differential signal according to a voltage difference between two input signals, a voltage difference detection unit that detects a voltage difference between the two input signals input to the differential signal generation unit, and a signal output unit that outputs a signal including a predetermined value if the voltage difference is not detected by the voltage difference detection unit, and outputs the differential signal generated by the differential signal generation unit if the voltage difference is detected by the voltage detection unit.

Abstract: A disclosed semiconductor device includes an input terminal, a power line, a pnp-bipolar transistor connected to the power line, a first resistor connecting an emitter of the transistor to the input terminal, a second resistor connecting a collector of the transistor to ground, an operation circuit operable when the input voltage is a predetermined voltage or higher, the predetermined voltage being set within a first voltage region in which the input voltage cannot turn on the transistor, a comparator comparing an internal voltage with a reference voltage, the internal voltage being changed from a voltage value in a non-conductive state in which the transistor is not turned on, and an output terminal configured to output an output voltage which changes in response to a result of comparing the internal voltage with the reference voltage.

Abstract: Techniques for operating a switched-capacitor circuit to reduce input and feedback dependence and/or reduce reference modulation. A switched-capacitor circuit can be operated in four phases. In a first phase at a start of a cycle, the capacitor is charged/discharged by a common mode signal to mask any residual charge stored in the capacitor from a previous cycle. In a second phase, the capacitor is charged with an input signal. During a third phase, the capacitor is charged with a wide-bandwidth auxiliary reference signal, and during a fourth phase the capacitor is charged with a reference signal. During the third and fourth phases, the capacitor may be coupled to an integrating to circuit to integrate a difference between the input signal and the reference signal.

Abstract: The invention relates to controlling a device for converting charge into voltage comprising an amplifier and at least one capacitor mounted in inverse feedback between an input and an output of said amplifier, whereby said amplifier can be connected between at least one input stage, to receive a charge therefrom, and at least one output stage to deliver voltage thereto, said voltage being representative of the charge received at the input, said method comprising at least one phase comprising the voltage conversion of a charge received at the input. According to the invention the conversion phase comprises at least: one first sub-phase during which the amplifier is connected to the input stage and the amplifier is disconnected from the output stage; followed, by a second sub-phase during which the amplifier is disconnected from the input stage and the amplifier is connected to the output stage.

Abstract: A driver circuit includes a memory cell for storing data and a data switching circuit. The memory cell includes a first inverter having a first output terminal and a first input terminal and a second inverter having a second output terminal and a second input terminal. The first output terminal is connected to the second input terminal and the second output terminal is connected to the first input terminal. A switch is connected to the first input terminal so that the data is fed to the memory cell through the switch. A voltage shifter supplies a first supply voltage to the first inverter and second inverter while the data is being written into the memory cell and a second supply voltage to the first inverter and second inverter after the data has been written into the memory cell.

Abstract: This disclosure relates to a divide-by-N frequency divider system and frequency dividing method. The system includes a ring oscillator having M stages, where M is an integer, and a zero mean current component coupled to one or more of the stages to provide a zero mean current flow path.

Abstract: A high frequency divider involves a plurality of differential latches. Each latch includes a pair of cross-coupled P-channel transistors and a variable resistance element. The latch is controlled to have a lower output resistance at high operating frequencies by setting a multi-bit digital control value supplied to the variable resistance element. Controlling the latch to have a reduced output resistance at high frequencies allows the 3 dB bandwidth of the latch to be maintained over a wide operating frequency range. The variable resistance element is disposed between the two differential output nodes of the latch such that appreciable DC bias current does not flow across the variable resistance element. As a consequence, good output signal voltage swing is maintained at high frequencies, and divider current consumption does not increase appreciably at high frequencies as compared to output signal swing degradation and current consumption increases in a conventional differential latch divider.

Abstract: Provided is a frequency synthesizer capable of fine setting over a wide band and having a wide frequency pull-in range. A sine wave signal of an output frequency of a voltage controlled oscillating part is quadrature-detected, and in a PLL utilizing a vector rotating at a frequency (velocity) equal to a difference from a frequency of a frequency signal used for the detection, a frequency pull-in means integrates a first constant for increasing the output frequency as a pull-in voltage when a control voltage from the PLL to the voltage controlled oscillating part is larger than a prescribed set range, and integrates a second constant for decreasing the output frequency as the pull-in voltage when the control voltage is smaller than the set range. Then, an adding means adds the control voltage from the PLL and the pull-in voltage from the frequency pull-in means to output an addition result to the voltage controlled oscillating part.

Abstract: A Phase Locked Loop circuit, includes: a main path through which an input signal is propagated, and an actual signal is output; a main feedback path through which the actual signal is fed back to an input stage of the main path; and a local feedback path through which feedback is carried out from a path middle of the main path to a path middle of an input stage side; the main path including a phase detector, a loop filter, and a controlled oscillator, and the local feedback path including a replica portion, a delay portion, a first subtracter, and a second subtracter.

Abstract: A delay locked loop circuit includes: a voltage level detector for detecting of an external power source voltage level; a phase comparator for comparing phases of reference clock and feedback clock; a clock delayer for designating one of a first delay cell unit and a second delay cell unit as initial delay cell unit and the other as connected delay cell unit, delaying the reference clock by the initial delay cell unit until delay amount of the reference clock reaches a predetermined delay amount, delaying the reference clock by the connected delay cell unit after the delay amount of the reference clock reaches the predetermined delay amount in response to an output signal of the phase comparator, and outputting a delay locked clock; and a delay duplication modeler for changing the delay locked clock to reflect an actual delay condition of the reference clock and outputting the feedback clock.

Abstract: A delay locked loop circuit includes a phase comparison unit configured to compare a reference clock with a feedback clock and to output a phase comparison signal, a clock delay unit configured to delay a first reference clock in response to the phase comparison signal, to output a first delay locked clock, to delay one of the first delay locked clock and a second reference clock according to a frequency information signal, and to output a second delay locked clock, a delay locked clock generating unit configured to output a delay locked clock as a phase-mixed clock of the first delay locked clock and the second delay locked clock, the first delay locked clock, or the second delay locked clock in response to the frequency information signal and a delay transfer signal, and a delay replica model unit configured to reflect a delay condition of the reference clock.

Abstract: A duty cycle error correction circuit is disclosed. The circuit includes an inversion and delay circuit and a phase interpolator. The inversion and delay circuit is configured to receive an input signal having a waveform that includes a duty cycle error, delay and invert the input signal to form an inverted delayed signal, a determine whether the input signal and the inverted delayed signal are in phase. The phase interpolator is configured to receive the input signal, receive the inverted delayed signal, interpolate the received input signal and the received inverted delayed signal, and based on the interpolation, output a duty cycle error corrected signal.

Abstract: Apparatus, systems, and methods are disclosed that operate to generate a periodic output signal from a periodic input signal, obtain a plurality of samples of a phase difference between the output signal and the input signal, and to adjust a phase of the output signal based on the samples of the phase difference. Additional apparatus, systems, and methods are disclosed.

Abstract: Disclosed herein is a signal processing circuit including: a main path configured to transmit an input signal and output an actual signal; and a negative feedback path configured to feed back the actual signal to an input stage of the main path, wherein the main path includes a main path block that receives an input signal and outputs an actual signal, the negative feedback path includes a negative feedback block that generates a control signal and supplies the control signal to an input part of an input signal of the main path; a replica block that is supplied with a control signal of the negative feedback block to output a pseudo actual signal, and imitates the main path block; and a signal delay block that delays a pseudo actual signal of the replica block by a dead time of a loop.

Abstract: Apparatus and method for receiving burst data signal without using external detection signal are disclosed. The apparatus can include a clock data recovery (CDR) circuit to generate a clock signal, and a detection circuit to detect an initial portion in the data recovered from the input signal. The CDR circuit can have a first mode that attempts to synchronize the clock signal with a reference data signal, and a second mode that attempts to synchronize the clock signal with the burst data signal and to recover data based on the clock signal. The apparatus can include a controller to conduct a process including, in sequence, setting the CDR circuit in the first mode, setting the CDR circuit in the second mode, and keeping the CDR circuit in the second mode when the detection circuit detects the initial portion in the recovered data.

Abstract: Apparatus and method for receiving burst data signal without using external detection signal are disclosed. The apparatus can include a clock data recovery (CDR) circuit to generate a clock signal, and a detection circuit to detect an initial portion in the data recovered from the input signal. The CDR circuit can have a first mode that attempts to synchronize the clock signal with a reference data signal, and a second mode that attempts to synchronize the clock signal with the burst data signal and to recover data based on the clock signal. The apparatus can include a controller to conduct a process including, in sequence, setting the CDR circuit in the first mode, setting the CDR circuit in the second mode, and keeping the CDR circuit in the second mode when the detection circuit detects the initial portion in the recovered data.

Abstract: A semiconductor device includes a phase division unit, a clock delay unit, a duty cycle correction clock generation unit, and a duty cycle correction voltage generation unit. The phase division unit is configured to divide a phase of a source clock to generate a first division clock. The clock delay unit is configured to delay the first division clock by a delay amount corresponding to a voltage level of a duty cycle correction voltage to output a second division clock. The duty cycle correction clock generation unit is configured to generate a duty cycle correction clock whose logic level changes at respective edges of the first division clock and the second division clock. The duty cycle correction voltage generation unit is configured to generate the duty cycle correction voltage whose voltage level changes depending on a duty cycle of the duty cycle correction clock.

Abstract: A sampling circuit for use in a semiconductor device, includes a first sampling unit configured to sample a data signal in synchronism with a reference clock signal and output a first output signal, a second sampling unit configured to sample a delayed data signal in synchronism with the reference clock signal and output a second output signal, and an output unit configured to combine the first and second output signals and output a sampling data signal.

Abstract: A voltage generator capable of preventing latch-up is disclosed. The voltage generator includes a positive charge pump unit, a negative charge pump unit, a second stage charge pump unit, and a control unit. The positive charge pump unit is utilized for generating a positive charge pump voltage according to a first enable signal. The negative charge pump is utilized for generating a negative charge pump voltage according to a second enable signal. The second stage charge pump unit is utilized for generating a gate-on voltage and a gate-off voltage according to a third enable signal and a fourth enable signal. The control unit is utilized for generating the first enable signal, the second enable signal, the third enable signal, and the fourth enable signal and make the second stage charge pump unit generate the gate-on voltage (or the gate-off voltage) in a successively-increasing (or decreasing) manner.

Abstract: A pulsed latch circuit with conditional shutoff prevents an input node, such as a node receiving data, of the pulsed latch circuit, from latching data based on a delayed input control signal, such as an internal clocking signal, and based on a feedback latch state transition detection signal indicating that a current state of input data is stored in the latch. As such, two control conditions are used to shut down the latch. In one example, a condition generator detects when the latch has captured data correctly and outputs a signal to disable the input node. In addition, a variable delay circuit is used to adjust the width of the allowable input signal to set a worst case shutoff time. If data is latched early, a feedback latch state transition detection signal causes the input node to be disabled. If data is not latched early, the maximum allowable latch time is set by the variable delay circuit.

Abstract: A static latch includes a clock-based driver, an actuation circuit, and a weak latched unit. The clock-based driver includes first node, second node, a driving unit, first pass switch, and second pass switch. The driving unit drives the first node corresponding to first voltage in response to first level of an input signal and drives the second node having second voltage in response to second level of the input signal. The first pass switch drives an output node having a latched signal corresponding to the first voltage in response to the clock signal. The second pass switch drives the output node corresponding to the second voltage in response to the inverted clock signal. The actuation circuit drives the output node corresponding to the second voltage in response to the clock signal. The weak latch unit keeps the level of the latched signal when the static latch is disabled.

Abstract: A delay line includes a delay amount adjusting unit configured to adjust a delay amount of an input signal in response to a first delay control code, and a delay unit configured to determine a number of first delay blocks having a delay amount with a first variation width and a number of second delay blocks having a delay amount with a second variation width in response to a second delay control code, wherein the delay amount with the first variation width and the delay amount with the second variation width are determined by the delay amount adjusting unit and the first and second variation widths correspond to a level change of a power supply.

Abstract: A voltage level shifter is provided for receiving an input signal from an input voltage domain and converting said signal to a shifted signal in a shifted voltage domain. The voltage level shifter has an input, switching circuitry, a pass transistor and an output. The switching circuitry is configured to isolate an output of said pass transistor from said supply voltage rail when said input voltage domain corresponds to a logical zero.

Abstract: Techniques for providing an efficient interface between a mixer block and a transconductance (Gm) block. In an exemplary embodiment, the output currents of at least two unit cells of the transconductance block are conductively coupled together, and coupled to the mixer block using a single conductive path. For a differential signal, the conductive path may include two conductive leads. Within the mixer block, the single conductive path may be fanned out to at least two unit cells of the mixer block. At least one Gm unit cell may be selectively enabled or disabled to control the gain setting of the mixer-transconductance block. The techniques may further be applied to transceiver architectures supporting in-phase and quadrature mixing, as well as multi-mode and/or multi-band operation.

Abstract: A circuit with inputs for first (LO) and second (IF) unbalanced signals at respective first and second frequencies, also comprising a mixer for the first and second input signals to produce a third signal (RF) at a third frequency at an output port. The mixer comprises first and second transistors which are cross-coupled to each other. Output terminals of the transistors are connected to the output port, and the mixer also comprises a first impedance connected to ground. The mixer, by means of the transistors and the first impedance is an active balun for the first input signal (IF), and the input port for the second signal (LO) comprises a second impedance, so that the first and second impedances together act as a passive balun for the second signal (LO).

Abstract: In a case where two constant envelope signals corresponding to an input signal are generated through analog signal processing, variation in detection sensitivities of amplitudes of those signals is suppressed. At least one of a mixer (24) for detecting an amplitude of a first intermediate signal S1 and a mixer (26) for detecting an amplitude of a second intermediate signal S2 detects an amplitude of a given reference signal, and sampling hold circuits (36, 38) hold a voltage related to those amplitudes. Then, detection sensitivities of the mixer (24, 26) are corrected based on the held voltage.

Abstract: Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals are described. Such devices and method include use of symmetrical compensation capacitances, symmetrical series capacitors, or symmetrical sizing of the elements of the stack.

Abstract: SOI MOSFETs are used for the transistors for switching of an antenna switch and yet harmonic distortion is significantly reduced. Capacitance elements are respectively added to either the respective drains or gates of the transistors comprising the through MOSFET group of reception branch of the antenna switch. This makes the voltage amplitude between source and gate and that between drain and gate different from each other. As a result, the voltage dependence of source-drain parasitic capacitance becomes asymmetric with respect to the polarity of voltage. This asymmetry property produces signal distortion having similar asymmetry property. Therefore, the following can be implemented by setting it so that it has the same amplitude as that of second-harmonic waves arising from the voltage dependence of substrate capacitance and a phase opposite to that of the same: second-order harmonic distortion can be canceled out and thus second-order harmonic distortion can be reduced.

Abstract: Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals are described. Such devices and method include use of symmetrical compensation capacitances, symmetrical series capacitors, or symmetrical sizing of the elements of the stack.

Abstract: A display device in which not only a variation in a current value due to a threshold voltage but also a variation in a current value due to mobility are prevented from influencing luminance with respect to all the levels of grayscale to be displayed. After applying an initial potential for correction to a gate and a drain of a driving transistor, the gate and the drain of the driving transistor is kept connected in a floating state, and a voltage is held in a capacitor before a voltage between the gate and a source of the driving transistor becomes equal to a threshold voltage. When a voltage obtained by subtracting the voltage held in the capacitor from a voltage of a video signal is applied to the gate and the source of the driving transistor, a current is supplied to a light-emitting element. A value of an initial voltage for correction differs in accordance with the voltage of the video signal.

Abstract: A CMOS temperature detection circuit includes a start-up circuit for generating a start-up voltage (VN), and a proportional to absolute temperature (PTAT) current generator coupled to the start-up circuit for generating a PTAT current. The start-up voltage turns on the PTAT current generator, and the PTAT current generator uses the sub-threshold characteristics of CMOS to generate the PTAT current. A PTAT voltage generator coupled to the PTAT current generator receives the PTAT current and generates a PTAT voltage and an inverse PTAT voltage (VBE). A comparator circuit coupled to the voltage generator compares the inverse PTAT voltage to first and second alarm limits, which are defined using the generated PTAT voltage, and generates an alarm signal based on the comparison results.

Abstract: A system includes a voltage generator, current sensing amplifiers, and a control module. The voltage generator outputs a first voltage, which is generated based on received codewords, to a first word line that communicates with N transistors each having programmable threshold voltages, where N is an integer greater than 1. The current sensing amplifiers sense currents through the N transistors via N bit lines, respectively, and generate control signals when current through a corresponding one of the N transistors is greater than or equal to a predetermined current. The control module generates measured values of the threshold voltages of the N transistors by compensating the ones of the codewords based on at least one of a position of the corresponding ones of the N transistors and a temperature.

Abstract: A device for detecting an approach or a touch related to at least one sensor element, in particular in an electrical appliance, the device comprising an input side and an output side, between which a first signal path with a first input and a first output and a second signal path with a second input and a second output are arranged, wherein the first signal path comprises a delay device with a delay, the delay device configured to delay a digital first input signal at the first input into a digital first output signal at the first output, wherein the delay is dependent on a capacitance value resulting from the approach or the touch related to the sensor element, and wherein the second signal path comprises an XOR-element, which is configured to generate an edge in a digital second output signal at the second output, when the digital first output signal outputted by the delay device exhibits an edge.

Abstract: A capacitive sensor array comprises a sensor electrode by which the intrusion of an object into a space in front of the sensor electrode is detected, a shield electrode and a background electrode. A control and evaluation circuit is coupled with the sensor electrode. This control and evaluation circuit detects a change in the capacitance of the sensor electrode in comparison to a reference potential, in that the sensor electrode, at a given frequency, periodically and repeatedly couples with a given first potential evaluates at least one parameter of a current and voltage profile dependent on the periodic charging and discharging of the sensor electrode in order to detect the capacitance change, The background electrode is arranged at a distance behind the sensor electrode.

Abstract: The invention relates to a proximity switch for the detection of objects, comprising a sleeve-type housing, comprising a transducer unit disposed at a measuring end of said sleeve-type housing, the transducer unit comprising a transducer receptacle and a transducer element disposed therein for detecting a physical measurand, comprising a connecting piece disposed at a connecting end of said sleeve-type housing, comprising an electronic assembly disposed on a printed circuit board accommodated in said sleeve-type housing and having a control and evaluation unit adapted to control said transducer element, to evaluate signals measured by said transducer element and to emit switching signals to an environment, wherein variously colored light-emitting diodes are disposed on said printed circuit board at the measuring end and at the connecting end for indicating operational and/or switching states, wherein said transducer receptacle exhibits a transparent region disposed around a housing axis and/or a transparent r