Abstract: There is provided a method for forming a metal film on a target substrate having a complex-shaped portion and a flat portion, the target substrate being loaded into a chamber which is maintained under a depressurized atmosphere, by sequentially supplying a metal chloride gas as a raw material gas and a reduction gas for reducing a metal chloride into the chamber while purging the chamber in the course of sequentially supplying the metal chloride gas and the reduction gas, the method including: forming a first metal film by supplying the metal chloride gas at a relatively low flow rate; and forming a second metal film by supply the metal chloride gas at a relatively high flow rate.

Abstract: The invention relates to a compact thermal reactor for rapid growth of high quality carbon nanotubes (CNT2) produced by chemical process with low power consumption comprising: a processing chamber having a vacuum vessel, the vacuum vessel having a side cover formed of a first side wall and a second side wall, a top cover, a bottom cover connected to a support stand; feed through housing provided with a substrate; a heating system consisting of a heating element and back means; and at least one each inlet and outlet for gas injection into the process chamber for growing high quality carbon nanotubes over the substrate.

Abstract: A novel composite diamond film comprising of a relatively thick layer of UNCD (Ultrananocrystalline Diamond) with a Young's modulus of less than 900 GPa and an underlying relatively thin MCD (microcrystalline diamond) layer with a Young's modulus of greater than 900 GPa, has been shown to exhibit superior delamination resistance under extreme shear stress. It is hypothesized that this improvement is due to a combination of stress relief by the composite film with a slightly “softer” UNCD layer, a disruption of the fracture mechanism through the composite layer(s), and the near ideal chemical and thermal expansion coefficient match between the two diamond layers. The combination of a thick but “softer” underlying UNCD layer with a thin but harder overlying MCD layer provides an excellent compromise between the low deposition cost and smoothness of UNCD with the extreme hardness and unparalleled chemical, electrochemical and immunological inertness of even a thin layer of MCD.

Abstract: A film deposition apparatus, comprising: a deposition preventive plate which is located in a processing chamber performing film deposition processing on a substrate so as to surround a processing region in the processing chamber for processing on the substrate, and which prevents a film deposition material from being attached to an inner wall of the processing chamber, wherein the deposition preventive plate is configured by arranging a plurality of component plates of which respective end portions are overlapped with each other at a gap, such that a thermal expansion generated due to the film deposition processing is absorbed by a relative movement of an overlapped part in two adjacent component plates of the plurality of component plates in a width direction of the overlapped part, and a concave part is provided at the overlapped part to make the gap provided in a side communicating with the processing region be larger than that provided in the other side, thin parts provided in the respective end portions

Abstract: A film forming apparatus according to an embodiment comprises a film forming chamber. A first pipe part is connected to the film forming chamber and leads a discharge gas out of the film forming chamber. The first pipe part has a first opening area in a cross-section perpendicular to a moving direction of the discharge gas. A liquid discharger discharges a part of the discharge gas liquefied in the first pipe part. A second pipe part is provided between the first pipe part and the liquid discharger and has a second opening area smaller than the first opening area in a cross-section perpendicular to a moving direction of the discharge gas.

Abstract: To form a film by generating molecular species which can react at a low temperature, especially, 100° C. or less at which a substrate is not deformed or altered. In a heat beam heating device which instantaneously heats a source gas to a high temperature to cause the source gas to collide with a metal wall including a catalytic function, activated molecular species are generated by a nonequilibrium reaction, sprayed on, and brought into contact with a substrate to form a film.

Abstract: Embodiments described herein generally relate to a batch processing chamber. The batch processing chamber includes a lid, a chamber wall and a bottom that define a processing region. A cassette including a stack of susceptors for supporting substrates is disposed in the processing region. The edge of the cassette is coupled to a plurality of shafts and the shafts are coupled to a rotor. During operation, the rotor rotates the cassette to improve deposition uniformity. A heating element is disposed on the chamber wall and a plurality of gas inlets is disposed through the heating element on the chamber wall. Each gas inlet is substantially perpendicular to the chamber wall.

Abstract: A vapor deposition apparatus for depositing a thin film on a substrate, by which a deposition process is efficiently performed and deposition film characteristics are easily improved, and a vapor deposition apparatus including: a stage onto which a substrate is disposed; and a supply unit disposed to face the substrate and having a main body member and a nozzle member disposed on one surface of the main body member facing the substrate, to sequentially supply a plurality of gases towards the substrate, and a method of manufacturing an organic light-emitting display apparatus using the same.

Abstract: Showerheads for semiconductor processing equipment are disclosed that include various features designed to minimize or eliminate non-uniform gas delivery across the surface of a wafer due to gas flow transients within the showerhead.

Abstract: The present invention relates to a process for the generation of thin inorganic films on substrates, in particular an atomic layer deposition process. This process comprises bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, R4, R5, and R6 are independent of each other hydrogen, an alkyl group, or a trialkylsilyl group, n is an integer from 1 to 3, M is a metal or semimetal, 1 X is a ligand which coordinates M, and m is an integer from 0 to 4.

Abstract: Various implementations of hybrid ceramic faceplates for substrate processing showerheads are provided. The hybrid ceramic showerhead faceplates may include an electrode embedded within the ceramic material of the faceplate, as well as a pattern of through-holes. The electrode may be fully encapsulated within the ceramic material with respect to the through-holes. In some implementations, a heater element may also be embedded within the hybrid ceramic showerhead faceplate. A DC voltage source may be electrically connected with the hybrid ceramic showerhead faceplate during use. The hybrid ceramic faceplates may be easily removable from the substrate processing showerheads for easy cleaning and faceplate replacement.

Abstract: A method of electrolessly metal plating exposed copper or copper alloy on an article while preventing plating on areas other than the copper or copper alloy of the article to be plated. The method comprises the steps, in order, of a) immersing the article in a ruthenium based activator solution; b) immersing the article in a solution comprising one or more divalent sulfur compounds; and c) electrolessly plating the exposed copper or copper alloy on the article. The article may optionally be cleaned and/or microetched prior to being immersed in the ruthenium based activator solution. This pre treatment method eliminates extraneous plating on the article and reduces the initiation time for plating to begin on the copper or copper alloy during subsequent electroless plating.

Abstract: The present invention discloses a process for electroless plating of a metal or metal alloy onto copper features of an electronic device such as a printed circuit board which suppresses undesired skip plating and extraneous plating. The process comprises the steps i) providing such a substrate, ii) activating of the copper features with noble metal ions; iii) removing excessive noble metal ions or precipitates formed thereof with an aqueous pre-treatment composition comprising an acid, a source for halide ions and an additive selected from the group consisting of thiourea, thiourea derivatives and polymers comprising thiourea groups, and iv) electroless plating of a metal or metal alloy layer.

Abstract: The present disclosure is directed to an apparatus and method of sintering inorganic powder coatings on substrates, and includes a flame and an electric plasma. The method is capable of being used in an open atmospheric environment. The substrate is electrically conductive and is used as one electrode while the flame is used as the other electrode that is moved over the areas of the powder coating to be sintered. An electrical current is used to cause a plasma produced through the flame, resulting in a combined energy and temperature profile sufficient for inorganic powder-powder and powder-substrate bonding. This method is referred to as “flame-assisted flash sintering” (FAFS).

Abstract: During an example coating method, a metallic substrate is provided. A foundation coat precursor is applied on the metallic substrate. The foundation coat precursor includes a matrix and a plurality of capsules present in the matrix. Each capsule includes a shell and a healing agent surrounded by the shell. A basecoat precursor is applied, and a clearcoat precursor is applied. The metallic substrate, the foundation coat precursor, the basecoat precursor, and the clearcoat precursor are heated i) after each respective application or ii) simultaneously, in order to cure the foundation coat, basecoat, and clearcoat precursors and respectively form a foundation coat, a basecoat, and a clearcoat. The foundation coat is ultraviolet (UV) stable and bonds the metallic substrate to the basecoat and the clearcoat.

Abstract: An electrospark deposition electrode and an associated method for depositing coatings using the electrode are provided. The electrode includes a powder of a first metal and a powder of a second metal. The second metal is a braze alloy including nickel, the second metal having a lower melting point than the first metal. The powder of the first metal and the powder of the second metal are sintered together to form the electrode so that the powders are comingled but not combined within the electrode. The method includes depositing a layer of the first metal onto the substrate using an electrospark deposition process.

Abstract: A component for a turbomachine, the component including a coating for minimizing thermal gradients within the component, the coating including a first coating on at least a portion of a surface of the component, wherein the first coating is substantially free from rhenium. Further, the component includes a second coating on the first coating. The second coating includes rhenium for better thermal resistance. Furthermore, the component includes a homogeneous high porosity (HHP) layer on the second coating. Finally, the component includes an abradable layer on the homogeneous high porosity layer.

Abstract: Disclosed are novel compounds and methods useful in applications relating to industrial water systems. The compounds of the present invention are nitrogen-containing heterocyclic compounds comprising a benzotriazole covalently bonded to a benzimidazole moiety, and provide enhanced protection against corrosion of metals in aqueous systems. The compounds of the present invention are generally resistant to halogen attack and provide good corrosion resistance in the presence of oxidizing halogen-based biocides.

Abstract: Disclosed are methods of using nitrogen-containing compounds as corrosion inhibitors. The present method is used to inhibit corrosion of a metal surface in contact with an aqueous system using 2-substituted imidazoles and 2-substituted benzimidazoles, and provides enhanced protection against corrosion of metals in the aqueous system. The method comprises the use of corrosion inhibitors that are generally resistant to halogen attack and provide good corrosion resistance in the presence of oxidizing halogen-based biocides. Formulations comprising 2-substituted imidazoles and 2-substituted benzimidazoles are also disclosed.

Abstract: Disclosed are methods of using biodegradable heterocyclic compounds of relatively low toxicity as corrosion inhibitors. The present method is used to inhibit corrosion of a metal surface in contact with an aqueous system using compounds comprising a purine structure, and provides enhanced protection against corrosion of metals in aqueous systems. The method comprises the use of corrosion inhibitors that are generally resistant to halogen attack and provide good corrosion resistance in the presence of oxidizing halogen-based biocides. Formulations comprising purine-based compounds are also disclosed.

Abstract: A process for controlling the dissolution of a metal in an acid bath is described. The metal may comprise aluminum and the acid bath may contain a metal catalyst that causes the metal to dissolve. In order to control the rate of dissolution, the metal can be contacted with a cathodic member. In one embodiment, the process can be completely stopped even without removing the metal from the acid bath. The cathodic member provides anodic protection to the metal. In one embodiment, the cathodic member is made from a nickel-chromium-based alloy.

Abstract: An automated tank Cathodic/Corrosion Protection (CCP) monitoring system includes a mobile CCP data collection device. The data collection device can be moved horizontally to different locations in the tank. A reference electrode and corrosion coupon are lowered from the data collection device to desired depths within a liquid medium in the tank to collect data. The data collection device is connected to a programmable, external control unit enabling a operator to program a data collection schedule, the horizontal and vertical distance between readings, interruption of the system if the system is designed in a way to handle interruption, and has the ability to transmit the data remotely to a control center. These capabilities enable automated, remote monitoring of the CCP system, eliminate the safety concerns associated with sending technicians onto tank roofs, and give a more accurate and complete representation of the CCP system functionality and level of protection achieved.

Abstract: The present disclosure relates to nanocomposites of CuO/Cu2O and continuous flow solar reactors. The nanocomposites can be utilized as a photocatalyst and can be incorporated into photoelectrochemical devices. The described devices, systems, and methods can be used for converting CO2 into one or more alcohols and other small organics with the use of solar energy and electricity. Other embodiments are described.

Abstract: A catalyst for an oxygen evolution reaction has a higher and longer-life catalytic activity than that of the conventional and expensive noble metal oxide catalysts, such as RuO2 and IrO2. An A-site ordered perovskite oxide catalyst (such as CaCu3Fe4O12 and CaMn3Mn4O12 etc.) as an oxygen evolution reaction catalyst is excellent in cost effectiveness. The catalyst has a high catalytic activity compared with a noble metal oxide catalyst, and a long repetition use life since it is extremely stable also under the oxidative reaction conditions. Use of the catalyst is expected to the important energy conversion reactions such as a charge reaction of a metal-air battery, an anode oxygen evolution reaction in the case of a direct water decomposition reaction by sunlight, etc.

Abstract: The present invention relates to a manufacturing process for an anode assembly intended for cells for the production of aluminum by electrolysis, the anode assembly being of the type having an anode rod, a longitudinal member interdependent with one end of the anode rod and a carbon anode including a cavity in which is housed the longitudinal member, the method comprising a formation phase of at least one sealed area filled with sealing material and at least one unsealed area devoid of sealing material, said at least one unsealed area extending to one of the longitudinal ends of the longitudinal member.

Abstract: The present invention relates to a cyanide-free electrolyte which contains a phosphate and aliphatic or aromatic thio compounds and also to a process for the electrolytic deposition of an alloy of the elements copper and tin and optionally zinc. The electrolyte and the process are characterized in that stannate ions and copper ions and optionally zinc(II) ions and also aliphatic and/or aromatic thio compounds are present in the electrolyte used. The electrolyte can optionally additionally contain carboxylic acids, wetting agents and/or brighteners. The present invention further provides a process for the electrolytic deposition of alloys of copper, tin and optionally zinc on consumer goods and decorative goods using the electrolyte of the invention.

Abstract: Provided are: a plated material having excellent abrasion resistance, electrical conductivity, sliding performance, and low friction, and wherein a plating layer does not undergo embrittlement properly; and a method for producing the plated material. The method includes a first step of at least partially removing a reflow tin plating layer from a metallic base material having the reflow layer on at least a part thereof and a reactive layer provided at the interface between the reflow layer and the base material; a second step of at least partially subjecting a region in which the reflow tin plating layer has been removed to a nickel plating treatment; a third step of at least partially subjecting the nickel plating layer to a silver strike plating treatment; and a fourth step of at least partially subjecting a region of the silver strike plating to a silver plating treatment.

Abstract: Surface-oxidized, metallic components or semifinished products and corresponding planar components and methods for producing such components and/or semifinished products and corresponding components are disclosed. Such objects may be used, for example, in exterior skin parts of a motor vehicle, such as hoods, car roofs, car doors, fenders and/or side frames, baking trays, or baths. One object is to propose methods for producing surface-oxidized components or semifinished products that have an at least partially oxidized surface. The disclosed methods are suitable for mass production. Some example methods involve applying a surface layer comprising Al, Mg, Ti and/or Zr to a metallic substrate, and then performing plasma electrolytic oxidation of the surface layer. The metallic substrate may be cut to length and formed into a component or semifinished product before or after the plasma electrolytic oxidation. At least one part of the surface layer may be less than 200 ?m.

Abstract: A product according to one embodiment includes a first layer comprising a first material, the first layer having a gradient in composition, microstructure and/or density in an x-y plane, and the x-y plane being oriented parallel to a plane of deposition of the first layer. The first material includes non-spherical particles; and the product is optically transparent. A ceramic according to another embodiment includes a plurality of layers comprising non-spherical particles of a non-cubic material. Each layer is individually characterized by the non-spherical particles thereof being aligned in a common direction. A product in another embodiment includes a first layer having a first composition, a first microstructure, and a first density; and a second layer above the first layer, the second layer having: a second composition, a second microstructure, and/or a second density. A gradient in composition, microstructure, and/or density exists between the first layer and the second layer.

Abstract: An electroplating processor includes a base having a vessel body. A membrane assembly including a membrane housing is attached to a membrane plate. A membrane is provided on a membrane support attached to the membrane housing. An anode assembly includes an anode cup and one or more anodes in the anode cup. An anode plate is attached to the anode cup. Two or more posts on a first side of the anode plate are engageable with post fittings on the membrane plate. Latches on a second side of the anode plate are engageable with and releasable from a latch fitting on the membrane plate. The anode assembly is quickly and easily removable from the processor for maintenance, without disturbing or removing other components of the processor.

Abstract: A substrate holder includes: inner contacts (45) to be brought into contact with a periphery of a substrate (W) for passing an electric current to the substrate; outer contacts (42) each having elasticity, the outer contacts (42) having contact surfaces (42a), respectively, to be brought into contact with a feeding terminal (51) coupled to a power source (18), the outer contacts (42) being coupled to the inner contacts (45), respectively; and a conductive block (60) arranged in back of the contact surfaces (42a) and located away from the outer contacts (42). The outer contacts (42) are deformable until the outer contacts (42) are brought into contact with the conductive block (60) when the contact surfaces (42a) are pressed against the feeding terminal (51).

Abstract: An apparatus for automatically generating a metal-containing electrolyte (e.g., an electrolyte containing Sn2+ ions and an acid) includes an anolyte chamber configured to house an active anode (e.g., a metallic tin anode), an anolyte, and a sensor (e.g., one or more sensors) measuring a concentration of metal ions in the anolyte; a catholyte chamber configured to house a hydrogen-generating cathode and a catholyte; and a controller having program instructions for processing data from the sensor and for automatically generating an electrolyte having metal ions in a target concentration range in the anolyte chamber. In some embodiments, the apparatus is in communication with an electroplating apparatus and is capable to deliver the generated electrolyte to the electroplating apparatus on demand. In some embodiments, a densitometer and a conductivity meter are together used as sensors, and the apparatus is configured to generate low alpha tin electrolyte containing an acid.

Abstract: A shadow mask cleaning method and the cleaning device thereof are disclosed. The cleaning method comprises the steps of providing an alkaline conductive solution, and immersing a shadow mask into the alkaline conductive solution; connecting the shadow mask to one electrode selected from an anode or a cathode of a power source, and immersing the other electrode selected from the anode or the cathode of the power source into the alkaline conductive solution; and turning on the power source to generate an ionization reaction in the alkaline conductive solution to form gases, so that pollutants on the shadow mask are taken away from the shadow mask by the gases. By using the above mentioned method, the present invention can remove the pollutants from the shadow masks by the gases and improve the yield of the organic light emitting display panel and reduce the manufacture cost.

Abstract: A method of synthesizing uranium dioxide crystals. The method of synthesizing includes combining a uranium-based feedstock with a mineralizer solution. The uranium-based feedstock is selected from uranium dioxide, uranium tetrafluoride, uranium tetrachloride, triuranium octoxide, and uranium trioxide. The feedstock and mineralizer solution are pressurized, and then a thermal gradient is applied thereto such that a first portion of the feedstock and the mineralizer solution is heated to a temperature that is greater than a temperature of a second portion of the feedstock and the mineralizer solution. The uranium nutrient enters the mineralizer solution from the feedstock in the first portion and uranium nutrient precipitates to spontaneously form crystals in the second portion.

Abstract: A method of synthesizing rubidium uranium fluoride crystals. The method includes combining uranium-based feedstock with a mineralizer solution that includes a rubidium fluoride. The feedstock and mineralizer solution are pressurized and a thermal gradient applied thereto such that a first portion of the feedstock and the mineralizer solution is heated to a temperature that is greater than a temperature of a second portion of the feedstock and the mineralizer solution. Uranium nutrient enters the mineralizer solution from the feedstock in the first portion and uranium nutrient precipitates to spontaneously form crystals in the second portion.

Abstract: A method for manufacturing metal nano-wires is described, which is suitable for manufacturing silver nano-wires and copper nano-wires and includes the following steps. A metal nano-particle resulting solution is prepared to mix a first metal ionic compound, a first reductant and a first capping agent, so as to form various metal nano-particles. An illumination treatment is performed on the metal nano-particle resulting solution. A portion of the metal nano-particle resulting solution after the illumination treatment is mixed with a metal nano-wire resulting solution to form metal nano-wires by using the metal nano-particles of the portion of the metal nano-particle resulting solution as seeds. The metal nano-wire resulting solution includes a second metal ionic compound, a second reductant and a second capping agent.

Abstract: A crucible provided with a holding section (12) for holding a raw material (20), an initial distillate recovery section (14) for recovering an initial distillate (24) when the raw material (20) held in the holding section (12) has been vaporized, a main distillate condensing section (16) for condensing a main distillate when the raw material (20) held in the holding section (12) has been vaporized, and a crystal growing section (18) for holding the main distillate (30) comprising a raw material melt (28) condensed by the main distillate condensing section (16) and producing crystals when crystals are grown from the held main distillate (30) is used as a crucible (10) for crystal growth used to grow crystals. This makes it possible to raise the efficiency of manufacturing crystals while achieving high purification of a raw material for semiconductor crystals.

Abstract: The present invention is directed towards an integrated and economic process for making mono-crystalline silicon for photovoltaic applications. It utilizes high purity, low dopant metallurgically produced silicon, in particular, silicon recovered from silicon manufacturing processes, such as kerf silicon processed through a metallurgical furnace process. Liquid silicon from the metallurgical process is cast into specific forms and utilized for float zone purification and crystallization to make mono-crystalline silicon ingots and wafers for photovoltaic cell fabrication.

Abstract: In a method for manufacturing a group 13 nitride crystal, a seed crystal made of a group 13 nitride crystal is arranged in a mixed melt containing an alkali metal and a group 13 element, and nitrogen is supplied to the mixed melt to grow the group 13 nitride crystal on a principal plane of the seed crystal. The seed crystal is manufactured by vapor phase epitaxy. At least a part of contact members coming into contact with the mixed melt in a reaction vessel accommodating the mixed melt is made of Al2O3. An interface layer having a photoluminescence emission peak whose wavelength is longer than the wavelength of a photoluminescence emission peak of the grown group 13 nitride crystal is formed between the seed crystal and the grown group nitride crystal.

Abstract: In various embodiments, methods of forming single-crystal AN include providing a substantially undoped polycrystalline AN ceramic having an oxygen concentration less than approximately 100 ppm, forming a single-crystal bulk AN crystal by a sublimation-recondensation process at a temperature greater than approximately 2000 ° C., and cooling the bulk AN crystal to a first temperature between approximately 1500 ° C. and approximately 1800 ° C. at a first rate less than approximately 250 ° C./hour.

Abstract: A method for manufacturing a silicon carbide substrate is a method for manufacturing a silicon carbide semiconductor substrate, in which epitaxial growth is carried out in a reaction chamber, and includes the steps of arranging a base substrate composed of silicon carbide in the reaction chamber and forming an epitaxially grown film on the base substrate. In the step of forming an epitaxially grown film, the base substrate is heated while a reaction gas in which a first gas containing ammonia and a second gas containing a halide but not containing ammonia have been mixed with each other is supplied toward the base substrate. The first gas is mixed with the second gas after the first gas is heated no that ammonia contained in the first gas can be thermally decomposed.

Abstract: A heat shield assembly for an epitaxy chamber is described herein. The heat shield assembly has a heat shield member and a preheat member. The heat shield member is disposed on the preheat member. The heat shield member has a cutout portion that exposes a portion of the preheat member. The preheat member has a recessed portion to receive the heat shield member.

Abstract: A reflector for processing a semiconductor substrate is provided. The reflector includes an annular body having an outer edge, an inner edge, and a bottom side. The bottom side includes a plurality of first surfaces and a plurality of second surfaces. Each first surface and each second surface is positioned at a different angular location around the annular body. Each first surface is a curved surface having a radius of curvature from about 1.50 inches to about 2.20 inches.

Abstract: A single crystal CVD diamond component comprising: a surface, wherein at least a portion of said surface is formed of as-grown growth face single crystal CVD diamond material which has not been polished or etched and which has a surface roughness Ra of no more than 100 nm; and a layer of NV? defects, said layer of NV? defects being disposed within 1 ?m of the surface, said layer of NV? defects having a thickness of no more than 500 nm, and said layer of NV? defects having a concentration of NV? defects of at least 105 NV?/cm2.

Abstract: An electrospinning device includes a rotatable carrier, a collector unit including at least one collector bar, a dispenser for dispensing a polymer composition, and a power supply. The collector bar is disposed on the rotatable carrier and is rotatable about a longitudinal axis. The power supply is configured to produce a potential difference between the dispenser and the collector bar so as to permit the polymer composition to erupt from the dispenser as a jet of the polymer composition toward the collector bar to thereby permit the resultant electrospun fibers to be collected on the collector bar. By rotating the rotatable carrier at a relatively fast speed, the electrospun fibers are drawn to be arranged along the longitudinal axis.

Abstract: Compositions and articles with improved flame properties and fabric with improved melt dripping properties is disclosed. Reduced melt dripping can prevent injuries. Methods for making and using such compositions, articles and fabric are disclosed.

Abstract: The invention relates to a molded cellulose body which includes a functional substance having low impregnation efficiency, to the use thereof and to a method for introducing functional substances of low impregnation efficiency into a molded cellulose body during its production and after the molding step.

Abstract: A method for preparing a high temperature melt integrity separator, the method comprising spinning a polymer by one or more of a mechanical spinning process and an electro-spinning process to produce fine fibers.

Abstract: A manufacturing method of carbon nanofibers at a high activity is provided. Further, carbon nanofibers produced by the manufacturing method and being excellent in electric conductivity, crystallinity and dispersibility is provided. By a manufacturing method of carbon nanofibers in which an active species including cobalt as a chief component is employed as a catalyst and carbon monoxide is used as a carbon source, wherein said catalyst has 3 to 150 mass % of said active species carried on a carrier composed of a magnesium-containing oxide having a specific surface area of 0.01 to 5 m2/g, and a reaction temperature, partial pressure of carbon monoxide and a flow rate of raw material gas is controlled, CNFs that are excellent in electric conductivity, crystallinity and dispersibility can be manufactured at high activity, so that carbon nanofibers that is excellent in electric conductivity, crystallinity and dispersibility is obtained.

Abstract: The present disclosure relates to a preparation method for lowering a production cost of a high performance carbon fiber using a nanocarbon composite carbon fiber precursor fiber crosslinked by electron beam.