Abstract: The present disclosure provides methods, compositions and devices for isolating virus particles and/or viral nucleic acids from body samples that were stabilized using a stabilizing composition comprising a formaldehyde releaser agent.

Abstract: The present invention disclose a method for detection CPV 2a, 2b, and 2c in a sample by detecting VP2 gene. The signals can be detected by both fluorescent detection system and lateral flow immunochromatographic assay. The second object of this present invention is to provide a method to discriminate the wild type from the vaccine type. The first approach to achieve this object is discriminating wild type from vaccine type by SNP 36, which could be used on both fluorescent detection system and lateral flow immunochromatographic assay. The second approach to achieve this object is discriminating wild type from vaccine type by SNP 899 and SNP 963.

Abstract: A system for fluidized bed reduction of powdered iron ore. Use of high-gas-velocity processing accelerates iron ore reduction speed and greatly improves the gas-treatment capabilities of a unit-cross-sectional fluidized bed. Use of parallel connections involving reduced coal gas lessens the volume of gas passing through a single-stage fluidized bed. Use of serial/parallel-connection processing involving reduced coal gas increases the coal gas utilization rate. The invention achieves the highly-effective reduction of powdered iron ore in a fluidized bed under near-atmospheric pressure. A reduction method based on the present system is also disclosed.

Abstract: A method of cavitation peening may include coupling a moveable water source to a portable nozzle, through a flexible conduit. The method may include positioning the nozzle adjacent a treatment surface and discharging a first and second stream of fluid through a first and second channel of the nozzle, with the second channel concentrically positioned around the first channel. The first stream may have a first pressure, and the second stream may have a second pressure, the first pressure being greater than the second pressure and the two streams combining to generate a cloud of cavitation bubbles.

Abstract: A rail provided by the present invention includes: has a predetermined chemical components, wherein a value of Mn/Cr, which is a ratio of Mn content with respect to Cr content, is within a range of 0.30 to 1.00, structures in a region from a head surface constituted of a surface of a top head portion and a surface of a corner head portion to a depth of 10 mm is 98% by area or more of bainite structures, and an average hardness of the region from the head surface to a depth of 10 mm is in a range of Hv 380 to Hv 500.

Abstract: Methods are for purification of a cobalt containing solution from impurity metals by processing the feed solution through a continuous counter-current ion exchange process comprising of several beds containing cationic ion exchange material arranged in interconnectable zones 1, 2, 3-N in a simulated moving bed arrangement.

Abstract: A method of dissolution of minerals in acid is disclosed. The method comprises providing minerals to be leached in an aqueous solution, supplying acid or an acid precursor to the aqueous solution, thereby forming a reaction mixture comprising acid; supplying energy in the form of a combination of high-voltage electric pulses and ultrasound pulses to the reaction mixture to enhance dissolution of the minerals.

Abstract: An apparatus may comprise a degassing system and a treatment station. The treatment station may comprise a shell, a refractory disposed in the shell, and insulation disposed between the shell and the refractory. The refractory may comprise a first plurality of slots, a second plurality of slots, and a trough. The first plurality of slots may be upstream from the degassing system and the second plurality of slots may be downstream from the degassing system. A first skim brick may be slideably disposed in a first one of the first plurality of slots and a second skim brick may be slideably disposed in a first one of the second plurality of slots. A first filter may be slideably disposed in a second one of the first plurality of slots and a second filter may be slideably disposed in a second one of the second plurality of slots.

Abstract: An object of the present invention is to provide a method for recovering a heavy rare earth element from a workpiece containing at least a heavy rare earth element and an iron group element, which can be put into practical use as a low-cost, simple recycling system. The method for recovering a heavy rare earth element from a workpiece containing at least a heavy rare earth element and an iron group element of the present invention as a means for resolution is characterized by including at least the following step: a workpiece is subjected to an oxidation treatment or mixed with an oxidation-treated R—Fe—B based magnet alloy, and then subjected to a heat treatment in the presence of carbon at a temperature of 1000° C. or more, thereby separating a heavy rare earth element in the form of an oxide from an iron group element.

Abstract: A copper alloy sheet strip with a surface coating layer, including: a copper alloy sheet strip, as a base material, including copper, 1.0 to 4.5% by mass of Ni and/or Co and 0.2 to 1.0% by mass of Si, based on the total amount of the copper alloy sheet strip; and a surface coating layer including a Ni layer, a Cu—Sn alloy layer and a Sn layer formed on a surface of the copper alloy sheet strip in this order. A Cu—Sn alloy layer is partially exposed on an outermost surface of the surface coating layer such that a surface exposed area ratio is from 3 to 75%. A surface roughness of the surface coating layer is 0.15 ?m or more in at least one direction, and 3.0 ?m or less in all directions.

Abstract: A steel strip having a coating of an aluminium-zinc-silicon alloy on at least one surface of the strip is disclosed. The strip is characterised in that the aluminium-zinc-silicon alloy contains less than 1.2 wt. % silicon and also contains magnesium. A method of forming a coating of an aluminium-zinc-silicon alloy on a steel strip is also disclosed. The method includes moving steel strip upwardly through a coating pot containing a bath of an aluminium-zinc-silicon alloy and having an opening in a bottom wall of the pot and forming a coating of the alloy on the strip. The method is characterized by minimizing residence time of steel strip in contact with the aluminium-zinc-silicon alloy bath in the pot.

Abstract: A spray-formed high-speed steel includes chemical components by mass percent of: C: 0.85-1.65%, Si: 0.1-1.2%, Cr: 3.5-8.0%, W: 4.0-6.5%, Mo: 4.5-7.0%, V: 1.0-4.0%, Co: 1.0-8.0%, Mn: 0.2-0.8%, and Nb: 0.2-3.5%, with balance of iron and impurities.

Abstract: A low-alloy steel pipe includes C: 0.15% to less than 0.30%, Si: 0.05 to 1.00%, Mn: 0.05 to 1.00%, P: at most 0.030%, S: at most 0.0050%, Al: 0.005 to 0.100%, O: at most 0.005%, N: at most 0.007%, Cr: 0.10% to less than 1.00%, Mo: 1.0% to not more than 2.5%, V: 0.01 to 0.30%, Ti: 0.002 to 0.009%. Nb: 0 to 0.050%, B: 0 to 0.0050%, Ca: 0 to 0.0050%, Mo/Cr?2.0, and the balance being Fe and impurities. The pipe has a crystal grain size number of 7.0 or more, 50 or more particles of cementite based on equivalent circle diameter and area of the matrix, M2C-based alloy carbide in a number density of not less than 25/?m2, and a yield strength of 758 MPa or more.

Abstract: A stainless steel alloy including essentially of 19 to 22 percent by weight chromium, 8.5 to 10.5 percent by weight nickel, 5.25 to 5.75 percent by weight silicon, 0.25 to 1.2 percent by weight carbon, 4.0 to 6.0 percent by weight niobium, 0.3 to 0.5 percent by weight titanium and the balance iron plus impurities. The impurities may include 0 to 0.2 percent by weight cobalt, 0 to 0.5 percent by weight manganese, 0 to 0.3 percent by weight molybdenum, 0 to 0.03 percent by weight phosphor, 0 to 0.03 percent by weight sulphur, 0 to 0.1 percent by weight nitrogen.

Abstract: A stainless steel alloy comprising essentially of 19 to 22 percent by weight chromium, 8.5 to 10.5 percent by weight nickel, 5.25 to 5.75 percent by weight silicon, 0.25 to 2.0 percent by weight carbon, 4.0 to 10.5 percent by weight molybdenum, 0.3 to 0.5 percent by weight titanium, 0.1 to 0.5 by weight percent nitrogen and the balance iron plus impurities. The impurities may consist of 0 to 0.2 percent by weight cobalt, 0 to 0.5 percent by weight manganese, 0 to 0.3 percent by weight molybdenum, 0 to 0.03 percent by weight phosphor, 0 to 0.03 percent by weight sulphur, 0 to 0.1 percent by weight nitrogen.

Abstract: There is provided a carburization resistant metal material suitable as a raw material for cracking furnaces, reforming furnaces, heating furnaces, heat exchangers, etc. in petroleum and gas refining, chemical plants, and the like. This metal material consists of, by mass %, C: 0.03 to 0.075%, Si: 0.6 to 2.0%, Mn: 0.05 to 2.5%, P: 0.04% or less, S: 0.015% or less, Cr: higher than 16.0% and less than 20.0%, Ni: 20.0% or higher and less than 30.0%, Cu: 0.5 to 10.0%, Al: 0.15% or less, Ti: 0.15% or less, N: 0.005 to 0.20%, and O (oxygen): 0.02% or less, the balance being Fe and impurities. The metal material may further contain one kind or more kinds of Co, Mo, W, Ta, B, V, Zr, Nb, Hf, Mg, Ca, Y, La, Ce and Nd.

Abstract: This disclosure deals with steel alloys containing mixed microconstituent structure that has the ability to provide ductility at tensile strength levels at or above 900 MPa. More specifically, the alloys contain Fe, B, Si and Mn and indicate tensile strengths of 900 MPa to 1820 MPa and elongations of 2.5% to 76.0%.

Abstract: Described herein is a feedstock comprising BMG. The feedstock has a surface with an average roughness of at least 200 microns. Also described herein is a feedstock comprising BMG. The feedstock, when supported on a support during a melting process of the feedstock, has a contact area between the feedstock and the support up to 50% of a total area of the support. These feedstocks can be made by molding ingots of BMG into a mole with surface patterns, enclosing one or more cores into a sheath with a roughened surface, chemical etching, laser ablating, machining, grinding, sandblasting, or shot peening. The feedstocks can be used as starting materials in an injection molding process.

Abstract: A facility for continuously manufacturing a galvanized steel sheet includes a continuous annealing furnace, a snout, and a galvanization bath. The furnace is divided into a heating zone, a soaking zone, and a cooling zone. The bath is directly connected to the furnace through the snout. The facility has a dewpoint meter and a spray port and a suction port for a furnace gas that are provided in at least one of the zones, gas cyclic paths which connect the spray port and the suction port to a refiner, and a dewpoint meter and a humidification device that are provided in the snout. The gas cyclic paths are separately formed for the respective connected zones. The refiner functions so that a measured value of the dewpoint meter is equal to a target dewpoint, and the humidification device functions so that a measured value of the dewpoint meter in the snout is equal to a target dewpoint for the snout.

Abstract: A cooling apparatus for a plated steel sheet according to the present invention comprises: an injection means for injecting a cooling fluid while facing a steel sheet in progress; and an injection width varying means for varying the injection width of the cooling fluid so as to correspond to the width of the steel sheet, installed at the outside of the injection means so as to not interfere with the injection flow path of the cooling fluid.

Abstract: Embodiments of the disclosure provide methods and apparatus for monitoring film properties on a substrate in-situ. In one embodiment, a deposition system is provided. The deposition system includes at least two deposition chambers, and a patterned mask designed specifically for each of the deposition chambers, wherein a first mask of the patterned masks has a first opening formed therethrough outside of a pattern formed thereon, and a second mask of the patterned masks has a first opening formed therethrough outside of a pattern formed thereon, the first opening of the second mask having a position on the second mask that is different than a position of the first opening on the first mask.

Abstract: The disclosure provides a mask assembly comprising a mask which comprises a first surface facing towards an evaporation source and a second surface facing towards an article to be deposited, and pattern openings are formed in the mask, wherein the mask assembly further comprises at least one test sheet which is detachably provided on the mask. The test sheet is provided at a region on the mask where no pattern opening is provided, and is configured such that an evaporation material can be deposited on the test sheet when an evaporation process is performed by using the mask assembly. The disclosure further provides an apparatus and a method for detecting a film thickness of the evaporation material on the mask assembly. With the apparatus, the film thickness of the evaporation material deposited on the mask assembly can be easily detected.

Abstract: Disclosed is a hard film based on tungsten carbide excellent in wear resistance, wherein the composition of the film is defined by W1-x-yCxMy, where 0.01?y?0.2, 0.50?x/(1?x?y)?4.0, and M is one or more selected from Co, Ni, Fe and Cu.

Abstract: A coated article includes a low emissivity (low-E) coating supported by a glass substrate. The low-E coating includes at least one silver (Ag) based infrared (IR) reflecting layer(s) that is provided adjacent to and contacting at least one protective metallic or substantially metallic doped silver layer in order to improve chemical durability characteristics of the low-E coating. The silver based IR reflecting layer and adjacent protective doped silver layer are part of a low emissivity (low-E) coating, and may be sandwiched between at least transparent dielectric layers. A barrier layer including Ni and/or Cr may be provided over and directly contacting the protective doped silver layer in order to further improve durability of the low-E coating.

Abstract: A coated article includes a silver (Ag) based infrared (IR) reflecting layer(s) on a glass substrate that is provided adjacent to and contacting at least one metallic or substantially metallic zinc (Zn) inclusive barrier layer in order to improve chemical durability characteristics of the low-E coating. In certain example embodiments, the silver based layer may be sandwiched between first and second metallic or substantially metallic barrier layers of or including zinc. The IR reflecting layer(s) and zinc based barrier layer(s) are part of a low emissivity (low-E) coating.

Abstract: A method for use in a coating process includes pre-heating a substrate in the presence of a coating material and shielding the substrate during the pre-heating from premature deposition of the coating material by establishing a gas screen between the substrate and the coating material. An apparatus for use in a coating process includes a chamber, a crucible that is configured to hold a coating material in the chamber, an energy source operable to heat the interior of the chamber, a coating envelope situated with respect to the crucible, and at least one gas manifold located near the coating envelope. The at least one gas manifold is configured to provide a gas screen between the coating envelope and the crucible. A second manifold provides gas during a later coating deposition to compress a vapor plume of the coating material and focus the plume on the substrate to increase deposition rate.

Abstract: Disclosed is a process of physical vapor deposition of a material layer on surfaces of a plurality of substrates (11), wherein the plurality of substrates (11) are arranged on a dome (12) which rotates according to a dome rotation axis (300); the material to be deposited is vacuum evaporated thanks to an energy beam from a target (13); the energy beam interacts with a beam impact surface of the target chosen within the list consisting of a part of a main surface (15) and a part of an edge (14) of the target and wherein the material diffuses from the target to the substrates around a main diffusion axis (100) which intersects the dome (12) at an intersection point, I; and the angle ? between the dome rotation axis (300) and the main diffusion axis (100) is chosen within the ranges of +5° to +40° or ?5° to ?40°.

Abstract: A plasma processing apparatus includes a first electrode, a second electrode disposed to face the first electrode, a chamber, a first high-frequency power supply, a direct-current power supply, and a gas supply source. The plasma processing apparatus generates first plasma to form a film of a reaction product on the second electrode by causing the first high-frequency power supply to supply first high-frequency power to the second electrode and causing the gas supply source to supply a first gas into the chamber; and generates second plasma to sputter the film of the reaction product by causing the first high-frequency power supply to supply the first high-frequency power to the second electrode, causing the direct-current power supply to supply direct-current power to the second electrode, and causing the gas supply source to supply a second gas into the chamber.

Abstract: A method of discriminating a state of a sputtering apparatus in which, by sputtering a target, a film is formed on a substrate disposed to lie opposite to the target, the discrimination being made, prior to the film formation on the substrate, as to whether an atmosphere in the vacuum chamber is in a state fit for film formation. As the sputtering apparatus, use is made of one provided inside the vacuum chamber with an isolated space which is isolated from the vacuum chamber by an isolating means (6, 71˜73), the isolated space being for the target and the substrate to lie therein opposite to each other, the sputtering apparatus being so arranged that the isolated space is evacuated accompanied by the evacuation in the vacuum chamber. The vacuum chamber is evacuated to a predetermined set pressure and a gas is introduced therein in this state.

Abstract: The present invention aims at improving and upgrading the conventional devices based on the low temperature magnetron sputtering coating devices. Starting from the material systems, the invention provides a new material system and a manufacturing method thereof based on a high molecular weight polyethylene joint cup to solve the poor binding force problem between the film and the matrix, and the problems of easy oxidization and carbonization of high molecular weight polyethylene with low temperature magnetron sputtering technologies at the same time. On the above basis, the ultra-lubrication performance of graphite-like structure films and ultra-hardness of diamond-like structure films are utilized to construct a nano-scale multilayer structure DLC film alternatively coated with a graphite-like film and a diamond-like film.

Abstract: Embodiments described herein provide methods and apparatus for treating a magnetic substrate having an imprinted, oxygen-reactive mask formed thereon by implanting ions into a magnetically active surface of the magnetic substrate through the imprinted oxygen-reactive mask, wherein the ions do not reduce the oxygen reactivity of the mask, and removing the mask by exposing the substrate to an oxygen-containing plasma. The mask may be amorphous carbon, through which carbon-containing ions are implanted into the magnetically active surface. The carbon-containing ions, which may also contain hydrogen, may be formed by activating a mixture of hydrocarbon gas and hydrogen. A ratio of the hydrogen and the hydrocarbon gas may be selected or adjusted to control the ion implantation.

Abstract: Disclosed is a vapor deposition apparatus comprising an adsorption apparatus disposed in a vapor deposition cavity, wherein the adsorption apparatus comprising: a plurality of magnetic blocks arranged in a matrix disposed on a side of a substrate to be vapor deposited away from a metal mask plate, and a towing apparatus for adjusting each of the magnetic blocks to move up and down relative to the substrate to be vapor deposited. Such a vapor deposition apparatus may cause the metal mask plate to closely fit the substrate to be vapor deposited, such that a correct pattern will be formed when sub-pixel units are vapor deposited, and cause the magnetic fields of all the magnetic blocks to tend to be consistent, avoiding affecting the above-mentioned pattern by a deformation of the metal mask plate due to the inhomogeneity of the magnetic fields.

Abstract: A loader device for loading porous substrates of three-dimensional shapes extending mainly in a longitudinal direction into a reaction chamber of an infiltration oven for densification of the preforms by directed flow chemical vapor infiltration. The device comprising at least one annular loader stage formed by first and second annular vertical walls arranged coaxially relative to each other and defining between them an annular loader space for the porous substrates to be densified. First and second plates respectively cover the bottom portion and the top portion of the annular loader space. The first and second annular vertical walls include support elements arranged in the annular loader space so as to define between them unit loader cells, each for receiving a respective substrate to be densified. The device also comprises gas feed orifices and gas exhaust orifices in the vicinity of each unit loader cell.

Abstract: Described are methods of depositing a metal film by chemical reaction on a substrate. The method comprises: exposing the substrate to flows of a first reactant gas comprising a group 2 metal and a second reactant gas comprising a halide to form a first layer containing a metal halide on the substrate; exposing the substrate to a third reactant gas comprising an oxidant to form a second layer containing a metal peroxide or metal hydroxide on the substrate during; exposing the substrate to heat or a plasma to convert the metal peroxide or metal hydroxide to metal oxide. The method may be repeated to form the metal oxide film absent any metal carbonate impurity.

Abstract: Disclosed is a substrate processing apparatus and method which facilitates to sequentially or repetitively carry out a thin film deposition process and a surface treatment process inside one process space, wherein the substrate processing apparatus comprises a process chamber for providing a process space; a substrate supporter for supporting at least one of substrates and moving the supported substrate in a predetermined direction; a chamber lid confronting the substrate supporter; and a gas distributor for spatially separating process gas for depositing a thin film on the substrate from a surface treatment gas for performing a surface treatment of the thin film, and locally distributing the process gas and the surface treatment gas on the substrate supporter, wherein the gas distributor confronting the substrate supporter is provided in the chamber lid.

Abstract: The present disclosure relates to a semiconductor processing apparatus. The processing chamber includes a chamber body and lid defining an interior volume, a substrate support disposed in the interior volume and a showerhead assembly disposed between the lid and the substrate support. The showerhead assembly includes a faceplate configured to deliver a process gas to a processing region defined between the showerhead assembly and the substrate support and a underplate positioned above the faceplate, defining a first plenum between the lid and the underplate, the having multiple zones, wherein each zone has a plurality of openings that are configured to pass an amount of inert gas from the first plenum into a second plenum defined between the faceplate and the underplate, in fluid communication with the plurality of openings of each zone such that the inert gas mixes with the process gas before exiting the showerhead assembly.

Abstract: A gallium nitride thin film can be formed on a substrate at a low temperature (e.g., not higher than 600° C.) by applying a laser to resonantly excite molecules of a first precursor that contains nitrogen, in which the laser has a wavelength that is selected to match a vibration mode and/or a vibrational-rotational mode of the molecules of the first precursor. A second precursor is provided in which the excited first precursor and the second precursor react to form a nitride that is deposited on the substrate. For example, the second precursor may include gallium, and the nitride may be gallium nitride. Other nitride films can be produced in a similar manner.

Abstract: A method for producing particulate clusters comprises passing a core through an array of matrix-supported coating particles. Particulate clusters produced by the method may find application as catalytic particles, components of novel electronic and photonic materials and sensors, and as binding sites for protein molecules in biochips.

Abstract: The object of the present invention is to provide a metal plate having an excellent transportability. A maximum value of a steepness degree at a central area in a width direction of the metal plate is not more than 0.4%. In addition, the maximum value of the steepness degree at the central area is not more than a steepness degree at one end side area, and is not more than a steepness degree at the other end side area. Further, a difference between the maximum value of the steepness degree at the one end side area and the maximum value of the steepness degree at the other end side area is not more than 0.4%.

Abstract: Provided are methods for etching films comprising transition metals which help to minimize higher etch rates at the grain boundaries of polycrystalline materials. Certain methods pertain to amorphization of the polycrystalline material, other pertain to plasma treatments, and yet other pertain to the use of small doses of halide transfer agents in the etch process.

Abstract: Provided is a technique capable of removing a damaged layer of a sample piece generated through an FIB fabrication sufficiently but at the minimum. A charged particle beam device includes a first element ion beam optical system unit (110) which performs a first FIB fabrication to form a sample piece from a sample, a second element ion beam optical system unit (120) which performs a second FIB fabrication to remove a damaged layer formed on a surface of the sample piece, and a first element detector (140) which detects an first element existing in the damaged layer. A termination of the second FIB fabrication is determined if an amount of the first element existing in the damaged layer becomes smaller than a predefined threshold value.

Abstract: To convert light into a chemical substance with high conversion efficiency. A device, comprising: a photovoltaic layer having a first face and a second face; an oxidation electrode layer electrically connected to the first face of the photovoltaic layer; a reduction electrode layer electrically connected to the second face of the photovoltaic layer; a first electrolytic solution being supplied to the oxidation electrode layer; a second electrolytic solution being supplied to the reduction electrode layer; and a porous layer, provided to in contact with at least one of the first electrolytic solution and the second electrolytic solution, having fine pores through which a product produced by the oxidation reaction or the reduction reaction passes, and being given a temperature gradient wherein the product being purified by the porous layer.

Abstract: A process for manufacturing a catalytic electrode includes depositing an electrocatalytic ink on a carrier, wherein the electrocatalytic ink includes an electrocatalytic material and a product polymerizable into a protonically conductive polymer. The process also includes solidifying the electrocatalytic ink so as to form an electrode wherein the composition of the product polymerizable into a protonically conductive polymer and its proportion in the ink is defined so that the electrode formed has a breaking strength greater than 1 MPa. The process further includes separating the electrode formed from the carrier.

Abstract: A method for concentrating an aqueous caustic alkali produced by a membrane cell process by using a single or multiple effect evaporator system in which the vapor flows in a counter direction to the aqueous caustic alkali flow and the heat recovered from the catholyte circulation line is used as part of the concentration process. In one embodiment, a catholyte heat recovery heat exchanger and flash evaporation chamber are located after the last effect of a multiple effect evaporator system. In another embodiment, the catholyte heat recovery heat exchanger and flash evaporation chamber are located prior to the single or multiple effect evaporator system. In yet another embodiment, the catholyte heat recovery process is used in conjunction with additional heat exchanger processes to further concentrate the final product as desired.

Abstract: This invention is a method and apparatus for operating electrochemical reactors with multi-phase feeds, in which a liquid feed stream is dispersed in a second fluid to form a spray, mist or emulsion before entering the reaction zone. The invention is applicable to both electro-synthesis and fuel cell reactors, with particular utility in mixed-reactant fuel cells.

Abstract: A contact bar and related techniques allow enhanced electrolytic refining of metals, e.g. avoiding or reducing electrical short circuits. The contact bar is adapted to rest on an insulating capping board for contacting symmetrical electrodes to provide locations for electrical contact therewith. The contact bar includes a central portion laying on the capping board and branch portions extending laterally outward from the central portion, such that the branch portions fit in between seats of the capping board. The contact bar may include a retention member enabling to reduce lateral movement of the electrodes, and may include a plurality of apertures to engage corresponding holding arms of the capping board. There may be a plurality of adjacent similar contact bar segments.

Abstract: The present disclosure generally relates to methods of electro-chemically forming aluminum or aluminum oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of aluminum or aluminum oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited aluminum or aluminum oxide thereon.

Abstract: The invention relates to an electrolytic deposition in the form of a gold alloy with a thickness of between 1 and 800 microns and which includes copper. According to the invention, the deposition includes indium as the third main compound. The invention concerns the field of electroplating methods.

Abstract: The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. In many cases the material is a metal and the substrate is a semiconductor wafer, though the embodiments are no so limited. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold defined on the bottom by the channeled plate, on the top by the substrate, and on the sides by a cross flow confinement ring. Also typically present is an edge flow element configured to direct electrolyte into a corner formed between the substrate and substrate holder. During plating, fluid enters the cross flow manifold both upward through the channels in the channeled plate, and laterally through a cross flow side inlet positioned on one side of the cross flow confinement ring. The flow paths combine in the cross flow manifold and exit at the cross flow exit, which is positioned opposite the cross flow inlet.

Abstract: An electroplating method according to an embodiment is a electroplating method of generating a metal film on a cathode surface by setting a negative potential to a cathode of an anode and the cathode provided in a reaction bath, including mixing and accommodating a plating solution containing at least plated metal ions, an electrolyte, and a surface active agent and a supercritical fluid in the reaction bath and applying a current in a concentration of the supercritical fluid and a cathode current density in which a polarization resistance obtained from a cathode polarization curve while the plated metal ions are reduced is larger than before the supercritical fluid is mixed.