Abstract: Provided is a method for producing a plated steel sheet with high Si content for hot stamping, which is capable of suppressing the generation of unplated portions, while maintaining high bonding strength in a welded part in cases where a galvanized steel sheet containing a large amount of Si, namely, 0.7% or more of Si is used for hot stamping applications. In this production method, a hot-rolled pickled steel sheet or cold-rolled steel sheet containing 0.10-0.5% by mass of C, 0.7-2.5% by mass of Si, 1.0-3% by mass of Mn, and 0.01-0.5% by mass of Al is annealed in a reducing atmosphere and then plated, thereby producing a galvanized steel sheet for hot stamping. This method for producing a galvanized steel sheet for hot stamping is characterized in that the annealing is carried out within the range of 500 to 700° C. for 30 to 270 seconds.

Abstract: A method of fabricating a part (1) comprising a metal substrate (Sub) at least partially covered in a coating layer (Rev). The method comprises: preparing (A) a surface of the substrate (Sub) to obtain a prepared surface of roughness Ra lying in the range 0.6 ?m to 1.6 ?m, and; forming (C) the coating layer (Rev) on the prepared surface of the substrate, this coating layer (Rev) being formed by spraying, using an HVOF type spraying method to spray a powder mixture containing grains (G) of metal carbide, the grains (G) having dimensions that are strictly less than 1 ?m and the thickness (Epmin) of the coating layer (Rev) as formed in this way being less than 50 ?m; then finishing at least one surface of said coating layer (Rev) by polishing (D) in such a manner as to ensure that its roughness Ra is less than 1.6 ?m.

Abstract: An apparatus for manufacturing a display device and a method of manufacturing a display device is disclosed. In one aspect, the apparatus includes a guider configured to guide a substrate on which a display portion is formed, a plasma sprayer configured to be spaced apart from the display portion and configured to spray plasma onto the substrate and a mask configured to be arranged over the substrate and cover the display portion. The mask includes a body portion configured to face the display portion and a protrusion portion formed at an end of the body portion and configured to extend towards the substrate.

Abstract: A workpiece made from a self passivating metal and having one or more surface regions defining a Beilby layer as a result of a previous metal shaping operation is activated for subsequent low temperature gas hardening by exposing the workpiece to the vapors produced by heating an oxygen-free nitrogen halide salt.

Abstract: A vanadium oxide thermo-sensitive film material with a high temperature coefficient of resistance (TCR) contains a rare earth element of Yttrium serving as a dopant in a preparation process. The vanadium oxide thermo-sensitive film material includes a substrate and a yttrium-doped vanadium oxide film layer. The yttrium-doped vanadium oxide film layer includes three elements of vanadium, oxygen and yttrium, wherein the atomic concentration of yttrium is at a range of 1%-8%, the atomic concentration of vanadium is at a range of 20-40% and the residue is oxygen. The method for preparing the vanadium oxide thermo-sensitive film material with high TCR includes a reactive magnetron sputtering method using a low-concentration yttrium-vanadium alloy target as a sputtering source or a reactive magnetron co-sputtering method using dual targets including a high-concentration yttrium-vanadium alloy target and a pure vanadium target as a co-sputtering source.

Abstract: The present disclosure relates to a coated cutting tool including a substrate and a coating disposed on the substrate, wherein the coating includes a layer of TixZryAl(1-x-y)N, where 0<x?0.3, 0.2?y?0.8 and 0.1?(1-x-y)?0.7. The disclosure further relates to a method of producing such a coated cutting tool, and to a cutting insert forming a coated cutting tool.

Abstract: A plasma processing apparatus includes a first electrode, a second electrode disposed to face the first electrode, a chamber, a first high-frequency power supply, a direct-current power supply, and a gas supply source. The plasma processing apparatus generates first plasma to form a film of a reaction product on the second electrode by causing the first high-frequency power supply to supply first high-frequency power to the second electrode and causing the gas supply source to supply a first gas into the chamber; and generates second plasma to sputter the film of the reaction product by causing the first high-frequency power supply to supply the first high-frequency power to the second electrode, causing the direct-current power supply to supply direct-current power to the second electrode, and causing the gas supply source to supply a second gas into the chamber.

Abstract: A film forming apparatus, for forming a metal oxide film on an object, includes a holding unit and a heating unit. The holding unit includes a first heater and holds the object in a processing chamber. A first heater power supply supplies power to the first heater. A target electrode is electrically connected to a metal target provided above the holding unit. A sputtering power supply is electrically connected to the target electrode. An introduction mechanism supplies an oxygen gas toward the holding unit. The heating unit includes a second heater for heating the object and a moving mechanism for moving the second heater between a region in a first space disposed above the holding unit and a region in a second space separated from the first space. A second heater power supply supplies power to the second heater.

Abstract: A method of depositing Ni—Cr and Si coatings onto a turbine component comprising supplying a Ni—Cr target and Si target with a dual-gun magnetron sputtering system; introducing inert gas and negatively biasing the magnet assembly; grounding or negatively biasing the turbine component to be coated; rotating the turbine component, wherein the turbine component has a surface; and forming a Ni—Cr and Si coating on the component surface.

Abstract: The present disclosure relates to a superhydrophobic coating material and a method for manufacturing the superhydrophobic coating material. The superhydrophobic coating material according to the present disclosure includes a substrate provided with a three-dimensional nano structure; and a coating layer comprising a rare earth metal oxide formed on the three-dimensional nano structure. The method for manufacturing the superhydrophobic coating material according to the present disclosure includes preparing a substrate provided with a three-dimensional nano structure; and forming a coating layer comprising a rare earth metal oxide on the three-dimensional nano structure by supplying a precursor including a rare earth metal and an oxidant one by one onto the substrate, and the temperature of the substrate is controlled in the forming step so that an atomic ratio of a carbon element in the coating layer is less than 1% to form the coating layer with superhydrophobic property.

Abstract: Disclosed are devices, materials, systems, and methods, including a device that includes one or more structural components, at least one of the one or more structural components comprising substantially HfO2—TiO2 material. Also disclosed is a hemispherical resonator that includes a hemisphere including one or more structural components with at least one of the one or more structural components comprising substantially HfO2—TiO2 material, a forcer electrode configured to apply an electrical force on the hemisphere to cause the hemisphere to oscillate, and one or more sensor electrodes disposed in proximity to the hemisphere and configured to sense an orientation of a vibration pattern of the hemispherical resonator gyroscope.

Abstract: The present invention relates to a method for depositing nanocrystalline diamond using a diamond vapor deposition facility which includes: a vacuum reactor including a reaction chamber connected to a vacuum source; a plurality of plasma sources arranged along a matrix that is at least two-dimensional in the reaction chamber; and a substrate holder arranged in the reactor, said method being characterized in that the deposition is carried out at a temperature of 100 to 500° C.

Abstract: Embodiments of the present disclosure provide an apparatus having a remote plasma clean source in which the remote plasma clean source delivers radicals from the remotely generated plasma to the chamber at a location disposed between a backing plate and a diffuser.

Abstract: A film of source precursor molecules injected onto a substrate are reacted with hydrogen radicals, such as those produced in a hydrogen plasma, prior to reaction with a reactant precursor. This replaces the functional groups of the reactant precursor (e.g., methyl groups in alkyl groups) with hydrogen, thus reducing the overall size of the source precursor molecule. An additional cycle of source precursor molecules are injected onto the substrate, some of which occupy portions of the substrate surface left unoccupied by the now absent methyl functional groups. This increases the density of source precursor molecules (i.e., reaction sites) on the substrate. The reactivity of the source precursor molecules exposed to hydrogen radicals (or an H2 plasma) is also increased.

Abstract: A vapor delivery system includes an ampoule to store liquid precursor and a heater to partially vaporize the liquid precursor. A first valve communicates with a push gas source and the ampoule. A second valve supplies vaporized precursor to a heated injection manifold. A valve manifold includes a first node in fluid communication with an outlet of the heated injection manifold, a third valve having an inlet in fluid communication with the first node and an outlet in fluid communication with vacuum, a fourth valve having an inlet in fluid communication with the first node and an outlet in fluid communication with a second node, a fifth valve having an outlet in fluid communication with the second node, and a sixth valve having an outlet in fluid communication with the second node. A gas distribution device is in fluid communication with the second node.

Abstract: Bis(alkylimido)-bis(alkylamido)tungsten compounds, their synthesis, and their use for the deposition of tungsten-containing films are disclosed.

Abstract: Methods of depositing a metal layer utilizing organometallic compounds. A substrate surface is exposed to a gaseous organometallic metal precursor and an organometallic metal reactant to form a metal layer (e.g., a copper layer) on the substrate.

Abstract: An azimuthal mixer component that may be plumbed in-line with a showerhead stem tube of a semiconductor processing apparatus is provided. The azimuthal mixer may include a main passage that is coaxial with the stem tube, and one or more plenums that partially or wholly encircle the main passage. Corresponding sets of radial passages may fluidically connect the main passage with each of the plenums.

Abstract: Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a substrate processing apparatus comprises a chamber lid assembly including a first heating member, a susceptor positioned proximal to the chamber lid assembly, wherein the susceptor includes a second heating member for heating the substrate, a process chamber accommodating at least the chamber lid assembly and the susceptor and a controller configured to control the first heating member so as to refrain the conduction of heat energy generated by the second heating member from the susceptor to the chamber lid assembly.

Abstract: A silver-plated structure formed on a surface of a metallic base material includes: a pretreatment layer formed by washing the surface of the base material with a pretreatment agent; a resin paint film layer formed on a surface of the pretreatment layer; and a silver plating layer formed on a surface of the resin paint film layer. The silver plating layer includes: a silver film formed by a silver mirror reaction; an undercoat film that causes the silver film to adhere to the surface of the resin paint film layer; and a topcoat film that protects a surface of the silver film.

Abstract: The invention relates to a mixture containing a gold thiolate, a rhodium(III) compound, and a solvent that contains at least one OH group, in which the mixture has a ratio V=(a)/(b)?2.2; (a) is the fraction of solvent and (b) is the gold fraction of the gold thiolate, each relative to the total weight of the mixture.

Abstract: Provided are methods for etching films comprising transition metals which help to minimize higher etch rates at the grain boundaries of polycrystalline materials. Certain methods pertain to amorphization of the polycrystalline material, other pertain to plasma treatments, and yet other pertain to the use of small doses of halide transfer agents in the etch process.

Abstract: A CMP method uses a slurry including a first metal oxide or semiconductor oxide particles (first oxide particles) in water. At least one particle feature is selected from (i) first oxide particles having a polydispersity >30%, (ii) a coating on first oxide particles including Group I or Group II ions, transition metal oxide, or organic material, (iii) first oxide particles mixed with fumed oxide particles, (iv) first oxide particles with average primary size >50 nm mixed with fumed oxide particles having average primary size <25 nm, and (v) first oxide particles with a per surface area per unit mass <100 m2/gm mixed with another oxide particle type having an average area per unit mass >150 m2/gm. A substrate having an alumina surface is placed into a CMP apparatus, and CMP is performed with a rotating polishing pad and the slurry to polish the alumina surface.

Abstract: A semiconductor photocatalyst includes first and second layers made of first and second materials, respectively. Band gaps of the first and second materials are equal to or smaller than 1.5 eV and 2.5 eV, respectively. A lower electric potential of a conduction band of the second material is disposed on a positive side from the first material. An upper electric potential of a valence band of the second material is disposed on a positive side from the first material and from an oxidation electric potential of water when the first and second layers are bonded to each other in the hetero junction manner. The lower electric potential of the conduction band of the first layer is disposed on a negative side from a reduction electric potential of hydrogen when the first and second layers are bonded to each other in the hetero junction manner.

Abstract: The invention relates to a method for the management of fluids required to operate a vehicle, remarkable in that it comprises an operation of the anodic oxidation of a solution of hydrogen peroxide (P) for the purpose of producing oxygen, water and hydrogen cations by subjecting said solution to an electric current produced by an electrical power source. The invention also relates to a device that makes it possible to implement the method. Applications: management of the fluids required to operate a vehicle in particular an aircraft.

Abstract: The present application provides a device for generating hydrogen gas having a plurality of discharge electrode pairs, at least a first oxidation element and a second oxidation element, and at least one electrolysis electrode pair. The at least one electrolysis electrode pair is configured to perform electrolysis by flowing an electric current through the water and using heat generated by the oxidation of the first and second oxidation elements.

Abstract: A combination air pressure system and a gas generator system adapted for mounting next to an intake manifold of a tubocharged diesel engine. The system includes a solution reservoir tank for supplying a fluid mixture to a gas generator. The gas generator includes a housing with a plurality concentric tubular electrodes consisting of both anode and cathode tubular electrodes with a series of interposed bipolar electrodes.

Abstract: A liquid treatment apparatus according to an aspect of the present disclosure comprises a reactor and a plasma generator. The reactor includes an inner wall, a first space, and a second space. Each of the first space and a second space is capable of containing a liquid. The liquid is suppressed to move between the first space and the second space. The inner wall allows ions or electrons to move between the first space and the second space. The plasma generator includes a first electrode at least partially located in the first space, a second electrode at least partially located in the second space, and a power supply that applies AC or pulse voltage between the first electrode and the second electrode. The plasma generator produces plasma in the liquid.

Abstract: The present invention relates to a hydrogen generating unit for producing hydrogen water, and more particularly, to a hydrogen generating unit which has a structure that is relatively small in volume and simple so as to be easily applied to a small capacity hydrogen water producing apparatus for home or business use, and particularly, in which when an upper electrode and a lower electrode are fastened, an upper cover and a lower cover, which have been used for the hydrogen generating unit in the related art devised by the applicant of the present invention, are not used, but instead, the upper electrode and the lower electrode may be positioned between a cap at the upper side and a housing at the lower side, and the upper electrode and the lower electrode may be assembled together when the cap and the housing are coupled to each other, thereby reducing the number of components used for the hydrogen generating unit, simplifying manufacturing processes, and achieving excellent assembly properties.

Abstract: The present invention concerns a method of retrofitting of a membrane electrolysis cell, wherein a rigid cathode is shaped by plastic deformation of the regions in correspondence of cathodic supports; a pre-shaped conductive elastic element having compressed regions in correspondence of said cathodic supports is overlaid onto said rigid cathode; a flexible planar cathode provided with a catalytic coating is overlaid onto said conductive elastic element. The invention also concerns a correspondingly retrofitted electrolysis cell.

Abstract: An electrodes/electrolyte assembly—MEA, electrochemical membrane reactor—is described and a method for the direct amination of hydrocarbons, namely for the direct amination of benzene to aniline, and a method for the preparation of said electrodes/electrolyte assembly. The presented Solution allows the increase of conversion of said amination to above 60%, even at low temperatures, i.e., between 200° C. and 450° C.; preferably between 300° C. and 400° C. The electrodes/electrolyte assembly for direct amination of hydrocarbons comprises: an anode (1), electrons and protons conductor, that includes a composite porous matrix, comprised by a ceramic fraction and a catalyst for said amination at temperatures lower than 450° C.; a porous cathode (3), electrons and protons conductor, and electrocatalyst; an electrolyte (2), protons or ions conductor and electrically insulating, located between the anode (1) and the cathode (3), made of a composite ceramic impermeable to reagents and products of said amination.

Abstract: The embodiments described herein pertain generally to an amalgam electrode, and a producing method of the amalgam electrode, and an electrochemical reduction method of carbon dioxide using the amalgam electrode.

Abstract: There are provided processes for preparing lithium hydroxide that comprise submitting an aqueous composition comprising a lithium compound to an electrolysis or an electrodialysis under conditions suitable for converting at least a portion of the lithium compound into lithium hydroxide. For example, the lithium compound can be lithium sulphate and the aqueous composition can be at least substantially maintained at a pH having a value of about 1 to about 4.

Abstract: A method for recovering platinum group metals from a catalytic structure, such as a fuel cell membrane electrode assembly, involving dissolution of the platinum group metal by treating the catalytic structure in an electrolytic cell with a suitable electrolyte containing a complexing agent and introducing an electric current into the electrolytic cell; and subsequently re-precipitating the platinum group metal by increasing the pH of the electrolyte system and adding a reducing agent.

Abstract: An electrochemical cell and methods of using the electrochemical cell are described that can be utilized for the recovery of metals from metal oxides. The cell includes a first electrode that includes a solid metal oxide, an electrolyte including an oxygen ion conductor, and a second electrode space apart from the electrolyte by an oxygen ion conducting membrane. Upon reduction of the metal oxide, solid metal is formed that replaces the metal oxide of the electrode and provides for simplified recovery of the metal from the metal oxide. The membrane protects the second electrode from corrosion and degradation from the electrolyte, increasing the life of the cell.

Abstract: A process to extract metal ions and potentially other hazardous species present in solution to levels low enough to make it suitable for use and/or to quantify the levels of these contaminants in the solution. The process involves the use of functionalized magnetic particles to bind with metal ions. The process occurs in a three-chambered cell and utilizes a magnet to agglomerate the magnetic particles bound with metal ions to an electrode, and by altering the pH of the solution within the cell using gases produced by a solid state electrolyzer or from the air, encourages the plating of the metal ions on the electrode and the pushing out of the metal-free solution out of the cell.

Abstract: A cluster of non-collapsed nanowires, a template to produce the same, methods to obtain the template and to obtain the cluster by using the template, and devices comprising the cluster are described. The cluster and the template both have an interconnected region and an interconnection-free region.

Abstract: The electroplating equipment disposes a hollow first ring between a first mold and a through hole of a workpiece, and a hollow second ring between a second mold and the through hole of the workpiece, such that the first ring and the second ring provide substantially equivalent channel as the openings of the through hole when the first mold and the second mold are set to hold tight the workpiece. The first ring and the second ring, along with an injection channel of the first mold and a recycling channel of the second mold and the through hole of the workpiece, form a seamless flow channel for an electroplating fluid to flow and be electroplated on the wall of the through hole.

Abstract: Formation of an authentication element by deposition of a metal layer with embedded particles on a metal substrate, wherein the embedded particles are configured to convert energy from one wavelength to another. The embedded particles may be upconverters, downconverters, or phosphorescent phosphors, which can be detected and measured with analytical equipment when deposited in the metal layer. A metal substrate may include coinage.

Abstract: There are provided a plating film having high durability and high reliability, a method of manufacturing the plating film, and a plated product using the plating film. The plating film according to the disclosure is formed with use of a solvent in which a metallic salt is dissolved and a compound having functionality is dissolved or colloidally dispersed, and the metal and the compound having the functionality are homogenously dispersed and joined.

Abstract: Electrolytic plating compositions and electrolytic plating processes for the co-deposition of silver or silver alloy with fluoropolymer nanoparticles are provided. The silver or silver alloy composite coating containing fluoropolymer nanoparticles has enhanced functional properties such as a reduced coefficient of friction. The electrolytic plating composition comprises: (a) a silver ion source comprising silver methane sulfonate (Ag-MSA); (b) a complexing agent comprising a compound comprising a nitrogen-containing heterocyclic ring; (c) a pre-mix dispersion comprising fluoropolymer nanoparticles particles having a mean particle size of from about 10 nm and about 500 nm and a surfactant; and (d) an auxiliary surfactant comprising a cationic fluorosurfactant, wherein the composition has a pH of from about 8 to about 14.

Abstract: Provided is a particle that includes a first porous region and a second porous region that differs from the first porous region. Also provided is a particle that has a wet etched porous region and that does have a nucleation layer associated with wet etching. Methods of making porous particles are also provided.

Abstract: The invention relates to a particularly energy efficient, two-step method and to a system for the continuous or semi-continuous production of crystalline calcium carbonate (precipitated calcium carbonate, PCC) by reacting calcium hydroxide with CO2, the calcium hydroxide being lime milk. In the first step of the germination, the CO2-source is exclusively flue gas having a CO2-content of between 4-25% <sb/><sb/>. In the second step, the complete conversion of the lime milk reacted in the first step to a maximum of 90%, preferably between 10-90%, is carried out exclusively using a rich gas which comprises 30-99% CO2, preferably using biogas.

Abstract: The present invention relates to an apparatus and method for purifying materials using a rapid directional solidification. Devices and methods shown provide control over a temperature gradient and cooling rate during directional solidification, which results in a material of higher purity. The apparatus and methods of the present invention can be used to make silicon material for use in solar applications such as solar cells.

Abstract: A method for producing a solar crucible includes providing a crucible base body of transparent or opaque fused silica having an inner wall, providing a dispersion containing amorphous SiO2 particles, applying a SiO2-containing slip layer to at least a part of the inner wall by using the dispersion, drying the slip layer to form a SiO2-containing grain layer and thermally densifying the SiO2-containing grain layer to form a diffusion barrier layer. The dispersion contains a dispersion liquid and amorphous SiO2 particles that form a coarse fraction and a fine fraction with SiO2 nanoparticles. The weight percentage of the SiO2 nanoparticles based on the solids content of the dispersion is in the range between 2 and 15% by weight. The SiO2-containing grain layer is thermally densified into the diffusion barrier layer through the heating up of the silicon in the crystal growing process.

Abstract: The present invention provides the device for detecting an island position of an ingot growing furnace, comprising a control means for detecting the position of an island by analyzing the image obtained by the photographing means, wherein the control means derives a plurality of singularities with respect to the temperature or brightness from the image, derives a plurality of connection lines respectively forming straight lines by the mutual connection of a series of the singularities, considers an area in which the most intersections are generated as an island among areas in which the plurality of connection lines intersect each other, and determines whether the island is positioned in a seed contact area in which the seed is set to be lowered.

Abstract: Provided is a method for growing a ?-Ga2O3-based single crystal, whereby it becomes possible to grow a ?-Ga2O3-based single crystal having a small variation in crystal structure and also having a high quality in the direction of a b axis. In one embodiment, a method for growing a ?-Ga2O3-based single crystal includes growing a plate-shaped Sn doped ?-Ga2O3-based single crystal in the direction of the b axis using a seed crystal.

Abstract: A method for producing silicon carbide substrates fit for epitaxial growth in a standard epitaxial chamber normally used for silicon wafers processing. Strict limitations are placed on any substrate that is to be processed in a chamber normally used for silicon substrates, so as to avoid contamination of the silicon wafers. To take full advantage of standard silicon processing equipment, the SiC substrates are of diameter of at least 150 mm. For proper growth of the SiC boule, the growth crucible is made to have interior volume that is six to twelve times the final growth volume of the boule. Also, the interior volume of the crucible is made to have height to width ratio of 0.8 to 4.0. Strict limits are placed on contamination, particles, and defects in each substrate.

Abstract: A method for producing a single crystal includes a step of placing a source material powder and a seed crystal within a crucible, and a step of growing a single crystal on the seed crystal. The crucible includes a peripheral wall part and a bottom part and a lid part that are connected to the peripheral wall part to close the openings of the peripheral wall part, the lid part having a holder that holds the seed crystal. The bottom part has a connection region connected to the peripheral wall part and a thick region that is thicker than the connection region and that surrounds a central axis passing through a center of gravity of orthogonal projection of the bottom part, the orthogonal projection being formed on a plane perpendicular to a growth direction of the single crystal, the central axis extending in the growth direction of the single crystal.

Abstract: A vapor phase growth apparatus according to an embodiment includes n reaction chambers, a main gas supply passage supplying a process gas to the n reaction chambers, a main mass flow controller arranged in the main gas supply passage to control a flow rate of the process gas flowing in the main gas supply passage, (n?1) first sub gas supply passages being branches of the main gas supply passage to supply divided process gases to the (n?1) reaction chambers among the n reaction chambers, (n?1) first sub mass flow controllers arranged in the first sub gas supply passages to control flow rates of the process gases flowing in the first sub gas supply passages, and one second sub gas supply passage being a branch of the main gas supply passage to supply a remainder of the process gas to the one reaction chamber other than the (n?1) reaction chambers.