Abstract: The present invention discloses a prediction control method and system for component contents in a rare earth extraction process. The prediction control method includes: establishing an Elman neural network model of a rare earth extraction process; obtaining a predicted output value of the rare earth extraction process through the Elman neural network model of the rare earth extraction process; calculating an optimal set value through steady-state optimization; dynamically predicting an extractant flow increment and a detergent flow increment based on the predicted output value and the optimal set value; and controlling component contents in the rare earth extraction process according to the extractant flow increment and the detergent flow increment.

Abstract: The present disclosure relates to new titanium alloys and methods for making the same. The new titanium alloys generally include 4.75-6.75 wt. % Al, 6.5-8.5 wt. % (Nb+Ta), 1.5-3.5 wt. % Sn, up to 5.0 wt. % Zr, and up to 2.5 wt. % Mo, the balance being titanium, optional incidental elements, and impurities. Due to their composition and methods of manufacture, the new titanium alloys may find use in several applications, such as aerospace and/or automotive applications.

Abstract: The present invention provides a radiation resistant high-entropy alloy and a preparation method thereof. A general formula of the radiation resistant high-entropy alloy is TiZrHfVMoTaxNby, where 0.05?x?0.25, 0.05?y?0.5, and x and y are molar ratios. The preparation method of the radiation resistant high-entropy alloy comprises the following steps: mixing Ti, Zr, Hf, V, Mo, Ta, and Nb in order, and conducting vacuum levitation induction melting or vacuum arc melting, to obtain the radiation resistant high-entropy alloy. The high-entropy alloy in the present invention has an excellent irradiation resistance, and does not suffer radiation hardening damage under simulated helium ion irradiation. When helium bubbles are of same sizes as those of conventional alloy, the bubble density of the high-entropy alloy is far lower than that of the conventional alloy, and the lattice constant thereof decreases abnormally after irradiation.

Abstract: The present invention relates to a bronze-polytetrafluoroethylene compound based on an oxidation-resistant bronze powder, and to a method for producing the bronze-polytetrafluoroethylene compound. In another aspect, the present invention relates to an oxidation-resistant bronze powder for use in polytetrafluoroethylene compounds.

Abstract: An austenitic stainless steel weld metal which has a chemical composition consisting of, by mass %, C: 0.05 to 0.11%, Si: 0.10 to 0.50%, Mn: 1.0 to 2.5%, P: 0.035% or less, S: 0.0030% or less, Co: 0.01 to 1.00%, Ni: 9.0 to 11.5%, Cr: 17.0 to 21.0%, Nb: 0.60 to 0.90%, Ta: 0.001 to 0.100%, N: 0.01 to 0.15%, Al: 0.030% or less, O: 0.020% or less, V: 0 to 0.10%, Ti: 0 to 0.10%, W: 0 to 0.50%, Mo: 0 to 0.50%, Cu: 0 to 0.50%, B: 0 to 0.005%, Ca: 0 to 0.010%, Mg: 0 to 0.010% and REM: 0 to 0.10%, with the balance being Fe and impurities, and satisfying [Nb-7.8×C?0.25].

Abstract: A sulfurous, metallic glass forming alloy and a method for the production thereof are described.

Abstract: Disclosed herein is a composite comprising a metal alloy matrix; where the metal alloy matrix comprises aluminum in an amount greater than 50 atomic percent; a first metal and a second metal; where the first metal is different from the second metal; and where the metal alloy matrix comprises a low temperature melting phase and a high temperature melting phase; where the low temperature melting phase melts at a temperature that is lower than the high temperature melting phase; and a contracting constituent; where the contracting constituent exerts a compressive force on the metal alloy matrix at a temperature between a melting point of the low temperature melting phase and a melting point of the high temperature melting phase or below the melting points of the high and low temperature melting phases.

Abstract: There are provided: an aluminum alloy fin material for a heat exchanger, the aluminum alloy fin material including an aluminum alloy including 0.70 to 1.50 mass % Si, 0.05 to 2.00 mass % Fe, 1.0 to 2.0 mass % Mn, 0.5 to 4.0 mass % Zn, with a balance consisting of Al and inevitable impurities, in which before brazing heating, the amount of solid solution Si is 0.60 mass % or less, and the amount of solid solution Mn is 0.60 mass % or less, and in which a recrystallization temperature in a temperature rise process during the brazing heating is 450° C. or less; a method of producing the aluminum alloy fin material; a heat exchanger using the aluminum alloy fin material; and a method of producing the heat exchanger.

Abstract: The disclosure provides an aluminum alloy including having varying ranges of alloying elements. In various aspects, the alloy has a wt % ratio of Zn to Mg ranging from 4:1 to 7:1. The disclosure further includes methods for producing an aluminum alloy and articles comprising the aluminum alloy.

Abstract: The present disclosure provides an aluminum alloy rolled material for molding, including an Al—Mg—Si—Cu-based alloy containing 0.30 mass % or more Cu. A ratio of a cube orientation density to a random orientation is 10 or more in a plane that is perpendicular to a sheet thickness direction and is at a depth of ¼ of a total sheet thickness from a surface. An absolute value of a difference between a maximum value and a minimum value of an average Taylor factor in a case in which molding is assumed to cause plane strain deformation having a main strain direction that is a rolling width direction is 1.0 or less. The average Taylor factor is obtained for each of subareas that are obtained by equal division of an area, having a 10 mm width in the rolling width direction and a 2 mm length in a rolling direction, into 10 subareas in the rolling width direction. The subareas are in a plane that is perpendicular to the sheet thickness direction and is at a depth of ½ of the total sheet thickness from the surface.

Abstract: Disclosed are a highly versatile magnesium alloy that can achieve both formability and strength in a temperature range including room temperature, and a method for manufacturing the magnesium alloy, wherein the obtained magnesium alloy contains 0.2 to 2 wt % of Al, 0.2 to 1 wt % of Mn, 0.2 to 2 wt % of Zn, and at least 0.2 to 1 wt % of Ca, the remainder comprising Mg and unavoidable impurities, and a precipitate comprising Mg, Ca, and Al is dispersed on the (0001) plane of a magnesium matrix.

Abstract: The purpose of the present invention is to enhance the creep characteristics of an Ni-based alloy. The present invention relates to a Ni-based alloy characterized by having a composition containing, in terms of wt %, 15.00-25.00% Cr, 5.00-15.00% Co, 1.00% to less than 12.00% Mo, 1.50-2.50% Ti, 1.00-2.00% Al, 0.20-1.00% Nb, and 0.0010-0.10% C, and in terms of mass ppm, 10-200 ppm P, 30-250 ppm B, and 30-200 ppm N, the remainder comprising Ni and unavoidable impurities.

Abstract: A wiping device 14 includes a pair of wiping nozzles 141, a nozzle mask 142, a rotating pin 1431a, a holding portion 1431b, and an arm portion 1432. The pair of wiping nozzles 141 is disposed such that nozzle ports 141a face each other, the nozzle mask 142 is disposed at both ends of the nozzle ports 141a of the wiping nozzles 141, the rotating pin 1431a is connected to an upper portion of the nozzle mask 142, the holding portion 1431b holds the rotating pin 1431a, the arm portion 1432 fixes the holding portion 1431b from above, and the rotating pin 1431a is rotatable around an axis and adjusts the position of the nozzle mask 142.

Abstract: A method for treating an inner wall surface of a treatment object uses a treatment object that is at least one of a container housing an ozone gas, a treatment container housing an object to be subjected to a surface treatment using an ozone gas and a pipe configured to supply an ozone gas. The method for treating an inner wall surface of a treatment object includes the steps of: determining whether an abnormal part is present in the inner wall surface of the treatment object or not; and distributing an ozone gas having a concentration of 10% by volume or more and 30% by volume or less and a temperature of 60° C. or less such that the ozone gas contacts the inner wall surface of the treatment object before the step of determining whether an abnormal part is present or not.

Abstract: An ion source enhanced AlCrSiN coating for a cutting tool is provided. The ion source enhanced AlCrSiN coaling has gradient Si content and grain size, including sequentially an AlCrSiN working layer, an interlayer and an AlCrN bottom layer in order from a surface of the coating to a substrate, wherein from the AlCrN bottom layer to the AlCrSiN working layer, Si content in the interlayer is gradually increased, and the interlayer has a texture that changes from coarse columnar crystals to fine nanocrystals and amorphous body. A texture of the coating, in which the grain size is gradually decreased, sequentially includes coarse columnar crystals, fine columnar crystals and fine equiaxed crystals. A method for preparing the ion source enhanced AlCrSiN coating with the gradient Si content and grain size is provided as well as a cutting tool having the coating deposited thereon.

Abstract: An evaporation mask plate, a manufacturing method thereof and an evaporation method are provided. The evaporation mask plate includes a body, a plurality of evaporation cutout regions formed in the body, and a plurality of shielding members arranged on the body. Each shielding member is arranged between two adjacent evaporation cutout regions.

Abstract: A vapor deposition structure of a display panel includes a display panel, a plurality of magnets distributed on one side of the display panel, a mask disposed on another side of the display panel, a plurality of support columns supported between the mask and the display panel, and a vapor deposition source having a vapor deposition side facing the mask. Each of the support columns corresponds to one of the magnets. In the vapor deposition structure of the display panel, by adding the support columns in corresponding regions of the mask and the magnets, a deformation issue caused by an uneven distribution of an adsorption force generated by the magnets is effectively prevented. This ensures a uniform thickness of each light emitting layer structure after vapor deposition, which reduces a defect rate displayed on the display panel.

Abstract: Provided is a transparent structure having improved wear resistance and flexibility, and a structure according to the present invention is a nanolayered structure in which a nitride nanofilm of one or more elements selected from metals and metalloids; and a boron nitride nanofilm are alternately layered.

Abstract: The present disclosure is directed to using MXene compositions as templates for the deposition of oriented perovskite films, and compositions derived from such methods. Certain specific embodiments include methods preparing an oriented perovskite, perovskite-type, or perovskite-like film, the methods comprising: (a) depositing at least one perovskite, perovskite-type, or perovskite-like composition or precursor composition using chemical vapor deposition (CVD), physical vapor deposition (PVD), or atomic layer deposition (ALD) onto a film or layer of a MXene composition supported on a substrate to form a layered composition or precursor composition; and either (b) (1) heat treating or annealing the layered precursor composition to form a layered perovskite-type structure comprising at least one oriented perovskite, perovskite-type, or perovskite-like composition; or (2) annealing the layered composition; or (3) both (1) and (2).

Abstract: An evaporator body for a PVD coating system comprises a basic body and an evaporator surface, to which a titanium dihydride layer is applied. A titanium hydride layer comprises an organic carrier agent and titanium hydride as the single inorganic solid. The thickness of the layer is less than or equal to 10 ?m.

Abstract: The invention relates to an arrangement for coating substrate surfaces by means of electric arc discharge in a vacuum chamber, wherein electric arc discharges between a target (1) which is electrically connected as a cathode and is formed from a metal material are used. Arranged at a distance from the target (1) is an anode (2), with which the electric arc discharges are ignited to form a plasma formed with metal material of the target (1). The target (1) is connected to a first electric power source (3) and the anode (2) to a second electric power source (4), wherein the absolute values of the electric voltages connected to the target (1) and to the anode (2) different from one another.

Abstract: A PVD vacuum plating process for an aluminum alloy surface is provided. The process includes forming a bottom layer: bombarding with an arc power supply, with a bias voltage being controlled at 200-300 V, and the time being controlled at 3-5 minutes; forming an intermediate multi-layer: conducting multilayer transition with an oxide and a nitride, with the number of layers being controlled at 8-10, the time for an individual layer being controlled at 10-20 minutes, and a target current being controlled at 10-20 A. The process also includes forming a transitional engagement layer: conducting mixed sputtering of a transition layer and a color layer for the time of 15-25 minutes; forming the color layer: controlling the time for the color layer at 20-30 minutes; and forming a protective layer: using a high-frequency and large-energy power supply with the time controlled at 40-50 minutes, the process thereby eliminating water plating steps.

Abstract: A sputter trap formed on at least a portion of a sputtering chamber component has a plurality of particles and a particle size distribution plot with at least two different distributions. A method of forming a sputter trap having a particle size distribution plot with at least two different distributions is also provided.

Abstract: Provided is a titanium sputtering target having a recrystallized structure having an average crystal grain diameter of 1 ?m or less. Also provided is a method for producing a titanium sputtering target, the method comprising the steps of: subjecting a cut titanium ingot to large strain processing to provide a processed sheet; subjecting the processed sheet to cold rolling at a rolling ratio of 30% or more to provide a rolled sheet; and subjecting the rolled sheet to a heat treatment at a temperature of 320° C. or less.

Abstract: Methods for making Ta sputter targets and sputter targets made thereby. Ta ingots are compressed along at least two of the x, y, and z dimensions and then cross rolled in at least one of those dimensions. A pair of target blanks is then cut from the cross rolled ingot. The resulting targets have a predominate mix of {100} and {111} textures and have reduced B {100} and B {100} banding factors.

Abstract: The present disclosure discloses a fixing apparatus for fixing a substrate to be processed below a bearing base during an evaporation process, the substrate to be processed includes a base substrate, a ferromagnetic material is formed on a front surface or a back surface of the base substrate, and a magnetic field generator is disposed on a back surface of the bearing base at a location corresponding to the ferromagnetic material; the magnetic field generator is configured to generate a magnetic field so that the ferromagnetic material and the magnetic field generator are approaching to each other under an effect of the magnetic field generated by the magnetic field generator to fix a front surface of the bearing base with the back surface of the base substrate. An evaporation method is further disclosed.

Abstract: The present disclosure provides an apparatus for vacuum processing of a substrate. The apparatus includes a processing vacuum chamber, a maintenance vacuum chamber, an opening for transferring at least a portion of a material deposition source between the processing vacuum chamber and the maintenance vacuum chamber, and a magnetic closing arrangement for magnetically closing the opening.

Abstract: A device for coating a band-shaped substrate within a vacuum chamber is provided. The device comprises a coating device; a cooling device with at least one convex surface area which at least partially touches the band-shaped substrate at the time of the coating; and a coil system comprising at least a supply roller, a receiving roller, and multiple guide rollers, wherein the band-shaped substrate includes an electrically conductive material at least on the side where the band-shaped substrate touches the cooling device, wherein the cooling device has an electrically conductive base body and an outer edge layer comprising an electrically insulating material; the coil system is designed to be potential-free with respect to the electrical mass of the device, and an electrical voltage of at least 10 V is formed between the electrically conductive base body, the cooling device, and the electrically conductive material of the substrate.

Abstract: A device for coating containers, in particular bottles, including a vacuum chamber, a plasma generator, and a gas lance having an outlet opening protruding into the container for introducing a material to be deposited on an inner wall of the container. The inside diameter of the gas lance in a region of the outlet opening is enlarged relative to the inside diameter in a main section of the gas lance.

Abstract: The object of the invention is to provide an improved coating. The coating comprises a high transmittance antireflection layer of a grass-like alumina made by atomic layer deposition technique and subsequent water immersion. The coating also comprises at least one coating layer on the layer of a grass-like alumina, an uppermost coating layer being a low-surface energy coating. The coating is also hydrophobic and transparent.

Abstract: According to one embodiment, a silicon-containing product forming apparatus includes a reaction chamber, an emission path, a process liquid tank, a supplier, and a flow path switcher. The emission path emits an emission material from the reaction chamber. The supplier includes a supply line configured to supply a process liquid to the emission path from the process liquid tank, and a byproduct generated by reaction is treated in the emission path by the supplied process liquid. The flow path switcher switches the communication state of the emission path with each of the reaction chamber and the supply line of the supplier.

Abstract: An apparatus for producing particles or material-coated particles by decomposition of precursor gas in a stirred or mixed particle bed comprises a reactor vessel, an actuator assembly comprising a shaft disposed at least partially within the reactor vessel, and an actuator element coupled to the shaft and rotatable therewith. The apparatus further comprises a precursor gas supply in fluid communication with the actuator assembly. The actuator assembly is configured to circulate seed particles of a seed particle bed in the reactor vessel with the actuator element, and to introduce precursor gas from the gas supply to the seed particle bed, when seed particles are received in the reactor vessel.

Abstract: A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions do not intersect a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.

Abstract: A concentration control apparatus capable of appropriately making a zero adjustment of a concentration measurement mechanism without interrupting a semiconductor manufacturing process includes: a control valve that controls gas flowing through a lead-out flow path; a concentration measurement mechanism that measures the concentration of source gas contained in gas flowing through the lead-out flow path; a concentration controller that controls the control valve so that the deviation between measured concentration measured by the concentration measurement mechanism and preset set concentration decreases; a judgement time point determination part that determines a judgement time point that is the time point when the gas present in a measurement part where the concentration measurement mechanism performs the concentration measurement has been replaced with other gas; and a zero adjustment part that makes a zero adjustment of the concentration measurement mechanism at or after the judgement time point.

Abstract: Examples of a oxide film forming method include providing a precursor to a reaction space including a substrate and a susceptor, and forming an oxide film on the substrate by introducing at least one of CxOy and NxOy (x and y are integers) as a reactant gas into the reaction space while applying a pulse RF power having a duty cycle less than 60% to an RF plate to generate plasma of the reactant gas, the RF plate being provided in the reaction space so as to face the susceptor, wherein the providing and the forming are repeated a predetermined number of times.

Abstract: Described are lanthanide-containing metal coordination complexes which may be used as precursors in thin film depositions, e.g. atomic layer deposition processes. More specifically, described are homoleptic lanthanide-aminoalkoxide metal coordination complexes, lanthanide-carbohydrazide metal coordination complexes, and lanthanide-diazadiene metal coordination complexes. Additionally, methods for depositing lanthanide-containing films through an atomic layer deposition process are described.

Abstract: Protective coatings on an aerospace component are provided. An aerospace component includes a surface containing nickel, nickel superalloy, aluminum, chromium, iron, titanium, hafnium, alloys thereof, or any combination thereof, and a coating disposed on the surface, where the coating contains a nanolaminate film stack having two or more pairs of a first deposited layer and a second deposited layer. The first deposited layer contains chromium oxide, chromium nitride, aluminum oxide, aluminum nitride, or any combination thereof, the second deposited layer contains aluminum oxide, aluminum nitride, silicon oxide, silicon nitride, silicon carbide, yttrium oxide, yttrium nitride, yttrium silicon nitride, hafnium oxide, hafnium nitride, hafnium silicide, hafnium silicate, titanium oxide, titanium nitride, titanium silicide, titanium silicate, or any combination thereof, and the first deposited layer and the second deposited layer have different compositions from each other.

Abstract: Provided is a technique capable of purging a adiabatic region without adversely affecting a processing region. A process chamber including a processing region for processing a substrate and a adiabatic region located below the processing region is included inside. A first exhaust portion for discharging an atmosphere of the processing region, and a second exhaust portion for discharging an atmosphere of the adiabatic region, formed at a position overlapping with the adiabatic region in a height direction, are included.

Abstract: The invention relates to a stabilized lithium metal powder and to a method for producing the same, the stabilized, pure lithium metal powder having been passivated in an organic inert solvent under dispersal conditions with fatty acids or fatty acid esters according to the general formula (I) R—COOR?, in which R stands for C10-C29 groups and R? for H or C1-C8 groups.

Abstract: A symmetrical hydrogen gas generating device comprising a symmetrical hydrogen generating device, a housing encapsulating the symmetrical hydrogen generating device, and a center-point rod residing directly in a center of the symmetrical hydrogen generating device. Together, the housing and the center-point rod improving workability and efficiency of the symmetrical hydrogen generating device. The center-point rod may be a single-piece center-point rod or a multi-piece center-point rod that resides directly at the longitudinal center of the symmetrical hydrogen generating device.

Abstract: The present invention relates to an oxygenated water manufacturing device, which can be used in various fields because it can be applied to and used for not only mineral water or purified water, but also other various drinks such as tap water, barley tea, green tea, corn silk tea, and soju by using a specific configuration, which allows use of only high-purity oxygen from which ozone, which is produced with oxygen when mineral water is electrolyzed, and various inorganic substances and organic substances such as calcium (Ca), magnesium (Mg), and silicon (Si) contained in the mineral water are completely filtered out, and which completely prevents a phenomenon in which oxygen is not generated by deformation of an ion resin membrane disposed between an anode (+) and a cathode (?) in the oxygen generator due to a water-drying phenomenon in the hydrogen outlet.

Abstract: Disclosed are membrane electrode assemblies having a cathode layer comprising a carbon oxide reduction catalyst that promotes reduction of a carbon oxide; an anode layer comprising a catalyst that promotes oxidation of a water; a polymer electrolyte membrane (PEM) layer disposed between, and in contact with, the cathode layer and the anode layer; and a salt having a concentration of at least about 10 uM in at least a portion of the MEA.

Abstract: The disclosure relates to an electrolyzer reactor suitable for the reduction of organic compounds. The reactor includes a membrane electrode assembly with freestanding metallic meshes which serve both as metallic electrode structures for electron transport as well as catalytic surfaces for electron generation and organic compound reduction. Suitable organic compounds for reduction include oxygenated and/or unsaturated hydrocarbon compounds, in particular those characteristic of bio-oil (e.g., alone or a multicomponent mixtures). The reactor and related methods provide a resource- and energy-efficient approach to organic compound reduction, in particular for bio-oil mixtures which can be conveniently upgraded at or near their point of production with minimal or no transportation.

Abstract: Disclosed herein are methods and systems that relate to various configurations of electrochemical oxidation, chlorine oxidation, oxychlorination, chlorination, and epoxidation reactions to form propylene oxide or ethylene oxide.

Abstract: Disclosed are a catalyst composite including a metal; and a nitrogen-containing porous 2D polymer carrier, and a method of manufacturing the catalyst composite. Accordingly, provided is a high-efficiency catalyst composite that does not depend on pH acid concentration using a nitrogen-containing porous two-dimensional (2D) polymer carrier and a low-cost metal.

Abstract: A method can include incorporating graphene oxide (GO) in a solution, reducing the graphene oxide (GO) by refluxing carbon nitride (C3N4) in the solution to form carbon-nitride refluxed-graphene-oxide (C3N4-rGO) composites, and incorporating ruthenium ions into the C3N4-rGO composites to form C3N4-rGO-Ru complexes.

Abstract: An object of the invention is to provide a water splitting device having a low electrolysis voltage and excellent gas separation performance. The water splitting device of the invention is a water splitting device that generates gases from the positive electrode and the negative electrode, the water splitting device including: a bath to be filled with an electrolytic aqueous solution; the positive electrode and the negative electrode disposed in the bath; and a polymer membrane that is ion-permeable and is disposed between the positive electrode and the negative electrode in order to separate the electrolytic aqueous solution filling the bath into the positive electrode side and the negative electrode side, wherein the positive electrode and the negative electrode are installed at a predetermined distance from the polymer membrane, and the moisture content of the polymer membrane is 40% or more.

Abstract: Indium electroplating compositions electroplate substantially defect-free, whisker-free, uniform indium layers which have a smooth surface morphology on nickel. The indium electroplating compositions are environmentally friendly and include select amino acids to provide for the smooth, uniform and defect-free indium deposits.

Abstract: A method of galvanoplastic deposition of a gold alloy on an electrode dipped into a bath including metal gold in alkaline aurocyanide form, organometallic compounds, a wetting agent, a sequestering agent and free cyanide, where the alloy metals are copper, in double copper and potassium cyanide form, and silver in cyanide form, allowing a mirror bright yellow gold alloy to be deposited on the electrode.

Abstract: A method that can plate a predetermined position on various plating targets without implementing a pretreatment thereon is provided. A plating method is performed on a plating target using a plating solution, and the plating method includes at least a bubble ejection step of ejecting a bubble generated by a bubble ejection member to a plating solution. The bubble ejection member includes an electrode formed of a conductive material and an insulating material covering at least a part of the electrode, at least a part of the insulating material forms a bubble ejection port, and an air gap surrounded by the insulating material is formed between at least a part of the electrode and the bubble ejection port.