Abstract: A semiconducting polymer formed from an insulator polymer and an ionic liquid is disclosed. In at least one embodiment, the semiconducting polymer may be formed from a homogenous blend of two or more insulator polymers and two or more ionic liquids. The homogenous mixture of non-conducting polymers and ionic liquid may be formed as a film of semiconducting polymer with a controllable thickness. The semiconducting polymer may be used in a multitude of different applications, including, but not limited to, storage devices.

Abstract: Provided are an organic light emitting device including: a substrate; a first electrode; a second electrode; and an organic layer interposed between the first electrode and the second electrode and including an emission layer, wherein one of the first electrode and the second electrode is a reflective electrode and the other is a semitransparent or transparent electrode, and wherein the organic layer includes a layer having at least one of the compounds having at least one carbazole group, and a flat panel display device including the organic light emitting device. The organic light emitting device has low driving voltage, excellent current density, high brightness, excellent color purity, high efficiency, and long lifetime.

Abstract: A substituted pyrene for electroluminescent applications and a method to produce the substituted pyrenes.

Abstract: To provide an organic EL element having high efficiency and long life, without accumulating holes at the interface between a light-emitting layer and a layer on the cathode side, and an organic light-emitting device. An organic EL element having a light-emitting layer between an anode and a cathode, wherein the light-emitting layer contains a light-emitting material and a charge-transporting material, the element has a hole relaxation layer adjacent to the cathode side of the light-emitting layer, the hole relaxation layer contains a hole-relaxing material, the hole-relaxing material is an organic compound having a hole-transporting unit and an electron-transporting unit, and at least one type of the charge-transporting material and at least one type of the hole-relaxing material are the same organic compound; and an organic light-emitting device containing such an element.

Abstract: A compound for an organic photoelectric device, the compound being represented by the following Chemical Formula (“CF”) 1:

Abstract: In view of the problem that an organic semiconductor layer of an organic TFT is likely to deteriorate due to water, light, oxygen, or the like, it is an object of the present invention to simplify a manufacturing step and to provide a method for manufacturing a semiconductor device having an organic TFT with high reliability. According to the invention, a semiconductor layer containing an organic material is formed by patterning using a mask, and thus an organic TFT is completed in the state where the mask is not removed but to remain over the semiconductor: layer. In addition, a semiconductor layer can be protected from deterioration due to water, light, oxygen, or the like by using the remaining mask.

Abstract: A quinoxaline derivative expressed by the general formula (1) is provided. (Each of R1 to R12 represents one of a hydrogen atom, a halogen atom, an alkyl group, an alkoxyl group, an acyl group, a dialkyl amino group, a diarylamino group, a substituted or unsubstituted vinyl group, a substituted or unsubstituted aryl group, and a substituted or unsubstituted heterocycle group. Ar1 represents one of a substituted or unsubstituted biphenyl group and a substituted or unsubstituted terphenyl group, and Ar2 represents one of a substituted or unsubstituted phenyl group, a substituted or unsubstituted biphenyl group, a substituted or unsubstituted terphenyl group, and a substituted or unsubstituted monocyclic heterocycle group.

Abstract: The organic electronic device prevents short-circuiting between electrodes and improves lifetime without deteriorating transmittance, driving voltage stability and storage stability thereof. The organic electronic device has a substrate and provided thereon, a first electrode and a second electrode opposed to each other and at least one organic functional layer located between the first and second electrodes. At least one of the first and second electrodes has an electrically conductive polymer-containing layer containing a hydrophilic polymer binder and an electrically conductive polymer having a ? conjugated electrically conductive polymer component and a polyanion component. At least a part of the electrically conductive polymer-containing layer is subjected to crosslinking, and the electrically conductive polymer-containing layer has been subjected to wet washing treatment.

Abstract: The present invention relates to a method for fabricating an organic device, said method comprising: (i) Providing a substrate (1) having a surface comprising electrical contact structures (4) and a dielectric portion (3), (ii) Providing a first temporary protection layer (9) on some or all of said electrical contact structures (4), (iii) Providing a first surface modification layer (6) on the dielectric portion (3) and/or providing a third surface modification layer (10) on said electrical contact structures (4) not protected in step (ii), (iv) Removing the first temporary protection layer (9), (v) Providing a second surface modification layer (5) on the electrical contact structures that where protected in step (ii), and (vi) Providing said first surface modification layer (6) on the dielectric portion (3), if it was not provided in step (iii), and (vii) Providing an organic semiconductor layer (7) on top of at least part of said first surface modification layer (6) and on top of said second (5) surface mod

Abstract: Provided is an organic photovoltaic cell having high photovoltaic efficiency. The photovoltaic cell of the present invention comprises an anode, a cathode, and an organic active layer provided between the anode and the cathode. The organic active layer comprises a multiexciton generator. For the multiexciton generator, a compound semiconductor comprising one or more elements selected from among Cu, In, Ga, Se, S, Te, Zn and Cd is used. The photovoltaic cell preferably has multiple energy levels in the energy gap of the compound semiconductor. The compound semiconductor is preferably a nanosize particle, and preferably has a p-type semiconductor adhering on the surface thereof.

Abstract: A novel fluorenylamine compound represented by a general formula below, where R1 to R6 are each independently selected from a hydrogen atom and alkyl groups; R21 to R23 are each independently selected from a hydrogen atom and the alkyl groups; and the alkyl groups are a methyl group, an ethyl group, a n-propyl group, an isopropyl group, a n-butyl group, an isobutyl group, a sec-butyl group, and a tert-butyl group.

Abstract: A benzo[k]fluoranthene derivative represented by the following formula (1): wherein R1 to R12 are as defined in the specification. The benzo[k]fluoranthene derivative represented by the formula (1) reduces a driving voltage of an organic electroluminescence device and makes it possible to realize light emission with high efficiency and long lifetime.

Abstract: It is an object to reduce concentration of an electric field on an end of a drain electrode of a semiconductor device. A semiconductor device includes an oxide semiconductor film including a first region and a second region; a pair of electrodes which is partly in contact with the oxide semiconductor film; a gate insulating film over the oxide semiconductor film; and a gate electrode that overlaps with part of one of the pair of electrodes and the first region with the gate insulating film provided therebetween. At least part of the first region and part of the second region are between the pair of electrodes. The gate electrode does not overlap with the other of the pair of electrodes.

Abstract: According to one embodiment, a thin film transistor includes a gate electrode, a semiconductor layer, a gate insulating film, and a source electrode and a drain electrode. The semiconductor layer includes an oxide including at least one of gallium and zinc, and indium. The gate insulating film is provided between the gate electrode and the semiconductor layer. The source electrode and a drain electrode are electrically connected to the semiconductor layer and spaced from each other. The semiconductor layer includes a plurality of fine crystallites dispersed three-dimensionally in the semiconductor layer and has periodicity in arrangement of atoms.

Abstract: An array substrate including a substrate having a pixel region, a gate line and a gate electrode on the substrate, the gate electrode being connected to the gate line, a gate insulating layer on the gate line and the gate electrode, an oxide semiconductor layer on the gate insulating layer, an auxiliary pattern on the oxide semiconductor layer, and source and drain electrodes on the auxiliary pattern, the source and drain electrodes being disposed over the auxiliary pattern and spaced apart from each other to expose a portion of the auxiliary pattern, the exposed portion of the auxiliary pattern exposing a channel region and including a metal oxide over the channel region, wherein a data line crosses the gate line to define the pixel region and is connected to the source electrode, a passivation layer on the source and drain electrodes and the data line.

Abstract: A PN junction includes first and second areas of silicon, wherein one of the first and second areas is n-type silicon and the other of the first and second areas is p-type silicon. The first area has one or more projections which at least partially overlap with the second area, so as to form at least one cross-over point, the cross-over point being a point at which an edge of the first area crosses over an edge of the second area.

Abstract: A method of dicing a semiconductor wafer includes forming a layer stack on a first main surface of a substrate. The layer stack and a portion of the substrate are etched according to a pattern defining an intended dicing location to obtain a trench structure. The substrate is irradiated with a laser beam to locally modify the substrate between a bottom of the trench structure and a second main surface of the substrate opposite to the first main surface.

Abstract: To improve the performance of a protection circuit including a diode formed using a semiconductor film. A protection circuit is inserted between two input/output terminals. The protection circuit includes a diode which is formed over an insulating surface and is formed using a semiconductor film. Contact holes for connecting an n-type impurity region and a p-type impurity region of the diode to a first conductive film in the protection circuit are distributed over the entire impurity regions. Further, contact holes for connecting the first conductive film and a second conductive film in the protection circuit are dispersively formed over the semiconductor film. By forming the contact holes in this manner, wiring resistance between the diode and a terminal can be reduced and the entire semiconductor film of the diode can be effectively serve as a rectifier element.

Abstract: A semiconductor device includes a semiconductor layer, a first insulating layer, a gate electrode which is formed on the first insulating layer and has a portion overlapping a channel region of the semiconductor layer with the first insulating layer sandwiched in between, a second insulating layer which is formed on the first insulating layer and covers the gate electrode, and a capacitor electrode which is formed on the second insulating layer and has a portion facing the gate electrode with the second insulating layer sandwiched in between. The second insulating layer has a thin portion, whose thickness is thinner than that of the second insulating layer in surrounding regions, on the portion of the gate electrode overlapping the channel region. A part of the capacitor electrode faces the portion of the gate electrode overlapping the channel region with the thin portion of the second insulating layer sandwiched in between.

Abstract: A display apparatus includes a substrate and a plurality of pixels disposed on the substrate. Each pixel includes a gate electrode disposed on the substrate, a gate dielectric layer disposed on the substrate and the gate electrode, an oxide semiconductor pattern disposed on the gate dielectric layer, a first insulating pattern disposed on the oxide semiconductor pattern that overlaps the gate electrode, a second insulating pattern disposed on the oxide semiconductor pattern and spaced apart from the first insulating pattern, source and drain electrodes spaced apart from each other on the oxide semiconductor pattern, a pixel electrode pattern disposed on the second insulating pattern to make contact with the source electrode, and a channel area defined where the oxide semiconductor pattern overlaps the gate electrode. A high carrier mobility channel is formed in the channel area when a turn-on voltage is applied to the gate electrode.

Abstract: An organic electroluminescent display device including a plurality of scan lines and a plurality of data lines crossing the scan lines, a plurality of pixels at regions defined by the scan lines and the data lines, and one or more thin-film transistors (TFTs) for selectively applying voltages to each of the pixels, wherein the data lines are successively located at a side of the pixels, and a first TFT of the TFTs is located at least partially between an area corresponding to an nth data line of the data lines and an area corresponding to an (n?1)th data line of the data lines, the nth data line and the (n?1)th data line being successively positioned.

Abstract: In a display substrate and a method of manufacturing the display substrate, the display substrate includes a data line, a channel pattern, an insulating pattern and a pixel electrode. The data line extends in a direction on a base substrate. The channel pattern is disposed in a separate region between an input electrode connected to the data line and an output electrode spaced apart from the input electrode. The channel pattern makes contact with the input electrode and the output electrode on the input and output electrodes. The insulating pattern is spaced apart from the channel pattern on the base substrate and includes a contact hole exposing the output electrode. The pixel electrode is formed on the insulating pattern to make contact with the output electrode through the contact hole. Thus, a damage of the oxide semiconductor layer may be minimized and a manufacturing process may be simplified.

Abstract: An organic light-emitting display includes a substrate including a pixel region and a transistor region; a first transparent electrode and a second transparent electrode formed over the pixel region and the transistor region of the substrate, respectively; a gate electrode formed over the second transparent electrode; a gate insulating film formed over the gate electrode; a semiconductor layer formed over the gate insulating film; a source and drain electrode having an end connected to the semiconductor layer and the other end connected to the first transparent electrode; a pixel defining layer disposed over the source and drain electrode to cover the source and drain electrode and having an opening disposed over the first transparent electrode; a light-blocking layer formed over the pixel defining layer; and an organic light-emitting layer formed over the first transparent electrode.

Abstract: Disclosed herein is a manufacturing method of a thin film transistor including: forming a channel layer made of an oxide semiconductor above a gate electrode with a gate insulating film provided therebetween, forming a channel protection film made of a conductive material adapted to cover the channel layer and forming a pair of source and drain electrodes in such a manner as to be in contact with the channel protection film; and removing the region of the channel protection film between the source/drain electrodes by etching relying on selectivity between the conductive material and crystalline oxide semiconductor.

Abstract: An array substrate includes: a plurality of display areas, an outer area of the display area, in which a common wiring and an external connection terminal, which is connected to one of the scanning wiring, the signal wiring, and the common wiring, are provided; a connection wiring, which connects the external connection terminal with the common wiring of an adjacent display panel; and a connection part, which has a contact hole provided at the common wiring of the adjacent display panel, wherein the connection wiring is disposed across the cutting position of the insulation substrate and is connected to the contact hole at the connection part, and wherein the connection part is disposed at an area, at which a sealing member to bond an opposite substrate disposed to face the display area, or the inner side of the sealing member, which is the display area side.

Abstract: A semiconductor device includes TFTs designed in accordance with characteristics of circuits. In a first structure of the invention, the TFT is formed by using a crystalline silicon film made of a unique crystal structure body. The crystal structure body has a structure in which rod-like or flattened rod-like crystals grow in a direction parallel to each other. In a second structure of the invention, growth distances of lateral growth regions are made different from each other in accordance with channel lengths, of the TFTs. By this, characteristics of TFTs formed in one lateral growth region can be made as uniform as possible.

Abstract: A thin-film transistor device manufacturing method of forming a crystalline silicon film of stable crystallinity using a laser of a wavelength in a visible region is provided. The thin-film transistor device manufacturing method forms a plurality of gate electrodes above a substrate. A gate insulation layer is formed on the plurality of gate electrodes. An amorphous silicon layer is formed on the gate insulation layer. The amorphous silicon layer is crystallized using predetermined laser light to produce a crystalline silicon layer. A source electrode and a drain electrode are formed on the crystalline silicon layer in a region that corresponds to each of the plurality of gate electrodes. A film thickness of the gate insulation layer and a film thickness of the amorphous silicon layer satisfy predetermined conditional expressions.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a dielectric material layer on a silicon substrate, the dielectric material layer being patterned to define a plurality of regions separated by the dielectric material layer; a first buffer layer disposed on the silicon substrate; a heterogeneous buffer layer disposed on the first buffer layer; and a gallium nitride layer grown on the heterogeneous buffer layer only within the plurality of regions.

Abstract: A semiconductor device includes a nitride semiconductor stacked structure including a carrier transit layer and a carrier supply layer; a p-type nitride semiconductor layer provided over the nitride semiconductor stacked structure and including an active region and an inactive region; an n-type nitride semiconductor layer provided on the inactive region in the p-type nitride semiconductor layer; and a gate electrode provided over the active region in the p-type nitride semiconductor layer.

Abstract: A semiconductor device includes: a semiconductor layer disposed above a substrate; an insulating film formed by oxidizing a portion of the semiconductor layer; and an electrode disposed on the insulating film, wherein the insulating film includes gallium oxide, or gallium oxide and indium oxide.

Abstract: A semiconductor device includes: a semiconductor chip having an electrode; a lead corresponding to the electrode; a metal line coupling the electrode to the lead; a first resin portion covering a coupling portion between the metal line and the electrode and a coupling portion between the metal line and the lead; and a second resin portion covering the metal line, the first resin portion, and the semiconductor chip.

Abstract: A nitride semiconductor substrate suitable for a normally-off type high breakdown-voltage device and a method of manufacturing the substrate are provided allowing both a higher threshold voltage and improvement in current collapse. In a nitride semiconductor substrate 10 having a substrate 1, a buffer layer 2 formed on one principal plane of the substrate 1, an intermediate layer 3 formed on the buffer layer 2, an electron transport layer 4 formed on the intermediate layer 3, and an electron supply layer 5 formed on the electron transport layer 4, the intermediate layer 3 has a thickness of 200 nm to 1500 nm and a carbon concentration of 5×1016 atoms/cm3 to 1×1018 atoms/cm3 and is of AlxGa1-xN (0.05?x?0.24), and the electron transport layer 4 has a thickness of 5 nm to 200 nm and is of AlyGa1-yN (0?y?0.04).

Abstract: A semiconductor device includes: a support base material, and a semiconductor element bonded to the support base material with a binder, the binder including: a porous metal material that contacts the support base material and the semiconductor element, and a solder that is filled in at least one part of pores of the porous metal material.

Abstract: Provided is an epitaxial substrate using a silicon substrate as a base substrate. An epitaxial substrate, in which a group of group-III nitride layers are formed on a (111) single crystal Si substrate such that a (0001) crystal plane of the group of group-III nitride layers is substantially in parallel with a surface of the substrate, includes: a first group-III nitride layer made of AlN with many defects configured of at least one kind from a columnar or granular crystal or domain; a second group-III nitride layer whose interface with the first group-III nitride layer is shaped into a three-dimensional concave-convex surface; and a third group-III nitride layer epitaxially formed on the second group-III nitride layer as a graded composition layer in which the proportion of existence of Al is smaller in a portion closer to a fourth group-III nitride.

Abstract: An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.

Abstract: The present power converter includes a power conversion semiconductor device, an electrode connection conductor which electrically connects multiple electrodes having the same potential, and also has a generally flat upper surface for electrically connecting to an exterior portion, and a sealing material provided so as to cover the power conversion semiconductor device, and also to expose the generally flat upper surface of the electrode connection conductor.

Abstract: A wide-band-gap reverse-blocking MOS-type semiconductor device includes a SiC n?-type drift layer; a p+-type substrate on the first major surface side of the drift layer; a trench extending through a p+-type substrate into the drift layer; a titanium electrode in the trench bottom that forms a Schottky junction with the SiC n?-type drift layer; an active section including a MOS-gate structure on the second major surface side of the drift layer facing to the area, in which the Schottky junctions are formed; a breakdown withstanding section surrounding the active section; and a trench isolation layer surrounding the breakdown withstanding section, the trench isolation layer extending from the second major surface of the drift layer into p+-type substrate and including insulator film buried therein. The device facilitates making a high current flow with a low ON-voltage and exhibits a very reliable reverse blocking capability.

Abstract: A SiC single crystal wafer on which a good quality epitaxial film by suppressing defects derived from the wafer can be grown has an affected surface layer with a thickness of at most 50 nm and a SiC single crystal portion with an oxygen content of at most 1.0×1017 atoms/cm3. This SiC single crystal wafer is manufactured from a high purity SiC bulk single crystal obtained by the solution growth method using raw materials with an oxygen content of at most 100 ppm and a non-oxidizing atmosphere having an oxygen concentration of at most 100 ppm.

Abstract: There are provided a semiconductor device of low cost and high quality, a combined substrate used for manufacturing the semiconductor device, and methods for manufacturing them. The method for manufacturing the semiconductor device includes the steps of: preparing a single-crystal semiconductor member; preparing a supporting base; connecting the supporting base and the single-crystal semiconductor member to each other through a connecting layer containing carbon; forming an epitaxial layer on a surface of the single-crystal semiconductor member; forming a semiconductor element using the epitaxial layer; separating the single-crystal semiconductor member from the supporting base by oxidizing and accordingly decomposing the connecting layer after the step of forming the semiconductor element; and dividing the single-crystal semiconductor member separated from the supporting base.

Abstract: An LED epitaxial structure includes a substrate, a buffer layer and an epitaxial layer. The buffer layer is grown on a top surface of the substrate, and the epitaxial layer is formed on a surface of the buffer layer. The epitaxial layer has a first n-type epitaxial layer and a second n-type epitaxial layer. The first n-type epitaxial layer is formed between the buffer layer and the second n-type epitaxial layer. The first n-type epitaxial layer has a plurality of irregular holes therein.

Abstract: An array substrate includes a substrate, a dummy pad and a driving signal output line. The substrate includes a display area displaying an image, and a peripheral area surrounding the display area. The dummy pad extends along a first direction in the peripheral area of the substrate, and includes a first protrusion portion protruding from an end portion of the dummy pad along the first direction. The driving signal output line extends along a second direction crossing with the first direction, is disposed adjacent to the dummy pad, and provides an external signal. Accordingly static electricity provided to the driving signal output line flows into the dummy pad having the first protrusion portion, so that static electricity may be prevented from flowing into the display area.

Abstract: A circuit comprising an array of light emitting diodes (LEDs), and a layer of VSD material positioned to contact an input and an output of each LED in the array of LEDs, so as to protect each LED from both a forward surge and a reverse surge of voltage on the array of LEDs. The layer of VSD material is able to switch into a carrying current state in response to either of the forward or reverse surge exceeding a characteristic voltage level (VCL) of the VSD material.

Abstract: A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer located over at least one semiconductor light-emitting chip in order to emit various colored lights including white light. The light-emitting device can include a base board, a frame located on the base board, the chip mounted on the base board, the wavelength converting layer located between an optical plate and the chip so as to extend from the optical plate toward the chip, and a reflective material layer disposed at least between the frame and both side surfaces of the wavelength converting layer and the optical plate.

Abstract: A lighting device having a novel structure for integration of a plurality of light-emitting elements, and a manufacturing method thereof are provided. In the lighting device, a plurality of light-emitting elements is electrically connected to each other through plugs (connecting members) and a connection wiring for integration. The connection wiring is provided on a counter substrate and the plugs are provided over an element substrate or for the counter substrate. Such a connection structure enables an appropriate electrical connection between the plurality of light-emitting elements in the lighting device.

Abstract: An organic electroluminescence display device is provided. The organic electroluminescence display device includes plural organic electroluminescence elements. Each organic electroluminescence element includes: a lower electrode; an insulating layer having an opening, in which a lower electrode is exposed at the bottom of the opening; an auxiliary wiring; a stacked structure provided from a portion over the lower electrode exposed at the bottom of the opening to a portion of the insulating layer surrounding the opening, including a light emitting layer made of an organic light-emitting material; and an upper electrode. At least one layer of the stacked structure partially contacts the auxiliary wiring. The insulating layer and the auxiliary wiring are provided in common to the plurality of organic EL elements. The upper electrode covers the whole surface of the stacked structures and the auxiliary wiring.

Abstract: A flat panel display and a method of fabricating the same are provided. The flat panel display includes a conductor, and a passivation layer pattern disposed on a side end of the conductor. As such, the passivation layer pattern can prevent or reduce corrosion and damage of the conductor. In one embodiment, the conductor includes a conductive layer formed of a material selected from the group consisting of aluminum and an aluminum alloy. The passivation layer pattern may be formed of an organic material or an inorganic material.

Abstract: A light emitting diode package for one or more light emitting diodes mounted on a substrate. A frame is disposed on at least a portion of the substrate and substantially surrounds, but does not contact, the light emitting diode. The frame is substantially transparent to light emitted from the light emitting diode and includes one or more first wavelength converting materials. The wavelength converting materials, which may be one or more phosphors, convert at least a portion of light emitted at the emission wavelength to different wavelength. A cover covers the light emitting diode within the frame. The cover layer includes one or more second wavelength converting materials differing from the first one or more wavelength converting materials in wavelength converting material concentration or in converted light wavelength or in combinations of wavelength converting materials.

Abstract: A light emitting device includes a white light emitting unit including a first light source emitting a white light; a red light emitting unit including a second light source emitting a white light and a red coating member having a red fluorescent material which converts the white light from the second light source into a red light; and a green light emitting unit including a third light source emitting a white light and a green coating member having a green fluorescent material which converts the white light from the third light source into a green light. The light emitting device further includes a driver for individually driving the white, the red and the green light emitting unit.

Abstract: An LED package module according to an aspect of the invention may include: a substrate having predetermined electrodes thereon; a plurality of LED chips mounted onto the substrate, separated from each other at predetermined intervals, and electrically connected to the electrodes; a first color resin portion molded around at least one of the plurality of LED chips; a second color resin portion molded around all of the LED chips except for the LED chip around which the first color resin portion is molded, and having a different color from the first color resin portion; and a third color resin portion encompassing both the first color resin portion and the second color resin portion and having a different color from the first color resin portion and the second color resin portion.

Abstract: The present invention provides a light emitting device, comprising a first light emitting diode for emitting light in an ultraviolet wavelength region; at least one phosphor arranged around the first light emitting diode and excited by the light emitted from the first light emitting diode to emit light having a peak wavelength longer than the wavelength of the light emitted from the first light emitting diode; and at least one second light emitting diode for emitting light having a wavelength different from the peak wavelength of the light emitted from the phosphor.