Abstract: An improved Plasma Enhanced Atomic Layer Deposition (PEALD) system and related operating methods are disclosed. A vacuum reaction chamber includes a vacuum system that separates a first outflow from the reaction chamber, comprising unreacted first precursor, from a second outflow from the reaction chamber, comprising second precursor and any reaction by products from the reaction of the second precursor with the coating surfaces. A trap, including trap material surfaces, is provided to remove first precursor from the first outflow when the first precursor reacts with the trap material surfaces. When the second precursor includes a plasma generated material, the second precursor is not passed through the trap. An alternate second precursor source injects a suitable second precursor into the trap to complete a material deposition layer onto the trap surfaces thereby preparing the trap material surfaces to react with the first precursor on the next material deposition cycle.

Abstract: A method and apparatus of forming a thin film using an organic metal compound gas and oxidizing agents are disclosed. The method includes performing a first film formation process of forming a thin film on an object to be processed using an organic metal compound gas and a first oxidizing agent; performing an annealing process of supplying a second oxidizing agent having stronger oxidizing power than the first oxidizing agent into the reaction chamber while an interior of the reaction chamber is heated to a predetermined temperature; and performing a second film formation process of forming a thin film on the thin film formed in the first thin film formation process using the organic metal compound gas and the second oxidizing agent.

Abstract: A deposition apparatus includes a chuck in a process chamber, the chuck having a top surface on which a substrate is loaded, a showerhead disposed over the chuck, and a fence extension disposed in the process chamber. Plasma is generated in a space between the showerhead and the loaded substrate during a deposition process. The fence extension at least partially confines the plasma in the space during the deposition process, thereby enabling improved thickness uniformity and reliability of a layer deposited on the loaded substrate during the deposition process.

Abstract: A method includes: transmitting a sublimated raw material together with a carrier gas to a raw material trapping part where the raw material is temporarily trapped; calculating a difference between trapped amounts of the raw material trapped in the raw material trapping part during a predetermined period of time as an increase in trapped amount; obtaining at least one of a period of time required to reach the trapped amount to a target value and a trapping rate of the raw material, based on the increase, a period of trapping time, and a trapped amount measured at the time of completing trapping the raw material; refilling the raw material into the raw material trapping part based on the at least one of the period of refilling time and the trapping rate; and sublimating the raw material and supplying the same together with the carrier gas to a consumption area.

Abstract: Provided is a susceptor capable of achieving improved thermal uniformity while suppressing reduction in its temperature increase rate and heat utilization efficiency. A susceptor includes a plate-shaped first member including a wafer placement surface on which to place a wafer, and a second member supporting the first member and laid on the first member in the direction perpendicular to the wafer placement surface. The thermal conductivity of the first member is higher than the thermal conductivity of the second member.

Abstract: An apparatus for processing two or more substrates in a batch process by subjecting at least part of the surface of the substrates to alternating surface reactions of at least a first and a second precursor. The apparatus includes: multiple substrate holders for supporting the substrates, and a reaction chamber that includes a reaction space for depositing material on the surface of the substrates during a processing phase. The substrate holders are installed or arranged to be installed inside the reaction chamber for processing of the substrates inside the reaction chamber during the processing phase. During a loading phase in which the substrates are loaded to the substrate holders by a loading device, at least some of the substrate holders are arranged to be movable relative to each other.

Abstract: A gas barrier film with a protective layer including inorganic particles is provided. A gas barrier effect of the gas barrier film is improved by including inorganic nanoparticles in a protective layer when a protective coating is performed to protect a gas barrier layer.

Abstract: Certain embodiments herein relate to methods of conditioning a reaction chamber that is used for remote plasma processing. Other embodiments herein relate to apparatus used for remote plasma processing. In various embodiments, a reaction chamber is conditioned by forming a low recombination material coating on interior chamber surfaces. The low recombination material helps minimize the degree of radical recombination that occurs within the reaction chamber when the reaction chamber is used to process substrates. During processing on substrates, the low recombination material may become covered by relatively higher recombination material (e.g., as a byproduct of the substrate processing), which results in a decrease in the amount of radicals available to process the substrate over time. The low recombination material coating may be reconditioned through exposure to an oxidizing plasma, which acts to reform the low recombination material coating.

Abstract: A source supply apparatus configured to supply a source material sublimated from a solid source material together with a carrier gas to a source consumption zone, includes a source material supplier defining a sealed space and resolidifying and precipitating the source material in a thin film form of, a carrier gas supply passage through which the carrier gas is supplied to the source material supplier, a temperature adjustment part configured to adjust temperature of the source material supplier, a supply passage through which the source material and the carrier gas are supplied from the source material supplier to the source consumption zone, a flow rate measurement part measuring a flow rate of the source material supplied from the source material supplier to the source consumption zone, and a controller configured to control the temperature adjustment part based on a measured flow rate obtained from the flow rate measurement part.

Abstract: A device for performing ALD includes a housing having a vacuum chamber that surrounds a horizontal flow reactor. The device further includes a gas distribution system for delivering gases to the reactor. The gas distribution system includes at least one of a high temperature valve and a high temperature filter disposed inside the vacuum chamber. The high temperature valve (and/or filter) controls (and/or filters) a supply of a precursor/reactant gas, inert gas, or precursor/reactant and inert gas mixture before it enters the horizontal flow reactor.

Abstract: A substrate processing apparatus (100) comprising a process tunnel (102) including a lower tunnel wall (122), an upper tunnel wall (142), and two lateral tunnel walls (128), said tunnel walls being configured to bound a process tunnel space (104) that extends in a longitudinal transport direction (7) and that is suitable for accommodating at least one substantially planar substrate (180) oriented parallel to the upper and lower tunnel walls (122, 142), the process tunnel being divided in a lower tunnel body (120) comprising the lower tunnel wall and an upper tunnel body (140) comprising the upper tunnel wall, which tunnel bodies (120, 140) are separably joinable to each other along at least one longitudinally extending join (160), such that they are mutually movable between a closed configuration in which the tunnel walls (122, 128, 42) bound the process tunnel space (104) and an open configuration that enables lateral maintenance access to an interior of the process tunnel.

Abstract: An apparatus and method for fabricating a semiconductor device using a 4-way valve with improved purge efficiency by improving a gas valve system by preventing dead volume from occurring are provided. The apparatus includes a reaction chamber in which a substrate is processed to fabricate a semiconductor device; a first processing gas supply pipe supplying a first processing gas into the reaction chamber; a 4-way valve having a first inlet, a second inlet, a first outlet, and a second outlet and installed at the first processing gas supply pipe such that the first inlet and the first outlet are connected to the first processing gas supply pipe; a second processing gas supply pipe connected to the second inlet of the 4-way valve to supply a second processing gas; a bypass connected to the second outlet of the 4-way valve; and a gate valve installed at the bypass.

Abstract: Substrate treating apparatus including a cover that covers a substrate on a plate. The cover undersurface is substantially horizontal and adjacent to a surface of the substrate. Through a gas flow path, a treatment gas is supplied to the substrate. The gas flow path includes a swirl chamber, a diameter contraction chamber, and a diameter expansion chamber. In the swirl chamber, the treatment gas flows around the central axis. The diameter contraction chamber is disposed below and in communication with the swirl chamber, and has an inner diameter that decreases from its upper end toward its lower end. The diameter expansion chamber is disposed below and in communication with the diameter contraction chamber, and has an inner diameter that increases from its upper end toward its lower end. The lower end of the diameter expansion chamber includes an opening on the undersurface of the cover.

Abstract: A substrate processing system having a hot reactor with two load locks and two associated load/unload units, and a related method of operating the system, are disclosed. Substrates are concurrently moved from the reactor into one of two load locks and from the other of the two load locks into the reactor. A bidirectional transfer mechanism is used for the concurrent transfers, such that successive transfers in opposite directions are interleaved. Substrates are heated in the load locks prior to processing in the reactor. The reactor applies processing to substrates, to form processed substrates. Processed substrates are cooled in the load locks after processing in the reactor. Respective load and unload units load substrates into the load locks and unload processed substrates from the load locks. The interleaved concurrent transfers minimize or make zero the idle time of the reactor.

Abstract: Provided is a preliminary treatment method for a workpiece capable of shortening a cycle time by preventing a nodule from being formed on a carbon film. The preliminary treatment method for the workpiece is performed before a carbon film is formed on a surface of a workpiece W. A bias voltage is applied to the workpiece W disposed in a treatment space S maintained at a predetermined vacuum degree while an oxygen gas is supplied to the treatment space S before a material gas is supplied to the treatment space S, oxygen plasma is generated along the surface of the workpiece W, and oxygen, hydrogen, or water stuck to the surface of the workpiece W is removed.

Abstract: Apparatus and method for monitoring a vapor deposition installation in which a gas mixture can undergo gas phase nucleation (GPN) and/or chemically attack the product device, under process conditions supportive of such behavior. The apparatus includes a radiation source arranged to transmit source radiation through a sample of the gas mixture, and a thermopile detector assembly arranged to receive output radiation resulting from interaction of the source radiation with the gas mixture sample, and to responsively generate an output indicative of onset of the gas phase nucleation and/or chemical attack when such onset occurs. Such monitoring apparatus and methodology is useful in tungsten CVD processing to achieve high rate tungsten film growth without GPN or chemical attack.

Abstract: The method for producing noble metal nanocomposites involves reducing noble metal ions (Ag, Au and Pt) on graphene oxide (GO) or carbon nanotubes (CNT) by using Artocarpus integrifolia leaves extract as a reducing agent. As synthesized MNPs/GO and MNPs/CNT composites have been characterized using X-ray diffraction (XRD), transmission electron microscope (TEM) imaging, and energy dispersive X-ray spectroscopy (EDX). The TEM images of prepared materials showed that the nanocomposites were 1-30 nm in size with spherical nanoparticles embedded on the surface of GO and CNT. This synthetic route is easy and rapid for preparing a variety of nanocomposites. The method avoids use of toxic chemicals, and the prepared nanocomposites can be used for biosensor, fuel cell, and biomedical applications.

Abstract: The method of laser treating an alumina surface includes applying a coating of a phenolic resin including particles of titanium carbide (TiC) and boron carbide (B4C) to an alumina (Al2O3) surface to form a resin-coated alumina surface, heating the resin-coated alumina surface to form a carbon-coated alumina surface, and scanning the carbon-coated alumina surface a nitrogen gas-assisted CO2 laser beam to form a laser-treated surface. The particles of titanium carbide (TiC) and boron carbide (B4C) each have a diameter of about 350 nm.

Abstract: A water electrolysis system decomposes an aqueous electrolyte solution into hydrogen and oxygen using light. The water electrolysis system includes a plurality of photoelectric conversion units that have at least one photoelectric conversion element and receive light to generate electrical energy, and a plurality of electrolyte cells in which hydrogen gas and oxygen gas are generated by electrolyzing the aqueous electrolyte solution using the electrical energy obtained by the photoelectric conversion units. The photoelectric conversion units and the electrolyte cells are electrically connected in series. The electrolyte cells are arranged between the photoelectric conversion units, and the photoelectric conversion units or the electrolyte cells located at respective ends in an arrangement state are electrically connected together.

Abstract: Provided is an artificial-photosynthesis module, which decomposes an aqueous electrolyte solution into hydrogen and oxygen by means of light, including a photoelectric conversion unit that receives light to generate electrical energy; a hydrogen gas generating part that decomposes the aqueous electrolyte solution, using the electrical energy of the photoelectric conversion unit, and generates hydrogen gas; and an oxygen gas generating part that decomposes the aqueous electrolyte solution, using the electrical energy of the photoelectric conversion unit, and generates oxygen gas. The photoelectric conversion unit, the hydrogen gas generating part, and the oxygen gas generating part are electrically connected in series, and the hydrogen gas generating part and the oxygen gas generating part are arranged within an electrolytic chamber to which the aqueous electrolyte solution is supplied. The hydrogen gas generating part has an inorganic semiconductor film having a pn junction.

Abstract: The present invention relates to a diaphragm type electrolytic cell and process of production of commercial quantities of hydrogen from the electrolysis of water. The utilization of both alkaline and acidic electrolyte solutions within the electrolytic cell assists to increase the production of hydrogen and oxygen. Additionally, the efficiency of the electrolytic cell is increased due to the elimination of unwanted side reactions.

Abstract: Provided is an artificial-photosynthesis array configured of artificial-photosynthesis modules which have been arranged in one or more rows and which receive light and decompose a supplied aqueous electrolyte solution to thereby obtain hydrogen gas and oxygen gas. The artificial-photosynthesis modules each includes an electrolytic chamber for hydrogen where hydrogen gas is generated and an electrolytic chamber for oxygen where oxygen gas is generated, the chambers being isolated from each other. The electrolytic chambers for hydrogen and electrolytic chambers for oxygen of the artificial-photosynthesis modules are alternately connected so that the electrolytic chamber for hydrogen of each artificial-photosynthesis module is connected to the electrolytic chamber for oxygen of another module and the electrolytic chamber for oxygen of each artificial-photosynthesis module is connected to the electrolytic chamber for hydrogen of another module.

Abstract: Disclosed herein are various layered, carbon-containing materials for use in reducing carbon dioxide. In certain embodiments, the materials comprise single wall carbon nanotubes (SWNTs).

Abstract: A system and process are disclosed for electrochemically upgrading bio-oils and bio-crudes that enhance yields of selected reduction products for subsequent production of bio-based fuels.

Abstract: The present disclosure relates to photoelectrochemical devices and systems for capturing the energy of electromagnetic radiation and utilizing the captured energy for electrolysis to produce hydrogen gas and oxygen gas.

Abstract: An electrolysis stack for an electyrolyzer is electrically subdivided into a plurality of segments, each segment including a specific number of electrolysis cells. The electrolysis stack further has switches adapted for electrically short circuiting the segments of the electrolysis stack.

Abstract: The present invention relates generally to a colloidal silver generator and more specifically to an ultrasonic nano silver generator that generates nano size silver particles, with a range of 1 nm to 100 nm in size, using ultrasound under electrolysis. By improving the architectural efficiency, limiting particle aggregation and managing particle saturation, the present invention improves upon previous attempts of generating nano silver particles.

Abstract: The present invention provides a methodology of making lead foam by an electrochemical process in which non-conducting poly urethane foam was metalized using palladium chloride solution which was then coated with lead using the plating bath containing fluoboric acid, Lead as fluoborate solutions, boric acid and urea. The process was operated at a current density ranging from 0.5 A/dm2 to 5 A/dm2, bath pH from 0.5 to 2.0, at temperature range from 30° C. to 50° C., followed with suitable post plating treatments. The surface morphology of the lead foam thus obtained was studied. The composition and purity of the lead foam was characterized with XRD. The porosity obtained depends upon the rate of deposition. The average value of the porosity realized in the range 86-79% with respect to time of deposition 2-6 h and the corresponding thickness of 45 to 60 micron.

Abstract: In electrolytic copper plating, an aqueous composition comprising a source of copper ions and at least one alkylene or polyalkylene glycol monoether which is soluble in the aqueous phase and has molecular weight not greater than about 500 for improving the efficacy of other additives such as, for example, levelers and suppressors; and a related plating method.

Abstract: In a method for improving the weldability of high-manganese-containing steel strips which contain (in % by weight) from 6 to 30% of manganese, up to 1% of carbon, up to 15% of aluminum, up to 6% of silicon, up to 6.5% of chromium, up to 4% of copper and also total additions of titanium and zirconium of up to 0.7% and total additions of niobium and vanadium of up to 0.5%, balance iron including unavoidable steel-accompanying elements the steel strips are coated with a zinc-containing corrosion protection layer.

Abstract: There is provided a silver-plated product which has good thermal resistance, bendability and wear resistance. In a silver-plated product wherein a surface layer of silver having a thickness of 10 ?m or less is formed on a base material of copper or a copper alloy, the full-width at half maximum of a rocking curve on a preferred orientation plane (preferably {200} or {111} plane) of the surface layer is caused to be 2 to 8°, preferably 3 to 7°, to improve the out-of-plane orientation of the surface layer to improve the thermal resistance, bendability and wear resistance of the silver-plated product.

Abstract: A plating apparatus includes a processing bath configured to store a processing liquid therein, a transporter configured to immerse a substrate holder, holding a substrate, in the processing liquid, raise the substrate holder out of the processing bath, and transport the substrate holder in a horizontal direction, and a gas flow generator configured to generate a clean gas flow forward of the substrate with respect to a direction in which the substrate holder is transported. The transporter moves the gas flow generator together with the substrate holder in the horizontal direction while transporting the substrate holder in the horizontal direction.

Abstract: Disclosed are pre-wetting apparatus designs and methods. In some embodiments, a pre-wetting apparatus includes a degasser, a process chamber, and a controller. The process chamber includes a wafer holder configured to hold a wafer substrate, a vacuum port configured to allow formation of a subatmospheric pressure in the process chamber, and a fluid inlet coupled to the degasser and configured to deliver a degassed pre-wetting fluid onto the wafer substrate at a velocity of at least about 7 meters per second whereby particles on the wafer substrate are dislodged and at a flow rate whereby dislodged particles are removed from the wafer substrate. The controller includes program instructions for forming a wetting layer on the wafer substrate in the process chamber by contacting the wafer substrate with the degassed pre-wetting fluid admitted through the fluid inlet at a flow rate of at least about 0.4 liters per minute.

Abstract: Methods, systems, and apparatuses for nanowire deposition are provided. A deposition system includes an enclosed flow channel, an inlet port, and an electrical signal source. The inlet port provides a suspension that includes nanowires into the channel. The electrical signal source is coupled to an electrode pair in the channel to generate an electric field to associate at least one nanowire from the suspension with the electrode pair. The deposition system may include various further features, including being configured to receive multiple solution types, having various electrode geometries, having a rotatable flow channel, having additional electrical conductors, and further aspects.

Abstract: An electrochemical reactor includes an adjustable electric field shaping capability during electroplating. The electrochemical reactor includes a reservoir configured to retain an electrolytic solution; a cathode and an anode disposed in the reservoir to form electric field lines passing through the electrolytic solution. Either the cathode or the anode includes a workpiece holder. A shield attaches to the cathode or the anode without the workpiece holder. The shield includes a surface configured to block a portion of the electric field lines, and a conduit positioned on the surface and configured to concentrate the electric field lines within the conduit. The conduit includes a protruding portion including a height measured from the surface to a top surface of the conduit, and an aperture penetrating the protruding portion and passing through the surface. The aperture is configured to allow the electric field lines to pass through the conduit.

Abstract: The planchet holder for electrodeposition of materials includes a container cover configured to securely fit over the mouth of a beaker. An elongate suspension post passes through a through-hole in the cover a predetermined distance, and a holder assembly is coupled to the suspension post to be suspended within the beaker at a select height from the bottom of the beaker. A planchet receptacle extends axially from a body of the holder assembly, and a substrate recess is formed at a distal end of the planchet receptacle for selective placement of a planchet. An endcap is secured onto the planchet receptacle to securely capture the planchet, and a port in the endcap exposes one face of the planchet for electrodeposition of a material. The planchet holder holds the planchet stationary within the beaker and exposes only one face for electrodeposition and subsequent analysis, thereby reducing time and costs.

Abstract: Embodiments of the present invention relate to a furnace system for growing crystals. The furnace system comprises a crucible for growing a crystal and a furnace comprising a housing having an inner volume. The housing comprises a through hole connecting the inner volume with an environment of the housing. An insulation plug is movably insertable into the through hole for controlling a heat extraction out of the crucible by radiation, wherein the insulation plug is free of a force transmitting contact with the crucible.

Abstract: An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an optional weir surrounding the crystal. The low aspect ratio crucible substantially eliminates convection currents and reduces oxygen content in a finished single crystal silicon ingot. A separate level controlled silicon pre-melting chamber provides a continuous source of molten silicon to the growth crucible advantageously eliminating the need for vertical travel and a crucible raising system during the crystal pulling process. A plurality of heaters beneath the crucible establish corresponding thermal zones across the melt. Thermal output of the heaters is individually controlled for providing an optimal thermal distribution across the melt and at the crystal/melt interface for improved crystal growth. Multiple crystal pulling chambers are provided for continuous processing and high throughput.

Abstract: Chamber components for an epitaxial growth apparatus are disclosed. A reaction chamber defined and formed by a ceiling plate. A reactant gas is rectified in a reactant gas supply path disposed in the side wall, so that a horizontal component in a flow direction of the reactant gas in the reaction chamber corresponds to a horizontal component in a direction extending from the center of an opening of the reactant gas supply path. Improvements to the upper side wall, susceptor and rectification plate of the epitaxial growth apparatus have resulted in improvements to the uniformity and formation speed of the epitaxial layer formed on substrates resulting in higher throughput and lower defects.

Abstract: Chamber components for an epitaxial growth apparatus are disclosed. A reaction chamber defined and formed by a ceiling plate. A reactant gas is rectified in a reactant gas supply path disposed in the side wall, so that a horizontal component in a flow direction of the reactant gas in the reaction chamber corresponds to a horizontal component in a direction extending from the center of an opening of the reactant gas supply path. Improvements to the upper side wall, susceptor and rectification plate of the epitaxial growth apparatus have resulted in improvements to the uniformity and formation speed of the epitaxial layer formed on substrates resulting in higher throughput and lower defects.

Abstract: Chamber components for an epitaxial growth apparatus are disclosed. A reaction chamber defined and formed by a ceiling plate. A reactant gas is rectified in a reactant gas supply path disposed in the side wall, so that a horizontal component in a flow direction of the reactant gas in the reaction chamber corresponds to a horizontal component in a direction extending from the center of an opening of the reactant gas supply path. Improvements to the upper side wall, susceptor and rectification plate of the epitaxial growth apparatus have resulted in improvements to the uniformity and formation speed of the epitaxial layer formed on substrates resulting in higher throughput and lower defects.

Abstract: The present invention relates to method of preparing a monocrystalline diamond abrasive grain comprising the steps of: sufficiently dispersing a micron-scale monocrystalline diamond and at least a micron-scale metal powder in a sol containing at least a nano-scale metal powder, and controlling the suitable ratio of the two kinds of metal powder with different order of magnitude of particle size, accordingly the micron-scale metal powder can be stuffed into voids among the monocrystalline diamond grains, and only a suitable amount of nano-scale metal powder is required to let the micron-scale metal powder and nano-scale metal powder coat together on the surface of the micron-scale diamond to form an integral and uniform coating layer including at least two kinds of metal grains, thus the resulting monocrystalline diamond abrasive grains have a unique rough-surface morphology, a plurality of contact points and contact surfaces resenting in the grinding process and good self-sharpening.

Abstract: The present invention is directed to a method and a system for the production of at least one polymeric yarn comprising means for mixing a polymer (1) with a first solvent yielding a mixture; means for homogenizing the mixture; means for rendering the mixture inert (21, 22, 23); means for dipping the mixture into a quenching bath (30), wherein an air gap is maintained before the mixture reaches the quenching bath (30) liquid surface forming at least one polymeric yarn; means for drawing (41) the at least one polymeric yarn at least once; means for washing (5) the at least one polymeric yarn with a second solvent that is more volatile than the first solvent; means for heating the at least one polymeric yarn (6); means for drawing at room temperature (7) the at least one polymeric yarn at least once; and means for heat drawing (8) the at least one polymeric yarn at least once.

Abstract: Disclosed herein are nanofibrillar materials and aerogel-like materials comprised of nanofibrils, and methods for making such materials.

Abstract: A thermoplastic filament comprising multiple polymers of differing flow temperatures in a regular geometric arrangement, and a method for producing such a filament, are described. Because of the difference in flow temperatures, there exists a temperature range at which one polymer is mechanically stable while the other is flowable. This property is extremely useful for creating thermoplastic monofilament feedstock for three-dimensionally printed parts, wherein the mechanically stable polymer enables geometric stability while the flowable polymer can fill gaps and provide strong bonding and homogenization between deposited material lines and layers. These multimaterial filaments can be produced via thermal drawing from a thermoplastic preform, which itself can be three-dimensionally printed. Furthermore, the preform can be printed with precisely controlled and complex geometries, enabling the creation of monofilament and fiber with unique decorative or functional properties.

Abstract: The present disclosure provides methods related to infiltration of aircraft brake discs with titanium-containing compounds. In various embodiments, a method of making a self-coating carbon/carbon composite member may comprise infiltrating a carbonized fiber preform with a titanium-containing compound, drying the carbonized fiber preform, annealing the carbonized fiber preform at a third temperature, and densifying the carbonized fiber preform.

Abstract: A manufacturing method for high tenacity reflective yarn, comprising the steps of providing a plurality of high tenacity yarns to a processing apparatus, introducing first and second reflective films to the upper part and the lower part of the high tenacity reflective yarns, respectively heating in a first and a second oven to melt the viscose of the first and second reflective films, firmly transferring in the surface of the high tenacity yarns, and then rolled up the release paper from the high tenacity yarns to become the tenacity reflective yarns.

Abstract: A woven shielding textile includes a set of weft yarns and a plurality of warp yarns, including a set of primary warp yarns and a set of secondary warp yarns. The set of primary warp yarns and the set of secondary warp yarns are selectively interlaced with the set of weft yarns using a double beam weaving system such that the woven shielding textile is warp-faced. A face surface is predominantly composed of the set of primary warp yarns and a back surface is predominantly composed of the set of secondary warp yarns, while the plurality of warp yarns alternates between the set of primary warp yarns and the set of secondary warp yarns. A substantial percent of light incident to the woven shielding textile does not pass through.

Abstract: The invention relates to a multi-layer woven fabric and a composite panel incorporating the woven fabric, wherein the multi-layer woven fabric comprises an upper woven layer, a lower woven layer, and a plurality of securing yarns securing the upper and lower woven layers together, and wherein a resin covers and penetrates into at least one of the layers.

Abstract: The present disclosure relates to a ballistic resistant composite 20 including a bimodal binder, the composite formable in a manner in which it is exposed to low pressure for a short duration of time and at a controlled temperature. More particularly, the bimodal binder of composite 20 allows the composite to be formed with a flat-bed laminator, for example, which may be less expensive than other processing methods, such as a steel belt press.