Abstract: A method of preparing an engine valve is provided. The method includes hot forging a heat resistant steel at 1,150 to 1,250° C. to mold a valve, aging the molded valve and hollowed-out processing the aging valve. Additionally, the method includes nitride-heating the hollow valve and grinding a surface of a neck of the nitride-heated valve to remove a nitride layer.

Abstract: A process of producing a fine-grained austenitic stainless steel, the process comprising a step of subjecting a fine-grained austenitic stainless steel comprising: C: 0.15 wt % or less, Si: 1.00 wt % or less, Mn: 2.0 wt % or less, Ni: 6.0 to 14.0 wt %, Cr: 16.0 to 22.0 wt %, and Mo: 3.0 wt % or less, with the balance being Fe and inevitable impurities, and having an average grain size of 10 ?m or lower, to an annealing treatment at a temperature from 600° C. to 700° C. for 48 hours or longer.

Abstract: A method for producing a high-strength hot-dip galvannealed steel sheet, in which a high-strength steel sheet is used as a base material, includes a rolling step (x) of rolling a hot-dip galvannealed steel sheet with a coating layer having an Fe concentration of 8% to 17% by mass, and a heat treatment step (y) of heating the coated steel sheet which has been subjected to the rolling step (x) under the conditions satisfying the following formulae (1) and (2): (273+T)×(20+2×log10(t))?8000??(1) 40?T?160??(2) where T: heating temperature (° C.) of the coated steel sheet, and t: holding time (hr) at the heating temperature T.

Abstract: An Al—Mg-based or Al—Mg—Si-based or Al—Zn-based or Al—Si-based starting material in the form of a powder or wire for an additive manufacturing process, the use thereof, and an additive manufacturing process using this starting material are disclosed.

Abstract: The present disclosure provides a manufacturing method of an aluminum alloy composition. The manufacturing method includes the following steps in the sequence set forth: (S1) providing an aluminum master alloy, wherein the aluminum master alloy comprises aluminum and copper; (S2) adding chromium to the aluminum master alloy and performing a first melting; (S3) adding a tantalum-chromium alloy and performing a second melting; and (S4) adding silver and performing a third melting to form the aluminum alloy composition.

Abstract: The present invention relates to a flat steel product which has good deep-drawing ability, low edge-crack sensitivity and good bending behaviour. To this end, the flat steel product contains a steel which consists of (in wt %) 0.1-0.5% C, 1.0-3.0% Mn, 0.9-1.5% Si, up to 1.5% Al, up to 0.008% N, up to 0.020% P, up to 0.005% S, 0.01-1% Cr and optionally one or more of the following elements: up to 0.2% Mo, up to 0.01% B, up to 0.5% Cu, up to 0.5% Ni and optionally a total of 0.005-0.2% microalloying elements, the remainder being iron and unavoidable impurities, wherein 75<(Mn2+55*Cr)/Cr<3000 where Mn is the Mn content of the steel in wt % and Cr is the Cr content of the steel in wt %. The steel has a structure which consists of at least 80 area % martensite, of which at least 75 area % is tempered martensite and at most 25 area % is non-tempered martensite, at least 5 volume % residual austenite, 0.

Abstract: A method comprises providing a molten aluminum alloy selected from the group consisting of 6000 series aluminum alloys comprises chromium (Cr) in a range of between 0.001 wt % to 0.05 wt %. The molten aluminum alloy is formed into a formed body having beta-AlFeSi particles. The formed body is solution heat treated at a temperature in a range of 1,025-1,050° F. to form a heat-treated body. The solution heat treating transforms substantially all of the beta-AlFeSi particles into alpha-AlFeSi particles such that the heat-treated body is substantially free of the beta-AlFeSi particles.

Abstract: A web coating platform for depositing molten metal on flexible substrates is provided. The web coating platform can be used for manufacturing solid lithium anodes for use in energy storage devices, for example, rechargeable batteries. The coating platform can be designed for double-sided coating of a continuous flexible substrate (e.g., a copper foil) with molten lithium followed by double-sided lamination or passivation. The coating platform integrates novel coating elements unique to handling and processing molten metals. For example, some implementations of the present disclosure incorporate double-sided molten metal coating elements, which include at least one of a molten metal application assembly (e.g., kiss roller, slot-die, Meyer bar, and/or gravure roller), a primary melt pool assembly, a secondary melt pool assembly, and an engagement mechanism.

Abstract: A web coating platform for depositing molten metal on flexible substrates is provided. The web coating platform can be used for manufacturing solid lithium anodes for use in energy storage devices, for example, rechargeable batteries. The coating platform can be designed for double-sided coating of a continuous flexible substrate (e.g., a copper foil) with molten lithium followed by double-sided lamination or passivation. The coating platform integrates novel coating elements unique to handling and processing molten metals. For example, some implementations of the present disclosure incorporate double-sided molten metal coating elements, which include at least one of a molten metal application assembly (e.g., kiss roller, slot-die, Meyer bar, and/or gravure roller), a primary melt pool assembly, a secondary melt pool assembly, and an engagement mechanism.

Abstract: An installation for continuous hot-dip coating of a metal strip is provided. The installation includes a tank containing a bath of molten metal, a metal strip running through the bath and a confined wiping device. The confined wiping device includes at least two wiping nozzles placed on each side of a path of the strip after the strip has left the bath of molten metal. Each nozzle has at least one gas outlet orifice and an upper face. The confined wiping device also includes a confinement box adjacent each upper face. The confinement boxes are open on a face which faces the strip. Each box includes at least one upper part and two lateral parts.

Abstract: An abrasive coating for a substrate including a metallic based bond coat layer; a top layer; and an intermediate layer between the metallic based bond coat layer and the top layer. A method of applying an abrasive coating including applying a metallic based bond coat layer onto a substrate; grading an intermediate layer into the metallic based bond coat layer to form a graded transition between the metallic based bond coat layer and the intermediate layer; and grading a top layer into the intermediate layer to form a graded transition between the intermediate layer and the top layer.

Abstract: There are provided a Ni-based thermal spraying alloy powder having excellent corrosion resistance and erosion-corrosion resistance even in an environment in which corrosion acts or corrosion and erosion act simultaneously, and a method for manufacturing an alloy coating. A Ni-based thermal spraying alloy powder comprising Cr: 15 wt % or more and 25 wt % or less, Mo: 0 wt % or more and 5 wt % or less, Si: 0.5 wt % or more and less than 2 wt %, Fe: 5 wt % or less, C: 0.3 wt % or more and 0.7 wt % or less, and B: 4 wt % or more and 7 wt % or less, with the balance being Ni and incidental impurities.

Abstract: A MgO layer is formed using a process flow wherein a Mg layer is deposited at a temperature <200° C. on a substrate, and then an anneal between 200° C. and 900° C., and preferably from 200° C. and 400° C., is performed so that a Mg vapor pressure >10?6 Torr is reached and a substantial portion of the Mg layer sublimes and leaves a Mg monolayer. After an oxidation between ?223° C. and 900° C., a MgO monolayer is produced where the Mg:O ratio is exactly 1:1 thereby avoiding underoxidized or overoxidized states associated with film defects. The process flow may be repeated one or more times to yield a desired thickness and resistance×area value when the MgO is a tunnel barrier or Hk enhancing layer. Moreover, a doping element (M) may be added during Mg deposition to modify the conductivity and band structure in the resulting MgMO layer.

Abstract: A method of manufacturing a display apparatus includes: sequentially fixing a display substrate and a mask assembly to a carrier; transporting the mask assembly and the display substrate to a deposition unit via the carrier; and depositing a deposition material on the display substrate by passing the deposition material through the mask assembly, by using the deposition unit.

Abstract: Provided are a method of manufacturing a mask that has a high precision configured to minimize a shadow effect, and a method of manufacturing a display device. The method of manufacturing a mask includes: tensioning a mask sheet; bonding the mask sheet that is tensioned to a mask frame; and forming an opening in the mask sheet by irradiating laser light on the mask sheet such that an inner wall of the opening has a slope with respect to a surface of the mask sheet.

Abstract: As described above, one or more aspects of the present disclosure provide articles having structural color, and methods of making articles having structural color.

Abstract: The present disclosure discloses an apparatus. The apparatus according to the present disclosure may include a communication interface, one or more memories, and one or more processors. The one or more processors may be configured to: control the thin-film deposition devices to execute the thin-film deposition process by accessing the memory and executing a recipe; obtain in-process thin-film state data of the thin film from the thin-film measurement result received via the communication interface during the thin-film deposition process; and derive post-process thin-film state data of the thin film from the process condition data, the sensing data, and the in-process thin-film state data using a first correlation model.

Abstract: A vacuum lock for a vacuum coating plant comprises a chamber for receiving a substrate carrier, wherein the chamber comprises a first and a second inner surface. A conveyor is configured for conveying the substrate carrier. The vacuum lock comprises a flow channel assembly for evacuating and venting the chamber, the flow channel assembly being configured to cause a gas flow between both the first inner surface and a first substrate carrier surface facing the first inner surface and between the second inner surface and a second substrate carrier surface facing the second inner surface. The substrate carrier can be positioned between the first and the second inner surfaces such that a ratio of a first distance between the first inner surface and the first substrate carrier surface to a length (L) of the substrate carrier is smaller than 0.1, and a ratio of a second distance between the second inner surface and the second substrate carrier surface to a length (L) of the substrate carrier is smaller than 0.1.

Abstract: The present disclosure relates to a method and device for decreasing generation of surface oxide of aluminum nitride. In a physical vapor deposition process, the aluminum nitride is deposited on a substrate in a deposition chamber to form an aluminum nitride coated substrate. A cooling chamber and a cooling load lock module respectively perform a first stage cooling and a second stage cooling on the aluminum nitride coated substrate in vacuum environments, so as to prevent the aluminum nitride coated substrate with the high temperature from being exposed in an atmosphere environment to generate the surface oxide. The method and device for decreasing the generation of the surface oxide of the aluminum nitride can further eliminate crystal defects caused by that gallium nitride is deposited on the surface oxide of the aluminum nitride in the next process.

Abstract: Methods of removing native oxide layers and depositing dielectric layers having a controlled number of active sites on MEMS devices for biological applications are disclosed. In one aspect, a method includes removing a native oxide layer from a surface of the substrate by exposing the substrate to one or more ligands in vapor phase to volatize the native oxide layer and then thermally desorbing or otherwise etching the volatized native oxide layer. In another aspect, a method includes depositing a dielectric layer selected to provide a controlled number of active sites on the surface of the substrate. In yet another aspect, a method includes both removing a native oxide layer from a surface of the substrate by exposing the substrate to one or more ligands and depositing a dielectric layer selected to provide a controlled number of active sites on the surface of the substrate.

Abstract: A film forming method includes: preparing a substrate having a metal layer formed on a surface of a first region and an insulating layer formed on a surface of a second region, wherein the metal layer is formed of a first metal; forming a self-assembled film on a surface of the metal layer by supplying a source gas of the self-assembled film; after forming the self-assembled film, forming an oxide film of a second metal on the insulating layer through an atomic layer deposition method by repeating a supply of a precursor gas containing the second metal and a supply of an oxidizing gas; and reducing an oxide film of the first metal formed on a surface of the first metal by supplying a reducing gas after the supply of the oxidizing gas and before the supply of the precursor gas.

Abstract: A method of forming a film on a substrate is disclosed. The method comprises: heating a thiodisilane according to formula (I) (R1aR1bR1cCS)s(R22N)n(Si—Si)XxHh (I) in a chemical vapor deposition (CVD) or atomic layer deposition (ALD) process under thermal or plasma conditions to give a silicon-containing film disposed on the substrate, wherein: subscript s, n, x, h and R1a, R1b, R1c, R22, and X are as described herein.

Abstract: Apparatus for processing a substrate are provided herein. In some embodiments a showerhead assembly includes a gas distribution plate having a plurality of apertures; a holder having a wall, an radially inwardly extending flange extending from a lower portion of the wall and coupled to the gas distribution plate, and a radially outwardly extending flange extending from an upper portion of the wall, wherein the wall has a thickness between about 0.015 inches and about 0.2 inches; and a heating apparatus disposed above and spaced apart from the gas distribution plate, wherein the heating apparatus includes a heater configured to heat the gas distribution plate.

Abstract: The present disclosure relates to a lid assembly apparatus and related methods for substrate processing chambers. In one implementation, a lid assembly includes a gas manifold. The gas manifold includes a first gas channel configured to receive a process gas, a second gas channel configured to receive a doping gas, and a third gas channel configured to receive a cleaning gas. The lid assembly also includes a showerhead. The showerhead includes one or more first gas openings that are configured to receive the process gas, and one or more second gas openings that are configured to receive the doping gas.

Abstract: A deposition chamber includes a vacuum enclosure, an electrostatic chuck having a flat top surface located within a vacuum enclosure, a lift-and-rotation unit extending through or laterally surrounding the electrostatic chuck at a position that is laterally offset from a vertical axis passing through a geometrical center of the electrostatic chuck, a gas supply manifold configured to provide influx of gas into the vacuum enclosure, and a pumping port connected to the vacuum enclosure.

Abstract: The present disclosure is a wafer support, which includes a heating unit, an insulating-and-heat-conducting unit and a conduct portion, wherein the insulating-and-heat-conducting unit is positioned between the conduct portion and the heating unit. During a deposition process, an AC bias is formed on the conduct portion to attract a plasma disposed thereabove. The heating unit includes at least one heating coil, wherein the heating coil heats the wafer supported by the wafer support via the insulating-and-heat-conducting unit and the conduct portion. The insulating-and-heat-conducting unit electrically insulates the heating unit and the conduct portion to prevent the AC flowing in the heating coil and the AC bias on the conduct portion from conducting each other, so the wafer support can generate a stable AC bias and temperature to facilitate forming an evenly-distributed thin film on the wafer supported by the wafer support.

Abstract: According to an aspect of the present disclosure, a substrate state determining apparatus includes: an image capturing unit that captures an image of a substrate placed on a stage; a learning unit that executes a machine learning using training data in which information indicating a state of the substrate is attached to the image of the substrate, so as to generate a substrate state determination model in which the image of the substrate is taken as an input and a value related to the state of the substrate corresponding to the image of the substrate is taken as an output; and a determination unit that determines the state of the substrate corresponding to the image of the substrate captured by the image capturing unit, using the substrate state determination model generated by the learning unit.

Abstract: Disclosed is a method for manufacturing free-standing cladding tubes with multi-layer structures. According to the method, a cylindrical mandrel substrate defining a hollow cylindrical inner space is provided. A first cold spray powder metal is selected. The cylindrical mandrel substrate is rotated and the first cold spray powder metal is applied to an outer surface of the cylindrical mandrel substrate to form a first layer. The cylindrical mandrel substrate is removed.

Abstract: A Sn-plated steel sheet including a base plated steel sheet having a steel sheet, a Sn-plated layer on at least one surface of the steel sheet, and a film layer containing a zirconium oxide and a tin oxide. An adhesion amount of Sn per surface of the Sn-plated steel sheet is 0.1 g/m2 or more and 15 g/m2 or less, an amount of the zirconium oxide in the film layer is in a range of 1 mg/m2 or more and 30 mg/m2 or less in terms of an amount of metal Zr, a peak position of a binding energy of Sn3d5/2 of the tin oxide is 1.4 eV or more and less than 1.6 eV from a peak position of a binding energy of metal Sn, and a quantity of electricity required for reduction of the tin oxide is more than 5.0 mC/cm2 and 20 mC/cm2 or less.

Abstract: A corrosion protection device, system, and method are provided. The device may operate while being coupled to the object being protected and to a power source using a total of only two terminals. This may be accomplished by de-referencing the return path node of the circuit using a choke device that blocks a temporal AC component of an anti-corrosion signal. The choke device therefore diverts the anti-corrosion signal to a single negative/ground path to the object and then returns through a positive lead of the circuit. A two terminal corrosion protection device may thereby simplify the installation process, for example on a vehicle, by not requiring that another connection be made to the object at a spaced apart location from a first connection to the object.

Abstract: In this disclosure, a process of recycling acid, base and the salt reagents required in the Li recovery process is introduced. A membrane electrolysis cell which incorporates an oxygen depolarized cathode is implemented to generate the required chemicals onsite. The system can utilize a portion of the salar brine or other lithium-containing brine or solid waste to generate hydrochloric or sulfuric acid, sodium hydroxide and carbonate salts. Simultaneous generation of acid and base allows for taking advantage of both chemicals during the conventional Li recovery from brines and mineral rocks. The desalinated water can also be used for the washing steps on the recovery process or returned into the evaporation ponds. The method also can be used for the direct conversion of lithium salts to the high value LiOH product. The method does not produce any solid effluent which makes it easy-to-adopt for use in existing industrial Li recovery plants.

Abstract: Methods, apparatuses, and systems related to the electrochemical separation of target gases from gas mixtures are provided. In some cases, a target gas such as carbon dioxide is captured and optionally released using an electrochemical cell (e.g., by bonding to an electroactive species in a reduced state). Some embodiments are particularly useful for selectively capturing the target gas while reacting with little to no oxygen gas that may be present in the gas mixture. Some such embodiments may be useful in applications involving separations from gas mixtures having relatively low concentrations of the target gas, such as direct air capture and ventilated air treatment.

Abstract: An electrochemical hydrogen compressor includes: a cell including a proton conductive electrolyte membrane having a pair of principal surfaces, a cathode disposed on a first one of the principal surfaces of the electrolyte membrane, and an anode disposed on a second one of the principal surfaces of the electrolyte membrane; a voltage applicator that applies a voltage between the anode and the cathode; a dew point adjuster that adjusts a dew point of a hydrogen-containing gas to be supplied to the anode; and a controller that, when the temperature of the cell increases, controls the dew point adjuster to increase the dew point of the hydrogen-containing gas.

Abstract: An ion source and ion recycle module includes an electrolyte reservoir, an eluent recovery chamber, and an ion exchange connector. The electrolyte reservoir includes a chamber containing an aqueous electrolyte solution including an electrolyte having a chamber inlet and a chamber outlet, and a first electrode. The chamber inlet is fluidically connected to a source chamber of an electrolytic eluent generator and configured to receive depleted electrolyte solution from the source chamber of the electrolytic eluent generator. The chamber outlet is fluidically connected to the source chamber of the electrolytic eluent generator and configured to provide recycled electrolyte solution to the electrolytic eluent generator source chamber. The eluent recovery chamber including a second electrode and configured to receive an eluent solution including eluent counter ions from the eluent generator; and the ion exchange connector including an ion exchange membrane stack.

Abstract: Methods for fabricating dendritic structures and tags include introducing an electrolyte material onto a substrate, into a substrate, or both onto and into a substrate, and applying an electrical potential to at least one pair of electrodes positioned on the substrate to form one or more dendritic structures on the substrate.

Abstract: An electrochemical plating (ECP) system is provided. The ECP system includes an ECP cell comprising a plating solution for an ECP process, a sensor configured to in situ measure an interface resistance between a plated metal and an electrolyte in the plating solution as the ECP process continues, a plating solution supply system in fluid communication with the ECP cell and configured to supply the plating solution to the ECP cell, and a control system operably coupled to the ECP cell, the sensor and the plating solution supply system. The control system is configured to compare the interface resistance with a threshold resistance and to adjust a composition of the plating solution in response to the interface resistance being below the threshold resistance.

Abstract: There is provided a method of plating comprising: a process of bringing a sealing portion of a seal provided to prevent a contact of a substrate holder that holds a substrate from coming into contact with a plating solution, into contact with pure water; and a process of detecting a leak of the seal, based on presence or absence of a short circuit of a leak detection electrode placed inside of the substrate holder after the sealing portion is brought into contact with the pure water and before the substrate is brought into contact with a chemical solution.

Abstract: A wafer plating fixture for use in simultaneously electroplating a two substrates. The wafer plating fixture including: an electrically conductive carrier bus; a plurality of contact clips electrically coupled to the carrier bus and configured to hold the two substrates in place and electrically couple the two substrates to the carrier bus; and a non-conductive substrate backer to separate the two substrates coupled to the carrier bus. A method of electroplating a plurality of substrates. The method including: mounting two substrates to be plated onto a wafer plating fixture; mounting the wafer plating fixture on a continuous belt of plating system; dipping the wafer plating fixture with the two substrates held thereon into an electroplating bath; and applying a voltage to the two substrates via the wafer plating fixture.

Abstract: A crucible-supporting pedestal includes a fitting recess portion into which a divided graphite member is fittable. An opening edge of the fitting recess portion is formed such that a contact area between the opening edge and the divided graphite member is provided at a position higher than a surface of a solidified product of a silicon melt which remains in a quartz crucible after a silicon single crystal is grown, and a force, which is applied to the divided graphite member by an expansion of the silicon melt when the silicon melt is solidified, is applied to a position lower than the contact area.

Abstract: An apparatus pulls a single crystal of semiconductor material by the Czochralski (CZ) method from a melt. The apparatus includes: a crucible that accommodates the melt; a resistance heater around the crucible; a camera system for observing a phase boundary between the melt and a growing single crystal, the camera system having an optical axis; a heat shield in frustoconical form with a narrowing diameter in a region at its lower end and arranged above the crucible and surrounding the growing single crystal; and an annular element, which is configured to capture particles, that projects inward from an inner side face of the heat shield and has an arrestor edge directed upward at an inner end of the annular element. The optical axis of the camera system runs between the arrestor edge and the growing single crystal. The annular element is releasably connected to the heat shield.

Abstract: A preheat ring (126) for use in a chemical vapor deposition system includes a first portion and a second portion selectively coupled to the first portion such that the first and second portions combine to form an opening configured to receive a susceptor therein. Each of the first and second portions is independently moveable with respect to each other.

Abstract: A vapor phase epitaxy method of growing a III-V layer with a doping that changes from a first conductivity type to a second conductivity type on a surface of a substrate or a preceding layer in a reaction chamber from the vapor phase from an epitaxial gas flow comprising a carrier gas, at least one first precursor for an element from main group III, and at least one second precursor for an element from main group V, wherein when a first growth height is reached, a first initial doping level of the first conductivity type is set by means of a ratio of a first mass flow of the first precursor to a second mass flow of the second precursor, then the first initial doping level is reduced to a second initial doping level of the first or low second conductivity type.

Abstract: A semiconductor wafer including a single crystal doped with a dopant, wherein a resistivity of the wafer is 0.7 m?-cm or less, and wherein a striation height of the wafer is 6 mm or more. The resistivity of the wafer may be 0.8 m?-cm or less, and the striation height may be 13 mm or more. The resistivity of the wafer may be 0.7 m?-cm or less, and the striation may be 22 mm or more. Example features relate to a method of making a semiconductor wafer that includes adding a dopant to a silicon melt, rotationally pulling a crystal from the silicon melt, and applying a magnetic field of 3000 G or more such that the semiconductor wafer has a resistivity that is equal to or less than 0.8 m?-cm and a striation height that is equal to or more than 13 mm.

Abstract: Provided are compositions and methods for preparing and identifying antibodies having CDR3s that vary in sequence and in length from very short to very long which in certain embodiments may bind to a carbohydrate moiety or the active site of an enzyme. Libraries coding for antibodies with the CDR3s are also provided. The libraries can be provided by modifying a pre-existing nucleic acid library.

Abstract: An apparatus with a projection defining first and second openings and a channel between the openings. An interior surface adjacent the channel tapers inwardly from the first opening to the second opening, and a shearing edge is positioned adjacent the second opening. A method of using the apparatus to separate protuberances of a plant from an elongate portion of the plant by pulling the elongate portion through the channel. Another apparatus with first and second counter-rotating rollers. Each roller having alternating projecting portions and valleys and oriented so that projecting portions of one roller are aligned with valleys of the other roller as the rollers rotate. A method of using the rollers to deform an elongate portion of a plant between the projecting portions of one roller and the valleys of the other roller.

Abstract: A spun-blown non-woven web is disclosed which is formed from a plurality of fibers formed from a single polymer having an average fiber diameter ranging from between about 0.5 microns to about 50 microns; a basis weight of at least about 0.5 gsm; a tensile strength, measured in a machine direction, ranging from between about 20 g to about 4,200 g; a ratio of tensile strength, measured in the machine direction, to basis weight of at least about 20:1; and a ratio of percent elongation, measured in the machine direction, to fiber diameter of at least about 15.

Abstract: A method and system for forming composite yarns having selected performance characteristics including cut resistance and/or fire/heat resistance. The composite yarn will include a core of one or more filaments and a fiber bundle wrapped about the core and integrated with one or more additional filaments that help bind the fibers about the core. An additional filament or other composite yarn can be plied together therewith to form the finished composite yarn. The core filament(s) will be selected from cut and/or fire/heat resistant materials, while the fibers of the fiber bundle and the additional filament(s) wrapped about the core can be selected from natural or synthetic fibers or filaments having additional desired properties.

Abstract: Multi-component fibers or filaments that are ribbon shaped are provided having polymer components positioned in a side-by-side fashion. For example, the multi-component fibers may be bicomponent fibers having ribbon shape. The polymer components of the fibers are selected to have differential shrinkage behavior. Nonwovens are also provided that are manufactured from such ribbon shaped multi-component fibers or filaments.

Abstract: A manufacturing method and an apparatus enable high productivity. A method for manufacturing an oxidized fiber bundle includes joining an upstream precursor fiber bundle and a downstream precursor fiber bundle together with a joining fiber bundle, and oxidizing the joined precursor fiber bundles by feeding the joined precursor fiber bundles through an oxidization furnace. The joining includes applying an oiling agent to a joint area of a joining target precursor fiber bundle before joining the joining target precursor fiber bundle and the joining fiber bundle together. A quantity of the oiling agent adhering to the joint area is 0.15 to 0.85 wt %.

Abstract: A device and a method for manufacturing a synthetic yarn, in which at least two yarn plugs (1), (2), (3) are produced by texturing, are placed in a first zone (A) on the cooling surface (6c) of a rotating cooling drum (6), moved to a second zone (B) and form more than one winding (I),(II), in which the yarn plugs are kept in the second zone (B) by a gas stream (FB) on the cooling surface (6c), and in which no gas stream or a less powerful gas stream is generated in an intermediate zone (C) in order to prevent the yarn plugs (1), (2), (3) from leaving the second zone (B).