Abstract: A zinc-based anti-corrosion coating is disclosed for steel sheets or steel strips, which for the purpose of hardening are at least in parts heated to a temperature above Ac3 and then cooled at a temperature situated at least partially above the critical cooling speed, the anti-corrosion coating being a coating applied by hot dipping. In addition to at least 75% by weight zinc and possible unavoidable impurities, the coating also contains 0.5 to 15.0% by weight manganese and 0.1 to 10.

Abstract: Methods are disclosed for applying a protective layer to a can component and for modifying surface properties of a can component, feedstock or tooling. An example method involves: (a) directing a precursor plasma plume at a surface of a can component via at least one precursor plasma gun, where the precursor plasma plume includes an ionized gas and an ionized precursor and (b) treating at least a portion of the surface of the can component with the precursor plasma plume and thereby forming a first layer on the portion of the surface of the can component treated with the precursor plasma plume.

Abstract: A process for applying a chromized layer on a substrate by first applying an overlay coating to a portion of the substrate, and subsequently contacting a different portion of the substrate and the overlay with a gas containing gaseous chromium, wherein the gaseous chromium can be generated from a chromium source and an activator. The process prepares the substrate, often a jet engine airfoil, for service.

Abstract: Some embodiments provide methods of manufacturing a release mechanism, comprising: carburizing a plurality of locking shoes configured to be positioned within a release mechanism intended for use in temperatures that are below 5° C. and cooperatively implemented to withstand forces of at least several hundred thousand pounds, wherein the carburizing comprises exposing the plurality of locking shoes to a carbon-bearing atmosphere and heat treating the plurality of locking shoes while exposed to the carbon-bearing atmosphere; austenitizing the plurality of locking shoes at a temperature of greater than 1400° F. following the carburizing; performing a first tempering the plurality of locking shoes at a first tempering temperature; performing a second tempering of the plurality of locking shoes at a second tempering temperature that is different than the first tempering temperature; and flame hardening one or more surfaces of each of the plurality of locking shoes.

Abstract: An apparatus for forming an optical pattern includes a vacuum chamber, a mount on which a substrate to be prepared using a mask is to be supported, a diffusion unit adjacent the mask, spaced apart from the mask by a preset interval, and facing the mask, the diffusion unit to diffuse light incident thereon as uniform surface light and transmit the uniform surface light to the mask, and a light source unit spaced in a lateral direction from the diffusion unit, the light source unit to generate light to be incident on the diffusion unit.

Abstract: A system and process for inter alia coating a substrate such as glass substrate with a layer of aluminum oxide to create a scratch-resistant and shatter-resistant matrix comprised of a thin scratch-resistant aluminum oxide film deposited on one or more sides of a transparent and shatter-resistant substrate for use in consumer and mobile devices such as watch crystals, cell phones, tablet computers, personal computers and the like. The system and process may include a sputtering technique. The system and process may produce a thin window that has a thickness of about 2 mm or less, and the matrix (i.e., the combination of the aluminum oxide film and transparent substrate) may have a shatter resistance with a Young's Modulus value that is less than that of sapphire, i.e., less than about 350 gigapascals (GPa). The thin window has superior shatter-resistant characteristics.

Abstract: A metal article includes a metallic substrate and a thermal barrier coating. A thermally grown mixed oxide layer between the metal substrate and the thermally grown mixed oxide layer enhances the spallation resistance of the thermal barrier coating on the metallic substrate of metal article. In an embodiment, the thermal barrier coating is about 51 weight percent gadolinia and about 49 weight percent yttria partially stabilized zirconia.

Abstract: An amorphous and nano nitride composite thin film, a method for forming the same, and an electronic device having the same are provided. The amorphous and nano nitride composite thin film has a composite structure in which a nitride phase that includes Zr and Al as nitride constituent elements and at least one metal phase are mixed, wherein the metal phase includes at least one element selected from the group including Cu and Ni, the nitride phase includes a ZrN crystalline phase in which a size of a grain is in the range of 10 nm to 500 nm, and a volume fraction of the ZrN crystalline phase is 10% or more.

Abstract: A deposition source includes a reflector at an upper end of a frame, the reflector being in a form of a reflection plate in which nozzle apertures are located, the reflector having a sink inclined surface inclining toward a central portion in which the nozzle apertures are located, the nozzles apertures being recessed from an edge front end portion that is on the upper end of the frame.

Abstract: A method for processing a substrate may include providing a patterning feature on the substrate, the patterning feature having a sidewall. The method may further include implanting a first ion species into the patterning feature during a first exposure, the first ion species having a first implantation depth; and implanting a second ion species into the patterning feature during a second exposure, the second ion species having a second implantation depth less than the first implantation depth.

Abstract: Modulation of a waveform applied to a cathode of a sputtering deposition chamber regulates the sputtering rate and density and kinetic energy of ions in a sputtering deposition chamber. A waveform may include a pulsed DC waveform with a modulated AC signal superimposed on the pulsed DC waveform. The DC waveform may have a reverse voltage period. A reverse voltage limiting circuit is provided so as to limit the reverse voltage spike to a selected reverse voltage threshold. One may modulate various properties of the waveform to increase or decrease sputtering rates and thin-film quality.

Abstract: In one aspect, articles employing CVD coatings deposited at low temperatures are described herein. Briefly, a coated article described herein comprises a substrate and a refractory coating adhered to the substrate, the refractory coating including a layer of TiN deposited by thermal CVD, the layer of TiN having an average crystallite size of 0.05 ?m to 0.5 ?m and residual tensile stress of 100 MPa to 700 MPa.

Abstract: A method for depositing a film on a polymer substrate is disclosed. The method includes exposing a polymer substrate to a liquid comprising a first reactant to provide a plurality of reactive sites over the polymer substrate, wherein the first reactant comprises aluminum or boron; and introducing a second reactant comprising silicon in a vapor form to said plurality of reactive sites that provide a catalytic growth of the film, wherein the growth of the film is self-limited In certain embodiments, the film can include silica, aluminum silicate, or borosilicate.

Abstract: Compositions of matter including a cloth base comprising one or more not fully carbon fibers woven together, where at least a portion of the not fully carbon fibers of the cloth base are carbonized and comprise graphene petals thereon. The not fully carbon fibers may be selected from a variety of materials including cellulose fibers such as hemp, linen, and/or cotton, and may also or alternatively include synthetic fibers such as polyester, Kevlar, and/or Rayon. A method for producing such a carbonized conductive fiber-based cloth is also provided, the method including carbonizing a cloth base comprising not fully carbon fibers in a plasma stream of a plasma process and growing graphene petals integrally on the carbonized cloth using the same plasma process.

Abstract: A method and system for coating metallic powder particles is provided. The method includes: disposing an amount of metallic powder particulates within a fluidizing reactor; removing moisture adhered to the powder particles disposed within the reactor using a working gas; coating the powder particles disposed within the reactor using a precursor gas; and purging the precursor gas from the reactor using the working gas.

Abstract: Provided is a method and an apparatus for producing a novel polymer that is easy and convenient to control the reactivity and excellent in film thickness control and a method and an apparatus for producing an organic film. A production apparatus includes: a first means for turning a raw-material solution containing an organic compound into a mist or droplets by an atomization or a droplet-formation; a second means for carrying the mist or droplets onto a substrate using a carrier gas; and a third means for subjecting the mist or droplets to a thermal reaction by heating on the substrate.

Abstract: Apparatus and methods for spatial atomic layer deposition are disclosed. The apparatus include a gas delivery system comprising a first gas flowing through a plurality of legs in fluid communication with a valve and a second gas flowing through a plurality of legs into the valves.

Abstract: Embodiments of the present disclosure generally relate to a susceptor for thermal processing of semiconductor substrates. In one embodiment, the susceptor includes a first rim, an inner region coupled to and surrounded by the first rim, and one or more annular protrusions formed on the inner region. The one or more annular protrusions may be formed on the inner region at a location corresponding to the location where a valley is formed on the substrate, and the one or more annular protrusions help reduce or eliminate the formation of the valley.

Abstract: The present invention relates to a substrate structure in which organic-inorganic hybrid thin films are laminated and a method for preparing the same and more specifically to a substrate structure in which organic-inorganic hybrid thin films are laminated that can be used for light emitters, display devices and solar cell devices wherein the organic-inorganic hybrid thin film including a stable new functional group, an inorganic precursor and an organic precursor are alternately used to afford stability in air and a method for preparing the same.

Abstract: There is provided a substrate processing apparatus which supplies a processing gas onto a surface of a substrate on a substrate mounting table from a gas nozzle. The apparatus includes: a ring member installed in a leading end side of to the gas nozzle rather than a through-hole and including an inner peripheral surface on which the gas nozzle inserted into the through-hole is mounted, at least one of contours of an outer peripheral surface and the inner peripheral surface being set to a spiral curve or a polygon obtained by linearly approximating the curve; and a pedestal part on which the ring member is mounted at left and right positions spaced apart from each other in a circumference direction of the ring member. A height of a position at which the gas nozzle is supported by the ring member is adjusted with a rotation of the ring member.

Abstract: Apparatus and methods for measuring the proximity between two components using a hardstop, an actuator and an emitter/detector passing light through a passage in the actuator are disclosed. The passage provides attenuation to the light which changes as the gap between the components changes allowing the measurement and control of the gap. Methods of determining the topology of the components using the apparatus are also described.

Abstract: A system for monitoring thin film deposition is described. The system includes a quartz crystal and a synthesizer to generate a modulated signal. The modulated signal is to be grounded through the quartz crystal. The system also includes a phase detector to determine a phase of the modulated signal from the quartz crystal in order to monitor thin film deposition. A modulation index can be selected so that, at resonance, high frequency of the signal matches the crystal frequency.

Abstract: This disclosure relates to a method for preparing a polymer thin film with water repellency and oil repellency, including: thermally decomposing a thermal initiator to form a radical; reacting the radical with a monomer mixture of a specific composition to synthesize a polymer; and depositing the synthesized polymer on a substrate, and a polymer thin film with water repellency and oil repellency including a polymer resin including (meth)acrylate-based repeat units substituted with a fluorine-containing functional group and repeat units derived from a compound including at least two reactive functional groups at a specific ratio.

Abstract: The present invention provides: a catalyst for electroless plating composed of a complex of a compound (X) and metal nanoparticles (Y), wherein the compound (X) is produced by polymerizing a monomer mixture (I) containing a (meth)acrylic acid-based monomer having at least one anionic functional group selected from the group consisting of a carboxyl group, a phosphoric acid group, a phosphorous acid group, a sulfonic acid group, a sulfinic acid group and a sulfenic acid group, and also provides a metal film produced using the catalyst, and a method for producing a metal film using the catalyst.

Abstract: Compositions and methods for preventing corrosion of equipment having a corrodible metal surface that contacts water in a hydrostatic system are provided. Compositions may include a liquid-phase corrosion inhibitor and vapor-phase corrosion inhibitor. Methods may include introducing into the hydrostatic system a liquid-phase corrosion inhibitor, vapor-phase corrosion inhibitor and/or a scaling inhibitor. A protective film can be formed on the corrodible metal surface.

Abstract: This application relates to oxide particles, preferably transition metal oxide particles, made via the application of a voltage across an electrolyte solution. The electrolyte solution includes a transition metal salt dissolved in water, and preferably also includes a compound for increasing the electrical conductivity of the electrolyte. The particles made by the processes disclosed herein, can have sizes in the micrometer or nanometer ranges. The oxide particles can have a variety of uses, including for charge storage devices. As an example, manganese oxide particles, and methods for making the same, are disclosed for a variety of uses including lithium ion batteries.

Abstract: According to one embodiment, an electrolytic apparatus includes a diaphragm of a porous membrane having a water permeability of 0.0024 to 0.6 mL/min per cm2 at a differential pressure of 20 kPa, a first electrode provided to oppose the diaphragm, and a second electrode opposing the first electrode via the diaphragm, and the difference between the hydraulic pressures applied onto both sides of the porous membrane is within ±20 kPa.

Abstract: Apparatus for seawater acidification including an ion exchange, cathode and anode electrode compartments and cation-permeable membranes that separate the electrode compartments from the ion exchange compartment. Means is provided for feeding seawater through the ion exchange compartment and for feeding a dissociable liquid media through the anode and cathode electrode compartments. A cathode is located in the cathode electrode compartment and an anode is located in the anode electrode compartment and a means for application of current to the cathode and anode is provided. A method for the acidification of seawater by subjecting the seawater to an ion exchange reaction to exchange H+ ions for Na+ ions. Carbon dioxide may be extracted from the acidified seawater. Optionally, the ion exchange reaction can be conducted under conditions which produce hydrogen as well as carbon dioxide. The carbon dioxide and hydrogen may be used to produce hydrocarbons.

Abstract: This invention includes a catalytic copper electrode is selected from the group comprising copper nanofoam, copper aerogel, and copper nanoparticles. Particular note is made of the catalytic copper electrode having at least about 5 times and preferably about 10 times the electrochemically accessible surface area as determined by the Randles-Sevcik equation at 50 mV/s. particular note is made of the catalytic coper electrode being a copper nanofoam electrode. This invention further includes a method for the reduction of CO2 by the steps of (i) providing a membrane divided electrochemical cell comprising an anode in a first cell compartment, a catalytic-copper electrode in a second cell compartment containing an aqueous electrolyte in contact with the anode and cathode; (ii) introducing CO2 to said second cell compartment (iii) exposing said CO2 to said catalytic-copper electrode at a step potential between about ?0.8 and preferably about ?1.0 and about ?1.

Abstract: The invention provides a process and an apparatus for the production of a metal selected from metallic alkali metals, M, and alkaline earth metals, Mac from the molten salts thereof, the apparatus including at least an electrochemical cell with planar anodes and cathodes installed in the following sequence: {a-c-a)n to produce alkali metal or alkaline earth metals electrolytically!y from the respective chloride salts thereof, wherein n represents the number of times the sequence of anode-cathode-anode is repeated.

Abstract: Provided is a method for producing metal by molten salt electrolysis, by which the metal can be efficiently produced. A method for producing metal by using an apparatus for molten salt electrolysis having an electrolytic cell and an electrode pair, wherein the molten salt electrolysis in the electrolytic cell and heating of the molten salt by a Joule heat generation between a pair of electrodes for electrolysis are simultaneously performed; and wherein the apparatus for molten salt electrolysis has at least two sets of electrode pair, and at least one set of the electrode pairs is electrically opened.

Abstract: A zinc production method including a chlorination step 101 at which crude zinc chloride vapor 3 and an oxygen gas 2 are obtained by bringing electric furnace dust 1 containing zinc oxide or secondary dust 1 generated at the time of reducing the electric furnace dust in a reduction furnace into contact with a mixed gas containing a chlorine gas 8 and an oxygen-containing gas 10, converting a zinc oxide component in the electric furnace dust 1 or the secondary dust 1 into zinc chloride, and vaporizing the zinc chloride. The zinc production method further includes purification steps 102, 104, and 105 at which a zinc chloride component contained in the crude zinc chloride vapor 3 is separated from components 5 and 7 other than zinc chloride contained in the crude zinc chloride vapor 3 to obtain a purified zinc chloride melt 6, and an electrolysis step 103 at which the purified zinc chloride melt 6 is electrolyzed to obtain a zinc melt 9 and the chlorine gas 8.

Abstract: An apparatus for electroplating metal on a substrate while controlling plating uniformity includes in one aspect: a plating chamber having anolyte and catholyte compartments separated by a membrane; a primary anode positioned in the anolyte compartment; an ionically resistive ionically permeable element positioned between the membrane and a substrate in the catholyte compartment; and a secondary electrode configured to donate and/or divert plating current to and/or from the substrate, wherein the secondary electrode is positioned such that the donated and/or diverted plating current does not cross the membrane separating the anolyte and catholyte compartments, but passes through the ionically resistive ionically permeable element. In some embodiments the secondary electrode is an azimuthally symmetrical anode (e.g., a ring positioned in a separate compartment around the periphery of the plating chamber) that can be dynamically controlled during electroplating.

Abstract: An electro-processing apparatus has a contact ring including a seal which is able to compensate for electric field distortions created by a notch (or other irregularity) on the wafer or work piece. The shape of the contact ring at the notch is changed, to reduce current crowding at the notch. The change in shape changes the resistance of the current path between a thief electrode and the wafer edge to increase thief electrode current drawn from the region of the notch. As a result, the wafer is plated with a film having more uniform thickness.

Abstract: In one instance, the invention provides a method of growing bulk crystal of group III nitride using a seed crystal selected by (a) measuring x-ray rocking curves of a seed crystal at more than one point, (b) quantifying the peak widths of the measured x-ray rocking curves, and (c) evaluating the distribution of the quantified peak widths. The invention also includes the method of selecting a seed crystal for growing bulk crystal of group III nitride. The bulk crystal of group III nitride can be grown in supercritical ammonia or a melt of group III metal using at least one seed selected by the method above.

Abstract: The present invention provides microfabricated substrates and methods of conducting reactions within these substrates. The reactions occur in plugs transported in the flow of a carrier-fluid.

Abstract: A method for producing a SiC single crystal, including flowing a high-frequency current at a first frequency to an induction heating coil disposed around a graphite crucible to heat raw material Si to a predetermined temperature, thereby while melting the raw material Si, dissolving out C from said graphite crucible to form a Si—C solution, and after heating to the predetermined temperature, lowering the frequency from the first frequency to a second frequency to warm and hold the Si—C solution.

Abstract: A method of growing a monocrystalline silicon ingot is described. The method includes the steps of providing a monocrystalline ingot growing apparatus including a chamber having an internal pressure, and a crucible disposed within the chamber, preparing a silicon melt in the crucible, introducing an inert gas into the chamber from a gas inlet above the silicon melt, wherein the inert gas flows over the surface of the silicon melt and has a flow rate, introducing a volatile dopant including indium into the silicon melt, growing an indium-doped monocrystalline silicon ingot, and controlling the indium dopant concentration in the ingot by adjusting the ratio of the inert gas flow rate and the internal pressure of the chamber.

Abstract: Provided is a SiC single crystal wafer, which is manufactured from a SiC single crystal ingot grown by the sublimation-recrystallization method, and which brings about high device performance and high device manufacture yield when used as a wafer for manufacturing a device. The SiC single crystal wafer has, in a surface thereof, a basal plane dislocation density of 1,000 dislocations per cm2 or less, a threading screw dislocation density of 500 dislocations per cm2 or less, and a Raman index of 0.2 or less. Further provided is a method of manufacturing a SiC single crystal ingot, including controlling heat input from a side surface of the single crystal ingot during growth of a single crystal, to thereby grow the crystal while changes in the temperature distribution of the single crystal ingot are reduced.

Abstract: A method for thinning a sapphire substrate is provided that includes placing a sapphire substrate in a pre-heat tank to raise the temperature of said sapphire substrate; placing the pre-heated sapphire substrate in a wet etch tank comprising a solution including at least one of H2SO4 and H3PO4 at a temperature ranging between 200-400° C.; monitoring the time to determine when to remove said sapphire substrate from said wet etch tank to thin said sapphire substrate; and placing the sapphire substrate in a cool-down tank to lower the temperature of the sapphire substrate. The method provides for a high throughput and is cost effective process, thereby allowing for the adoption of sapphire in high volume and lower cost applications.

Abstract: A wavelength-shift composite light-storing powder and method of manufacturing and applying the same. Wherein, inorganic metal oxide and light-storing material containing rare earth elements are made to collide at high speed in an environment of extremely low temperature. The collision process makes said inorganic metal oxide to produce fusion reaction on surface of said light-storing material, that causes changes of lattice structure, to generate photon shift phenomenon and produce said wavelength-shift composite light-storing powder. Said composite light-storing powder is apt to engage cross-linked structure of thermoplastic polymer in a high temperature blending process, to achieve even distribution. Finally, through a filament process to produce successfully light-storing fibers capable of emitting lights of various wavelengths, to raise its heat resistance and wash durability.

Abstract: A fully dense ceramic and/or other inorganic fiber containing elongated crystal grains in and around the fiber center and oriented along the fiber axis, with a smooth transition to more equiaxed grains towards the radial periphery of the fiber, and method for producing such.

Abstract: Weft knitted fabric for making molded cups directly without using a laminating sponge. The fabric includes three interlocked layers, overlayer, underlayer and connecting layer. The overlayer is formed from fusible fibers and polyurethane fibers, the underlayer is formed from microfiber and polyurethane fibers, and the connecting layer is formed from synthetic monofilament yarns.

Abstract: A circular knitting machine (1) for knitwear or hosiery, comprising a bearing structure (2), a needle cylinder (C), a plurality of needles and a plurality of thread feeding points, or feeders (3), positioned circumferentially about the needle cylinder, in which the thread is supplied to the needles. Each feeder is provided with at least a thread guide group (4), comprising a body (5), a pneumatic supply inlet (6), a plurality of feeders, a plurality of pneumatic actuators able to move the feeders, and a plurality of solenoid valves (8) mounted and connected directly to the body (5), wherein each solenoid valve activate or deactivates the pneumatic supply to a respective pneumatic actuator of the thread guide group.

Abstract: Warp knitting fabric having a double needle overlap structure forming two loops on two adjacent needles in the same course, and loops being formed from double yarns one of which is a chemical filament yarn and the other yarn is a spandex yarn, and both of the yarns being knitted with the same lapping movement.

Abstract: The invention pertains to a method of manufacturing a product from textile waste comprising a majority of cotton or wool, the method comprising the steps of; collecting the textile waste comprising; a majority of cotton or wool, granulating said, textile waste into fibers having an average fiber length of between 0.5 mm and 4 mm, mixing said granulated textile waste with thermoplastic binder, and forming a nonwoven mat from the mixture of said granulated textile waste and binder. Preferably the method further comprises the steps of placing said: mat in a preheated three-dimension mould or flat press, and pressing the mat into a product having a shape determined: by the shape of the three-dimensional mould or flat press. The invention also pertains to a product produced by said method.

Abstract: An entangled carbon-fiber non-woven production method for producing an entangled carbon-fiber non-woven fabric from carbon fibers up to a fiber length of 100 mm, with the following steps: supplying carbon fibers; loosening/combing apart and aerodynamically isolating the carbon fibers; aerodynamically calming the isolated carbon fibers; introducing the calmed and isolated carbon fibers into a vertically arranged air shaft (1), wherein the carbon fibers are introduced at the upper end (12) of the air shaft (1); mixing the carbon fibers within the air shaft (1) in a contactless manner by air whirling by means of a plurality of individual air flows; aerodynamically depositing the carbon fibers onto a moving mold or deposit surface (2) arranged below the air shaft (1), wherein the aerodynamic deposition is performed by means of suctioning below the mold or the deposit surface (2), wherein the air flows are varied and/or adjusted in the direction and/or intensity thereof and the air flows are produced and varied by

Abstract: Provided is an embroidery pattern placement system including: an image-taking unit configured to take an image with an embroidery frame and cloth to be embroidered included in an image taking range; an image analyzing unit configured to analyze to make correspondence between the information of the embroidery frame obtained by the embroidery frame information obtaining unit and the embroidery frame in the image; a display control unit configured to display the embroidery pattern obtained by the embroidery pattern obtaining unit and at least a part of the image taken by the image-taking unit in an overlapping manner at an identical scale; and an operation unit configured to accept an operation from a user; an embroidery placement editing unit configured to determine a position and orientation of the embroidery pattern relative to the embroidery frame according to a content of the operation to the operation unit.

Abstract: The presser foot 1 has a rod pin 10 as resistor member R, the engagement groove 20 is provided with the presser holder 2, the rod pin 10 is received by the engagement groove 20, and fixed by the fix pin 15. By measuring the resistance value of the rod pin 10, the rod pin 10 is identified and recognized the type or the like of the rod pin 10. The terminals 23, 23 are provided with the engagement groove 20, which contact the rod pin 10 for measuring the resistance. The terminals 23, 23 are connected to the circuit 25 that connects to the circuit 35 of the presser bar 3 at the receiving member 24. The receiving groove 29 is formed at the presser holder 2, the inserting part 39 is formed at the lower end of the presser bar 3, and the presser holder 2 is connected to the presser bar 3 by setting the inserting part 39 in the receiving groove 29 and fixing by the fixing screw 27.

Abstract: In an overlock sewing machine, a main shaft fixing operating shaft is provided with a differentiation ring that can be swung in a predetermined range such that, when the rotation of a main shaft is to be enabled, it is set to an enable state in a stationary state, and when the rotation of the main shaft is disabled, it is swung and shifted from the enable position. Furthermore, a looper cover open/closed detection configuration is configured by modifying a part of a typical known configuration. Such an arrangement provides an overlock sewing machine having a simple configuration that requires only a single micro switch to detect the switching between the threading mode and the sewing mode and to detect the open/closed state of the looper cover.