Patents Issued in November 27, 2014
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Publication number: 20140346478Abstract: An organic light emitting diode display includes a first transistor on a substrate, a first electrode connected to the first transistor, and a pixel definition layer on the first electrode. The pixel definition layer has an opening exposing the first electrode. A spacer is formed at the opening. An organic emission layer is on the exposed first electrode, and a second electrode on the organic emission layer.Type: ApplicationFiled: April 30, 2014Publication date: November 27, 2014Applicant: SAMSUNG DISPLAY CO., LTD.Inventor: Young Min CHO
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Publication number: 20140346479Abstract: An organic device, including an organic compound having charge-transporting ability (i.e., transporting holes and/or electrons) and/or including organic light emissive molecules capable of emitting at least one of fluorescent light or phosphorescent light, has a charge transfer complex-contained layer including a charge transfer complex formed upon contact of an organic hole-transporting compound and molybdenum trioxide via a manner of lamination or mixing thereof, so that the organic hole-transporting compound is in a state of radical cation (i.e., positively charged species) in the charge transfer complex-contained layer.Type: ApplicationFiled: May 12, 2014Publication date: November 27, 2014Inventors: Junji Kido, Toshio Matsumoto, Takwshi Nakada
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Publication number: 20140346480Abstract: A light emitting element includes a first electrode, a second electrode, and an organic layer in which a first luminescent layer and a second luminescent layer are provided from a first electrode side, the organic layer being provided between the first electrode and the second electrode, light from the organic layer being reflected on an interface of the luminescent layer and the first electrode, passing through the second electrode, and being emitted to outside, a first optical transparent layer, a second optical transparent layer, and a third optical transparent layer being provided, from a second luminescent layer side, on a side of the second luminescent layer, the side being opposite to the first luminescent layer.Type: ApplicationFiled: May 15, 2014Publication date: November 27, 2014Applicant: Sony CorporationInventors: Toshihiro FUKUDA, Kohji HANAWA
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Publication number: 20140346481Abstract: There is provided a light emitting device in which low power consumption can be realized even in the case of a large screen. The surface of a source signal line or a power supply line in a pixel portion is plated to reduce a resistance of a wiring. The source signal line in the pixel portion is manufactured by a step different from a source signal line in a driver circuit portion. The power supply line in the pixel portion is manufactured by a step different from a power supply line led on a substrate. A terminal is similarly plated to made the resistance reduction. It is desirable that a wiring before plating is made of the same material as a gate electrode and the surface of the wiring is plated to form the source signal line or the power supply line.Type: ApplicationFiled: May 23, 2014Publication date: November 27, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Jun Koyama, Mai Osada
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Publication number: 20140346482Abstract: An aromatic amine derivative is represented by the following formula (1). In the formula (1), R1 to R10 each independently represent a hydrogen atom and a substituent. In the formula (1); R1 is represented by the following formula (2); any one of R2 to R5 and R7 to R10 is represented by the following formula (2); and L1 to L3 each independently represent a single bond, a divalent residue of an aryl group, or the like. In the formula (2); Ar1 is a monovalent substituent having a partial structure represented by the following formula (3); X represents an oxygen atom or a sulfur atom; and A and B represent a six-membered ring. In the formula (2), Ar2 is an aryl group, a monovalent substituent having a partial structure represented by the formula (3), and the like.Type: ApplicationFiled: September 14, 2012Publication date: November 27, 2014Applicant: IDEMITSU KOSAN CO., LTD.Inventors: Yumiko Mizuki, Hirokatsu Ito
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Publication number: 20140346483Abstract: Disclosed are a compound for an organic optoelectronic device, an organic light emitting diode including the same, and a display device including the organic light emitting diode. The compound for an organic optoelectronic device represented by a combination of the following Chemical Formula 1; and Chemical Formula 2 or 3 provides an organic light emitting diode having life-span characteristics due to excellent electrochemical and thermal stability, and high luminous efficiency at a low driving voltage.Type: ApplicationFiled: September 25, 2012Publication date: November 27, 2014Inventors: Eun-Sun Yu, Moo-Jin Park, Ho-Jae Lee, Mi-Young Chae
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Publication number: 20140346484Abstract: A organic EL display panel includes an inter-layer insulation film, a pixel electrode, auxiliary wiring, a partition layer, an organic light-emitting layer, and a common electrode. The inter-layer insulation film has at least one paired concave portion and non-concave portion disposed in a region over the auxiliary wiring, a top face of the concave portion being concave with respect to a top face of the non-concave portion, and the auxiliary wiring includes a part over the concave portion and a part over the non-concave portion, a top face of the part over the concave portion being concave with respect to a top face of the part over the non-concave portion.Type: ApplicationFiled: November 20, 2012Publication date: November 27, 2014Applicant: Panasonic CorporationInventors: Kenichi Nendai, Takashi Osako, Naoko Mizusaki
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Publication number: 20140346485Abstract: Provided is a display (1) including: an insulating layer (19) having an opening (19M); and a light-emission device (10) including a functional layer (15) and provided in the opening of the insulating layer, the functional layer being provided between a first electrode (14) and a second electrode (16) and including a light emitting layer. The insulating layer includes a low-refractive-index layer, the low-refractive-index layer being made of a material having a lower refractive index than a refractive index of a layer (15A), and the layer (15A) being in proximity to the insulating layer and included in the functional layer.Type: ApplicationFiled: November 1, 2012Publication date: November 27, 2014Inventors: Makoto Noda, Mao Katsuhara
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Publication number: 20140346486Abstract: A light-emitting composition comprises a polymer and a phosphorescent light-emitting material. The polymer comprises conjugating repeat units of formula (I) and up to 20 mol % of conjugation-blocking repeat units of repeat units of formula (II): Ar1 represents an aryl or heteroaryl group; R1, which may be the same or different in each occurrence, is a substituent; p is 0 or an integer; Ar2 in each occurrence independently represents a substituted or unsubstituted aryl or heteroaryl group; and Sp1 represents an acyclic spacer group that does not provide any conjugation path between the two groups Ar2. Optionally, p is 0, 1, 2, 3 or 4 and each R1 is a non-polar substituent. Each R1 is advantageously selected from C1-30 hydrocarbyl substituents. A light-emitting device comprises an anode, a cathode and a light-emitting layer between the anode and the cathode, the light-emitting layer comprising a light-emitting composition as described.Type: ApplicationFiled: December 20, 2012Publication date: November 27, 2014Inventors: Helen Middleton, Martin Humphries, Richard Wilson
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Publication number: 20140346487Abstract: A display device having at least a plurality of pixel circuits, connected to signal lines to which data signals in accordance with luminance information are supplied, arranged in a matrix, wherein pixel circuits of odd number columns and even number columns adjacent sandwiching an axis in a column direction parallel to an arrangement direction of the signal lines have a mirror type circuit arrangement symmetric about the axis of the column direction, and there are lines different from the signal lines between signal lines of adjacent pixel circuits.Type: ApplicationFiled: August 6, 2014Publication date: November 27, 2014Applicant: Sony CorporationInventor: Mitsuru Asano
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Publication number: 20140346488Abstract: The present invention has an object of providing a light-emitting device including an OLED formed on a plastic substrate, which prevents degradation due to penetration of moisture or oxygen. On a plastic substrate, a plurality of films for preventing oxygen or moisture from penetrating into an organic light-emitting layer in the OLED (“barrier films”) and a film having a smaller stress than the barrier films (“stress relaxing film”), the film being interposed between the barrier films, are provided. Owing to a laminate structure, if a crack occurs in one of the barrier films, the other barrier film(s) can prevent moisture or oxygen from penetrating into the organic light emitting layer. The stress relaxing film, which has a smaller stress than the barrier films, is interposed between the barrier films, making it possible to reduce stress of the entire sealing film. Therefore, a crack due to stress hardly occurs.Type: ApplicationFiled: August 7, 2014Publication date: November 27, 2014Inventors: Shunpei YAMAZAKI, Toru TAKAYAMA, Mai AKIBA
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Publication number: 20140346489Abstract: In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.Type: ApplicationFiled: August 7, 2014Publication date: November 27, 2014Inventors: Satoshi MURAKAMI, Mitsuhiro ICHIJO, Taketomi ASAMI
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Publication number: 20140346490Abstract: A display unit with which lowering of long-term reliability of a transistor is decreased is provided. The display unit includes a display section having a plurality of organic EL devices with light emitting color different from each other and a plurality of pixel circuits that are singly provided for every said organic EL device for every pixel. The pixel circuit has a first transistor for writing a video signal, a second transistor for driving the organic EL device based on the video signal written by the first transistor, and a retentive capacity, and out of the first transistor and the second transistor, a third transistor provided correspondingly to a second organic EL device adjacent to a first organic EL device is arranged farther from the first organic EL device than a first retentive capacity provided correspondingly to the second organic EL device out of the retentive capacity.Type: ApplicationFiled: August 7, 2014Publication date: November 27, 2014Inventors: Takayuki Taneda, Tetsuro Yamamoto, Katsuhide Uchino
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Publication number: 20140346491Abstract: A highly reliable light-emitting module including an organic EL element or a light-emitting device using a highly reliable light-emitting module including an organic EL element is provided. Alternatively, a method of manufacturing a highly reliable light-emitting module including an organic EL element, or a method of manufacturing a light-emitting device using a highly reliable light-emitting module including an organic EL element is provided. The light-emitting module has a structure in which a light-emitting element formed over a first substrate and a viscous material layer are sealed in a space between the first substrate and a second substrate which face each other, with a sealing material surrounding the light-emitting element. The viscous material layer is provided between the light-emitting element and the second substrate and includes a non-solid material and a drying agent which reacts with or adsorbs an impurity.Type: ApplicationFiled: August 11, 2014Publication date: November 27, 2014Inventors: Shunpei Yamazaki, Kaoru Hatano, Satoshi Seo, Akihiro Chida
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Publication number: 20140346492Abstract: The present invention is directed to a light emitting device structured so as to increase the amount of light which is taken out in a certain direction after emitted from a light emitting element, and a method of manufacturing this light emitting device. An upper end portion of an insulating material 19 that covers an end portion of a first electrode 18 is fowled to have a curved surface having a radius of curvature, a second electrode 23a is formed to have a slant face as going from its center portion toward its end portion along the curved surface. Light emitted from a light emitting layer comprising an organic material 20 that is formed on the second electrode 23a is reflected at the slant face of the second electrode 23a to increase the total amount of light taken out in the direction indicated by the arrow in FIG. 1A.Type: ApplicationFiled: August 11, 2014Publication date: November 27, 2014Inventors: Shunpei Yamazaki, Satoshi SEO, Hideaki KUWABARA
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Publication number: 20140346493Abstract: An in-cell OLED touch display panel structure includes an upper substrate, a lower substrate, an OLED layer configured between the upper and lower substrates, and a black matrix layer. The black matrix layer is disposed at one surface of the upper substrate that faces the OLED layer, and the black matrix layer is composed of a plurality of opaque conductor lines. The plurality of opaque conductor lines is divided into a first group of opaque conductor lines, a second group of opaque conductor lines, and a third group of opaque conductor lines. The second group of opaque conductor lines is formed with N mesh-like polygonal regions. The opaque conductor lines in any one of the polygonal regions are electrically connected together, while any two polygonal regions are not connected, so as to form a single-layered touch sensing pattern on the black matrix layer.Type: ApplicationFiled: August 12, 2014Publication date: November 27, 2014Inventor: Hsiang-Yu LEE
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Publication number: 20140346494Abstract: An optical unit on a light emitting unit includes a first polarizing plate on the light emitting unit, a second polarizing plate on the first polarizing plate, the second polarizing plate having a higher polarization degree than the first polarizing plate, and a plurality of phase shift plates between the first polarizing plate and the second polarizing plate.Type: ApplicationFiled: August 13, 2014Publication date: November 27, 2014Inventors: Woo-Suk JUNG, Soon-Ryong PARK
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Publication number: 20140346495Abstract: A method of fabricating a stable high mobility amorphous MOTFT includes a step of providing a substrate with a gate formed thereon and a gate dielectric layer positioned over the gate. A carrier transport structure is deposited by sputtering on the gate dielectric layer. The carrier transport structure includes a layer of amorphous high mobility metal oxide adjacent the gate dielectric and a relatively inert protective layer of material deposited on the layer of amorphous high mobility metal oxide both deposited without oxygen and in situ. The layer of amorphous metal oxide has a mobility above 40 cm2/Vs and a carrier concentration in a range of approximately 1018 cm?3 to approximately 5×1019 cm?3. Source/drain contacts are positioned on the protective layer and in electrical contact therewith.Type: ApplicationFiled: May 24, 2013Publication date: November 27, 2014Inventors: Chan- Long Shieh, Gang Yu, Fatt Foong, Juergen Musolf
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Publication number: 20140346496Abstract: An array substrate includes a thin film transistor on a substrate, a color pattern on the substrate, a light blocking pattern on the thin film transistor, an organic insulation layer covering the color pattern and the light blocking pattern, a pixel electrode on the organic insulation layer, and a low-reflective pattern on the pixel electrode. An opening portion is defined in the light blocking pattern and exposes the thin film transistor. A contact hole is defined in the organic insulation layer and corresponding to the opening portion. The pixel electrode is electrically connected to the thin film transistor through the contact hole. The low-reflective pattern corresponds to the opening portion.Type: ApplicationFiled: November 15, 2013Publication date: November 27, 2014Applicant: Samsung Electronics Co., Ltd.Inventors: Sung-In RO, Eun-Je JANG, Hyun-Wuk KIM, Ock-Soo SON
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Publication number: 20140346497Abstract: According to one embodiment, a thin-film transistor comprises an oxide semiconductor layer formed on a part of a substrate, a first gate insulator film of a silicon dioxide film formed on the oxide semiconductor layer and by the CVD method with a silane-based source gas, a second gate insulator film of a silicon dioxide film formed on the first gate insulator film by the CVD method with a TEOS source gas, and a gate electrode formed on the second gate insulator film.Type: ApplicationFiled: April 18, 2014Publication date: November 27, 2014Applicant: Japan Display Inc.Inventors: Masato HIRAMATSU, Masayoshi Fuchi, Arichika Ishida
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Publication number: 20140346498Abstract: A thin film transistor includes a gate electrode, a channel overlapped with the gate electrode, a source electrode contacting the channel, and a drain electrode spaced apart from the source electrode and contacting the channel. The channel includes indium-zinc-tin oxide sourced from a source including a single phase indium-zinc-tin oxide.Type: ApplicationFiled: April 27, 2014Publication date: November 27, 2014Applicants: Samsung Display Co., Ltd., Kobe Steel, LTD.Inventors: Byung-Du AHN, Gun-Hee KIM, Jun-Hyung LIM, Toshihiro KUGIMIYA, Hiroshi GOTO, Aya MIKI, Shinya MORITA
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Publication number: 20140346499Abstract: Provided is a thin-film transistor that includes: a substrate; a first barrier film formed on the substrate; a second barrier film formed in a selective region on the first barrier film, and having a barrier property against hydrogen; an oxide semiconductor layer including a first part formed on the second barrier film and a second part formed on the first barrier film, in which the first part functions as an active layer, and the second part has lower electrical resistance than the first part; a gate electrode formed on the first part of the oxide semiconductor layer with a gate insulating film therebetween; and a source electrode or drain electrode electrically connected to the second part of the oxide semiconductor layer. The first barrier film has a barrier property against an impurity from the substrate and a property of chemically reducing the oxide semiconductor layer.Type: ApplicationFiled: May 9, 2014Publication date: November 27, 2014Applicant: Sony CorporationInventor: Yuichi KATO
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Publication number: 20140346500Abstract: To provide a crystalline oxide semiconductor film. By collision of ions with a target including a crystalline In—Ga—Zn oxide, a flat-plate-like In—Ga—Zn oxide is separated. In the flat-plate-like In—Ga—Zn oxide, a first layer including a gallium atom, a zinc atom, and an oxygen atom, a second layer including a zinc atom and an oxygen atom, a third layer including an indium atom and an oxygen atom, and a fourth layer including a gallium atom, a zinc atom, and an oxygen atom are stacked in this order. After the flat-plate-like In—Ga—Zn oxide is deposited over a substrate while maintaining the crystallinity, the second layer is gasified and exhausted.Type: ApplicationFiled: May 15, 2014Publication date: November 27, 2014Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventor: Shunpei YAMAZAKI
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Publication number: 20140346501Abstract: An embodiment is a semiconductor device which includes a first oxide semiconductor layer over a substrate having an insulating surface and including a crystalline region formed by growth from a surface of the first oxide semiconductor layer toward an inside; a second oxide semiconductor layer over the first oxide semiconductor layer; a source electrode layer and a drain electrode layer which are in contact with the second oxide semiconductor layer; a gate insulating layer covering the second oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating layer and in a region overlapping with the second oxide semiconductor layer. The second oxide semiconductor layer is a layer including a crystal formed by growth from the crystalline region.Type: ApplicationFiled: July 14, 2014Publication date: November 27, 2014Inventor: Shunpei YAMAZAKI
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Publication number: 20140346502Abstract: A semiconductor device (100a) with a thin-film transistor (10a) includes: a gate electrode (62) formed on a substrate (60); a gate insulating layer (66) formed on the gate electrode; an oxide semiconductor layer (68) formed on the gate insulating layer; source and drain electrodes (70s, 70d) electrically connected to the oxide semiconductor layer; a protective layer (72) formed on the oxide semiconductor layer and the source and drain electrodes; an oxygen supplying layer (74) formed on the protective layer; an anti-diffusion layer (78) formed on the oxygen supplying layer; and a transparent electrode (81) formed on the anti-diffusion layer and made of an amorphous transparent oxide.Type: ApplicationFiled: December 3, 2012Publication date: November 27, 2014Applicant: Sharp Kabushiki KaishaInventor: Hiroshi Matsukizono
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Publication number: 20140346503Abstract: The present invention provides a thin film or laminate which ensures switching capabilities by phase transition of Mott transition at room temperature. An embodiment of the present invention provides a manganese oxide thin film 2 formed on a plane of a substrate 1 and having a composition represented by a composition formula RMnO3 (where R is at least one trivalent rare earth element selected from lanthanoids), wherein an atomic layer containing an element R and not containing Mn and an atomic layer containing Mn and not containing the element R are alternately stacked along a direction perpendicular to the plane of the substrate, and the manganese oxide thin film has two nonequivalent crystal axes along an in-plane direction of the plane of the substrate. An aspect of the present invention also provides an oxide laminate having the manganese oxide thin film 2 of the above aspect to which strongly-correlated oxide thin film 3, 31 or 32 are formed contiguously.Type: ApplicationFiled: December 7, 2012Publication date: November 27, 2014Applicant: FUJI ELECTRIC CO., LTD.Inventor: Yasushi Ogimoto
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Publication number: 20140346504Abstract: This active-matrix substrate (100A) includes: a substrate (11); a TFT (10A) which is supported on the substrate and which includes a semiconductor layer (14), a gate electrode (12g), a source electrode (16S) and a drain electrode (16D); first and second transparent conductive layers (22, 24), at least one of which is electrically connected to the drain electrode of the TFT and has tensile stress; and a stack of inorganic insulating layers (23S1) which has been formed between the first and second transparent conductive layers. The stack includes a first inorganic insulating layer (23a1) with tensile stress and second and third inorganic insulating layers (23b1, 23c1) which have been formed so as to sandwich the first inorganic insulating layer between them and which have compressive stress. The stack as a whole has tensile stress.Type: ApplicationFiled: December 18, 2012Publication date: November 27, 2014Applicant: Sharp Kabushiki KaishaInventor: Katsunori Misaki
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Publication number: 20140346505Abstract: A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.Type: ApplicationFiled: August 7, 2014Publication date: November 27, 2014Inventors: Yoshinobu ASAMI, Tamae TAKANO, Masayuki SAKAKURA, Ryoji NOMURA, Shunpei YAMAZAKI
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Publication number: 20140346506Abstract: A pixel having a transistor which controls a current value supplied to a load, a first storage capacitor, a second storage capacitor, and first to fourth switches is included. After the threshold voltage of the transistor is held in the second storage capacitor, a potential in accordance with a video signal is input to the pixel. Voltage obtained by adding a potential in which the potential in accordance with the video signal and the first storage capacitor are capacitively divided to the threshold voltage is held in the second storage capacitor in this manner, so that variation of a current value caused by variations in the threshold voltage of the transistor is suppressed. Thus, desired current can be supplied to the load such as a light-emitting element. In addition, a display device with little deviation from luminance specified by the video signal can be provided.Type: ApplicationFiled: August 8, 2014Publication date: November 27, 2014Inventors: Hajime Kimura, Tomoko Yamada
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Publication number: 20140346507Abstract: An object is to provide a transistor in which the state of an interface between an oxide semiconductor layer and an insulating film (gate insulating layer) in contact with the oxide semiconductor layer is favorable; and a method for manufacturing the transistor. In order to obtain the transistor, nitrogen is added to a region of the oxide semiconductor layer in the vicinity of the interface with the gate insulating layer. Specifically, a concentration gradient of nitrogen is formed in the oxide semiconductor layer, and a region containing much nitrogen is provided at the interface with the gate insulating layer. By the addition of nitrogen, a region with high crystallinity can be formed in the region of the oxide semiconductor layer in the vicinity of the interface with the gate insulating layer, so that a stable interface state can be obtained.Type: ApplicationFiled: August 11, 2014Publication date: November 27, 2014Inventor: Shunpei YAMAZAKI
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Publication number: 20140346508Abstract: Provided is a semiconductor device including a transistor with large on-state current even when it is miniaturized. The transistor includes a pair of first conductive films over an insulating surface; a semiconductor film over the pair of first conductive films; a pair of second conductive films, with one of the pair of second conductive films and the other of the pair of second conductive films being connected to one of the pair of first conductive films and the other of the pair of first conductive films, respectively; an insulating film over the semiconductor film; and a third conductive film provided in a position overlapping with the semiconductor film over the insulating film. Further, over the semiconductor film, the third conductive film is interposed between the pair of second conductive films and away from the pair of second conductive films.Type: ApplicationFiled: August 11, 2014Publication date: November 27, 2014Inventors: Shunpei YAMAZAKI, Atsuo ISOBE, Toshinari SASAKI
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Publication number: 20140346509Abstract: A first embodiment relates to a semiconductor component. The semiconductor component has a semiconductor body with a bottom side and a top side spaced distant from the bottom side in a vertical direction. In the vertical direction, the semiconductor body has a certain thickness. The semiconductor component further has a crack sensor configured to detect a crack in the semiconductor body. The crack sensor extends into the semiconductor body. A distance between the crack sensor and the bottom side is less than the thickness of the semiconductor body.Type: ApplicationFiled: May 22, 2013Publication date: November 27, 2014Inventors: Markus Zundel, Uwe Schmalzbauer, Rudolf Zelsacher
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Publication number: 20140346510Abstract: A device structure suitable for parallel test is disclosed, which includes a main body and an anti-crosstalk structure. The main body includes a first well formed in a substrate, the first well defining a boundary of the main body in the substrate. The anti-crosstalk structure is a second well formed in the substrate and surrounding the first well of the main body. The second well has a conductivity type opposite to a conductivity type of the first well and has a depth greater than a depth of the first well. The present invention is capable of preventing the interference between leakage currents generated in bases of the same conductivity type of different such device structures during a parallel test, thereby allowing the leakage currents to be correctly measured and improving the reliability of measurement result and the test efficiency.Type: ApplicationFiled: November 19, 2013Publication date: November 27, 2014Applicant: Shanghai Huali Microelectronics CorporationInventors: Binfeng Yin, Min Zhao, Ke Zhou
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Publication number: 20140346511Abstract: An array substrate, a manufacturing method, and a display device thereof are disclosed.Type: ApplicationFiled: December 23, 2012Publication date: November 27, 2014Applicant: Beijing BOE Optoelectronics Technology Co., Ltd.Inventors: Hao Wu, Yajuan Chen, Yanyan Yin, Lei Wang
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Publication number: 20140346512Abstract: In a semiconductor integrated circuit device, a target chip, a test chip, and an electronic device are incorporated in a package. A signal terminal of the target chip is a target terminal and to be subjected to a test. The test chip has a test mechanism for allowing the test to be performed through an external terminal exposed outside the package. In a product operation mode where the semiconductor integrated circuit device operates as a product, the electronic device is connected to the target terminal. The test chip includes a common wire connected to the test terminal, a first terminal connected to the target terminal, a first switch for opening and closing a connection between the common wire and the first terminal, a second terminal connected to the electronic device, and a second switch for opening and closing a connection between the first terminal and the second terminal.Type: ApplicationFiled: May 15, 2014Publication date: November 27, 2014Applicant: DENSO CORPORATIONInventor: Takatoshi NOMURA
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Publication number: 20140346513Abstract: An integrated circuit with probeable and routable interfaces is disclosed. The integrated circuit includes multiple micro-pillars that are attached to the surface of the integrated circuit, and multiple macro-pillars also attached to the surface of the integrated circuit. The micro-pillars provide an electrical interface to the integrated circuit during regular operation. The macro-pillars provide an electrical interface to the integrated circuit both during regular operation and during testing of the integrated circuit.Type: ApplicationFiled: May 20, 2014Publication date: November 27, 2014Applicant: eSilicon CorporationInventor: Javier DeLaCruz
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Publication number: 20140346514Abstract: A semiconductor device comprises: a semiconductor element including an electrode; a leading line electrically connected to the electrode, passing above the electrode, and led to a side thereof; and a current sensor sensing current flowing through the leading line. The current sensor includes a magneto-resistance element placed above the electrode and below the leading line. A resistance value of the magneto-resistance element varies linearly according to magnetic field generated by the current.Type: ApplicationFiled: June 16, 2014Publication date: November 27, 2014Applicant: Mitsubishi Electric CorporationInventors: Hajime Akiyama, Akira Okada
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Publication number: 20140346515Abstract: Detection accuracy of a semiconductor device for detecting various kinds of substances including biological matter such as DNA is to be increased. This semiconductor device includes: a channel region CH placed on a first surface of a silicon oxide film 110; source/drain regions placed on both sides of the channel region CH; a gate electrode G placed on the first surface at a distance from the channel region CH, the gate electrode G being located to face a side surface xz1 of the channel region CH; an insulating film Z located between the channel region CH and the gate electrode G; and a pore P extending parallel to the side surface xz1 of the channel region CH, the pore P being perpendicular to the first surface. A test object such as DNA 200 is introduced into the pore P, and field changes caused by the test object in an inversion layer 10 formed in the side surface xz1 of the channel region CH is detected as changes in the current flowing between the source/drain regions.Type: ApplicationFiled: November 19, 2012Publication date: November 27, 2014Inventors: Itaru Yanagi, Masahiko Ando, Toshiyuki Mine, Taro Osabe, Tomoyuki Ishii
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Publication number: 20140346516Abstract: A semiconductor memory device includes a semiconductor die and an input-output bump pad part. The semiconductor die includes a plurality of memory cell arrays. The input-output bump pad part is formed in a central region of the semiconductor die. The input-output bump pad part provides a plurality of channels for connecting each of the memory cell arrays independently to an external device. The semiconductor memory device may adopt the multi-channel interface, thereby having high performance with relatively low power consumption.Type: ApplicationFiled: August 4, 2014Publication date: November 27, 2014Inventors: Ho-Cheol LEE, Chi-Sung OH, Jin-Kuk KIM
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Publication number: 20140346517Abstract: A photo detector and a method for fabricating the same are provided. The photo detector includes a first substrate and a photo conversion element. The first substrate has a sensor element array for receiving a light with a spectrum in a specific wavelength range. The photo conversion element is disposed on the sensor element array, where the photo conversion element includes a photo conversion material layer and a doped photo conversion material column structure layer. A luminescent spectrum of the doped photo conversion material layer column structure layer is overlapped with the spectrum in a specific wavelength range, and a luminescent spectrum of the photo conversion material layer is non-overlapped with the spectrum in a specific wavelength range.Type: ApplicationFiled: May 22, 2014Publication date: November 27, 2014Applicant: Au Optronics CorporationInventors: Te-Ming Chen, Chin-Mao Lin
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Publication number: 20140346518Abstract: A magnetic memory includes a magnetic memory, including a ferromagnetic underlayer including a magnetic material, a non-magnetic intermediate layer disposed on the underlayer, a ferromagnetic data recording layer formed on the intermediate layer and having a perpendicular magnetic anisotropy, a reference layer connected to the data recording layer across a non-magnetic layer, and first and second magnetization fixed layers disposed in contact with a bottom face of the underlayer. The data recording layer includes a magnetization free region having a reversible magnetization and opposed to the reference layer, a first magnetization fixed region coupled to a first border of the magnetization free layer and having a magnetization fixed in a first direction, and a second magnetization fixed region coupled to a second border of the magnetization free layer and having a magnetization fixed in a second direction opposite to the first direction.Type: ApplicationFiled: August 8, 2014Publication date: November 27, 2014Inventors: Eiji Kariyada, Katsumi Suemitsu, Hironobu Tanigawa, Kaoru Mori, Tetsuhiro Suzuki, Kiyokazu Nagahara, Yasuaki Ozaki, Norikazu Ohshima
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Publication number: 20140346519Abstract: An active array substrate includes a flexible substrate, an inorganic barrier layer, and at least one active component. The inorganic barrier layer covers the flexible substrate. The inorganic barrier layer has a through hole therein. The through hole of the inorganic barrier layer exposes the flexible substrate. The active component is disposed on the inorganic barrier layer.Type: ApplicationFiled: March 4, 2014Publication date: November 27, 2014Applicant: AU Optronics CorporationInventors: Tsung-Ying KE, Pin-Fan WANG, Tsi-Hsuan HSU, Wei-Te LEE
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Publication number: 20140346520Abstract: A driver includes a dummy stage and one or more additional stages coupled to the dummy stage. The dummy stage includes a first transistor coupled between an input terminal and an output terminal. The first transistor includes two electrodes forming at least a first capacitor to store at least a portion of static electricity received through the input terminal. The one or more additional stages output gate signals, which may be received, for example, by a display device.Type: ApplicationFiled: March 27, 2014Publication date: November 27, 2014Applicant: Samsung Display Co., Ltd.Inventors: Jaewon KIM, Boyeong KIM, Soo-Hyun KIM, Kyung-ho PARK, HyungJun PARK, Dong-Hyun YOO, Ki Yeup LEE, Seongyoung LEE
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Publication number: 20140346521Abstract: A display device includes a circuit layer including: a plurality of transistors; a plurality of metal layers; and a plurality of wirings. The display device includes a display layer including first, second and third light emitting elements. The first light emitting element includes a first anode electrode and a first light emitting layer, a surface of the first anode electrode having a first surface contour structure; the second light emitting element includes a second anode electrode and a second light emitting layer, a surface of the second anode electrode having a second surface contour structure which is different from the first surface contour structure; and the third light emitting element includes a third anode electrode and a third light emitting layer, a surface of the third anode electrode having a third surface contour structure which is different from the second surface contour structure.Type: ApplicationFiled: August 7, 2014Publication date: November 27, 2014Inventor: Hiroshi Sagawa
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Publication number: 20140346522Abstract: An electronic package includes a leadframe and a plurality of pins. The electronic package also includes a first gallium nitride (GaN) transistor comprising a source, gate, and drain and a second GaN transistor comprising a source, gate, and drain. The source of the first GaN transistor is electrically connected to the leadframe and the drain of the second GaN transistor is electrically connected to the leadframe. The electronic package further includes a first GaN diode comprising an anode and cathode and a second GaN diode comprising an anode and cathode. The anode of the first GaN diode is electrically connected to the leadframe and the cathode of the second GaN diode is electrically connected to the leadframe.Type: ApplicationFiled: May 23, 2013Publication date: November 27, 2014Applicant: AVOGY, INC.Inventors: Donald R. Disney, Hemal N. Shah
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Publication number: 20140346523Abstract: An enhanced GaN transistor is provided. The structure comprises a substrate, a heterostructure, a p-element epitaxy growth layer, a drain ohmic contact and a source ohmic contact disposed on the heterostructure and on two sides of the p-element epitaxy growth layer, a gate structure disposed on the p-element epitaxy growth layer, and is separated from the drain ohmic contact and the source ohmic contact, a surface passivation layer covered the drain ohmic contact, source ohmic contact, and p-element epitaxy growth layer, and covered portion of the gate structure.Type: ApplicationFiled: October 10, 2013Publication date: November 27, 2014Applicant: National Chiao Tung UniversityInventors: Yi CHANG, Yueh-Chin LIN, Huan-Chung WANG
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Publication number: 20140346524Abstract: Techniques for manufacturing optical devices, such as light emitting diodes (LEDs) using a separation process of thick gallium and nitrogen containing substrate members, are described.Type: ApplicationFiled: February 14, 2014Publication date: November 27, 2014Applicant: SORAA, INC.Inventors: Max Batres, AURELIEN DAVID
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Publication number: 20140346525Abstract: A semiconductor device includes a first semiconductor layer formed of a nitride semiconductor on a substrate; a second semiconductor layer formed of a nitride semiconductor on the first semiconductor layer; a gate trench formed in the second semiconductor layer or in the second and first semiconductor layers; a gate electrode formed at the gate trench; and a source electrode and a drain electrode formed on the second semiconductor layer. The gate trench has terminal parts of a bottom of the gate trench formed shallower than a center part of the bottom. A part of a sidewall of the gate trench is formed of a surface including an a-plain surface. The center part of the bottom is a c-plain surface. The terminal parts of the bottom form a slope from the c-plain surface to the a-plain surface.Type: ApplicationFiled: April 9, 2014Publication date: November 27, 2014Applicant: FUJITSU LIMITEDInventors: Yuichi Minoura, NAOYA OKAMOTO
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Publication number: 20140346526Abstract: A semiconductor device includes a first semiconductor layer formed of a nitride semiconductor on a substrate; a second semiconductor layer formed of a nitride semiconductor on the first semiconductor layer; an insulating layer formed on the second semiconductor layer; a source electrode and a drain electrode formed on the second semiconductor layer; and a gate electrode formed on the insulating layer. The insulating layer is formed of a material including an oxide and is formed by laminating a first insulating layer and a second insulating layer in a positioning order of the first insulating layer followed by the second insulating layer from a side of the second semiconductor layer, and an amount of hydroxyl groups included in per unit volume of the first insulating layer is less than an amount of hydroxyl groups included in per unit volume of the second insulating layer.Type: ApplicationFiled: May 19, 2014Publication date: November 27, 2014Applicant: FUJITSU LIMITEDInventor: Masahito Kanamura
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Publication number: 20140346527Abstract: A III-nitride semiconductor device includes an active region for supporting current flow during forward-biased operation of the III-nitride semiconductor device. The active region includes a first III-nitride epitaxial material having a first conductivity type, and a second III-nitride epitaxial material having a second conductivity type. The III-nitride semiconductor device further includes an edge-termination region physically adjacent to the active region and including an implanted region comprising a portion of the first III-nitride epitaxial material.Type: ApplicationFiled: August 7, 2014Publication date: November 27, 2014Inventors: Isik C. Kizilyalli, Hui Nie, Andrew P. Edwards, Richard J. Brown, Donald R. Disney