Abstract: Disclosed are embodiments of an e-fuse programming/re-programming circuit. In one embodiment, the e-fuse has two short high atomic diffusion resistance conductor layers positioned on opposite sides and at a same end of a long low atomic diffusion resistance conductor layer. A voltage source is used to vary the polarity and, optionally, the magnitude of voltage applied to the terminals in order to control bi-directional flow of electrons within the long conductor layer and, thereby formation of opens and/or shorts at the long conductor layer-short conductor layer interfaces. The formation of such opens and/or shorts can be used to achieve different programming states. Other circuit structure embodiments incorporate e-fuses with additional conductor layers and additional terminals so as to allow for even more programming states. Also disclosed are embodiments of associated e-fuse programming and re-programming methods.

Abstract: A semiconductor device includes a first transmission line and a second transmission line disposed at different layers; a contact fuse coupled with the first transmission line and the second transmission line; a power driver configured to apply an electric stress to the contact fuse; and a fuse state output unit configured to output a fuse state signal having a logic level corresponding to an electric connection state of the contact fuse.

Abstract: A technique for a reverse conducting semiconductor device including an IGBT element domain and a diode element domain that utilize body regions having a mutual impurity concentration, that makes it possible to adjust an injection efficiency of holes or electrons to the diode element domain, is provided. When a return current flows in the reverse conducting semiconductor device that uses an NPNP-type IGBT, a second voltage that is higher than a voltage of an emitter electrode is applied to second trench gate electrodes of the diode element domain. N-type inversion layers are formed in the periphery of the second trench gate electrodes, and the electrons flow therethrough via a first body contact region and a drift region which are of the same n-type. The injection efficiency of the electrons to the return current is increased, and the injection efficiency of the holes is decreased.

Abstract: Provided is a charge pump circuit which is preferably used for reducing noise generated when electric charges are accumulated in a capacitor of the charge pump circuit. A load driving system 1 includes a charge pump circuit 2, a clock generation circuit 4, an amplifier circuit 6, and a load 8. The charge pump circuit 2 includes capacitors C1 and C2, a transistor PTr3 which is a P-channel MOS transistor and controls current supply to the C1, switching elements SW1 to SW3, and a supply current control circuit 20. The charge pump circuit 2 switches the SW1 to SW3, to thereby perform the accumulation of electric charges to the C1 and the transfer of the accumulated electric charges to the C2 for generating a negative power source. The supply current control circuit 20 includes a transistor PTr4, a switching element SW4, and a transistor NTr6 which forms a current mirror with a transistor NTr5 which constitutes an output stage of the amplifier circuit 6.

Abstract: A test circuit provided to monitor a bandgap circuit that outputs a bandgap reference voltage The test circuit includes a reference voltage test module to output a first pass signal when an operating voltage of the bandgap circuit is greater than a first threshold voltage; an output test module to output a second pass signal when an output voltage of the bandgap circuit is greater than a second threshold voltage; and an overdrive test module to output a third pass signal when a minimum operating voltage of the test circuit is detected. Furthermore, a logic circuit is provided and coupled to outputs of each of the test modules. The logic circuit is further configured to output an operating signal, which indicates that the bandgap reference voltage is stable, after receiving the first, second, and third pass signals.

Abstract: An integrated circuit includes a first internal voltage generating unit configured to receive an external power and to generate a first internal voltage, and a second internal voltage generating unit configured to receive the first internal voltage, and to generate a second internal voltage having an absolute value of a target voltage level that is less than an absolute value of the first internal voltage, wherein the second internal voltage generating unit is initially enabled at a later time than the first internal voltage generating unit is initially enabled.

Abstract: A voltage reference circuit with temperature compensation includes a power supply, a reference voltage supply, a first PMOS transistor with its source connected to the power supply voltage, a second PMOS transistor with its source connected to the power supply and its gate and drain connected to the first PMOS gate, a first NMOS transistor with its gate and drain connected the first PMOS drain, a second NMOS transistor with its drain connected to the second PMOS drain and its gate connected with the first NMOS gate to the reference voltage supply, a resistor connected to the second NMOS source and ground, and an op-amp with its inverting input and its output connected the first NMOS source and its non-inverting input connected to the ground. In another aspect, a voltage reference circuit output is coupled to an NMOS gate in saturation mode connected to another voltage reference circuit.

Abstract: The disclosure relates to an integrated circuit comprising a data buffer circuit comprising first and second transistors coupled to a contact pad and third and fourth transistors. A first bias voltage is applied on a conduction terminal of the third transistor and a second bias voltage is applied on a conduction terminal of the fourth transistor. A third bias voltage less than the second bias voltage is applied on a control terminal of the first transistor and a fourth bias voltage greater than the first bias voltage is applied on a control terminal of the second transistor. Application notably for the production of a so-called “High Speed” USB port.

Abstract: A semiconductor device and a method for driving the same rapidly detect failure of a through-semiconductor-chip via and effectively repairing the failure using a latching unit assigned to each through-semiconductor-chip via. The semiconductor device includes a plurality of semiconductor chips that are stacked, and a plurality of through-semiconductor-chip vias to commonly transfer a signal to the plurality of semiconductor chips, wherein each of the semiconductor chips includes a multiplicity of latching units assigned to the through-semiconductor-chip vias and the multiplicity of latching units of each of the semiconductor chips constructs a boundary scan path including the plurality of through-semiconductor-chip vias to sequentially transfer test data.

Abstract: Amplifiers with power-on trim and methods using an amplifier system having an amplifier system input and an amplifier system output, an amplifier, a comparator, a successive approximation register having an input coupled to an output of the comparator, a first switch for switching an input of the amplifier from the amplifier system input to shorting the amplifier input, a second switch for switching an output of the amplifier from the amplifier system output to an input of the comparator, an output of the successive approximation register being coupled to an N bit digital to analog (D/A) converter, the D/A converter being a non-binary converter using a radix of less than 2 for at least the most significant bits, and an output of the D/A converter being coupled to the amplifier to control the input offset of the amplifier. Novel embodiments for the amplifier, comparator and D/A converter are disclosed.

Abstract: There is provided a circuit to make a bias for adjusting a threshold voltage of MOS devices available in a wide range, to extend the amplitude range of the input voltage range of a semiconductor differential amplifier from a power supply potential to a ground potential, and automatically to ensure an operation of a differential pair in the saturation region as rejecting the common-mode signal in the entire voltage range. The semiconductor differential amplifier is configured by the first gates of two four-terminal fin type FETs serving as an input terminal of differential pair, and in that the second gates of the four-terminal fin type FETs interconnected with each other, wherein a signal decreasing monotonously along with the increase in the input common-mode component is input.

Abstract: A high speed linear differential amplifier (HSLDA) having automatic gain adjustment to maximize linearity regardless of manufacturing process, changes in temperature, or swing width change of the input signal. The HSLDA comprises a differential amplifier, and a control signal generator including a replica differential amplifier, a reference voltage generator, and a comparator. The comparator outputs a control signal that automatically adjusts the gain of the high speed linear differential amplifier and of the replica differential amplifier. The replica differential amplifier receives predetermined complementary voltages as input signals and outputs a replica output signal to the comparator. The reference voltage generator outputs a voltage to the comparator at which linearity of the output signal of the differential amplifier is maximized. The control signal equalizes the voltage level of the replica output signal and the reference voltage, and controls the gain of the differential amplifier.

Abstract: Automatic Gain Control AGC circuit comprising a PIN-diode attenuator having an input and an output and a control circuit connected to the attenuator so as to read a signal at the attenuator output. The control circuit is configured to supply a feedback control signal to the attenuator based on an error signal between the signal read at the attenuator output and a reference signal, so as to modulate an attenuation level of said attenuator and maintain a substantially constant power level at the attenuator output. The control circuit particularly comprises at least a resistor and a capacitor which define a time constant of the AGC circuit, so that the AGC circuit features a main pole depending on such time constant and on a voltage of the feedback control signal. The control circuit also comprises a variable gain block, which receives the feedback control signal and which is configured to modulate the main pole proportionally to a variable gain (G) of the gain block.

Abstract: A variable gain amplifier which includes a plurality of individual amplifiers and variably controls the gain by switching to and using one of the individual amplifier circuits includes an individual amplifier (11) which amplifies a signal input from the input terminal of the variable gain amplifier (100) by an active element (M1), and outputs the input signal, an attenuator (14) which attenuates the input signal by a passive circuit (ZC), and outputs the input signal as an attenuated signal, and a virtual ground point providing circuit (15) which provides a virtual ground potential to the input terminal of the virtual ground point providing circuit (15) by an isolation active circuit (MC) interposed between the input terminal of the virtual ground point providing circuit (15) and the ground node of the variable gain amplifier (100).

Abstract: A multi-stage Class AB amplifier system includes a first Class AB amplifier circuit and a second Class AB amplifier circuit. A current mirror circuit is in communication with the first Class AB amplifier circuit. A bias circuit is in communication with the current mirror circuit. A frequency compensation circuit is arranged between the bias circuit and the second Class AB amplifier circuit. A common-mode feedback circuit is in communication with the second Class AB amplifier circuit. The common-mode feedback circuit is configured to generate a feedback signal.

Abstract: A radio frequency power amplifier includes: an input terminal to which a radio frequency signal is applied; a first HBT which amplifies the radio frequency signal; a second HBT which amplifies the radio frequency signal; a matching circuit connected to an output node of the second HBT; a switch connected to an output node of the matching circuit; and an output matching circuit connected to an output node of the first HBT. The output node of the switch is connected to the output node of the first HBT via the output matching circuit, and an impedance looking into an output side of the radio frequency power amplifier from the output node of the switch is higher than an impedance looking into the output side of the radio frequency power amplifier from the output node of the first HBT.

Abstract: Embodiments of the invention include a method for use in a device having a local oscillator. The method includes performing, for the local oscillator that is disciplined by an external reference signal, while locked to the external reference signal, training at least two mathematical models of the oscillator to determine a predicted correction signal for each mathematical model based at least in part on a correction signal that is a function of the external reference signal and which is used to discipline drift in the oscillator. The method also includes selecting a mathematical model of the at least two mathematical models that results in a smallest time error when disciplining the oscillator to use when the external reference signal is unavailable and an alternative correction signal is to be used to discipline drift in the oscillator.

Abstract: An integrated circuit (IC) with a low temperature coefficient and an associated calibration method are provided to lower the effect of the environmental temperature on the IC and at the same time to maintain the small area and low power consumption of the IC. The IC includes a first circuit, a second circuit and a calibration control circuit. The first circuit has a low temperature coefficient and generates a first output. The second circuit has a high temperature coefficient and generates a second output. The calibration control circuit detects the first and second outputs, and compares the first and second outputs according to a predefined relationship therebetween so as to generate an adjusting signal. The adjusting signal is for adjusting the second circuit such that the second circuit can have the characteristic of the low temperature coefficient.

Abstract: An oscillation circuit and a semiconductor device incorporating same are provided. The oscillation circuit includes an oscillation unit including a plurality of inverters and configured to perform signal transmission between first and second nodes of the inverters such that each of the inverters performs an oscillation operation to generate clock signals having different phases, when a control signal is activated, and latch a clock signal of the second node and cut off the signal transmission between the first and second nodes to stop the oscillation operations of the inverters, when the control signal is deactivated, and a control unit configured to activate the control signal when an oscillation enable signal is activated, and deactivate the control signal using one of a clock signal output from an inverter connected to the second node among the plurality of inverters and clock signals of which the phases lead that of a clock signal of the first node, when the oscillation enable signal is deactivated.

Abstract: An oscillation circuit includes a piezoelectric oscillator, a resistive element, and an exciting circuit connected between an input node and an output node in parallel with one another, a first capacitor connected between the input node and a ground node, and a second capacitor connected between the output node and the ground node. The exciting circuit includes a NAND circuit and first and second inverters that are cascade-connected. Oscillation of the piezoelectric oscillator is started when an enable signal input to the NAND circuit is switched to an H level.

Abstract: A crystal oscillator emulator integrated circuit includes a first temperature sensor configured to sense a first temperature of the crystal oscillator emulator integrated circuit. The memory is configured to (i) store calibration parameters and (ii) select at least one of the calibration parameters based on the first temperature. A semiconductor oscillator is configured to generate an output signal, wherein (i) the output signal has a frequency and an amplitude and (ii) the frequency is based on the at least one of the calibration parameters. An amplitude adjustment module is configured to (i) compare the amplitude to a predetermined amplitude and (ii) generate a control signal to adjust the amplitude based on the comparison.

Abstract: A relaxation oscillator. The relaxation oscillator includes a comparator and a latch. The comparator includes a comparator output and a comparator input that is configured to receive a first input signal in response to a first signal and configured to receive a second input signal in response to a second signal. The latch includes a latch-set input that is configured to be coupled to the comparator output in response to a third signal, a latch-reset input that is configured to be coupled to the comparator output in response to a fourth signal and a latch output that is configured to output the second signal. The relaxation oscillator is configured to achieve an approximately fifty percent duty cycle without requiring the use of a second comparator.

Abstract: A digitally-tunable filter includes a tunable filter circuit (110) for generating an output signal by processing an input signal based at least on a plurality of filter control signals (114). The filter also includes an input power sampler (118) for sampling an input power of the input signal, an output power sampler (120) for sampling an output power of the output signal, and a tuning processor (112) for generating the plurality of filter control signals based on at least one channel control signal (116) associated with a current communications channel and a comparison of the input and the output powers. In the filter, the plurality of control signals configure the tunable filter circuit to attenuate at least a portion of the input signal if a difference between the input power and the output power is less than a threshold value.

Abstract: A balun is provided. The balun includes a first substrate, a feed conductor, a second substrate, a first ground layer, a second ground layer and a common ground element. The feed conductor includes a feed portion and an extended feed portion. The feed conductor is disposed on the first substrate. The first ground layer is disposed on the second substrate corresponding to the feed portion. The second ground layer is disposed on the second substrate corresponding to the extended feed portion. A gap is formed between the first and second ground layers. The common ground element is disposed on the second substrate. The common ground element is electrically connected to the first and second ground layers. The common ground element includes a first common ground portion parallel and corresponding to the feed conductor.

Abstract: A distributed multiband coupling circuit including: a number n of first and of second terminals equal to the number of frequency bands; a third terminal and a fourth terminal; a number n of distributed couplers equal to the number of frequency bands, all couplers being identical and sized according to the highest frequency band, and each coupler including a first conductive line between first and second ports intended to convey a signal to be transmitted in the concerned frequency band, and a second conductive line coupled to the first one between third and fourth ports; a first set of resistive splitters in cascade between the third ports of the couplers, a terminal of the splitter associated with the first coupler being connected to the third terminal of the coupling circuit; and a second set of resistive splitters in cascade between the fourth ports of the couplers, a terminal of the splitter associated with the first coupler being connected to the fourth terminal of the coupling circuit.

Abstract: A power amplifier module comprises a power amplifier disposed in a coreless substrate and a directional coupler disposed in a coreless substrate and connected to the power amplifier.

Abstract: A sequential rotated feeding circuit for sequential rotated feeding of a signal with a wavelength ?g is provided. The sequential rotated feeding circuit comprises a feed transformer, a resistance transforming unit, a first antenna transformer, a second antenna transformer, a third antenna transformer and a fourth antenna transformer. The feed transformer has a feed line width resistance Zin. The resistance transforming unit is connected to the feed transformer, the first antenna transformer, the second antenna transformer, the third antenna transformer and the fourth antenna transformer. The resistance transforming unit has a transforming line width resistance Zl.

Abstract: A SAW filter includes a piezoelectric body, an IDT electrode on the piezoelectric body, and signal wiring electrically connected to the IDT electrode. The signal wiring has a thickness not less than a skin depth specified based on the frequency of a signal passing through the signal wiring and the electrical conductivity of the signal wiring. As a result, the signal wiring has low propagation loss of the signal passing through it, so that the SAW filter has excellent transmission characteristics.

Abstract: A tunable delay line for radiofrequency or microwave frequency applications consists of at least one ridge waveguide in which the ridge is movable in the waveguide body so as to vary the width of an air gap defined between the longitudinal end surface of the ridge and a confronting member of the waveguide. The ridge is moved by an actuator external to the waveguide body.

Abstract: A variable phase shifter is provided. In the variable phase shifter, a fixed substrate, which is a dielectric substrate, is fixedly mounted in a housing and has at least one arc-shaped microstrip line on one surface thereof. A rotation substrate, which is a dielectric substrate, is rotatably mounted in the housing, in contact with the other surface of the fixed substrate and has a slot line on the contact surface thereof. Microstrip-slot line coupling takes place between the microstrip line and the slot line even during rotation. Both ends of the microstrip line are connected to an output port of the variable phase shifter and the slot line is electrically connected to an input port of the variable phase shifter, for receiving an input signal.

Abstract: An acoustic wave device includes an input terminal; a balun that is connected to the input terminal, converts a signal input from the input terminal into two anti-phase signals, and outputs the two anti-phase signals; and a filter that is connected to the balun, and outputs the two anti-phase signals input from the balun as balanced output signals. An output impedance of the balun is equal to an input impedance of the filter, and is larger than an output impedance of the filter.

Abstract: A micro-electromechanical device of the present invention includes a resonator and an electrode facing each other, a pair of thermal oxide film formed on the surfaces of the resonator and electrode facing each other and a narrow gap provided between the thermal oxide films. A process for fabricating a micro-electromechanical device includes a step of processing an Si layer to be the resonator and the electrode by using photolithography and etching to form a groove to be a gap, and a step of performing thermal oxidation on the Si layer to form a pair of thermal oxide films of Si on the opposite surfaces of the groove.

Abstract: A filter includes a cross-coupling link which includes a crossbar, a first vertical support attached to one end of the crossbar, a second vertical support attached to another end of the crossbar, a first coupling arm attached to the first vertical support, a second coupling arm attached to the second vertical support, a first adjustable support attached to the first coupling arm at one end and grounded at another end, and a second adjustable support attached to the second coupling arm at one end and grounded at another end.

Abstract: A radio-frequency filter device is provided with: a dielectric layer, a pair of conductive layers on both surfaces of the dielectric layer, shielding via conductors short-circuiting the conductive layers, a waveguide resonator portion formed by the shielding via conductors, another conductive layer on a surface of the dielectric layer, a pair of strip conductors on the dielectric layer, a pair of input and output coupling via conductors. The coupling via conductors pass through the conductive layer and the waveguide resonator portion without contacting with the conductive layer. One end of each coupling via conductor is short-circuited to the conductive layer, and the other end is connected to one strip conductor. By inputting a radio-frequency signal, fundamental and second-order resonant modes are excited in the waveguide resonator portion.

Abstract: A tuneable filter comprising a filter body defining a tuning cavity; a tuning member within the tuning cavity; and, a linear actuator adapted to displace the tuning member within the cavity to tune the filter; the linear actuator comprising a motor; a drive arm connected to the motor and extending along a drive axis, the drive arm being adapted to be rotated about the drive axis by the motor; an extension arm extending along the drive axis being connected at one end to the tuning member and being in engagement with the drive arm at the other end; the engagement between the drive arm and extension arm being arranged such that rotation of the drive arm about the drive axis displaces the extension arm along the drive axis; each of the drive arm and extension arm comprising an end stop, the end stops being arranged such that as the extension arm reaches the end of its range of travel towards the drive arm the drive arm end stop rotates into abutment with the extension arm end stop, preventing further rotation of

Abstract: Provided is a dielectric ceramics having crystals of a composition formula: aBaO.bCoO.cZnO.dNb2O5 wherein coefficients a, b, c and d satisfy 0.498?a<0.500, 0.066?b?0.132, 0.033?c?0.099, and 0.335?d?0.338. Provided is a dielectric ceramics having crystals composed of BaO, CoO, ZnO, and Nb2O5, wherein a peak strength ratio IA/IB between a crystal peak IA existing in the vicinity of 2?=18° and a crystal peak IB existing in the vicinity of 2?=31° in an X-ray diffraction chart is 0.003 or more. Provided is a resonator using the dielectric ceramics as a dielectric body.

Abstract: Some of the embodiments of the present disclosure provide a semiconductor package comprising a first die; a second die; and an inductor arrangement configured to inductively couple the first die and the second die while maintaining electrical isolation between active circuit components of the first die and active circuit components of the second die. Other embodiments are also described and claimed.

Abstract: There is provided a waveform equalization circuit with pulse width modulation that includes pulse-width adjust-level generation circuits PWCLC1a, PWCLC2a, for generating a pulse-width adjust-level VCNT on the basis of preceding input data units Din_P, Din_N, respectively, pulse-width adjustment circuits PWCC1a, PWCC2a, for adjusting a pulse-width according to VCNT, respectively, and a waveform shaping circuit WAC for shaping a waveform of an output signal from each of the pulse-width adjustment circuits. The pulse-width adjustment circuit has a driving power to be controlled according to a consecutive bits count of each of the preceding input data units, and varies transition time of each of output data units Do1_P, Do1_N, thereby adjusting the pulse width.

Abstract: Terminal-bolts and a fixed contact are formed with different kinds of metals, and fixed to a fixing hole formed in the fixed contact by press fitting one end of the terminal-bolts. A plurality of concavo-convex parts is provided on a surface of the fixed contact that faces the movable contact. A plurality of concavo-convex portions is provided on another surface of the fixed contact that faces an anti movable-contact side. The concavo-convex portions are arranged so that positions of concave parts of the concavo-convex portions match positions of convex parts of the concavo-convex portions provided in the opposite surface of the fixed contact. The concavo-convex parts are at least partly curved, and have the same height and project in a height direction from the fixed contact.

Abstract: A magnetic assembly includes a magnetic core, a circuit board and multiple conductive elements. The circuit board includes multiple conductive regions. The conductive elements stride over the magnetic core. Each of the conductive elements includes a first terminal, a second terminal and a connecting part. The connecting part is arranged between the first terminal and the second terminal for connecting the first terminal with the second terminal. The first terminal and the second terminal of each conductive element are respectively connected to two adjacent conductive regions. The multiple conductive elements and the multiple conductive regions collectively define multiple loops. The multiple loops interact with the magnetic core to generate inductance.

Abstract: An electromagnetic control mechanism (1) with an actuating element (15) which can move longitudinally and can be retained in three stable positions. By way of two coils (3, 4), the actuating element (15) can be switched to a first or to a second stable position, namely, the two opposed end positions. The actuating element (15) comprises an actuator rod (7) with a permanent magnet (8) arranged on the actuator rod (7), such that the actuating element (15) can be retained magnetically in the third stable position by the permanent magnet (8).

Abstract: A device for controlling a magnetic flux in an electromagnetic system, wherein the system includes magnetically connected magnetic cores, between which a volume is arranged. The volume includes a controllable magnetic flux region and the magnetic flux region includes a magnetic material having a relative permeability that may be varied by influencing the temperature of the material. The magnetic material includes a magnetic material, the Curie point of which lies within the temperature operating range of the device and exhibits paramagnetic properties within the temperature range. Also a method of controlling a magnetic flux.

Abstract: By eliminating the necessity of a prior step for cleaning a sintered magnet before adhering Dy and/or Tb to the surface of the sintered magnet S, the productivity of a permanent magnet having diffused Dy and/or Tb into grain boundary phase is improved. Iron-boron-rare earth based sintered magnet (S) disposed in a processing chamber (20) is heated to a predetermined temperature. An evaporating material (V) which is made of a hydride containing at least one of Dy and Tb is disposed in the same or in another processing chamber and is evaporated to cause the evaporated evaporating material to the surface of the sintered magnet. Metal atoms of Dy and/or Tb are diffused into grain boundary phase of the sintered magnet.

Abstract: A magnetic article comprises, in total, elements in amounts capable of providing at least one (La1-aMa) (Fe1-b-cTbYc)13-dXe phase and less than 0.5 Vol % impurities, wherein 0?a?0.9, 0?b?0.2, 0.05?c?0.2, ?1?d?+1, 0?e?3, M is one or more of the elements Ce, Pr and Nd, T is one or more of the elements Co, Ni, Mn and Cr, Y is one or more of the elements Si, Al, As, Ga, Ge, Sn and Sb and X is one or more of the elements H, B, C, N, Li and Be. The magnetic article comprises a permanent magnet.

Abstract: A coil component ensuring adhesive bonding between first and second cores. The coil component also includes an inductive component and a pair of terminal electrodes. The first core has a first adhesion surface. The second core is connected to the first core by an adhesive agent and has a second adhesion surface in confrontation with the first adhesion surface. At least one of the first adhesion surface and the second adhesion surface is formed of a glass surface layer to which the adhesive agent is applied. The inductive component is wound over the first core. The pair of terminal electrodes are provided at one of the first core and the second core. The inductive component has one end portion electrically connected to one of the terminal electrodes and has another end portion electrically connected to remaining one of the terminal electrodes.

Abstract: An electrical device is produced by winding wires around a core. The device may be used as a transformer. Wires are inserted into, through and around a first hole and a first side of a core a desired number of times. Thereafter, the wires are extended along either a top or a bottom of the core and then passed through and around a second hole of the core. After the wires are wound around the second hole of the core and a second side of the core, the production of the device is complete.

Abstract: A component fixing device includes a holding portion for holding a component with a hollow portion while restricting a movement of the component; and a fixed portion elastically connected to the holding portion and to be fixed to an object. The holding portion is inserted into the hollow portion of the component for holding the component. The holding portion may have a center holding portion abutting against an outer surface of the component and a pair of arm portions disposed at both sides of the center holding portion and capable of bending relative to the center holding portion, so that the center holding portion and the arm portions sandwich the component.

Abstract: There is provided a transformer and a method of manufacturing the same. The transformer includes a bobbin wound with coils; cores having center leg parts inserted from both ends of the bobbin and contacting each other; and a shielding member preventing an inflow of an impregnant into the center leg parts inside the bobbin during a varnish impregnation of the cores.

Abstract: A laminated inductor includes a laminate having a plurality of insulating layers, a helical coil and first and second external electrodes on an underside of the laminate. The helical coil has coiled electrodes, each coiled up in one turn, and the first and second external electrodes are connected to respective, or corresponding, ends of the helical coil. Each of the coiled electrodes of the helical coil follow a path along the periphery of one of the insulating layers and include first end located in the path and second end located outside the path. The helical coil and the first external electrode are connected to each other by a lead via conductor formed in a space that is enclosed by parts of the coiled electrodes including the first and second ends.

Abstract: The disclosure relates to a transformer having a yoke which has a crosspiece and at least two limbs, over which limbs a coil is placed in each case, and having at least one carrier on which the crosspiece is fixed and which has bearing faces for the coils. At least two supporting blocks for each coil are mounted on each bearing surface. The supporting blocks are fitted with elastic compensation elements on the coil-side carrying face and have, on their longitudinal side faces, which run perpendicular to a carrying surface, at least one strip which extends the creepage path and runs in the longitudinal direction and parallel to the carrying surface of the supporting block.