Abstract: A thermoelectric conversion material having excellent thermoelectric performance over a wide temperature range, and a thermoelectric conversion module providing excellent junctions between thermoelectric conversion materials and electrodes. An R-T-M-X-N thermoelectric conversion material has a structure expressed by the following formula: RrTt-mMmXx-nNn (0?r?1, 3?t?m?5, 0?m?0.5, 10?x?15, 0?n?2), where R represents three or more elements selected from the group consisting of rare earth elements, alkali metal elements, alkaline-earth metal elements, group 4 elements, and group 13 elements, T represents at least one element selected from Fe and Co, M represents at least one element selected from the group consisting of Ru, Os, Rh, Ir, Ni, Pd, Pt, Cu, Ag, and Au, X represents at least one element selected from the group consisting of P, As, Sb, and Bi, and N represents at least one element selected from Se and Te.

Abstract: An extrudable aluminum alloy for a micro channel and round tube heat exchanger application including silicon in an amount that ranges between 0.15 and 0.30 wt %, iron in an amount that is less than or equal to 0.15 wt %, manganese in amount that ranges between 0.50 and 0.90 wt %, zinc in amount of no greater than 0.03 wt %, copper in amount of no greater than 0.03 wt %, and nickel in an amount of no greater than 0.01 wt %.

Abstract: There is provided a high-manganese steel with superior coating adhesion and a method of producing a hot-dip galvanized steel sheet from same. According to an aspect of the present disclosure, a high-manganese steel is characterized by including, by weight, C: 0.3-1%, Mn: 8-25%, Al: 1-8%, Si: 0.1-3.0%, Ti: 0.01-0.2%, Sn: 0.06-0.2%, B: 0.0005-0.01%, with the remainder being Fe and inevitable impurities. The present disclosure can provide a high-manganese and hot-dip galvanized steel sheet with superior surface quality as well as with high strength and workability by preventing coating failures that may be caused by manganese.

Abstract: The present invention relates to a mold steel having a composition including, in terms of mass %: 0.220%?C?0.360%; 0.65%?Si<1.05%; 0.43%?Mn?0.92%; 0.43%?Ni?0.92%; 0.67%?0.5Mn+Ni?1.30%; 10.50%?Cr<12.50%; 0.05%?Mo<0.50%; 0.002%?V<0.50%; 0.001%?N?0.160%; and 0.300%?C+N?0.420%, with the remainder being Fe and unavoidable impurities.

Abstract: Systems and methods of hot forming a metal blank include receiving the metal blank at a heater and positioning the blank adjacent a magnetic rotor of the heater. The systems and methods also include heating the metal blank through the magnetic rotor by rotating the magnetic rotor. Rotating the magnetic rotor induces a magnetic field into the metal blank such that the metal blank is heated.

Abstract: An aluminum alloy material for use in thermal conduction to which improved castability has been imparted by silicon addition. It has improved thermal conductivity and improved strength. The material has a composition containing 7.5-12.5 mass % Si and 0.1-2.0 mass % Cu, the remainder being Al and unavoidable impurities, wherein the amount of copper in the state of a solid solution in the matrix phase is regulated to 0.3 mass % or smaller. The composition may further contain at least 0.3 mass % Fe and/or at least 0.1 mass % Mg, provided that the sum of (Fe content) and (content of Mg among the impurities)×2 is 1.0 mass % or smaller and the sum of (Cu content), (content of Mg among the impurities)×2.5, and (content of Zn among the impurities) is 2.0 mass % or smaller.

Abstract: A quasicrystal-containing plated steel sheet including: a plating layer positioned on at least one surface of a steel sheet; and an alloy layer positioned at an interface between the plating layer and the steel sheet and composed of an Al—Fe intermetallic compound. A chemical composition of the plating layer contains at least, in atom %, Zn: 28.5% to 50%, Al: 0.3% to 12%, and the balance: Mg and impurities, and the plating layer includes, in order from the steel sheet side, a first plating layer which is composed of a structure containing an MgZn phase, an Mg phase, and a quasicrystal phase, and a second plating layer which is positioned on the first plating layer and is composed of a structure containing an Mg51Zn20 phase, a Zn phase, and a quasicrystal phase.

Abstract: A method for manufacturing a ferritic stainless steel product includes forming a carburized layer on a workpiece made of ferritic stainless steel, and forming a nitrided layer on a surface of the workpiece by heating the workpiece at a temperature equal to or higher than a transformation point of the ferritic stainless steel in an atmosphere containing an N2 gas.

Abstract: The present invention provides a technique for performing film formation at low cost without causing a short-circuit between sputtered films formed on opposite surfaces of a film-formation target substrate.

Abstract: A heating apparatus including a side wall heat insulator configured to provide an inner space for receiving a reaction tube, an upper wall heat insulator covering a top portion of the side wall heat insulator, a heat generation part in an inner surface of the side wall heat insulator, and a heat compensating part on a lower surface of the upper wall heat insulator, the heat compensating part including a reflection surface in a first region on the lower surface of the upper wall heat insulator, the first region having a first emissivity less than an emissivity of the upper wall heat insulator may be provided.

Abstract: A method of making a fibrous part is provided. The method may comprise forming a porous structure with an annular geometry. A first entrance channel and a second entrance channel may be formed with the entrance channels defined by a surface of the preform. The entrance channels may also extend in a radial direction from an inner diameter of the annular porous structure partially across the surface. An exit channel may be formed between the entrance channels and defined by the surface. The exit channel may extend in a radial direction from an outer diameter of the annular porous structure partially across the surface.

Abstract: The disclosure relates to a process for preparing particulate materials having high electrochemical capacities that are suitable for use as anode active materials in rechargeable metal-ion batteries. In one aspect, the disclosure provides a process for preparing a particulate material comprising a plurality of composite particles. The process includes providing particulate porous carbon frameworks comprising micropores and/or mesopores, wherein the porous carbon frameworks have a D50 particle diameter of at least 50 ?m; depositing an electroactive material selected from silicon and alloys thereof into the micropores and/or mesopores of the porous carbon frameworks using a chemical vapor infiltration process in a fluidized bed reactor, to provide intermediate particles; and comminuting the intermediate particles to provide said composite particles.

Abstract: A substrate processing apparatus includes: a substrate retainer configured to support a substrate; a heat-insulating unit; a transfer chamber; and a gas supply mechanism configured to supply a gas into the transfer chamber, the gas supply mechanism including: a first gas supply mechanism configured to supply the gas into an upper region of the transfer chamber, where the substrate retainer is disposed such that the gas flows horizontally through the upper region; and a second gas supply mechanism configured to supply the gas into a lower region of the transfer chamber, where the heat-insulating unit is provided such that the gas flows downward through the lower region, wherein the first gas supply mechanism and the second gas supply mechanism are disposed along a first sidewall of the transfer chamber, and the second gas supply mechanism is disposed lower than the first gas supply mechanism.

Abstract: An atomic layer deposition-inhibiting material composed of a fluorine-containing resin that has a fluorine content of 30 at % or greater, has at least one tertiary carbon atom and quaternary carbon atom, and lacks ester groups, hydroxyl groups, carboxyl groups, and imide groups.

Abstract: A device for atomic layer deposition includes: an injector installed to an opening of a film deposition chamber; and an injector adhesion preventive member installed by insertion into the opening, wherein the injector includes an injector raw material gas supply path, an injector reactant gas supply path, and an injector inert gas supply path, the respective paths being partitioned from each other, the injector adhesion preventive member includes an adhesion preventive member raw material gas supply path, an adhesion preventive member reactant gas supply path, and an adhesion preventive member inert gas supply path, the respective paths being partitioned from each other, and the adhesion preventive member inert gas supply path is provided such that the inert gas flows in a clearance between an outer peripheral side of the injector adhesion preventive member and an inner peripheral side of the opening.

Abstract: Embodiments of a blocker plate for use in a substrate process chamber are disclosed herein. In some embodiments, a blocker plate for use in a substrate processing chamber configured to process substrates having a given diameter includes: an annular rim; a central plate disposed within the annular rim; and a plurality of spokes coupling the central plate to the annular rim.

Abstract: Processing chambers including lid assemblies which form a volume above an injector assembly to decrease the deflection of the injector assembly as a result of the pressure differential between the processing side of the injector assembly and the atmospheric side of the injector assembly.

Abstract: Embodiments of the invention provide methods for processing a substrate within a processing chamber. In one embodiment, the method comprises providing a precursor gas mixture into the processing chamber, the precursor gas mixture comprising a deposition precursor gas and an etch precursor gas, subjecting the precursor gas mixture to a thermal energy from a heat source to deposit a material layer on a surface of the substrate, wherein the thermal energy is below the minimum required for pyrolysis of the etch precursor gas, and after the material layer is formed on the surface of the substrate, subjecting the precursor gas mixture to a photon energy from a radiation source, the photon energy having a wavelength and a power level selected to promote photolytic dissociation of the etch precursor gas over the deposition precursor gas and etch a portion of the material layer from the surface of the substrate.

Abstract: A method for manufacturing a diamond-like carbon film is described, which includes the following steps. A substrate is disposed into a chamber. An aromatic cyclic hydrocarbon is introduced into the chamber. A diamond-like carbon film is grown on the substrate by using the aromatic cyclic hydrocarbon as a reaction precursor The step of growing the diamond-like carbon film includes controlling a substrate temperature at 200 Celsius degrees to 800 Celsius degrees.

Abstract: An etching method includes: applying a radiation to an etching aqueous solution; and etching a material to be etched by using the etching aqueous solution irradiated with the radiation.

Abstract: Formulations for stabilizing hydrogen peroxide, comprising water soluble Zn+2 ions at 0.7 to 100 parts per million of an alkaline hydrogen peroxide solution. In some examples, the alkaline hydrogen peroxide solution is a silicon wafer cleaning solution comprised of H2O2 and NH4OH—H2O and the water soluble Zn+2 ions are present at 3 to 100 parts per million of the silicon wafer cleaning solution. In some examples, the alkaline hydrogen peroxide solution is a wet etching formulation selective for TiN and the water soluble Zn+2 ions are present at 0.7 to 10 parts per million of the wet etching formulation. In some examples, the alkaline hydrogen peroxide solution is a wet etching formulation selective for Ti and Zn ions are present at 2 to 7 parts per million.

Abstract: Some embodiments of the present disclosure provide a gas sensor in an IOT. The gas sensor includes a substrate, a conductor disposed above the substrate, and a sensing film disposed over the conductor. The conductor has a top-view pattern including a plurality of openings, a minimal dimension of the opening being less than about 4 micrometer; and a perimeter enclosing the opening. Some embodiments of the present disclosure provide a method of manufacturing a gas sensor. The method includes receiving a substrate; forming a conductor, over the substrate; patterning the conductor to form a plurality of openings in the conductor by an etching operation, and forming a gas-sensing film over the conductor. The openings are arranged in a repeating pattern, and a minimal dimension of the opening being about 4 micrometer.

Abstract: Disclosed is a pattern of a film layer including aluminum, and a manufacturing method and an aftertreatment method thereof. In the manufacturing method, a patterned photoresist layer (320) which covers on a to-be-patterned film layer (310) including aluminum is taken as a mask, and a dry etching process is performed on the to-be-patterned film layer (310) by using a gas including Cl2 to form a patterned film layer; and then the formed patterned film layer (310) including aluminum is subjected to dechlorination treatment and uninstalling of a bearing substrate (200) simultaneously. The method can improve the productivity and save the cost.

Abstract: A photovoltaic apparatus comprising: at least one photovoltaic surface electrically connected to a set of photovoltaic electrodes; and a chemical reactor electrically connected to the set of photovoltaic electrodes. The chemical reactor enables N pairwise fluid contacts among k chemical fluids, with k?2 and N?4 and comprises: a reaction layer extending in a plane subtended by two directions; N chemical cells, each including two circuit portions, designed for enabling circulation of two of the k chemical fluids, respectively, the two circuit portions intersecting each other, thereby enabling one pairwise fluid contact for the two of the k chemical fluids; and a fluid distribution circuit comprising: k sets of inlet orifices sequentially alternating along lines parallel to one of the two directions; and k sets of outlet orifices sequentially alternating along lines parallel to the inlet orifices, and wherein, each circuit portion connects an inlet orifice to an outlet orifice.

Abstract: Environmentally friendly nickel electroplating compositions enable the electroplating of nickel deposits which are bright and uniform and inhibit corrosion of gold layers deposited on the bright and uniform nickel deposits. The environmentally friendly nickel electroplating compositions can be used to electroplate bright and uniform nickel deposits on various substrates over a wide current density range.

Abstract: Electroplating methods enable the plating of photoresist defined features which have substantially uniform morphology. The electroplating methods include copper electroplating baths with reaction products of pyrazole compounds and bisepoxides to electroplate the photoresist defined features. Such features include pillars, bond pads and line space features.

Abstract: Anodized electroplated aluminum structures and methods for making the same are disclosed. Cosmetic structures according to embodiments of the invention are provided by electroplating a non-cosmetic structure with aluminum and then anodizing the electroplated aluminum. This produces cosmetic structures that may possess desired structural and cosmetic properties and that may be suitable for use as housing or support members of electronic devices.

Abstract: Layer-by-layer thickness control of an electroplated film can be achieved by using a cyclic deposition process. The cyclic process involves forming a layer (or partial layer) of hydrogen on a surface of the substrate, then displacing the layer of hydrogen with a layer of metal. These steps are repeated a number of times to deposit the metal film to a desired thickness. Each step in the cycle is self-limiting, thereby enabling atomic level thickness control.

Abstract: A method which can perform a soft pre-wetting treatment of a substrate, such as a wafer, with use of a pre-wetting liquid in a smaller amount. This method includes: holding a substrate between a first holding member and a second holding member, with the surface of the substrate being exposed through an opening of the second holding member, and pressing a sealing ridge of the substrate holder against a peripheral portion of the substrate; pressing a sealing block against the substrate holder; forming a vacuum in an external space; performing a seal inspection to check a sealed state provided by the sealing ridge based on a change in pressure in the external space; and performing a pre-wetting treatment by supplying a pre-wetting liquid to the external space while evacuating air from the external space to bring the pre-wetting liquid into contact with the exposed surface of the substrate.

Abstract: In one embodiment, a method for manufacturing an aperture plate includes depositing a releasable seed layer above a substrate, applying a first patterned photolithography mask above the releasable seed layer, the first patterned photolithography mask having a negative pattern to a desired aperture pattern, electroplating a first material above the exposed portions of the releasable seed layer and defined by the first mask, applying a second photolithography mask above the first material, the second photolithography mask having a negative pattern to a first cavity, electroplating a second material above the exposed portions of the first material and defined by the second mask, removing both masks, and etching the releasable seed layer to release the first material and the second material. The first and second material form an aperture plate for use in aerosolizing a liquid. Other aperture plates and methods of producing aperture plates are described according to other embodiments.

Abstract: There is provided a feeder capable of reducing deterioration of the contact state between the feeder and an anode more than the prior art as dissolution of the anode progresses. The feeder can supply power to the anode 5 for use in plating a substrate in a plating tank. The feeder includes a main body portion 1 which can be disposed on an outer periphery of the anode 5 and a spring 88 which is disposed in the main body portion 1 and can apply a first force 100 to the main body portion 1 in a direction from the main body portion 1 toward a region 80 surrounded by the main body portion 1.

Abstract: A plating apparatus enabling a user to conduct maintenance of a substrate holder while an operation of the plating apparatus is being performed is disclosed. The plating apparatus includes: a processing section for plating a substrate; a storage container configured to store the substrate holder for holding the substrate; a transport machine configured to transport the substrate holder between the processing section and the storage container; a maintenance area adjacent to the storage container; and a substrate-holder carrier supported by the storage container. The substrate-holder carrier is movable between the storage container and the maintenance area while supporting the substrate holder.

Abstract: A method of plating a metal layer on a work piece includes exposing a surface of the work piece to a plating solution, and supplying a first voltage at a negative end of a power supply source to an edge portion of the work piece. A second voltage is supplied to an inner portion of the work piece, wherein the inner portion is closer to a center of the work piece than the edge portion. A positive end of the power supply source is connected to a metal plate, wherein the metal plate and the work piece are spaced apart from each other by, and are in contact with, the plating solution.

Abstract: Direct current plating methods inhibit void formation, reduce dimples and eliminate nodules. The method involves electroplating copper at a high current density followed by a pause in electroplating and then turning on the current to electroplate at a lower current density to fill through-holes.

Abstract: Forming a transition zone terminated superconformal filling in a recess includes: providing an electrodeposition composition including: a metal electrolyte including a plurality of metal ions, solvent, and suppressor; providing the article including: a field surface and the recess that includes a distal position and a proximate position; exposing the recess to the electrodeposition composition; potentiodynamically controlling an electric potential of the recess with a potential wave form; bifurcating the recess into an active metal deposition region and a passive region; forming a transition zone; decreasing the electric potential of the recess by the potential wave form; progressively moving the transition zone closer to the field surface and away from the distal position; and reducing the metal ions and depositing the metal in the active metal deposition region and not in the passive region to form the transition zone terminated superconformal filling in the recess of the substrate.

Abstract: The embodiments herein relate to methods and apparatus for determining whether a particular test bath is able to successfully fill a feature on a substrate. In various cases, the substrate is a semiconductor substrate and the feature is a through-silicon-via. Generally, two experiments are used: a first experiment simulates the conditions present in a field region of the substrate during the fill process, and the second experiment simulates the conditions present in a feature on the substrate during the fill process. The output from these experiments may be used with various techniques to predict whether the particular bath will result in an adequately filled feature.

Abstract: A nanocellular single crystal nickel based material is provided having a thermal diffusivity in the range of 0.0002 cm{circumflex over (?)}2/s to 0.02 cm{circumflex over (?)}2/s and a thermal conductivity in the range of 0.024 W/mK to 9.4 W/mK. The nanocellular single crystal nickel based material may be used to form turbine engine components. The nanocellular single crystal nickel based material may be produced by providing a first solution containing a nickel precursor and deionized water, providing a second solution containing a structure controlling polymer/surfactant and an alcohol, mixing the first and second solutions into a solution containing a reducing agent to form a third solution, and processing the third solution to create the nanocellular single crystal based material.

Abstract: In a first step, protrusions (42) are formed on a surface of an SiC substrate (40), and the SiC substrate (40) is etched. In a second step, the protrusions (42) of the SiC substrate (40) are epitaxially grown through MSE process, and an epitaxial layer (43a) containing threading screw dislocation, which has been largely grown in the vertical (c-axis) direction as a result of MSE process, is at least partially removed. In a third step, MSE process is performed again on the SiC substrate (40) after the second step, to cause epitaxial layers (43) containing no threading screw dislocation to be grown in the horizontal (a-axis) direction to be connected at the molecular level, so that one monocrystalline 4H—SiC semiconductor wafer (45) having a large area is generated throughout an Si-face or a C-face of the SiC substrate (40).

Abstract: A substrate mounting member according to the present invention is a member for mounting a SiC substrate for epitaxial growth, which includes a wafer plate including a SiC polycrystal, and a supporting plate configured to be placed on the wafer plate, include no SiC polycrystal and have a surface serving as a SiC substrate placing surface, the surface being on the side opposite to a surface in contact with the wafer plate, and in which a thickness h [mm] of the supporting plate satisfies an expression h4?3 pa4(1?v2){(5+v)/(1+v)}/16E when a force applied to a unit area of the supporting plate by a self-weight of the supporting plate and by the SiC substrate is represented as p [N/mm2], a radius of the supporting plate as a [mm], a Poisson's ratio as v and a Young's modulus as E [MPa].

Abstract: A vapor phase growth apparatus according to an embodiment includes a reaction chamber, a ring-shaped holder provided in the reaction chamber, the ring-shaped holder configured to hold a substrate, the ring-shaped holder including an outer portion, and an inner portion on which a ring-shaped protrusion is provided and surrounded by the outer portion, the ring-shaped protrusion being separated from the outer portion, an upper surface of the outer portion being higher than an upper surface of the ring-shaped protrusion, and a heater provided below the ring-shaped holder.

Abstract: A single crystal membrane of BaxSr(1-x)TiO3 (BST) has been fabricated for the first time using molecular beam epitaxy. The membrane typically has a thickness of 200 nm to 500 nm and the thickness may be controlled to within 1%. It may be fabricated on a sapphire wafer carrier from which it may subsequently be detached. The smoothness of the membrane has an RMS of less than 1 nm. This membrane is very promising for the next generation of RF filters.

Abstract: A method for producing a semiconductor layer (3), including the following method steps: A creating a release layer (2) on a carrier substrate (1); B applying a semiconductor layer (3) to the release layer (2); C detaching the semiconductor layer (3) from the carrier substrate. The invention is characterized in that, in method step A, the release layer (2) is created so as to fully cover at least a processing side of the carrier substrate, in that, in method step B, the semiconductor layer (3) is applied so as to fully cover the release layer (2) at least on the processing side and partially overlap one or more peripheral sides (5a, 5b) of the carrier substrate and in that, between method steps B and C, in a method step C0, regions of the semiconductor layer (3) that overlap a peripheral side are removed. The invention also relates to a semiconductor wafer, to a device for edge correction, to a detaching unit and to a device for producing a semiconductor layer.

Abstract: A jacquard machine includes a plurality of yarn moving elements and in association with each yarn moving element a yarn moving mechanism having an output cord connected to the yarn moving element, a plurality of setting bars extending substantially in a first direction corresponding to a weft direction and positioned adjacent to each other substantially in a second direction longitudinal end regions and a cooperation region arranged between the longitudinal end regions for the cooperation with a plurality of yarn moving mechanisms, a plurality of position adjustment bars extending substantially in the second direction, wherein in each one of the two longitudinal end regions of the setting bars two position adjustment bars are provided adjacent to each other, and a plurality of connecting members for connecting the setting bars to the position adjustment bars, wherein in each longitudinal end region of each setting bar one connecting members is provided such as to be connectable to either one of the two positi

Abstract: A system with binary coding in a textile structure can include a textile sensor that senses a property and that has a yarn pattern. A binary code can be associated with the yarn pattern. When the textile sensor senses the property, the property alters relative positions of yarns in the yarn pattern, causing the associated binary code to change. A particular change in the binary code represents a defined value of the property. As a result, a second textile sensor having a second yarn pattern can be designed based on the unique binary codes of the first textile sensor measurements, such that the second textile sensor provides predictable responses to different property values.

Abstract: A device for producing a three dimensional shaped consolidated product. The device includes a rotary drum, defined as a rotary conveyor with a peripheral surface extending in circumferential direction with at least one product shaping area in the form of a cavity on said peripheral surface, the peripheral surface is pervious to air at least in the product shaping area, at least one material feed device to feed a base material into the at least one cavity, a vacuum device designed to generate a negative pressure at least in the at least one cavity, whereby the generated suction is directed towards the interior of the rotary conveyor, and whereby downstream of the material feed device at least one consolidating device is located such that at least a part of the filled cavity is subjected to a consolidating treatment whereby the base material at least partly will adhere to neighboring material.

Abstract: A novel nonwoven material for use as a cover of bedding and furniture is disclosed. The inventive method comprises creating a layered nonwoven material, cutting one or more desired shapes from a portion of said layered nonwoven material; securely attaching a first portion of said one or more desired shapes to a second portion of said one or more desired shapes to create a cover containing an internal cavity; and placing a furniture item within said internal cavity of said cover. The furniture item is selected from a group comprising a pillow, a cushion, a mattress, and a duvet.

Abstract: Provided herein is a new fire barrier material composed of flame retardant (FR) cellulosic fiber(s) and one or more of an antimicrobial (AM) cellulosic fiber and an untreated cellulosic fiber(s). The fire barrier material may be a fabric woven or knitted from the yarn containing the FR cellulosic fiber(s) and the one or more of AM cellulosic fibers and untreated cellulosic fibers. When AM cellulosic fibers are combined with FR treated cellulosic fibers, the fire barrier material has the dual features of flame retardancy and antimicrobial properties. The fire barrier material may also be a nonwoven, and in preferred embodiments optionally includes a binder fiber. The FR cellulosic fiber contains FR chemical(s) or FR compound(s) that have a melting point or decomposition temperature at 400° C. (752° F.) or below.

Abstract: A carrier body has a core suitable for receiving a needle tip through one end. A pair of flanges extends outwardly from the core, defining an interflange gap for having thread from the needle wound in the gap. The flange nearer the entry end of the core defines a radial slot receiving thread from the needle eye and passing it into the interflange gap. When the thread is wound on the core, the radial slot prevents having thread from also winding around the needle. The carrier body is configured to enter an open-topped container body in a predetermined position displaying the radial slot and thread at a preselected location for ready viewing of the thread.

Abstract: Systems and methods for pre-tensioning backing materials of a tufted product. The systems can include at least first and second tensioning assemblies and a guide assembly. Each tensioning assembly can have a backing supply subassembly for supporting a backing material and a roller subassembly for effecting movement of the backing material at a desired tension. The roller subassembly can include a driven roller for pulling the backing material from the backing supply subassembly, and a compensator for receiving the backing material from the driven roller. The guide assembly can simultaneously receive the tensioned backing materials from the tensioning assemblies and position the backing materials in contact with each other for delivery to a tufting machine at the desired tension.

Abstract: In one aspect, an article may include a base layer and a first strand comprising a thermoplastic polymer material. The first strand may be embroidered with the base layer. The thermoplastic polymer material of the first strand may at least partially adhere to the base layer. In another aspect, the article may include a first embroidered area and a second embroidered area. The first embroidered area may have a first degree of a mechanical property, and the second embroidered area may have a second degree of the mechanical property. The first degree of the mechanical property may be different than the second degree of the mechanical property.