Abstract: The present disclosure includes apparatuses, methods, and systems for three-state programming of memory cells. An embodiment includes a memory having a plurality of memory cells, and circuitry configured to program a memory cell of the plurality of memory cells to one of three possible data states by applying a voltage pulse to the memory cell, determining whether the memory cell snaps back in response to the applied voltage pulse, and applying an additional voltage pulse to the memory cell based on the determination of whether the memory cell snaps back.

Abstract: An apparatus (e.g., a content addressable memory system) can have a controller; a first content addressable memory coupled to the controller and a second content addressable memory coupled to the controller. The controller can be configured to cause the first content addressable memory to compare input data to first data stored in the first content addressable memory and cause the second content addressable memory to compare the input data to second data stored in the second content addressable memory such the input data is compared to the first and second data concurrently and replace a result of the comparison of the input data to the first data with a result of the comparison of the input data to the second data in response to determining that the first data is invalid and that the second data corresponds to the first data.

Abstract: A memory device includes a string of series-connected memory cells, a data line, a first select transistor, a common source, a second select transistor, and a gate leakage transistor. The string of series-connected memory cells includes a vertical channel region. Each memory cell of the string of series-connected memory cells includes a first gate stack structure. The data line is connected to the vertical channel region. The first select transistor is connected between the data line and the string of series-connected memory cells. The second select transistor is connected between the common source and the string of series-connected memory cells. The gate leakage transistor is connected between the first select transistor and the second select transistor. The gate leakage transistor includes a second gate stack structure different from the first gate stack structure.

Abstract: A semiconductor device, the device including: a first level including a plurality of first memory arrays, where the first level includes a plurality of first transistors and a plurality of first metal layers; a second level disposed on top of the first level, where the second level includes a plurality of second memory arrays; a third level disposed on top of the second level, where the third level includes a plurality of third transistors and a plurality of third metal layers, where the third level is bonded to the second level, where the bonded includes oxide to oxide bonding regions and a plurality of metal to metal bonding regions, where the first level includes first filled holes, where the second level includes second filled holes, and where the third level includes a plurality of decoder circuits.

Abstract: Apparatuses and methods for decoding addresses for memory are disclosed. An example apparatus includes a memory cell array and a row decoder. The memory cell array includes a bank of memory including a plurality of groups of memory. Each of the groups of memory includes sections of memory, and each of the sections of memory including memory cells arranged in rows and columns of memory. The row decoder decodes addresses to access a first group of memory to include rows of prime memory from a first block of memory and to include rows of prime memory from a second block of memory. The row decoder decodes the addresses to access a second group of memory to include rows of prime memory from the second block of memory and to include rows of redundant memory. The rows of redundant memory are shared with the first and second blocks of memory.

Abstract: According to an embodiment, a semiconductor memory device includes a memory cell, a first word line coupled between a control end of the memory cell and a first node, a resistance element coupled between the first node and a second node, a control circuit configured to output a voltage to the second node, a first switch coupled between the first node and a third node, a second switch coupled between the second node and the third node, and a comparator including an input end that receives a signal corresponding to a voltage of the third node.

Abstract: A nonvolatile memory device includes a memory cell array, a voltage generator and a control logic circuit for programming a selected memory cell of the memory cell array to a selected word line into a first program state by controlling the voltage generator and a verify operation on the memory cell array. The control logic circuit controls a first word line voltage applied to an adjacent word line not to be programmed in the verify operation to be different from a read voltage level of a read voltage applied in a read operation of the nonvolatile memory and controls a bit line voltage applied to a bit line in the read operation. The control logic circuit controls the voltage generator to apply a plurality of different and decreasing verify voltages to the selected word line in the verify operation.

Abstract: A command to program data to a memory device is received. Target charge levels of a set of memory cells in the memory device for a first programming step are determined based on the data. A first set of indicators are provided to the memory device. The first set of indicators indicate the target charge levels for the first programming step. Target charge levels of the set of memory cells for a second programming step are determined based on the data. A second set of indicators are provided to the memory device. The second set of indicators indicate the target charge levels for the second programming step.

Abstract: According to one embodiment, a memory system includes a nonvolatile semiconductor memory, and a controller. The semiconductor memory includes a memory cell, and a write circuit configured to write data to the memory cell by applying a program voltage to the memory cell and comparing a threshold voltage of the memory cell with a first reference voltage corresponding to the write data. The write circuit is configured to execute a first programming operation to obtain a value of a write parameter by comparing the threshold voltage with a second reference voltage different from the first reference voltage.

Abstract: A semiconductor storage device in an embodiment includes a plurality of planes each including a memory cell array, a voltage generation circuit configured to apply a first intermediate voltage to an adjacent word line adjacent to a selected word line in a former half of a program period and apply a second intermediate voltage higher than the first intermediate voltage to the adjacent word line in a latter half of the program period, a discharge circuit configured to feed a discharge current from the selected word line in a period corresponding to a period in which the second intermediate voltage is applied to the adjacent word line, and a control circuit configured to set a discharge characteristic of the discharge circuit according to a number of the planes.

Abstract: A storage device includes a controller configured to control a non-volatile memory device(s) having a plurality of memory blocks therein. The controller includes secure erase control logic configured to: (i) control secure erase operations on the plurality of memory blocks in response to a secure erase request received from a host, and (ii) set flags corresponding to the plurality of memory blocks such that a first flag corresponding to a first memory block, which has undergone at least two of the secure erase operations, has a first value. Adaptive control logic is provided, which is configured to change at least one operating condition associated with a write operation and/or read operation directed at the first memory block, in response to detecting that the first flag has the first value.

Abstract: A nonvolatile memory device includes cell strings commonly connected between bitlines and a source line where the cell strings are grouped into memory blocks. During a precharge period, channels of the cell strings of a selected memory block are precharged by applying a gate induced drain leakage (GIDL) on voltage to gates of GIDL transistors included in the cell strings of the selected memory block where the GIDL on voltage has a voltage level to induce GIDL. During the precharge period, precharge of channels of the cell strings of an unselected memory block are prevented by controlling a gate voltage of GIDL transistors included in the cell strings of the unselected memory block to prevent the GIDL. During a program execution period after the precharge period, memory cells of the selected memory block connected to a selected wordline are programmed by applying a program voltage to the selected wordline.

Abstract: Memory cell sensing by charge sharing between two sense nodes is disclosed. A first sense node and a second sense node are pre-charged and the second node is discharged initiating charge sharing between the first sense node and the second sense node that results in an improved sense margin. Sensing circuitry disclosed herein may include one or more pre-charge circuits, sense enable circuits, and charge-sharing circuits. The increased sense margin achieved by sensing circuitry disclosed herein provides better noise immunity and more accurate sensing results.

Abstract: A memory system includes a first memory cell array which is a nonvolatile memory cell array, a controller configured to control read and write of data, a first data latch group used for input and output of the data between the controller and the first memory cell array, and at least one second data latch group in which stored data is maintained when the data is read from the first memory cell array by the controller. The controller is configured to store management information in the at least one second data latch group when or before executing a read process for the data from the first memory cell array, the management information being in a second memory cell array and used for read of the data.

Abstract: A method of providing an auxiliary power by an auxiliary power supply. The method may include converting an external power to a plurality of charging voltages; charging a charging circuit with a first charging voltage of the plurality of charging voltages; monitoring a voltage of the charging circuit; when capacitance of the charging circuit is less than a first reference capacitance, charging the charging circuit with a second charging voltage of the plurality of charging voltages, the second charging voltage being higher than the first charging voltage by a first voltage amount; and providing an auxiliary power to outside the auxiliary power supply. The auxiliary power may be generated based on the voltage of the charging circuit.

Abstract: Integrated circuit devices might include a voltage regulator comprising an input and an output, a selectively activated current path connected between the input and output, and a controller configured to cause the integrated circuit device to connect the output to the input through the current path when a voltage level of the input has a first voltage level, maintain the connection of the output and the input through the current path until the voltage level of the input has a second voltage level higher than the first voltage level, isolate the output from the input through the current path after the voltage level of the input has the second voltage level, and regulate a voltage level of the output while the output is isolated from the input through the current path.

Abstract: The present disclosure relates to a non-volatile memory device including at least an array of memory cells and with associated decoding and sensing circuitry and a memory controller, and a method for checking the erasing phase of the non-volatile device; the method comprises: performing a dynamic erase operation of at least a memory block; storing in a dummy row at least internal block variables of said dynamic erase operation and/or a known pattern.

Abstract: Systems and methods are disclosed including a memory device and a processing device operatively coupled to the memory device. The processing device can perform operations including performing a read operation on a block of the memory device by applying a read reference voltage to a selected wordline of the block and applying a pass-through voltage having a first value to a plurality of unselected wordlines of the block; detecting a read error in response to performing the read operation; and setting the pass-through voltage to a second value, wherein the second value is greater than the first value.

Abstract: Disclosed in some examples are improvements to data placement architectures in NAND that provide additional data protection through an improved NAND data placement schema that allows for recovery from certain failure scenarios. The present disclosure stripes data diagonally across page lines and planes to enhance the data protection. Parity bits are stored in SLC blocks for extra protection until the block is finished writing and then the parity bits may be deleted.

Abstract: Various embodiments enable age tracking of one or more physical memory locations (e.g., physical blocks) of a memory die, which can be from part of a memory device. In particular, various embodiments provide age tracking of one or more physical memory locations of a memory die (e.g., memory integrated circuit (IC)) using one or more aging bins on the memory die, where each aging bin is associated with a different set of physical memory locations of the memory die. By use of an aging bin for a set of physical memory locations, various embodiments can enable a processing device that interacts with a memory die, after the memory die has been subjected to one or more reflow soldering processes, to determine how much the set of physical memory locations have aged after the one or more reflow soldering processes.

Abstract: An anti-fuse unit and an anti-fuse array. The anti-fuse unit includes an anti-fuse device and a diode. An anode of the anti-fuse device is electrically connected with a bit line, a cathode of the anti-fuse device is electrically connected with an anode of the diode, and a cathode of the diode is electrically connected with a word line.

Abstract: Provided are a method for testing a memory, an apparatus for testing a memory, a computer-readable storage medium, and an electronic device, which relate to the field of integrated circuit technology. The method for testing a memory includes: writing first data into each of memory cells of a memory array; enabling a data mask mode, and writing second data into each of the memory cells of the memory array; enabling a leakage mode, and writing the first data into a memory cell corresponding to a column under test of the memory array; and after preset leakage time, disabling the leakage mode, and reading data from the memory cell corresponding to the column under test for testing, to determine whether there are at least two columns simultaneously turned on in the memory array. This method may test whether a row decoder fails.

Abstract: A storage device includes a storage circuit, a reading circuit, a first check circuit, and a second check circuit. The storage circuit includes a plurality of sense amplifier arrays and a plurality of storage unit arrays which are arranged alternately. A first data wire is electrically connected to each of the sense amplifier arrays. The reading circuit is configured to read data on the first data wire. Both the first check circuit and the second check circuit are electrically connected to the reading circuit. The reading circuit is configured to transmit a part of the read data to the first check circuit for error checking and/or correcting, and transmit another part of the read data to the second check circuit for error checking and/or correcting. The data transmitted to the first check circuit and the data transmitted to the second check circuit are respectively from adjacent sense amplifier arrays.

Abstract: An apparatus can include an array of memory cells and control circuitry coupled to the array of memory cells. The control circuitry can be configured to store a number of trim settings and receive signaling indicative of a use of the array of memory cells. The control circuitry can be configured to determine an adjustment to the number of trim settings based at least in part on the signaling.

Abstract: Method for testing an integrated circuit device, by defect modelling of the integrated circuit device, fault modelling of the integrated circuit device based on the information obtained from the defect modelling, test development based on information obtained from the fault modelling, and executing the test on the integrated circuit device. Defect modelling of the integrated circuit device including executing a physical defect analysis of the integrated circuit device to provide a set of effective technology parameters modified from a set of defect-free technology parameters associated with the integrated circuit device, and executing an electrical modelling of the integrated circuit device using the set of effective technology parameters to provide a defect-parametrized electrical model based on a defect-free electrical model of the integrated circuit device. The present methods allow parts-per-billion testing capabilities.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a transistor and a memory device. The transistor includes a source, a drain, and a gate. The memory device is disposed at a drain side of the transistor and coupled to the drain. The memory device includes a first electrode, a switch layer, a memory layer, and a second electrode disposed sequentially. The first electrode is coupled to the drain.

Abstract: A non-volatile memory device includes a plurality of wordlines, each comprising a plurality of cells, a hard decode configured to read each cell of the plurality of cells at a hard decode voltage, a left read sense configured to read voltage values of each cell to the left of the hard decode voltage at a left read sense voltage, a right read sense configured to read voltage values of each cell to the right of the hard decode voltage at a right read sense voltage, a first combiner configured to determine a difference of voltage values read by the left read sense and right read sense to produce a dispersion signal, and a second combiner configured to determine a sum of the voltage values read by the left read sense and right read sense to produce a deviation signal.

Abstract: The embodiments provide a method for reading and writing and a memory device. The method for reading and writing includes: applying a read command to the memory device, the read command pointing to address information; reading data to be read out from a memory cell corresponding to the address information pointed to by the read command; and associating the address information pointed to by the read command with a spare memory cell if an error occurs in the data to be read out. The method for reading and writing provided by the present disclosure greatly improves reliability of the memory device and prolongs lifespan of the memory device.

Abstract: A system and method for centrally logging and aggregating miscompares on chip during a memory test. The method includes performing, by a built-in self-test (BIST) unit of a memory device, a memory test on one or more memory banks of the memory device using a first algorithm. The method includes generating miscompare results responsive to performing the memory test on the one or more memory banks of the memory device. The method includes determining failure diagnostic information based on the miscompare results. The method includes generating an error packet comprising the failure diagnostic information and the miscompare results. The method includes placing the error packet in a queue of a plurality of error packets to generate a queued error packet.

Abstract: In some embodiments, a system comprises a static random access memory (SRAM) device and a controller. The SRAM device comprises a bit cell array comprising a plurality of bit cells arranged in a plurality of rows and a plurality of columns, each column operatively coupled to a pair of bit lines, wherein the plurality of columns is arranged as a plurality of column groups each comprising a plurality of local columns. The SRAM device further comprises a plurality of column decoders, each associated with a column group of the plurality of column groups. In some embodiments, the controller may be configured to read the local columns included in the column group by, for a given local column, sensing a voltage difference on a corresponding pair of bit lines, in a rearranged sequential order that is different from a physical sequential order of the plurality of local columns.

Abstract: A sequencer component residing in a first package receives data from a controller residing in a second package that is different than the first package including the sequencer component. The sequencer component performs an error correction operation on the data received from the controller. The error correction operation encodes the data with additional data to generate a code word. The sequencer component stores the code word at a memory device.

Abstract: Systems and methods are provided that combine a write duty cycle adjuster with write training to reduce detection and duty cycle errors in memory devices. Various embodiments herein perform write duty cycle adjuster operations to adjust a duty cycle of a clock signal that coordinates a data signal with a data operation on the memory device based on an error in the duty cycle, and performs write training operations to detect a skew between the data signal and the clock signal and adjust a sampling transition of the duty cycle of the clock signal to align with a valid data window of the data signal.

Abstract: Memory devices are disclosed. A device may include a number of memory banks and a number of latch sets, wherein each latch set is associated with a memory bank. The device may also include a fuse array including a number of fuses. The device may further include circuitry configured to read data from a first set of fuses of the number of fuses and broadcast data from the first set of fuses to a first latch set of the number of latch sets. Further, in response to a repair result associated with the first set of fuses being a first state, the circuitry may be configured to read a second set of fuses and broadcast the second set of fuses to the first latch set. Methods of operating a memory device, microelectronic devices, semiconductor devices, and electronic systems are also disclosed.

Abstract: A storage device having multiple storage dies is disclosed. The storage device comprises: a printed circuit board having a main surface, a plurality of universal input/output pins, placed on the main surface of the printed circuit board, and a plurality of random access storage dies, corresponding to the plurality of universal input/output pins, placed on the plurality of universal input/output pins.

Abstract: Methods, systems, and devices for memory with fine grain architectures are described. An apparatus may include a memory device, a first organic substrate, and a second organic substrate. The first organic substrate may include a plurality of first conductive lines arranged with a first pitch that may power one or more components of the memory device. The second organic substrate may be coupled with the memory device and the first organic substrate. The second organic substrate may include a plurality of second conductive lines arranged with a second pitch smaller than the first pitch and may be configured to route signals between the memory device with a host device.

Abstract: A device is disclosed and includes an input stage circuit, a switching circuit, and a first latch circuit. The input stage circuit generates a first input signal having a first voltage and a second input signal based on a third input signal. The switching circuit operates in response to a first control signal, and adjusts a voltage level of a first data line according to the first input signal and a voltage level of a second data line according to the second input signal. The first latch circuit is coupled to the switching circuit by the first data line and the second data line. The first latch circuit latches a data in response to the first control signal and a second control signal, and adjusts the voltage level of the first data line based on a second voltage different from the first voltage.

Abstract: A sense amplifier includes: an amplification circuit, configured to read data of a memory cell on a first bit line or a second bit line; and a first offset voltage storage cell and a second offset voltage storage cell, respectively and electrically connected to the amplification circuit, wherein in a case where the data in the memory cell on the first bit line is read, in an offset elimination stage of the sense amplifier, the sense amplifier is configured to store an offset voltage of the sense amplifier in the first offset voltage storage cell; and in a case where the data in the memory cell on the second bit line is read, in the offset elimination stage of the sense amplifier, the sense amplifier is configured to store the offset voltage of the sense amplifier in the second offset voltage storage cell.

Abstract: A data transmission circuit and method, and a storage device are provided. The data transmission circuit includes a serial-parallel conversion module, a comparison module, a data conversion module and a write circuit module. The serial-parallel conversion module receives a plurality of pieces of external data in batches and outputs initial parallel data according to the external data. The comparison module compares the received initial parallel data with global data to output a comparison result. The data conversion module, responsive to that the comparison result indicates that the preset threshold is exceeded, inverts the initial parallel data and transmits the inverted data to a data bus, and responsive to that the comparison result indicates that the preset threshold is not exceeded, transmits the initial parallel data to the data bus. The write circuit module transmits data on the data bus to a global data bus.

Abstract: Some memory dies in a stack can be connected externally to the stack and other memory dies in the stack can be connected internally to the stack. The memory dies that are connected externally can act as interface dies for other memory dies that are connected internally thereto. The external connections can be used for transmitting signals indicative of data to and/or from the memory dies while the memory dies in the stack can be connected by a cascading connection for transmission of other signals such as command, address, power, ground, etc.

Abstract: A semiconductor device is provided which includes a first control circuit including a first transistor in a silicon substrate channel, a second control circuit provided over the first control circuit, a memory circuit provided over the second control circuit, and a global bit line and an inverted global bit line that have a function of transmitting a signal between the first control circuit and the second control circuit. The first control circuit includes a sense amplifier circuit including an input terminal and an inverted input terminal. In a first period for reading data from the memory circuit to the first control circuit, the second control circuit controls whether the global bit line and the inverted global bit line from which electric charge is discharged are charged or not in accordance with the data read from the memory circuit.

Abstract: An exemplary memory is configurable to operate in a low latency mode through use of a low latency register circuit to execute a read or write command, rather performing a memory array access to execute the read or write command. A control circuit determines whether an access command should be performed using the low latency mode of operation (e.g., first mode of operation) or a normal mode of operation (e.g., second mode of operation). In some examples, a processor unit directs the memory to execute an access command using the low latency mode of operation via one or more bits (e.g., a low latency enable bit) included in the command and address information.

Abstract: Described herein are systems and methods for designing and testing custom biologic molecules in silico which are useful, for example, for the treatment, prevention, and diagnosis of disease. In particular, in certain embodiments, the biomolecule engineering technologies described herein employ artificial intelligence (AI) software modules to accurately predict performance of candidate biomolecules and/or portions thereof with respect to particular design criteria. In certain embodiments, the AI-powered modules described herein determine performance scores with respect to design criteria such as binding to a particular target. AI-computed performance scores may, for example, be used as objective functions for computer implemented optimization routines that efficiently search a landscape of potential protein backbone orientations and binding interface amino-acid sequences.

Abstract: A prenatal screening system includes a wet-laboratory arrangement and a data processing arrangement to exchange instructions and data with the wet-laboratory arrangement. The data processing arrangement includes a database arrangement storing genetic information accessible to one or more algorithms executable on the data processing arrangement. The wet-laboratory arrangement collects one or more maternal blood samples from a pregnant mother. The wet-laboratory arrangement isolates free fetal DNA fragments present in cell-free DNA derived from plasma of the one or more maternal blood samples. The isolation utilizes baits based upon coordinates of cell-free fetal DNA fragment specific end-points, and the data processing arrangement analyses the isolated free fetal DNA and compares with one or more DNA templates stored in the data processing arrangement for determining an occurrence of one or more biological characteristics of fetal DNA present in the one or more maternal blood samples.

Abstract: There is a need for more effective and efficient predictive data analysis solutions for processing genetic sequencing data. This need can be addressed by, for example, techniques for performing predictive data analysis based on genetic sequences that utilize at least one of cross-variant polygenic risk modeling using genetic risk profiles, cross-variant polygenic risk modeling using functional genetic risk profiles, per-condition polygenic clustering operations, cross-condition polygenic predictive inferences, and cross-condition polygenic diagnoses.

Abstract: A method for analyzing sequences performed by one or more processors is provided, including aligning first sequence data generated at a first time point based on reference sequence data, in which the first time point is a time point after reading of a first read of a pair of paired-end reads is completed and at which a second read of the pair of paired-end reads is partially read, identifying a structural variant from the aligned first sequence data, and before reading the second read is completed, generating a first report including information on the identified structural variant.

Abstract: The present disclosure provides methods for accurately predicting the dynamics of symptom response to drugs or other interventions for the treatment of major depressive disorder or other psychological conditions. These methods can allow for a shortening of the time period necessary for the evaluation of a drug or other therapeutic intervention. These predictive methods are based on measured and/or self-reported symptom severity measures at two or more points in time. These measures are then discretized into symptom classes (e.g., low, moderate, severe) and the symptom classes are then applied to the predictive model to predict the progression of symptoms and/or the effectiveness of a drug or other therapeutic intervention.

Abstract: A system and method for automated detection of the presence or absence of a quantity based on intensities expressed in terms of, or derived from frequency or time dependent data. According to one example intensities from mass spectrometry are identified using a non-linear mathematical model, such as an artificial neural network trained to find start and stop peaks of an intensity, from which an abundance may be determined.

Abstract: A system for activating a cued health assessment, which includes an audio receiver for receiving voice samples to measure one of a plurality of voice biomarkers, an audio processing module for extracting one of a plurality of biomarkers from the received voice samples, the audio processing module further classifies the received voice samples to one of plurality of predetermined health states according to the extracted biomarkers, and a voice sample scheduler for activating a cued health assessment module when the classified health state is a clinically actionable health state.

Abstract: An analysis instrument comprises a sample receiving section for receiving samples provided by a plurality of users, an analysis section operable to receive an aliquot of each received sample, perform an analysis of each received aliquot, and generate an output based on the analysis, and a presentation section adapted to present the output in a human discernable format. The analysis instrument further includes an identification section adapted to autonomously generate an identifier unique to each user and each sample provided thereby and to supply each identifier for presentation by the presentation section in a human discernable format together with a portion of the output that corresponds with one or more samples provided by a user to which the identifier is unique. Each identifier consists of one or more graphic symbols, one or more colours, and/or one or more numbers.

Abstract: A computer system for generating an insurance policy for a user includes a processor and a non-transitory, tangible, computer-readable storage medium having instructions stored thereon that, in response to execution by the processor, cause the processor to perform operations including: (i) receiving, from a wearable electronic user device, biometric data associated with a user; (ii) analyzing, based upon a plurality of rules, the biometric data; (iii) determining a health score associated with the user, based in part upon the analysis of the biometric data, wherein the health score represents a likelihood that the user will maintain a level of health for a predefined period of time; (iv) retrieving terms and conditions for an insurance policy from a database based upon the health score; and (v) generating, based upon the determining, an insurance policy for the user based upon the terms and conditions.