Abstract: The present disclosure provides a method of manufacturing a semiconductor device. Furthermore the present disclosure provides a photovoltaic device and a light emitting diode manufactured in accordance with the method. The method comprises the steps of forming a germanium layer using deposition techniques compatible with high-volume, low-cost manufacturing, such as magnetron sputtering, and exposing the germanium layer to laser light to reduce the amount of defects in the germanium layer. After the method is performed the germanium layer can be used as a virtual germanium substrate for the growth of III-V materials.

Abstract: In some embodiments, an inline substrate processing tool may include a substrate carrier having a plurality of slots configured to retain a plurality of substrates parallel to each other when disposed in the slots, a first substrate processing module and a second substrate processing module disposed in a linear arrangement, wherein each substrate processing module includes an enclosure and a track that supports the substrate carrier and provides a path for the substrate carrier to move linearly through the first and second substrate processing modules, and a first gas cap disposed between the first and second substrate processing modules, wherein the first gas cap includes a first process gas conduit to provide a first process gas to the first substrate processing module, and a second process gas conduit to provide a second process gas to the second substrate processing module.

Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a pad on the plurality of compound semiconductor layers; an electrode layer under the plurality of compound semiconductor layers; and a supporting member disposed under the plurality of compound semiconductor layers and corresponding to the pad.

Abstract: A method of fabricating a substrate free light emitting diode (LED), includes arranging LED dies on a tape to form an LED wafer assembly, molding an encapsulation structure over at least one of the LED dies on a first side of the LED wafer assembly, removing the tape, forming a dielectric layer on a second side of the LED wafer assembly, forming an oversized contact region on the dielectric layer to form a virtual LED wafer assembly, and singulating the virtual LED wafer assembly into predetermined regions including at least one LED. The tape can be a carrier tape or a saw tape. Several LED dies can also be electrically coupled before the virtual LED wafer assembly is singulated into predetermined regions including at the electrically coupled LED dies.

Abstract: The present invention relates to a substrate for the color conversion of a light-emitting diode and a manufacturing method therefor and, more specifically, to a substrate for the color conversion of a light-emitting diode and a manufacturing method therefor, which enable a quantum dot (QD) and a structure, in which the QD is supported, to have a color conversion function for implementing white light.

Abstract: A light-emitting device package includes a plurality of luminescent structures arranged spaced apart from each other in a horizontal direction, an intermediate layer on the plurality of luminescent structures, and wavelength conversion layers on the intermediate layer, the wavelength conversion layers vertically overlapping separate, respective luminescent structures of the plurality of luminescent structures. The intermediate layer may include a plurality of layers, the plurality of layers associated with different refractive indexes, respectively. The intermediate layer may include a plurality of sets of holes, each set of holes may include a separate plurality of holes, and each wavelength conversion layer may vertically overlap a separate set of holes on the intermediate layer.

Abstract: A method for producing a lighting device is provided. According to the method, a plurality of semiconductor emitters arranged alongside one another are embedded in a light-transmissive filling compound apart from a side having their electrical connections, trenches are introduced into the light-transmissive filling compound at the side having the electrical connections between at least two semiconductor emitters, the side of the light-transmissive filling compound having the electrical connections, including the electrical connections, is covered with a dielectric material, electrical lines are led through the dielectric material to the electrical connections, and at least some of the trenches are severed.

Abstract: A lead frame includes a bonding part to bond to a semiconductor chip, a first trench in the bonding part along a first central axis, the first central axis dividing the bonding part into two parts, and second trenches in the bonding part along a second central axis, the second central axis dividing the bonding part into two parts, and the first and second central axes vertically intersecting each other.

Abstract: In some embodiments, an interconnect electrical connects a light emitter to wiring on a substrate. The interconnect may be deposited by 3D printing and lays flat on the light emitter and substrate. In some embodiments, the interconnect has a generally rectangular or oval cross-sectional profile and extends above the light emitter to a height of about 50 ?m or less, or about 35 ?m or less. This small height allows close spacing between an overlying optical structure and the light emitter, thereby providing high efficiency in the injection of light from the light emitter into the optical structure, such as a light pipe.

Abstract: A light emitting device including a package body having a first cavity; an electrode having a first electrode and a second electrode in the package body; at least one light emitting chip on the first electrode; a resin material in the first cavity; and a lens on the package body and the at least one light emitting chip. Further, the first electrode and the second electrode are separated by the package body, the package body comprises a first stepped portion exposed between the first electrode and the second electrode, the first electrode comprises a second cavity, and the at least one light emitting chip is disposed on the second cavity of the first electrode.

Abstract: A wiring substrate includes ceramic layers and a conductive member. The ceramic layers have an uppermost ceramic layer and a lowermost ceramic layer. The conductive member includes an upper conductive layer, an internal conductive layer, a lower conductive layer, vias, and a covering layer. The upper conductive layer is disposed on an upper surface of the uppermost ceramic layer. The internal conductive layer is interposed between the ceramic layers. The lower conductive layer is disposed on a lower surface of the lowermost ceramic layer. The vias connect the upper conductive layer, the internal conductive layer, and the lower connective layer. The covering layer covers a portion of the upper conductive layer. The upper conductive layer includes a covered region covered with the covering layer and an element mount region. An upper surface of the element mount region is higher than an upper surface of the covered portion.

Abstract: A light emitting device includes a substrate, a light emitting element, a sealing member, a light transmissive member and a heat dissipation terminal. The substrate has a first main surface, a second main surface, and a mounting surface that is adjacent to at least the second main surface. The substrate includes an insulating base material and a pair of connection terminals. The light emitting element is mounted on the first main surface of the substrate. The sealing member is in contact with at least a part of a side surface of the light emitting element and is formed substantially in the same plane as the substrate on the mounting surface. The heat dissipation terminal is arranged generally in the center on the second main surface of the substrate and has a recess portion as viewed along a direction normal to the second main surface.

Abstract: An electric generator (1) comprises a thermoelectric generator (2) and is characterized in that said thermoelectric generator (2) is provided with two add-on units (3, 4) which are separate from each other, said two add-on units (3, 4) having different thermal properties.

Abstract: A honeycomb sandwich structure includes a main body portion having a first skin material, a second skin material, and a honeycomb core sandwiched between the first skin material and the second skin material, and a thermoelectric conversion module that generates power using a temperature difference between a high temperature side module front surface and a low temperature side module rear surface. The thermoelectric conversion module is embedded in a main body portion such that at least one of the module front surface and the module rear surface is in a state being exposed from the main body portion, and as a result, a temperature difference is generated between the module front surface and the module rear surface.

Abstract: Flexible and foldable paper-substrate thermoelectric generators (TEGs) and methods for making the paper-substrate TEGs are disclosed. A method includes depositing a plurality of thermocouples in series on a paper substrate to create a paper-substrate TEG, wherein the plurality of thermocouples is deposited between two contact points of the paper-substrate TEG. The method may also include setting the power density and maximum achievable temperature gradient of the paper-substrate TEG by folding the paper-substrate TEG. A paper-substrate TEG apparatus may include a paper substrate and a plurality of thermocouples deposited in series on the paper substrate between two contact points of the paper-substrate TEG, wherein the power density and maximum achievable temperature gradient of the paper-substrate TEG is set by folding the paper-substrate TEG.

Abstract: The invention relates to a handle for a cooking vessel that includes at least one thermoelectric generator. The thermoelectric generator includes at least a first contact surface thermally connected to a heat sink and the heat sink is formed from a material that undergoes a phase transition when heated to temperatures varying between 50° C. and 70° C.

Abstract: An acoustic resonator includes a resonating part including a piezoelectric layer located on a first electrode and a second electrode located on the piezoelectric layer; and a frame located on the second electrode along an edge of the resonating part, wherein the frame includes an inner surface and an outer surface, and the inner surface includes two inclined surfaces.

Abstract: An ultrasonic device includes: an element substrate including an ultrasonic transducer and a first connection electrode connected to the ultrasonic transducer; a reinforcing plate that is bonded to the element substrate to reinforce the element substrate; and a second connection electrode provided on the reinforcing plate. The first and second connection electrodes are connected to each other in a bonding portion between the element substrate and the reinforcing plate.

Abstract: An electronic component includes external electrodes formed on an external surface of a body to be electrically connected to internal electrodes, and containing metal particles and glass, wherein the metal particles include particles having a polyhedral shape.

Abstract: A method of forming a pillar includes masking a photoresist material using a reticle and a developer having a polarity opposite that of the photoresist to provide an island of photoresist material. A layer under the island of photoresist material is etched to establish a pillar defined by the island of photoresist material.

Abstract: Systems and methods are disclosed to form a resistive random access memory (RRAM) by forming a first metal electrode layer; depositing an insulator above the metal electrode layer and etching the insulator to expose one or more metal portions; depositing a Pr1-XCaXMnOS (PCMO) layer, in an electrically biased sputtering chamber, above the insulator and the metal portions, to form one or more self-aligned RRAM cells above the first metal electrode; and depositing a second metal electrode layer above the PCMO layer.

Abstract: A variable resistance memory device includes a first electrode layer and a selection device layer on the first electrode layer. The selection device layer includes a first chalcogenide material obtained by doping at least one of boron or carbon into a chalcogenide switching material. A second electrode layer is on the selection device layer. A variable resistance layer is on the second electrode layer. The variable resistance layer includes a second chalcogenide material including at least one different element from the chalcogenide switching material. A third electrode layer is on the variable resistance layer.

Abstract: A method for forming a thin film comprising a metal, metal compound, or metal oxide on a substrate, which method comprises forming one or more thin film layers of a metal or metal oxide by a deposition process employing reactant precursors and/or relative amounts thereof which are selected to deposit a thin film layer with a controlled amount of dopant derived from at least one reactant precursor.

Abstract: Resistive RAM (RRAM) devices having increased uniformity and related manufacturing methods are described. Greater uniformity of performance across an entire chip that includes larger numbers of RRAM cells can be achieved by uniformly creating enhanced channels in the switching layers through the use of radiation damage. The radiation, according to various described embodiments, can be in the form of ions, electromagnetic photons, neutral particles, electrons, and ultrasound.

Abstract: In the examples provided herein, a device is described that has a stack of structure layers including a first structure layer and a second structure layer that are different materials, where the first structure layer is positioned higher in the stack than the second structure layer. The device also has a first sidewall spacer deposited conformally and circumferentially around an upper portion of the stack that includes the first structure layer. Further, the device has a second sidewall spacer deposited conformally and circumferentially around the first sidewall spacer and an additional portion of the stack that includes the second structure layer, where a height of the first sidewall spacer along the stack is different from a height of the second sidewall spacer.

Abstract: A memory device including first conductive lines spaced apart from each other and extending in a first direction; second conductive lines spaced apart from each other and extending in a second direction that is different from the first direction; first memory cells having a structure that includes a selection device layer, a middle electrode layer, a variable resistance layer, and a top electrode layer; and insulating structures arranged alternately with the first memory cells in the second direction under the second conductive lines, wherein the first insulating structures have a top surface that is higher than a top surface of the first top electrode layer, and the second conductive lines have a structure that includes convex and concave portions, the convex portions being connected to the top surface of the top electrode layer and the concave portions accommodating the insulating structures between the convex portions.

Abstract: Provided are a memory device and a method of manufacturing the same. Memory cells of the memory device are formed separately from first electrode lines and second electrode lines, wherein the second electrode lines over the memory cells are formed by a damascene process, thereby avoiding complications associated with CMP being excessively or insufficiently performed on an insulation layer over the memory cells.

Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, precursors, in a gaseous form, may be utilized in a chamber to build a film of correlated electron materials comprising various impedance characteristics.

Abstract: The present invention relates to a charge transporting semi-conducting material. The charge transporting semi-conducting material may include optionally at least one electrical dopant, and a branched or cross-linked charge transporting polymer that includes 1,2,3-triazole cross-linking units of at least one of the general formulae Ia and/or Ib herein. The charge transporting polymer can include ethylene building units substituted with at least one pending side group including a conjugated system of delocalised electrons. Also provided herein are processes for obtaining the charge transporting semi-conducting material.

Abstract: An aromatic compound represented by chemical formula 1 and an organic light-emitting diode including the same are provided. In chemical formula 1, A, Ar2, R1, R2, and m are as described in the embodiments.

Abstract: A magnetic material section is provided on a mask substrate so as to be interposed between Y aperture lines of the mask substrate and between X aperture line of the mask substrate. A portion of the magnetic material section which portion is interposed between the X aperture lines has a first thickness and a second thickness which is less than the first thickness, the first thickness being that of each sub-portion thereof which is positioned between mutually adjacent ones of the Y aperture lines, the second thickness being that of each sub-portion thereof which is positioned between apertures which are mutually adjacent in a Y direction.

Abstract: A method of manufacturing an evaporation mask, includes preparing a semi-finished body of an evaporation mask including a reinforcing bar and a film having an area larger than an area of the reinforcing bar, forming an opening pattern in a region, which is prevented from planarly overlapping with the reinforcing bar, of the film, and forming at least one projecting portion in a region, which is on a surface opposite to the reinforcing bar and which planarly overlaps with the reinforcing bar, of the film.

Abstract: A method of forming a semiconductor film at pressure between 10?5 atm and 10 atm in the presence of a substrate includes (i) providing a precursor material in a reaction container; (ii) arranging the substrate on the reaction container such that a conductive surface of the substrate is facing towards the precursor material; and (iii) conducting a heat treatment to deposit a semiconductor layer on the conductive surface of the substrate. A semiconductor film is obtained from this method and a device comprising such semiconductor film is also provided.

Abstract: A light-emitting electrochemical cell 10 includes an emitting layer 12 and electrodes 13 and 14, one on each side of the emitting layer 12. The emitting layer 12 contains a light-emitting material and an ionic compound. The ionic compound has general formula (1), wherein M is N or P; R1, R2, R3, and R4 each independently represent a C1-C20 saturated aliphatic group; and X is preferably an anion having a phosphoric ester bond or a sulfuric ester bond. The light-emitting material is preferably an organic light-emitting polymer, a metal complex, an organic low molecular compound, or a quantum dot.

Abstract: A method of fabricating a carbon nanotube based device, including forming a trench having a bottom surface and sidewalls on a substrate, selectively depositing a bi-functional compound having two reactive moieties in the trench, wherein a first of the two reactive moieties selectively binds to the bottom surface, converting a second of the two reactive moieties to a diazonium salt; and reacting the diazonium salt with a dispersion of carbon nanotubes to form a carbon nanotube layer bound to the bottom surface of the trench.

Abstract: A method of fabricating a carbon nanotube based device, including forming a trench having a bottom surface and sidewalls on a substrate, selectively depositing a bi-functional compound having two reactive moieties in the trench, wherein a first of the two reactive moieties selectively binds to the bottom surface, converting a second of the two reactive moieties to a diazonium salt; and reacting the diazonium salt with a dispersion of carbon nanotubes to form a carbon nanotube layer bound to the bottom surface of the trench.

Abstract: A carbon nanotube composite has an organic substance attached to at least a part of a surface thereof. At least one functional group selected from a hydroxyl group, a carboxy group, an amino group, a mercapto group, a sulfo group, a phosphonic acid group, an organic or inorganic salt thereof, a formyl group, a maleimide group and a succinimide group is contained in at least a part of the carbon nanotube composite.

Abstract: An organic light-emitting apparatus includes an organic light-emitting device and a magnetic field-applying member that applies a magnetic field to the organic light-emitting device. The organic light-emitting device includes a host and a dopant.

Abstract: An organic light-emitting device including a first electrode, a second electrode facing the first electrode, an emission layer between the first electrode and the second electrode, a hole transport region between the first electrode and the emission layer, and an electron transport region between the emission layer and the second electrode; wherein the electron transport region comprises at least one first compound, the emission layer comprises at least one second compound, the first compound is represented by Formula 1, and the second compound is represented by one selected from Formulae 2-1, 2-2, and 2-3:

Abstract: The present invention provides an organic electroluminescence device including a cathode, an anode, and an organic thin film layer which is formed of one layer or plural layers at least containing a light emitting layer and which is sandwiched between the cathode and an anode, the device further includes an electron transporting layer between the light emitting layer and the cathode, wherein the electron transporting layer contains at least a specific compound (1) and a specific compound (2), and the compound (1) and the compound (2) satisfy the expression (A): Electron mobility of compound (1)>Electron mobility of compound (2)>10?7 cm2/Vs. The organic electroluminescence device has a high light emission efficiency and has a more prolonged lifetime. The present invention also provides an electronic device provided with the organic EL device.

Abstract: A thin film semiconductor comprising a compound of formula I or II wherein: R1 and R2, at each occurrence, independently are selected from a C1-30 alkyl group, a C2-30 alkenyl group, a C2-30 alkynyl group and a C1-30 haloalkyl group, R3, R4, R5, and R6 independently are H or an electron-withdrawing group, wherein at least one of R3, R4, R5, and R6 is an electron-withdrawing group; and a non-conductive polymer.

Abstract: The present invention relates to novel light-emitting materials. These materials comprise a side chain that includes a fully deuterated or partially deuterated alkyl chain. This new side chain could improve device lifetime compared to nondeuterated side chains.

Abstract: Provided is an organic electronic element comprising a hole transport layer containing a compound of Formula (1) and an emitting auxiliary layer containing a compound of Formula (2), capable of improving the light emitting efficiency, stability, and life span of an electronic device using the same.

Abstract: An organic light-emitting device including: a first electrode; a second electrode facing the first electrode; and an organic layer between the first electrode and the second electrode and including an emission layer, wherein the organic layer includes: i) a hole transport region between the first electrode and the emission layer, and including at least one selected from a hole injection layer, a hole transport layer, an emission auxiliary layer, and an electron blocking layer, and ii) an electron transport region between the emission layer and the second electrode and including an electron transport layer, in addition to at least one selected from a hole blocking layer, an electron control layer, a buffer layer, and an electron injection layer, wherein the electron transport region includes a compound represented by Formula 1:

Abstract: Described herein are molecules for use in organic light emitting diodes. Example molecules comprise at least one acceptor moiety A, at least one donor moiety D, and optionally one or more bridge moieties B. Each moiety A is covalently attached to either the moiety B or the moiety D, each moiety D is covalently attached to either the moiety B or the moiety A, and each moiety B is covalently attached to at least one moiety A and at least one moiety D. Values and preferred values of moieties A, D, and B are defined herein.

Abstract: An organic light emitting device including a first electrode; a self-assembled monolayer on the first electrode; a hole control layer on the self-assembled monolayer; a light emitting layer on the hole control layer; an electron control layer on the light emitting layer; and a second electrode on the electron control layer, wherein the self-assembled monolayer includes a plurality of organic molecules, each of the plurality of organic molecules having a head bonded to the first electrode, a terminal end adjacent to the hole control layer, and a tail connecting the head with the terminal end.

Abstract: A compound of the general formula (I), a process for the production of the compound and its use in electronic devices, especially electroluminescent devices. Improved efficiency, stability, manufacturability, or spectral characteristics of electroluminescent devices are provided when the compound of formula I is used as host material for phosphorescent emitters in electroluminescent devices.

Abstract: A flexible display device including a hard coating layer, the hard coating layer containing first hard coating oligomers, second hard coating oligomers having greater molecular weights than the first hard coating oligomers, a cross-linker, and a photoinitiator. The first hard coating oligomers may maintain the hardness of the hard coating layer and the second hard coating oligomers may improve the flexibility of the hard coating layer, such that damage to the hard coating layer may be prevented or reduced even when the flexible display device is bent.

Abstract: An OLED and a method for producing an OLED are disclosed. In an embodiment, the OLED includes a substrate and an organic layer stack with at least one active light-generating layer, which is suitable for generating electromagnetic radiation, wherein the organic layer stack is arranged between a first electrode and a second electrode. The OLED further includes a buffer layer arranged between the substrate and the first electrode, wherein the buffer layer includes an organic material, wherein a polymeric planarization layer is in direct contact with the substrate, wherein the buffer layer is in direct contact with the polymeric planarization layer, and wherein the first electrode is in direct contact with the buffer layer.

Abstract: A field effect transistor including a dielectric layer on a substrate, a nano-structure material (NSM) layer on the dielectric layer, a source electrode and a drain electrode formed on the NSM layer, a gate dielectric formed on at least a portion of the NSM layer between the source electrode and the drain electrode, a T-shaped gate electrode formed between the source electrode and the drain electrode, where the NSM layer forms a channel of the FET, and a doping layer on the NSM layer extending at least from the sidewall of the source electrode to a first sidewall of the gate dielectric, and from a sidewall of the drain electrode to a second sidewall of the gate dielectric.