Abstract: A titanium alloy comprising Al 4.78 to 6.44 wt. %; V 3.65 to 5.15 wt. %; Mo 1.32 to 3.58 wt. %; Cr 0.75 to 2.28 wt. %; Fe 0.00 to 0.42 wt. %; C 0.00 wt. % to 0.10 wt. %; S 0.00 wt. % to 0.10 wt. %; N up to 500 ppm; O up to 2000 ppm and H up to 150 ppm; the balance being Ti and incidental elements and unavoidable impurities. Such a titanium alloy is useful for manufacturing gas turbine engine components including turbine blades and stators.

Abstract: A corrosion-resistant nickel alloy is provided. The alloy includes the following components in percentage by mass: 4.68-5.35% of B, 5.69-6.41% of W, 27.68-28.39% of Cr, 12.65-13.42% of Al, and the balance of Ni and inevitable impurities. The corrosion-resistant nickel alloy is a Ni—W—B ternary alloy with main components of Ni, W and B, wherein the three elements have strong high-temperature corrosion resistance at a temperature of about 600° C., and have the potential of solid solution hardening and precipitate formation because all belong to solid solution forming elements, so that a creep strength of a nickel alloy matrix is improved. Meanwhile, Al and Cr are further added in the alloy formula, so that Al2O3 and Cr2O3 oxide layers can be formed, which play a role as a physical diffusion barrier against chlorine gas and other corrosive gases.

Abstract: The present application relates to an aluminum alloy, in particular a cast aluminum alloy, a method for producing an engine component, in particular a piston for an internal combustion engine, in which an aluminum alloy is cast using the gravity die casting method, and an engine component, in particular a piston for an internal combustion engine, consisting at least partially of an aluminum alloy. The aluminum alloy consists of the following alloy elements: silicon: 10% by weight to <13% by weight, nickel: up to <0.6% by weight, copper: 1.5% by weight to <3.6% by weight, magnesium: 0.5% by weight to 1.5% by weight, iron: 0.1% by weight to 0.7% by weight, manganese: 0.1 to 0.4% by weight, zirconium: >0.1 to <0.3% by weight, vanadium: >0.08 to <0.2% by weight, titanium: 0.05 to <0.2% by weight, phosphorus: 0.0025 to 0.008% by weight, and the remainder being aluminum and unavoidable impurities. Furthermore, the microstructure of the alloy has spheroidized primary precipitates.

Abstract: Metal matrix composite particle mixtures are disclosed comprising (a) primary tungsten metal particles; (b) metal carbide particles; (c) substantially spherical fused carbide particles; and (d) a binder. The present invention also provides a metal matrix composite comprising metal matrix composite particle mixtures disclosed herein and binders.

Abstract: A die steel with a high thermal diffusion coefficient includes 0.30-0.40 wt. % of C, 0.05-0.10 wt. % of Si, 2.50-3.40 wt. % of Mo, 0.01-0.05 wt. % of Nb, 0.30-0.50 wt. % of Co, 0.01-0.05 wt. % of RE, the rest is Fe and unavoidable impurities, wherein in the die steel, P?0.15 wt. %, S?0.025 wt. %. A preparation method of the die steel includes steps of melting, electroslag remelting, electroslag ingot annealing, forging, spheroidizing annealing, quenching and tempering.

Abstract: The present invention provides a high-aluminum austenitic alloy and a high-aluminum austenitic centrifugal casting pipe. The high-aluminum austenitic alloy and the high-aluminum austenitic centrifugal casting pipe have excellent anti-corrosion capabilities and creep resistance at a temperature of 900° C. or above, while having required mechanical properties. In weight percentage, the high-aluminum austenitic alloy or the high-aluminum austenitic centrifugal casting pipe of the present invention is composed of the elements of: C, 0.3-0.7%; Mn, 0-0.5%; Si, 0-0.5%; Cr, 20-26%; Ni, 40-50%; Al, 3.5-5%; Ti, 0.01-0.3%; Zr, 0.01-0.3%; Nb, 0.1-1%; Ta, 0.01-2%; Mo, 0.01-1%; W, 0.01-1.9%; N, 0.001-0.04%; Re, 0.03-0.3%; the remainder being Fe and inevitable impurities. The present invention also relates to a method for manufacturing the high-aluminum austenitic alloy and the high-aluminum austenitic centrifugal casting pipe of the present invention.

Abstract: A hot-stamped product with improved delayed-fracture resistance is provided. The hot-stamped product 1 includes: a steel substrate 10; and an Al film 20 formed on the steel substrate 10, the Al film 20 including: an interface layer 21 located at the interface with the steel substrate 10 and with part of the ?Fe substituted by Al and Si; an intermediate layer 22 formed on the interface layer 21; and an oxide layer formed on the intermediate layer, the intermediate layer 22 including an Fe—Al—Si phase 22a with part of the ?Fe substituted by Al and Si, the Fe—Al—Si phase 22a including one or more elements selected from the group consisting of Zr, Ce, Y, Ta, Ni, Cu, Nb, Cr, Co, V and Ti, the oxide layer 23 including one or more elements selected from the group consisting of Be, Mg, Ca, Sr, Ba, Sc and Zn.

Abstract: A method for converting an existing steam methane reformer (SMR) to produce hydrogen via ammonia cracking is provided. The method can include the steps of: providing the existing SMR, wherein the SMR was formerly used to produce hydrogen from a hydrocarbon feedstock; and improving the nitridation resistance of the inner surface of the equipment by adding a protective layer to an inner surface of equipment to be used in the existing SMR, wherein the equipment is selected from the group consisting of a catalyst tube, feed piping, a feed preheater, process gas heat exchangers, and combination thereof.

Abstract: A deposition apparatus includes a mask, a mask frame, a stage disposed on a rear surface of the mask frame, and first to third external force applying parts disposed on the stage. Each of the first portion and the second portion includes a support and a driving part which moves the support. The first to third external force applying parts applies external force to the mask frame to control a shape of the mask frame.

Abstract: The present invention relates to a coating for forming tools to be used in a forming operation of a workpiece material, wherein the coating is deposited on a substrate surface and the coating comprises a lower layer (10) and an upper layer (20), wherein the lower layer (10) is deposited closer to the substrate surface than the upper layer (20), wherein the lower layer (10) mainly comprises chromium nitride, and the upper layer (20) is deposited as multilayer formed by a plurality of A-layers (22) and B-layers (21) deposited alternate one on each other forming a sequence of . . . /A/B/A/B/A/B/ . . . -layers (22,21), wherein the A-layers (22) mainly comprise aluminum titanium nitride, and the B-layers (21) mainly comprise chromium nitride.

Abstract: A deposition apparatus includes: a chamber; a deposition source disposed in the chamber to include nozzles arranged in a first direction; and a deposition angle limiter disposed on the deposition source in the chamber. The deposition angle limiter includes: a low-incident angle limiting plate disposed between adjacent first and second nozzles among the nozzles and spaced apart from the first nozzle by a first height in a height direction intersecting the first direction; and a high-incident angle limiting plate surrounding at least a portion of the first nozzle and spaced apart from the first nozzle by a second height in the height direction. The first nozzle extends in the height direction.

Abstract: A cover arrangement comprised of at least two pieces for covering a crucible within an electron beam source assembly. The cover includes a cover body and a cover insert to be separate from and carried by the cover body, when the cover body is raised and lowered. This arrangement also allows the cover insert to be lowered until it comes to rest on top of the crucible. Upon contact between the cover insert and the crucible, the cover insert can partially decouple from the cover body, allowing the cover body to travel down slightly further, allowing it to come into contact with the water-cooled body that surrounds the crucible, while insuring that the crucible insert is in good contact with the crucible. Closing this gap helps stop material that is evaporating from the active crucible pocket from migrating to inactive pockets, located under the cover, during the evaporation process.

Abstract: Target assemblies for PVD chambers are provided herein. In some embodiments, a target assembly for a PVD chamber includes: a backing plate; and a target coupled to the backing plate and having a substrate facing surface opposite the backing plate, wherein a peripheral portion of the target includes an angled surface extending radially outward and toward the backing plate, wherein an annular portion of the angled surface has a surface roughness greater than a surface roughness of a remainder of the substrate facing surface of the target.

Abstract: The present disclosure provides a magnetron sputtering apparatus, including a process chamber, a bias power supply assembly, and an excitation power supply assembly. The process chamber is provided with a base assembly and a bias guide assembly. A target is arranged at a top of the process chamber. The base assembly is arranged at a bottom of the process chamber and is configured to support a wafer carrier, drive the wafer carrier to move, and heat the wafer carrier. The bias guide assembly is arranged at the base assembly and configured to support the wafer carrier. The bias guide assembly is electrically in contact with the wafer carrier. The bias power supply assembly is electrically connected to the bias guide assembly and configured to apply a bias voltage to the wafer carrier through the bias guide assembly.

Abstract: A method for improving the resistance of a ceramic PTC thermal element to reduction is provided, belonging to the technical field of preparation of electronic components. The ceramic PTC thermal element is barium titanate based. The method includes: filling a material container body with the barium titanate based ceramic PTC thermal element; loading the material container body containing the element into a magnetron sputtering apparatus; sputtering, by the magnetron sputtering apparatus, an inorganic material as a target material onto the surface of the element when the material container body is in a rotating state, thereby forming a thin film layer of the inorganic material on the surface; and after the magnetron sputtering is completed, taking out the material container body containing the element with the thin film layer of the inorganic material combined on the surface, and performing high-temperature heat treatment.

Abstract: The invention provides a deposition equipment with a shielding mechanism, which includes a reaction chamber, a carrier, a cover ring and a shielding mechanism. The shielding mechanism includes a first bearing arm, a second bearing arm, a first shielding plate and a second shielding plate. The first and second shielding plates are respectively placed on the first and second bearing arms. There are corresponding alignment units between the lower surface of the first and second shielding plates and the upper surface the carrier, so that the first and second shielding plates can be aligned with the carrier. There is also a corresponding alignment unit between the upper surface of the first and second shielding plates and the lower surface the cover ring, so that the cover ring can be aligned with the first and second shielding plates to define a cleaning space in the reaction chamber.

Abstract: A gate valve, a substrate processing apparatus, and a substrate processing method which can improve the airtightness and cleanliness of a vacuum processing chamber and a vacuum preliminary chamber. A gate valve has a face facing a vacuum processing chamber and a face facing a vacuum preliminary chamber, the faces abutting on annular sealing members surrounding entire circumferences of substrate loading/unloading ports of the vacuum processing chamber and the vacuum preliminary chamber, and openably and closably connects the vacuum processing chamber and the vacuum preliminary chamber. The gate valve includes sealing channels provided between the sealing members doubly provided outside and inside surrounding the entire circumference of at least one of the substrate loading/unloading ports and between other sealing members doubly provided outside and inside in one or more parts inside the gate valve, and a gas circulation channel including the sealing channels.

Abstract: Disclosed is a method of forming an area-selective thin film, the method comprising supplying a nuclear growth retardant to the inside of the chamber in which the substrate is placed, so that the nuclear growth retardant is adsorbed to a non-growth region of the substrate; purging the interior of the chamber; supplying a precursor to the inside of the chamber, so that the precursor is adsorbed to a growth region of the substrate; purging the interior of the chamber; and supplying a reaction material to the inside of the chamber, so that the reaction material reacts with the adsorbed precursor to form the thin film.

Abstract: Methods for depositing a molybdenum nitride film on a surface of a substrate are disclosed. The methods may include: providing a substrate into a reaction chamber; and depositing a molybdenum nitride film directly on the surface of the substrate by performing one or more unit deposition cycles of cyclical deposition process, wherein a unit deposition cycle may include, contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor, and contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor. Semiconductor device structures including a molybdenum nitride film are also disclosed.

Abstract: A system and method for controlling pressure in a foreline of a processing system are disclosed herein that reduce variation in foreline pressure. In one example, a processing system is provided that includes a first process chamber, a first pump, a foreline, and a first foreline pressure control system. The first pump has an inlet and an outlet. The inlet of the first pump coupled to an exhaust port of the first process chamber. The foreline is coupled to the outlet of the first pump. The first foreline pressure control system is fluidly coupled to the foreline downstream of the first pump. The first foreline pressure control system is operable to control a pressure in the foreline independent from operation of the first pump.

Abstract: A piping includes a first pipe part having a first end connected to a processing chamber and a second end connected to another piping; a second pipe part connected to the first pipe between the first end and the second end, and configured to supply hydrogen gas or hydrogen radicals into the first pipe part; a valve provided between the second pipe part and the second end, and configured to open and close the first pipe part; and a metal film coated on an inner wall of the first pipe part.

Abstract: Gas distribution apparatuses described herein include a mixing plate adjacent a back plate of a showerhead. The mixing plate has a back surface and a front surface defining a thickness of the mixing plate. The mixing plate has a mixing channel comprising a top portion and a bottom portion defining a mixing channel length and at least two gas inlets in fluid communication with the top portion of the mixing channel. The gas distribution apparatus also includes a mixer disposed within the thickness of the mixing plate in the top portion of the mixing channel. The mixer has a top plate and a mixer stem extending from the top plate and a plurality of blades positioned along the mixer stem length. Also provided are processing chambers including the gas distribution apparatuses described herein.

Abstract: In some embodiments, a showerhead assembly includes a heated showerhead having a heater plate and a gas distribution plate coupled together; an ion filter spaced from the heated showerhead; a spacer ring in contact between the heated showerhead and the ion filter; a remote plasma region between the heated showerhead and the ion filter; an upper isolator spaced from the spacer ring and supported on the ion filter; a sealing ring fastened to the heated showerhead sealing against the upper isolator and pushing the upper isolator against the ion filter; a gap between a bottom of the gas distribution plate and a top of the ion filter, the gap being in fluid communication with the remote plasma region; a first passage extending through the heater plate; and a second passage in communication with the first passage and extending through the gas distribution plate, the second passage extending to the gap.

Abstract: A substrate processing apparatus configured to from a layer on a plurality of substrates is disclosed. Embodiments of the presently described substrate processing apparatus comprise a process chamber. The process chamber comprises process space for receiving a substrate boat arranged for holding the plurality of substrates. The substrate processing apparatus further comprise a gas delivery assembly comprising at least one gas injector; a gas exhaust assembly comprising two gas outlets. The two gas outlets are positioned at a distance on either side of the at least one gas injector.

Abstract: A flow control arrangement includes a source conduit, a supply conduit, a shutoff valve, and a slow-close actuator. The shutoff valve connects the source conduit to the supply conduit. The slow-close actuator is connected to the shutoff valve to close the shutoff valve during a slow-close interval, the pyrophoric material detector is operably connected to the slow-close actuator to close the shutoff valve upon detection of a metastable mass of a pyrophoric material outside of the flow control arrangement, and the slow-close interval is sized to limit shock communicated to the metastable mass by closing of the shutoff valve and prevent rapid deflagration or detonation of the metastable mass of the pyrophoric material. Semiconductor processing systems including the flow control arrangement and related flow control methods are also described.

Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes a table rotatable around a first axis, a first holder being arranged in a non-rotatable or rotatable manner on a first side of the table and at least one means for processing a substrate in the first substrate plane and directing towards the first side of the table. Furthermore, the substrate processing apparatus includes a pyrometer being arranged on a second side of the table, the second side of the table facing away from the first side of the table, and an optically operative connection between the pyrometer and the side of a substrate, when positioned on the first holder, facing away from the at least one means for processing a substrate. Furthermore, a method of measuring the temperature of a moving substrate and the use of a substrate processing apparatus for measuring the temperature of a substrate are provided.

Abstract: A wafer support member that can move in the same chamber after a film has been formed on a wafer and enable processing of the film-formed wafer and a semiconductor manufacturing apparatus including the wafer support member are provided. The wafer support plate 10 includes a flat portion 1 configured to support a wafer W and an outer circumferential protruding portion 2, being disposed in a surrounding shape on an outer circumference of the flat portion 1 and being formed with a larger thickness than the wafer W. The flat portion 1 includes a perforated support portion 1A and an annular support portion 1B. The annular support portion 1B is disposed outside of the perforated support portion 1A and supports an outer circumferential end portion Wo of the wafer W.

Abstract: A substrate processing apparatus includes a vacuum chamber, a rotary table rotatably provided in the vacuum chamber, a stage having a mounting surface on which a substrate is mounted at a position spaced apart from a rotation center of the rotary table, a lift pin configured to be displaced relative to the stage through a through-hole of the stage to raise and lower the substrate, and a gas suctioning section configured to apply a suction force to the substrate via the through-hole when the lift pin is being lowered. The stage includes a groove on the mounting surface, the groove communicating with the through-hole and extending from the through-hole toward a center of the stage.

Abstract: A deposition apparatus comprises: an infeed chamber; a preheat chamber; a deposition chamber; and optionally at least one of a cooldown chamber and an outlet chamber. At least a first of the preheat chamber and the cooldown chamber contains a buffer system for buffering workpieces respectively passing to or from the deposition chamber.

Abstract: A chamber arrangement has a chamber body with upper and lower walls. A substrate support is arranged within an interior of the chamber body and supported for rotation about a rotation axis. An upper heater element array is supported above the upper wall and a lower heater element array supported below the lower wall. A pyrometer is supported above the upper heater element array, is optically coupled to the interior of the chamber body, and is operably connected to the upper heater element array. A thermocouple is arranged within the interior of the chamber body, is in intimate mechanical contact with the substrate support, and is operably connected to the lower heater element array. Semiconductor processing systems and material layer deposition methods are also described.

Abstract: A thermal processing apparatus comprises a reaction zone having a first and second opening, a conveyor system that transports a desired material from the first opening to the second opening, an exhaust system communicatively connected to the first opening, and a plenum positioned above the reaction zone that extends from about the first opening to about the second opening. A vented barrier between the plenum and the reaction zone comprises a plurality of vents arranged such that the density of vents is highest near the first opening and progressively lower toward the second opening. A gas supply and a gas heater are communicatively connected to the plenum to introduce and condition an atmosphere to the plenum that is released into the reaction zone through the vents.

Abstract: The present invention relates to a method for etching at least one surface of a plastic substrate, the method comprising the steps (A) to (C), wherein step (C) is an etching step including a contacting with an etching composition. The etching composition comprises permanganate ions and phosphoric acid, each in specifically defined concentration ranges.

Abstract: Deposition of Pt nanoparticles on UiO metal organic frameworks via solvothermal reduction is achieved by reducing Pt acetylacetonate (Pt(acac)2) in a UiO-66 and N,N-dimethylformamide (DMF) mixture at, for example, 130° C. for 18 hrs. Modification of reaction temperature and time can control the size of the Pt nanoparticles.

Abstract: It is provided a surface-treated steel sheet that can be produced without using hexavalent chromium and has excellent sulfide staining resistance and coating secondary adhesion. It is a surface-treated steel sheet having: a Sn plating layer; a metallic Cr layer disposed on the Sn plating layer; and a Cr oxide layer disposed on the metallic Cr layer, on at least one surface of a steel sheet, and the surface-treated steel sheet has a water contact angle of 50° or less and a total atomic ratio of K, Na, Mg, and Ca adsorbed on the surface to Cr of 5% or less.

Abstract: Methods and systems are disclosed for chemically treating surfaces of metal parts to increase wettability by contacting the metal parts with a treatment fluid. Metal parts are disclosed that have surfaces free of burrs and with wettability suitable for, as examples, adhesion, bonding, painting, welding, and other processes.

Abstract: A substrate processing apparatus includes a substrate processing unit and a controller. The substrate processing unit is configured to perform an etching processing on one or more substrates each having a silicon nitride film and a silicon oxide film on a surface thereof with a processing liquid containing a phosphoric acid aqueous solution and a silicic acid compound. The controller is configured to control individual components of the substrate processing apparatus. The controller includes a concentration control unit configured to control a phosphoric acid concentration of the processing liquid such that etching selectivity of the silicon nitride film with respect to the silicon oxide film falls within a given range from a beginning of the etching processing to an end thereof.

Abstract: An anode apparatus for mounting on an external surface of a concrete structure to provide cathodic protection of metal members in the concrete uses a pre-assembled body which is typically elongate carrying a longitudinal anode, which can be sacrificial or impressed current, together with a supporting material having a front face for attachment to the surface and an impermeable plastic covering material at the rear face covering the anode and the supporting material when the front face is attached to the surface of the concrete. A channel defined on the front face is arranged to receive a layer of a conformable ionically conductive adhesive material for attachment to the external surface. A distance of the edge of the covering material is arranged to be similar to a distance of the metal from the external surface such that wetting and drying effects of environmental moisture are the same for the anode as for the metal components.

Abstract: The present disclosure relates to a method for preparing a porous transport layer and the porous transport layer prepared therefrom. The method includes forming a base layer by an application process using a slurry for the base layer containing particles of a titanium family element, forming a first coating layer and a second coating layer independently by application processes using a slurry for the first coating layer containing particles of a first noble metal and a slurry for the second coating layer containing particles of a second noble metal, respectively, and disposing the first coating layer and the second coating layer on both surfaces of the base layer, respectively, and the slurry for the first coating layer further contains the particles of the titanium family element.

Abstract: The present invention relates to reusable metal substrate for photoelectrochemical solar water splitting applications. The process comprises preparing a surface of the metal substrate, coating the surface of the metal substrate using photoactive semiconductor thin films, forming a working electrode, scaling-up of the working electrode, and re-using the metal substrate. The present invention has advantages such as higher current, better handling, capability to reuse and capability of direct geometrical scale-up of the electrodes.

Abstract: The present disclosure relates to a method for treating an electromembrane process aqueous composition comprising sodium and/or potassium sulfate, said process comprising removing water from said electromembrane process aqueous composition under conditions suitable for substantially selectively precipitating sodium and/or potassium sulfate monohydrate.

Abstract: An interconnector for a solid oxide electrochemical cell stack of at least one embodiment includes a metal base that contains an iron-base alloy containing chromium, a protective film provided on a surface of the metal base, and an interlayer provided between the metal base and the protective film arranged to relieve stress.

Abstract: An electrolyzer comprising a first and a second electrode and an ion exchange membrane arranged in-between the first and the second electrode. Each electrode comprises a conductive element and a catalyst layer and at least one catalyst layer comprises a catalyst structure. The catalyst structure comprises a plurality of elongated nanostructures and a plurality of electrocatalyst particles attached to the plurality of elongated nanostructures, wherein the plurality of elongated nanostructures is arranged to control a position of the plurality of electrocatalyst particles relative to the ion exchange membrane.

Abstract: A porous ion-permeable separator membrane with an asymmetric pore structure in which the top of the membrane (the side opposite the porous substrate) has smaller pores than the pores in the rest of the polymer coating (i.e., closer to the porous substrate) is described. The porous ion-permeable asymmetric composite membrane comprises polymers, inorganic particles, and a porous substrate which is stable at a pH of 8 or higher.

Abstract: A system for drying hydrogen in a hydrogen production facility comprises an electrolyzer for producing a flow of hydrogen gas, a drying device configured to remove moisture from the flow of hydrogen gas, a compressor configured to receive the flow of hydrogen gas from the drying device, and a recirculation line connected to output of the compressor to recirculate at least a portion of the flow of hydrogen gas from the compressor to the drying device. A method of drying hydrogen in a hydrogen production facility comprises producing a flow of hydrogen gas with an electrolyzer, drying the flow of hydrogen gas with a drying device, compressing the flow of hydrogen gas from the drying device with a compressor, and recirculating at least a portion of the flow of hydrogen gas from the compressor to the drying device to maintain pressure distribution within the drying device.

Abstract: A hydrogen and oxygen gas production system, parts thereof, and methods associated therewith is provided. The system utilizes naturally occurring fissures on the ocean floor which expel superheated water at a high pressure. The system includes a bell shaped device attached to a tube, included within the bell is an electrolysis device, including a cathode/anode combination. The bell shaped device catches water expelled from the fissure and the electrolysis device pulls the water molecules apart into their individual components in their gaseous form, hydrogen and oxygen. The gasses then travel up the tube to an end of the tube located above sea level, wherein the gasses are separated from one another utilizing either their natural properties or a selectively permeable membrane. The system further provides a method for collecting the separated gasses from the tube and storing them in compressed tanks in a usable form.

Abstract: A casing structure of electronic device including a metal base plate, a transparent cathodic electrodeposition paints layer, and a transparent paints coating layer is provided. The metal base plate has brushed texture and high gloss surface. The transparent cathodic electrodeposition paints layer is disposed on the base metal base plate. The transparent paints coating layer is disposed on the transparent cathodic electrodeposition paints layer. A manufacturing method of casing structure of electronic device is also provided.

Abstract: Disclosed are a method for fabricating an enhancement mode transistor material, an enhancement mode transistor material fabricated thereby, an enhancement mode transistor including the same, and an amplifying circuit including the same. The method for fabricating an enhancement mode transistor material includes: a first step of mixing and reacting a solution including a conductive polymer and an ionic reactant including a negative ion that enables deprotonation of the conductive polymer.

Abstract: Synesthetic quartz crucibles for holding a silicon melt during growth of single crystal silicon ingots are disclosed. The crucibles may include a coating disposed on the inner and outer surface of the crucible body along the rim. The coating extends only partially down the sidewall of the crucible and may extend to or beyond the melt line of the crucible.

Abstract: Methods for producing a silicon ingot in which a horizontal magnetic field is generated are disclosed. The magnet position is controlled in at least two stages of ingot growth. The magnetic poles may be at a first position during the first stage of ingot growth and lowered to a second position in a second stage of ingot growth. By controlling the magnet position, the crystal-melt interface shape may be relatively more consistent.

Abstract: Methods for producing a silicon ingot in which a horizontal magnetic field is generated are disclosed. The magnet position is controlled in at least two stages of ingot growth. The magnetic poles may be at a first position during the first stage of ingot growth and lowered to a second position in a second stage of ingot growth. By controlling the magnet position, the crystal-melt interface shape may be relatively more consistent.