Abstract: The present disclosure relates to nanoscale device comprising an elongated crystalline nanostructure, such as a nanowire crystal, a nanowhisker crystal or a nanorod crystal, and a method for producing thereof. One embodiment relates to a nanoscale device comprising an elongated crystalline semiconductor nanostructure, such as a nanowire (crystal) or nanowhisker (crystal) or nanorod (crystal), having a plurality of substantially plane side facets, a crystalline structured first facet layer of a superconductor material covering at least a part of one or more of said side facets, and a second facet layer of a superconductor material covering at least a part of the first facet layer, the superconductor material of the second facet layer being different from the superconductor material of the first facet layer, wherein the crystalline structure of the semiconductor nanostructure is epitaxially matched with the crystalline structure of the first facet layer on the interface between the two crystalline structures.

Abstract: A quantum processor includes: a first chip comprising a qubit array, in which a plurality of qubits within the qubit array define an enclosed region on the first chip, in which each qubit of the plurality of qubits that define the enclosed region is arranged to directly electromagnetically couple to an adjacent qubit of the plurality of qubits that define the enclosed region, and in which each qubit of the qubit array comprises at least two superconductor islands, and a second chip bonded to the first chip, the second chip including one or more qubit control elements, in which the qubit control elements are positioned directly over the enclosed region of the first chip.

Abstract: Compact and power efficient acoustically actuated magnetoelectric antennas for transmitting and receiving very low frequency (VLF) electromagnetic waves utilize magnetoelectric coupling in a magnetic/piezoelectric heterostructure to provide voltage control of magnetization in transmission mode and magnetic control of electric polarization in receiving mode. The magnetoelectric antennas provide a power efficiency enhanced by orders of magnitude compared to magnetically or mechanically switching the magnetization. The antennas can be used in groups or arrays and can be combined to form VLF communication systems.

Abstract: The present disclosure relates to piezoelectric compositions of Formula I comprising Lead Zirconate—Lead Titanate solid solution. The disclosure further relates to a method of obtaining said composition, method of preparing/fabricating piezoelectric component(s) and piezoelectric component(s)/article(s) obtained thereof. The piezoelectric composition and articles of the present disclosure show excellent electromechanical characteristics along with very large insulation resistance (IR).

Abstract: It is formed, over a supporting body made of a ceramic, a bonding layer composed of one or more material selected from the group consisting of mullite, alumina, tantalum pentoxide, titanium oxide and niobium pentoxide. Neutralized beam is irradiated onto a surface of the bonding layer to activate the surface of the bonding layer. The surface of the bonding layer and the piezoelectric single crystal substrate are bonded by direct bonding.

Abstract: Techniques for preventing switching of spins in a magnetic tunnel junction by stray magnetic fields using a thin film magnetic shield are provided. In one aspect, a method of forming a magnetic tunnel junction includes: forming a stack on a substrate, having a first magnetic layer, a tunnel barrier, and a second magnetic layer; etching the stack to partially pattern the magnetic tunnel junction in the stack, wherein the etching includes patterning the magnetic tunnel junction through the second magnetic layer, the tunnel barrier, and partway through the first magnetic layer; depositing a first spacer and a magnetic shield film onto the partially patterned magnetic tunnel junction; etching back the magnetic shield film and first spacer; complete etching of the magnetic tunnel junction through the first magnetic layer to form a fully patterned magnetic tunnel junction; and depositing a second spacer onto the fully patterned magnetic tunnel junction.

Abstract: The present disclosure provides a semiconductor structure, including an Nth metal layer, a bottom electrode over the Nth metal layer, a magnetic tunneling junction (MTJ) over the bottom electrode, a top electrode over the MTJ, and an (N+M)th metal layer over the Nth metal layer. N and M are positive integers. The (N+M)th metal layer surrounds a portion of a sidewall of the top electrode. A manufacturing method of forming the semiconductor structure is also provided.

Abstract: A magnetic tunnel junction comprises a conductive first magnetic electrode comprising magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material, and a non-magnetic tunnel insulator material between the first and second electrodes. The magnetic reference material of the second electrode comprises a synthetic antiferromagnetic construction comprising two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other. The one magnetic region comprises a polarizer region comprising CoxFeyBz where “x” is from 0 to 90, “y” is from 10 to 90, and “z” is from 10 to 50. The CoxFeyBz is directly against the tunnel insulator. A non-magnetic region comprising an Os-containing material is between the two spaced magnetic regions. The other magnetic region comprises a magnetic Co-containing material. Other embodiments are disclosed.

Abstract: Magnetic sensors using spin Hall effect and methods for fabricating same are provided. One such magnetic sensor includes a spin Hall layer including an electrically conductive, non-magnetic material, a magnetic free layer adjacent to the spin Hall layer, a pair of push terminals configured to enable an electrical current to pass through the magnetic free layer and the spin Hall layer in a direction that is perpendicular to a plane of the free and spin Hall layers, and a pair of sensing terminals configured to sense a voltage when the electrical current passes through the magnetic free layer and the spin Hall layer, where each of the push and sensing terminals is electrically isolated from the other terminals.

Abstract: The present disclosure provides a semiconductor structure, including an Nth metal layer over a transistor region, where N is a natural number, and a bottom electrode over the Nth metal layer. The bottom electrode comprises a bottom portion having a first width, disposed in a bottom electrode via (BEVA), the first width being measured at a top surface of the BEVA, and an upper portion having a second width, disposed over the bottom portion. The semiconductor structure also includes a magnetic tunneling junction (MTJ) layer having a third width, disposed over the upper portion, a top electrode over the MTJ layer and an (N+1)th metal layer over the top electrode. The first width is greater than the third width.

Abstract: A memory device includes a memory stack formed on a substrate to program skyrmions within at least one layer of the stack. The skyrmions represent logic states of the memory device. The memory stack further includes a top and bottom electrode to receive electrical current from an external source and to provide the electrical current to the memory stack. A free layer stores a logic state of the skyrmions in response to the electrical current. A Dzyaloshinskii-Moriya (DM) Interaction (DMI) layer in contact with the free layer induces skyrmions in the free layer. A tunnel barrier is interactive with the DMI layer to facilitate detection of the logic state of the skyrmions in response to a read current. At least one fixed magnetic (FM) layer is positioned within the memory stack to facilitate programming of the skyrmions within the free layer in response to the electrical current.

Abstract: A method for manufacturing a magnetic random access memory array at a density greater than would be possible using photolithography. A template is formed having a pattern that is configured to define a memory array. A block copolymer material is deposited onto the template and annealed to form narrow cylinders of ordered block copolymer material. A metal oxide is then diffused into the cylinders to form narrow metal oxide cylinders. The metal oxide cylinders can then be used as mask structures to pattern a hard mask layer. An ion milling process can then be performed to transfer the image of the patterned hard mask onto an underlying magnetic memory material to form an array having features sizes smaller than what would be possible using photolithography.

Abstract: Memory devices and methods for fabricating memory devices have been disclosed. One such method includes forming the memory stack out of a plurality of elements. An adhesion species is formed on at least one sidewall of the memory stack wherein the adhesion species has a gradient structure that results in the adhesion species intermixing with an element of the memory stack to terminate unsatisfied atomic bonds of the element. The gradient structure further comprises a film of the adhesion species on an outer surface of the at least one sidewall. A dielectric material is implanted into the film of the adhesion species to form a sidewall liner.

Abstract: A phase change memory cell is provided that includes a phase change material-containing structure sandwiched between first and second electrodes. The phase change material-containing structure has a resistance that changes gradually, and thus may be used in analog or neuromorphic computing. The phase change material-containing structure may contain a plurality of phase change material pillars, wherein each phase change material pillar has a different phase change material composition. Alternatively, the phase change material-containing structure may contain a doped phase change material layer in which a dopant concentration decreases laterally inward from an outermost surface thereof.

Abstract: A semiconductor device includes: a first switch that uses a first selection signal and a second selection signal to select one of a first voltage and a third voltage or a second voltage and a fourth voltage from the first voltage, the second voltage lower than the first voltage, the third voltage lower than the first voltage, and the fourth voltage lower than the third voltage; a second switch that selects one of a first input signal or a second input signal from the first input signal being the first voltage or the third voltage and the second input signal being the second voltage or the fourth voltage; a third switch that outputs the third voltage in a case where the first voltage and the third voltage are selected by the first switch and the first input signal, which is the first voltage, is selected by the second switch, outputs the first voltage in a case where the first voltage and the third voltage are selected by the first switch and the first input signal, which is the third voltage, is selected by t

Abstract: Variable resistance memory devices are provided. A variable resistance memory device includes conductive lines and a memory cell including a variable resistance element on one of the conductive lines. The variable resistance memory device includes a first insulating region between the conductive lines. Moreover, the variable resistance memory device includes a second insulating region on the first insulating region between the conductive lines. Methods of forming variable resistance memory devices are also provided.

Abstract: Provided are a self-gating resistive storage device and a method for fabrication thereof; said self-gating resistive storage device comprises: lower electrodes; insulating dielectric layers arranged perpendicular to, and intersecting with, the lower electrodes to form a stacked structure, said stacked structure being provided with a vertical trench; a gating layer grown on the lower electrodes by means of self-alignment technique, the interlayer leakage channel running through the gating layer being isolated via the insulating dielectric layers; a resistance transition layer arranged in the vertical trench and connected to the insulating dielectric layers and the gating layer; and an upper electrode arranged in the resistance transition layer.

Abstract: A self-selecting memory cell may be composed of a memory material that changes threshold voltages based on the polarity of the voltage applied across it. Such a memory cell may be formed at the intersection of a conductive pillar and electrode plane in a memory array. A dielectric material may be formed between the memory material of the memory cell and the corresponding electrode plane. The dielectric material may form a barrier that prevents harmful interactions between the memory material and the material that makes up the electrode plane. In some cases, the dielectric material may also be positioned between the memory material and the conductive pillar to form a second dielectric barrier. The second dielectric barrier may increase the symmetry of the memory array or prevent harmful interactions between the memory material and an electrode cylinder or between the memory material and the conductive pillar.

Abstract: A device including a reduced top RRAM electrode structure, and method of production thereof. Embodiments include a bottom resistive random-access memory (RRAM) electrode structure over a plurality of lower metal level contacts formed laterally separated in a substrate; a resistive switching structure over the bottom RRAM electrode structure; a top RRAM electrode structure over the resistive switching structure; a protective structure over the top RRAM electrode structure; an encapsulation structure over the bottom RRAM electrode structure and on sidewalls of the resistive switching structure, the top RRAM electrode structure and the protective structure; and an Nblock layer over the substrate.

Abstract: The present disclosure is directed to resistive random access memory (RRAM) structures with a bottom electrode barrier stack. For example, the RRAM structure includes: (i) a bottom electrode having a conductive material and a layer stack, where the layer stack covers a bottom surface and a side surface of the conductive material and is interposed between the conductive material and an underlying conductive structure; (ii) a resistance-switching layer that is disposed on the bottom electrode and opposite to the conductive structure; and (iii) a top electrode that is disposed on the resistance-switching layer.

Abstract: There is disclosed a resistance change memory device according to an aspect of the present disclosure. The resistance change memory device includes a first electrode layer and a second electrode layer that are disposed to be spaced apart from each other, and a resistance change material layer disposed between the first and second electrode layers and including an amorphous carbon structure. The resistance change material layer includes an impurity element adhering to the amorphous carbon structure, and the impurity element has a concentration gradient along a thickness direction of the resistance change material layer.

Abstract: An organic solar cell includes a substrate; a first electrode; a second electrode disposed opposite the first electrode; a photoactive layer that is disposed between the first electrode and the second electrode, and that comprises n-type organic semiconductor material and p-type organic semiconductor material; and an intermediate layer that is disposed on at least one surface of the photoactive layer and that contains a compound represented by Formula 1 below: where R1, R2, R3, R4, R5, and R6 are each independently selected from the group consisting of hydrogen atoms, a carbonyl group, a hydroxyl group, a nitro group, an amino group, a sulfonyl group, a phosphoryl group, straight-chain or branched C1-C7 alkyl groups, and straight-chain or branched C8-C20 alkyl groups, wherein R1, R2, R3, R4, R5, and R6 are not all the same. The organic solar cells have enhanced photostability due to introduction of the intermediate layer.

Abstract: Provided are: a charge-transporting varnish that contains a charge-transporting substance comprising an oligoaniline derivative represented by formula (1), a charge transporting substance that does not contain fluorine atoms, and an organic solvent; and an organic electroluminescent element including a thin film obtained from the varnish. (In the formula: R1 represents a hydrogen atom or an alkyl group that may be substituted; R2 to R10 each independently represent a hydrogen atom, a halogen atom, a nitro group, a cyano group, or an alkyl group, alkenyl group, alkynyl group, aryl group or heteroaryl group that may be substituted; A represents a prescribed fluorine atom-containing substituent; and k represents an integer from 1 to 20.

Abstract: A compound is represented by Formula 1 and an organic light-emitting device including the same: wherein Formula 1 is the same as described above.

Abstract: An organic electroluminescent element comprising a substrate; a pair of electrodes including an anode and a cathode, disposed on the substrate; and at least one organic layer including a light emitting layer, disposed between the electrodes, wherein the light emitting layer includes a compound represented by the following general formula: wherein: R1, R3, and R19; R11 to R18; and A1 to A4 are as defined in the specification.

Abstract: The present invention includes iridium complexes containing novel hexadentate ligands. The multidentate iridium complexes show desired properties in term of EQE, LT, CIE, etc.

Abstract: A substrate and a method of manufacturing the same, a display panel, and a display device are provided, the substrate includes: a base substrate; a defining layer on the base substrate, the defining layer enclosing at least one printing region, the defining layer including: a first sub-defining layer on the base substrate; and a second sub-defining layer on a side of the first sub-defining layer away from the base substrate; and at least one pillar on the side of the first sub-defining layer away from the base substrate and in the at least one printing region, the at least one pillar is configured to break surface tension of ink formed in the at least one printing region.

Abstract: The present disclosure relates to a flexible display device, including at least two non-bending regions and at least one bendable region configured between the two adjacent non-bending regions. A stress buffering layer is configured on the bendable region. The stress buffering layer is configured to buffer a stress generated from the flexible display device when the flexible display device is in a bending state to maintain the flexible display device to be in a stable state, so as to simplified the structure of the flexible display device. The present disclosure further relates to a manufacturing method of the flexible display device.

Abstract: A method of manufacturing a display device including forming a display unit in a central area of a flexible substrate; forming a pattern portion comprising a metallic material in a peripheral area of the flexible substrate; forming an insulating layer covering the pattern portion; forming an encapsulation layer including at least one inorganic layer and at least one organic layer over the display unit; and irradiating a laser beam at a portion of the insulating layer corresponding to the pattern portion to form a recess in the insulating layer and melt at least a part of the pattern portion.

Abstract: A light-emitting device includes an anode; a cathode; and an emissive layer disposed between the anode and the cathode, the emissive layer including quantum dots dispersed in a crosslinked matrix formed from one or more crosslinkable charge transport materials. A method of forming the emissive layer of a light-emitting device includes depositing a mixture including quantum dots and one or more crosslinkable charge transport materials on a layer; and subjecting at least a portion of the mixture to UV activation to form an emissive layer including quantum dots dispersed in a crosslinked matrix.

Abstract: The present disclosure relates to the field of display technology and provides an organic light emitting diode, an OLED display substrate and a display device. It can solve the problem of low continuity in inkjet printing and complicated computer programs between different materials of light emitting layers in the existing organic light emitting diodes. The organic light emitting diode includes a cathode, an anode, and a functional layer between the cathode and the anode; wherein the functional layer includes a first light emitting layer and a second light emitting layer disposed in sequence in a direction away from the anode; the first light emitting layer comprises a first material emitting blue light; and the first light emitting layer and the second light emitting layer form an aggregate in excited state for emitting light of a color different from blue after the cathode and the anode are connected.

Abstract: A display device including a light emitting element including a first electrode, a light emitting layer and a plurality of organic layers including a hole transport layer above the first electrode, and a second electrode above the plurality of organic layers, and an insulation layer having an opening part exposing a part of the first electrode and covering a periphery side part of the first electrode, wherein when a hole mobility of the light emitting layer is ?h1 and a hole mobility of the hole transport layer is ?h2 then ? h ? ? 2 ? h ? ? 1 ? 10 3 and when a periphery length of the part of the first electrode exposed by the opening part is L and an area of the first electrode exposed by the opening part is S0 then L S 0 ? 0.

Abstract: A light emitting device includes a substrate and a light emitting unit over the substrate. The light emitting unit includes a first electrode, an organic emissive layer over the first electrode, a first electron transportation layer over the organic emissive layer, and a metal-containing layer over the first transportation layer. An end of the first electron transportation layer meets the organic emissive layer and the metal-containing layer at a first meeting point, the organic emissive layer has an end which is close to the first meeting point meets the metal-containing layer at a second meeting point, the second meeting point is spaced apart from the first meeting point and away from the first electron transportation layer. Further, at least one of the first electron transportation layer and the metal-containing layer includes transitional metal or alkali metal.

Abstract: An organic EL element includes a pixel electrode, a light emitting function layer that is formed on the pixel electrode, an electron injection layer formed on the light emitting function layer, and a counter electrode that is formed on the electron injection layer and that has semi-transmissive reflectivity, in which the counter electrode contains a reductive material that reduces material of the electron injection layer and Ag with atomic ratio of 75% or more, and an adsorption layer is formed on the counter electrode.

Abstract: The organic light emitting display panel includes a first electrode formed on a substrate, an organic light emitting layer formed on the first electrode, a second electrode formed on the organic light emitting layer, a front sealing layer formed on the second electrode, wherein the front sealing layer is formed by alternately laminating an inorganic barrier layer and an organic barrier layer at least once, and at least one capping layer formed between the lowest layer closest to the second electrode among a plurality of thin films of the front sealing layer and the second electrode and having a higher index of refraction than an index of refraction of the lowest layer.

Abstract: An electroluminescent display device includes: a substrate including a subpixel; a thin film transistor disposed at the subpixel; an overcoat layer disposed on the thin film transistor; a first electrode disposed on the overcoat layer and electrically connected to the thin film transistor; a bank layer disposed on the overcoat layer and the first electrode, the bank layer including a plurality of openings configured to expose the first electrode and a plurality of opening patterns formed in a bar shape to expose the first electrode and connect the plurality of openings; an emitting layer disposed on the first electrode and the bank layer; and a second electrode disposed on the emitting layer.

Abstract: A method includes: forming first and second pixel electrodes on a substrate; exposing upper surfaces of the first and second pixel electrodes; forming a pixel defining layer covering edges of the first and second pixel electrodes; sequentially forming a first lift-off layer, a first shape memory alloy layer, and a first photoresist; forming a first opening exposing an upper surface of the first pixel electrode by patterning the first lift-off layer, the first shape memory alloy layer, and the first photoresist; forming, on the first pixel electrode and the first photoresist, a first organic functional layer including a first emission layer; deforming an end portion of the first shape memory alloy layer, in the first opening, in a direction away from a horizontal surface of the substrate; forming a first protection layer over the first organic functional layer; and removing a remainder of the first lift-off layer.

Abstract: An organic light-emitting display device including a partition wall is provided. The organic light-emitting display device includes a first bank insulating layer covering an edge of a lower electro and a second bank insulating layer supporting the partition wall. The second bank insulating layer is completely spaced apart from the first bank insulating layer. The first bank insulating layer facing the second bank insulating layer is completely covered by an upper electrode which is disposed on a portion of the lower electrode exposed by the first bank insulating layer.

Abstract: Provided are an encapsulation film, an organic electronic device (OED) comprising the same, and a method of manufacturing the organic electronic device. When the organic electronic device is encapsulated using the encapsulation film, an excellent moisture barrier property may be realized, and as reflection or scattering of light is prevented by absorbing and blocking internal or external light, external defects of the organic electronic device may be prevented.

Abstract: A display device is disclosed, which includes: a substrate having a first edge, wherein the first edge is parallel to a first direction, and the substrate has a display region and a border region adjacent to the display region; a first insulating layer disposed on the substrate; a first electrode layer disposed on the first insulating layer; and a second insulting layer disposed on the first electrode layer, wherein the second insulating layer comprises plural protrusions, the protrusions are disposed in the border region, and the protrusions are arranged along the first direction.

Abstract: A display unit includes a flexible substrate, a display device layer, a polarizer, a first moisture barrier film, and a second moisture barrier film. The display device layer is provided on the flexible substrate. The polarizer is provided over the flexible substrate with the display device layer being interposed between the flexible substrate and the polarizer and has a first surface opposed to the flexible substrate, a second surface facing the first surface, and an end surface connecting the first surface and the second surface. The first moisture barrier film covers the first surface of the polarizer. The second moisture barrier film covers the second surface and the end surface of the polarizer, and is in contact with the first moisture barrier film.

Abstract: A thin film encapsulation structure included in an organic EL display apparatus includes a first inorganic barrier layer, an organic barrier layer in contact with the inorganic barrier layer, and a second inorganic barrier layer in contact with the organic barrier layer. The thin film encapsulation structure is formed on an active region and the active region side portion of a plurality of lead wires extending from the active region to a terminal. Each of the lead wires at least partially includes, at at least the lowermost portions of two side surfaces thereof in contact with the first inorganic barrier layer, a forward tapering side surface portion having a tapering angle smaller than 90 degrees in a cross-section parallel to a line width direction thereof. The thin film encapsulation structure includes an inorganic barrier layer joint portion in which the organic barrier layer is not present, and the first inorganic barrier layer and the second inorganic barrier layer are in direct contact with each other.

Abstract: A display apparatus including a substrate; a display area arranged on the substrate and including a plurality of pixels, and a peripheral area arranged outside the display area; a dam surrounding the display area; a crack detector arranged between the dam and an end of the substrate and electrically connected to at least one of the plurality of pixels; a crack prevention dam arranged between the dam and the end of the substrate; and an encapsulation layer including a first inorganic layer, an organic layer, and a second inorganic layer, each covering the display area and a portion of the peripheral area. The first inorganic layer and the second inorganic layer in the encapsulation layer extend to the end of the substrate.

Abstract: A device with light emitting elements can prevent interfacial peeling of a plurality of layers. The device with light emitting elements includes: a substrate including an emission area in which the light emitting elements are arranged and a non-emission area that surrounds the emission area; a first organic film that covers the emission area and has a first modulus of elasticity; a second organic film that is disposed on the first organic film and has a second modulus of elasticity which is greater than the first modulus of elasticity; and a metal film that is disposed on the second organic film and has a third modulus of elasticity which is greater than the second modulus of elasticity.

Abstract: A display device includes: a substrate including a pixel region and a peripheral region; a plurality of pixels provided in the pixel region, the plurality of pixels including first, second, and third sub-pixels each including a light emitting region; a light emitting element disposed in the light emitting region of each of the first, second, and third sub-pixels; a pixel circuit disposed in each of the first, second, and third sub-pixels, the pixel circuit configured to drive the light emitting element, wherein each pixel includes a first region in which the pixel circuit is disposed and a second region except the first region, wherein the light emitting element disposed in the first sub-pixel overlaps with the pixel circuit, and the light emitting element disposed in the second sub-pixel is disposed in the second region.

Abstract: An organic light emitting diode (OLED) display may include: an OLED configured to emit light of wavelength ?; an encapsulation layer encapsulating the OLED, the encapsulation layer including: a first inorganic layer disposed on the OLED, the first inorganic layer including: one or more first layers having a first refractive index (n1) and a first thickness substantially equal to ?/(4*n1); and one or more second layers having a second refractive index (n2) and a second thickness substantially equal to ?/(4*n2), wherein the second refractive index is smaller than the first refractive index, and wherein the one or more first layers and the one or more second layers are alternatingly stacked on one another.

Abstract: A lighting device includes a substrate including a display area and a non-display area and an organic light emitting layer disposed in the display area. A first electrode is disposed on the organic light emitting layer and a second electrode is disposed below the organic light emitting layer. A phase change material layer is disposed below the second electrode and a plurality of third electrodes is disposed between the substrate and the phase change material layer. Therefore, a pattern having various colors of light and various shapes may be implemented based on a shape of the plurality of third electrodes, a phase change of the phase change material layer, and a color of light emitted from the organic light emitting layer.

Abstract: A display substrate including: a base substrate; a thin film transistor provided on a side of the base substrate; a planarization layer provided on a side of the thin film transistor away from the base substrate; a pixel defining layer provided on a side of the planarization layer away from the base substrate, defining a plurality of pixel regions arranged in a matrix, an orthographic projection of the pixel defining layer on the base substrate covering an orthographic projection of the thin film transistor on the base substrate; an organic light emitting diode provided in the pixel region, a recess being provided at a side of the planarization layer away from the base substrate, located at a boundary between the pixel defining layer and the pixel region and located between the thin film transistor and the organic light emitting diode, and a light blocking structure being provided in the recess.

Abstract: A method of fabricating a graphene material, an organic light-emitting diode (OLED) illuminating device, and a display device are provided. The method of fabricating the graphene material has steps of synthesizing and reducing a target object. The fabricated graphene material has advantages of good quality and no impurities. The OLED illuminating device has a substrate, an anode layer, a cathode layer, an organic coating layer, and a graphene material and/or a graphene material layer. The graphene material is doped in at least one of the anode layer, the cathode layer, and the organic coating layer, and/or disposed between an anode and the substrate and/or between the organic coating layer and the cathode layer to form the graphene material layer, which has excellent thermal conductivity, and heat within the OLED illuminating device can be effectively and quickly conducted. The display device has the OLED illuminating device, which increase service life.

Abstract: A non-electrical battery can include a backing plate; a plurality of strings disposed in parallel relation on the backing plate, each string comprising a first end and a second end, wherein the first end of each string is attached to the backing plate and each string extends away from the backing plate; and a charging mechanism attached to the second end of each string to apply a force to the strings to increase a potential energy stored by the strings.