Abstract: A method of recovering metal values from metal-bearing materials such as slags and drosses includes the steps of pulverizing the material to particles less than about 100 ?m; leaching the pulverized material with a solution of ammonium chloride, sodium chloride, and potassium chloride; sequentially recovering at least two metals from the leachate by the addition of zinc using a sequential cementation process; and recovering zinc from the solution by electrowinning.

Abstract: A process for recovering non-ferrous metals from a solid matrix may include: leaching the solid matrix with an aqueous-based solution, in a presence of oxygen, to obtain an extraction solution including leached metals and solid leaching residue; separating the solid leaching residue from the extraction solution; and subjecting the extraction solution to at least one cementation to recover the leached metals in elemental state. The leaching solution may include chloride ions. The leaching solution may further include ammonium ions. A pH of the leaching solution may be greater than or equal to 6.5 and less than or equal to 8.5. A leaching temperature may be greater than or equal to 100° C. and less than or equal to 160° C. A leaching pressure may be greater than or equal to 150 kPa and less than or equal to 800 kPa.

Abstract: The present invention provides a hydrometallurgical method for nickel oxide ore, wherein the plant can be smoothly started up without imposing a load onto a filter cloth for a separation treatment of zinc sulfide, and the amount of residual zinc in a mother liquor for nickel recovery can be reduced to 1 mg/L. In the plant start-up after the completion of a periodic inspection, a post-neutralization solution is controlled to return to a neutralization reaction tank via circulation piping by adjustment of a switching valve in flow piping without sulfurizing post-neutralization solution. When the flow rate and/or the temperature of the post-neutralization solution circulated reaches a predetermined value, a sulfurization treatment is applied to the post-neutralization solution in the dezincification reaction tank to form zinc-sulfide-containing mother liquor for nickel recovery and adjust the switching valve.

Abstract: The invention discloses a treatment method of a chlorine-containing zinc oxide secondary material, which comprises the following steps: 1) leaching the chlorine-containing zinc oxide secondary material I through an acid solution; 2) selectively extracting zinc through di-(2-ethylhexyl)phosphoric acid (P204)-kerosene solvent; 3) implementing stripping-electrolysis zinc recovery; 4) repeating steps 1)-4); 5) taking out the raffinate obtained from the Step (4), mixing the residual taken out raffinate with chlorine-containing zinc oxide secondary material II when balance on chlorine ion input and taking out is achieved; carrying out liquid-solid separation; leaching the separated deposit through acid raffinate of the step 1); 6) after separated solution achieves preset conditions, purifying the chlorine-containing aqueous phase; 7) evaporating and concentrating to crystallize out KCl and NaCl products.

Abstract: The present disclosure relates to processes for recovering rare earth elements from an aluminum-bearing material. The processes can comprise leaching the aluminum-bearing material with an acid so as to obtain a leachate comprising at least one aluminum ion, at least one iron ion, at least one rare earth element, and a solid, and separating the leachate from the solid. The processes can also comprise substantially selectively removing at least one of the at least one aluminum ion and the at least one iron ion from the leachate and optionally obtaining a precipitate. The processes can also comprise substantially selectively removing the at least one rare earth element from the leachate and/or the precipitate.

Abstract: An extruded product made of an alloy containing aluminum comprising 4.2 wt % to 4.8 wt % of Cu, 0.9 wt % to 1.1 wt % of Li, 0.15 wt % to 0.25 wt % of Ag, 0.2 wt % to 0.6 wt % of Mg, 0.07 wt % to 0.15 wt % of Zr, 0.2 wt % to 0.6 wt % of Mn, 0.01 wt % to 0.15 wt % of Ti, a quantity of Zn less than 0.2 wt %, a quantity of Fe and Si less than or equal to 0.1 wt % each, and unavoidable impurities with a content less than or equal to 0.05 wt % each and 0.15 wt % in total is disclosed. The profiles according to the invention are particularly useful as fuselage stiffeners or stringers, circumferential frames, wing stiffeners, floor beams or profiles, or seat tracks, notably owing to their improved properties in relation to those of known products, in particular in terms of energy absorption during an impact, static mechanical strength and corrosion resistance properties and their low density.

Abstract: An improved magnesium-based alloy for wrought applications is disclosed, including a method of fabricating alloy sheet from said alloy. The improved magnesium-based alloy consists of: 0.5 to 4.0% by weight zinc; 0.02 to 0.70% by weight a rare earth element, or mixture of the same including gadolinium; and incidental impurities. The rare earth element in some embodiments may be yttrium and/or gadolinium. In some embodiments the magnesium-based alloy may also consist of a grain refiner and in some embodiments the grain refiner may be zirconium. In combination, the inclusion of zinc and a rare earth element, into the magnesium alloy may have enhanced capacity for rolling workability, deep drawing at low temperatures and stretch formability at room temperature. The improved alloy may also exhibit increased tensile strength and formability while evincing a reduced tendency for tearing during preparation.

Abstract: Use of Ca in metal matrix composites (MMC) allows for incorporation of small and large amounts of ceramic (e.g. rutile TiO2) into the metal (Al, or its alloys). Calcium remains principally out of the matrix and is part of a boundary layer system that has advantages for integrity of the MMC. Between 0.005 and 10 wt. % calcium (Ca) may be included, and more than 50 wt. % of rutile has been shown to be integrated. Rutile may therefore be used to reduce melt loss due to calcium from an aluminum or aluminum alloy melt.

Abstract: A hot stamped steel according to the present invention satisfies an expression of (5×[Si]+[Mn])/[C]>11 when [C] represents an amount of C by mass %, [Si] represents an amount of Si by mass %, and [Mn] represents an amount of Mn by mass %, a metallographic structure after hot stamping includes 40% to 90% of a ferrite and 10% to 60% of a martensite in an area fraction, a total of an area fraction of the ferrite and an area fraction of the martensite is 60% or more, a hardness of the martensite measured with a nanoindenter satisfies an H2/H1<1.10 and ?HM<20, and TS×?, which is a product of a tensile strength TS and a hole expansion ratio ? is 50000 MPa·% or more.

Abstract: A high-manganese wear-resistant steel having excellent weldability comprises 5 to 15 wt % of Mn, 16?33.5C+Mn?30 of C, 0.05 to 1.0 wt % of Si, and a balance of Fe and other inevitable impurities. The microstructure thereof includes martensite as a major component, and 5% to 40% of residual austenite by area fraction.

Abstract: A high-tensile steel plate has a chemical composition containing, by mass, specific amounts of C, Mn, Si, P, S, Al, Ni, B, N, one or more elements selected from Cr, Mo, V, Cu, Ti, and Ca as needed, Ceq?0.80, and a center-segregation zone hardness index HCS satisfying 5.5[C]4/3+15[P]+0.90[Mn]+0.12[Ni]+0.53[Mo]?2.5. The hardness of a center-segregation zone satisfies HVmax/HVave?1.35+0.006/C?t/750. A steel having the above-described chemical composition is subjected to hot rolling at a specific slab-heating temperature at a specific rolling reduction ratio, subsequently reheated, cooled at a cooling rate of 0.3° C./s or more until the temperature of a central portion in a plate-thickness direction reaches 350° C. or less, and tempered to a specific temperature range.

Abstract: This heat-resistant austenitic stainless steel sheet contains, in mass %, C: 0.05 to 0.15%, Si: 1.0 to 3.5%, Mn: 0.5 to 2.0%, P: not more than 0.04%, S: not more than 0.01%, Cr: 23.0 to 26.0%, Ni: 10.0 to 15.0%, Mo: 0.50 to 1.20%, Ti: not more than 0.1%, Al: 0.01 to 0.10% and N: 0.10 to 0.30%, wherein the total amount of C and N (C+N) is from 0.25 to 0.35%, and the balance is composed of Fe and unavoidable impurities. The heat-resistant austenitic stainless steel can be used in a high-temperature environment that reaches a maximum temperature of 1,100° C.

Abstract: A method to form an enclosure or assembly which is fitted together and joined via a thermoplastic forming operation in order to seal the enclosure and hinder attempts to tamper with the contents.

Abstract: Aluminum iron based alloys and methods for producing the same are provided. In an exemplary embodiment, a method for producing an aluminum iron based alloy includes melting an aluminum iron based alloy to form a melt. The aluminum iron based alloy includes iron at about 2.0 to about 7.5 weight percent, silicon at about 0.5 to about 3.0 weight percent, aluminum at about 86 to about 97.5 weight percent, and one or more of manganese, vanadium, chromium, molybdenum, tungsten, niobium, zirconium, cerium, erbium, magnesium, calcium, scandium, ytterbium, yttrium, or tantalum at about 0.05 to about 3.5 weight percent. The melt is solidified at about 105 degrees centigrade per second of faster to form particulates. The particulates are degassed at a degassing temperature of about 400 to about 500 degrees centigrade.

Abstract: Disclosed herein is a nickel-based heat-resistant superalloy produced by a casting and forging method, the nickel-based heat-resistant superalloy comprising 2.0 mass % or more but 25 mass % or less of chromium, 0.2 mass % or more but 7.0 mass % or less of aluminum, 19.5 mass % or more but 55.0 mass % or less of cobalt, [0.17×(mass % of cobalt content?23)+3] mass % or more but [0.17×(mass % of cobalt content?20)+7] mass % or less and 5.1 mass % or more of titanium, and the balance being nickel and inevitable impurities, and being subjected to solution heat treatment at 93% or more but less than 100% of a ?? solvus temperature.

Abstract: Provided is a zinc-plated steel sheet for hot pressing having outstanding surface characteristics, comprising: a steel foundation plate comprising a metal surface diffusion layer of which the Gibbs free energy reduction per mole of oxygen during oxidation is less than that of Cr, an aluminum-rich layer containing at least 30 wt. % of aluminum formed on the surface diffusion layer, and a zinc plating layer formed on the aluminum-rich layer. In this way, a metal having a low affinity for oxygen is coated to an effective thickness prior to annealing and thus the creation of annealing oxides at the surface of the steel sheet is suppressed and a uniform zinc plating layer is formed, and alloying of the zinc plating layer is promoted during press-processing heat treatment. Cracking in the steel foundation plate during hot press molding is prevented.

Abstract: A low friction top coat over a multilayer metal/ceramic bondcoat provides a conductive substrate, such as a rotary tool, with wear resistance and corrosion resistance. The top coat further provides low friction and anti-stickiness as well as high compressive stress. The high compressive stress provided by the top coat protects against degradation of the tool due to abrasion and torsional and cyclic fatigue. Substrate temperature is strictly controlled during the coating process to preserve the bulk properties of the substrate and the coating. The described coating process is particularly useful when applied to shape memory alloys.

Abstract: A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2.

Abstract: The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of niobium or vanadium, and a third metal element selected from the group consisting of titanium, chromium, niobium, vanadium, and tantalum, wherein the third metal element is different from the second metal element, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in the second metal element, and a phase that is rich in the third metal element.

Abstract: In order to produce zirconia-based layers on a deposition substrate, wherein reactive spark deposition using pulsed spark current and/or the application of a magnetic field that is perpendicular to the spark target are employed, a mixed target comprising elemental zircon and at least one stabilizer is used, or a zirconium target comprising elemental zirconium is used, wherein in addition to oxygen, nitrogen is used as the reactive gas. As an alternative, combined with the use of the mixed target, nitrogen can also be used as the reactive gas in addition to oxygen.

Abstract: An evaporation coating apparatus comprising a heating unit (3) and a cylindrical member (1) disposed within the heating unit (3), wherein the cylindrical member (1) comprises a hollow sleeve (13) and a barrel (12) disposed at an inner side of the hollow sleeve (13) in a fitting manner; wherein a top end area of the hollow sleeve (13) is provided with a first evaporation hole (131), and an external surface of the hollow sleeve (13) is provided with an internal heater strip (4) connected to a control unit; wherein an external surface of the barrel (12) is provided with a groove (1?) extending along an axial central line of the barrel (12), the groove (1?) is provided with a plurality of compartments (11) arranged at interval space, and each of the compartments (11) is provided with a crucible (2); wherein the crucible (2) comprises a main body (21) which is disposed within the compartment (11) and sealed all around with one side opened, and a cover (22) which is connected to the main body (21) in a fitting mann

Abstract: A sintered compact sputtering target in which a composition ratio based on atomicity is represented by a formula of (Fe100-x—Ptx)100-A—CA (provided A is a number which satisfies 20?A?50 and X is a number which satisfies 35?X?55), wherein C grains are finely dispersed in an alloy, and the relative density is 90% or higher. The production of a magnetic thin film with granular structure is provided without using an expensive simultaneous sputtering device, and a high-density sputtering target capable of reducing the amount of particles generated during sputtering is provided.

Abstract: Embodiments of the present technology include graphene-metal composites. An example graphene-metal composite comprises a porous metal foam substrate, a graphene layer deposited to the porous metal foam substrate, a metal layer applied to the graphene layer, and another graphene layer deposited to the metal layer; the multilayered porous metal foam substrate being compressed to form a graphene-metal composite.

Abstract: A method of filling a recess with a nitride film is performed by repeating a cycle. The cycle includes a film-forming raw material gas adsorption process of adsorbing a raw material gas containing an element forming the nitride film to be formed on a target substrate on which the recess is formed on its surface, and a nitriding process of nitriding the adsorbed raw material gas by nitriding species to fill the recess. At least a portion of a period for forming the nitride film is used as a bottom-up growth period, for which a polymer material adsorbable to the surface of the target substrate is supplied in a gaseous state and is adsorbed to an upper portion of the recess to inhibit adsorption of the film-forming raw material gas, and for which the nitride film is grown from a bottom portion of the recess.

Abstract: A coated cutting tool includes a substrate and a surface coating, wherein the coating is a Ti(C,N,O) layer comprising at least one columnar fine-grained MTCVD Ti(C,N) layer with an average grain width of 0.05-0.4 ?m and an atomic ratio of carbon to the sum of carbon and nitrogen (C/(C+N)) contained in the MTCVD Ti(C,N) layer being on average 0.50-0.65. A method for manufacturing the coated cutting tool includes depositing the MTCVD Ti(C,N) layer.

Abstract: Provided is a free-standing silicon oxide film that is under tensile stress. Also, provided are methods of making a free-standing silicon oxide film that is under tensile stress. The methods use low-power PECVD deposition of silicon oxide. Methods of imaging one or more objects (e.g., cells) using a free-standing silicon oxide film that is under tensile stress is also provided.

Abstract: A gas shower device, a device and a method for chemical vapor deposition. A gas shower device has a showerhead. The showerhead includes a center region and a periphery region surrounding the center region; the center region and periphery region of the showerhead have a plurality of second gas-outlets which are arranged in parallel; the second gas-outlets are used to output the second gas; a first gas-outlet arranged between two adjacent second gas-outlets, includes the first sub-gas-outlet located in the center region and the second sub-gas-outlet located in the periphery region; the first sub-gas-outlet and the second sub-gas-outlet are mutually isolated, the first sub-gas-outlet is used to output the first gas and the second sub-gas-outlet is used to output the second gas; a first gas channel is connected to the first sub-gas-outlet; a second gas channel is connected to the second gas-outlet and the second sub-gas-outlet.

Abstract: Under one aspect, a structure is provided that includes a substrate including a first material having a threshold temperature above which the first material is damaged and a layer consisting essentially of a second material molecularly bonded to the first material of the substrate. The second material is formed on the substrate at a reaction temperature that is higher than the threshold temperature of the first material. An interface between the substrate and the second material is a substantially defect-free surface.

Abstract: Apparatus for processing substrates are provided herein. In some embodiments, plasma processing apparatus may include a process chamber having a dielectric lid and an interior processing volume beneath the dielectric lid, a first RF coil to couple RF energy into the processing volume, and an RF shielded lid heater coupled to a top surface of the dielectric lid. The RF shielded lid heater may include an annular member, and a plurality of spokes, wherein each of the plurality of spokes includes one of (a) a first portion that extends downward from the annular and couples the annular member to a second portion of the spoke that extends radially inward, or (b) a first portion that extends radially outward from the annular member.

Abstract: A metal-based/diamond laser composite coating preparation method includes: first selecting high-hardness metal powder and diamond powder of a proper grain size and shape; then uniformly mixing the high-hardness metal powder and diamond powder via a ball-milling method; and finally preparing a composite coating on a substrate by synchronously combining laser texturing technology, laser thermal treatment technology and cold spraying technology. The thickness of the composite coating is greater than 1 mm, and the volume content of diamond in the coating is greater than 45%. A metal-based/diamond laser composite coating is also provided.

Abstract: Disclosed are a method of manufacturing a non-slip plate and a non-slip plate manufactured thereby. The method includes preparing a base metal plate for joint design, washing and surface treatment, preparing a non-slip material, adhering the non-slip material to the bonding surface of the base metal plate to form a protrusion, and brazing the base metal plate having the non-slip material adhered thereto in a brazing furnace. The non-slip plate is applied to vehicles to impart non-slip performance thereto, and can be semi-permanently used.

Abstract: A coating system on a superalloy or silicon-containing substrate of an article exposed to high temperatures. The coating system includes a coating layer that overlies the substrate and is susceptible to hot corrosion promoted by molten salt impurities. A corrosion barrier coating overlies the coating layer and contains at least one rare-earth oxide-containing compound that reacts with the molten salt impurities to form a dense, protective byproduct barrier layer.

Abstract: A steel sheet used to manufacture a container, wherein the steel sheet includes a chromate film layer or a film layer including Zr on the Ni plating layer, the Ni plating layer includes one or more of a hydroxyl Ni and a Ni oxide, an adhesion amount of the Ni plating layer in terms of an amount of Ni is 0.3 g/m2 or more, a concentration of oxygen atoms of the Ni plating layer due to the hydroxyl Ni and the Ni oxide is 1 to 10 atomic %, an adhesion amount of the chromate film layer in terms of the amount of Cr is 1 to 40 mg/m2, and an adhesion amount of the film layer including Zr in terms of an amount of Zr is 1 to 40 mg/m2 or more.

Abstract: Provided are a method of producing corrosion-protective copper paste through a single process and an application thereof to a dipole tag antenna. Copper powder is surface-etched by using a hydrochloric acid in an inert gas atmosphere, a phosphoric acid aqueous solution is added thereto to form copper phosphate on the etched surface of the copper powder, and then, a vinyl imidazole-silane copolymer and poly(4-styrenesulfonate) were introduced thereto to form a corrosion-protective coating layer on the surface of copper powder on which the copper phosphate has been formed, and a centrifuge and an agate mortar are used to prepare a copper paste having high viscosity and high dispersability. When a copper paste thin film is formed on a flexible film by screen printing, a produced dipole tag antenna may have high efficiency.

Abstract: A method for improving the efficiency and durability of reversible solid oxide cells during electrical energy storage is disclosed. The method utilizes a specific set of operating conditions that produces a storage chemistry where approximately thermal-neutral operation can be achieved at low cell over-potentials. Also disclosed are reversible solid oxide cell energy storage system configurations, including one that utilizes storage in natural gas and water storage/distribution networks, thereby reducing storage cost.

Abstract: A catalyst layer for an electrochemical device comprises a catalytically active element and an ion conducting polymer. The ion conducting polymer comprises positively charged cyclic amine groups. The ion conducting polymer comprises at least one of an imidazolium, a pyridinium, a pyrazolium, a pyrrolidinium, a pyrrolium, a pyrimidium, a piperidinium, an indolium, a triazinium, and polymers thereof. The catalytically active element comprises at least one of V, Cr, Mn, Fe, Co, Ni, Cu, Sn, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Ir, Pt, Au, Hg, Al, Si, In, Tl, Pb, Bi, Sb, Te, U, Sm, Tb, La, Ce and Nd. In an electrolyzer comprising the present catalyst layer, the feed to the electrolyzer comprises at least one of CO2 and H2O.

Abstract: The present disclosure related to an inert anode which is electrically connected to the electrolytic cell, such that a conductor rod is connected to the inert anode in order to supply current from a current supply to the inert anode, where the inert anode directs current into the electrolytic bath to produce nonferrous metal (where current exits the cell via a cathode).

Abstract: There are provided a chip electronic component and a manufacturing method thereof, and more particularly, a chip electronic component having an internal coil structure capable of preventing the occurrence of short-circuits between coil portions and having a high aspect ratio (AR) by increasing a thickness of a coil as compared to a width of the coil, and a manufacturing method thereof.

Abstract: This invention relates to apparatus for electrochemical deposition onto the surface of a substrate. The apparatus includes an anode electrode 13 a support 12 for supporting the substrate 11 with its one surface 21 exposed at a location, the support 12 and the anode electrode 13 being relatively movable to alter the gap between the anode 13 and the location to define a chamber 23 between them and an electrical power source 18 with an ohmic contact to the seed layer 20 for creating a potential difference across the gap. The apparatus further includes a seal 14 for sealing with the seed layer 20 to define the fluid chamber 23; and the fluid inlet 16 and a fluid outlet 17 to the chamber 13.

Abstract: Apparatuses and methods are provided for depositing a metal layer on a wafer. A secondary weir is positioned at a region below the primary weir such that overflowed plating solution over the primary weir during electroplating flows in a substantially azimuthally uniform manner. Methods are provided for electroplating wafers by increasing flow rate between wafer processes while plating solution flows over a primary weir, remains in contact with the overflowing plating solution, and flows onto the secondary weir such that overflow is substantially azimuthally uniform.

Abstract: An electrochemical deposition apparatus and methods of using the same are provided herein.

Abstract: The device forming a crucible for fabrication of crystalline material by directional solidification comprises a bottom and at least one side wall. The bottom presents a first portion having a first thermal resistance and a second portion having a second thermal resistance that is lower than the first thermal resistance. The second portion is designed to receive a seed for fabrication of the crystalline material. The bottom and side wall are at least partially formed by a tightly sealed part including at least one indentation participating in defining said first and second portions. The first portion is covered by a first anti-adherent layer having an additional first thermal resistance. The second portion may be covered by a second anti-adherent layer having an additional second thermal resistance that is lower than the first thermal resistance.

Abstract: In the present invention, a crucible formed of SiC as a main component is used as a container for a Si—C solution. The SiC crucible is heated such that, for example, an isothermal line representing a temperature distribution within the crucible draws an inverted convex shape; and Si and C, which are derived from a main component SiC of the crucible, are eluted from a high-temperature surface region of the crucible in contact with the Si—C solution, into the Si—C solution, thereby suppressing precipitation of a SiC polycrystal on a surface of the crucible in contact with the Si—C solution. To the Si—C solution of this state, a SiC seed crystal is moved down from the upper portion of the crucible closer to the Si—C solution and brought into contact with the Si—C solution to grow a SiC single crystal on the SiC seed crystal.

Abstract: A system and method for providing support to semiconductor wafer is provided. An embodiment comprises introducing a vacancy enhancing material during the formation of a semiconductor ingot prior to the semiconductor wafer being separated from the semiconductor ingot. The vacancy enhancing material forms vacancies at a high density within the semiconductor ingot, and the vacancies form bulk micro defects within the semiconductor wafer during high temperature processes such as annealing. These bulk micro defects help to provide support and strengthen the semiconductor wafer during subsequent processing and helps to reduce or eliminate a fingerprint overlay that may otherwise occur.

Abstract: The present invention relates to a process for the preparation of hulk or thin-film single-crystals of cubic sesquioxides (space group No. 206, Ia-3) of scandium, yttrium or rare earth metals doped or not doped with lanthanide ions having a valency of +III by a high-temperature flux growth technique and to the applications of the nondoped single-crystals obtained according to this process, in particular in the optical field.

Abstract: A method for preparing semiconductor nanocrystals comprises reacting cation precursors and anion precursors in a reaction mixture including one or more acids, one or more phenol compounds, and a solvent to produce semiconductor nanocrystals having a predetermined composition. A method for forming a coating on at least a portion of a population of semiconductor nanocrystals is also disclosed. The method comprises forming a first mixture including a population of semiconductor nanocrystals, one or more amine compounds, and a first solvent; adding cation precursors and anion precursors to the first mixture at a temperature sufficient for growing a semiconductor material on at least a portion of an outer surface of at least a portion of the population of semiconductor nanocrystals; and initiating addition of one or more acids to the first mixture after addition of the cation and anion precursors is initiated. Semiconductor nanocrystals and populations thereof are also disclosed.

Abstract: A method and apparatus for the physico-chemical encoding of a collection of beaded resin (“beads”) to determine the chemical identity of bead-anchored compounds by in-situ interrogation of individual beads. The present invention provides method and apparatus to implement color-coding strategies in applications and including the ultrahigh-throughput screening of bead-based combinatorial compounds libraries as well as multiplexed diagnostic and environmental testing and other biochemical assays.

Abstract: Systems and methods for removing material, e.g., linters, from seeds, e.g., ginned cottonseeds, are provided. The systems and methods involve rotating the seeds in a rotatable drum having a plurality of longitudinal brushes. The centrifugal force created by the rotation of the drum and the plurality of longitudinal brushes urge the seeds against an interior surface of the drum that is lined with a brush insert. In this way, work is performed that removes the material from the exterior of the seeds. The material is removed using reduced pressure and the processed seeds are removed. The system may include a brush insert that is easily removed from the rotatable drum. Other systems and methods are disclosed.

Abstract: A yarn producing apparatus includes front rollers movable while carbon nanotube (CNT) fibers are running and aggregates the CNT fibers. Each of the front rollers includes a groove provided on an outer circumference thereof to aggregate the CNT fibers.

Abstract: A high temperature resistant textile sleeve and method of construction thereof is provided. The textile sleeve has a flexible, tubular knit wall of thermoplastic yarns. The yarns are tightly knit with weft knit stitches extending along a circumferential direction about the tubular knit wall to provide a substantially smooth inner surface and a substantially smooth outer surface. The yarns are knit in a tricot stitch pattern, wherein the tricot knit stitches extend along a circumferentially direction of the sleeve wall.