Abstract: A magnetic memory cell is provided that includes a free layer that is pinned on both of its sides to form one or more domain wall structures. The one or more domain wall structures define one or more logic states by controlling the motion of the one or more domain wall structures.

Abstract: A signal driver circuit having an adjustable output voltage for a high-logic level output signal. The signal driver circuit includes a signal driver configured to output a first logic level signal having a first voltage and output a second logic level signal having a second voltage according to an input signal. A voltage controlled voltage supply coupled to the signal driver provides the first voltage for the first logic level signal. The magnitude of the first voltage provided by the voltage controlled voltage supply is based on a bias voltage. A bias voltage generator can be coupled to the voltage controlled voltage supply to provide the bias voltage.

Abstract: A dynamic logic gate includes a nano-electro-mechanical-switch, preferably a four-terminal-nano-electro-mechanical-switch. The invention further refers to dynamic logic cascade circuits comprising such a dynamic logic gate. In particular, embodiments of the invention concern dynamic logic cascade circuits comprising single or dual rail dynamic logic gates.

Abstract: Various embodiments of a method and apparatus for performing adaptive voltage adjustment based on temperature value are disclosed. In one embodiment, and integrated circuit (IC) includes logic circuitry having at least one temperature sensor therein. The IC also includes a power management circuit coupled to receive temperature readings from the temperature sensor. The power management circuit is configured to determine a temperature of the IC based on a temperature reading received from the temperature sensor. The power management circuit may compare the determined temperature to a temperature threshold. If the temperature exceeds a temperature threshold value, the power management circuit may cause the operating voltage to be reduced by an amount equivalent to a voltage guard band.

Abstract: An integrated circuit includes a plurality of semiconductor devices. Each of the semiconductor devices includes an internal voltage generation unit configured to generate a plurality of internal voltages, a voltage select output unit configured to output a default voltage of a plurality of internal voltages to a preset pad in response to an initial value of a select code, and selectively output the other voltages of the plurality of internal voltages to the pad in response to variations of the select code, and a stack operation control unit configured to control the voltage select output unit to output the default voltage to the pad in response to a stack signal and a predetermined value of the select code, instead of the initial value of the select code, and whether or not to activate the stack signal is determined according to whether or not the plurality of semiconductor devices are stacked.

Abstract: A power-on reset circuit is disclosed. The power-on reset circuit includes a first resistor; a first transistor, including a first terminal coupled to a second terminal of the first resistor, and a control terminal for receiving a reference voltage; a second resistor, including a first terminal coupled to a second terminal of the first transistor; a second transistor, including a first terminal coupled to a second terminal of the first resistor, and a control terminal coupled to a second terminal of the second transistor and utilized for receiving an input voltage; and a comparator, including a first input terminal for receiving a comparison voltage, and a second input terminal for receiving the reference voltage, for generating a power-on reset signal according to the comparison voltage and the reference voltage.

Abstract: A method for operating an output module having an output circuit by which a voltage resulting in a current is connected to a load connected to an output, wherein a first driver module is operated and activated via a first control input to connect a voltage to the output, a second driver module is operated in parallel with the first driver module and activated via a second control input to also connect a voltage to the output, at a start time a control circuit receives a switching command for switching the voltage to the output, and wherein the control circuit initially starts by reciprocally activating the first and second control inputs respectively for a first time period, and wherein during this reciprocal activation, the first and second driver modules conduct the current for each respective duration of first and second activation periods.

Abstract: Disclosed is a frequency synthesizer including first and second shift register circuits 3a and 3b each for outputting PLL setting data on a rising edge of a load enable signal, first and second fractional modulators 4a and 4b each for generating dividing number control data on the basis of the PLL setting data in synchronization with a reference signal, and first and second fractional PLL synthesizers 5a and 5b each for generating a high frequency signal according to the PLL setting data, the reference signal, and the dividing number control data. By controlling the timing of the load enable signal, the frequency synthesizer carries out phase control between the high frequency signals generated by the first and second fractional PLL synthesizers 5a and 5b.

Abstract: A voltage mode driver circuit includes a plurality of VMD cells and a calibration component. The plurality of VMD cells are configured to generate a calibrated emphasis level according to a calibration signal. The calibration component is configured to determine a voltage dependence effect. Additionally, the calibration component is configured to generate the calibration signal according to the determined voltage dependence effect.

Abstract: Various exemplary embodiments relate to a current driver for controlling a current source controlled by an alternating current (AC) signal, including: a current sensor configured to measure an output current from the current source; a threshold detector configured to detect when the measured current is below a threshold value; and a controller configured to control the current source using a duty cycle of the AC signal when the measured current is below the threshold.

Abstract: A method for operating an output subassembly in which a first driver module is operated between a power supply connection on the output subassembly, and an output and is actuated via a first control input to connect the voltage to the output, wherein a second driver module is operated in parallel with the first driver module and is actuated, via a second control input, to connect a voltage to an output, where at an initial time a control circuit receives a command to switch the voltage to the output and the control circuit thereupon initially actuates the second control input for a predefined first length of time, so that the second driver module is operated with current limitation up to a maximum current and, after a predefined second length of time, measured from the initial time, the control circuit actuates the first control input when the command is in effect.

Abstract: A controller of a drive unit is configured so as to control a voltage supplied to a gate resistor of a voltage-driven element by using of a voltage of a feedback connector when an electrical connection between the feedback connector and the gate resistor of the voltage-driven element is ensured. Further, the controller of the drive unit is configured so as to control the voltage supplied to the gate resistor of the voltage-driven element by using of a voltage of an output connector when the electrical connection between the feedback connector and the gate resistor of the voltage-driven element is not ensured.

Abstract: A driver circuit includes first switch, configured to selectively couple a first driving node to a power supply node, and a second switch, configured to selectively couple a second driving node to a ground node. The first driving node is coupled to each transistor in a first set of PMOS transistor(s) and the second driving node is coupled to each transistor in a second set of NMOS transistor(s). The driver circuit is configured to propagate a first drive signal in a first direction along an electrical path for biasing the first and second sets of transistors when the transistors in the first set, before receiving the first drive signal, are in a first state. The driver circuit is configured to propagate a second drive signal in a second direction along the path when the transistors in the first set, before receiving the second drive signal, are in a second state.

Abstract: A circuit usable as a word line driver includes a driver that switches in response to a voltage on a control node, and a circuit supplying a voltage to the control node. The circuit that applies a voltage to control node provides a first static current tending to pull the control node up to a first source voltage, and provides a fighting current pulse in response to a signal selecting the driver to pull the control node down to a second source voltage, overcoming the first static current. In addition, a circuit provides a pull-up boost current on a transition of the signal selecting the driver that turns off the fighting current, and applies a boosting current pulse to the control node to assist pulling the control node quickly to the first source voltage.

Abstract: Disclosed is a semiconductor device arrangement including a first semiconductor device having a load path, and a plurality of second transistors, each having a load path between a first and a second load terminal and a control terminal. The second transistors have their load paths connected in series and connected in series to the load path of the first transistor, each of the second transistors has its control terminal connected to the load terminal of one of the other second transistors, and one of the second transistors has its control terminal connected to one of the load terminals of the first semiconductor device.

Abstract: The core concept of this ADC is the high-speed fully-differential comparators which are clocked at 2.64 GHz and used in a 60 GHz transceiver. The comparator consists of a pre-amplifier stage, a capture stage, a regeneration cell and an output latch. The pre-amplifier stage is not clocked; therefore, the pre-amplifier stage does not suffer initialization and transient behavior effects when the clock signal switches state. The transient response of being enabled and disabled is eliminated. Instead, a capture stage transfers the contents of the pre-amplifier stage into a memory regeneration stage. The capture stage is clocked by pulses that are timed to minimize the clock kick-back generated by the memory regeneration stage. The clock kick-back is reduced even when many comparators are coupled to the PGA. The comparators, instead of having extra dummy fingers, are also aligned right next to each other to minimize the mismatching layout effect.

Abstract: A semiconductor device includes a division unit configured to divide an oscillation signal and to generate a plurality of divided signals having different division ratios each other, a delay amount determination unit configured to combine an source signal, the oscillation signal, and the plurality of divided signals and to generate a delay amount information signal with information on a given delay amount, and an edge-delayed signal output unit configured to generate at least one edge-delayed signal corresponding to the given delay amount in response to the source signal and the delay amount information signal.

Abstract: Presented systems and methods facilitate efficient reset operation. In one embodiment, a system comprises a core domain portion an I/O domain portion and a core reset I/O by-pass component. The core domain portion is configured to operate at a nominal core domain voltage level. The I/O domain portion configured to operate at a nominal I/O domain voltage level. The core reset I/O by-pass component configured to forward a reset indication to the core domain independent of the I/O domain. In one exemplary implementation the core reset I/O by-pass component is operable to receive an input reset indication at a high domain voltage level and to convert the input reset indication to a core reset signal that is less than or substantially equal to the nominal core domain voltage, wherein the high domain is voltage higher than the core domain voltage level.

Abstract: Embodiments include systems and methods for asynchronous, glitch-free clock switching across a wide range of clock frequencies with minimal clock down time. Embodiments effectively provide two stages of synchronization across two independent clock domains. In a first synchronization stage, a received, asynchronous clock select signal is translated into a synchronized clock select signal that is effectively synchronous with respect to a first clock domain and is still effectively asynchronous with respect to a second clock domain. In a second synchronization stage, the synchronized clock select signal is resynchronized so as to be effectively synchronous with respect to the second clock domain. The synchronized select signal can be used to disable the clock of the first clock domain, and the resynchronized clock select signal can be used to enable the clock of the second clock domain.

Abstract: The disclosed embodiments relate to a digital phase-locked loop (PLL) with dynamic gain control. This digital PLL includes a phase detector which receives a reference signal and a feedback signal as inputs and produces an output signal comprising up/down values. It also includes a digital loop filter which receives the phase-detector output signal as an input and produces an M-bit output signal. This digital loop filter is associated with a loop-parameter control unit (LPCU) which dynamically generates loop-filter parameters for the digital loop filter based on an observed pattern of up/down values from the phase-detector output over a specified period of time. A digitally controlled oscillator (DCO) receives the loop-filter output signal and produces a PLL output signal. Finally, a feedback path returns the PLL output signal to the phase detector.

Abstract: A phase locked loop comprises a loop filter and a charge pump circuit. The loop filter comprises a parallel capacitor, a serial resistor and a serial capacitor. A first terminal of the serial resistor is electrically connected to a first terminal of the parallel capacitor. A first terminal of the serial capacitor is electrically connected to the second terminal of the serial resistor, and a second terminal of the serial capacitor is electrically connected to a second terminal of the parallel capacitor. The charge pump circuit comprises a first charge pump and a second charge pump. The first charge pump is electrically connected to the first terminal of the serial resistor, and the second charge pump is electrically connected to the second terminal of the serial resistor. The phase lock loop can reduce output jitter and therefore increases the performance of the phase lock loop.

Abstract: In various embodiments, systems and methods for generating high-precision pulse-width modulation include a delay-locked loop comprising multiple delay units having time-variable delays, control logic for selecting a subset S of the multiple delay units to thereby generate a time-invariant shift amount having a precision finer than that of a system clock and circuitry for applying the shift amount to rising and falling edges of a pulse-width modulation waveform to thereby generate a high-precision pulse-width modulation waveform.

Abstract: A delay-locked loop (DLL) circuit having improved phase correction performance includes a variable delay unit configured to generate a DLL clock signal by delaying an input clock signal by a varied delay time in response to a delay control signal at timing corresponding to an update cycle signal, a delay model configured to generate a feedback clock signal by delaying the DLL clock signal for a predetermined delay time, a phase detection unit configured to output a result of the detection of the phase of the feedback clock signal based on a reference clock signal as the delay control signal, and an update cycle control unit configured to determine whether a cycle has been shifted or not in response to an external clock signal and the delay control signal and shift a cycle where the update cycle signal is generated based on a result of the determination.

Abstract: A semiconductor device includes a delay locked loop unit configured to compare a phase of an internal clock with a phase of a feedback clock to delay the internal clock by a delay amount corresponding to a comparison result, and to output a delay locked clock, a delay replica modeling unit configured to output the feedback clock by reflecting a transfer delay amount of the internal clock used in an internal circuit into the delay locked clock, and to adjust the transfer delay amount in response to a delay replica adjustment signal, and a delay replica adjustment signal generation unit configured to compare the phase of the feedback clock with a phase of the delay locked clock, and to set a value of the delay replica adjustment signal in response to a comparison result.

Abstract: A delay time control circuit is provided which includes a delay locked loop generating a second clock signal delayed by a predetermined time in response to a first clock signal; a plurality of delay circuits each receiving the first and second clock signals and outputting third and fourth clock signals in response to first and second digital clock signals; and a feedback control unit receiving the third and fourth clock signals to detect a delay time and generating the first and second digital control signals for compensating the detected delay time.

Abstract: Techniques are disclosed relating to detecting and minimizing timing problems created by clock domain crossing (CDC) in integrated circuits. In various embodiments, one or more timing parameters are associated with a path that crosses between clock domains in an integrated circuit, where the one or more timing parameters specify a propagation delay for the path. In one embodiment, the timing parameters may be distributed to different design stages using a configuration file. In some embodiments, the one or more parameters may be used in conjunction with an RTL model to simulate propagation of a data signal along the path. In some embodiments, the one or more parameters may be used in conjunction with a netlist to create a physical design for the integrated circuit, where the physical design includes a representation of the path that has the specified propagation delay.

Abstract: A multiphase clock divider includes: a reference clock generator for generating a plurality of reference clocks; and at least one output clock generator including a first multiplexer for selecting to output a selected reference clock, a second multiplexer for selecting to output a first selected input clock, a third multiplexer for selecting to output a second selected input clock, a first flip-flop for outputting a first sampling clock according to the selected reference clock and the first selected input clock, a second flip-flop for outputting a second sampling clock according to the first sampling clock and the second selected input clock, and a fourth multiplexer for selecting to output the first sampling clock or the second sampling clock to generate an output clock.

Abstract: Provided is a method for reducing output data noise of a semiconductor apparatus which includes a plurality of output buffers to output data. The method includes the steps of: driving low data to a specific output buffer among the plurality of output buffers, and driving data transiting from a high level to a low level to the other output buffers; and measuring the magnitude of data noise occurring in output data of the specific output buffer, and deciding slew rates of the plurality of output buffers based on the measurement result.

Abstract: A current mode controlled power converter controllable in a digitally processing current mode even during an on time. In the power converter, each control period based on a reference signal includes a slope calculation period in which a slope compensation signal for the control period is calculated by a slope compensation unit. During each slope calculation period, the slope compensation unit negates the slope compensation signal calculated previous to the control period including the slope calculation period, and a reset signal generation unit compares a current detection signal detected by a current detection unit with a current instruction set to an error signal generated by an error signal generation unit to generate a reset signal.

Abstract: A method includes receiving an input clock signal at a programmable buffer. The method further includes filtering an output signal from the programmable buffer to generate a filtered signal having a voltage level, where the voltage level indicates a duty cycle of the output signal. The method further includes comparing the voltage level to a reference voltage. The method further includes modifying at least one operating parameter of the programmable buffer to adjust the duty cycle of the output signal.

Abstract: A device (300, 1000) provides a dual-edge triggered flip-flop (DETFF) that is reconfigurable to a master-slave flip-flop (MSFF). The device includes a reconfigurable MUX-D flip-flop including two distinct circuit configurations. In a first configuration, two latches or storage elements (340, 360, 1040, 1060) are operating in series to provide a MUX-D flip-flop. In a second configuration, the storage elements (340, 360, 1040, 1060) are operating in parallel to provide a dual-edge triggered flip-flop (DETFF).

Abstract: Presented systems and methods facilitate efficient switching operations for components operating at different voltage level than a received signal voltage level. In one embodiment, the components of a presented system are operable to perform switching operations for signals with a voltage level swing larger than the power rail of the circuit receiving the signals. In one embodiment a system includes an input component, a transition component, a transition point feedback component and an output component. The input component is operable to receive an input signal. The transition component is operable to transition the input signal. The transition point feedback component is operable to adjust a point at which a transition in the input signal occurs in the transition component. The output component is operable to forward an output signal from the transition point feedback component.

Abstract: An integrated circuit includes a plurality of resonant clock domains of a resonant clock network. Each resonant clock domain has at least one clock driver that supplies a portion of clock signal to an associated resonant clock domain. The resonant clock network operates in a resonant mode with inductors connected to pairs of resonant clock domains at boundaries between the resonant clock domains. Each inductor forms an LC circuit with clock load capacitance in the pair of resonant clock domains to which the inductor is connected.

Abstract: A clock system of an integrated circuit includes first and second transistors forming a switch that is used when switching the clock system between a resonant mode of operation and a non-resonant mode of operation. An inductor forms a resonant circuit with capacitance of the clock system in resonant mode. The switch receives a clock signal and supplies the clock signal to the inductor when the switch is closed and disconnects the inductor from the clock system when the switch is open. First and second high impedance voltage sources supply respective first and second voltages to the switch and a gate voltage of the first transistor transitions with the clock signal around the first voltage and a gate voltage of the second transistor transitions with the clock signal around the second voltage such that near constant overdrive voltages are maintained for the first and second transistors.

Abstract: A clock driver circuit supplies a clock signal with a drive strength determined according to one or more control signals supplied to the clock driver that vary during run-time. The clock driver is operated with a first drive strength in a non-resonant mode of operation of an associated clock network and with a second drive strength in a resonant mode of operation of the associated clock network, the first drive strength being higher than the second drive strength.

Abstract: A clock driver for a resonant clock network includes a delay circuit that receives and supplies a delayed clock signal. A first transistor is coupled to receive a first pulse control signal and supply an output clock node of the clock driver. An asserted edge of the first control signal is responsive to the falling edge of the delayed clock signal. A second transistor is coupled to receive a second control signal and to supply the output clock node of the clock driver. An asserted edge of the second control signal is responsive to a rising edge of the delayed clock signal.

Abstract: A resonant clock network includes an inductor coupled to the clock network through a plurality of switches. When the clock network enters resonant mode, the turn-on of the switches to couple the inductor to the clock network is staggered. The clock network may be formed of multiple regions, each with its own inductor and switches. The turn-on of switches of each region may be staggered with respect to the turn-on off the switches of the other regions as well as to the turn-on of switches within a region. In addition to staggering the turn-on of the switches when entering the resonant mode, the switches may be turned off in a staggered manner when exiting the resonant mode of operation.

Abstract: A method for increasing the accuracy of a time-domain apparatus comprising the following steps: initiating a periodic oscillation with the time-domain apparatus; measuring time intervals between trigger events during each oscillation, wherein the trigger events correspond to the oscillation passing known values; detecting a perturbation to the oscillation by monitoring changes in the time intervals between trigger events; and adjusting a parameter of the oscillation based on the perturbation such that measurement error is reduced.

Abstract: A differential output buffer includes first and third switches and second and fourth switches which are connected in series respectively between a first voltage source and a current source, and a replica circuit includes a second voltage source which is equivalent to a first voltage source. A current control circuit controls a current flowing to the current source in such a manner that a voltage of a third node between two resistive elements connected in series between a first node between the first and third switches and a second node between the second and fourth switches and having an equal resistance value is equal to a reference voltage, for example, and a voltage control circuit generates a control signal in such a manner that a voltage of any node excluding an output terminal of the second voltage source in the current path is equal to a second reference voltage.

Abstract: A comparator apparatus includes an amplifier and one or more latched comparators connected to the amplifier that compares input voltage signals to predefined reference voltage signals. The comparator apparatus includes an offset that limits the minimum input differential voltage signal with respect to the predefined voltage signals. A calibration component is electrically connected to the latched comparator and assists in continuously measuring and compensating the offset.

Abstract: An overdrive circuit includes a pull-up circuit and a pull-down circuit. The pull-down circuit includes first, second and third transistors electrically connected in cascode between an output node and a low voltage supply node. A capacitor is electrically connected from a gate electrode of the third transistor to a gate electrode of the first transistor. A first mono-directional bias device is electrically connected from a drain electrode of the first transistor to a gate electrode of the first transistor. A second mono-directional bias device is electrically connected from the gate electrode of the first transistor to a source electrode of the first transistor.

Abstract: A voltage conversion mask signal generation circuit generates a first main signal and a first mask signal by converting an output signal of the first transistor to a low-side voltage, and generating a second main signal and a second mask signal by converting an output signal of the second transistor to a low-side voltage. A mask signal generation circuit generating a third mask signal with higher sensitivity than the first and second mask signals with respect to a fluctuation in the high-side reference potential. A mask logical circuit generating a fourth mask signal by performing a AND operation between the first mask signal and the second mask signal, and masking the first and second main signals with the third and fourth mask signals; and a SR flip flop circuit generating the output signal from the masked first and second main signals.

Abstract: Provided is a single input level shifter. The single input level shifter includes: an input unit applying a power voltage to a first node in response to an input signal and applying the input signal to a second node in response to a reference signal; a bootstrapping unit applying the power voltage to the second node according to a voltage level of the first node; and an output unit applying the input signal to an output terminal in response to the reference signal and applying the power voltage to the output terminal according to the voltage level of the first node, wherein the bootstrapping unit includes a capacitor between the first and second nodes, and when the input signal is shifted from a first voltage level to a second voltage level, the bootstrapping unit raises the voltage level of the first node to a level higher than the power voltage.

Abstract: Disclosed is a level shift device. The level shift device to convert an input signal having a low-voltage level into an output signal having a high-voltage level includes a latch-type level shifter and a voltage generator. The latch-type level shifter includes two upper pull-up P channel transistors and two lower P channel transistors to prevent the gate-source voltage breakdown of the two upper pull-up P channel transistors. The two upper pull-up P channel transistors and the two lower P channel transistors form a latch structure. The voltage generator generates a voltage to prevent the gate-source voltage brake down of the two upper pull-up P channel transistors and provides the voltage to the gate electrodes of the two lower P channel transistors.

Abstract: Methods and systems for vector combining power amplification are disclosed herein. In one embodiment, a plurality of signals are individually amplified, then summed to form a desired time-varying complex envelope signal. Phase and/or frequency characteristics of one or more of the signals are controlled to provide the desired phase, frequency, and/or amplitude characteristics of the desired time-varying complex envelope signal. In another embodiment, a time-varying complex envelope signal is decomposed into a plurality of constant envelope constituent signals. The constituent signals are amplified equally or substantially equally, and then summed to construct an amplified version of the original time-varying envelope signal. Embodiments also perform frequency up-conversion.

Abstract: Disclosed is a radio frequency (RF) switch branch having a reduced nonlinearity and an associated method for reducing nonlinearity in a RF switch branch. The RF switch branch includes a primary transistor, a first transistor having power terminals electrically connected between a drain node and a body node of the primary transistor, and a second transistor having power terminals electrically connected between the body node and a source node of the primary transistor. The RF switch may further include a body resistor electrically connected between the body node of the primary transistor and ground, and a gate resistor electrically connected between a gate of the primary transistor and a gate voltage source. A gate of each of the first transistor and the second transistor is electrically connected to the gate voltage source such that the first transistor and the second transistor are ON only when the primary transistor is ON.

Abstract: The semiconductor device includes first and second output terminals each coupled to one end side and another end side of an inductive or capacitive load, a first MOS transistor coupled between a first voltage and the first output terminal, a second MOS transistor coupled between a second voltage and the first output terminal, a third MOS transistor coupled between the first voltage and the second output terminal, a fourth MOS transistor coupled between the second voltage and the second output terminal, and a drive circuit driving the first to fourth MOS transistors for controlling the inductive or capacitive load, and further includes first and second bypass transistors for bypassing a forward current of a parasitic diode of a PN-junction formed in the MOS transistor in the dead-off period.

Abstract: A radio frequency (RF) switch includes a common port, a first port, and a second port, a first semiconductor switching element disposed in a first RF pathway between the common port and the first port, a second semiconductor switching element disposed in a second RF pathway between the common port and the second port, a first pair of direct current (DC) blocking capacitors disposed to isolate the first semiconductor switching element in the first RF pathway, and a second pair of DC blocking capacitors disposed to isolate the second semiconductor switching element in the second RF pathway. The respective pairs of DC blocking capacitors allow for different bias voltages to be applied to the respective RF pathways. A charge-discharge circuit may also be employed to decrease transient switching time of the RF switch.

Abstract: A semiconductor structure comprising a substrate, an active device, a field oxide layer and a poly-silicon resistor is disclosed. The active device is formed in a surface area of the substrate. The active device has a first doped area, a second doped area and a third doped area. The second doped area is disposed on the first doped area. The first doped area is between the second and the third doped areas. The first doped area has a first type conductivity. The third doped area has a second type conductivity. The first and the second type conductivities are different. The field oxide layer is disposed on a part of the third doped area. The poly-silicon resistor is disposed on the field oxide layer and is electrically connected to the third doped area.

Abstract: Apparatus for fluid control device monitoring are disclosed. An example apparatus includes a body through which a shaft extends. The shaft is to be coupled to an actuator. An angular position of the shaft is based on a position of the actuator. The apparatus includes a target coupled to the shaft and a circuit including a user configurable switch and a proximity switch. The user configurable switch is configurable to a first state or a second state. When the user configurable switch is in the first state and the target is distant from the proximity switch, the circuit is to output a first signal. When the user configurable switch is in the second state and the target is distant from the proximity switch, the circuit is to output a second signal different than the first signal.