Abstract: An active matrix substrate according to an aspect of the disclosure includes a pixel portion including a plurality of gate lines and a plurality of source lines, and a plurality of pixel electrodes, and a split switch circuit configured to split a signal from a source driver to supply to the plurality of source lines, wherein the pixel portion includes a first TFT including a first oxide semiconductor layer, the split switch circuit includes a second TFT including a second oxide semiconductor layer and a third oxide semiconductor layer, and the third oxide semiconductor layer covers at least a portion of an upper face and a portion of an edge face of the second oxide semiconductor layer.

Abstract: A display device includes: a first substrate including a display area at which an image is displayed, a non-display area adjacent to the display area, and a first bent portion in the non-display area thereof, the first bent portion disposed in a plane inclined to a plane in which the display area is disposed; a second substrate opposing the first substrate; and a sealing portion which is disposed in the non-display area and attaches the first substrate and the second substrate to each other.

Abstract: An array substrate and a display panel are provided. The array substrate includes a base layer, a first metal layer, a first insulating layer, a second metal layer, a second insulating layer, a first electrode layer, and a reflective layer successively stacked along a direction perpendicular to a plane in which the base layer is located. The second metal layer is used to form a source and a drain of a thin film transistor. The first electrode layer is used to form a pixel electrode. The second insulating layer is provided with a through-hole. The pixel electrode is connected to the drain of the thin film transistor through the through-hole. The reflective layer is provided with a first through-hole, and an orthographic projection of the first through-hole onto the base layer covers an orthographic projection of the through-hole onto the base layer.

Abstract: According to one embodiment, a display device includes a gate line extending in a first direction, first and second source lines crossing the gate line and arranged in the first direction, a first light-shielding layer having first and second openings, and an oxide semiconductor layer crossing the gate line, and in the display device, the first opening and the second opening are arranged in a second direction crossing the first direction between the first source line and the second source line, the gate line is located between the first opening and the second opening, and the oxide semiconductor layer has a first overlapping portion overlapping the first opening.

Abstract: An electrochromic device includes an electrochromic medium including a cathodic component, an anodic component, a hydroquinone, and a solvent.

Abstract: A privacy glazing structure may be fabricated from multiple panes of transparent material that hold an optically active material and also define a between-pane space that is separated from a surrounding environment for thermal insulating properties. The privacy glazing structure may include various functional coatings and intermediate films to enhance the performance and/or life span of the structure. For example, the privacy glazing structure may include a low emissivity coating and a laminate layer positioned between an optically active layer and an exterior environment exposed to sunlight. The low emissivity coating and laminate layer may work in combination to effectively protect the optically active layer from sunlight degradation. Additionally or alternatively, the laminate layer may impart safety and impact resistance properties to the structure.

Abstract: An electrophoretic display system and a developing method are provided. The electrophoretic display system includes an electronic device storing a control ware, a first electrophoretic display device coupled to the electronic device and a first application program interface (API) provided by the control ware. A first application program loads a first image data into the control ware, and calls the first application program interface. The control ware obtains a first driver of a first communication protocol of the first electrophoretic display device according to the first API. The control ware encapsulates the first image data with a first data encapsulating format according to the first driver. The control ware transmits the encapsulated first image data to the first electrophoretic display device according to the first communication protocol.

Abstract: Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor waveguide including a slab section, a rib section extending above the slab section, raised ridges extending above the slab section on both sides of the rib section, and a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or fully p-doped in each cross-section along the semiconductor waveguide. Electrical contact may be made to the doped material via contacts on the raised ridges, and electrical contact may be made to the rib section via periodically arranged sections of the semiconductor waveguide. A cross-section of both the rib section and the slab section in the periodically arranged sections may be mostly n-doped with an undoped portion or mostly p-doped with an undoped portion.

Abstract: An optical switching device includes a drive substrate, a transparent substrate, a liquid crystal layer, and a reflection enhancing film. The drive substrate includes a pixel region including a plurality of pixel electrodes, an outer circumferential region arranged at an outer circumference of the pixel region, and a seal region. The transparent substrate includes a counter electrode. The liquid crystal layer is interposed between the drive substrate and the transparent substrate. The reflection enhancing film is arranged on the pixel region, the outer circumferential region, and the seal region. The reflection enhancing film includes at least one assembly of dielectric films to be stacked, each assembly being a set of two dielectric films having different refractive indexes. The dielectric film as the first layer included in the reflection enhancing film has a different thickness from other dielectric films.

Abstract: A cleansing lighting device includes a laser light source configured to emit light in the visible light spectrum or in the infrared light spectrum. The cleansing lighting device also includes a light frequency up-converter to convert longer wavelength light from the laser light source to shorter wavelength light. The converted light has a dominant wavelength in the portion of the ultraviolet range at or below 380 nm, suitable for the cleansing application. An example cleansing lighting device may also include an optical element, such as a beam shaping lens or a variable optical beam deflector, to distribute the resulting ultraviolet light from the up-converter for the cleansing application. Such a cleansing lighting device may be a standalone device, although the device or individual components for light-based cleansing may be incorporated in a luminaire, for example, together with an artificial light source adapted to general illumination.

Abstract: A system for modulating a terahertz beam includes a multiferroic nanoparticle heterostructure through which a terahertz beam can be propagated, and means for applying an external direct current (DC) magnetic field to the multiferroic nanoparticle heterostructure and the terahertz beam propagating through it, wherein application of the DC magnetic field modulates one or both of an amplitude and a phase of the terahertz beam.

Abstract: An optical crystal for converting an input light beam, the crystal having an ingress surface, an egress surface, and a fan-out grating has a fan-out pattern oriented at an offset angle ? in the range of 1° to 45° with respect to a beam entry plane at a beam ingress location.

Abstract: A monolithically integrated wavelength converted photonic integrated circuit (PIC) is fabricated by forming a trench in the PIC's insulating layer to expose a portion of an output waveguide that transmits a photonically processed optical signal at frequency ?1. A non-linear waveguide formed of a non-linear material with non-linear susceptibility at frequency ?1 and a transmission bandwidth spanning both ?1 and m*?1 where m is an integer of at least two is fabricated in direct physical contact with the exposed portion of the output waveguide. A patterned structure is fabricated in or on the non-linear waveguide to enhance non-linear susceptibility to generate an optical signal at frequency m*?1, which may be emitted directly or coupled to an optical antenna.

Abstract: An imaging apparatus including a lens mount on which an interchangeable lens is mounted registers a position to which a focus adjustment position is moved when a specific operation is executed, determines a type of interchangeable lens mounted on the lens mount, and controls, when the specific operation is executed, switching the focus adjustment position to a position registered based on a determined type of mounted interchangeable lens regardless of the focus adjustment position before switching.

Abstract: The electronic device can be used with a power source module attached to a device main body. The device main body and the power source module are electrically connected to each other by the respective connector portions. The device main body includes a connection terminal portion with a concave shape, and the power source module has a connection terminal portion with a convex shape that is fit to the connection terminal portion of the device main body. A power source terminal group is provided in a first surface, and a ground terminal group and a communication terminal group for communication with the device main body are provided in a second surface on a side opposite to the first surface, from among connection surfaces of the connection terminal portion. The ground terminal group is arranged at a position closer to the power source terminal group than to the communication terminal group.

Abstract: An accessory apparatus includes a first electrical contact configured to receive power from an image capturing apparatus in a state of being attached to the image capturing apparatus, a second electrical contact disposed on a predetermined direction A side of the first electrical contact, configured to be connected to a predetermined electrical contact connected to a reference potential of the image capturing apparatus in the state of being attached to the image capturing apparatus, and configured to be unconnected to the reference potential during detachment from the image capturing apparatus, and a capacitor device connected to the first electrical contact and the second electrical contact. Further, the accessory apparatus includes a reduction unit configured to reduce charge stored in the capacitor device during the detachment from the image capturing apparatus.

Abstract: An electronic apparatus that is capable of cooling heat sources efficiently by taking in outside air through intake ports effectively while reducing the number of components. The electronic apparatus obtains an image signal corresponding to an optical image formed through an image pickup lens. A first heat generating element is implemented in a first substrate. A second heat generating element is implemented in a second substrate. A first duct is connected to the first heat generating element at a position nearer to an exhaust port formed in a housing of the electronic apparatus than a first blower that sends air to the first duct. A second duct is connected to the second heat generating element at a position nearer to the exhaust port than a second blower that sends air to the second duct.

Abstract: A method and a system for controlling tracking photographing of a stabilizer are provided. The method for controlling the tracking photographing includes: acquiring angle values of the pitch axle, the roll axle, and the heading axle in real time; receiving a tracking photographing mode instruction, and allowing the stabilizer to enter a tracking photographing mode according to the tracking photographing mode instruction; receiving a target position parameter of a photographing target in real time; calculating angle values to be adjusted of the pitch axle, the roll axle, and the heading axle according to the target position parameter and the angle values of the pitch axle, the roll axle, and the heading axle; and adjusting angles of the pitch axle, the roll axle, and the heading axle according to the angle values to be adjusted to locate the photographing target at a lens center of the photographing device.

Abstract: The herein described invention is a camera mounting system where the user can safely install a camera high in a tree without having to leave the ground. The camera mounting system is comprised of a tree attachment, ball mount, and camera mount. The system is installed by using an extension pole with releasable capture means for installation and removal of the system. This system is also comprised of a multi-mount adapter, which allows a user to install multiple wire connected mounted components on one tree attachment, or in different elevated positions. Once installed, a camera can be accurately aimed by using a laser attachment and standard laser pen light. This system is further comprised of a saw attachment, which can be used to clear branches from the installation area of the tree being utilized.

Abstract: A camera pole for elevating and controlling a camera. A pole having a base section and a least one telescoping section which extends from the base section. Where a final telescoping section is a top section that is highest and the base section is closest to ground level. A stand to receive the pole and support the pole. A camera control assembly comprising an camera mount, tension cable and handle assembly that can be adjusted for any pole height.

Abstract: A fly-eye lens includes: an incident lens assemblage comprising a plurality of incident lenses that are aligned in a vertical direction, wherein each of the incident lenses has a quadrangular shape, wherein horizontal lens widths of the incident lens are the same, and wherein vertical lens widths of at least some of the incident lens are different from one another; and an emission lens assemblage comprising a plurality of emission lenses that are aligned in the vertical direction so as to be optically opposed to the incident lenses, wherein each of the emission lenses has a quadrangular shape, and wherein horizontal lens widths of the emission lenses lens are the same.

Abstract: A projector includes an exterior housing of the projector, a first cooling target, and a cooling apparatus provided in the exterior housing and cooling the first cooling target. The cooling apparatus includes a first compressor compressing an operating fluid in a gas phase, a condenser condensing the gas-phase operating fluid compressed by the first compressor into the operating fluid in a liquid phase, a first expander decompressing the liquid-phase operating fluid condensed by the condenser to change to the operating fluid in which the liquid phase and the gas phase are mixed with each other, and a first evaporator changing part of the liquid-phase operating fluid supplied from the first expander to the gas-phase operating fluid by using heat transferred from the first cooling target and discharging the gas-phase operating fluid to the first compressor.

Abstract: A wavelength conversion device includes a phosphor layer that is excited by excitation light to thereby emit light in a wavelength band different from a wavelength band of the excitation light, a base material that includes a first surface and holds the phosphor layer on the first surface, and a third lens disposed to be opposed to the phosphor layer. An opening section juxtaposed with the phosphor layer is provided on the first surface. A channel that causes the opening section and the outside of the wavelength conversion device to communicate is provided in the base material. The third lens includes an opposed surface opposed to the phosphor layer and the opening section.

Abstract: A wavelength conversion element includes first to fourth wavelength converters configured to convert incident from a light source into first to fourth light fluxes having first to fourth wavelength band different from a wavelength band of the light from the light source and first to fourth peak intensities at first to fourth wavelengths. The first to fourth wavelengths satisfy predetermined conditions.

Abstract: Provided herein is a retroreflective article comprising a retroreflective film and a plurality of isosceles triangular pyramid prisms embossed on the back surface of the retroreflective film. The prisms are configured such that the article reflects an incident light beam into two reflected light beams that are offset from and on opposite sides of the incident light beam. The two reflected light beams can provide two viewing zones located at different positions relative to the incident light beam source.

Abstract: A projection apparatus includes a plurality of two-fluid nozzles, a projection-apparatus-side-gas-flow-path, a gas valve, a projection-apparatus-side-liquid-flow-path, a liquid valve, a projector, a mist concentration measurer, and a controller. The controller starts and stops spraying of a mist by controlling the gas valve and the liquid valve on the basis of an image or a video projected onto a screen from the projector. The controller receives a signal indicating a mist concentration from the mist concentration measurer, starts and stops spraying of the mist by controlling the gas valve and the liquid valve on the basis of the received signal, and thus controls the mist concentration.

Abstract: Embodiments of a drain in a lithographic projection apparatus are described that have, for example, a feature which reduces inflow of gas into the drain during a period when no liquid is present in the drain. In one example, a passive liquid removal mechanism is provided such that the pressure of gas in the drain is equal to the ambient gas pressure and in another embodiment a flap is provided to close off a chamber during times when no liquid needs removing.

Abstract: The problem of 3D panel display systems either (a) requiring special glasses to separate left and right viewing images, or (b) having auto-stereoscopic 3D with compromised fidelity, is solved by providing a projection three dimensional (3D) display system for providing glass-free, 3D display to a plurality of viewing volumetric pairs (VVAs) in space corresponding to a hypothetical plurality of viewers' eye aperture pairs, the projection 3D display system comprising: (a) a dual-image projector configured to project both a left viewing tri-color image and a right viewing tri-color image; and (b) means for (1) receiving a tri-color mixed input beam encompassing the left and right viewing tri-color images, (2) multiplying the tri-color mixed input beam into a plurality of tri-color mixed output beams, and (3) focusing the plurality of tri-color mixed beams for viewing at the VVAs.

Abstract: A substrate assembly may include a substrate base; and a low emission implantation mask, disposed on the substrate base. The low emission implantation mask may include a carbon-containing material, the carbon-containing material comprising an isotopically purified carbon, formed from a 12C carbon isotope precursor.

Abstract: A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.

Abstract: Provided is a method for fabricating a semiconductor device including performing an OPC process to an IC layout pattern to generate a post-OPC layout pattern. In some embodiments, the method further includes applying an MPC model to the post-OPC layout pattern to generate a simulated mask pattern. By way of example, the simulated mask pattern is compared to a mask pattern calculated from a target wafer pattern. Thereafter, and based on the comparing, an outcome of an MPC process is determined.

Abstract: A method for manufacturing a photo mask for a semiconductor device includes receiving a plurality of hotspot regions of a mask layout corresponding to the semiconductor device. The method further includes classifying the plurality of hotspot regions into two or more hotspot groups such that same or similar hotspot regions are classified into same hotspot groups. The hotspot groups includes a first hotspot group that has at least two hotspot regions. The method also includes correcting a first hotspot region of the first hotspot group to generate an enhancement of the first hotspot region and correcting other hotspot regions of the first hotspot group using the enhancement of the first hotspot region to generate enhancements of other hotspot regions of the first hotspot group.

Abstract: Provided is a pellicle to be used in a photolithography process. The pellicle a film, at least a portion of which includes carbon allotropes. The film has a first surface and a second surface facing the first surface, the film comprises a doped region including dopants, the doped region adjacent to the first surface, the dopants include least one of boron or nitrogen, and the doped region comprises a bond between an atom of at least one of the dopants and a carbon atom.

Abstract: A method for manufacturing a photomask is provided. The method includes generating a plurality of virtual layouts; calculating a score for each of the plurality of virtual layouts in accordance with a total overlay area; comparing the scores of the plurality of virtual layouts and determining a modified layout having a target score out of the plurality of virtual layouts; and outputting the modified layout to a photomask. Each of the virtual layouts includes a plurality of the shifted features. A semiconductor manufacturing method is also provided.

Abstract: A mold includes a rugged pattern layer, an inorganic sheet layer, and an elastic sheet layer. The inorganic sheet layer is formed of an inorganic material and supports the rugged pattern layer. The elastic sheet layer supports the inorganic sheet layer.

Abstract: Reducing an overlay error in nanoimprint lithography includes forming an imprinted substrate having pairs of corresponding peripheral overlay marks and corresponding central overlay marks on the imprinted substrate. An in-plane overlay error is assessed based on relative positions of corresponding central overlay marks, and a combined overlay error is assessed based on relative positions of corresponding peripheral overlay marks. A difference between the combined overlay error and the in-plane overlay error is assessed to yield an adjusted overlay error for each pair of corresponding peripheral overlay marks.

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a metal-containing chemical; performing an exposing process to the photoresist layer; and performing a first developing process to the photoresist layer using a first developer, thereby forming a patterned resist layer, wherein the first developer includes a first solvent and a chemical additive to remove metal residuals generated from the metal-containing chemical.

Abstract: Provided is a positive photosensitive resin composition having high sensitivity, high definition, and high adhesiveness and being capable of maintaining blackness and high light-blocking properties, even after a high-temperature curing step, e.g., at 250° C. This positive photosensitive resin composition contains: a binder resin (A); a quinonediazide compound (B); and at least one type of black dye (C) selected from black dyes specified by the color indexes of solvent black 27-47. The black dye (C) is ideally specified by the color index of solvent black 27, 29, or 34. This composition is capable of being suitably used in positive radiation lithography and can be used to form organic EL element partitions and insulating films.

Abstract: A novel photocurable resin composition including: a polymer with a weight average molecular weight of 1,000 to 50,000, the polymer having a structural unit of formula (1), and having a structure of formula (2) at an end: wherein X is a C1-6 alkyl group, vinyl group, allyl group, or glycidyl group; m and n are each independently 0 or 1; Q is a divalent hydrocarbon group having a carbon atom number of 1 to 16; Z is a divalent linking group having a carbon atom number of 1 to 4, wherein the divalent linking group is attached to the —O— group in formula (1); and R1 is a hydrogen atom or methyl group; a radical photopolymerization initiator; and a solvent.

Abstract: A resist composition including a polymeric compound having a structural unit represented by formula (a0-1) and an acid generator consisting of a compound represented by general formula (b1-1) in which Ra00 represents an acid dissociable group represented by general formula (a0-r1-1); Ra01, Ra02, Ra031, Ra032 and Ra033 represent a hydrocarbon; Ya0 represents a quaternary carbon atom; R101 represents a hydrocarbon group having at least 1 hydroxy group as a substituent; Y101 represents a single bond or a divalent linking group containing an oxygen atom; and V101 represents a single bond, an alkylene group or a fluorinated alkylene group).

Abstract: Methods for forming a semiconductor structure including using a photoresist material are provided. The method for forming a semiconductor structure includes forming a material layer over a substrate and forming a photoresist layer over the material layer. The method for forming a semiconductor structure further includes performing an exposure process on the photoresist layer and developing the photoresist layer. In addition, the photoresist layer is made of a photoresist material comprising a photosensitive polymer, and the photosensitive polymer has a first photosensitive functional group bonding to a main chain of the photosensitive polymer and a first acid labile group bonding to the first photosensitive functional group.

Abstract: A photoresist layer is coated over a wafer. The photoresist layer includes a metal-containing material. An extreme ultraviolet (EUV) lithography process is performed to the photoresist layer to form a patterned photoresist. The wafer is cleaned with a cleaning fluid to remove the metal-containing material. The cleaning fluid includes a solvent having Hansen solubility parameters of delta D in a range between 13 and 25, delta P in a range between 3 and 25, and delta H in a range between 4 and 30. The solvent contains an acid with an acid dissociation constant less than 4 or a base with an acid dissociation constant greater than 9.

Abstract: The present disclosure provides lithography resist materials and corresponding lithography techniques for improving lithography resolution, in particular, by reducing swelling of resist layers during development. An exemplary lithography method includes performing a treatment process on a resist layer to cause cross-linking of acid labile group components of the resist layer via cross-linkable functional components, performing an exposure process on the resist layer, and performing a development process on the resist layer. In some implementations, the resist layer includes an exposed portion and an unexposed portion after the exposure process, and the treatment process reduces solubility of the unexposed portion to a developer used during the development process by increasing a molecular weight of a polymer in the unexposed portion. The treatment process is performed before or after the exposure process.

Abstract: Solvents useful for removing, among other things, photoresists and poly(amic acid)/polyimide from display/semiconductor substrates or electronic processing equipment, consist essentially of: (A) a first component consisting of at least one of dimethyl sulfoxide (DMSO) and N-formyl morpholine, and (B) a second component consisting of at least one of N,N-dimethyl propionamide, 3-methoxy-N,N-dimethyl propanamide, N,N-dimethyl acetoacetamide and N-methyl-?-caprolactam.

Abstract: A reticle-masking structure is provided. The reticle-masking structure includes a magnetic substrate and a paramagnetic part disposed on the magnetic substrate. The magnetic substrate has a magnetic field, and the paramagnetic part has an induced magnetic field in a direction of the magnetic field of the magnetic substrate. The paramagnetic part includes a rough surface defined by a plurality of protrusion structures of the paramagnetic part. A method for forming a reticle-masking structure and an extreme ultraviolet apparatus are also provided.

Abstract: A light irradiation method includes splitting light from a coherent light source, which outputs the light at a wavelength equal to or less than 300 nm, into a plurality of branch beams. A wavefront of the light is shaped before splitting the light. The light irradiation method also includes causing the branch beams to intersect at an interference angle equal to or less than 20° to generate interfered light, and irradiating a substrate with the interfered light while continuously conveying the substrate relative to the interfered light.

Abstract: An exposure apparatus includes: a first light source that generates first exposure light, a diaphragm having plurality of openings positioned between the first light source and an exposure photomask, a plurality of first projection optical systems that individually project an optical image realized by the first exposure light transmitted through each of the plurality of openings on an exposure target, a second light source that generates second exposure light, and a correction stepper. The correction stepper irradiates a light amount correction region with the second exposure light so as to limit an irradiation range of the exposure target to be irradiated with the second exposure light transmitted through the exposure photomask, and the light amount correction region is a region extending in a first direction by a width of a multi-opening region in a second direction in a plan view.

Abstract: There is provided a reflective image-forming optical system which is applicable to an exposure apparatus using, for example, EUV light and which is capable of increasing numerical aperture while enabling optical path separation of light fluxes. In a reflective imaging optical system (6) forming an image of a first plane (4) onto a second plane (7), the numerical aperture on a side of the second plane with respect to a first direction (X direction) on the second plane is greater than 1.1 times a numerical aperture on the side of the second plane with respect to a second direction (Y direction) crossing the first direction on the second plane. The reflecting imaging optical system has an aperture stop (AS) defining the numerical aperture on the side of the second plane, and the aperture stop has an elliptic-shaped opening of which size in a major axis direction (X direction) is greater than 1.1 times that in a minor axis direction (Y direction).

Abstract: A method for adjusting a lithography process, wherein processing parameters of the lithography process include a first group of processing parameters and a second group of processing parameters, the method including: obtaining a change of the second group of processing parameters; determining a change of a sub-process window (sub-PW) as a result of the change of the second group of processing parameters, wherein the sub-PW is spanned by only the first group of processing parameters; and adjusting the first group of processing parameters based on the change of the sub-PW.

Abstract: A method includes selecting a group of wafers, each of the wafers having a resist pattern; selecting a group of fields for each of the wafers; selecting one or more points on each of the fields; measuring overlay errors on the resist pattern at locations associated with the one or more points selected on the respective wafers; and generating a combined overlay correction map based on measurements of the overlay errors on the wafers. At least one of the selecting of the group of wafers, the selecting of the group of fields, and the selecting of the one or more points is based on a computer-generated model.