Abstract: A lighting device comprises a solid state light emitter on a circuit board, and an optic held in place relative to the first circuit board, a voltage drop across the emitter at least 60 volts. A lighting device comprises a solid state light emitter on a first circuit board, an optic held in place relative to the first circuit board, and a non-isolated power supply. A lighting device comprises a solid state light emitter on a first circuit board, and a flame-rated optic held in place relative to the first circuit board. An optic, comprising a translucent region, a first dimension not larger than about 10 mm, a second dimension not larger than 15 mm. A flame-rated optic comprising a translucent region, structure configured to hold the optic in place relative to a circuit board. Methods of making lighting devices.

Abstract: A hollow frame is configured to surround the periphery of a substantially self-supporting flip-chip light emitting device. The frame may be shaped to also contain a wavelength conversion element above the light emitting surface of the light emitting device. The lower surface of the light emitting device, which is exposed through the hollow frame, includes contact pads coupled to the light emitting element for surface mounting the light emitting module on a printed circuit board or other fixture. The flip-chip light emitting device may include a patterned sapphire substrate (PSS) upon which the light emitting element is grown, the patterned surface providing enhanced light extraction from the light emitting element, through the patterned sapphire substrate.

Abstract: A light emitting device includes a package including a resin member having an inner side surface defining a recess, and a lead frame supported by the resin member and arranged at a bottom surface of the recess; and a light emitting element electrically connected to the lead frame. An outer side surface of the resin member at a portion corresponding to the recess is at least partially covered with a reflective film.

Abstract: A light-emitting device comprises a substrate; a plurality of light-emitting diodes formed on the substrate, wherein each of the plurality of light-emitting diodes comprises a first conductivity type layer, an active layer on the first conductivity type layer, and a second conductivity type layer on the active layer; a reflective layer surrounding a sidewall of each of the plurality of light-emitting diodes; and a top electrode formed on the reflective layer and the plurality of light-emitting diodes.

Abstract: An optoelectronic semiconductor component including an optoelectronic semiconductor chip having a first surface, wherein the first surface is a radiation emission surface of the optoelectronic semiconductor chip, the semiconductor chip is embedded in a mold body, the first surface is elevated with respect to a top side of the mold body, and a reflective layer is arranged on the top side of the mold body.

Abstract: An LED illumination module in which LED bare chips are mounted on a mounting substrate at a high density, the module comprising many LED bare chips having the same specifications, the mounting substrate at least a surface of which is metal, and a reflection region in which the LED bare chips are sealed off with resin, wherein a surface of the reflection region of the mounting substrate is covered with an inorganic white insulating layer that functions as a reflection member, a unit LED chip group including a plurality of LED bare chips connected in series is disposed plural, the plural unit LED chip groups being connected in parallel, overall light flux is 10,000 lumens or more, and a mounting area density of the LED bare chips in the reflection region is 15 mm2/cm2 or more. An LED illumination apparatus including the LED illumination module is also provided.

Abstract: A light emitting device includes an electrically conductive member, a light emitting element, a wire, and a sealing member. The wire contains gold and silver and connects the electrically conductive member and the light emitting element. The wire includes a ball portion and a recrystallized region. The ball portion is provided on an electrode of the light emitting element. The recrystallized region is provided on the ball portion and has a length in a range of 50 ?m to 90 ?m. The sealing member has a lower surface and an upper surface opposite to the lower surface and covers the light emitting element and the wire so that the lower surface faces the electrically conductive member and the light emitting element and so that a distance from a top of the ball portion to the upper surface of the sealing member is 90 ?m to 230 ?m.

Abstract: Solid-state lighting devices (SSLDs) including a carrier substrate with conductors and methods of manufacturing SSLDs. The conductors can provide (a) improved thermal conductivity between a solid-state light emitter (SSLE) and a package substrate and (b) improved electrical conductivity for the SSLE. In one embodiment, the conductors have higher thermal and electrical conductivities than the carrier substrate supporting the SSLE.

Abstract: The invention relates to a thermoelectric device, comprising pipes (8), called hot pipes, through which a first fluid can flow, and elements (3p, 3n), called thermoelectric elements, that can be used to generate an electric current in the presence of a temperature gradient. According to the invention, it comprises fins (5p, 5n) that can be configured in a heat exchange relationship with pipes (9), called cold pipes, through which a second fluid can flow at a temperature lower than that of the first fluid, and in that the thermoelectric elements (3p, 3n) are in contact, on the one hand, with the hot pipes (8) and, on the other hand, with the fins (5p, 5n), such that said thermoelectric elements (3p, 3n) generate said current.

Abstract: The invention relates to a thermoelectric heat exchanger, comprising two pipes, wherein a first pipe encloses a second pipe. In a thermoelectric heat exchanger which has a high level of efficiency, a thermoelectric material unit is arranged between the first and second pipes, preferably without mechanical contact with said first and second pipes, and a first fluid flows around the first pipe from the outside, while a second fluid flows through the second pipe.

Abstract: A hybrid device (80) comprises, in a first zone (91), at least one thermoelectric element (3) allowing an electric current to be generated from a temperature gradient applied between two of its active faces (4a, 4p). The device (80) further comprises a first circuit (1) able to allow the circulation of a first fluid, and a second circuit (2) able to allow the circulation of a second fluid of a temperature lower than that of the first fluid so as to create the gradient. The device (80) also comprises a second zone (92) so as to allow an exchange of heat between the second fluid and the first fluid. The device (80) is designed so that the first fluid passes through it by travelling in a single direction, referred to as first direction (L), wherein the first zone (91) and the second zone (92) are situated in series in the first direction (L).

Abstract: A piezoelectric element unit comprises an element body having internal electrodes laminated with piezoelectric layers therebetween and a pair of external electrodes electrically connected to the internal electrodes and an electric connection part for connecting a wiring part to the external electrodes. The electric connection part is composed of a conductive resin adhesive part and the conductive resin adhesive part is covered by a resin part.

Abstract: A multi-layer piezoelectric element includes: a stacked body comprising an active section, and inactive sections disposed at opposite ends in a stacking direction of the active section; an electrically-conductive bonding material disposed on a side surface of the stacked body from the active section to the inactive sections; and an external electrode plate attached, through the electrically-conductive bonding material, to the side surface of the stacked body, a spacing between a side surface of at least one of the inactive sections and the external electrode plate being wider than a spacing between a side surface of the active section and the external electrode plate, and the electrically-conductive bonding material situated between the side surface of at least one of the inactive sections and the external electrode plate being larger in thickness than the electrically-conductive bonding material situated between the side surface of the active section and the external electrode plate.

Abstract: A piezoelectric actuator device, with at least one piezoelectric transducer which has at least one piezoelectric body and an electrode unit assigned to this piezoelectric body, with overall capacitance and including two electrodes lying opposite one another. At least one of the two electrodes of the electrode unit is divided into several individual sub-electrodes, spaced apart from one another and forming with the electrode lying opposite several sub-electrode pairs defining in each case a partial capacitance of the overall capacitance. A separate current-limiting resistor active during charge flow is connected in series to each sub-electrode pair. A valve, for controlling a fluid, is equipped with such an actuator device.

Abstract: The present invention relates to a zinc oxide-cellulose nanocomposite made of cellulose and zinc oxide nanoparticles and to a preparation method thereof. The nanocomposite of the present invention is prepared by producing zinc oxide nanoparticles as seeds on the surface and/or inside of a cellulose film and growing the seeds into zinc oxide crystals to form a zinc oxide layer strongly attached to the cellulose film. The nanocomposite of the present invention has significantly improved piezoelectricity compared to simple cellulose piezoelectric paper and may be used for LEDs and photovoltaic power generation devices thanks to zinc oxide doped therein.

Abstract: A piezoelectric ceramic includes: a metal oxide represented by General Formula (1); and 0.04 parts by weight or more and 0.36 parts by weight or less of Mn and 0.042 parts by weight or more and 0.850 parts by weight or less of Bi on a metal basis relative to 100 parts by weight of the metal oxide, wherein the piezoelectric ceramic includes a plurality of first crystal grains having a perovskite structure, and a plurality of second crystal grains provided at a grain boundary between the first crystal grains and having a crystal structure different from that of the first crystal grain, and the second crystal grain mainly contains at least one metal oxide selected from Ba4Ti12O27 and Ba6Ti17O40. (Ba1-xCax)a(Ti1-yZry)O3??(1) (where 0.09?x?0.30, 0.025?y?0.085, 0.986?a?1.

Abstract: According to one embodiment, a method of manufacturing a magnetic memory device includes a stack structure formed of a plurality of layers including a magnetic layer, the method includes forming a lower structure film including at least one layer, etching the lower structure film to form a lower structure of the stack structure, forming an upper structure film including at least one layer on a region including the lower structure, and etching the upper structure film to form an upper structure of the stack structure on the lower structure.

Abstract: Embodiments are directed to an electromagnetic memory device having a memory cell and an encapsulation layer formed over the memory cell. The memory cell may include a magnetic tunnel junction (MTJ), and the encapsulation layer may be formed from a layer of hydrogenated amorphous silicon. Amorphous silicon improves the coercivity of the MTJ but by itself is conductive. Adding hydrogen to amorphous silicon passivates dangling bonds of the amorphous silicon, thereby reducing the ability of the resulting hydrogenated amorphous silicon layer to provide a parasitic current path to the MTJ. The hydrogenated amorphous silicon layer may be formed using a plasma-enhanced chemical vapor deposition, which can be tuned to enable a hydrogen level of approximately 10 to approximately 20 percent. By keeping subsequent processing operations at or below about 400 Celsius, the resulting layer of hydrogenated amorphous silicon can maintain its hydrogen level of approximately 10 to 20 percent.

Abstract: According to one embodiment, a magnetic memory element includes a first magnetic layer, a second magnetic layer, a nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, an electrode disposed on a side surface of the first magnetic layer, and a first insulation layer disposed between the first magnetic layer and the electrode, and including a first region with a first film thickness and a second region with a second film thickness which is less than the first film thickness.

Abstract: A magnetoresistive-based device and method of manufacturing a magnetoresistive-based device using a plurality of masks. The magnetoresistive-based device includes magnetic material layers formed between a first electrically conductive layer and a second electrically conductive layer, the magnetic materials layers including a tunnel barrier layer formed between a first magnetic materials layer and a second magnetic materials layer. In one embodiment, the method may include removing the first electrically conductive layer and the first magnetic materials layer unprotected by a first mask, to form a first electrode and a first magnetic materials, respectively, and removing the tunnel barrier layer and the second magnetic materials layer unprotected by a second mask to form a tunnel barrier and second magnetic materials, and the second electrically conductive layer unprotected by the second mask to form, and a second electrode.

Abstract: According to one embodiment, a semiconductor memory device includes a magnetic tunnel junction (MTJ) element includes a first magnetic layer, a second magnetic layer and a non-magnetic layer between the first and second magnetic layers, a contact layer formed underneath the MTJ element, the contact layer being formed of a first material, and a first layer formed around the contact layer, wherein the first layer in contact with a side surface of the contact layer, has a first width extending parallel to a stacking direction of the MTJ element, and a second width extending perpendicularly to the direction of extension of the first width, the second width being less than the first width.

Abstract: A method of forming a ferroelectric memory cell. The method comprises forming an electrode material exhibiting a desired dominant crystallographic orientation. A hafnium-based material is formed over the electrode material and the hafnium-based material is crystallized to induce formation of a ferroelectric material having a desired crystallographic orientation. Additional methods are also described, as are semiconductor device structures including the ferroelectric material.

Abstract: Embodiments of the present disclosure describe techniques and configurations for increasing thermal insulation in a resistance change memory device, also known as a phase change memory (PCM) device. In one embodiment, an apparatus includes a storage structure of a PCM device, the storage structure having a chalcogenide material, an electrode having an electrically conductive material, the electrode having a first surface that is directly coupled with the storage structure, and a dielectric film having a dielectric material, the dielectric film being directly coupled with a second surface of the electrode that is disposed opposite to the first surface. Other embodiments may be described and/or claimed.

Abstract: Embodiments disclosed herein may include depositing a storage component material over and/or in a trench in a dielectric material, including depositing the storage component material on approximately vertical walls of the trench and a bottom of the trench. Embodiments may also include etching the storage component material so that at least a portion of the storage component material remains on the approximately vertical walls and the bottom of the trench, wherein the trench is contacting an electrode and a selector such that storage component material on the bottom of the trench contacts the electrode.

Abstract: A thermally optimized phase change memory cell includes a phase change material element disposed between first and second electrodes. The second electrode includes a thermally insulating region having a first thermal resistivity over the first electrode and a metallic contact region interposed between the phase change material element and the thermally insulating region, where the metallic contact layer has a second thermal resistivity lower than the first thermal resistivity.

Abstract: An organic EL display panel includes a substrate and a bank layer on the substrate. The bank layer defines a first sub-pixel region and a second sub-pixel region that have elongated shapes and different light-emission colors from each other. The bank layer has a plurality of concave portions. When an imaginary line J is drawn in a lateral direction (X direction) from a center point in a longitudinal direction (Y direction) of the first sub-pixel region, an intersection point out of two intersection points where the imaginary line and an edge of the first sub-pixel region intersect is defined as a reference point. A minimum distance between the reference point and an edge of one of the concave portions closest to the reference point is shorter than a minimum distance between the reference point and an edge of the second sub-pixel region closest to the reference point.

Abstract: The present invention relates to polymers comprising one or more (repeating) unit(s) of the formula (I), wherein Y is a group of formula (II); and their use as IR absorber, organic semiconductor in organic devices, especially in organic photovoltaics and photodiodes, or in a device containing a diode and/or an organic field effect transistor. The polymers according to the invention can have excellent solubility in organic solvents 10 and excellent film-forming properties. In addition, high efficiency of energy conversion, excellent field-effect mobility, good on/off current ratios and/or excellent stability can be observed, when the polymers according to the invention are used in organic field effect transistors, organic photovoltaics and photodiodes.

Abstract: A polymer of an embodiment includes a recurring unit containing at least one bivalent group selected from among a formula (1), a formula (2), a formula (3), and a formula (4). Z1 indicates carbon having an R1 group, nitrogen, or the like. Z2 indicates oxygen, sulfur, selenium, nitrogen having an R2 group, or the like. The R1 and R2 groups indicate hydrogen, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted heteroaryl group, or the like, X indicates oxygen, sulfur, selenium, or the like.

Abstract: The disclosure relates to a light emitting diode. The light emitting diode includes a first semiconductor layer, an active layer, and a second semiconductor layer, a first electrode, a second electrode and a nanotube film. The first semiconductor layer, the active layer, and the second semiconductor layer are stacked with each other in that order. The first electrode is electrically connected with the second semiconductor layer. The second electrode is electrically connected with the first semiconductor layer. The nanotube film is located on one of the first semiconductor layer, the active layer and the second semiconductor layer. The nanotube film comprises a number of nanotubes orderly arranged and combined with each other by ionic bonds.

Abstract: The present invention discloses an organic material is represented by the following formula (1), the organic EL device employing the organic material as fluorescent emitting guest can display good performance like as lower driving voltage and power consumption, increasing efficiency and half-life time. wherein A, B ring, X, m, n, p and R1 to R6 are the same definition as described in the present invention.

Abstract: To provide a novel amine compound which is especially suitable for a hole transport material for organic EL devices, and an organic EL device which employs such an amine compound and is excellent in the driving voltage, luminous efficiency and device lifetime An amine compound represented by the formula (1): (wherein X is a sulfur atom or an oxygen atom, each of R1 to R10 which are independent of one another, is a hydrogen atom, a deuterium atom or a phenyl group, and each of Ar1 and Ar2 which are independent of each other, is a C6-18 aromatic hydrocarbon group, a dibenzothienyl group or a dibenzofuranyl group, which, each independently, may have a substituent consisting of a methyl group, a methoxy group, a dibenzothienyl group, a dibenzofuranyl group or a 9-carbazolyl group.).

Abstract: A light-emitting element includes an anode, a cathode, and a light emission layer. The light emission layer is arranged between the anode and the cathode and configured to emit light by energization between the anode and the cathode. The light emission layer includes a compound represented by a general formula NIR-D as a light emission material and a compound represented by a formula IRH-1 as a host material of the light emission material. The general formula NIR-D is in which each R independently indicates group comprising a phenyl group, a thiophenyl group, a furyl group, or at least one species of derivatives thereof. The formula IRH-1 is in which n indicates a natural number 1 to 12, and each R independently indicates a hydrogen atom, an alkyl group, an optionally substituted aryl group, or an arylamino group.

Abstract: Objects of the present invention are to provide: a light-emitting element having a long lifetime and good emission efficiency and drive voltage. One embodiment of the invention is a light-emitting element including, between an anode and a cathode, at least a stack structure in which a first layer, a second layer, and a light-emitting layer are provided in order from the anode side. The first layer includes a first organic compound and an electron-accepting compound. The second layer includes a second organic compound having a HOMO level differing from the HOMO level of the first organic compound by from ?0.2 eV to +0.2 eV. The light-emitting layer includes a third organic compound having a HOMO level differing from the HOMO level of the second organic compound by from ?0.2 eV to +0.2 eV and a light-emitting substance having a hole-trapping property with respect to the third organic compound.

Abstract: The present invention relates to a novel organic electroluminescent compound and an organic electroluminescent device comprising the same. The organic electroluminescent compound of the present invention has high luminous efficiency, and thus can be used as a host in a light-emitting layer; and an organic electroluminescent device comprising the organic electroluminescent compounds of the present invention has long operating lifespan, provides improved current efficiency and power efficiency, and gives colors having high purity.

Abstract: In an aspect, an organic compound and an organic light-emitting diode (OLED) including the same are provided.

Abstract: The present invention discloses a novel phenanthroline-based compound is represented by the following formula(I), the organic EL device employing the phenanthroline-based compound as hole blocking material/electron transport material or phosphorescent host can display good performance. L, m, n, X, Y and R1 to R20 each have the same meaning as described in the present invention.

Abstract: Disclosed are a nitrogen-containing polycyclic compound and an organic electroluminescent device including the same.

Abstract: Platinum and palladium complexes are disclosed that can be useful as narrow band phosphorescent emitters. Also disclosed are methods for preparing and using the platinum and palladium complexes.

Abstract: A package thin film and a manufacturing method thereof, a light emitting device, a display panel and a display device are provided. The package thin film may comprise: a nano material layer or a polycation organic material layer, a moisture absorption layer formed on the nano material layer or the polycation organic material layer, a sealing layer for sealing the nano material layer or the polycation organic material layer and the moisture absorption layer. The package structure provided by embodiments of the present invention is formed by alternate assembly of materials (the nano material layer or the polycation organic material layer and the moisture absorption layer) with different charges.

Abstract: Disclosed is an organic EL panel translucent substrate that can prevent or reduce the color gap/coloring of an organic EL panel. In order to achieve the above object, organic EL panel translucent substrate 201 is formed of resins 203 and 204 and is substantially optically isotropic in its in-plane direction and thickness direction.

Abstract: Disclosed is a rollable organic light emitting display system capable of protecting an organic light emitting display device from an external impact. The rollable organic light emitting display system has an organic light emitting diode layer between two substrates, wherein the two substrates are capable of being rolled or unrolled, includes a protection film covering a lateral surface of at least one of the substrates so as to prevent the lateral surface of the at least one substrate from being damaged by an external impact when the two substrates are unrolled and the lateral surface of the two substrates is exposed to the external.

Abstract: A method of fabricating a semiconductor device includes depositing a dielectric layer on a substrate and a nanomaterial on the dielectric layer. The method also includes depositing a thin metal layer on the nanomaterial and removing a portion of the thin metal layer from a gate area. The method also includes depositing a gate dielectric layer. The method also includes selectively removing the gate dielectric layer from a source contact region and a drain contact region. The method also includes patterning a gate electrode, a source electrode, and a drain electrode.

Abstract: An organic thin film transistor, a preparing method thereof, and a preparation equipment. The preparation equipment of an organic thin film transistor comprises: forming a gate electrode, a gate insulating layer, an organic semiconductor layer, and source-drain electrodes on a substrate; the step of forming the organic semiconductor layer comprises: blade-coating a solution in which an organic semiconductor material used to forming the organic semiconductor layer is dissolved to form the organic semiconductor layer. The preparing method can avoid the difference between the edge and the center of the substrate caused by the impact of centripetal force when a spin-coating method is applied, so that the yield of the organic thin film transistor devices is improved.

Abstract: A light-emitting element having high external quantum efficiency is provided. A light-emitting element having a long lifetime is provided. A light-emitting layer is provided between a pair of electrodes. The light-emitting layer is a stack of a first light-emitting layer, which contains at least a first phosphorescent compound, a first organic compound having an electron-transport property, and a second organic compound having a hole-transport property and is provided on the anode side, and a second light-emitting layer, which contains at least a second phosphorescent compound and the first organic compound having an electron-transport property. A combination of the first organic compound and the second organic compound forms an exciplex.

Abstract: Provided are a substrate for an organic electronic device (OED), an organic electronic system, a method of manufacturing the system or substrate, and lighting. The substrate for an OED may be increased in durability by preventing penetration of an external material such as moisture or oxygen, and thus an organic electronic system having excellent light extraction efficiency may be formed. In addition, since the substrate may be stably attached to an encapsulating structure sealing the organic electronic system, the device may have excellent durability with respect to abrasion of an electrode layer or pressure applied from an external environment. In addition, surface hardness of an external terminal of the organic electronic system may be maintained at a suitable level.

Abstract: The present disclosure relates to a flexible electrode and a method for manufacturing the same, an electronic skin and a flexible display device, the conductive polymer is solution treated by the ionic liquid, the nano-metal material is added to the solution treated conductive polymer to form the dispersed liquid of the conductive polymer containing the nano-metal material, the dispersed liquid is transferred to the substrate for curing to obtain the flexible electrode. The flexible electrode makes use of the flexible property of the conductive polymer such that the formed flexible electrode has good ductility and resilience. And the nano-metal material is dispersed in the conductive polymer such that the nano-metal material remedies the defect of low conductive property of the conductive polymeric material, and the flexible electrode has good conductivity.

Abstract: A FET is formed on a semiconductor substrate, a curved surface having a radius of curvature is formed on an upper end of an insulation, a portion of a first electrode is exposed corresponding to the curved surface to form an inclined surface, and a region defining a luminescent region is subjected to etching to expose the first electrode. Luminescence emitted from an organic chemical compound layer is reflected by the inclined surface of the first electrode to increase a total quantity of luminescence taken out in a certain direction.

Abstract: The present invention discloses a display panel, a manufacturing method thereof and a display device. The display panel comprises a first substrate divided into a display area and a non-display area surrounding the display area, a plurality of sub-pixel units are provided on a part of the first substrate corresponding to the display area, a photo spacer is provided between two adjacent sub-pixel units and comprises a base and a plurality of protruding structures provided on the base, and the base is made from material including In+ ions which are replaceable with H+ ions. For the display panel, the photo spacers are manufactured using Haze phenomenon generated by contacting ITO thin film with ionized H2, so as to provide support between the encapsulation substrate and the evaporated substrate encapsulated by frit seal and effectively protect the OLED devices from damage, and therefore, the display panel has better performance.

Abstract: The present invention is aiming to provide a gas barrier film having excellent gas barrier properties and also having superior transparency and the like, and an efficient method for producing such a gas barrier film. The present invention provides a gas barrier film having a gas barrier layer on a base material, and a method for producing such a gas barrier film, in which the gas barrier layer includes, from the surface side toward the base material side, a first region and a second region having different refractive indices, the value of the refractive index in the first region is adjusted to a value within the range of 1.50 to 1.68, and the value of the refractive index in the second region is adjusted to a value within the range of 1.40 to below 1.50.

Abstract: An OLED device and a preparation method thereof are provided by the present invention; the OLED device comprises an OLED device body and a protective layer which coats outside the OLED device body and is configured to package the OLED device body; the chemical formula of the protective layer is SiOXCYHZ, wherein the value of X is 0.5˜2.5, the value of Y is 0.5˜2.0, and the value of Z is 2˜8. In the present invention, the protective layer is deposited outside the OLED device to isolate water vapor.