Abstract: A method of attributing contribution to a creation of time-constrained video content, includes: identifying a combination of content included in a time-constrained video created by a first creator, the combination of content including a plurality of items of content including at least a first item of content created by a second creator; determining an identification of the first creator and an identification of the second creator; associating the identification of the first creator and an identification of the second creator with the time-constrained video; and displaying the identification of the first creator and the identification of the second creator when the time-constrained video is displayed.

Abstract: A video input unit inputs case video data to be processed, a face detector detects a face region of a person included in an image of video data, a target manager registers the face region as a region to be masked, an operation input inputs a user's instruction regarding the face region, a target manager excludes a region designated by the user's instruction from targets to be masked and registers the region as a region not to be masked, an image processor performs a masking process on the region to be masked, and a video output unit outputs video data having been subjected to image processing including the masking process.

Abstract: The invention is provided with: an acquisition unit that acquires, from an external machine, image data as well as time data when an image based on the image data has been displayed on the external machine; a data memory unit that stores, for each unit of the image data, the image data and the time data acquired in the acquisition unit; and a prioritization determination unit that determines, on the basis of the time data, a prioritization of the image data stored in the data memory unit.

Abstract: To allow a better coordination between an image creation artist such as a movie director of photography and the final viewer, via a receiving-side display and its corresponding image processing, a method of adding display rendering specification information to an input image signal (I) comprises determining descriptive data (D) that includes at least identification information for at least one luminance regime subset of pixels of an input image; and encoding the descriptive data (D) into an output description data signal (DDO), relatable to an output image signal (O) based upon an input image signal (I), of the descriptive data (D) in a technical format standardized to be intended for use by a receiving-side display to control its image processing for changing the color properties of its rendered images.

Abstract: There is provided an information processing device including: a data processing unit configured to execute a playback process of playing back data recorded on disc. The data processing unit acquires a playback control information file corresponding to playback data recorded on disc, acquires a plurality of video information corresponding to a plurality of video data in a same playback segment from the acquired playback control information file, and applies the acquired plurality of video information to execute a decoding and playback process of decoding and playing back the plurality of video data in the same playback segment.

Abstract: An interface apparatus for designating a link destination, is provided with: a range designating device (110) for designating a desired range in a screen on which motion picture content is reproduced; a range mark setting device (107b) for superimposing and displaying a range mark indicating the designated range on the motion picture content; a movement operating device (110, 105, 107b) for moving the range mark in a desired direction, along with a lapse of reproduction time of the motion picture content in the screen; a link destination inputting device (110) for inputting link destination identification information as what corresponds to the range mark; and a holding device (106) for holding position information indicating a position of the range mark, in association with the link destination identification information and each time point in the reproduction time.

Abstract: The present disclosure proposes a method of synchronously playing media file. The method includes: receiving, with a mobile terminal, parameter information from a playing device, the parameter information including a current playing progress and a total time length of a current playing media file; starting to count time, with the mobile terminal, upon receiving the parameter information and calculating, with the mobile terminal, a real-time playing progress of the media file based on a predetermined time interval according to the parameter information and timing information; displaying, with the mobile terminal, the real-time playing progress on a display interface. The present disclosure solves unstable data transmission and enhances the accuracy of displaying progress of the playing device.

Abstract: Hard disk drives of the invention are wrapped in wraps for enhanced sealing of the hard disk drive. Wrapped hard disk drives of the invention comprise: an enclosed hard disk drive housing comprising a base and a cover enclosed around internal components for facilitating reading and recording of data at a desired location on at least one disk contained within the housing; and a wrap wrapped and metallically sealed around the enclosed hard disk drive housing in an at least partially overlapping manner to form the wrapped hard disk drive and prevent undesired migration therethrough such that a sealed environment exists within the wrapped hard disk drive.

Abstract: To stably control a threshold voltage of a functional circuit using an oxide semiconductor. A variable bias circuit, a monitoring oxide semiconductor transistor including a back gate, a current source, a differential amplifier, a reference voltage source, and a functional circuit which includes an oxide semiconductor transistor including a back gate are provided. The current source supplies current between a source and a drain of the monitoring oxide semiconductor transistor to generate a gate-source voltage in accordance with the current. The differential amplifier compares the voltage with a voltage of the reference voltage source, amplifies a difference, and outputs a resulting voltage to the variable bias circuit. The variable bias circuit is controlled by an output of the differential amplifier and supplies voltage to the back gate of the monitoring oxide semiconductor transistor and the back gate of the oxide semiconductor transistor included in the functional circuit.

Abstract: A method and an apparatus for controlling current in an array cell is disclosed. The method includes applying a supply voltage to a first access point of a transistor, precharging a second access point of the transistor to a predetermined voltage, applying a control voltage to a third access point of the transistor, and discharging the second access point of the transistor to turn on the transistor which causes a current flow through the array cell connected to the transistor.

Abstract: Row activation operations within a memory component are carried out with respect to subrows instead of complete storage rows to reduce power consumption. Further, instead of activating subrows in response to row commands, subrow activation operations are deferred until receipt of column commands that specify the column operation to be performed and the subrow to be activated.

Abstract: Methods and memory systems are provided that can detect bit errors due to read disturbances. A main page of a flash memory in a memory system is read. A bit error in data that is read from the main page is detected and corrected. In parallel with reading the main page, a bit error is detected in data that is read from a dummy page of the flash memory.

Abstract: Embodiments of the present invention include an apparatus, method, and system for integrating data processing logic with memory. An embodiment of a memory integrated circuit is designed to execute a task on the data in a memory array within a memory integrated circuit. The memory integrated circuit can include a memory array, a data access component, a data holding component, and a logic component. The data access component can be coupled to the memory array and configured to provide an address to the memory array. The data holding component can be coupled to the memory array and configured to temporarily store the data in the memory array located at the address. The logic component can be coupled to both the data access component and the data holding component, and be configured to execute a task using data received from the data holding component. The logic component can include combinational or sequential logic.

Abstract: Systems and methods are provided herein for implementing a programmable integrated circuit device that enables high-speed FPGA boot-up through a significant reduction of configuration time. By enabling high-speed FPGA boot-up, the programmable integrated circuit device will be able to accommodate applications that require faster boot-up time than conventional programmable integrated circuit devices are able to accommodate. In order to enable high-speed boot-up, dedicated address registers are implemented for each data line segment of a data line, which in turn significantly reduces configuration random access memory (CRAM) write time (e.g., by a factor of at least two).

Abstract: A circuit for control of time for read operation is disclosed which additionally incorporates a dummy device circuit and a dummy sensitive amplifier circuit, uses a current mirror circuit to mirror a reference current in a reference device circuit into the dummy device circuit to generate a mirrored current, and generates time control signals based on the mirrored current. Due to the same adaptation of the mirrored current to the size of a test device as the reference current, the time control signals are also adapted to the size of the test device. This addresses the problem of fixed time control signals arising from the use of a conventional RC relay circuit and enables the time control signals to change with the size of the test device as well as Process Voltage Temperature, thereby resulting in an effective reduction in average energy consumed in read operation.

Abstract: A semiconductor apparatus may include: a data storage group including first to eight data storage areas; a first channel select pad configured to transmit a first channel select signal to the first and third data storage areas; a second channel select pad configured to transmit a second channel select signal to the second and fourth data storage areas; a third channel select pad configured to transmit the first channel select signal to the sixth and eighth data storage areas; a fourth channel select pad configured to transmit the second channel select signal to the fifth and seventh data storage areas; a first clock enable pad configured to transmit a first clock enable signal to the first and third data storage areas; a second clock enable pad configured to transmit a second clock enable signal to the second and fourth data storage areas; a third clock enable pad configured to transmit the first clock enable signal to the fifth and seventh data storage areas; and a fourth clock enable pad configured to trans

Abstract: Self-referenced reading of a memory cell in a memory includes first applying a read voltage across the memory cell to produce a sample voltage. After applying the read voltage, a write current is applied to the memory cell to write a first state to the memory cell. After applying the write current, the read voltage is reapplied across the memory cell. An offset current is also applied while the read voltage is reapplied, and the resulting evaluation voltage from reapplying the read voltage with the offset current is compared with the sample voltage to determine the state of the memory cell.

Abstract: A semiconductor device may include a power control signal generator and a sense amplifier circuit. The power control signal generator may generate a first power control signal, an enablement moment of the first power control signal controlled according to a logic level combination of temperature code signals in response to a mode signal. The sense amplifier circuit may generate a first power signal driven in response to the first power control signal and may generate a second power signal driven in response to a second power control signal. The sense amplifier circuit may sense and amplify a level of a bit line using the first power signal and the second power signal.

Abstract: During a command/address calibration mode, a memory controller may transmit multiple cycles of test patterns as signals to a memory device. Each cycle of test pattern signals may be transmitted at an adjusted relative phase with respect to a clock also transmitted to the memory device. The memory device may input the test pattern signals at a timing determined by the clock, such as rising and/or falling edges of the clock. The test pattern as input by the memory device may be sent to the memory controller to determine if the test pattern was successfully transmitted to the memory device during the cycle. Multiple cycles of test pattern transmissions are evaluated to determine a relative phase of command/address signals with respect to the clock for transmission during operation of the system.

Abstract: A sense amplifier includes an equalization unit configured to precharge a pair of bit lines to a level of a bit line precharge voltage in response to a bit line equalizing signal; and an amplification unit configured to sense and amplify voltages of the pair of bit lines, supply, during an active operation, a ground voltage to a pull-down node of a latch section, and supply, when a precharge signal is enabled, a first voltage lower than the ground voltage to the pull-down node of the latch section for a predetermined time.

Abstract: A dynamic Random Access Memory (DRAM) module (105) is disclosed. The DRAM module (105) can includes a plurality of banks (205-1, 205-2, 205-3, 205-4) to store data and a refresh engine (115) that can be used to refresh one of the plurality of banks (205-1, 205-2, 205-3, 205-4). The DRAM module (105) can also include a Smart Refresh Component (305) that can advise the refresh engine (115) which bank to refresh using an out-of-order per-bank refresh. The Smart Refresh Component (305) can use a logic (415) to identify a farthest bank in the pending transactions in the transaction queue (430) at the time of refresh.

Abstract: A system and method of refreshing dynamic random access memory (DRAM) are disclosed. A device includes a DRAM, a bus, and a system-on-chip (SOC) coupled via the bus to the DRAM. The SOC is configured to refresh the DRAM at a particular refresh rate based on a temperature of the DRAM and based on calibration data determined based on one or more calibration tests performed while the SOC is coupled to the DRAM.

Abstract: In one embodiment, an integrated circuit includes at least one logic circuit supplied by a first supply voltage and at least one memory circuit coupled to the logic circuit and supplied by a second supply voltage. The memory circuit is configured to be read and written responsive to the logic circuit even if the first supply voltage is less than the second supply voltage during use. In another embodiment, a method includes a logic circuit reading a memory cell, the logic circuit supplied by a first supply voltage; and the memory cell responding to the read using signals that are referenced to the first supply voltage, wherein the memory cell is supplied with a second supply voltage that is greater than the first supply voltage during use.

Abstract: Methods of operating a memory include applying a multi-step pass voltage to a plurality of memory cells selected for a programming operation, applying a programming pulse to the plurality of memory cells selected for the programming operation after applying a voltage level of a particular step of the multi-step pass voltage to the plurality of memory cells selected for the programming operation, applying a particular voltage level to any data lines coupled to a first subset of memory cells of the plurality of memory cells selected for the programming operation prior to applying a voltage level of a certain step of the multi-step pass voltage, and applying the particular voltage level to any data lines coupled to a second subset of memory cells of the plurality of memory cells selected for the programming operation only after applying the voltage level of the certain step of the multi-step pass voltage.

Abstract: An array of programmable non-volatile devices, such as a nominal OTP cell, is operated such that a Vt representing a particular binary logic state is changed over time. This allows for re-programming and emulating a few times or multi-time programmable device.

Abstract: An array of programmable non-volatile devices, such as a nominal OTP cell, is operated such that a Vt representing a particular binary logic state is changed over time. This allows for re-programming and emulating a few times or multi-time programmable device.

Abstract: An electronic device includes a semiconductor memory unit, which includes resistive memory cells; an access circuit to apply, during a write operation, a write voltage across a selected one of the resistive memory cells in a first or second direction; first switching units, each of which is disposed between the access circuit and a first end of a corresponding one of the resistive memory cells and turned on in response to a first voltage having a level higher than a predetermined level when the corresponding resistive memory cell is selected during the write operation; and second switching units, each of which is disposed between the access circuit and a second end of the corresponding resistive memory cell and turned on in response to a second voltage having a level equal to or lower than the predetermined level when the corresponding resistive memory cell is selected during the write operation.

Abstract: Apparatuses, memories, and methods for decoding memory addresses for selecting access lines in a memory are disclosed. An example apparatus includes an address decoder circuit coupled to first and second select lines, a polarity line, and an access line. The first select line is configured to provide a first voltage, the second select line is configured to provide a second voltage, and the polarity line is configured to provide a polarity signal. The address decoder circuit is configured to receive address information and further configured to couple the access line to the first select line responsive to the address information having a combination of logic levels and the polarity signal having a first logic level and further configured to couple the access line to the second select line responsive to the address information having the combination of logic levels and the polarity signal having a second logic level.

Abstract: A method for programming a memory device comprises the following steps: performing an interleaving programming, including: programming a first memory cell during a first time interval and correspondingly verifying the first memory cell during a second time interval; programming a second memory cell during a third time interval and correspondingly verifying the second memory cell during a fourth time interval between the first and second time intervals; and inserting at least one dummy cycle between the first and second time intervals to ensure that a resistance change per unit of time of the first memory cell is less than a threshold.

Abstract: A memory circuit with blocking states. In one embodiment, the memory circuit includes a two non-volatile transistors connected in series. The input state of the memory cell and the stored state of the memory cell are configured to be a plurality of states including a zero state, a one state, a no care state, and an input blocking state. When the input state of the memory cell is the blocking state, the memory cell is configured to be in a blocking mode unless the stored state of the memory cell is the no care state. When the stored state of the memory cell is the blocking state, the memory cell is configured to be in the blocking mode unless the input state of the memory cell is the no care state.

Abstract: A non-volatile memory has an array of non-volatile memory cells. Each of the non-volatile memory cells includes a coupling device formed on a first well, a read device, a floating gate device formed on a second well and coupled to the coupling device, a program device formed on the second well, and an erase device formed on a third well and coupled to the first floating gate device. The read device, the program device, and the erase device are formed on separate wells so as to separate the cycling counts of a read operation, a program operation and an erase operation of the non-volatile memory cell.

Abstract: In a method of programming a nonvolatile memory device, a program operation is performed on a selected memory cell coupled to a selected word line in response to a program command, a negative bias voltage is applied to the selected word line, a verification pass voltage is applied to an unselected word line after the negative bias voltage is applied to the selected word line, and a first program verification voltage, which is higher than the negative bias voltage and lower than a ground voltage, is applied to the selected word line.

Abstract: A method includes, in a plurality of memory cells that share a common isolation layer and store in the common isolation layer quantities of electrical charge representative of data values, assigning a first group of the memory cells for data storage, and assigning a second group of the memory cells for protecting the electrical charge stored in the first group from retention drift. Data is stored in the memory cells of the first group. Protective quantities of the electrical charge that protect from the retention drift in the memory cells of the first group are stored in the memory cells of the second group.

Abstract: Provided are semiconductor devices including a peripheral region and a cell region stacked thereon and a method of fabricating the same. The semiconductor device may include a peripheral region including a lower substrate and a peripheral circuit provided thereon and a cell region including an upper substrate and a cell array provided thereon. The cell region may be stacked on the peripheral region. When an operation signal is applied to the cell region from the peripheral region, at least a portion of the peripheral and cell regions may be used as a ground pattern applied with a ground signal, thereby being in an electrical ground state.

Abstract: Methods of operating a nonvolatile memory device include performing erase loops on a memory block using a first voltage, performing program loops on memory cells of the memory block using a second voltage, and increasing the first and second voltages based on program/erase cycle information for the memory cells. The first voltage may include an erase verification voltage and the second voltage may include a program voltage.

Abstract: A memory circuit includes an array subdivided into multiple divisions, each connectable to a corresponding set of access circuitry. A serializer/deserializer circuit is connected to a data bus and the access circuitry to convert data between a (word-wise) serial format on the bus and (multi-word) parallel format for the access circuitry. Column redundancy circuitry is connect to the serializer/deserializer circuit to provide defective column information about the array. In converting data from a serial to a parallel format, the serializer/deserializer circuit skips words of the data in the parallel format based on the defective column information indicating that the location corresponds to a defective column. In converting data from a parallel to a serial format the serializer/deserializer circuit skips words of the data in the parallel format based on the defective column information indicating that the location corresponds to a defective column.

Abstract: A method controlling the execution of a reliability verification operation in a storage device including a nonvolatile memory device includes; determining whether a read count for a designated unit within the nonvolatile memory device exceeds a count value limit, and upon determining that the read count exceeds the count value limit, executing the reliability verification operation directed to the designated unit, wherein the count value limit is based on at least one of read count information, page bitmap information and environment information stored in the storage device.

Abstract: Methods and apparatuses are contemplated herein for enhancing the read performance and data retention of nonvolatile memory devices. In an example embodiment, a method is provided for controlling a nonvolatile memory device that includes a matrix of memory cells, wherein each memory cell in the matrix includes a programmable floating gate. The method includes programming a floating gate of a first memory cell of the nonvolatile memory device, and shifting a voltage of the floating gate of the first memory cell of the nonvolatile memory device by creating a coupling effect that impacts the floating gate of the first memory cell. In this regard, the method may include programming one or more nearby memory cells, in which case the coupling effect may comprise a floating gate coupling effect between the first memory cell and the one or more nearby memory cells.

Abstract: A SONOS byte-erasable EEPROM is disclosed. In one aspect, an apparatus includes a plurality of SONOS memory cells forming an EEPROM memory array. The apparatus also includes a controller that generates bias voltages to program and erase the memory cells. The controller performs a refresh operation when programming selected memory cells to reduce write-disturb on unselected memory cells to prevent data loss.

Abstract: According to one embodiment, a semiconductor memory device includes: first and second memory cells; first and second word lines coupled to the first and second memory cells, respectively. When data is read from the first memory cell, first and second voltages are applied to the first word line. A voltage of the second word line varies continuously by a first potential difference with time while the first voltage is applied to the first word line, and the voltage of the first word line varies continuously by a second potential difference with time while the second voltage is applied to the first word line.

Abstract: A semiconductor device may include: a control block suitable for generating a boot-up select signal in response to a boot-up mode signal and a fuse select signal; and a fuse block suitable for performing a program operation of rupturing one or more first fuse cells among a plurality of fuse cells in response to the fuse select signal, and performing a boot-up operation on a partial fuse region including the one or more first fuse cells in response to the boot-up select signal.

Abstract: A memory cell of the one-time-programmable type is programmed by application of a programming voltage having a value sufficient to obtain a breakdown of a dielectric of a capacitor within the cell. A programming circuit generates the programming voltage as a variable voltage that varies as a function of a temperature (T) of the cell. In particular, the programming voltage varies based on a variation law decreasing as a function of the temperature.

Abstract: The present invention provides a shift register, a gate driving circuit and a display device. The shift register comprises an input unit, an output pull-up unit, a reset unit and an output maintaining unit, the input unit is connected with a signal input terminal, the reset unit and a pull-up control node, and the pull-up control node is a connection node between the input unit and the output pull-up unit; the output pull-up unit is connected with a first signal output terminal, a second signal output terminal, a first clock signal input terminal, the reset unit and the pull-up control node; the reset unit is connected with a reset signal input terminal, a low voltage power supply terminal, the input unit and the output pull-up unit; the output maintaining unit is connected with the first clock signal input terminal, the first signal output terminal and a control signal input terminal.

Abstract: A display device including a bidirectional shift register circuit, including: a plurality of cascade-connected register circuits; various circuits for setting various nodes to various voltage levels responsive to various signals input to various terminals; and an output circuit which outputs the clock pulse as an output pulse when the voltage of the first node is high level, wherein, at the forward shift operation, the bottom dummy register circuit is not input the reset signal and the first node of the bottom dummy register circuit is reset if the initial reset circuit of the bottom dummy register circuit receives the backward trigger signal, and wherein, at the backward shift operation, the top dummy register circuit is not input the reset signal and the first node of the top dummy register circuit is reset if the initial reset circuit of the top dummy register circuit receives the forward trigger signal.

Abstract: Embodiments of the present disclosure provide an apparatus for testing a storage network comprising a processor configured to generate a configuration signal in response to a test request; and a tester coupled to the processor and configured to, by the configuration signal, operate under different operation modes so as to test different to-be-tested objects in the storage network. The test request indicates an operation mode of the tester, wherein various types of to-be-tested objects in a storage network can be tested by one test device, at a low test cost and with more convenient operations.

Abstract: A built-in self-test circuit includes a command storage unit that stores commands inputted from an external device, an input/output control unit that controls the command storage unit to sequentially store the commands and sequentially output stored commands as internal commands in a test operation, and a command decoder unit that decodes the internal commands outputted from the command storage unit and outputs a test command.

Abstract: A memory having a redundancy area is operated in a normal mode and an error is detected. A selecting selects between in-line repair process and off-line repair. In-line repair applies a short term error correction, which remaps a fail address to a remapped memory area of the memory. An in-system repair is applied, for a one-time programmed remapping of the fail address to a redundancy area of the memory. In-system repair utilizes idle time of the memory to maintain valid memory content.

Abstract: Described here in are systems, methods and, software to verify storage media and storage subsystems upon deployment. In one example, a computer apparatus to test storage media in a storage subsystem includes processing instructions that direct a computing system to identify initiation of a storage subsystem, initiate a testing process of the storage media, and identify a partition availability event for the storage media. The processing instructions also direct the computing system to, in response to the partition availability event, make a partition of the storage media available to a host processing system, wherein the partition comprises storage locations in the storage media tested via the testing process, and continue the testing process on the storage media. The computer apparatus also includes one or more non-transitory computer readable media that store the processing instructions.

Abstract: Apparatus and methods for hybrid post package repair are disclosed. One such apparatus may include a package including memory cells and volatile memory. The volatile memory may be configured to store defective address data corresponding to a first portion of the memory cells that are deemed defective post-packaging. The apparatus may also include a decoder configured to select a second portion of the memory cells instead of the first portion of the memory cells when received current address data corresponding to an address to be accessed matches the defective address data stored in the volatile memory. The apparatus may also include non-volatile memory in the package. The apparatus may also include a mapping logic circuit in the package. The mapping logic circuit may be configured to program the replacement address data to the non-volatile memory subsequent to the defective address data being stored to the volatile memory.

Abstract: A display device has a scale in the shape of a circular arc. On an axis driving an indicator axis, a rotatably mounted gear wheel is arranged in a rotatably fixed manner, in the teeth of which the toothing of a wobble gear ring partially engages. The wobble gear ring is mounted about the axis of the rotatably mounted gear wheel such that the wobble gear ring can wobble, is acted upon by spring forces distributed around the periphery of the wobble gear ring in the direction of engagement of the toothing of the wobble gear ring in the teeth of the rotatably mounted gear wheel, and is fixedly connected to a ferromagnetic ring extending in the direction of rotation of the wobble gear ring. At least two pole shoes project through independently energizable coils to the outer circumferential surface of the ferromagnetic ring.