Abstract: Use of Ca in metal matrix composites (MMC) allows for incorporation of small and large amounts of ceramic (e.g. rutile Ti02) into the metal (Al, or its alloys). Calcium remains principally out of the matrix and is part of a boundary layer system that has advantages for integrity of the MMC. Between 0.005 and 10 wt. % calcium (Ca) may be included, and more than 50 wt. % of rutile has been shown to be integrated. Rutile may therefore be used to reduce melt loss due to calcium from an aluminum or aluminum alloy melt.

Abstract: A new technology of intense double alloying and modification involves introduction, during the process of secondary treatment of steel, of nitrogen-containing substance in urea (NH2)2CO into a ladle with a steel melt, which at a temperature of the steel liquid phase of approximately 1650° C. dissociates in an explosive manner, releasing atomic nitrogen. Conversion or transformation of an explosive dissociation of urea into an intensive process of self-propagating synthesis of nitride nanophases is carried out using differentiated by the amount and time schemes of the input of urea into steel melt, wherein the basic parameters, depending on the type of steel, are the flow rate of urea per tonne of steel in the range of 0.4-1.8 kg/tonne and speed of its input into the melt in the range of 5.0-8.0 kg per minute.

Abstract: A cast iron comprising: C: 3.0 to 4.8 mass %, Si: 3.5 to 5.0 mass %, Mn: 0.5 to 2.0 mass %, Sn and/or Sb where Sn: 0.02 to 0.2 mass %, Sb: 0.01 to 0.2 mass %, Cu: 0.5 mass % or less and the balance: Fe and inevitable impurities.

Abstract: A roll outer layer material contains small-size carbides having a circle equivalent diameter of 3 to 30 ?m in a number of 500 to 2500 pieces/mm2 and large-size carbides having a circle equivalent diameter of 50 ?m or more in a number of 20 pieces/mm2 or less, preferably having a chemical composition containing, by mass %, C: 2.4% or more and 2.9% or less, Si: 0.2% or more and 1.0% or less, Mn: 0.2% or more and 1.0% or less, Cr: 4.0% or more and 7.5% or less, Mo: 4.0% or more and 6.5% or less, V: 5.3% or more and 7.0% or less, Nb: 0.5% or more and 3.0% or less, and the balance being Fe and inevitable impurities, in which the contents of Cr, Mo, and V satisfy the relationship 1.5?(Cr+Mo)/V?2.4.

Abstract: The invention relates to a method for producing an ultra high strength material with high elongation by work hardening an essentially nickel-free austenitic material and then subjecting the material to heat treatment in the temperature range between 200° C. and <1,100° C. within a period from 10 s to 10 minutes.

Abstract: A method of producing a forged steel part is disclosed to include providing a steel billet having a composition including 0.25-0.40 wt. % C, 1.50-3.00 wt. % Mn, 0.30-2.00 wt. % Si, 0.00-0.150 wt. % V, 0.02-0.06 wt. % Ti, 0.010-0.04 wt. % S, 0.0050-0.0150 wt. % N, 0.00-1.00 wt. % Cr, 0.00-0.30 wt. % Mo, 0.00-0.003 wt. % B, and a balance of Fe and incidental impurities. The method may further include heating the steel billet to an austenization temperature of approximately 1150 degrees C. to 1350 degrees C., hot forging the steel billet to form the steel part, and controlled air cooling the forged steel part after the hot forging. The method may still further include induction heating select portions of the forged steel part after the controlled air cooling to increase the hardness of the select portions of the forged steel part, followed by quenching and tempering before the final machining.

Abstract: A cold-rolled flat steel product for deep drawing applications is disclosed, composed of a steel which, in addition to Fe and unavoidable impurities (in % by weight) contains C: <0.1%, Al: 6.5-11%, REM: 0.02-0.2%, P: <0.1%, S: <0.03%, N: <0.1% and optionally one or more elements from the group of “Mn, Si, Nb, Ti, Mo, Cr, Zr, V, W, Co, Ni, B, Cu, Ca, N”, provided that Mn: <6%, Si: <1%, Nb: <0.3%, Ti: <0.3%, Zr: <1%, V: <1%, V: <1%, Mo: <1%, Cr: <3%, Co: <1%, Ni: <2%, B: <0.1%, Cu: <3%, Ca: <0.015%. For production of such a flat steel product, a steel of appropriate composition is cast to give a pre-product, which is then hot-rolled to hot strip at a hot rolling end temperature of 820-1000° C. The latter is subsequently wound at a winding temperature of up to 850° C., after winding annealed at an annealing temperature of >650-1200° C.

Abstract: An austenitic Fe—Ni—Cr alloy comprises C: 0.005˜0.03 mass %, Si: 0.17˜4.0 mass %, Mn: not more than 2.0 mass %, P: not more than 0.030 mass %, S: not more than 0.0015 mass %, Cr: 18˜28 mass %, Ni: 21.5˜32 mass %, Mo: 0.10˜2.8 mass %, Co: 0.05˜2.0 mass %, Cu: less than 0.25 mass %, N: not more than 0.018 mass %, Al: 0.10˜4.0 mass %, Ti: 0.10˜1.0 mass %, Zr: 0.01˜0.5 mass %, and the balance being Fe and inevitable impurities; wherein Cr, Mo, N and Cu satisfy PRE=Cr+3.3×Mo+16×N?20.0 and PREH=411-13.2×Cr-5.8×Mo+0.1×Mo2+1.2×Cu?145.0 and wherein Al, Ti, and Zr satisfy 0.5?Al+Ti+1.5×Zr?1.5, and has an excellent corrosion resistance in air or under a wet environment even at a surface state having an oxide film formed by an intermediate heat treatment.

Abstract: New methods for aging aluminum alloys having zinc and magnesium are disclosed. The methods may include first aging the aluminum alloy at a first temperature of from about 330° F. to 530° F. and for a first aging time of from 1 minute to 6 hours, and then second aging the aluminum alloy at a second temperature for a second aging time of at least 30 minutes, with the second temperature being lower than the first temperature.

Abstract: The present invention relates to a copper alloy material for continuous casting mold and a process for producing the same. In more detail, the present invention relates to a copper alloy material for continuous casting mold, which consists of 0.05 wt % to 0.6 wt % of Cr, 0.01 wt % to 0.5 wt % of Ag, 0.005 wt % to 0.10 wt % of P, and a balance of Cu and unavoidable impurities; and a process for producing the same. The copper alloy material can further include less than 0.1 wt % of at least one of elements selected from a group consisting of Sn, Ti, Mg, Mn, Fe, Co, Al, Si, Mo, Zr and W.

Abstract: A method of non-ablatively laser patterning a multi-layer structure, the multi-layer structure including a substrate, a first layer disposed on the substrate, a second layer disposed on the first layer, and a third layer disposed on the second layer, the method including generating at least one laser pulse having laser parameters selected for non-ablatively changing the conductivity a selected portion of the third layer such that the selected portion becomes non-conductive, and directing the pulse to the multi-layer structure, wherein the conductivity of the first layer is not substantially changed by the pulse.

Abstract: Process for depositing a coating on a substrate having at least one cavity, comprising a step of mixing ground powders of an activating agent and a powder of the metal or of the alloy to be deposited on the substrate that were ground in step a) and a liquid so as to form a suspension, and a step of applying the suspension to the portion of the substrate to be coated.

Abstract: A method for the hot-dip coating of metal strip, in particular steel strip, in a metallic melting bath (3) is disclosed. In the method, the metal strip (1) to be coated is heated in a continuous furnace (2) and is introduced into the melting bath (3) through a snout (6) which is connected to the continuous furnace and which is immersed into the melting bath. To be able to satisfy the requirements placed on the coated strip (1) with regard to good deformability of the strip, as far as possible without cracking and peeling, and with regard to high anti-corrosion protection in a more effective and reliable manner, the disclosure proposes that, in the region delimited by the snout (6), a melt is used which is intentionally implemented differently, in terms of its chemical composition, than the chemical composition of the melt used in the melting bath (3).

Abstract: The invention relates to a device for thermally coating a surface, which has at least one housing, a cathode, which is designed as a consumable wire and at least one insulation element, wherein the housing has a non-detachable anti-adhesion layer.

Abstract: A component for a semiconductor processing chamber, the component including a substrate and a coating layer provided on a surface of the substrate, wherein the coating layer includes at least a first coating layer having a thermal emissivity of more than 0.98 to 1, having plasma resistance, and having a color value L in a range of 35 to 40 through a thickness direction thereof.

Abstract: The present disclosure relates to a method for plasma spraying. In one embodiment, a method includes controlling application of a filament embedded with powder particles to a plasma jet to generate a spray for coating a substrate. The method for plasma spraying can include controlling a plasma source to generate a plasma jet, such that the spray is formed by powder that is plasticized and output by the plasma jet to the substrate.

Abstract: A method for depositing a layer has a step of repeatedly performing a unit deposition process until the layer on a deposition target reaches a predetermined thickness. The unit deposition process includes (A) a step of placing the deposition target in a chamber, (B) a step of providing a non-oxidizing gas atmosphere or a vacuum atmosphere in the chamber, (C) depositing the layer on the deposition target by a cold spray process in the non-oxidizing gas atmosphere or the vacuum atmosphere, and (D) heat treating the deposition target after the depositing.

Abstract: Provided is a non-thermal refined soft-nitrided component including chemical composition of a steel material of a base metal containing: in mass %, C: 0.25 to 0.40%; Si: 0.10 to 0.35%; Mn: more than 2.0% to 2.8% or less; N: 0.0030 to 0.0250%; Cu: 0 to 1.0%; Mo: 0 to 0.3%; Ni: 0 to 0.5%; Ti: 0 to 0.020%; and a balance being Fe and impurities, the impurities including P: 0.08% or less; S: 0.10% or less; Al: 0.05% or less; and Cr: less than 0 20%, wherein a Vickers hardness at a position of 0.05 mm from the surface is 400 to 480, a Vickers hardness at a position of 1.0 mm from the surface is 200 or more, and a compound-layer depth at a stress concentrated region is 5 ?m or less. This non-thermal refined soft-nitrided component has an excellent bending straightening property and a high fatigue strength.

Abstract: The invention relates to a process for manufacturing a fixing device and a fixing device made by such a process. In particular, albeit not exclusively, the present invention relates a fixing device for application in fixing to concrete and like materials/substrates. The present invention therefore seeks to provide a fixing device for fixing to concrete, other like substrates which overcomes, or at least reduces some of the known problems of the prior art. The present invention also seeks to provide a fixing device which has enhanced corrosion resistance.

Abstract: A mask and a method of making the mask are disclosed. The mask includes a transition region including at least one first region having a first thickness, and an active region having another thickness, where the thickness of the active region is greater than the first thickness. The method of making the mask includes forming a plurality of patterns in a mask body, the patterns being formed in regions of the mask body corresponding with the active region and the transition region of the mask.

Abstract: The present invention has been made in view of the above-mentioned conventional technical problems. That is, an object of the present invention is to provide a gas barrier film excellent in barrier properties to oxygen and water vapor, preferably excellent in water vapor barrier properties after being left to stand in a humidified environment for a prescribed period.

Abstract: A plastic material piece including a substrate and a layer system applied upon the substrate. Directly on the substrate there is applied a first lacquer layer and subsequent to the lacquer layer a PVD layer system. The PVD layer system includes at least a first layer, a second layer and a third layer, whereby the first layer lies onto the first lacquer layer and is realized as an adherence layer, the second layer is realized as a stabilizing buffer layer, and the third layer is realized as a color defining layer.

Abstract: A system and method are provided for implementing a unique scheme by which to execute digital vapor phase patterning on metals, semiconductor substrates and other surfaces using a proposed variable data digital lithographic image forming architecture or technique. For certain substrate printing and manufacturing applications, including some printed electronics applications, the disclosed schemes implement techniques to digitally pattern metal layers with bulk material properties in a manner that is aligned with underlying layers on the fly. The disclosed digital printing process may pattern a release oil on a substrate in support of a metal deposition process. Changeable patterning is implemented with an ability to modify the alignment of the patterns on-the-fly. The release layer on a drum is laser patterned in order that the patterned release layer is transferred to the substrate, or the patterning of the release layer is accomplished directly on the substrate.

Abstract: Provided is a gas barrier film having superior gas barrier properties even when an organic gas barrier layer is provided to the surface of a plastic film. The gas barrier film is provided with an organic gas barrier layer containing a 1,3,5-triazine derivative at least at one surface of the plastic film, and is characterized by the 1,3,5-triazine derivative having as a substituent group a group containing sulfur at position 2, 4, or 6.

Abstract: Liquid precursor material of a coating substance and a solvent is provided in a reservoir (STEP1, STEP1?). In one variant the liquid precursor material is distilled (STEP2), the resultant liquid coating substance is vaporized (STEP3) and ejected through a vapour distribution nozzle arrangement (7) into a vacuum recipient (3) and onto substrate 5 to be coated. Alternatively, the liquid precursor material is directly vaporized (STEP3?). From the two-component vapour coating substance vapour is applied to substrate 5? to be coated. In this variant separation of solvent vapour and coating substance vapour is performed especially downstream vaporizing (STEP2?).

Abstract: A deposition method includes: introducing a gas into an airtight container containing electrically insulated raw material particles to generate an aerosol of the raw material particles; transferring the aerosol to a deposition chamber through a transfer tubing connected to the airtight container, the deposition chamber having a pressure maintained to be lower than that of the airtight container; injecting the aerosol from a nozzle mounted on a tip of the transfer tubing toward a target placed on the deposition chamber to cause the raw material particles to collide with the target, thereby causing the raw material particles to be positively charged; generating fine particles of the raw material particles by discharge of the charged raw material particles; and depositing the fine particles on a substrate placed on the deposition chamber.

Abstract: A multi-surface nanoparticle source includes a first end having an inlet configured to receive a flow of gas, a second end comprising an outlet through which nanoparticles exit the nanoparticle source, and two or more targets spaced apart and arranged about an axis extending from the first end to the second end. At least at least one of the targets is hollow, and the inlet is arranged to direct a flow of the gas through the hollow target, between at least two of the targets, or both. The gas impacts the targets, releasing atoms from the target and through the second end. The targets may be arranged lengthwise and concentrically about the axis. In some cases, a multi-surface nanoparticle source includes one or more magnets. Nanoparticles formed with a multi-surface nanoparticle deposition system may be homogeneous or have a core-shell structure.

Abstract: Provided is a sintered body comprising LiCoO2 used for a sputtering target. The area A of a surface of the sintered body that corresponds to a sputtering surface is 200-1500 cm2 and the relative density of the entire sintered body is 75% or higher. When B1 represents the area of a region in which the area ratio that is occupied by pores is 10% or higher in the surface that corresponds to a sputtering surface, the ratio of B1 to the area A is 50% or higher, and the area B2 of a region having a specific resistance of 1.0×102 ?-cm or smaller in the surface that corresponds to a sputtering surface occupies 25% or more of the area A.

Abstract: A method of forming a layer including disposing a first target and a second target to face each other with a first space therebetween, disposing a substrate to face the first space, generating plasma between the first target and the second target to perform sputtering on the substrate, disposing a capture net between the substrate and the the first space, and capturing anions and/or electrons that propagate toward the substrate from the first space.

Abstract: A magnetron sputtering device includes alternating current power supplies each connected to a first target and a second target in a pair, and a controller configured to control a phase difference between voltages output from the alternating current power supplies connected to the first targets and the second targets in the pairs adjacent to each other.

Abstract: A thin film of material on a substrate is formed in a continuous process of a physical vapor deposition system, in which material is deposited during a variable temperature growth stage having a first phase conducted below a temperature of about 500° C., and material is continuously deposited as the temperature changes for the second phase to above about 800° C.

Abstract: The disclosure relates to a method of making a microstructure on a substrate. A carbon nanotube structure is provided, wherein the carbon nanotube structure includes a number of carbon nanotubes arranged orderly and defines a number of first openings. A carbon nanotube composite is formed by applying a protective layer on the carbon nanotube structure, wherein the carbon nanotube composite structure defines a number of second openings. The carbon nanotube composite structure is placed on a surface of the substrate, wherein parts of the surface are exposed from the number of second openings. The surface of the substrate is dry etched by using the carbon nanotube composite structure as a mask.

Abstract: A method for forming a graphite-based structure comprises patterning a substrate thereby forming a plurality of elements, each respective element in the plurality of elements separated from an adjacent element by a corresponding trench in a plurality of trenches on the substrate. A first element in the plurality of elements has a first surface. A first trench in the plurality of trenches separates the first element from an adjacent element in the plurality of elements, and the first trench has a second surface. The first surface and the second surface are separated by a first side wall of the first element. The method further comprises creating a graphene initiating layer on the first side wall of the first element. The method also comprises generating graphene using the graphene initiating layer thereby forming the graphite-based structure.

Abstract: A method for fixation, onto a layer comprising an amorphous carbon film and provided on a base material, of a layer comprising a material condensation-reacting with hydroxyl groups on a surface of the amorphous carbon film, whereby, in the layer comprising an amorphous carbon film and provided on the base material, the amorphous carbon film can have a holding power which is strong enough to fix the layer comprising a material condensation-reacting with a hydroxyl group on the surface of the amorphous carbon film and can have uniformity of the holding power. Si and O are added into the layer comprising an amorphous carbon film to thereby improve adhesion durability and binding uniformity of the layer comprising a material condensation-reacting with a hydroxyl group.

Abstract: Implementations described herein protect a substrate support from corrosive cleaning gases used at high temperatures. In one embodiment, a substrate support has a shaft and a heater. The heater has a body. The body has a top surface, a side surface and a bottom surface. The top surface is configured to support a substrate during plasma processing of the substrate. A covering is provided for at least two of the top surface, side surface and bottom surface. The covering is selected to resist corrosion of the body at temperatures in excess of about 400 degrees Celsius.

Abstract: There is provided a cleaning method including cleaning an interior of a process chamber in which a substrate is processed, by supplying a cleaning gas into the process chamber and exhausting the cleaning gas from the process chamber via an exhaust pipe; and cooling the exhaust pipe by maintaining a state where distribution of the cleaning gas into the exhaust pipe is substantially stopped. Also, the act of cleaning the interior of the process chamber and the act of cooling the exhaust pipe are repeated alternately.

Abstract: Apparatus and methods of dimension control and monitoring between a processes fixture and a susceptor, and position determination of wafers are described.

Abstract: A substrate support device includes a plate portion including a heater plate that includes a heating element provided in the heater plate, and also including a first cooling plate provided on a bottom surface of the heater plate and having a first flow path, and a second cooling plate provided on a top surface of the heater plate and having a second flow path; and a shaft portion supporting the plate portion and including a line connected to the heating element to supply an electric current to the heating element, and a tube supplying a coolant to the first cooling plate and the second cooling plate, the line and the tube being provided inside the shaft portion.

Abstract: A chamber lid assembly includes: a central channel having an upper portion and a lower portion and extending along a central axis; a housing at least partially defining a first and a second annular channel, each fluidly coupled to the central channel; a first plurality of apertures disposed along a horizontal plane through the housing to provide a multi-aperture inlet between the first annular channel and the central channel; a second plurality of apertures disposed along a horizontal plane through the housing to provide a multi-aperture inlet between the second annular channel and the central channel, wherein the first and the second plurality of apertures are angled differently with respect to the central axis so as to induce opposing rotational flow of gases about the central axis; and a tapered bottom surface extending from the lower portion of the central channel to a peripheral portion of the chamber lid assembly.

Abstract: Method of performing atomic layer deposition. The method comprises supplying a precursor gas towards a substrate, using a deposition head including one or more gas supplies, including a precursor gas supply. The precursor gas reacts near a surface of the substrate for forming an atomic layer. The deposition head has an output face comprising the gas supplies, which at least partly faces the substrate surface during depositing the atomic layer. The output face has a substantially rounded shape defining a movement path of the substrate. The precursor-gas supply is moved relative to the substrate by rotating the deposition head while supplying the precursor gas, for depositing a stack of atomic layers while continuously moving in one direction. The surface of the substrate is kept contactless with the output face by means of a gas bearing.

Abstract: Gas distribution assemblies and susceptor assemblies made up of a plurality of pie-shaped segments which can be individually leveled, moved or changed. Processing chambers comprising the gas distribution assemblies, the susceptor assemblies and sensors with feedback circuits to adjust the gap between the susceptor and gas distribution assembly are also described. Methods of using the gas distribution assemblies, susceptor assemblies and processing chambers are also described.

Abstract: Embodiments of the disclosed subject matter provide a device including a nozzle, a source of material to be deposited on a substrate in fluid communication with the nozzle, a delivery gas source in fluid communication with the source of material to be deposited with the nozzle, an exhaust channel disposed adjacent to the nozzle, and a confinement gas source in fluid communication with the nozzle and the exhaust channel, and disposed adjacent to the exhaust channel.

Abstract: Embodiments disclosed herein generally include an apparatus for radical-based deposition of dielectric films. The apparatus includes a processing chamber, a radical source coupled to the processing chamber, a substrate support disposed in the processing chamber, and a dual-channel showerhead disposed between the radical source and the substrate support. The dual-channel showerhead includes a plurality of tubes and an internal volume surrounding the plurality of tubes. The plurality of tubes and the internal volume are surrounded by one or more annular channels embedded in the dual-channel showerhead. The dual-channel showerhead further includes a first inlet connected to the one or more channels and a second inlet connected to the internal volume. The processing chamber may be a PECVD chamber, and the apparatus is capable of performing a cyclic process (alternating radical based CVD and PECVD).

Abstract: A vertical heat treatment apparatus includes: a gas supply part that supplies a film forming gas into a reaction chamber; and gas distribution adjusting members arranged above and below a region in which target substrates are disposed. The gas distribution adjusting members include a first plate-shaped member with convex and concave portions and a second plate-shaped member with convex and concave portions, the first plate-shaped member and the second plate-shaped member being arranged above and below each other, and the first plate-shaped member and the second plate-shaped member being arranged above a bottom plate of a substrate holding and supporting part and below a ceiling plate of a substrate holding and supporting part. The first plate-shaped member has a first surface area and the second plate-shaped member has a second surface area different from the first surface area.

Abstract: Apparatus and methods for processing a semiconductor wafer so that the wafer remains in place during processing. The wafer is subjected to a pressure differential between the top surface and bottom surface so that sufficient force prevents the wafer from moving during processing.

Abstract: A method of forming a low temperature silicide film on a substrate includes supplying a source gas to a cluster formation chamber to form a gas cluster that is subsequently moved to an ionization-acceleration chamber to form a gas cluster ion beam (GCIB). The GCIB is injected into a processing chamber containing the substrate. A precursor gas is injected through an injection device located on a top portion of the processing chamber to form a silicide film on the substrate by bombarding the substrate with the GCIB in the presence of the precursor gas.

Abstract: Method and apparatus for treating a substrate prior to deposition using atmospheric plasma are disclosed. A substrate can be provided between a substrate support and a plasma distributor, where the plasma distributor includes one or more atmospheric plasma sources. The atmospheric plasma sources can generate plasma under atmospheric pressure, where the plasma can include radicals and ions of a process gas, such as a reducing gas species. The substrate can be exposed to the plasma under atmospheric pressure to treat the surface of the substrate, where atmospheric pressure can be between about 50 Torr and about 760 Torr. In some embodiments, substrate includes a metal seed layer having portions converted to oxide of a metal, where exposure to the plasma reduces the oxide of the metal and reflows the metal in the metal seed layer.

Abstract: Apparatus for use in a substrate processing chamber are provided herein. In some embodiments, a indexed jet injector for use in a process chamber may include a body having a substantially cylindrical central volume, a gas input port disposed on a first surface of the body, a gas distribution channel formed in the body fluidly coupled to the gas input port and to the cylindrical central volume, a gas distribution drum disposed within the cylindrical central volume and rotabably coupled to the body, the gas distribution drum having a plurality of jet channels formed through the gas distribution drum, and a plurality of indexer output ports formed on a second surface of the body, wherein each of the plurality of jet channels fluidly couple the gas input port to at least one of the plurality of indexer output ports at least once per 360° rotation of the gas distribution drum.

Abstract: There is provided with a method of manufacturing a resin article having a plating layer. A portion of a surface of a resin article is selectively irradiated with ultraviolet rays. The resin article irradiated with ultraviolet rays is treated using an alkaline solution. An electroless plating catalyst is applied to the surface of the resin article treated using the alkaline solution. A plating layer is selectively deposited on a portion of the surface of the resin article that is not irradiated with ultraviolet rays by submerging the resin article applied with the electroless plating catalyst in an electroless plating solution.

Abstract: The copper electroless baths are formaldehyde free and are environmentally friendly. The electroless copper baths include one or more sulfinate compounds as reducing agents to replace formaldehyde. The electroless baths are stable and deposit a bright copper on substrates.