Abstract: A high-efficiency method for producing metal from metal oxide by carbothermic reduction includes step in which a holed cake is provided, which has a composition comprising a metal oxide, a carbonaceous reducing agent, and a binder, and the holed cake has a plurality of holes. The method continues with step in which the holed cake is placed in a high-temperature furnace for carbothermic reduction, to reduce the metal oxide in the holed cake into a metal.

Abstract: A low alloy high strength thick-walled seamless steel pipe for oil country tubular goods is provided having a wall thickness of 40 mm or more and a yield strength of 758 MPa or more, the steel pipe including a composition containing, in terms of mass %, C: 0.25 to 0.31%, Si: 0.01 to 0.35%, Mn: 0.55 to 0.70%, P: 0.010% or less, S: 0.001% or less, O: 0.0015% or less, Al: 0.015 to 0.040%, Cu: 0.02 to 0.09%, Cr: 0.8 to 1.5%, Mo: 0.9 to 1.6%, V: 0.04 to 0.10%, Nb: 0.005 to 0.05%, B: 0.0015 to 0.0030%, Ti: 0.005 to 0.020%, and N: 0.005% or less, and having Ti/N of 3.0 to 4.0, with the balance being Fe and inevitable impurities, wherein a cumulative frequency rate at a measurement point at which a Mo segregation degree by a predetermined expression is 1.5 or more is 1% or less.

Abstract: Provided is a heat treatment apparatus (1), including: a heating unit (2), which is configured to inductively heat a workpiece (W) to a target temperature; and a drive mechanism, which is configured to move a plurality of the coaxially held workpieces (W) relative to the heating unit (2) being in an energized state in an axial direction of the workpiece (W), wherein the heating unit (2) includes: a plurality of coil members (11) respectively including a ring-shaped coil portion (11a) arranged coaxially with the workpiece (W) so as to be capable of surrounding the workpiece (W); and a frame body (21), which is configured to support each of the plurality of coil members (11) so as to be movable in the axial direction of the workpiece while maintaining the coaxial arrangement between the coil portions (11a).

Abstract: To provide a grain-oriented electrical steel sheet that has better magnetic property than conventional ones, in hot band annealing of the hot rolled steel sheet obtained by a predetermined step, an average heating rate from ordinary temperature to 400° C. is set to 50° C./s or more, and a time to reach 900° C. from 400° C. is set to 100 sec or less.

Abstract: Provided is a Cu-containing low alloy steel having excellent balance between strength and low-temperature toughness. The Cu-containing low alloy steel has a chemical composition comprising, by mass %, C: 0.01 to 0.08%, Si: 0.10 to 0.40%, Mn: 0.80 to 1.80%, Ni: 0.80 to 2.50%, Cr: 0.50 to 1.00%, Cu: 0.80 to 1.50%, Mo: 0.20 to 0.60%, Al: 0.010 to 0.050%, Nb: 0.030 to 0.080%, and N: 0.005 to 0.020%, and further comprising Ca: 0.010% or less as needed, and consisting of Fe and inevitable impurities as the balance; has a 0.2% yield strength of 525 MPa or higher. The Cu-containing low alloy steel has a ductile-brittle fracture appearance transition temperature (FATT) as measured by the 2 mm V-notch Charpy impact test of ?70° C. or less.

Abstract: A steel sheet and a method for producing the steel sheet are provided. The steel sheet is provided having a composition including C: 0.05% to 0.15%, Si: 0.1% or less, Mn: 1.0% to 2.0%, P: 0.10% or less, S: 0.030% or less, Al: 0.10% or less, and N: 0.010% or less, and including one or two or more of Ti, Nb, and V, the remainder being iron and incidental impurities. The steel sheet has a microstructure containing, on an area percent basis, ferrite: 80% or more, and bainite and martensite: 1% to 20% in total. The ferrite has an average grain size of 10.0 ?m or less, and a phase containing bainite and martensite has an average grain size of 3.0 ?m or less. The ratio of the average grain size of the phase containing bainite and martensite to the average grain size of the ferrite is 0.3 or less.

Abstract: An austenitic, low-density, high-strength steel strip or sheet having a high ductility, and a method of producing the steel strip or sheet, and for its use.

Abstract: Provided is a method of recovering gold, and optionally silver, from gold-bearing, and optionally silver-bearing, double refractory raw material, comprising the steps of (a) leaching the said gold-bearing, and optionally silver-bearing, double refractory raw material in a chloride containing leaching solution to dissolve gold and to obtain a leach solution comprising gold, and optionally silver, in solution, whereby the redox of leaching solution in the chloride leaching step is above 550 mV vs. Ag/AgCl; and simultaneously contacting the said leach solution comprising gold, and optionally silver, in solution with a re-sorptive material to obtain a gold-containing, and optionally silver-containing, re-sorptive material; and (b) recovering gold and optionally silver from the said gold-containing, and optionally silver-containing, re-sorptive material.

Abstract: A method of leaching chalcopyrite ores includes the steps of forming agglomerates of fragments of chalcopyrite ores and silver and leaching the agglomerates with suitable leach liquor.

Abstract: A hot extruded material for a cylindrical sputtering target is provided, in which a purity of copper is in a range of 99.99 mass % to 99.9995 mass %, an Al content is 0.

Abstract: The present invention discloses a liquid metal thermal interface material having an anti-melt characteristic and a preparation method thereof. The liquid metal thermal interface material is characterized by comprising, in percentage by weight, 20-40 wt % of indium, 0-6 wt % of bismuth, 0-2 wt % of antimony, 0-3 wt % of zinc, 0-0.6 wt % silver, 0-0.3 wt % of nickel, 0-0.8 wt % of cerium, 0-0.6 wt % of europium and the balance of tin. The liquid metal thermal interface material has excellent thermal conductivity and chemical stability in an operating environment of an insulated gate bipolar transistor (IGBT), and thus is very suitable for IGBT devices in large-scale industrial production and practical applications.

Abstract: The present invention provides a Ni-based superalloy powder for use in additive manufacturing, including, on the basis of mass %: 0 to 0.2% C; 0.05 to 1.0% Si; 0.05 to 1.0% Mn; 10.0 to 25.0% Cr; 0.01 to 10% Fe; 0.1 to 8.0% Al; 0.1 to 8.0% Ti; 0.002% or less S and/or 0.10% or less N; and the balance being Ni and incidental impurities. The Ni-based superalloy powder of the invention allows production of a good sintered body even during sintering by a rapid melting-rapid solidification process, such as additive manufacturing.

Abstract: The invention relates to an Al casting alloy.

Abstract: Methods of making Ta, Nb, and Ta/Nb sputter targets and targets produced thereby. The improved targets comprise a mixed {100}/{111} texture wherein the % volume of {100} texture is increased over prior art methods and a % volume {111} texture reduced compared to targets made by prior art methods. This results in increased film deposition rates upon sputtering of the improved targets. The methods for manufacturing the improved targets comprise a clock rolling step wherein less than 8% target reduction is achieved at rolling speeds of between about 30-40 rpm.

Abstract: The present invention relates to a high-entropy alloy especially having excellent low-temperature tensile strength and elongation by means of having configured, through thermodynamic calculations, an alloy composition region having an FCC single-phase microstructure at 700° C. or higher, and enabling the FCC single-phase microstructure at room temperature and at an ultra-low temperature. The high-entropy alloy, according to the present invention, comprises: Cr: 3-18 at %; Fe: 3-60 at %; Mn: 3-40 at% ; Ni: 20-80 at %: 3-12 at %; and unavoidable impurities, wherein the ratio of the V content to the Ni content (V/Ni) is 0.5 or less.

Abstract: There is provided with spheroidal graphite cast iron having excellent gas defect resistance where gas defects such as pinholes attributable to the free N are small in number and having mechanical characteristics and machinability equal to or greater than the conventional ones. The spheroidal graphite cast iron consists of, in mass ratio, C: 3.3 to 4%; Si: 2 to 3%; P: not more than 0.05%; S: not more than 0.02%; Mn: not more than 0.8%; Cu: not more than 0.8% (0 is not included); Mg: 0.02 to 0.06%; Ti: 0.01 to 0.04%; V: 0.001 to 0.01%; Nb: 0.001 to 0.01%; and N: 0.004 to 0.008%, with the remnant substantially consisting of Fe and an inevitable impurity.

Abstract: A low alloy high nitrogen steel includes iron and, by weight 0.14-0.60% nitrogen (N); 0.08-0.28% carbon (C); 0.10-2.20% nickel (Ni); 0.25-2.00% manganese (Mn); 1.20-2.70% chromium (Cr); 0.45-1.50% tungsten (W); not more than 0.05% molybdenum (Mo); not more than 0.02% vanadium (V); not more than 0.60% silicon (Si); not more than 0.10% copper (Cu); not more than 0.02% titanium (Ti); not more than 0.02% niobium (Nb); not more than 0.008% aluminum (Al); and not more than 0.02% of any other element with not more than 0.10% total other elements, wherein cobalt (Co) is substitutable for any part of the nickel.

Abstract: A low alloy high nitrogen steel and method of making the same are provided. The method can include forming a steel composition using nitrogen additive constituents and under a first gas atmosphere that can include any of inert argon, nitrogen, or a controlled atmosphere conveying nitrogen. The method can include hot working the steel composition, heating the steel composition to normalize or austenitize, quenching the steel composition at a rate to produce substantially a martensitic microstructure, and heating tempering the steel composition under vacuum or a second gas atmosphere. The second gas atmosphere can include air, controlled atmosphere with ammonia, inert nitrogen, or nitrogen and argon. The steel composition can include iron and, by weight: 0.16-0.60% nitrogen, 0.03-0.20% carbon, 0.10-2.00% nickel, 0.60-2.00% manganese, 1.30-2.80% chromium, and 0.60-1.50% molybdenum. Cobalt can be substituted for any part of the nickel.

Abstract: Provided is a ferritic stainless steel sheet excellent in terms of corrosion resistance with which a decrease in the quantity of surface defects and an improvement in toughness are realized at the same time. The ferritic stainless steel sheet has a chemical composition containing, by mass %, C: 0.020% or less, Si: 0.05% to 0.40%, Mn: 0.05% to 1.00%, P: 0.040% or less, S: 0.030% or less, Al: 0.001% to 0.15%, Cr: 20.0% to 23.0%, Ni: 0.01% to 0.80%, Cu: 0.30% to 0.80%, Ti: 0.10% to 0.50%, Nb: 0.010% to 0.150%, Zr: 0.005% to 0.150%, N: 0.020% or less, and the balance being Fe and inevitable impurities, in which relational expression (1) below is satisfied. Zr?Nb?Ti??(1) (Here, each of Zr, Nb, and Ti in relational expression (1) denotes the content (mass %) of the corresponding chemical element.

Abstract: An Fe-based nanocrystalline alloy is represented by Composition Formula, (Fe(1-a)M1a)100-b-c-d-e-gM2bBcPdCueM3g, where M1 is at least one element selected from the group consisting of Co and Ni, M2 is at least one element selected from the group consisting of Nb, Mo, Zr, Ta, W, Hf, Ti, V, Cr, and Mn, M3 is at least two elements selected from the group consisting of C, Si, Al, Ga, and Ge but necessarily includes C, and 0?a?0.5, 1.5<b?3, 10?c?13, 0<d?4, 0<e?1.5, and 8.5?g?12.

Abstract: A method for making alloy matrix composite, comprising: providing a metal matrix composite, the metal matrix composite includes a metal body and a reinforcement body; placing an alloying element layer on a surface of the metal matrix composite to obtain a first composite structure; rolling the first composite structure to obtain a middle composite structure; repeatedly folding and rolling the middle composite structure to obtain a second composite structure; annealing the second composite structure to obtain the alloy matrix composite.

Abstract: The present disclosure generally provides aluminum alloy products having selectively recrystallized microstructure at one or more surfaces of the product. The disclosure also provides articles of manufacture made from such products, and methods of making such products, such as through casting and rolling. The disclosure also provides various end uses of such products, such as in automotive, transportation, electronics, and industrial applications.

Abstract: A method of low pressure carburizing (LPC) of elements made of iron alloys and of other metals in a device for continuous, in-line thermochemical surface treatment, with a constant time-step, with saturation at a temperature from 820° C. to 1200° C. in gaseous atmosphere, wherein into the vacuum chamber of the device a gaseous carbon carrier is introduced using impulses in a constant flow-time sequence, synchronized with the working time-step of the device.

Abstract: Provided is a nitrided metal surface functionalized with molecules, each molecule comprising at least one binding group and an antimicrobial moiety. The molecules are immobilized on the surface by only covalent interactions between the binding groups of the molecules and nitrogen atoms within the nitrided metal surface. Articles comprising the functionalized nitrided surface find use in inhibiting or reducing the growth of microorganisms on surfaces that are frequently touched. A method for preparing the functionalized nitrided surface comprises contacting a nitrided metal surface with molecules so as to form covalent bonds between the binding groups of the molecules and the nitrogen atoms in the surface, thereby immobilising the molecules on the metal surface.

Abstract: A deposition mask capable of performing high-definition patterning while suppressing position gap between a substrate for vapor deposition and an opening arrangement of the deposition mask during vapor deposition and a manufacturing method thereof are provided. A deposition mask (1) includes a resin film (2) having an opening (4) pattern for forming a thin layer pattern by vapor deposition on a substrate for vapor deposition. The deposition mask (1) includes a low-emissivity layer (5) whose emissivity is lower than that of the resin film (2), which is formed at least partly on a surface of the resin film (2) facing a vapor deposition source, thereby suppressing temperature rise of the resin film (2) due to heat radiated from the vapor deposition source.

Abstract: A vapor deposition machine includes at least two substrate cleaning units, an atmospheric pressure chamber, and a vacuum chamber assembly. The atmospheric pressure chamber is disposed between the substrate cleaning unit and the vacuum chamber assembly. The atmospheric pressure chamber includes a compensation and testing chamber for at least one metal mask at atmospheric pressure and a receiving chamber for the metal mask at atmospheric pressure.

Abstract: A vapor evaporation source is provided. The vapor evaporation source includes a vapor evaporation source body made of conductive material, and the vapor evaporation source body has: a main body configured with a material chamber therein; and a first electrode connection terminal and a second electrode connection terminal disposed on outer sides of the main body. The first electrode connection terminal and the second electrode connection terminal have opposite polarities. After electrification of the first electrode connection terminal and the second electrode connection terminal, the main body itself conducts electricity and generates heat to heat material inside the material chamber.

Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.

Abstract: A stabilized elementary metal structure is disclosed. The stabilized elementary metal structure may include an elementary metal having at least one layer and having a two-dimensional layer structure, and an organic molecular layer provided on at least one of a top surface and a bottom surface of the elementary metal.

Abstract: Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon carbide, silicon nitride, silicon oxide, silicon oxynitride, a carbon-doped silicon nitride, a carbon-doped silicon oxide, or a carbon doped silicon oxynitride film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using the co-deposition of a first compound comprising a carbon-carbon double or carbon-carbon triple bond and a second compound comprising at least one Si—H bond.

Abstract: According to an aspect of a present inventive subject matter, a method for producing a crystalline film includes gasifying a metal source to turn the metal source into a metal-containing raw-material gas; supplying the metal-containing raw-material gas and an oxygen-containing raw-material gas into a reaction chamber onto a substrate; and supplying a reactive gas into the reaction chamber onto the substrate to form a crystalline film under a gas flow of the reactive gas.

Abstract: Disclosed are a substrate processing apparatus and a method of cleaning the apparatus. The apparatus includes a process chamber, a support unit in the process chamber and configured to support a substrate, and a gas injection unit in the process chamber. The gas injection unit includes a first injection portion configured to inject a source gas, a second injection portion facing the first injection portion and configured to inject a reaction gas that reacts with the source gas, and a third injection portion configured to inject a cleaning gas that removes a reactant produced from the source gas and the reaction gas.

Abstract: A gas ejector of a gas supply apparatus includes a nozzle portion. The opening of a first-stage restricting cylinder constituting the nozzle portion has a circular cross-sectional shape with a diameter r1. A second-stage restricting cylinder is continuously formed with the first-stage restricting cylinder along a Z direction. The opening of the second-stage restricting cylinder has a circular cross-sectional shape with a diameter r2, and supplies a source gas supplied from the first-stage restricting cylinder to a low-vacuum processing chamber below. At this time, the diameter r2 is set to satisfy “r2>r1”.

Abstract: Provided are a precursor supply unit, a substrate processing system, and a method of fabricating a semiconductor device using the same. The precursor supply unit may include an outer container, an inner container provided in the outer container and used to store a precursor source, a gas injection line having an injection port, which is provided below the inner container and in the outer container and is used to provide a carrier gas into the outer container, and a gas exhaust line having an exhaust port, which is provided below the inner container and in the outer container and is used to exhaust the carrier gas in the outer container and a precursor produced from the precursor source.

Abstract: Metal coordination complexes comprising an iridium atom coordinated to at least one diazabutadiene based ligand having a structure represented by: where R1 and R4 are independently selected from the group consisting of C1-C4 alkyl and amino groups, and each of R2 and R3 are independently selected from the group consisting of H, C1-C3 alkyl, or amino groups are described. Processing methods using the metal coordination complexes are also described.

Abstract: [Problem] To make an in-plane variation of a plasma density uniform. [Solution] A shower head according to an embodiment of the present technology includes a head body and a shower plate. The head body has an inner space. The shower plate includes a plurality of gas injecting ports communicated with the inner space, a gas injecting surface on which gas is injected from the plurality of gas injecting ports, and a plurality of hole portions disposed on the gas injecting surface. The shower plate is configured in such a manner that surface areas of the plurality of hole portions are radially gradually increased from a center of the gas injecting surface.

Abstract: An injector (1), which is produced from silicon and allows gas to be introduced into process chambers in processes, in particular processes in semiconductor technology, is proposed. The injector (1) is formed as a tube (2), which if appropriate consists of at least two pieces of tube (10) and in which outlet openings for the gas to be introduced into the process chamber are provided. At least one channel (4) is provided in the tube (2) that serves as an injector (1). The profile of the tube (2) serving as the injector (1) is unround, and therefore deviates from a circular profile, with elongated, triangular or star-shaped forms being possible options.

Abstract: A manufacturing method that enables an electrode to be formed on a specific portion of a surface of a sintered ceramic body by a simple technique. A method of manufacturing a ceramic electronic component includes preparing a sintered ceramic body that contains a metal oxide, and forming low-resistance portions that is formed by reducing the resistance of portions of the ceramic body by radiating laser onto electrode-formation regions of surfaces of the ceramic body. The method further includes causing a catalytic metal to selectively adhere to the low-resistance portions by immersing the ceramic body, in which the low-resistance portions have been formed, in a catalytic metal substitution treatment solution, and forming a plating layer that serves as an electrode onto the low-resistance portions by performing electroless plating on the ceramic body to which the catalytic metal has adhered.

Abstract: The invention includes a method of promoting atomic layer etching (ALE) of a surface. In certain embodiments, the method comprises sequential reactions with a metal precursor and a halogen-containing gas. In other embodiments, the etching rate is increased by removing residual species bound to and/or adsorbed onto the surface.

Abstract: Method and apparatus for synthesizing compounds by a low temperature plasma dual-electric field aided gas phase reaction are provided. The method utilizes two different electrode corona discharge fields in a plasma aided reactor to form a plasma dual-electric field, using electric energy to convert gas into gas molecules, atoms, ions and/or free radicals, and then reforming and reducing to obtain organic compounds such as aliphatic hydrocarbons, higher carbon ethers, higher carbon alcohols, higher carbon esters, lower carbon alcohols, and the like; also inorganic compounds such as N2, O2, H2SO4, NH3, and the like. The apparatus includes a reactor having a plasma region of two different corona discharge fields, wherein an alternating current corona discharge field or a positive corona discharge field is set in the first electric field, and a negative corona discharge field is set in the second electric field.

Abstract: The present disclosure provides a method of electroreducing carbon dioxide (CO2). The method of electroreducing carbon dioxide may include feeding a first stream comprising carbon dioxide into a chamber through a chamber inlet, the chamber containing a gas diffusion cathode and a gas diffusion anode; feeding a second stream comprising glycerol or glucose into the chamber, the second stream having a pH of 12 to 14; and applying an electrical potential between the gas diffusion anode and the gas diffusion cathode to reduce the carbon dioxide and oxidize the glycerol or glucose.

Abstract: Oxygen evolution reaction (OER) catalysts and uses thereof are described. An OER catalyst can include a carbon support, a discontinuous catalytic cobalt (II,III) oxide (Co3O4) nanolayer in direct contact with the carbon support, and an amorphous continuous carbon layer. The Co3O4 nanolayer is positioned between the carbon support and an amorphous continuous carbon layer.

Abstract: Methods and systems for hydrogen production or production of a reduced target molecule are described, wherein a nicotinamide co-factor dependent membrane hydrogenase or a nicotinamide co-factor dependent membrane enzyme presented on a nanolipoprotein adsorbed onto an electrically conductive supporting structure, which can preferably be chemically inert, is contacted with protons or a target molecule to be reduced and nicotinamide cofactors in presence of an electric current and one or more electrically driven redox mediators.

Abstract: A power supply for a marine water electrolysis system has a control module and at least one power module in communication with the control module. The power module has a first rectifier sub-module and a second rectifier sub-module, where each of the rectifier sub-modules has a current output to an electrolyzer. The power supply has a microcontroller which provides instructions to the at least one power module to provide a specified DC voltage and DC current to the electrolyzer. The sub-modules may be identical, with each sub-module capable of independent operation (at different voltage and current levels). Any number of power modules can be connected in series or in parallel to match the DC voltage and DC current requirements of the electrolyzer. The sub-modules may be stacked in a tower configuration within a rack. Any one or more power modules may be removed from the rack independent of the remaining power modules within the rack without interrupting operation of the electrolyzer.

Abstract: Compositions for making wettable cathodes to be used in aluminum electrolysis cells are disclosed. The compositions generally include titanium diboride (TiB2) and metal additives. The amount of selected metal additives may result in production of electrodes having a tailored density and/or porosity. The electrodes may be durable and used in aluminum electrolysis cells.

Abstract: Methods and systems for producing a three-dimensional structure using electrochemical additive manufacturing are described herein. The methods can comprise injecting a growth control solution into an electrolyte comprising a metal salt to form a growth control region and applying an electric potential to a working electrode to thereby form a layer of metal at a location defined by the growth control region. The injecting and applying steps of the methods can be repeated for form the three-dimensional structure on a layer-by-layer basis.

Abstract: An apparatus for fabricating an electrode structure includes a high voltage unit, a plating material part facing the high voltage unit, and a transfer roll to which a negative voltage is applied. The high voltage unit includes a high voltage roll, and an insulating sheath configured to cover a surface of the high voltage roll. The high voltage roll is applied with a voltage of about 1 kV to about 100 kV, the plating material part is applied with a positive voltage, and the high voltage unit and the transfer roll rotate.

Abstract: A method for creating a chrome-plated surface having a matte finish that typically includes: controlling a resistance of a current bridge circuit; depositing a first chromium layer on a substrate positioned in a chromium bath, wherein the first chromium layer is deposited by supplying current from a power source that is electrically connected to the substrate and to anodes positioned in the chromium bath; etching the first chromium layer by engaging a current bridge that closes the current bridge circuit; depositing a first intermediate chromium layer, wherein the first intermediate chromium layer is deposited by supplying current from the power source; etching the first intermediate chromium layer, wherein the first intermediate chromium layer is etched by engaging the current bridge; and depositing a final chromium layer, wherein the final chromium layer is deposited by supplying current from the power source.

Abstract: A method for coating an article, wherein a surface of the article is at least partially coated with a coating that has a multiplicity of layers, wherein at least one layer of the coating is made of a nickel phosphorus alloy and wherein a mass fraction of the phosphorus in the nickel phosphorus alloy is at least 8%.

Abstract: Various embodiments described herein relate to methods and apparatus for electroplating material onto a semiconductor substrate. In some cases, one or more membrane may be provided in contact with an ionically resistive element to minimize the degree to which electrolyte passes backwards from a cross flow manifold, through the ionically resistive element, and into an ionically resistive element manifold during electroplating. The membrane may be designed to route electrolyte in a desired manner in some embodiments. In these or other cases, one or more baffles may be provided in the ionically resistive element manifold to reduce the degree to which electrolyte is able to bypass the cross flow manifold by flowing back through the ionically resistive element and across the electroplating cell within the ionically resistive element manifold. These techniques can be used to improve the uniformity of electroplating results.