Abstract: A data storage method, apparatus and system that increase drive capacity, minimize latency, reduce write access time and improve drive lifetime is described in this invention. In one embodiment, the data storage device described here is a composite hard disk drive comprises a number of recording media platters labeled from 1 to n, where n is greater than or equal to 2; wherein there exist two positive integer n1 and n2, where n1 and n2 are between 1 and n; n1 is not equals to n2; wherein the data tracks for the media platters n1 and n2 are written based on one of the following: 1) different RTs; 2) different WAs; or 3) different RTs and different WAs.

Abstract: According to one embodiment, a magnetic reproducing and processing device includes an acquirer and a processor. The acquirer is configured to acquire a first electric signal obtained by reproducing information recorded in a first recording area of a magnetic recording medium by a first reproducing element and a second electric signal obtained by reproducing the information recorded in the first recording area by a second reproducing element. A first sensitivity of the first reproducing element to a magnetic signal recorded on the magnetic recording medium is different from a second sensitivity of the second reproducing element to the magnetic signal. The processor is configured to output a reproduced signal corresponding to the information recorded in the first recording area based on the first electric signal and the second electric signal acquired by the acquirer.

Abstract: According to one embodiment, a disk device includes a recording medium, a magnetic head, a ramp, and an actuator. The recording medium has a recording surface and is rotatable around a first rotation axis. The actuator includes a first portion extending so as to be separated from a second rotation axis and separated from the recording surface as the distance from the second rotation axis increases, holds the magnetic head, and is rotatable around the second rotation axis. A first support is provided on the ramp, extends around the second rotation axis, and can support the first portion so that the magnetic head is separated from the recording surface. A second support is provided on the ramp, is located between the first rotation axis and the first support, is separated from the second rotation axis farther than the first support, and can support the first portion.

Abstract: In a video processing method, a video reverse playback instruction is received. A total video duration of the video and a played duration of the video are obtained in response to the video reverse playback instruction. The video reverse playback instruction indicates that the video is to be played in reverse order. A first reverse playback time point corresponding to the video is determined according to the total video duration and the played duration. Subdata from video data of the video is determined based on a time range indicated by the first reverse playback time point and a pre-loading time threshold. The subdata corresponds to the time range of the video. The subdata is pre-loaded to obtain pre-loaded video data. Further, a first reverse playback video frame corresponding to the first reverse playback time point is obtained from the pre-loaded video data for playback in the reverse order.

Abstract: Embodiments of the disclosure provide a method for generating a dynamic image, an electronic device for the same and a storage medium for the same. The electronic device obtains a video based on a trigger operation. The electronic device obtains images of the video by separating the images an audio data of the video. The images include first images and second images. The electronic device obtains target images by processing the first images. Each of the target images does not contain the target object. The electronic device generates the dynamic image based on the images and the target images.

Abstract: The present disclosure describes techniques of editing a video. The techniques described in the present disclosure comprise converting a to-be-edited video comprising a plurality of frames into an image sequence comprising a plurality of images, wherein a resolution of each image in the image sequence is lower than a resolution of a corresponding frame in the to-be-edited video; generating a script of editing the to-be-edited video based at least in part on selecting and editing at least some of the plurality of images in the image sequence; displaying a preview of editing effects based on the script; and sending the script to a server computing device in response to determining the preview satisfies requirements, wherein the to-be-edited video is processed by the server computing device based on the script of editing the to-be edited video.

Abstract: Systems and methods for autonomous rendering of synchronous media objects are disclosed. The system may obtain unsynchronized media objects from user devices and initialize a media object analysis procedure for each media object by collecting metadata associated with each media object and determine a plurality of labels for each media object based on the collected metadata. Further, the system may execute audio analysis for at least one audio track associated with each media object to determine an audio score. The system may then select a best audio track corresponding to each media object based on the audio scores and create a narrative sequence comprising of media object slots filled with media objects and corresponding best audio tracks for each media object. Furthermore, based on approval of the narrative sequence by a user device, the system may generate a synchronized media object preview for display on the user device.

Abstract: A source video of a scene showing moving objects, undergoing periodic motion in a field of view which may be located in a region of interest, is filtered and processed by constructing a representation such as a frequency spectrum plot of some of the frequencies of motion in the scene or region of interest and enabling a selection of frequency peaks representing one or more pixels in the field of view from which to generate reconstructed waveforms, then applying the reconstructed waveform at each pixel to a reference frame to produce a modified video recording.

Abstract: Systems and methods are described for determining playback points in media assets based on both a keyword and a context of a current playback point in a media asset. For example, in response to user input of a keyword (e.g., “Matt Damon”) while the user is consuming a media asset, a current playback point in the media asset is determined. Context of the media asset at the current playback point is then determined (e.g., the current playback point involves a car chase). Playback points in the media asset are determined that match both the context and the keyword and are presented to the user (e.g., playback points with Matt Damon in a car chase).

Abstract: Systems and methods are provided for reordering and/or bypassing certain informational content or menus that are conventionally presented prior to playback of media content stored on physical media discs. Upon initial use of a physical media disc, certain information content or menus may be presented to a user or viewer, for example, piracy warnings, language selection menus, etc. However, upon subsequent use of the physical media disc, such informational content or menus may be bypassed. The user or viewer is given an option to immediately begin consuming the media content stored on the physical media disc. Conventional content, such as trailers are not played prior to playback of the media content.

Abstract: A mechanical enclosure provides a mechanism for coupling a storage device to a computer system. The mechanical enclosure can be removably coupled to the computer system and can allow for coupling of the storage device to the computer system without using specialty cables and connectors. The mechanical enclosure can allow the storage device to be coupled to computer system without significantly degrading the speed at which the data stored within the storage device is downloaded onto the computer. The storage device can be inserted into the mechanical enclosure which couples the storage device to the mechanical enclosure. The mechanical enclosure can be inserted into the computer system which similarly couples the computer system to the mechanical enclosure to effectively couple the storage device and the computer system.

Abstract: A semiconductor device includes: a memory circuit having a plurality of quadrants arranged at corners of the memory circuit and surrounding a bank control component; wherein a first quadrant of the plurality of quadrants includes a first bit cell core and a first set of input output circuits configured to access the first bit cell core, the first quadrant defined by a rectangular boundary that encloses portions of two perpendicular edges of the memory circuit; wherein a second quadrant of the plurality of quadrants includes a second bit cell core and a second set of input output circuits configured to access the second bit cell core, the second quadrant being adjacent the first quadrant, wherein a border between the first quadrant and the second quadrant defines a first axis about which the first quadrant and the second quadrant are symmetrical.

Abstract: A semiconductor memory device may include a plurality of memory cells wherein identifiers may be provided to the memory cells. The semiconductor memory device may include a first circuit, a second circuit and a power control circuit. The first circuit may include a first power terminal and a second power terminal. The second circuit may include a third terminal and a fourth terminal. The power control circuit may be configured to apply a first power voltage or a ground voltage to the first power terminal and to apply the ground voltage to the second power terminal based on the identifiers.

Abstract: Structures for 3D sense amplifiers for 3D memories are disclosed. A first embodiment uses one type of vertical transistors in constructing 3D sense amplifiers. A second embodiment uses both n- and p-type transistors for 3D sense amplifiers. Either or both of n- and p-type transistors are vertical transistors. The n- and p-type transistors may reside on different levels, or on the same level above a substrate if both are vertical transistors. In any embodiment, different options are available for gate contact formation. In any embodiments and options or alternatives thereof, one or more sense-enable circuits may be used. Sense amplifiers for several bit lines may be staggered on one or both sides of a memory array. Column multiplexers may be used to couple particular bit lines to data outputs. Bit-line multiplexers may be used to couple certain bit lines to shared 3D sense amplifiers.

Abstract: A lateral transfer path within an adjustable-width signaling interface of an integrated circuit component is formed by a chain of logic segments that may be intercoupled in different groups to effect the lateral data transfer required in different interface width configurations, avoiding the need for a dedicated transfer path per width configuration and thereby substantially reducing number of interconnects (and thus the area) required to implement the lateral transfer structure.

Abstract: A memory controller may control a memory device. The memory device may be coupled to the memory controller through a channel. The memory controller may include an idle time monitor and a clock signal generator. The idle time monitor may output an idle time interval of the memory device. The idle time interval may be between an end time of a previous operation of the memory device and a start time of a current operation. The clock signal generator may generate a clock signal based on the idle time interval and output the clock signal to the memory device through the channel to perform a current operation.

Abstract: Methods, systems, and devices for activate commands for memory preparation are described. A memory device may receive an activate command for a row of a memory bank in the memory device. The activate command may include an indicator that indicates a type of an access operation associated with the activate command. The memory device may perform, based on the type of the access operation, an operation to prepare the memory device for the access operation. The memory device may then receive an access command for the access operation after performing the operation to prepare the memory device for the access operation.

Abstract: A memory circuit device includes multiple memory cells that are each constituted of a resistive memory element, a write circuit unit that is configured to write data to any one of the memory cells which is designated by cell designating information, and a read circuit unit that is configured to read out, from the memory cell designated by the cell designating information, data written in the memory cell. The memory circuit device has a configuration including a selection circuit unit that is shared by both of the write circuit unit and the read circuit unit and configured to select a memory cell to be activated from the multiple memory cells based on the cell designating information, and a control circuit unit that is configured to selectively enable any one of writing of data by the write circuit unit and reading of data by the read circuit unit with respect to the memory cell selected by the selection circuit unit.

Abstract: Apparatuses, systems, and methods for sketch circuits for refresh binning. The rows of a memory may have different information retention times. The row addresses may be sorted into different bins based on these information retention times. In order to store information about which row addresses are associated with which bins a sketch circuit may be used. When an address is generated as part of a refresh operation, it may be used to generate a number of different hash values, which may be used to index entries in a storage structure. The entries may indicate which bin the address is associated with. Based on the binning information, the memory may refresh the address at different rates (e.g., by determining whether to provide the address as a refresh address or not).

Abstract: A method for performing a refresh operation based on system characteristics is provided. A The method includes determining that a current operation condition of a memory component is in a first state and detecting a change in the operation condition from the first state to a second state. The method further includes determining a range of the operation condition to which the second state belongs. The method further includes determining a refresh period associated with the range of the operation condition, the refresh period corresponding to a period of time between a first time when a write operation is performed on a segment of the memory component and a second time when a refresh operation is to be performed on the segment. The method further includes performing the refresh operation on the memory component according to the refresh period.

Abstract: A block of dynamic memory in a DRAM device is organized to share a common set of bitlines may be erased/destroyed/randomized by concurrently activating multiple (or all) of the wordlines of the block. The data held in the sense amplifiers and cells of an active wordline may be erased by precharging the sense amplifiers and then writing precharge voltages into the cells of the open row. Rows are selectively configured to either be refreshed or not refreshed. The rows that are not refreshed will, after a time, lose their contents thereby reducing the time interval for attack. An external signal can cause the isolation of a memory device or module and initiation of automatic erasure of the memory contents of the device or module using one of the methods disclosed herein. The trigger for the external signal may be one or more of temperature changes/conditions, loss of power, and/or external commands from a controller.

Abstract: A memory device is provided. The memory device includes a bit cell having a first invertor connected between a first node and a second node and a second invertor connected between the first node and the second node. The first invertor and the second invertor are cross coupled at a first data node and a second data node. The memory device further includes a pull down circuit connected to the second node. The pull down circuit is operative to pull down a voltage of the second node below a ground voltage in response to an enable signal.

Abstract: An apparatus for reading a bit of a memory array includes a bit cell column, voltage enhancement circuitry, and control circuitry. The voltage enhancement circuitry is configured to couple a bitline to a reference node. The control circuitry is configured to, in response to a read request for a bitcell element of a plurality of bitcell elements, couple a current source to the bitcell column such that a read current from the current source flows from the source line, through the bitcell column and the voltage enhancement circuitry, to the reference node and determine a state for the bitcell element based on a voltage between the source line and the reference node. The voltage enhancement circuitry is configured to generate, when the read current flows through the voltage enhancement circuitry, a voltage at the bitline that is greater than a voltage at the reference node.

Abstract: A memory system includes a plurality of first memory units, a plurality of read word lines, and a plurality of read bit lines. Each first memory unit of the plurality of first memory units includes a second memory unit, a first transistor coupled to the second memory unit, and a second transistor coupled to the second memory unit and the first transistor. Each read word line of the plurality of read word lines is coupled to a plurality of first transistors disposed along a corresponding row. Each read bit line of the plurality of read bit lines is coupled to a plurality of second transistors disposed along a corresponding column.

Abstract: An in-memory digital processor, Perpetual Digital Perceptron (PDP), is disclosed. The digital in-memory processor of the invention processes the input digital information according to a database of the digital content data stored/hardwired in the Content Read Only Memory (CROM) array and outputs the correspondent digital response data stored/hardwired in the Response Read Only Memory (RROM) array. The PDP is the hardwired digital in-memory processor without re-configuration capability and similar to the instinct functions of biological hardwired brains without re-shaping their neuromorphic structures from training and learning.

Abstract: Numerous embodiments of analog neural memory arrays are disclosed. In one embodiment, an analog neural memory system comprises an array of non-volatile memory cells, wherein the cells are arranged in rows and columns, the columns arranged in physically adjacent pairs of columns, wherein within each adjacent pair one column in the adjacent pair comprises cells storing W+ values and one column in the adjacent pair comprises cells storing W? values, wherein adjacent cells in the adjacent pair store a differential weight, W, according to the formula W=(W+)?(W?). In another embodiment, an analog neural memory system comprises a first array of non-volatile memory cells storing W+ values and a second array storing W? values.

Abstract: A semiconductor memory device includes a memory block including a plurality of memory cells programmed to a plurality of program states during a program operation, a voltage generator to generate and apply a program voltage and a select line voltage to the memory block during the program operation, and a read and write circuit to temporarily store program data during the program operation and control a potential of bit lines of the memory block based on the temporarily stored program data. The voltage generator generates the select line voltage as a first select line voltage during a first program operation on some program states among the plurality of program states, or as a second select line voltage for which a potential is lower than a potential of the first select line voltage during a second program operation on remaining program states among the plurality of program states.

Abstract: An apparatus, system, and method for controlling data transfer to an output port of a serial data link interface in a semiconductor memory is disclosed. In one example, a flash memory device may have multiple serial data links, multiple memory banks and control input ports that enable the memory device to transfer the serial data to a serial data output port of the memory device. In another example, a flash memory device may have a single serial data link, a single memory bank, a serial data input port, a control input port for receiving output enable signals. The flash memory devices may be cascaded in a daisy-chain configuration using echo signal lines to serially communicate between memory devices.

Abstract: A system and method of storing and reading digital data, including providing a nanopore polymer memory (NPM) device having at least one memory cell comprising at least two addition chambers each arranged to add a unique chemical construct (or codes) to a polymer (or DNA) string when the polymer enters the respective addition chamber, the data comprising a series of codes; successively steering the polymer from deblock chambers through the nanopore into the addition chambers to add codes to the polymer to create the digital data pattern on the polymer; and accurately controlling the bit rate of the polymer using a servo controller. The device may have loading chamber(s) to load (or remove) the polymer into/from the deblock chambers through at least one “micro-hole”. The cell may be part of a memory system that stores and retrieves “raw” data and allows for remote retrieval and conversion. The cell may store multi-bit data having a plurality of states for the codes.

Abstract: A resistance switching RAM logic device is presented. The device includes a pair of resistance switching RAM cells that may be independently programed into at least a low resistance state (LRS) or a high resistance state (HRS). The resistance switching RAM logic device may further include a shared output node electrically connected to the pair of resistance switching RAM cells. A logical output may be determined from the programmed resistance state of each of the resistance switching RAM cells.

Abstract: Embodiments of the disclosure are drawn to apparatuses and methods for content addressable memory (CAM) cells. Each CAM cell may include a comparator portion which stores a bit of information. Each CAM cell may also include a comparator portion, which compares an external bit to the stored bit. A group of CAM cells may be organized into a CAM register, with each CAM cell coupled in common to a signal line. Any of the CAM cells may change a voltage on the signal line if the external bit does not match the stored bit.

Abstract: A semiconductor memory device includes: a memory cell array including a plurality of NAND strings, each of the plurality of NAND strings including a plurality of memory cell transistors connected to each other in series; a plurality of word lines commonly connected to the plurality of memory strings and connected to the plurality of memory cell transistors, respectively; and a row decoder configured to supply a predetermined voltage higher than a ground voltage to each of the plurality of word lines after a program operation for writing data to a selected word line is completed.

Abstract: A semiconductor storage device includes a first memory cell electrically connected to a first bit line and a first word line, a second memory cell electrically connected to a second bit line and the first word line, and a first circuit configured to supply voltages to the first word line. During a reading operation to read a page of memory cells including the first memory cell and the second memory cell, the first circuit supplies a first voltage to the first word line while the first memory cell is selected as a read target during a first time period, and supplies a second voltage greater than the first voltage to the first word line while the second memory cell is selected as a read target during a second time period that is different from the first time period, and directly thereafter, supplies the first voltage to the first word line.

Abstract: A system performs analog memory sanitization by forcing voltage levels in memory cells to substantially the same voltage level so that they are indistinguishable regardless of the data that has been previously stored in the cells. In some embodiments, a special programming operation for sanitizing a plurality of memory cells forces the charge in the cells to approximately the same voltage level by increasing the voltage level of all cells regardless of the data currently stored in the cells. As an example, each cell may be programmed to a logical high bit value (e.g., a “0”) by increasing the charge in each cell to a voltage level that is greater than the voltage level for writing the same logical bit value in a normal programming operation. Thus, after the programming operation is performed, the voltage levels of cells storing one logical bit value (e.g., a “0”) prior to the programming operation may be indistinguishable from voltage levels of cells storing a different logical bit value (e.g.

Abstract: A memory device includes: a plurality of memory cells grouped into a plurality of planes; page buffer groups corresponding to respective ones of the plurality of planes, the page buffer groups including a plurality of page buffer circuits, each of the plurality of page buffer circuits including cache latches which are configured to receive data to be stored in memory cells in the plurality of planes; and control logic for controlling the page buffer groups to simultaneously initialize cache latches corresponding to at least two planes, among the cache latches, in response to a multi-plane program command, wherein the multi-plane program command instructs a multi-plane program operation of simultaneously storing data in plural planes among the plurality of planes.

Abstract: A memory device includes a memory cell region including a first metal pad, a peripheral circuit region including a second metal pad and vertically connected to the memory cell region by the first and second metal pads, a memory cell array in the memory cell region including cell strings including memory cells, word lines respectively connected to the memory cells, bit lines connected to one side of the cell strings, and a ground selection line connected to the cell strings, a control logic in the peripheral circuit region including a precharge control circuit for controlling precharge on partial cell strings among the cell strings and controlling a plurality of data program steps on the memory cells, and a row decoder in the peripheral circuit region for activating at least some of the word lines in response to a control of the control logic.

Abstract: Devices and techniques for programmable atomic operator resource locking are described herein. A request for a programmable atomic operator (PAO) can be received at a memory controller that includes a programmable atomic unit (PAU). Here, the request includes an identifier for the PAO and a memory address. The memory addressed is processed to identify a lock value. A verification can be performed to determine that the lock value indicates that there is no lock corresponding to the memory address. Then, the lock value is set to indicate that there is now a lock corresponding to the memory address and the PAO is invoked based on the identifier for the PAO. In response to completion of the PAO, the lock value is set to indicate that there is no longer a lock corresponding to the memory address.

Abstract: A first logical page type and a second logical page type each comprising a plurality of programming distributions of a memory device are identified. A determination is made that the bit error rate (BER) for the first logical page type is less than a BER for the second logical page type. A set of rules corresponding to a determination that the BER for the first logical page type is less than the BER for the second logical page type is identified. A program targeting rule of the set of rules is determined based on a valley between an erase distribution and a programming distribution adjacent to the erase distribution having a lowest valley margin of a plurality of valley margins corresponding to the plurality of programming distributions of the memory device. Based on the program targeting rule, a program targeting operation is performed to adjust a voltage associated with one or more programming distributions of the memory device.

Abstract: In a memory controller for controlling a memory device including a memory block coupled to a plurality of word lines, the memory block including a plurality of memory cells respectively coupled to the plurality of word lines, the memory controller comprising: an operating time calculator configured to calculate program operating times taken to perform a program operation on the memory cells respectively coupled to the plurality of word lines; and an operating voltage determiner configured to determine an erase voltage to be used to erase a memory block by comparing a first program operating time, among the program operating times calculated by the operating time calculator, with the other program operating times, except the first program operating time, among the program operating times.

Abstract: A memory device includes bit lines coupled to a memory block, a page buffer group selecting the bit lines in response to page buffer signals, applying a precharge voltage to selected bit lines from among the bit lines, and applying a ground voltage to unselected bit lines during a program verify operation, and a page buffer controller outputting the page buffer signals to selectively apply the precharge voltage to the bit lines according to an order of read operations on a logical page during the program verify operation.

Abstract: A nonvolatile memory device includes a memory cell array including memory cells and a page buffer circuit. The page buffer circuit includes page buffer units and cache latches. The cache latches are spaced apart from the page buffer units in a first horizontal direction, and correspond to respective ones of the plurality of page buffer units. Each of the page buffer units includes a pass transistor connected to each sensing node and driven in response to a pass control signal. The page buffer circuit being configured to perform a data transfer operation, based on performing a first data output operation to output data, provided from a first portion of page buffer units, from a first portion of cache latches to a data input/output (I/O) line, the data transfer operation configured to dump sensed data from a second portion of page buffer units to a second portion of cache latches.

Abstract: Memory devices might include a capacitor, a first capacitance element, a first transistor, and control logic. The first transistor might be connected between the capacitor and the first capacitance element. The control logic might be connected to a control gate of the first transistor. The control logic might be configured to activate the first transistor to precharge the capacitor and the first capacitance element during a read operation of the memory device. The first capacitance element might be a wire capacitance of a first signal line.

Abstract: The present technology relates to an electronic device. A memory device configured to perform a sensing operation based on a charge degree of a sensing node includes a memory cell array including a plurality of memory cells, a peripheral circuit including a page buffer connected to a selected memory cell among the plurality of memory cells through a bit line, and configured to perform a sensing operation on the selected memory cell, and control logic configured to control the peripheral circuit to precharge a source line among lines connected to the memory cell array and perform the sensing operation based on a degree at which a sensing node in the page buffer is charged, during the sensing operation.

Abstract: An operation method for a memory device is provided. The operation method includes: increasing a dummy word line voltage to a first dummy word line voltage during a pre-tum on period; increasing the dummy word line voltage from the first dummy word line voltage to a second dummy word line voltage during a read period; and lowering the dummy word line voltage after the read period is finished. Wherein the first dummy word line voltage is lower than the second dummy word line voltage.

Abstract: A semiconductor memory device includes a plurality of memory banks including a first memory bank group including a computation circuit and a second memory bank group without a computation circuit; and a control circuit configured to control a PIM operation by the first memory bank group to be performed together with processing of memory requests for the plurality of memory banks while satisfying a maximum power consumption condition of the semiconductor memory device.

Abstract: A semiconductor integrated circuit includes: a first circuit, a second circuit, a third circuit, and a first switch circuit. The first circuit is configured to output a first signal. The second circuit is configured to output a second signal different from the first signal. The third circuit is configured to output a third signal corresponding to either the first signal or the second signal. The first switch circuit is configured to output the third signal to the first circuit in a case that the first circuit outputs the first signal. The first switch circuit is configured to output the third signal to the second circuit in a case that the second circuit outputs the second signal.

Abstract: A method for conducting a read-verification operation on a target memory cell in a three-dimensional (3D) memory device includes removing fast charges of the target memory cell at a read-prepare step and measuring a threshold voltage of the target memory cell at a sensing step. Removing the fast charges of the target memory cell includes applying a prepare voltage (Vprepare) on an unselected top select gate (Unsel_TSG) of an unselected memory string, applying a first off voltage (Voff) on a selected word line (Sel_WL) associated with the target memory cell, and applying a pass voltage (Vpass) on an unselected word line (Unsel_WL).

Abstract: Technology is disclosed for an efficient read NAND memory cells while mitigating read disturb. In an aspect, a read sequence includes a read spike that removes residual electrons from the NAND channels, followed by reading multiple different groups of memory cells, followed by a channel clean operation. The read spike and channel clean mitigate read disturb. The read spike and channel clean each take a significant amount of time to perform. However, since multiple groups of memory cells are read between the read spike and channel clean this time is essentially spread over the reading of multiple groups, thereby improving the average time to read a single group of memory cells. In one aspect, reading the multiple different groups of memory cells includes reading one or more pages from each of the groups of memory cells. In one aspect, each group is in a different sub-block.

Abstract: Provided herein may be a memory device and a method of operating the memory device. The memory device includes an operation code generator configured to generate a program code and a verify code in response to a program control code and to output an operation code using the program code and the verify code, a verify counter configured to store a count value acquired by counting the number of verify operations that are performed depending on the verify code, a verify determiner configured to compare the count value with a reference value depending on the result of the verify operation and to generate the program control code to change a step voltage for raising a program voltage depending on the comparison result, and a voltage generator configured to generate the program voltage and a verify voltage depending on the operation code.

Abstract: Memory devices might include an array of memory cells and a controller configured to access the array of memory cells. The controller may sense a first threshold voltage of the selected memory cell. In response to the sensed first threshold voltage being between a first pre-program verify level and a first program verify level, the controller may bias the selected memory cell for SSPC programming. The first pre-program verify level might be less than a final pre-program verify level and the first program verify level might be less than a final program verify level. In response to the sensed first threshold voltage being less than the first pre-program verify level, the controller may bias the selected memory cell for non-SSPC programming. In response to the sensed first threshold voltage being greater than the first program verify level, the controller may inhibit programming of the selected memory cell.