Abstract: In order to ensure that metal is homogeneously vaporized, in particular in a vacuum-strip vaporizer plant, a vaporization unit (2) is provided which has an inner cavity (6) which is defined by a circumferential web (10) to which an outer cavity (8) is connected.

Abstract: A hard material layer system with a multilayer structure, comprising alternating layers A and B, with A layers having the composition MeApAOANmA in atomic percent and B layers having the composition MeBpBOnBNmB in atomic percent, where the thermal conductivity of the A layers is greater than the thermal conductivity of the B layers. MeA and MeB each comprise at least one metal of the group Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, and Al, pA indicates the atomic percentage of MeA and pB indicates the atomic percentage of MeB and the following is true: PA=PB, nA indicates the oxygen concentration in the A layers in atomic percent and nB indicates the oxygen concentration in the B layers in atomic percent and the following is true: nA<nB, and mA indicates the nitrogen concentration in the A layers in atomic percent and mB indicates the nitrogen concentration in the B layers in atomic percent and the following is true: pA/(nA+mA)=pB/(nB+mB).

Abstract: A method of forming a layer, the method including providing a substrate having at least one surface adapted for deposition thereon; and directing a particle beam towards the surface of the substrate, the particle beam including small molecule molecular species, wherein the small molecule molecular species break apart upon interaction with atoms at the substrate into atomic components, each of the atomic components having implant energies from about 20 eV to about 100 eV to form a layer.

Abstract: The present invention relates to processes for obtaining metal oxides by irradiation of low energy laser pulses of metal layers, wherein said metals can be formed as simple metals, alloys, or multilayers. The present invention performs the oxidation of a thin metal film deposited on a substrate; e.g., glass (SiO2) or silicon (Si) by a laser-irradiation time of a few nanoseconds to femtoseconds at high repetition rate, time necessary to achieve a stoichiometry and a well-defined microscopic structure. Through the processes of the invention, it is possible to obtain complex structures and metal oxides at room temperature in a very short time and with very low energy consumption.

Abstract: A high-temperature polymeric-matrix composite (HTPMC) structure and a method for protecting an HTPMC from exposure to high temperatures in the presence of air, and prevent thermo-oxidative degradation. A thin, lightweight layer of a carbon-based barrier is applied onto a surface of the HTPMC structure. The carbon-based barrier coating is composed of graphene, amorphous carbon, or a mixture comprising a combination of graphene and amorphous carbon, and has coefficient of thermal expansion that is less than 10 times the coefficient of thermal expansion of the HTPMC structure. The carbon-based barrier may be coated with an erosion-barrier.

Abstract: A thin film deposition apparatus, including a plurality of linear nozzle parts separated from each other; and an exhaust plate to which is attached the plurality of linear nozzle parts, each linear nozzle part including a linear body member; a pair of first reaction gas pipes in the linear body member and inflowing a first reaction gas; a second reaction gas pipe between the pair of first reaction gas pipes and inflowing a second reaction gas; and a pair of control gas pipes between each of the first reaction gas pipes and the second reaction gas pipe and inflowing a control gas controlling a flow of the second reaction gas.

Abstract: A nozzle for supplying a fluid includes a tubular part including a tubular passage thereinside and a fluid discharge surface having a plurality of fluid discharge holes formed therein along a lengthwise direction of the tubular passage. A partition plate is provided in the tubular passage and extends along the lengthwise direction so as to partition the tubular passage into a first area including the fluid discharge surface and a second area without the fluid discharge surface. The partition plate has distribution holes whose number is less than a number of the plurality of fluid discharge holes in the lengthwise direction. A fluid introduction passage is in communication with the second area.

Abstract: A film forming apparatus of forming a film by supplying a process gas onto a substrate includes a rotation table having a loading region and is configured to revolve the substrate loaded on the loading region; a process gas supply mechanism configured to supply the process gas to a gas supply region to perform film formation on the substrate repeatedly passing through the gas supply region a plurality of times by revolution of the substrate; a first gear disposed on the other surface side of the rotation table and rotated in a rotation direction of the rotation table; a second gear configured with planetary gears engaging with the first gear, disposed to be revolved together with the loading region, and configured to rotate the loading region so as to allow the substrate to be rotated.

Abstract: Various embodiments herein relate to methods and apparatus for preparing a low-k dielectric material on a semiconductor substrate. The dielectric material may include porogens distributed throughout a structural matrix. A reactive ultraviolet thermal processing operation is performed to promote removal of the porogens from the dielectric material. By flowing a weak oxidizer such as carbon dioxide into the reaction chamber during UV exposure, the rate at which the porogens are removed can be enhanced in a controllable manner.

Abstract: Embodiments described herein generally relate to apparatus and methods for reducing hydrogen content of a film. Apparatus may include a chamber body, a support member coupled to a lift mechanism, and a source of hydrogen radicals. The chamber may have a radical conduit coupled with the source of hydrogen radicals at a first end and coupled with the chamber body at a second end. The chamber may have a dual-channel showerhead coupled with a lid rim. The dual-channel showerhead may be disposed between the radical source and the support member. The showerhead may face the support member. Methods may include forming a first film having a hydrogen content of about 1% to about 50% on a substrate in a chamber, and exposing the first film to hydrogen radicals to form a second film having reduced hydrogen content.

Abstract: A substrate processing apparatus includes: a mounting table configured to place a substrate thereon to be rotatable around an axis; an antenna provided in a first region; and a reaction gas supply section configured to supply a reaction gas to the first region. The reaction gas supply section includes an inside injection port and an outside injection port. The inside injection port is provided at a position closer to the axis than an antenna region when viewed in the axis direction, and configured to inject the reaction gas in a direction getting away from the axis. The outside injection port is provided at a position farther from the axis than the antenna region when viewed in the axis direction, and configured to inject the reaction gas in a direction approaching the axis at a flow rate controlled independently of that of the reaction gas injected from the inside injection port.

Abstract: An apparatus and method for forming a substrate web track with a repeating pattern into a reaction space of a deposition reactor by moving a first set of support rolls in relation to a second set of support rolls.

Abstract: Provided is a porous metal body containing at least nickel, tin, and chromium. An example of a method of producing such a porous metal body is a method including a conductive-coating-layer formation step of forming a conductive coating layer containing chromium on a surface of a porous base formed of a resin material; a metal-layer formation step of forming a nickel layer and a tin layer in any order on a surface of the conductive coating layer; a removal step of removing the porous base; and a diffusion step of, by a heat treatment, causing interdiffusion of metal atoms between the nickel layer and the tin layer and diffusing chromium contained in the conductive coating layer into the nickel layer and the tin layer.

Abstract: A method of applying a coating to a tubular by covering a portion of the outer surface of the tubular with a wrapping material, coating the tubular, and removing the wrapping material.

Abstract: A method for selectively depositing a platinum layer on a substrate includes providing an electroless deposition solution including a platinum precursor and at least one of water and/or a pH balancing solution. A substrate including a patterned metal layer and one or more dielectric layers is immersed in the electroless deposition solution for a first predetermined period. The platinum layer is selectively deposited on the patterned metal layer but not on the one or more dielectric layers. The substrate is removed from the electroless deposition solution after the first predetermined period.

Abstract: The present invention provides a metal sheet including a steel substrate coated on at least one face with a coating including from 0.1 to 20% by weight of magnesium, optionally from 0.1 to 20% by weight of aluminum, the balance being zinc, potential impurities linked to the method and optionally one or more additional elements selected from among Si, Sb, Pb, Ti, Ca, Mn, Sn, La, Ce, Cr, Ni, Zr and Bi, the content by weight of each additional element being less than 0.3%. The coating itself is covered by a layer, based on zinc hydroxychloride, having a chlorine coating weight of at least 1 mg/m2. The layer does not include hydrozincite or mixed hydroxycarbonates of zinc and aluminum or water-soluble compounds of sodium or potassium. The present invention also provides a method to obtain the metal sheet.

Abstract: A method for applying a coating to a substrate surface is provided. The method involves cold spraying a coating material against the surface of the substrate at a first velocity. The first velocity is lower in magnitude than a critical velocity. The method also involves cold spraying the coating material against the surface of the substrate at a second velocity. The second velocity is greater in magnitude than the critical velocity. The critical velocity is a threshold velocity below which the coating material is substantially deflected by the surface of the substrate and above which the coating material substantially adheres to the surface of the substrate.

Abstract: A method of forming a fine pattern includes providing a first metal layer on a base substrate, providing a first passivation layer on the first metal layer, providing a mask pattern on the first passivation layer, providing a partitioning wall pattern having a reverse taper shape by etching the first passivation layer, coating a composition having a block copolymer between the partitioning wall patterns adjacent each other, providing a self-aligned pattern by heating the composition, and providing a metal pattern by etching the first metal layer using the self-aligned pattern as a mask.

Abstract: A plasma processing method is provided for reducing dimensions of a film to be etched from patterned dimensions, and is capable of reducing dimensions without causing deformation or collapse of the film to be etched. A plasma processing method for trimming a tantalum film by plasma etching using a resist, an antireflective film disposed under the resist, and a mask film disposed under the antireflective film, includes the steps of trimming the antireflective film and the mask film by plasma etching with the resist as a mask; removing the resist and the antireflective film subjected to the trimming, by plasma; and trimming the tantalum film by plasma etching with a mask film obtained after the resist and the antireflective film subjected to the trimming are removed by plasma, as a mask.

Abstract: The present invention proposed manufacturing device of coating layers with good conductivity and corrosion resistance at high productivity comprising etching the oxide layer on the stainless steel substrate by plasma etching to activate the surface and prevent from decreasing it's conductivity, coating metal nitrides like CrN or TiN in nano size thickness on the etched surface and coating carbon layer at nano size thickness on top of it. According to the present invention, it is possible to produce manufacture fuel cell bipolar plate, electrode material and stainless steel with reinforced conductivity and corrosion resistance in mass.

Abstract: A gasket assembly for sealing between mating flange faces of a flanged connection with a central bore includes a seal member. The seal member is ring shaped and has a seal member profile on an inner diameter. A galvanic anode is a ring shaped member with an outer diameter that is in engagement with the seal member profile, and an inner diameter that is at least as large as a diameter of the central bore.

Abstract: A marine cathodic protection system configured to protect a metal structure exposed to seawater from corrosion. The system includes a first anode provided on or adjacent the protected metal structure at a first position. The first anode is exposed to seawater, is electrically insulated from the protected metal structure, and is formed of a metal having a greater negative potential than the protected metal. The system further includes a second anode provided on or adjacent the protected metal structure at a second position. The second anode is electrically connected to the first anode. The first position is preferably substantially submerged in said seawater such that the protected metal and the first anode cooperate to define a seawater battery configured to apply an electrical current to the second anode, the second anode thus being an impressed current anode.

Abstract: Disclosed are composite compositions, comprising a conductive matrix and an electrochemically active polymer, which are useful as heterogeneous catalysts or charge-storage materials. Suitable electrochemically active polymers include redox polymers, such as polyvinylferrocene, and conducting polymers, such as polypyrrole, and interpenetrating networks containing both redox polymers and conducting polymers.

Abstract: Hybrid thermochemical water splitting systems are disclosed that thermally reduces metal oxides particles to displace some but not all of the electrical requirements in a water splitting electrolytic cell. In these hybrid systems, the thermal reduction temperature is significantly reduced compared to two-step metal-oxide thermochemical cycles in which only thermal energy is required to produce hydrogen from water. Also, unlike conventional higher temperature systems where the reduction step must be carried out under reduced oxygen pressure, the reduction step in the proposed hybrid systems can be carried out in air, allowing for thermal input by a solar power tower with a windowless, cavity receiver.

Abstract: The present disclosure relates to an ammonia synthesis apparatus, and more particularly, to an electrochemical ammonia synthesis apparatus using an aqueous solution or a molten liquid of an alkali metal as an electrolyte. According to one or more embodiments, when an aqueous solution or a molten liquid of an alkali metal is used as an electrolyte in an ammonia synthesis apparatus, compositions, sizes, and shapes of an electrode and an electrolyte may be easily controlled, and thus a yield of ammonia synthesis may improve.

Abstract: Provided is an electrode assembly for electrolytic processing in an electrolysis cell comprising an electrode blade comprising a metallic hanger bar portion, a first lug for supporting the metallic hanger bar portion on a first power supply bar, an insulating piece connecting the metallic hanger bar portion to the first lug. The electrode assembly also comprises an electrical switch unit controlling electrical current supply between the first lug and the metallic hanger bar based on a control signal transmitted to a terminal of the electrical switch unit, a control unit configured to transmit the control signal to the terminal of the electrical switch unit, and a power storage unit configured to supply power to the control unit, the power storage unit being charged from the first lug and the hanger bar when the electrical switch unit switches off electrical current supply between the first lug and the metallic hanger bar.

Abstract: A method for manufacturing a chromium metal-chromium oxide coated substrate by electrolytically depositing the chromium metal-chromium oxide coating on an electrically conductive substrate from an electrolyte solution that includes a trivalent chromium compound and a chelating agent, wherein the electrolyte solution is free of chloride ions and of a boric acid buffering agent, the electrically conductive substrate acts as a cathode and an anode including a catalytic coating of iridium oxide or a mixed metal oxide is chosen for reducing or eliminating the oxidation of Cr(III)-ions to Cr(VI)-ions.

Abstract: Provided are a method for an anodizing treatment on an aluminum-based material and a structure of an internal combustion engine which are provided with both high heat insulation properties and a high corrosion resistance, a high durability and a high impact resistance, and high water-repellent and oil-repellent functions. This method comprises the steps of: forming a second anodic oxide coating 2b by application of AC-DC superimposition electrolysis to an aluminum-based material 1; and, after the step, forming a first anodic oxide coating 2a by application of direct-current electrolysis to the aluminum-based material 1, wherein the second anodic oxide coating 2b is formed on the first anodic oxide coating 2a.

Abstract: Provided is a method for fabrication of an anisotropic conductive member, the method including a residual stress relaxation step of obtaining an anisotropic conductive member that has been subjected to a treatment for relaxing residual stress, after fabricating an anisotropic conductive member having plural conductive paths, in which plural micropores of an insulating matrix formed from an anodic oxide film are filled with a conductive member.

Abstract: A plating device includes a pl,ting bath containing therein a plating solution, a substrate holder for detachably holding a substrate, an anode disposed opposite to the substrate held by the substrate holder, a rail part stretched across an upper portion of the plating bath in parallel to the substrate holder, and a paddle suspended by the rail part and capable of reciprocating along the rail part. The paddle is vertically provided with a vane part rotatable round or pivotable on an axis part. The plating device can increase flow rate of a plating solution without installing a circulating pump outside a plating bath, and further can achieve same flow rate of the plating solution from a bottom of the plating bath to a level of the solution, enabling plating that forms a plating film having a uniform thickness on an entire region of a substrate and exhibits a high deposition rate.

Abstract: Provided are methods for forming a mixed metal oxide epitaxial film (e.g., ScAlMgO4) comprising growing an amorphous layer of a mixed metal oxide on a substrate (e.g., crystalline sapphire) via atomic layer deposition and annealing the amorphous layer of the mixed metal oxide at an elevated temperature for a period of time sufficient to induce epitaxial solid-state re-growth of the amorphous layer of the mixed metal oxide, thereby forming the mixed metal oxide epitaxial film. The method may further comprise growing a layer of a semiconductor (e.g., GaN) on the mixed metal oxide epitaxial film.

Abstract: Low-temperature organometallic nucleation and crystallization-based synthesis methods for the fabrication of semiconductor and metal colloidal nanocrystals with narrow size distributions and tunable, size- and shape-dependent electronic and optical properties. Methods include (1) forming a reaction mixture in a reaction vessel under an inert atmosphere that includes at least one solvent, a cationic precursor, an anionic precursor, and at least a first surface stabilizing ligand while stirring at a temperature in a range from about 50° C. to about 130° C. and (2) growing nanocrystals in the reaction mixture for a period of time while maintaining the temperature, the stirring, and the inert-gas atmosphere.

Abstract: A melt surface flow field measurement method that captures flow rates at multiple tracking points and their mapping on melt surface for artificial crystal growth systems includes the following steps: (A) capture two consecutive images of the melt surface at a time interval of ?t; (B) define the significant regions in the first image as a plurality of first grid regions, then calculate centroid coordinates of the first grid regions; (C) define the regions in the second image corresponding to the significant regions in the first image as a plurality of second grid regions, then calculate centroid coordinates of the second grid regions; (D) lay the second set of centroid coordinates over the first grid regions, and calculate the distances between corresponding centroid coordinates to determine the displacement of the identified significant regions; and (E) divide the displacements by the time interval ?t to determine the flow rate and direction of each identified significant region on melt surface at their centr

Abstract: A device for manufacturing a silicon carbide single crystal is prepared. The device includes a first resistive heater, a heat insulator, and a chamber. The heat insulator is provided with a first opening in a position facing the first resistive heater. The chamber is provided with a second opening in communication with the first opening. The first resistive heater has a first slit extending from an upper end surface toward a lower end surface of the first resistive heater and a second slit extending from the lower end surface toward the upper end surface, the first and second slits being alternately arranged along a circumferential direction, and the first resistive heater is provided with a third opening penetrating the first resistive heater and being in communication with the first and second openings.

Abstract: A method of manufacturing a silicon carbide single-crystal substrate includes the following steps. A seed crystal having a main surface and being made of silicon carbide, and a silicon carbide source material are prepared. A silicon carbide single crystal is grown on the main surface by sublimating the silicon carbide source material while maintaining a temperature gradient between any two points in the silicon carbide source material at 30° C./cm or less. The main surface of the seed crystal is a {0001} plane or a plane having an off angle of 10° or less relative to the {0001} plane, and the main surface has a screw dislocation density of 20/cm2 or more. Thus, a silicon carbide single-crystal substrate capable of achieving improved crystal quality and a method of manufacturing the same are provided.

Abstract: A method of manufacturing a silicon carbide single crystal includes steps of preparing a crucible, a source material disposed toward a bottom surface in the crucible, a seed crystal disposed to face the source material toward a top surface in the crucible, a resistive heater, and a heat insulator configured to be able to accommodate the crucible therein, measuring a mass of at least a portion of the heat insulator, comparing a measured value of the mass obtained in the measuring step with a threshold value, and growing a silicon carbide single crystal on the seed crystal by sublimation of the source material by heating the crucible placed in the heat insulator with the resistive heater. When the measured value of the mass is lower than the threshold value in the comparing step, the step of growing a silicon carbide single crystal is performed at least one or more times.

Abstract: A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.

Abstract: A substrate holder having a base plate where a plurality of protruding poles is arranged, said poles spaced apart from one another by intermediate spaces. Alternatively or in addition, a plasma reactor for depositing diamond from the gas phase may be provided, the plasma reactor comprising such a substrate holder. A method for depositing diamond from the gas phase may be provided.

Abstract: In a silicon carbide semiconductor film forming apparatus, first to third gasses are introduced into first to third separation chambers through first to third inlets, respectively. The first and second gasses are silicon raw material including gas and carbon raw material including gas, and the third gas does not include silicon and carbon. The first and second gasses are independently supplied to growth space through first and second supply paths extending from the first and second separation chambers, respectively. The third gas is introduced through a third supply path from the third separation chamber between the first and second gasses.

Abstract: A composition, reactor apparatus, method, and control system for growing epitaxial layers of group III-nitride alloys. Super-atmospheric pressure is used as a process parameter to control the epitaxial layer growth where the identity of alloy layers differ within a heterostructure stack of two or more layers.

Abstract: Inorganic nanofibers comprise an inorganic matrix material surface functionalized with at least one metal oxide in crystalline form. Crystal growth on external surfaces may occur in substantial alignment with a longitudinal axis of the nanofibers, and the crystals are typically between about 10.0 nm and 30.0 nm in size. The nanofibers may be hollow (i.e., nanotubes) or they may be randomly dispersed together in the form of a nanofiber mat. Methods for making the nanofibers comprise spinning a dispersion comprising linear polymers and metal oxide precursors.

Abstract: A fiber comprising polyethylene-2,5-furan-dicarboxylate, is prepared by melt spinning in a process wherein a molten composition comprising polyethylene-2,5-furan-dicarboxylate having an intrinsic viscosity of at least 0.55 dl/g, determined in dichloroacetic acid at 25° C., is passed through one or more spinning openings to yield molten threads; wherein the molten threads are cooled to below the melting temperature of the composition to yield spun fibers; and wherein the spun fibers are drawn to a linear density in the range of 0.05 to 2.0 tex per fiber. The invention also proves a fiber comprising polyethylene-2,5-furan-dicarboxylate having a linear density of 0.05 to 2.0 tex, wherein the polyethylene-2,5-furan-dicarboxylate has an intrinsic viscosity of at least 0.45 dl/g, determined in dichloroacetic acid at 25° C.

Abstract: Described herein are apparatuses and methods of creating fibers, such as microfibers and nanofibers. The methods discussed herein employ centrifugal forces to transform material into fibers. Apparatuses that may be used to create fibers are also described. To improve the collection of fibers, various devices and systems for controlling the deposition pattern of the produced fibers are described.

Abstract: The present invention relates to a method for the production of polysaccharide fibers which contain ?(1?3)-glucan as a fiber-forming substance, as well as to the fibers made thereby, and to their use.

Abstract: The present invention relates to a method for the production of polysaccharide fibers which contain a mixture of cellulose and ?(1?3)-glucan as a fiber-forming substance, as well as to the fibers made thereby, and to their use.

Abstract: A flash-spun plexifilamentary fiber strand having a BET surface area of less than 12 m2/g, a crush value of at least 0.9 mm/g wherein said fiber strand comprises predominantly fibers formed from polyethylene, said fibers having a total crystallinity index of less than 55%, said fiber strand having an elongation at break greater than 55% and sheets made thereof.

Abstract: Disclosed is a fiber made of a polyester resin, wherein the polyester resin is a copolymer including a dicarboxylic acid component and a glycol component; of the dicarboxylic acid component, 80 mol % or more is accounted for by a terephthalic acid component, 4.0 to 12.0 mol % is accounted for by a cyclohexane dicarboxylic acid component, and 2.0 to 8.0 mol % is accounted for by an adipic acid component; and the glycol component contains an ethylene glycol component as a main component thereof. A polyester fiber is thereby provided which can be dyed with excellent deep color property and fastness property in dyeing under a normal pressure environment and which can offer stable quality and processing performance also by a direct spinning stretching method or other general melt-spinning methods.

Abstract: Disclosed is a method of: providing a mixture of a polymer or a resin and a transition metal compound, producing a fiber from the mixture, and heating the fiber under conditions effective to form a carbon nanotube-containing carbonaceous fiber. The polymer or resin is an aromatic polymer or a precursor thereof and the mixture is a neat mixture or is combined with a solvent. Also disclosed are a carbonaceous fiber or carbonaceous nanofiber sheet having at least 15 wt. % carbon nanotubes, a fiber or nanofiber sheet having the a polymer or a resin and the transition metal compound, and a fiber or nanofiber sheet having an aromatic polymer and metal nanoparticles.

Abstract: The present invention concerns a method for the recovery of solvent in a process for preparation of regenerated cellulosic fibers using sodium hydroxide as solvent for cellulose dissolving in the manufacturing of a cellulose spinning dope wherein sodium hydroxide present in the spinning dope is at least partially recovered and recycled as sodium hydroxide from a cellulose fiber regeneration or cellulose coagulation step and wherein said cellulose fiber regeneration or cellulose coagulation step consists of a bath into which cellulose spinning dope is injected. Recovered sodium hydroxide may be directly or indirectly recycled from a cellulose fiber regeneration or cellulose coagulation step to a cellulose dissolving step.

Abstract: A clothing wire for a clothing roller of a carding machine extends in a wire longitudinal direction and having a base segment, which is thicker transversely to the wire longitudinal direction. A leaf segment, which is narrower compared to the base segment, protrudes from the base segment. A plurality of teeth is formed on the leaf segment along the clothing wire in the wire longitudinal direction. Each tooth has two leaf segment lateral surfaces adjoining the base segment. On at least one of the leaf segment lateral surfaces, at least one projection is formed on each tooth. The cross-sectional profile of the projection is asymmetric and preferably has the contour of a nose. The design of the clothing wire results in a homogenization or parallelization of the fibers, with little wear of the clothing wire and less damage to the fibers.