Abstract: An assay for a GCH1 allele and associated genotype for the screening, prediction, diagnosis, prognosis, treatment and treatment response of psychiatric, neuropsychiatric, and neurological disorders, such as schizophrenia, schizoaffective disorder and bipolar disorder, and for defining treatments of such disorders. The presence of a variant in the GCH1 gene, alone or in conjunction with a measurement of low or altered biopterin, or altered BH4 system measures, is used to screen or diagnose subjects at risk for developing a psychiatric, neuropsychiatric, or neurological disorder. The genetic assay, with or without a biopterin or BH4 system assay, may also be used to determine treatment regimens. For subjects with an impaired BH4 system, treatments to increase or normalize biopterin, BH4, or the BH4 system can also be used, such as BH4 supplementation, lithium treatment, phenylalanine treatment, or other treatments and therapies.

Abstract: Provided herein is technology relating to detecting neoplasia and particularly, but not exclusively, to methods, compositions, and related uses for detecting neoplasms such as cholangiocarinoma.

Abstract: Arrays of nucleic acid molecules, kits, methods of genotyping and marker assisted bovine breeding methods based on novel SNPs on genes of the bovine transforming growth factor-? (TGF-?) signaling pathway for improved bovine fertilization rate. The methods and compositions of the present invention are related to SNPs in the DNA-binding protein inhibitor 3 (ID3) gene, and in the bone morphogenetic protein 4 (BMP4) gene corresponding to position 2702 of SEQ ID NO: 2. Also disclosed are methods for determining viability of developing bovine embryos by measuring the expression level of one or more target genes in the TGF-signaling pathway, and selecting for implantation only embryos whose target gene expression level is not up-regulated.

Abstract: A heat treatment technique may include heating an alloy component to a temperature above a transition temperature of the alloy or heating an alloy component to a temperature below the transition temperature of the alloy. The heat treatment technique further may include cooling a first portion of the alloy component at a first cooling rate, and cooling a second portion of the alloy component at a second cooling rate different than the first rate. The first cooling rate may result in formation of a plurality of first precipitate phase domains comprising a first average size in the first portion, and the second cooling rate may result in formation of a plurality of second precipitate phase domains comprising a second average size in the second portion. The average size of the first precipitate phase domains may be different than the average size of the second precipitate phase domains.

Abstract: A process for manufacturing a perforation gun casing includes providing a perforation gun housing that has a wall of nominal thickness and at least one scallop. Each scallop is a portion of the wall having a reduced thickness relative to the nominal wall thickness. The process also includes applying a selective annealing process to the perforation gun casing. The selective annealing process affects the material properties of the scallop but generally does not substantially affect the material properties of the portions of the wall having a nominal thickness.

Abstract: A method for hot forming, in particular for press hardening, a component is disclosed, wherein in a local region of the component a reduced martensitic hardness is produced by locally reducing a forming pressure which is exerted on a surface of the component.

Abstract: A method is disclosed for the operationally reliable production of a cold-rolled flat steel product of ?0.5 mm in thickness for deep-drawing and ironing applications. In the method, a steel melt which (in wt %) comprises up to 0.008% C, up to 0.005% Al, up to 0.043% Si, 0.15-0.5% Mn, up to 0.02% P, up to 0.03% S, up to 0.020% N and in each case optionally up to 0.03% Ti and up to 0.03% Nb and, as a remainder, iron and unavoidable impurities, is, with the omission of a Ca treatment, subjected to a secondary metallurgical treatment which, in addition to a vacuum treatment, comprises a ladle furnace treatment and during which the steel melt to be treated is kept under a slag, the Mn and Fe contents of which are, in sum total, <15 wt %. From the steel melt, a thin slab or a cast strip are produced, which are subsequently hot-rolled to form a hot strip with a thickness of <2.5 mm and wound to form a coil. Subsequently, the hot strips are cold-rolled to form a flat steel product of up to 0.5 mm in thickness.

Abstract: A dual phase stainless steel pipe includes tensile yield strength YSLT of 689.1 MPa to 1000.5 MPa in a pipe axis direction of the dual phase stainless steel pipe, in which the tensile yield strength YSLT, a compressive yield strength YSLC in the pipe axis direction, a tensile yield strength YSCT in a pipe circumferential direction of the dual phase stainless steel pipe, and a compressive yield strength YSCC in the pipe circumferential direction satisfy all Expressions (1) to (4), 0.90?YSLC/YSLT?1.11??(1) 0.90?YSCC/YSCT?1.11??(2) 0.90?YSCC/YSLT?1.11??(3) 0.90?YSCT/YSLT?1.11??(4).

Abstract: A method for producing a tire rasp blade for mounting on a rasp hub is described. The tire rasp blade has a blade body and blade teeth. A main part of the tire rasp blade is austenitized by heating the main part to an austenitization temperature. The tire rasp blade is then tempered. The austenitizing process is performed by induction heating the tire rasp blade until the austenitization temperature is reached. The austenitizing process is followed by a quenching process, wherein the quenching is started before austenitization temperature is reached, whereby the quenching process briefly overlaps the induction heating. A tire rasp blade is also described.

Abstract: There is described a process completely performed in aqueous phase, which provides a heat etching of lead glass with aqueous solutions of strong alkali followed by an electrolytic treatment of the suspension so obtained, in order to recover metallic lead and obtain soluble silicates, separated from insoluble silicates, both lead-free. The process also provides for the production of pure silica, derived from the soluble silicates, and a possible use thereof to increase the ratio between silica and sodium oxide, which characterizes the specifications of the soluble silicates. The electrolysis for the recovery of metallic lead is implemented in a cell in which the polarity of the electrodes is periodically reversed, to obtain the detachment of the metallic lead deposited on the cathodes.

Abstract: An aluminum alloy having excellent formability and elasticity includes Ti, B, Mg, and the Al, wherein a composition ratio of Ti:B:Mg is 1:3.5˜4.5:1, and AlB2 and TiB2 are present as reinforcing phases.

Abstract: Processes for the production of nickel-titanium mill products are disclosed. A nickel-titanium alloy workpiece is cold worked at a temperature less than 500° C. The cold worked nickel-titanium alloy workpiece is hot isostatic pressed (HIP'ed).

Abstract: A high strength and high toughness magnesium alloy, characterized in that it is a plastically worked product produced by a method comprising preparing a magnesium alloy cast product containing a atomic % of Zn, b atomic % of Y, a and b satisfying the following formulae (1) to (3), and the balance amount of Mg, subjecting the magnesium alloy cast product to a plastic working to form a preliminary plastically worked product, and subjecting the preliminary plastically worked product to a heat treatment, and it has a hcp structure magnesium phase and a long period stacking structure phase at an ordinary temperature; (1) 0.5?a<5.0 (2) 0.5<b<5.0 (3) ?a???b.

Abstract: A method for preparing an article including a nickel-based superalloy is presented. The method includes heat-treating a workpiece including a nickel-based superalloy at a temperature above a gamma-prime solvus temperature of the nickel-based superalloy and cooling the heat-treated workpiece with a cooling rate less than 50 degrees Fahrenheit/minute from the temperature above the gamma-prime solvus temperature of the nickel-based superalloy so as to obtain a cooled workpiece. The cooled workpiece includes a gamma-prime precipitate phase having an average particle size less than 250 nanometers at a concentration of at least 10 percent by volume, and is substantially free of a gamma-double-prime phase. An article having a minimum dimension greater than 6 inches is also presented. The article includes a material that has a gamma-prime precipitate phase having an average particle size less than 250 nanometers, and is substantially free of a gamma-double-prime phase.

Abstract: A vapor deposition unit (1) includes a vapor deposition mask (50), a vapor deposition source (10), and a limiting plate unit (20). The limiting plate unit (20) includes (i) a plurality of first limiting plates (32) separated from each other in an X axis direction and (ii) a plurality of second limiting plates (42) disposed directly above the first limiting plates (32) in a plan view and separated from each other in the X axis direction. At least two second limiting plates (42) are arranged in the X axis direction for each first limiting plate (32).

Abstract: An IMC evaporator boat-thermal insulation cartridge assembly that includes an IMC evaporator boat and a thermal insulation cartridge, which has a container containing a thermal insulation body containing a cavity. The IMC evaporator boat is received within the cavity so as to define an air space between the IMC evaporator boat and the thermal insulation body. A heater is contained within the air space.

Abstract: Provided is a method for supplying a deposition material including a heating step of heating and evaporating a deposition material accommodated in a material accommodating section in which the deposition material is accommodated, a supply step of supplying the deposition material into the material accommodating section by feeding and melting a deposition material in a solid phase toward the melted deposition material in the material accommodating section, and a melted state detection step of detecting a melted state of the deposition material in the solid phase after supply in the supply step.

Abstract: A plasma etching source installable into at least one of multiple compartments of a sputter deposition tool. The plasma etching source includes a first mounting plate and at least one electrode plate coupled to the first mounting plate. A gas inlet is included in the first mounting plate of the plasma etching source.

Abstract: A method of forming a layer including disposing a first target and a second target to face each other with a first space therebetween, disposing a substrate to face the first space, generating plasma between the first target and the second target to perform sputtering on the substrate, disposing a capture net between the substrate and the the first space, and capturing anions and/or electrons that propagate toward the substrate from the first space.

Abstract: A magnetron sputtering device is disclosed and includes a magnetic levitation track and a supporter which is levitated on the magnetic levitation track. The supporter includes a magnetic track fixed on the supporter via a plurality of pads; each of the pads includes a first insulation plate and a second insulation plate, the first insulation plate and the magnetic track are connected via a first fastener, the second insulation plate and the supporter are connected via a second fastener, and the second fastener and the first fastener are not in contact with each other; the first insulation plate and the second insulation plate are connected via a third fastener, the third fastener is not in contact with both the magnetic track and the supporter, and the third fastener is not in contact with both the first fastener and the second fastener.

Abstract: A plasma processing method includes forming a deposition film containing silicon as a component in a processing chamber by generating a first plasma in the processing chamber; plasma etching of a sample in which a film containing a metal is formed in the processing chamber; and removing of a metal-based reaction product by generating a second plasma including an element having reducibility and halogen. The plasma processing method further includes removing the deposition film by a third plasma generated by using gas containing a fluorine element; and removing residual gas by a fourth plasma.

Abstract: A method for making an aircraft brake disc includes: a first step of manufacturing a rotary disc preform for manufacturing a rotary disc and a fixing disc preform for manufacturing a fixing disc; and a second step of densifying the rotary disc preform such that density continuously increases from the center to the outside of the rotary disc and of densifying the fixing disc preform such that density continuously decreases from the center to the outside of the fixing disc.

Abstract: A method for synthesizing a multilayer graphene is provided. Specifically, the multilayer graphene can be produced by performing a step of forming a catalytic metal layer on a substrate, a step of heat-treating the catalytic metal layer on the substrate while supplying methane gas, and a step of synthesizing a multilayer graphene on the heat-treated catalytic metal layer. As described above, the multilayer graphene having a large area can be grown directly on a substrate, by heat-treating the catalytic metal layer using methane gas, prior to the step of synthesis of graphene. In addition, as the the number of layer of the multilayer graphene can be controlled by changing the synthesis time of the multilayer graphene, the multilayer graphene with the desired number of layers can be easily produced.

Abstract: A cutting tool comprises a base including a hard alloy and a coating layer located on a surface of the base, wherein the coating layer comprises at least one TiCN layer, an Al2O3 layer and an outermost layer which are laminated in order from a side of the base, and a content of Cl at a thickness-center position of the TiCN layer is higher than a content of Cl at a thickness-center position of the outermost layer and the content of Cl at the thickness-center position of the outermost layer is higher than a content of Cl at a thickness-center position of the Al2O3 layer in a glow-discharge emission spectrometry (GDS analysis).

Abstract: A system and technique that improve the quality of substrate processing may include a plurality of processing chambers; a vacuum transfer chamber; a plurality of transfer chambers; a plurality of gate valves; a plurality of first gas supply units configured to supply an inert gas to a substrate; a transfer robot; and a control unit for controlling the plurality of first gas supply units and the transfer robot to: supply the inert gas to the substrate at a first flow rate when a distance between a gas supply port and the substrate passing through the plurality of gate valves is a first distance; and supply the inert gas to the substrate at a second flow rate greater than the first flow rate when the distance between the gas supply port and the substrate is greater than the first distance when the substrate passes through the plurality of gate valves.

Abstract: A deposition apparatus includes a chuck in a process chamber, the chuck having a top surface on which a substrate is loaded, a showerhead disposed over the chuck, and a fence extension disposed in the process chamber. Plasma is generated in a space between the showerhead and the loaded substrate during a deposition process. The fence extension at least partially confines the plasma in the space during the deposition process, thereby enabling improved thickness uniformity and reliability of a layer deposited on the loaded substrate during the deposition process.

Abstract: The present disclosure relates to methods and apparatus for an atomic layer deposition (ALD) processing chamber for device fabrication and methods for replacing a gas distribution plate and mask of the same. The ALD processing chamber has a slit valve configured to allow removal and replacement of a gas distribution plate and mask. The ALD processing chamber may also have actuators operable to move the gas distribution plate to and from a process position and a substrate support assembly operable to move the mask to and from a process position.

Abstract: Apparatus and methods for processing a semiconductor wafer including a two-axis lift-rotation motor center pedestal with vacuum capabilities. Wafers are subjected to a pressure differential between the top surface and bottom surface so that sufficient force prevents the wafer from moving during processing, the pressure differential generated by applying a decreased pressure to the back side of the wafer through interface with the motor assembly.

Abstract: The present invention relates to a method for checking a discharge inception voltage of a dielectric material, a method for forming a displacement field on the dielectric materials comprising applying a voltage the same as or higher than the discharge inception voltage generated by an external field obtained from the above to the dielectric material to which electrodes are connected, a method for forming plasma on the surfaces of the dielectric material comprising injecting reaction gases and applying a voltage the same as or higher than the discharge inception voltage obtained above to the dielectric material to which electrodes are connected, a method for forming a displacement field on the entire surface of the dielectric material comprising applying a voltage the same as or higher than the discharge inception voltage obtained above to the dielectric material to which electrodes are connected, and a dielectric material which is modified, in which the surfaces thereof are treated with plasma by the methods

Abstract: A plasma processing apparatus, to which process control such as APC is applied, includes: a processing chamber in which plasma processing is performed on a sample; and a plasma processing control device which performs control to optimize a condition for plasma processing which recovers the status inside a processing chamber, in which plasma processing is performed, based on a waiting time from the time when plasma processing for a second lot, which is a lot immediately before a first lot, is completed to the time when plasma processing for the first lot is started, and the content of plasma processing for the second lot.

Abstract: Embodiments disclosed herein generally relate to a substrate temperature monitoring system in a substrate support assembly. In one embodiment, the substrate support assembly includes a support plate and a substrate temperature monitoring system. The support plate has a top surface configured to support a substrate. The substrate temperature monitoring system is disposed in the substrate support plate. The substrate temperature monitoring system is configured to measure a temperature of the substrate from a bottom surface of the substrate. The substrate temperature monitoring system includes a window, a body, and a temperature sensor. The window is integrally formed in a top surface of the support plate. The body is embedded in the support plate, through the bottom surface. The body defines an interior passage. The temperature sensor is disposed in the interior passage beneath the window. The temperature sensor is configured to measure the temperature of the substrate.

Abstract: The invention concerns a method of forming a graphene layer involving: heating a support layer in a reaction chamber; and forming the graphene layer on a surface of the support layer by: a) during a first time period, introducing into the reaction chamber an organic compound gas to cause a formation of carbon atoms on the surface; b) during a second time period after the first time period, reducing a rate of introduction of the organic compound gas into the reaction chamber and introducing into the reaction chamber a further gas, wherein the further gas is a carbon etching gas; and repeating a) and b) one or more times.

Abstract: In a gas flow monitoring method using a MFC (a flow control device) for controlling a flow rate of process gas from a process gas supply source and supply the process gas to a predetermined process chamber, a start shut-off valve placed upstream of the MFC, and a pressure gauge placed between the start shut-off valve and the MFC, the start shut-off valve is closed and a drop of pressure on an upstream side of the MFC is measured by the pressure gauge to measure a flow rate of the MFC, thereafter, the start shut-off valve is opened to monitor the flow rate of the MFC. The MFC is switched from an ON state to an OFF state before the start shut-off valve is opened. The method enables in-line monitoring a low rate of process gas without affecting a semiconductor manufacturing process.

Abstract: An object is to provide a novel composition for blackening treatment that can sufficiently blacken copper circuits of printed wiring boards, circuits made of silver paste, and other various articles containing a copper-based metal, such as copper or a copper alloy, or a silver-based metal, such as silver or a silver alloy, without impairing the smoothness of the copper-based metal or silver-based metal.

Abstract: In one aspect, coated cutting tools are described herein comprising a substrate and a coating comprising a refractory layer deposited by physical vapor deposition adhered to the substrate, the refractory layer comprising M1-xAlxN wherein x?0.68 and M is titanium, chromium or zirconium, the refractory layer including a cubic crystalline phase and having hardness of at least 25 GPa.

Abstract: There is disclosed an apparatus for use in an electroetching or electrodeposition process in which material is etched from or deposited onto the surface of an electrically conductive component. The apparatus comprises a support for supporting the component within a tank containing an electrolytic solution; and a first-polarity electrode arranged to be located within the tank and immersed in the electrolytic solution and shaped to surround at least a part of the component in a contactless manner. In use, an electric field produced by the first-polarity electrode results in an electric variance between at least a part of the component and a second-polarity electrode having a polarity opposite to that of the first-polarity electrode. An electroetching and an electrodeposition process are also disclosed.

Abstract: The presently disclosed apparatus and method offer the capability to electroplate pure metals or alloys onto substrates, having no current collectors or being connected to the power supply by a low conductivity seed layer. Thus, the disclosed system enables pure metal or alloy deposition on various substrates, including flexible electronic circuits, wafers for IC processing, and discrete electronic devices in surface finishing applications.

Abstract: The embodiments described herein relate to forming anodized films that have a white appearance. In some embodiments, an anodized film having pores with light diffusing pore walls created by varying the current density during an anodizing process is described. In some embodiments, an anodized film having light diffusing micro-cracks created by a laser cracking procedure is described. In some embodiments, a sputtered layer of light diffusing aluminum is provided below an anodized film. In some embodiments, light diffusing particles are infused within openings of an anodized layer.

Abstract: Provided is a method for manufacturing a silicon carbide single crystal capable of easily separating a silicon carbide single crystal from a pedestal. The method includes the step of fixing a seed substrate to a pedestal with a stress buffer layer being interposed therebetween, the step of growing a silicon carbide single crystal on the seed substrate, the step of separating the silicon carbide single crystal from the pedestal at the stress buffer layer, and the step of removing a residue of the stress buffer layer adhering to the silicon carbide single crystal subjected to the step of separating.

Abstract: An apparatus for growing diamonds, the apparatus comprising: one or more chambers, each chamber is in fluid connection with one or more other chambers, each chamber comprising one or more substrate stage assembly within the chamber to support a substrate stage having a plurality of diamond seeds disposed thereon.

Abstract: A susceptor supports a semiconductor wafer and includes a substantially cylindrical body comprising an outer rim having an upper surface. The body also includes a recess extending into the body from the upper surface to a recess floor such that the recess is sized and shaped for receiving the wafer therein. The body further includes a ledge extending between the rim and the recess floor. The ledge includes a ramp comprising a first surface, a second surface, and a third surface. The first surface is oriented at a first angle with respect to the upper surface; the second surface is oriented at a second angle oriented with respect to the upper surface; and the third surface is oriented at a third angle with respect to the upper surface. Further, the second angle is greater than the first angle.

Abstract: Knit fabrics having ceramic strands, thermal protective members formed therefrom and to their methods of construction are disclosed. Methods for fabricating thermal protection using multiple materials which may be concurrently knit are also disclosed. This unique capability to knit high temperature ceramic fibers concurrently with a load-relieving process aid, such as an inorganic or organic material (e.g., metal alloy or polymer), both small diameter wires within the knit as well as large diameter wires which provide structural support and allow for the creation of near net-shape performs at production level speed. Additionally, ceramic insulation can also be integrated concurrently to provide increased thermal protection.

Abstract: A knitted component may include a knit element that has an auxetic portion configured to move between a first position and a second position as the knitted component stretches. The knitted component may also include a tensile strand inlaid within at least one of a course and a wale of the knit element, where the tensile strand extends through the auxetic portion, and where the tensile strand is selectively securable to the knit element via a securement device. The securement device may be spaced from the auxetic portion.

Abstract: There is provided a method for knitting a knitted fabric capable of forming a decoration unit of a novel shape using a flat knitting machine. A decoration unit (2) is formed on a surface of a base knitted fabric portion (1), the decoration unit (2) being configured by a lower edge (2D) extending in a knitting width direction of the base knitted fabric portion (1), a left edge (2L) extending in a direction intersecting the knitting width direction from a left end of the lower edge (2D), and a right edge (2R) extending in a direction intersecting the knitting width direction from a right end of the lower edge (2D). The lower edge (2D) is configured by a cross-over yarn extending in the knitting width direction of the base knitted fabric portion (1). The left edge (2L) and the right edge (2R) are configured by stitches stretched in a direction intersecting the knitting width direction. The cross-over yarn and the stitches are knitted all at once.

Abstract: A method is provided for producing a fiber preform for a composite fiber component. In the method, at least one first fiber structure is braided in a braiding process over the entire length of the fiber preform to be produced and at least one second fiber structure is wound in a winding process over part of the length of the fiber preform to be produced.

Abstract: A rotary laundry rod structure of a washing machine includes a main body and a connecting member. The surface of the main body is provided with a plurality of protrusions. The protrusions each have a resistant surface for resisting water in the washing machine. The connecting member has a pivot portion pivotally connected to an inner tank of the washing machine. The connecting member is fixedly connected to the main body. When the resistant surface of the main body is lashed by the water, the connecting member is turned relative to the inner tank of the washing machine to cause rotary turbulence so as to enhance the washing effect.

Abstract: A laundry treatment apparatus includes a cabinet having an upper surface, the upper surface being configured to receive an object thereon, a drawer adapted to be drawn from the cabinet, a drum disposed in the drawer and defining a space for receiving laundry, a driving unit configured to rotate the drum, a control unit configured to control the driving unit, and a connector unit configured to impact an ability of the control unit to control operation of the driving unit based on whether or not the object is placed on the upper surface of the cabinet by preventing the control unit from controlling operation of the driving unit based on the object being absent from the upper surface of the cabinet and by allowing the control unit to control operation of the driving unit based on the object being placed on the upper surface of the cabinet.

Abstract: Disclosed is a washing machine having an improved structure of enabling laundry to be put into the washing machine without restraint, the washing machine including a cabinet forming an external appearance of the washing machine, and provided at a front side thereof with an inlet port, a tub provided in the cabinet and accommodating wash water, a drum rotatably provided in the tub, and a door installed at the cabinet to open and close the inlet port, wherein the door is provided with a subsidiary door that is freely open and closed independent of the door during a washing cycle.

Abstract: The present invention relates to a washing machine which includes a cylindrical part having a cylindrical shape and at least one balancer installed in the cylindrical part. The balancer includes a first balancer housing provided with a race in an annular shape with an open top and a second balancer housing to be coupled with the first balancer housing to cover the open top of the race. The balancer is installed in the cylindrical part in such a way that a coupling portion of the first balancer housing and the second balancer housing corresponding to an inner circumferential surface of the cylindrical part is covered by the cylindrical part, thereby reinforcing a strength of the balancer by the cylindrical part.

Abstract: A washing machine, a method and computer readable recording medium. The washing machine includes a washing spindle and a spin-drying spindle, a coupling that is movable to be engaged with a rotation preventing unit of the washing machine so that power of the driving motor is transferred to the washing spindle but not to the spin-drying spindle, and is movable to a position in which the coupling is not engaged with the rotation preventing unit so that power of the driving motor is transferred to both the washing spindle and the spin-drying spindle, and a control device configured to, in a washing mode of the washing machine, bring the coupling into contact with the rotation preventing unit, cause the coupling to rotate in first and second directions so that the coupling is engaged with the rotation preventing unit, and determine an engagement state by test-operating the driving motor.