Abstract: The invention is a process for manufacturing a nano aluminum/alumina metal matrix composite and composition produced therefrom. The process is characterized by providing an aluminum powder having a natural oxide formation layer and an aluminum oxide content between about 0.1 and about 4.5 wt. % and a specific surface area of from about 0.3 and about 5 m2/g, hot working the aluminum powder, and forming a superfine grained matrix aluminum alloy. Simultaneously there is formed in situ a substantially uniform distribution of nano particles of alumina. The alloy has a substantially linear property/temperature profile, such that physical properties such as strength are substantially maintained even at temperatures of 250° C. and above.

Abstract: High modulus turbine shafts and high modulus cylindrical articles are described as are the process parameters for producing these shafts and cylindrical articles. The shafts/articles have a high Young's modulus as a result of having high modulus <111> crystal texture along the longitudinal axis of the shaft/article. The shafts are produced from directionally solidified seeded <111> single crystal cylinders that are axisymmetrically hot worked before a limited recrystallization process is carried out at a temperature below the recrystallization temperature of the alloy. The disclosed process produces an intense singular <111> texture and results in shaft or cylindrical article with a Young's modulus that is at least 40% greater than that of conventional nickel or iron alloys or conventional steels.

Abstract: An aluminum alloy including additions of scandium, zirconium, erbium and, optionally, silicon.

Abstract: A weldable, high temperature oxidation resistant alloy with low solidification crack sensitivity and good resistance to strain age cracking. The alloy contains by weight percent, 25% to 32% iron, 18% to 25% chromium, 3.0% to 4.5% aluminum, 0.2% to 0.6% titanium, 0.2% to 0.43% silicon, up to 0.5% manganese and the balance nickel plus impurities. The Al+Ti content should be between 3.4 and 4.2 and the Cr/Al ratio should be from about 4.5 to 8.

Abstract: A rare-earth sintered magnet includes 12.0 at % to 15.0 at % of rare-earth element(s), which is at least one element selected from the group consisting of Nd, Pr, Gd, Tb, Dy and Ho and at least 50% of which is Nd and/or Pr; 5.5 at % to 8.5 at % of boron (B); a predetermined percentage of additive metal A; and iron (Fe) and inevitably contained impurities as the balance. The predetermined percentage of additive metal A includes at least one of 0.005 at % to 0.30 at % of silver (Ag), 0.005 at % to 0.40 at % of nickel (Ni), and 0.005 at % to 0.20 at % of gold (Au).

Abstract: A method to limit surface zone recrystallization in a superalloy article includes limiting recrystallization in a surface zone of a superalloy article by treating the superalloy article in an oxygen-containing environment to introduce oxygen into the surface zone in an amount sufficient to pin any new grain boundaries in the surface zone.

Abstract: An aluminum alloy member resistant to cracking and having high strengths and excellent stress corrosion cracking resistance is manufactured by expanding a 7xxx aluminum alloy hollow extrusion at a rate of 5% or more. Specifically, a 7xxx aluminum alloy hollow extrusion containing Zn of 3.0-9.5%, Mg of 0.4-2.5%, Cu of 0.05-2.0%, and Ti of 0.005-0.2%, in mass percent, and prepared through press quenching is subjected to a reversion treatment, to pipe expansion within 72 hours after the reversion treatment, and to temper aging. The reversion treatment includes heating at a temperature rise rate of 0.4° C./second or more, holding in a temperature range of 200-550° C. for longer than 0 second, and cooling at a rate of 0.5° C./second or more. The ratio Y (?rs/?0.2) of the tensile residual stress ?rs to the 0.2% yield stress ?0.2 after temper aging and the total content X of Mg and Zn satisfy Expression (1): Y??0.1X+1.4 ??(1).

Abstract: A high-strength hot-dip galvanized steel sheet containing a main component, the steel sheet having at least 40 wt. % of ferrite as a main phase in terms of the volumetric ratio, and 8-60% inclusive of residual austenite, the remaining structure comprising one or more of bainite, martensite, or pearlite. Austenite particles within a range where the average residual stress (sigmaR) thereof satisfies the expression ?400 MPa<=sigmaR<=200 MPa (formula (1)) are present in an amount of 50% or more in the hot-dip galvanized steel sheet. The surface of the steel sheet has a hot-dip galvanized layer containing less than 7 wt. % of Fe, the remainder comprising Zn, Al and inevitable impurities.

Abstract: A steel sheet shape control method includes, (A) setting a target correction shape of the steel sheet at a position of an electromagnet to a curved shape, (B) measuring a steel sheet shape when electromagnetic correction is performed, (C) calculating the steel sheet shape in a nozzle position based on the steel sheet shape, (D) repeating (B) and (C) by resetting the target correction shape to a curved shape having a smaller amount of warp, (E) when the amount of warp of the steel sheet shape at the position of the nozzle is less than the upper limit value, (F) calculating vibration of the steel sheet at the position of the nozzle, and (G) adjusting a control gain of the electromagnet until amplitude of vibration is less than a second upper limit value when the amplitude of the vibration is equal to or more than the second upper limit value.

Abstract: Provided are: a galvannealed steel sheet, improved in the adhesiveness of a plated layer with a base steel sheet, as a galvannealed steel sheet, prepared by using a high-strength steel sheet as a base material; and a method for producing the galvannealed steel sheet. A galvannealed layer is formed on the base steel sheet including a high-strength steel having a predetermined composition. The average amount of Fe in the galvannealed layer is 8.0 to 12.0%. The absolute value of a difference (?Fe) between the amount of Fe in the vicinity of an interface with the base steel sheet and the amount of Fe in the vicinity of the external surface of the plated layer in the plated layer is 0.0 to 3.0%.

Abstract: Coating methods and a coated substrate are provided. The coating method includes providing a component having an aperture formed in a surface thereof, arranging and disposing a hollow member on a portion of the surface to define a hollow space above the aperture corresponding to a shape of the aperture at the surface, applying at least one coating over the surface of the component and the hollow member to form an applied coating having an applied coating thickness, and removing at least a portion of the hollow member to expose the hollow space through the applied coating. The coated substrate includes a component having an aperture formed in a surface thereof, a hollow member arranged and disposed on the surface to define a hollow space above the aperture, and an applied coating over the surface of the component, the hollow space being exposed through the applied coating.

Abstract: A powder comprising rare earth element fluoride particles having an aspect ratio of up to 2, an average particle size of 10-100 ?m, a bulk density of 0.8-1.5 g/cm3, and a carbon content of 0.1-0.5 wt % is amenable to atmospheric plasma spraying. An article obtained by spraying the rare earth fluoride spray powder to a substrate undergoes few partial color changes and performs well even when used in a halogen gas plasma.

Abstract: A film forming apparatus, for forming a metal oxide film on an object, includes a holding unit and a heating unit. The holding unit includes a first heater and holds the object in a processing chamber. A first heater power supply supplies power to the first heater. A target electrode is electrically connected to a metal target provided above the holding unit. A sputtering power supply is electrically connected to the target electrode. An introduction mechanism supplies an oxygen gas toward the holding unit. The heating unit includes a second heater for heating the object and a moving mechanism for moving the second heater between a region in a first space disposed above the holding unit and a region in a second space separated from the first space. A second heater power supply supplies power to the second heater.

Abstract: In systems where insulating deposits form during normal operation, electrodes are configured so the deposits have the effect of creating in-situ triple junctions. These triple junctions enhance low level discharge activity to facilitate localized breakdown of the deposits and maintain electrode conductivity.

Abstract: A tool hard film that is to be disposed as coating on a surface of a tool, the tool hard film being a TiCrMoWV oxycarbide, oxynitride, or oxycarbonitride having a phase with a NaCl-type crystal structure as a main phase, the oxycarbide, oxynitride, or oxycarbonitride having fine crystals due to introduction of oxygen.

Abstract: An evaporation apparatus with high utilization efficiency for EL materials and excellent film uniformity is provided. The invention is an evaporation apparatus having a movable evaporation source and a substrate rotating unit, in which the space between an evaporation source holder and a workpiece (substrate) is narrowed to 30 cm or below, preferably 20 cm, more preferably 5 to 15 cm, to improve the utilization efficiency for EL materials. In evaporation, the evaporation source holder is moved in the X-direction or the Y-direction, and the workpiece (substrate) is rotated for deposition. Therefore, film uniformity is improved.

Abstract: The disclosure extends to protectively coated energy storage devices, such as rechargeable batteries, and associated methods of forming the same. An energy storage device, such as a rechargeable battery, may comprise a cell including at least one electrical terminal and a circuit board electrically coupled to the at least one electrical terminal. The rechargeable battery may also include a protective coating on at least a portion of at least one of a surface of the cell and/or at least one surface of the circuit board. The protective coating may reside between the circuit board and the cell. The protective coating may comprise a moisture resistant coating that will withstand exposure to corrosive agents, including electrolytes, corrosive gases and dust.

Abstract: Film-formation rate can be increased in the pre-sputtering and in the subsequent sputtering onto a substrate or the like, and sputtering failures such as splashes can be inhibited, by making an Al-based alloy or Cu-based alloy spurting target fulfill the following requirements (1) and/or (2) when the total area ratio of crystal orientations <001>±15°, <011>±15°, <111>±15°, <112>±15°, and <012>±15° in the sputtering surface normal direction in the depth within 1 mm from the uppermost surface of the sputtering target is referred to as a P value: (1) the area ratio PA of <011>±15° to the P value: 40% or lower; and (2) the total area ratio PB of <001>±15° and <111>±15° to the P value: 20% or higher.

Abstract: A high-power pulsed magnetron sputtering process, wherein within a process chamber by means of an electrical energy source a sequence of complex discharge pulses is produced by applying an electrical voltage between an anode and a cathode in order to ionize a sputtering gas. The complex discharge pulse is applied for a complex pulse time. The cathode has a target comprising a material to be sputtered for the coating of a substrate, and the complex discharge pulse includes an electrical high-power sputtering pulse having a negative polarity with respect to the anode and being applied for a first pulse-time, the high-power sputtering pulse being followed by an electrical low-power charge cleaning pulse having a positive polarity with respect to the anode and being applied for a second pulse-time. The ratio ?1/?2 of the first pulse-time (?1) in proportion to the second pulse-time (?2) is 0.5 at the most.

Abstract: The invention relates to a coating method for depositing a layer system formed from hard material layers on a substrate, by depositing at least one contact layer including the evaporation material on the surface of the substrate only by means of a cathodic vacuum arc evaporation source. After the depositing of the contact layer, at least one intermediate layer is deposited in the form of a nano-layer intermediate layer in a hybrid phase or as a nanocomposite layer, including the evaporation material and the discharge material, by parallel operation of a cathodic vacuum arc evaporation source and of a magnetron discharge source.

Abstract: A film forming method includes supplying a first source gas containing a first metal element onto a substrate, supplying a second source gas containing a second metal element onto the substrate, supplying a reaction gas converted into plasma and containing a nonmetal element reacting with the first metal element and the second metal element to generate a first reaction product and a second reaction product, respectively, to the substrate, to generate a third reaction product containing the first metal element, the second metal element and the nonmetal element. A mixing ratio of the first metal element contained in the third reaction product is higher than that of the second metal element, and a crystallization temperature of the second reaction product is higher than that of the first reaction product.

Abstract: A reaction apparatus for a semiconductor fabrication apparatus, wherein the reaction apparatus includes at least two adjustable outlet ports for withdrawing reactant gases from the reaction chamber. Adjustment of the flow rate through each of the outlet ports selectively modifies the flow pattern of the reactant gases within the reaction chamber to maintain a desired flow pattern therewithin, such as a substantially uniform flow over the surface of a substrate being processed, and/or minimization of turbulence within the reactor.

Abstract: Corrosion resistant substrate supports and methods of making corrosion resistant substrate supports are provided herein. In some embodiments, a method of making corrosion resistant substrate supports includes exposing the substrate support disposed within a substrate processing chamber to a process gas comprising an aluminum containing precursor; and depositing an aluminum containing layer atop surfaces of the substrate support.

Abstract: A substrate support device includes a plate portion including a heater plate that includes a heating element provided in the heater plate, and also including a first cooling plate provided on a bottom surface of the heater plate and having a first flow path, and a second cooling plate provided on a top surface of the heater plate and having a second flow path; and a shaft portion supporting the plate portion and including a line connected to the heating element to supply an electric current to the heating element, and a tube supplying a coolant to the first cooling plate and the second cooling plate, the line and the tube being provided inside the shaft portion.

Abstract: The deposition of graphene is accomplished by various techniques that result in a change of the graphene's solubility in the liquid medium. The solubility change enables the deposition of the graphene onto the substrate. Once the graphene is deposited onto the substrate, the at least partially coated substrate may be separated from the liquid medium. The substrates may then serve as a carrier to deliver the graphene to a desired application.

Abstract: The present invention relates to the etching, activation and deposition of a first metal or metal alloy layer onto non-conductive polymers. The non-conductive polymer is etched with an aqueous solution comprising 0.75 to 3.6 g/l permanganate ions in 60 to 80 vol.-% sulfuric acid, activating with a solution comprising a noble metal and depositing a first metal or metal alloy by immersion-type or electroless (autocatalytic) plating. The first metal or metal alloy layer obtained has a high adhesion on the non-conductive polymer and serves as a plating base for electroplating further metal and/or metal alloy layer(s) thereon.

Abstract: A solution for providing electroless deposition of a metal layer on a substrate is provided. A solvent is provided. A metal precursor is provided to the solvent. A first borane containing reducing agent is provided to the solvent. A second borane containing reducing agent is provided to the solvent, wherein the first borane containing reducing agent has a deposition rate of at least five times a deposition rate of the second borane containing reducing agent, and wherein the solution is free of nonborane reducing agents.

Abstract: A CMP method uses a slurry including a first metal oxide or semiconductor oxide particles (first oxide particles) in water. At least one particle feature is selected from (i) first oxide particles having a polydispersity >30%, (ii) a coating on first oxide particles including Group I or Group II ions, transition metal oxide, or organic material, (iii) first oxide particles mixed with fumed oxide particles, (iv) first oxide particles with average primary size >50 nm mixed with fumed oxide particles having average primary size <25 nm, and (v) first oxide particles with a per surface area per unit mass <100 m2/gm mixed with another oxide particle type having an average area per unit mass >150 m2/gm. A substrate having an alumina surface is placed into a CMP apparatus, and CMP is performed with a rotating polishing pad and the slurry to polish the alumina surface.

Abstract: The electrochemical reactors disclosed herein provide novel oxidation and reduction chemistries and employ increased mass transport rates of materials to and from the surfaces of electrodes therein.

Abstract: Disclosed is an anode electrode including a nitride semiconductor layer. This nitride semiconductor layer includes an AlxGa1-xN layer (0<x?0.25), an AlyGa1-yN layer (0?y?x), and a GaN layer. The AlyGa1-yN layer is interposed between the AlxGa1-xN layer and the GaN layer. The value of x is fixed in the thickness direction of the AlxGa1-xN layer. The value of y decreases from the interface with the AlxGa1-xN layer f toward the interface with the GaN layer. The AlxGa1-xN layer is irradiated with light having a wavelength of 360 nm or less so as to reduce carbon dioxide.

Abstract: An electrolytic cell for producing primary aluminum by using inert anodes is disclosed, in which an electrolyte system KF—NaF—AlF3 is used and the operating temperature of the cell is 700-850° C. The electrolytic cell comprises a cell shell, heat insulating refractory lining, a melting pot, a heat insulating cover, inert electrodes, electrode stems, anode bus-bars, cathode bus-bars, anode branching bus-bars, heat insulating plates, partitions between anodes and cathodes and a feeding device. The quality of the aluminum product obtained by using the electrolytic cell is not less than 99.7%. The cell is free from emission of carbon dioxide and perfluorinated compounds (PFCs), and hardly has consumption of electrodes, so the distances between anodes and cathodes can be kept stable. The cell is sealed and the volatilization of dust and fluorides can be prevented, and it is useful to recover oxygen gas.

Abstract: The invention generally relates to systems and methods for producing metal clusters; functionalized surfaces; and droplets including solvated metal ions. In certain aspects, the invention provides methods that involve providing a metal and a solvent. The methods additionally involve applying voltage to the solvated metal to thereby produce solvent droplets including ions of the metal containing compound, and directing the solvent droplets including the metal ions to a target. In certain embodiments, once at the target, the metal ions can react directly or catalyze reactions.

Abstract: The present invention relates to aqueous acidic plating baths for copper and copper alloy deposition in the manufacture of printed circuit boards, IC substrates, semiconducting and glass devices for electronic applications. The plating bath according to the present invention comprises copper ions, at least one acid and an ureylene polymer comprising amino residues on both termini and which is free of organically bound halogen. The plating bath is particularly useful for filling recessed structures with copper and build-up of pillar bump structures.

Abstract: The present disclosure relates to a leveling composition for electrodepositing metals.

Abstract: An insulated metal substrate (IMS) for supporting a device comprises a metallic substrate having a ceramic coating formed at least in part by oxidation of a portion of the surface of the metallic substrate. The ceramic coating has a dielectric strength of greater than 50 KV mm?1 and a thermal conductivity of greater than 5 Wm?1K?1.

Abstract: A paddle for a plating system has a housing with a back portion, a front portion, a first side portion, a second side portion, a first end portion, and a second end portion. A first fin is disposed laterally along a first external surface of the first side portion and offset and coupled to the first external surface to define a first passageway between the first external surface of the first side portion and a first internal surface of the first fin for flow of the electrolyte through the first passageway. A second fin is disposed laterally along a second external surface of the second side portion and offset and coupled to the second external surface to define a second passageway between the second external surface of the second side portion and a second internal surface of the second fin for flow of the electrolyte through the second passageway.

Abstract: An Sn alloy plating apparatus is disclosed which can relatively easily perform control of an Sn alloy plating solution, including control of the Sn ion concentration and the acid concentration of the plating solution.

Abstract: The invention discloses an electrochemical polishing solution, a process for electrochemically polishing a graphite gate electrode and a graphite gate electrode, which are used for providing an electrochemical polishing solution and a polishing process to efficiently remove the contaminant on the surface of a gate electrode and improve the quality of the gate electrode. Said electrochemical polishing solution comprises 900-1000 parts by weight of water; 195-205 parts by weight of an alkaline metal hydroxide; 49-51 parts by weight of a weak acid salt; and 294-306 parts by weight of an additive.

Abstract: A method of preparing silicon carbide powder is provided, which includes mixing first silicon carbide powder with a liquid silicon carbide precursor, annealing the mixture at a first temperature and converting the silicon carbide precursor to a ?-phase silicon carbide particulate material, and annealing the material at a second temperature and grain-growing the first silicon carbide powder to second silicon carbide powder using the ?-phase silicon carbide particulate material.

Abstract: Provided is a two-dimensional large-area growth method for a chalcogen compound, the method including: depositing a film of a transition metal element or a Group V element on a substrate; thereafter, uniformly diffusing a vaporized chalcogen element, a vaporized chalcogen precursor compound or a chalcogen compound represented by M?X?2+? within the film; and, thereafter, forming a film of a chalcogen compound represented by MX2 by forming the chalcogen compound represented by MX2 through post-heating.

Abstract: A method of growing high-quality, group-III nitride, bulk single crystals. The group III-nitride bulk crystal is grown in an autoclave in supercritical ammonia using a source material or nutrient that is a group III-nitride polycrystals or group-III metal having a grain size of at least 10 microns or more and a seed crystal that is a group-III nitride single crystal. The group III-nitride polycrystals may be recycled from previous ammonothermal process after annealing in reducing gas at more then 600° C. The autoclave may include an internal chamber that is filled with ammonia, wherein the ammonia is released from the internal chamber into the autoclave when the ammonia attains a supercritical state after the heating of the autoclave, such that convection of the supercritical ammonia transfers source materials and deposits the transferred source materials onto seed crystals, but undissolved particles of the source materials are prevented from being transferred and deposited on the seed crystals.

Abstract: The present disclosure is directed to an apparatus and method for growing a sapphire sheet via edge-defined film-fed growth (EFG) including an angled heat shield with respect to the a side surface of a die tip. The present disclosure is further directed to an sapphire sheets and batches of such sheets having features such as a particular maximum low spot thickness.

Abstract: A CVD single crystal diamond material suitable for use in, or as, an optical device or element. It is suitable for use in a wide range of optical applications such as, for example, optical windows, laser windows, optical reflectors, optical refractors and gratings, and etalons. The CVD diamond material is produced by a CVD method in the presence of a controlled low level of nitrogen to control the development of crystal defects and thus achieve a diamond material having key characteristics for optical applications.

Abstract: There is disclosed a method and an apparatus for production of micro-carbon fibers. The method comprises introducing a selected chemical mixture suitable for creating micro-carbon fibers into a heating chamber and heating the heating chamber using a series of burners. The method further comprises injecting carbon feed stock into a catalyst reaction chamber to initiate a micro-carbon generating chemical process to occur.

Abstract: A method of forming carded fibers of different materials. A feed system has a plurality of separate laterally spaced chambers containing fibers of different materials. The different fibers are fed in separate laterally spaced paths into a carding apparatus having a plurality of rollers and cylinders each having laterally spaced sections in alignment with the laterally spaced paths to receive and maintain the different fibers in the laterally spaced paths thereon as they move through the carding apparatus. The different fibers are combined into a multi-fiber roving or web after they exit the carding apparatus. Depending on the composition of the different fibers, they may be combined by conveying them through a humidifying and heated chamber or chambers.

Abstract: A first fabric layer of a down-proof double-layer fabric has a plurality of first warps and a plurality of first wefts. A second fabric layer has a plurality of second warps and a plurality of second wefts. The first fabric layer and the second fabric layer have a plurality of coupling portions. In the coupling portions, the first fabric layer and the second fabric layer pass through each other repeatedly, and the first warps and the second warps are interlaced. The first warps, the first wefts, the second warps, and the second wefts are between 20 denier and 75 denier. The warp densities of the first fabric layer and the second fabric layer are between 336 pieces/in and 456 pieces/in, and the weft densities of the first fabric layer and the second fabric layer are between 220 pieces/inch2 and 300 pieces/in.

Abstract: A fiber preform of ?-shaped section, the preform including a base with a first face and an opposite second face, legs extending from the second face, and a fiber structure woven as a single piece by three-dimensional weaving with a plurality of layers of warp or weft yarns linked interlinked by weft or warp yarns in a plurality of layers of weft or warp yarns. In each plane of the preform, the weft or warp yarns of a first group of weft or warp yarns extend continuously through the base between two opposite edges thereof, and weft or warp yarns of a second group of weft or warp yarns extend continuously from an end of one of the legs to an end of the other leg, passing via the base, with the yarns of the first group and the yarns of the second group presenting two mutual crossings.

Abstract: A knit fabric having a modified knit structure comprising a first layer of jersey knit fabric and a second layer of jersey knit fabric, wherein the first and second layers of jersey knit fabric are joined to each other by a third layer of tuck stitches, and wherein the first and second jersey stitch layers include at least one continuous strand of bare rubber and a plurality of continuous strands selected from the group consisting of continuous strands of bare rubber and continuous strands of non-elastic yarn, and the third layer of tuck stitches are made of continuous strands of non-elastic yarn, knit together into the fabric so as to hold the first and second jersey stitch layers together.

Abstract: It is an objective of the present invention to provide a method for knitting a novel knitted fabric in which a stitch direction on an instep side is orthogonal to a stitch direction on a sole side using a flat knitting machine. In a sole section (4), a pickup stitch (8) in which a cover section (3) continues to a left side and a right side of the sole section (4) is formed while moving a stitch row of a BB, which becomes a part of a toe section (2), toward one side (right) in a knitting width direction. In the cover section (3), a three-dimensional cover section (3) is formed by carrying out a narrowing knitting while forming a new stitch following a stitch row of an FB of the toe section (2), a stitch row of an BB of the toe section (2) in which the pickup stitch (8) is formed on a left side (12) and a right side (13) of the sole section (4) while being moved toward the right, and a stitch row of the pickup stitch (8).

Abstract: A device for producing an absorbent body includes a rotating fiber stacking drum that includes an adsorbent molding section configured to mold fluff pulp into an absorbent body having a desired shape. The rotating fiber stacking drum further includes a cylinder having an outer circumference on which the adsorbent molding section is formed, and paired side walls that close ends of the cylinder, respectively. The device for producing an absorbent body further includes a sucking means, which is configured to generate an air flow from the outer circumference side of the adsorbent molding section toward the inside of the cylinder by sucking air in the rotating fiber stacking drum. The sucking means is connected to each of two side walls of the rotating fiber stacking drum.