Abstract: A method for the practice-oriented, operationally reliable production of castings of an AlCu alloy which consists of Cu, Mn, Zr, Fe, Si, Ti, V, remainder Al and unavoidable impurities. A melt which has been melted according to this alloy formula is kept at temperature for several hours and then mixed vigorously at least once. Thereafter, the melt is cast in portions into the respective casting which is then solution annealed at temperature for several hours. The casting is quenched from the solution anneal temperature to a maximum temperature of 300° C., at a specified cooling rate which the casting passes through during quenching. The casting is then artificially aged for several hours at 150-300° C. Finally, the casting is cooled to room temperature.

Abstract: An improved substrate surface texture i.e., roughness, significantly improves the adhesion of thermal spray coatings. The surface texture is defined by two metrology parameters and the invention comprehends a range of average roughness (Sa) between 9 and 15 ?m and developed interfacial area ratio (Sdr) of greater than 100%. This surface texture is achieved by methods such as water jet erosion, mechanical roughening, laser texturing, chemical etching and plasma etching. The surface texture is especially beneficial for walls of cylinders of internal combustion engines, hydraulic cylinders and similar components to which a thermal spray coating is adhered and which are exposed to sliding or frictional wear.

Abstract: High temperature stable thermal barrier coatings useful for substrates that form component parts of engines such as a component from a gas turbine engine exposed to high temperatures are provided. The thermal barrier coatings include a multiphase composite and/or a multilayer coating comprised of two or more phases with at least one phase providing a low thermal conductivity and at least one phase providing mechanical and erosion durability. Such low thermal conductivity phase can include a rare earth zirconate and such mechanical durability phase can include a rare earth a rare earth aluminate. The different phases are thermochemically compatible even at high temperatures above about 1200° C.

Abstract: A web transport system for transporting a web of media along a web transport path in an in-track direction, including a liquid application system for applying a liquid to at least one surface of the web of media. An air skive is positioned along the web transport path downstream of the liquid application system, wherein the air skive directs one or more streams of air onto the web of media thereby removing at least some of the liquid that is being carried along with the web of media. A vapor source adds a vapor into the one or more streams of air provided by the air skive before the one or more streams of air are directed onto the web of media.

Abstract: Endodontic instruments for use in performing root canal therapy on a tooth are disclosed. In one form, the instruments include an elongate shank having a cutting edge extending from a distal end of the shank along an axial length of the shank. The shank comprises a titanium alloy, and the shank is prepared by heat-treating the shank at a temperature above 25° C. in an atmosphere consisting essentially of a gas unreactive with the shank. In another form, the endodontic instruments have an elongate shank having a cutting edge extending from a distal end of the shank along an axial length of the shank. The shank consists essentially of a titanium alloy selected from alpha-titanium alloys, beta-titanium alloys, and alpha-beta-titanium alloys. The instruments solve the problems encountered when cleaning and enlarging a curved root canal.

Abstract: There is provided a surface treatment method in which a processing gas is brought in contact with a heated processing object made of steel, an element in the processing gas is solid-solutionized, and thus a surface treatment is performed on the processing object. The processing object is heated to a heating temperature in a vicinity of a processing temperature at which the surface treatment is performed by heating an atmosphere in which the processing object is disposed. The surface treatment is performed by bringing the processing gas in contact with a surface of the processing object while the processing object which is heated is directly heated to the processing temperature.

Abstract: In an embodiment a method of coating a substrate comprises moving the substrate along a path of travel through a coating zone; generating a plasma jet directed toward a first side of the substrate; injecting a first reagent into the plasma jet; injecting a second reagent into the plasma jet; and regulating the flow of the first reagent according to a first set of parameters so that the first reagent is injected upstream of the plasma jet relative to the path of travel of the substrate; regulating the flow of the second reagent according to a second set of parameters so that the second reagent is injected downstream of the plasma jet relative to the path of travel of the substrate, such that the first and second reagents are applied to the substrate to form at least one layer of a coating on the substrate.

Abstract: The invention relates to a method for producing at least one solid layer and comprises at least the steps of: providing a carrier substrate (4) having a sacrificial layer (8) arranged thereon or arranging a sacrificial layer (8) on the provided carrier substrate (4), producing a useful layer (6) by way of chemical or physical gas phase deposition on the sacrificial layer (8) to form a multi-layer arrangement (2), removing the useful layer (6) as a result of a material weakening produced between the useful layer (6) and the carrier substrate (4), said material weakening being brought about by modifications (12) to the sacrificial layer (8) which were produced means of laser beams (10).

Abstract: A vapor deposition mask (10) has a fine-irregularities structure (14), provided on a contact surface of the vapor deposition mask (10), which is configured to attract, by van der Waals force, a film formation target substrate (30) so as to surround a plurality of apertures (12). The contact surface makes contact with the film formation target substrate (30).

Abstract: An ion implantation system is provided having an ion source configured to form an ion beam from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station configured to accept the ion beam for implantation of aluminum ions into a workpiece. The ion source has a solid-state material source having aluminum iodide in a solid form. A solid source vaporizer vaporizes the aluminum iodide, defining gaseous aluminum iodide. An arc chamber forms a plasma from the gaseous aluminum iodide, where arc current from a power supply is configured to dissociate aluminum ions from the aluminum iodide. One or more extraction electrodes extract the ion beam from the arc chamber. A water vapor source further introduces water to react residual aluminum iodide to form hydroiodic acid, where the residual aluminum iodide and hydroiodic acid is evacuated from the system.

Abstract: An ion implantation system is provided having an ion source configured to form an ion beam from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station configured to accept the ion beam for implantation of aluminum ions into a workpiece. The ion source has a solid-state material source having aluminum iodide in a solid form. A solid source vaporizer vaporizes the aluminum iodide, defining gaseous aluminum iodide. An arc chamber forms a plasma from the gaseous aluminum iodide, where arc current from a power supply is configured to dissociate aluminum ions from the aluminum iodide. One or more extraction electrodes extract the ion beam from the arc chamber. A water vapor source further introduces water to react residual aluminum iodide to form hydroiodic acid, where the residual aluminum iodide and hydroiodic acid is evacuated from the system.

Abstract: According to embodiments, systems and methods are described herein that facilitate use of a Chemical Vapor Deposition (CVD) system continuously. The systems and methods shown herein include multiple precursor gas sources, and structures for independently connecting or disconnecting those sources for replacement. Furthermore, by providing user inputs for diluting the outputs of these multiple precursor gas sources, mixtures of precursor gas in carrier gas can be generated that have sufficiently low concentrations to be routed to a remove CVD system even at relatively low temperatures. Therefore, in embodiments many precursor gas sources, located remotely from the CVD chamber, can be independently operated and replaced as needed without interrupting a supply of precursor gas to the CVD chamber.

Abstract: In one embodiment, a gas distribution assembly includes an injection block having at least one inlet to deliver a precursor gas to a plurality of plenums from at least two gas sources, a perforated plate bounding at least one side of each of the plurality of plenums, at least one radiant energy source positioned within each of the plurality of plenums to provide energy to the precursor gas from one or both of the at least two gas sources and flow an energized gas though openings in the perforated plate and into a chamber, and a variable power source coupled to each of the radiant energy sources positioned within each of the plurality of plenums.

Abstract: A coating apparatus includes a first vaporizer configured to vaporize a first precursor material, a second vaporizer configured to vaporize a second precursor material in series with the first vaporizer, at least one pyrolysis chamber configured to further process vaporized precursor material from one of the first vaporizer or second vaporizer, and a deposition chamber configured to receive the processed precursor materials.

Abstract: A gas mixing device includes: a cylindrical portion including an upper surface which is closed; a gas outflow passage formed in a central portion of a bottom surface of the cylindrical portion, and extends downward; a plurality of gas stream guide walls disposed to be spaced apart from each other in a circumferential direction along an edge of an opening formed by the gas outflow passage in the bottom surface, and installed to be rotationally symmetrical to a center of the cylindrical portion, the gas stream guide walls protruding toward the upper surface; and a gas inlet part installed between the gas stream guide walls and an inner peripheral surface of the cylindrical portion, and into which a gas to be mixed flows.

Abstract: Methods and apparatuses for controlling precursor flow in a semiconductor processing tool are disclosed. A method may include flowing gas through a gas line, opening an ampoule valve(s), before a dose step, to start a flow of precursor from the ampoule to a process chamber through the gas line, closing the ampoule valve(s) to stop the precursor from flowing out of the ampoule, opening a process chamber valve, at the beginning of the dose step, to allow the flow of precursor to enter the process chamber, and closing the process chamber valve, at the end of the dose step, to stop the flow of precursor from entering the process chamber. A controller may include at least one memory and at least one processor and the at least one memory may store instructions for controlling the at least one processor to control precursor flow in a semiconductor processing tool.

Abstract: A nozzle head, apparatus and method for providing a coating on a surface of a substrate by subjecting the surface of the substrate to successive surface reactions of at least two precursors according to principles of atomic layer deposition. The nozzle head comprises an output face provided with at least two different precursor zones, the at least two different precursor zones being arranged to provide different coating layers on the surface of the substrate.

Abstract: Disclosed is apparatus for atomic layer deposition including a frame, an injector head with longitudinal slots supplying gases to deposition spaces confined by the longitudinal slots and a substrate. The slots are transverse to a movement in a first direction of the substrate, a subframe suspending the injector head; a movable carrier supporting the substrate for movement in the first direction; and gas pads at the subframe outside the injector head between the subframe and the moveable carrier, bearing the subframe on the carrier for the movement in the first direction. Actuators suspend the injector head from the subframe, and a control device connected to the actuators controls the actuators to adjust a working distance between a reference plane of the injector head and the surface of the substrate corresponding to a predetermined distance and to adjust an orientation of the injector head corresponding to an orientation of the substrate.

Abstract: An apparatus and a method for processing a surface of a substrate exposes the surface of the substrate to alternating surface reactions of at least a first starting material and a second starting material according to the principles of atomic layer deposition method. A first starting material is fed on the surface of the substrate locally by a source by moving the source in relation to the substrate, and the surface of the substrate processed with the first starting material is exposed to a second starting material present in the atmosphere surrounding the source.

Abstract: Atomic layer deposition (ALD) type processes for producing metal containing thin films comprise feeding into a reaction space vapor phase pulses of metal containing cyclopentadienyl precursors as a metal source material. In preferred embodiments the metal containing cyclopentadienyl reactant comprises a metal atom that is not directly bonded to an oxygen or halide atom. In other embodiments the metal atom is bonded to a cyclopentadienyl compound and separately bonded to at least one ligand via a nitrogen atom. In still other embodiments the metal containing cyclopentadienyl compound comprises a nitrogen-bridged ligand.

Abstract: Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectible with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

Abstract: A sliding surface, which is formed using metal (SUJ2, palladium etc.) or oxide ceramics (ZrO2), is made to slide, at a Hertzian contact stress of 1.0 GPa or more in an atmospheric environment containing a hydrogen gas including a minute amount of an alcohol and water, against a slid surface including a PLC film which is a coating formed by an ionization deposition method while applying a low bias voltage. Consequently, it is possible to form, on the sliding surface, a low-friction coating that stably exhibits a significantly low friction coefficient of 10?4 order (less than 0.001).

Abstract: Embodiments disclosed herein generally relate to a substrate temperature monitoring system in a substrate support assembly. In one embodiment, the substrate support assembly includes a support plate and a substrate temperature monitoring system. The support plate has a top surface configured to support a substrate. The substrate temperature monitoring system is disposed in the substrate support plate. The substrate temperature monitoring system is configured to measure a temperature of the substrate from a bottom surface of the substrate. The substrate temperature monitoring system includes a window, a body, and a temperature sensor. The window is integrally formed in a top surface of the support plate. The body is embedded in the support plate, through the bottom surface. The body defines an interior passage. The temperature sensor is disposed in the interior passage beneath the window. The temperature sensor is configured to measure the temperature of the substrate.

Abstract: Disclosed are methods of and systems for depositing a film. The methods may include: (a) determining process conditions, including a flow condition of a curtain gas that flows around the periphery of each station in the chamber, for performing film deposition in the chamber, (b) flowing the curtain gas to each station in the chamber during film deposition according to the process conditions determined in (a), (c) determining, during or after (b), an adjusted flow condition of the curtain gas in the chamber to improve substrate nonuniformity, and (d) flowing, after (c), the curtain gas during film deposition according to the adjusted flow condition determined in (c). The systems may include a gas delivery system, a processing chamber, and a controller having control logic for performing one or more of (a)-(d).

Abstract: The present invention pertains to a multilayer tubular article, to processes for the manufacture of said multilayer tubular article and to uses of said multilayer tubular article in upstream applications for conveying hydrocarbons from a well to a floating off-shore unit via a bottom platform.

Abstract: This manufacturing method of a metal component enables precision processing of a corner portion, and the radius of curvature of a cog tip of a gear and the like can be made smaller than before. The manufacturing method of a metal component includes: (a) forming a mask film having, in plan view, a first side, a second side, and an extension portion that extends from a region between the first side and the second side on a metal film; and (b) forming a corner portion having, in plan view, a third side and a fourth side by etching the metal film.

Abstract: The present invention provides a method for fabricating an electrode comprising a co-catalyst layer for splitting water with light. The method comprises steps of (a) forming a catalyst layer containing at least one selected from the group consisting of a niobium-containing oxynitride and a niobium-containing nitride on an electrically conductive principal surface of a substrate; (b) forming a transition metal oxide layer on the catalyst layer in an inert gas atmosphere containing oxidized gas impurities to provide a stacking structure comprising the substrate, the catalyst layer, and the transition metal oxide layer; (c) immersing the stacking structure in an electrolyte aqueous solution; and (d) applying a positive electric potential to the stacking structure in the electrolyte aqueous solution to convert the transition metal oxide layer into the co-catalyst layer. The present invention provides an electrode for water splitting having high water-splitting efficiency.

Abstract: Provided is an air electrode or water electrolysis anode showing a higher catalytic activity than carbon black and not having a risk of oxidative degradation, in particular, an air electrode or water electrolysis anode for a metal-air battery or a water electrolysis apparatus. The air electrode or water electrolysis anode includes an electron-conductive material represented by LaNi1?x?yCuxFeyO3?? (where x>0, y>0, x+y<1, and 0???0.4).

Abstract: A gas diffusion layer includes a laminate made up of sheets each having a plurality of through-holes through which gas passes. One or a plurality of the sheets in the laminate includes communication paths to communicate the through-holes in another sheet adjacent to the one sheet or one of the plurality of sheets with each other or to communicate the through-holes in another sheet adjacent to the one sheet or one of the plurality of sheets with the through-holes in the other adjacent sheet, the through-holes being separated from and being not communicated with the other through-holes in the same sheet.

Abstract: A method for the substantially complete conversion of hydrogenous matter to higher value product, the method comprising: (i) subjecting the hydrogenous matter to a substantially complete deconstruction process in which an aqueous phase containing a multiplicity of deconstructed compounds is produced; and (ii) contacting the aqueous phase with an anode of a microbial electrolysis cell, said anode containing a community of microbes thereon which oxidatively degrade one or more of the oxygenated organic compounds in the aqueous phase to produce protons and free electrons at the anode, wherein the protons and free electrons are transported to the cathode to produce hydrogen gas or a valuable reduced organic compound at the cathode upon application of a suitable cell potential across the anode and cathode. The invention is also directed to an apparatus for practicing the method described above.

Abstract: An electrochemical compressor utilizes a working fluid having a proton associable component, such as ammonia. Water may be reacted on a anode to form protons that are transported through an ion conducting membrane to the cathode side of the electrochemical compressor. The proton associable component of the working fluid will be pulled through the ion conducting membrane along with the proton. The ion conducting membrane may include perfluorosulfonic acid ionomer, polystyrene sufonic acid ionomer and/or carboxymethyl cellulose.

Abstract: Provided is a method for producing a photocatalyst electrode for water decomposition that exhibits excellent detachability between the substrate and the photocatalyst layer and exhibits high photocurrent density. The method for producing a photocatalyst electrode for water decomposition of the invention includes: a metal layer forming step of forming a metal layer on one surface of a first substrate by a vapor phase film-forming method or a liquid phase film-forming method; a photocatalyst layer forming step of forming a photocatalyst layer by subjecting the metal layer to at least one treatment selected from an oxidation treatment, a nitriding treatment, a sulfurization treatment, or a selenization treatment; a current collecting layer forming step of forming a current collecting layer on a surface of the photocatalyst layer, the surface being on the opposite side of the first substrate; and a detachment step of detaching the first substrate from the photocatalyst layer.

Abstract: An irrigation system is provided. The irrigation system includes a reservoir for storing irrigation water, an electrolytic gas generator, a detector, and a control unit. The electrolytic gas generator is in fluid communication with the reservoir to output a first gas and a second gas generated by the electrolytic gas generator to the irrigation water. The detector is arranged in the water reservoir to detect the concentrations of dissolved first gas and dissolved second gas of the irrigation water to obtain dissolved gas concentration information. The control unit electrically connects to the detector and the electrolytic gas generator receives the dissolved gas concentration information and adjusts the voltage applied to the electrolytic gas generator according to the dissolved gas concentration information to control the type of gas generated by the electrolytic gas generator and the concentrations of dissolved first and second gas of the irrigation water.

Abstract: A medical gas-liquid supply system including an electrolytic gas generator, a pure water supply device, a control unit, a first gas storing unit, a second gas storing unit and a gas output unit is provided. The control unit is electrically connected to the electrolytic gas generator for controlling the voltage value of the electrolytic gas generator and the type of gases generated by the electrolytic gas generator. The first and second gas storing units are communicated to the electrolytic gas generator for storing the first and second gases generated by the electrolytic gas generator respectively. The gas output unit is communicated to the first and second gas storing units and has first, second and third output ends for outputting the first gas, a mixed gas and the second gas respectively, in which the mixed gas includes the first and second gases.

Abstract: A module for an HTE reactor or an SOFC fuel cell, the module including a circuit for the circulation of a gas, in addition to the reactive gases required for the electrolysis reaction or the reverse reaction in an SOFC cell, the circuit enabling, during the operation under pressure, the additional gas to equalise, on one side of the glass- and/or vitroceramic-based seals, the pressure of the reactive gases generated on the other side.

Abstract: An aluminum reduction cell having a shell structure with a pair of longitudinally extending sidewalls, a pair of transversely extending endwalls, a bottom wall, and an open top having an upper edge. The aluminum reduction cell also has a transverse support structure with transverse bottom beams located under the shell structure and extending transversely between the sidewalls, each of the transverse bottom beams having a pair of opposed ends. The aluminium reduction cell also has compliant binding elements fixed to the transverse support structure, each extending vertically along an outer surface of one of the sidewalls for applying an inwardly directed force said sidewall. The compliant binding elements are in the form of cantilever springs. Each spring has a metal member with a lower end which is secured to the transverse support structure, and a compliant, upper free end which is movable inwardly and outwardly in response to expansion and contraction of the shell structure.

Abstract: The invention relates to non-ferrous metallurgy, more particularly to producing aluminium by electrolysis, and even more particularly to a structural element for covering the space above a melt in an electrolysis cell for producing aluminium by the electrolysis of cryolite-alumina melts. In a cover for an electrolysis cell for producing aluminium, which is in contact with a vapour-gas phase when the electrolysis cell is in operation and which is in the form of central and peripheral sections which are movably arranged relative to each other, the central and peripheral sections are made from a corrosion-resistant and erosion-resistant material which comprises 80.0-99.0 wt % of fluorophlogopite and 20.0-1.0 wt % of a refractory filler. The central sections of the cover may be permanently fixed on each anode rod, and the peripheral sections may be configured as convex panels rigidly and removably fixed on the top surface of a cathode and supported by the central section of the cover.

Abstract: In certain embodiments, a method comprises placing nonconductive fibers adjacent to a conductive material, immersing the nonconductive fibers and the conductive material in a plating medium, and applying a voltage to the conductive material to initiate electroplating. The method further comprises engulfing, by electroplating, the nonconductive fibers in metal to create a metal matrix composite.

Abstract: In manufacturing of a first electroformed component and a second electroformed component having portions fitted to each other into close contact, after the first electroformed component is formed, the first electroformed component is used as a portion of an electroforming mold to form the second electroformed component. Using the first electroformed component as a portion of the electroforming mold to form the second electroformed component, the shape of the first electroformed component is transferred to the second electroformed component. As a result, multiple types of components differing in shape may be accurately manufactured concurrently in a series of manufacturing steps.

Abstract: The present invention relates to an Fe—P—Cr alloy thin plate and a method for manufacturing the same. An embodiment of the present invention provides an Fe—P—Cr alloy thin plate including, in terms of wt %, P (6.0-13.0%), Cr (0.002-0.1%), and the balance of Fe and other inevitable impurities.

Abstract: A method for producing round stock (10) which is provided with at least one inscription and/or marking (16), at least the surface (12) of the round stock (10) consisting of a metallic material, in particular of chromium or steel, for example of hardened steel, chromium-plated steel or stainless steel.

Abstract: Disclosed are platable resin compositions for use in, for example, metal plating of plastics. The resin compositions include polycarbonate, acrylonitrile butadiene styrene and a filler, and may exclude a laser direct structuring additive. The compositions possess markedly improved characteristics, such as notched IZOD impact, flex modulus, and peel strength. Also disclosed are methods for plating metal on a substrate that is formed from the present resin compositions, as well as articles that include the disclosed compositions.

Abstract: Provided is a surface treated steel sheet for a fuel tank, the surface treated steel sheet including: a Zn plated layer or a Zn—Ni alloy plated layer which is formed on at least a surface of the steel sheet to be an inner surface of the fuel tank; and a chromate-free chemical conversion coating layer containing a water-and-oil repellent, the chromate-free chemical conversion coating layer being placed over the Zn plated layer or the Zn—Ni alloy plated layer on the surface to be the inner surface of the fuel tank. A water contact angle on a surface of the chromate-free chemical conversion coating layer is more than or equal to 70 degrees and an n-hexadecane contact angle on the surface of the chromate-free chemical conversion coating layer is more than or equal to 30 degrees and less than or equal to 70 degrees.

Abstract: A copper foil with a release layer is provided that capable of forming a circuit, of such as an embedded trace substrate, by a subtractive method in a simple process. A copper foil with a release layer, containing, in this order, a release layer; a barrier layer having dissolution resistance to a copper etchant; and a copper foil.

Abstract: Various embodiments herein relate to methods and apparatus for electroplating metal onto substrates. In various cases, a reference electrode may be modified to promote improved electroplating results. The modifications may relate to one or more of the reference electrode's shape, position, relative conductivity compared to the electrolyte, or other design feature. In some particular examples the reference electrode may be dynamically changeable, for example having a changeable shape and/or position. In a particular example the reference electrode may be made of multiple segments. The techniques described herein may be combined as desired for individual applications.

Abstract: A crystal growth apparatus includes: a raw material supplying part that mixes raw materials including a group III element metal and an alkali metal; a growing part disposed at a stage under the raw material supplying part, the growing part having a seed substrate; a tilting mechanism that tilts the raw material supplying part and the growing part; a heater that heats the raw material supplying part and the growing part; a control part that controls an operation of the tilting mechanism; and a supply port that supplies a nitrogen element-containing substance to the growing part, wherein the raw material supplying part having an opening facing to the growing part, the opening being disposed at a bottom portion and one edge portion of the raw material supplying part, and the control part controls the tilting mechanism so as to tilt the raw material supplying part toward the other edge portion on the side opposite to the one edge portion so as to prevent the raw materials from entering the opening when the raw ma

Abstract: An embodiment provides a method for growing a silicon single crystalline ingot that may include: preparing a silicon melt solution in a crucible; probing a seed in the silicon melt solution; rotating the seed and the crucible while applying a horizontal magnetic field to the crucible; and pulling up an ingot grown from the silicon melt solution, wherein an interface between the growing ingot and the silicon melt solution is formed downward from a horizontal plane at 1 to 5 millimeters, and a bulk micro defects (BMD) size of the grown ingot is between 55 and 65 nanometers.

Abstract: A method of producing an apatite crystal includes the steps of preparing an apatite single crystal expressed by the general formula M25(PO4)3X (M2 being at least atomic element selected from the group consisting of divalent alkaline-earth metals and Eu, and X is at least one atomic selected from the group consisting of halogens); placing the apatite single crystal into a space controllable to a predetermined atmosphere; supplying water vapor into the space; and heating such that the atmosphere in the space is within a 1000° C. to 1400° C. range.

Abstract: A method for growing beta phase of gallium oxide (?-Ga2O3) single crystals from the melt contained within a metal crucible surrounded by a thermal insulation and heated by a heater. A growth atmosphere provided into a growth furnace has a variable oxygen concentration or partial pressure in such a way that the oxygen concentration reaches a growth oxygen concentration value (C2, C2?, C2?) in the concentration range (SC) of 5-100 vol. % below the melting temperature (MT) of Ga2O3 or at the melting temperature (MT) or after complete melting of the Ga2O3 starting material adapted to minimize creation of metallic gallium amount and thus eutectic formation with the metal crucible. During the crystal growth step of the ?-Ga2O3 single crystal from the melt at the growth temperature (GT) the growth oxygen concentration value (C2, C2?, C2?) is maintained within the oxygen concentration range (SC).

Abstract: A disk-shaped GaN substrate has a diameter of 2 inches or more has a front surface tilted with a tilt angle of 45° or more and 135° or less relative to the (0001) plane in a tilt direction within a range of ±5° around the <10-10> direction, and a back surface which is a main surface opposite to the front surface. The GaN substrate has a first point positioned in a direction perpendicular to the c-axis when viewed from the center thereof, on the side surface thereof. A single diffraction peak appears in an X-ray diffraction pattern obtained by ? scan in which an X-ray (CuK?1: wavelength: 0.1542 nm) is incident to the first point and the incident angle ? of the incident X-ray is varied while the 2? angle of the diffracted X-ray is fixed to twice the Bragg angle of 28.99° of the {11-20} plane.