Abstract: Embodiments disclose LEDs that operate using impact ionization. Devices include a first conductivity type layer, an intrinsic layer, and an impact ionization layer. In some embodiments, a charge layer is on the intrinsic layer, where the charge layer comprises a first material and has a net charge. The impact ionization layer comprises a second material. The charge layer forms a barrier for transporting carriers until a bias of at least 1.5 times a bandgap of the second material is applied, and a resulting electric field in the impact ionization layer is greater than or equal to a threshold for the second material. In some embodiments the first intrinsic layer is on the first conductivity type layer and is made of the first material, and a compositional step at an interface between the intrinsic layer and the impact ionization layer creates a barrier for transporting carriers.

Abstract: A method for producing a light omitting device includes providing a substrate and forming an epitaxial structure thereon, forming first and second electrodes on a side of the epitaxial structure facing away from the substrate, and removing the substrate. The epitaxial structure includes a first-type semiconductor layer, an active layer, a second-type semiconductor layer, and an AlGaAs-based semiconductor layer formed on the substrate in a distal-to-proximal manner. The AlGaAs-based semiconductor layer has a thickness of not less than 30 ?m, and is configured to support the rest of the epitaxial structure and serve as a light exiting layer. The device produced by the method is also disclosed.

Abstract: A method of manufacturing electronic devices, including the successive steps of: a) growing, on a surface of a first substrate, a stack including at least one semiconductor layer; b) bonding a second substrate on a surface of the stack opposite to the first substrate, and then removing the first substrate; c) bonding a third substrate to a surface of the stack opposite to the second substrate, and then removing the second substrate; d) cutting the assembly including the third substrate and the stack into a plurality of first chips each including a portion of the stack; and e) bonding each first chip, by its surface opposite to the third substrate, to a surface of a fourth semiconductor substrate inside and on top of which a plurality of integrated control circuits have been previously formed.

Abstract: The present invention provides light-emitting devices with improved quantum efficiency. The light emitting diode structure comprising: a p-doped layer an n-doped layer; and a multiple quantum well structure sandwiched between the p-doped layer and n-doped layer, wherein the multiple quantum well structure comprising a quantum well disposed between n-doped barrier layers.

Abstract: The light-emitting diode package includes a plurality of bumps being a couple corresponding to each other. Each of the bumps has a first part and a second part placed under the first part, and a gap is formed between the bumps in a period-repeating wriggle shape or an irregular wriggle shape. Accordingly, the distance between the bumps of the light-emitting diode package is small, which results in a less stress being concentrated at the space between the bumps, as a result, a crack is difficultly caused by the stress to the light-emitting diode package. In other words, the structural strength between the bumps and the covering part is enhanced. Still, while being manufactured, the yield rate of the light-emitting diode package is also improved since there is almost no crack to reduce the yield rate.

Abstract: A micro light emitting diode including an epitaxial structure and two electrodes is provided. The epitaxial structure includes a first surface, a second surface and a side surface. The first surface is opposite to the second surface, and the side surface is connected to the first surface and the second surface. The side surface includes a first portion and a second portion. The first portion is connected to the second portion to form a turning position. A width of the epitaxial structure gradually increases from the first surface to the turning position and gradually decreases from the turning position to the second surface. The two electrodes are disposed on the epitaxial structure and are electrically connected to the epitaxial structure. A micro light emitting diode device substrate adopting the micro light emitting diode is also provided.

Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

Abstract: A light-emitting device includes an epitaxial structure, and first and second electrodes. The epitaxial structure has a first surface and a second surface opposite to each other, first dislocation density regions and second dislocation density regions. The first dislocation density regions and the second dislocation density regions are alternately disposed between the first surface and the second surface. A dislocation density of each first dislocation density region is lower than a dislocation density of each second dislocation density region and a quantity of the first dislocation density regions is at least ten. The epitaxial structure further includes a light-emitting layer, a first-type semiconductor layer and a second-type semiconductor layer disposed on two opposite sides of the light-emitting layer. The first electrode and the second electrode are electrically connected to the first-type semiconductor layer and the second-type semiconductor layer, respectively.

Abstract: Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly LED chip structures are disclosed. LED chip structures are disclosed that include reduced bonding topography between active LED structures and carrier submounts. For certain LED chip structures, active LED structures are formed on a growth substrate and subsequently bonded to a carrier substrate. Bonding between active LED structures and carrier submounts is typically provided by metal bonding materials. By providing reduced bonding topography between active LED structures and carrier submounts, bonding strength of metal bonding materials may be improved. Electrical connection configurations for certain layers of active LED structures are disclosed that promote reduced bonding topography. Peripheral border configurations of carrier submounts are also disclosed with that promote reduced bonding topography along the peripheral borders.

Abstract: A light emitting element package includes a substrate provided with an interconnect portion, a light emitting element mounted on the substrate and connected to the interconnect portion, and a cover member contacting an upper surface of the light emitting element while covering the light emitting element. The cover member comprises Teflon-based organic polymers and has a light transmittance of 85% or more in an ultraviolet wavelength range.

Abstract: An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment an optoelectronic semiconductor component includes a semiconductor layer sequence having a first region of a first conductivity type, a reflection layer, a passivation layer arranged between the semiconductor layer sequence and the reflection layer, a first barrier layer arranged between the first region of the semiconductor layer sequence and the passivation layer and a second barrier layer arranged between the passivation layer and the reflection layer, wherein the first barrier layer is configured to reduce or prevent diffusion of contaminants from the passivation layer into the semiconductor layer sequence, and wherein the second barrier layer is configured to reduce or prevent diffusion of contaminants from the passivation layer into the reflection layer.

Abstract: A light-emitting diode (LED) chip with reflective layers having high reflectivity is disclosed. The LED chip may include an active LED structure including an active layer between an n-type layer and a p-type layer. A first reflective layer is adjacent the active LED structure and comprises a plurality of dielectric layers with varying optical thicknesses. The plurality of dielectric layers may include a plurality of first dielectric layers and a plurality of second dielectric layers of varying thicknesses and compositions. The LED chip may further include a second reflective layer that includes an electrically conductive path through the first reflective layer. An adhesion layer may be provided between the first reflective layer and the second reflective layer. The adhesion layer may comprise a metal oxide that promotes improved adhesion with reduced optical losses.

Abstract: A display module, a display screen and a display system are disclosed. The display module comprises a frame and multiple display unit boards assembled and installed on the frame to form a display surface. The frame comprises a border and a support frame installed in the border. Each display unit board comprises a circuit board and multiple pixel points installed on a front side of the circuit board, wherein a back side of the circuit board is installed on the border and the support frame, and each pixel point includes at least one LED chip. According to the display module of the invention, multiple display unit boards are assembled on the frame to form a display surface.

Abstract: A light-emitting device efficiently performs wavelength conversion and includes a light-emitting element having a light-emitting surface, a wavelength conversion member having an incident surface that is larger than the light-emitting surface of the light-emitting element, a light-transmissive member that includes a first portion disposed across a lateral surface of the light-emitting element and the incident surface of the wavelength conversion member, and a light-reflective member disposed to cover the lateral surface of the light-emitting element while being in contact with the first portion of the light-transmissive member. The incident surface of the wavelength conversion member faces the light-emitting surface of the light-emitting element and has an outer periphery located outward of an outer periphery of the light-emitting surface.

Abstract: A light emitting device includes a first light emitting element including a rectangular first light extraction surface, a second light emitting element including a rectangular second light extraction surface and emitting light having an emission peak wavelength different from an emission peak wavelength of the first light emitting element, and a light-transmissive member covering the first light extraction surface and the second light extraction surface. The light-transmissive member includes a first light-transmissive layer facing the first light extraction surface and the second light extraction surface, a wavelength conversion layer located on the first light-transmissive layer, and a second light-transmissive layer located on the wavelength conversion layer. The first light-transmissive layer contains a first matrix and first diffusive particles. The wavelength conversion layer contains a second matrix and wavelength conversion particles.

Abstract: A phosphor sheet (6) is provided comprising the following elements: a first polymer sheet (1) of a first polymer material, which is partially cured, a second polymer sheet (4) of a second polymer material, which is partially cured, and a phosphor layer (4) comprising phosphor particles with a plurality of first phosphor particles, said first phosphor particles convert electromagnetic radiation of a first wavelength range into electromagnetic radiation of a second wavelength range, wherein the phosphor layer (3) is sandwiched between the first polymer sheet (1) and the second polymer sheet (4). Further, a method for the production of a phosphor sheet (6), an optoelectronic device and a method for the production of an optoelectronic device are provided.

Abstract: An optoelectronic component that emits electromagnetic radiation from a radiation exit surface of the optoelectronic component includes a radiation-emitting semiconductor chip that produces electromagnetic radiation, and a marker element applied to the radiation exit surface of the optoelectronic component, the marker element including a dye substance that can be removed from the radiation exit surface using a solvent and/or is permeable to the electromagnetic radiation of the optoelectronic component, wherein the dye substance includes a resin into which fluorescent particles are introduced that convert electromagnetic radiation of a first wavelength range into electromagnetic radiation of a second wavelength range, the first wavelength range and the second wavelength range being within the ultraviolet spectral range.

Abstract: A lighting device is provided. The lighting device includes a carrier, a light-emitting diode chip, and a wavelength up-conversion structure. The light-emitting diode chip is disposed on the carrier and is configured to emit a first light, which has a peak wavelength between 800 nm and 1000 nm. The wavelength up-conversion structure is disposed on the light-emitting diode chip and is configured to convert part of the first light into a second light, which has a converted spectrum between 400 nm and 700 nm.

Abstract: A light emitting diode package includes an upper housing and a lower housing. The upper housing includes a first light emitting diode (LED) chip arranged therein, a second LED chip arranged to be spaced apart from the first LED chip in a first direction, two light discharge structures, first electrodes formed on a lower surface of the first LED chip, and second electrodes formed on a lower surface of the second LED chip. The lower housing includes at least three grooves at a lower surface thereof. The lower housing further includes three or more pads. The first pair of via-holes are arranged to connect the first electrodes to one or more of the pads in a second direction perpendicular to the first direction. The second pair of via-holes are arranged to connect the second electrodes to one or more of the pads in the second direction.

Abstract: An optoelectronic semiconductor device and a method for producing an optoelectronic semiconductor device are disclosed.

Abstract: A light emitting diode may include a light emission layer and a charge transport layer disposed on the light emission layer. A grating including a plurality of nanoholes may be formed by removing a portion of the charge transport layer and/or the light emission layer and depositing a plasmonic metamaterial on a remaining portion of the charge transport layer and/or the light emission layer. The nanoholes may include the plasmonic metamaterial deposited inside the recesses formed by the remaining portion of the charge transport layer and/or the light emission layer, with an additional portion of the charge transport layer disposed on top. A pitch, diameter, and/or depth of the nanoholes may be configured to maximize the quantum efficiency of the light emitting diode, especially at a microscale of less than 100 microns.

Abstract: A micro light emitting device display apparatus including a circuit substrate, a plurality of epitaxial structures, a plurality of contact pads and a plurality of light shielding patterns is provided. The plurality of epitaxial structures are dispersedly arranged on the circuit substrate. The plurality of contact pads are disposed between the plurality of epitaxial structures and the circuit substrate. The plurality of epitaxial structures are electrically connected to the circuit substrate via the plurality of contact pads respectively. The plurality of light shielding patterns and the plurality of contact pads are alternately arranged on the circuit substrate, and each of the light shielding patterns is connected between two adjacent contact pads without overlapping with the contact pads and is adapted to block light with a wavelength ranging from 150 nm to 400 nm from penetrating through. A method of fabricating the micro light emitting device display apparatus is also provided.

Abstract: A light source includes a semiconductor element with a substrate, a translucent sealing resin that covers the semiconductor element, and a reflective layer that is disposed on an upper face of the sealing resin.

Abstract: The present disclosure provides a driving backplane, a method for manufacturing the same, and a display device. The driving backplane includes: a substrate; and a bonding layer located on a side of the substrate and configured to bond with a plurality of Micro LEDs arranged in an array, wherein the bonding layer comprises a bonding metal layer and a conductive protection layer that are stacked sequentially along a direction away from the substrate, an orthographic projection of the conductive protection layer on the substrate substantially coinciding with an orthographic projection of the bonding metal layer on the substrate.

Abstract: A light emitting diode (LED) element is provided. The LED element includes: an active layer configured to generate light; a first semiconductor layer disposed on a first surface of the active layer and doped with an n-type dopant; a second semiconductor layer disposed on a second surface of the active layer opposite to the first surface, the second semiconductor layer being doped with a p-type dopant; a first electrode pad and a second electrode pad electrically connected to the first semiconductor layer and the second semiconductor layer, respectively, the first electrode pad comprising a first contact surface and the second electrode pad comprising a second contact surface; and a conductive filler disposed on at least one contact surface from among the first contact surface and the second contact surface to increase a contact area of the at least one contact surface.

Abstract: In an embodiment a pixel for a multi-pixel LED module includes a first light-emitting semiconductor chip having a first upper chip side and a first lead-frame section having a first upper side, a first contacting protrusion and a second contacting protrusion, wherein the first contacting protrusion and the second contacting protrusion extend from the first upper side, and wherein the first light-emitting semiconductor chip is embedded in an electrically insulating material such that the first upper side is covered by the electrically insulating material and the first upper chip side and the contacting protrusions are exposed.

Abstract: A novel display panel that is highly convenient or reliable is provided. A novel display device that is highly convenient or reliable is provided. A novel input/output device that is highly convenient or reliable is provided. A novel data processing device that is highly convenient or reliable is provided. The display panel includes a pixel, a functional layer, and a heat radiation member, the pixel includes a display element and a pixel circuit, and the pixel circuit is electrically connected to the display element. The functional layer includes the pixel circuit, a terminal, and an intermediate film, and the terminal is connected to the display element. The intermediate film includes an opening, and the heat radiation member is connected to the terminal through the opening.

Abstract: A mobile clamp attaches to a steam pipe and converts thermal energy to electric energy. One side of the clamp is generally open to allow for insertion of the steam pipe. During insertion, opposing blocks on either side of the clamp are deflected apart. Each block includes a curved channel extending along the length of the block to receive the steam pipe. Fitting the steam pipe within the channel aligns the clamp on the steam pipe. A biasing force applied to the blocks to return each block to an initial position provides a clamping force on the steam pipe to positively retain the clamp on the pipe. Thermoelectric devices are mounted on the blocks to convert the thermal energy into electrical energy. Thermal energy is transmitted from the steam, through the steam pipe, through the block pressed against the steam pipe, and to the thermoelectric device.

Abstract: A thermoelectric generation system is provided with: a thermoelectric element; a heating unit; a cooling unit; a heat transfer unit; a pressure gauge; a first valve; and a control unit. The thermoelectric element uses a temperature difference to generate power. The heating unit has a first heat medium path through which a heat medium passes, and heats the thermoelectric element by means of the heat of the heat medium. The cooling unit cools the thermoelectric element. The heat transfer unit has a second heat medium path through which the heat medium passes and which is connected to the first heat medium path, and heats, by using a heat source, the heat medium reduced in temperature as a result of heating the thermoelectric element. The pressure gauge detects the rise or fall of a value (pressure of heat medium) in accordance with the temperature of the heat source.

Abstract: A thermoelectric element according to an embodiment of the present invention comprises: a first metal substrate; a first resin layer disposed on the first metal substrate and in direct contact with the first metal substrate; a plurality of first electrodes disposed on the first resin layer; a plurality of thermoelectric legs disposed on the plurality of first electrodes; a plurality of second electrodes disposed on the plurality of thermoelectric legs; a second resin layer disposed on the plurality of second electrodes; and a second metal substrate disposed on the second resin layer, wherein the first resin layer comprises a polymeric resin and an inorganic filler and at least a part of side surfaces of the plurality of first electrodes are embedded in the first resin layer.

Abstract: The device as defined by the claims comprises electroactive polymer actuators (30) each of which is addressed by two addressing lines for selecting the electroactive polymer actuator and a current direction drive mode. A first circuit (42) is for driving a controllable current through the electroactive actuator in a first direction and a second circuit (44) is for driving a controllable current through the electroactive actuator in a second direction, opposite to the first direction. This device enables an actuator to be driven with current in two opposite directions so that the actuator may be driven bidirectionally between actuation states.

Abstract: In a non-limiting embodiment, a device may include a substrate, and a hybrid active structure disposed over the substrate. The hybrid active structure may include an anchor region and a free region. The hybrid active structure may be connected to the substrate at least at the anchor region. The anchor region may include at least a segment of a piezoelectric stack portion. The piezoelectric stack portion may include a first electrode layer, a piezoelectric layer over the first electrode layer, and a second electrode layer over the piezoelectric layer. The free region may include at least a segment of a mechanical portion. The piezoelectric stack portion may overlap the mechanical portion at edges of the piezoelectric stack portion.

Abstract: The present invention discloses a transparent piezoelectric single crystal with high piezoelectricity and a preparation method thereof, a photoacoustic transducer, a transparent actuator and an optical-electro-mechanical coupling device prepared from the transparent piezoelectric single crystal with high piezoelectricity. The piezoelectric single crystal is a binary/ternary relaxor-PT based ferroelectric crystal poled by an AC electric field, and has ultrahigh piezoelectricity and excellent transparency.

Abstract: A magnetic memory device includes a device isolation layer on a substrate and defining an active region, a source region and a drain region apart from each other in the active region of the substrate, a channel portion in the active region of the substrate and between the source region and the drain region, a spin orbit torque (SOT)-inducing layer on the channel portion of the substrate, a magnetic tunnel junction (MTJ) structure on the SOT-inducing layer, the MTJ structure including a free layer on the SOT-inducing layer, a tunnel barrier layer on the free layer, and a pinned layer on the tunnel barrier, a word line on the MTJ structure, a source line electrically connected to the source region, and a bit line electrically connected to the drain region.

Abstract: Disclosed is a method of forming a doughnut-shaped skyrmion, the method including heating a local area of a vertical magnetic thin film magnetized in a first direction, which is any one of an upward direction and a downward direction, applying a magnetic field having a second direction, which is opposite the first direction, and having intensity higher than coercive force of the vertical magnetic thin film to the vertical magnetic thin film to form a first area magnetized in the second direction, applying a magnetic field having the second direction to the vertical magnetic thin film to form a second area, which is an extension of the first area, and applying a magnetic field having the first direction to the vertical magnetic thin film to form a third area magnetized in the first direction in the second area.

Abstract: A spin-orbit torque device 100 is described. In an embodiment, the spin-orbit torque device 100 comprises: a first pinning region 106 having a first fixed magnetization direction; a second pinning region 108 having a second fixed magnetization direction which is in a different direction to the first fixed magnetization direction; a magnetic layer 102 having a switchable magnetization direction; and a spin source layer 104 configured to generate a spin current for propagating a domain wall between the first and second pinning regions 106, 108 to switch the switchable magnetization direction of the magnetic layer 102 between the first and second fixed magnetization directions.

Abstract: A method for fabricating semiconductor device includes the steps of: forming an inter-metal dielectric (IMD) layer on a substrate; forming a metal interconnection in the IMD layer; forming a magnetic tunneling junction (MTJ) on the metal interconnection; forming a top electrode on the MTJ; and forming a trapping layer on the top electrode for trapping hydrogen. Preferably, the trapping layer includes a concentration gradient, in which a concentration of hydrogen decreases from a top surface of the top electrode toward the MTJ.

Abstract: A phase change memory (PCM) cell (100) includes a PCM layer (105), a metal ceramic composite material layer (120), and a carbon nitride (CNX) electrode layer (110) disposed between the PCM material layer and the metal ceramic composite material layer. The CNX electrode layer can have an electrical resistivity at room temperature of from about 1 mOhm-cm to about 2000 mOhm-cm and an electrical resistivity at 650° C. of from about 1 mOhm-cm to about 100 mOhm-cm.

Abstract: An interconnect structure according to the present disclosure includes: an interconnect layer containing a metal element as a main component and extending in a direction; a metal layer opposite to the interconnect layer, and a solid electrolyte layer between the interconnect layer and the metal layer. The solid electrolyte layer encloses the interconnect layer at least in a cross-sectional view taken along a plane orthogonal to the direction. The interconnect layer and the metal layer are electrically insulated from each other by the solid electrolyte layer.

Abstract: A resistive switching memory device according to an exemplary embodiment includes: a first electrode; a second electrode formed to be separated from the first electrode; and an insulating layer formed near the first electrode and the second electrode, and changed to one of a high resistance state and a low resistance state when a conductive filament is controlled by a change of external humidity or a voltage applied through the first electrode or the second electrode.

Abstract: An apparatus includes two or more electrically rotatable antennas providing a reconfigurable metasurface, each of the electrically rotatable antennas including a disk of optically tunable material. The apparatus also includes a control circuit including a plurality of switches each coupled to (i) one of a plurality of electrodes, the plurality of electrodes being arranged proximate different portions of at least one surface of each of the disks of optically tunable material and (ii) to at least one of a current source and a ground voltage. The control circuit is configured to modify states of portions of the optically tunable material in each of the disks of optically tunable material utilizing current supplied between at least two of the plurality of electrodes to adjust reflectivity of the portions of the optically tunable material to dynamically reconfigure respective antenna shape configurations of each of the electrically rotatable antennas.

Abstract: A memory device is disclosed. The memory device includes a bottom contact and a memory layer connected to the bottom contact. The memory layer has a variable resistance. The memory device also includes a top electrode on the memory layer, where the top electrode and the memory layer cooperatively form a heterojunction memory structure. The memory device also includes a top contact on the top electrode; and a barrier layer, configured to substantially prevent conduction of ions or vacancies therethrough, wherein the barrier layer has a resistivity less than 1E-4 Ohm-m, where the barrier layer is between one of: A) the top electrode and the top contact, and B) the memory layer and the bottom contact.

Abstract: A semiconductor device includes a first insulation layer, a second insulation layer disposed on the first insulation layer and having an opening on an upper surface of the second insulation layer, a first electrode embedded in the second insulation layer and having an end exposed at the opening, a variable-resistance layer disposed on the first electrode and the second insulation layer in at least one region inside and around the opening, and a second electrode disposed on the variable-resistance layer. The opening and the second electrode are formed in a shape stretched in at least one axial direction.

Abstract: Methods and structures for fabricating a semiconductor device that includes a reduced programming current phase change memory (PCM) are provided. The method includes forming a bottom electrode. The method further includes forming a PCM and forming a conductive bridge filament in a dielectric to serve as a heater for the PCM. The method also includes forming a top electrode.

Abstract: A memory cell can include a chalcogenide material configured in an annular shape or a chalcogenide material substantially circumscribing an interior conductive channel. Such memory cells can be included in memory structures having an interior conductive channel and a plurality of alternating dielectric layers and memory layers oriented along the interior conductive channel. Individual memory layers can include a chalcogenide material substantially circumscribing the interior conductive channel.

Abstract: A method for manufacturing a semiconductor device includes forming a first pattern structure having a first opening on a lower structure comprising a semiconductor substrate. The first pattern structure includes a stacked pattern and a first spacer layer covering at least a side surface of the stacked pattern. A first flowable material layer including a SiOCH material is formed on the first spacer layer to fill the first opening and cover an upper portion of the first pattern structure. A first curing process including supplying a gaseous ammonia catalyst into the first flowable material layer is performed on the first flowable material layer to form a first cured material layer that includes water. A second curing process is performed on the first cured material layer to form a first low-k dielectric material layer. The first low-k dielectric material layer is planarized to form a planarized first low-k dielectric material layer.

Abstract: Methods, systems, and devices for techniques for forming self-aligned memory structures are described. Aspects include etching a layered assembly of materials including a first conductive material and a first sacrificial material to form a first set of channels along a first direction that creates a first set of sections. An insulative material may be deposited within each of the first set of channels and a second sacrificial material may be deposited onto the first set of sections and the insulating material. A second set of channels may be etched into the layered assembly of materials along a second direction that creates a second set of sections, where the second set of channels extend through the first and second sacrificial materials. Insulating material may be deposited in the second set of channels and the sacrificial materials removed leaving a cavity. A memory material may be deposited in the cavity.

Abstract: A method of fabricating a memory device includes forming word lines and cell stacks with gaps between the cell stacks, forming a lower gap-fill insulator in the gaps, forming an upper gap-fill insulator on the lower gap-fill insulator, curing the lower gap-fill insulator and the upper gap-fill insulator to form a gap-fill insulator, and forming bit lines on the cell stacks and the gap-fill insulator. The lower gap-fill process may be performed using a first source gas that includes first and second precursors, and the upper gap-fill process may be performed using a second source gas that includes the first and second precursors, a volume ratio of the first precursor to the second precursor in the first source gas may be greater than 15:1, and a volume ratio of the first precursor to the second precursor in the second source gas may be less than 15:1.

Abstract: The present specification relates to an ink composition including: a compound represented by Formula 1; and a solvent represented by the Formula 2, and a method for manufacturing an organic light emitting device formed by using the ink composition.

Abstract: An apparatus for manufacturing a tension mask-frame assembly includes a frame loading unit configured to load a tension mask-frame assembly, a pressing unit configured to press the support frame, a load cell configured to measure a force applied to the support frame, and a control unit configured to control the pressing unit to pre-deform the support frame in accordance with at least a portion of a bending deformation amount of the support frame, caused by own weight of the support frame and tension of the tension mask. The pressing unit includes inward pressing members which press the pair of support frames toward the inside of the frame, and outward pressing members which press the support frame toward the outside of the frame. The outward pressing members are disposed in a slot formed in a lengthwise direction of the support frame.