Abstract: A method, mechanisms and jig for handling a member of a crystal pulling apparatus are disclosed. The crystal pulling apparatus grows a single crystal from a melt of a crystalline material by a CZ method. Handling of a graphite crucible or the like of the crystal pulling apparatus, including a vertical moving operation, a swinging operation, or the like, is performed using a crane and a lifting jig. This makes it possible to readily move the member of the crystal pulling apparatus vertically and otherwise without relying on manual labor.

Abstract: A method and system for determining a diameter of a silicon single crystal being pulled from a silicon melt contained in a heated crucible. The melt has a surface with a meniscus visible as a bright area adjacent the pulled crystal. A camera generates an image of the interior of the crucible including a portion of the bright area adjacent the crystal. Image processing circuitry defines a central window region of the image having an elliptical shape at a position corresponding to an approximate center of the crystal and processes the image as a function of its pixel values to detect edges within the central window region. The image processing circuitry further groups the detected edges to define an object in the image corresponding to the crystal, determines a dimension of the defined object and determines an approximate diameter of the crystal as a function of the determined dimension of the defined object.

Abstract: An apparatus for measuring the weight of a crystal in a cable-type crystal pulling apparatus. A cable winding mechanism of the crystal pulling apparatus includes a guide pulley which is supported by a load plate and which changes the direction of the cable by 180 degrees, and a winding drum 8 which is disposed on a base plate and onto which the cable is wound. The load plate, on which a load due to pulling acts, is supported by a plurality of small-load load cells so that the load is equally distributed to the small-load load cells. Thus, the weight measuring apparatus can have a simple and low-cost structure, and the accuracy of measurement can be improved.

Abstract: A recharger system including a feeder and a feed conduit recharge polycrystalline silicon granules into a crucible after a run or operation of growing a single crystal silicon rod by the Czochralski method, thereby to prepare for a next run of crystal growing. The amount of holdup or backed-up supply of the silicon granules in the feed conduit is detected by a sensor provided on the feed conduit. A smooth and high-rate feed of the silicon granules is ensured by controlling the feed rate of the silicon granules from the feeder to the feed conduit and/or a descending velocity of the crucible by signals generated in the sensor as a function of the amount of the holdup or backed-up supply in the feed conduit.

Abstract: A process and an apparatus control the growth of a crystal, which growth is governed by a set of measurable and non-measurable variables. The process includes establishing an on-line simulation software working with a reduced number of variables, the reduction of variables being performed by using a projection algorithm; speeding up the on-line simulation software by generating data banks in which values of off-line precalculated variables are stored; tuning the on-line simulation software by adjusting the results predicted by on-line simulations to the results obtained by off-line simulations and by measurements; and establishing a control loop and controlling at least one of the variables in real time, the control loop using the speeded up and tuned on-line simulation software as an on-line observer.

Abstract: The winding drum of the cable-winding device is kept air-tight by an air-tight container. A lower elastic sealing member 1a is interposed between the air-tight container and the rotation table. The air-tight container, the lower elastic sealing member 1a, and the chamber are communicated with one another. The air-tight container and the chamber are filled with inert gases at less than atmospheric pressure. The rotation table, the weight sensors, the drive motor, the gear are disposed in the atmosphere. An arm is vertically installed on the rotation table. An upper elastic sealing member 1b is interposed between the end portion of the arm and the air-tight container. The upper elastic sealing member is communicated the interior of the air-tight container through a through hole. The arm support the top portion of the upper elastic sealing member.

Abstract: An image of the meniscus ring (21) between the crystal (20) and the melt (4) is formed by optical means (12, 24) on a sensor, the signals of which yield the actual value for the diameter of the crystal. Two optical measuring devices are provided, the optical paths of which are defined by base points on the meniscus ring (21) and two planes which are offset by 90.degree. to each other and which are parallel to the main axis of the crystal and in tangential contact with the meniscus ring (21). The two optical paths are preferably set up to intersect, their intersection being in the viewing window.

Abstract: A crystal pulling apparatus is disclosed which employs the Czochralski method. The crystal pulling apparatus is operated while a heater for heating a material melt in a crucible is controlled by the main controller of a main system. When maintenance of a heating state is disabled for some reason, a relay of a signal changeover circuit is switched so as to maintain the heating state under control of the backup controller of a backup system, thereby maintaining the material melt in a molten state. Thus, even when it becomes impossible for the main system to heat the material melt within the crucible, the material melt can be prevented from becoming solidified.

Abstract: Barrel reactor apparatus for chemical vapor deposition of a material on a semiconductor wafer having a cooling system which protects the semiconductor wafers from metals contamination caused by degradation of metallic surfaces of the barrel reactor. Degradation is caused by water reacting with other substances (e.g., HCl) in the barrel reactor. The cooling system has a controller which monitors the operational state of the barrel reactor and selects an operating setpoint based on the detected operational condition. As a result, the metallic surfaces of the barrel reactor are kept cool during operation to retard corrosive chemical reaction rates, and kept warmer than would be otherwise possible when the barrel reactor is not operating to prevent adsorption of water by and condensation of water onto the metallic surfaces.

Abstract: Method and system for use with a Czochralski crystal growing apparatus. The crystal growing apparatus has a heated crucible for melting solid silicon to form a melt from which the single crystal is pulled. The melt has an upper surface above which unmelted silicon is exposed until melted. A camera generates images of a portion of the interior of the crucible. Each image includes a plurality of pixels and each pixel has a value representative of an optical characteristic of the image. An image processor processes the images as a function of the pixel values to detect edges in the images and groups the detected edges as a function of their locations in the images to define objects in the images. The defined objects each include one or more pixels and at least one of the defined objects is representative of a portion of solid silicon which is visible on the melt surface.

Abstract: The invention is directed to preventing meltdown of conductive metal electrodes 5, 5 used to supply current to a heater 104 of a crucible 103. A single crystal pulling apparatus comprises: the heater 104 which encircles the crucible 103, and the pair of electrodes 5, 5, respectively threaded to a pair of graphite intermediate electrodes 6 of the heater 104, and a voltage source 9 for supplying power to the pair of electrodes 5, 5. A switch 11 switches the power on and off. A watthour meter 10a, continuously measures the current flowing through the heater 104. Investigation by the present inventors showed that in the case of a crack 8 in a lower portion of the intermediate electrode 6, minute fluctuations occurred in the measured value of the current, arising from an electric discharge phenomena in the crack 8 prior to meltdown of the electrodes 5, 5.

Abstract: An apparatus for holding a single-crystal semiconductor ingot which is stored in a pulling chamber of a single-crystal semiconductor pulling apparatus is disclosed. The apparatus includes a spindle; a base installed on the spindle and movable along the spindle; a pair of arms for holding the single-crystal semiconductor ingot; means for driving the arms; a pair of sensors for detecting the distance between the ingot and the arms; and a controller for driving the arms to the ingot according to the sensors; when each of the arms is detected to have a predetermined distance from the ingot, the controller stopping the movement of the arm; when both the arms have the predetermined distance to the ingot, the controller driving simultaneously both the arms to the ingot surface, thereby holding the ingot.

Abstract: The present invention relates to an apparatus for preparing a single crystal of silicon by which a high-quality single crystal of silicon can be prepared by changing the rotation rate of a crucible or a seed and a process for preparing a single crystal of silicon thereby. As compared with a conventional apparatus employing Czochralski method, which comprises a rotating axis of seed, a seed, a crucible, a heater, a rotary axis of crucible, a chamber and an adiabatic layer, the apparatus of the present invention is characterized by the improvement comprising means for controlling the rotation rate of the crucible or the seed, each of which consists of a D.C. voltage, a function generator, a voltage summing circuit and a stepping motor.

Abstract: A method and system for manufacturing a semiconductor device having a semiconductor layer using a pulsed laser includes the steps of generating a laser beam using a solid laser source, generating a multi-harmonic wave from the laser beam using a multi-harmonic oscillator, filtering the multi-harmonic wave, and irradiating the filtered wave onto the semiconductor layer.

Abstract: A single-crystal semiconductor pulling apparatus improves the crystallization rate by reinforcing the physical strength of the Dash's neck portion, and eliminate the process time difference depending on the experiences of operators. The single-crystal semiconductor pulling apparatus, which is according to the Czochralski method, includes controller for automatically controlling the pulling rate of a seed crystal and a melt temperature. The controller modifies a target value of a diameter of a crystal grown from the seed which is immersed from a first value to a second value. The first value is for ensuring dislocation-free state, while the second value is for retaining physical strength of the crystal. Furthermore, the controller is provided with the function of judging the crystal to be in dislocation-free state.

Abstract: The disclosed apparatus weighs a grown crystal that is being pulled from melt thereof. The lower end of a rope of known weight is connected to the crystal, while the upper end of the rope is connected to the drum of a rope-winding unit. The rope-winding unit includes a driver coupled to the drum so as to rotate the drum and wind the rope thereon, and the weight of the rope-winding unit including the drum and driver is known. At least one weight sensor is coupled to the rope-winding unit so as to measure the magnitude of gravity acting on the rope-winding unit. Whereby, the weight of the grown crystal is determined by subtracting the sum of the known weights of the rope and the rope-winding unit from the measured magnitude of the gravity acting on the rope-winding unit.

Abstract: A crystal puller cell (18) provides a low particulate environment for an individual crystal puller (28). The airflow within each cell is adjustable so that a particulate level appropriate to the activity within the cell is maintained, thereby avoiding the cost of maintaining an entire growing hall (10) at a constant high level of cleanliness. Each cell includes a multi-level floor (46) that includes an operator floor (48) and a maintenance floor (52). A door (62) at the maintenance floor level opens onto a maintenance aisle used to service the machines. A door (64), at the operator floor level, opens onto a clean aisle for transporting raw material and finished product. The cell walls can include magnetic shielding if a magnetic growing process is used to reduce exposure of operators and other machines to intense magnetic fields.

Abstract: A method and a device is provided for determining the diameter of a monocrystal growing at a crystallization boundary during the pulling of the monocrystal from a melt. The method includes imaging a part of the crystallization boundary on at least one mirror, observing the mirror image and determining the diameter of the monocrystal from the observed relative position of the crystallization boundary on the mirror image.

Abstract: A crystal-pulling apparatus incorporates a temperature sensor and an adjustable radiation shield. The temperature sensor measures temperatures of a melt surface adjacent to a solidification interface between a crystal and the melt. The radiation shield regulates radiational cooling of the melt. A control system adjusts the radiation shield in response to changes in the measured temperature of the melt for enhancing dislocation-free growth of the crystal.

Abstract: A semiconductor single crystal growing apparatus is vertically and telescopically provided with a seed holder. The seed holder comprises a seed-holding member for holding a seed and a suspending bolt for bolting the seed-holding member. The front end of the seed coincides with a datum point when the seed holder is moved to a top dead point.

Abstract: In order to prepare a large yttrium or lanthanoid based oxide superconductor crystal of higher quality, a method and an apparatus which can stably control the shape of a pulled crystal and stably maintain growth of the crystal from a melt are provided. A crystal of an oxide having a structure of RBa.sub.2 Cu.sub.3 O.sub.7-X (R: yttrium or lanthanoid element, 0.ltoreq.X.ltoreq.1) is pulled from a raw material melt which is stored in a crucible by a rotary crystal pulling shaft. During such pulling, a position of the surface of the raw material melt is measured with time to obtain a lowering speed of the surface in a direction substantially parallel to the crystal pulling direction, for adjusting the lifting speed of the crystal pulling shaft by this lowering speed.

Abstract: A method of automatically growing a single crystal by using a floating-zone method in which radio-frequency induction heating is utilized, wherein the shape of molten zone of a sintered rod material is judged by comparing an anode voltage in a radio-frequency oscillation tube with a radio-frequency current, or a change in the shape of molten zone is judged depending of a change in a radio-frequency current during the growth of the sintered rod material, and power for heating is controlled on the basis of the judgement.

Abstract: In forming an electrode 2 on a silicon oxide film 5 on a semiconductor substrate 4 through a silicon oxide film 5, for example, the gate electrode 2 is structured in a laminated structure of a plurality of polycrystalline silicon layers 6. The portion of the gate electrode 2 is formed by a method of manufacturing a thin film having a process of depositing amorphous layers and a process of crystallizing (recrystallizing) this amorphous material.

Abstract: System and method for determining the diameter of a silicon crystal being pulled from a silicon melt for controlling a silicon crystal growing apparatus. The melt has a surface with a meniscus which is visible as a bright ring adjacent the crystal. A camera generates an image pattern of a portion of the bright ring adjacent the crystal. Image processing circuitry detects a characteristic of the image pattern and defines an edge of the bright ring as a function of the detected characteristic. The image processing circuitry further defines a generally circular shape including the defined edge of the bright ring. The diameter of the crystal is then determined based on the diameter of the defined shape for use in controlling the crystal growing apparatus.

Abstract: An apparatus for precisely detecting the diameter of the single-crystal material which is fabricated by a continuously charged method is disclosed. Variables such as the crucible raising amount, the material charging amount and the weight of a growing single crystal can be detected by conventional detecting apparatus. A present melt surface position is obtained by initial melt surface position+the crucible raising amount +(material charging amount/crucible area)-(weight of the single-crystal/crucible area) and then provided to a diameter control apparatus. The sensing angle with respect to the initial melt surface position 3a is .theta.. The height from initial melt surface position 3a to one-dimensional image sensor 2 is h. The horizontal distance between the scanning line and the one-dimensional image sensor is r. When the melt surface falls by a distance of a .DELTA.h from position 3a to position 3b, the adjusted sensing angle .theta.' can be obtained from .theta.'=cos.sup.-1 [(h+.DELTA.h)/{(h+.DELTA.h).

Abstract: System for determining the diameter of a silicon crystal being pulled from a silicon melt for controlling a silicon crystal growing apparatus. The melt has a planar surface including a meniscus that is visible as a bright ring adjacent the crystal. A camera positioned above the melt surface and away from the crystal includes an image plane that is generally parallel to the melt surface and responsive to light from the bright ring for generating an image pattern of a portion of the bright ring. As such, the camera compensates for distortion of the image pattern caused by the position of the camera relative to the crystal. Image processing circuitry detects a characteristic of the image pattern and defines an edge of the bright ring as a function of the detected characteristic. The image processing circuitry further defines a generally circular shape including the defined edge of the bright ring.

Abstract: System and method for determining the diameter of a silicon crystal being pulled from a silicon melt for controlling a silicon crystal growing apparatus. The melt has a surface with a meniscus which is visible as a bright ring adjacent the crystal. A camera generates an image pattern of a portion of the bright ring adjacent the crystal. Image processing circuitry detects a characteristic of the image pattern and defines an edge of the bright ring as a function of the detected characteristic. The image processing circuitry further defines a generally circular shape including the defined edge of the bright ring. The diameter of the crystal is then determined based on the diameter of the defined shape for use in controlling the crystal growing apparatus.

Abstract: A device and method for detecting optimum protein crystallization conditions and for growing protein crystals in either 1g or microgravity environments comprising a housing defining at least one pair of chambers for containing crystallization solutions. The housing further defines an orifice therein for providing fluid communication between the chambers. The orifice is adapted to receive a tube which contains a gelling substance for limiting the rate of diffusive mixing of the crystallization solutions. The solutions are diffusively mixed over a period of time defined by the quantity of gelling substance sufficient to achieve equilibration and to substantially reduce density driven convection disturbances therein.The device further includes endcaps to seal the first and second chambers. One of the endcaps includes a dialysis chamber which contains protein solution in which protein crystals are grown.

Abstract: A method for controlling oxygen precipitation (106) in a silicon crystal (12) grown according to the Czochralski silicon crystal growing technique which includes the steps of forming a cylindrical portion (22) of the silicon crystal (12) from a reservoir of molten silicon (24) according to the Czochralski silicon crystal growing technique. The method includes the steps of terminating the Czochralski silicon crystal growing technique by forming a first tapered portion (101) in silicon crystal (12) at a predetermined rate. A second tapered portion (102) includes a cascaded middle portion (108) that connects to the first tapered portion (101) and that concentrates oxygen precipitation (106) within cascaded middle portion (108) and away from the cylindrical portion (22) of silicon crystal (12). At least a third tapered portion (104) is formed for separating silicon crystal (12) from molten silicon (24).

Abstract: Apparatus and methods for pulling a semiconductor crystal according to a Czochralski method are disclosed. The apparatus includes a crucible containing a melt, a crystal pulling mechanism which pulls the semiconductor crystal from the melt, a motor coupled to the crucible, and a control circuit for energizing the motor to rotate the crucible at a variable speed. The control circuit may energize the motor to rotate the crucible at a continuously varying acceleration and continuously varying rotational speed while the crystal pulling mechanism is pulling at least a portion of the semiconductor crystal from the melt in the crucible. The control circuit may also energize the motor to rotate the crucible at a rotational speed which monotonically increases and decreases.

Abstract: A system for monitoring the growth of crystalline films on stationary or rotating substrates includes a combination of some or all of the elements including a photodiode sensor for detecting the intensity of incoming light and converting it to a measurable current, a lens for focusing the RHEED pattern emanating from the phosphor screen onto the photodiode, an interference filter for filtering out light other than that which emanates from the phosphor screen, a current amplifier for amplifying and convening the current produced by the photodiode into a voltage, a computer for receiving the amplified photodiode current for RHEED data analysis, and a graphite impregnated triax cable for improving the signal to noise ratio obtained while sampling a stationary or rotating substrate. A rotating stage for supporting the substrate with diametrically positioned electron beam apertures and an optically encoded shaft can also be used to accommodate rotation of the substrate during measurement.

Abstract: A method for measuring a diameter of a single crystal ingot pulled up in a single crystal pulling apparatus comprising: calculating the weight of the pulled-up single crystal, calculating the descent amount of the melt surface relative to the crucible wall from the calculated pulled-up weight of the grown single crystal, and then either correcting the value of the ingot diameter actually measured by the optical sensor in response to the descent amount of the melt surface level or raising the crucible by an amount equal to the descent amount of the surface level.

Abstract: A silicon single crystal prepared by the Czochralski method including a neck having an upper portion, an intermediate portion, and a lower portion. The upper portion contains dislocations. The intermediate portion is between the upper and lower portions. A majority of the intermediate and lower portions has a diameter greater than 10 millimeters, and the lower portion is free of dislocations. The crystal also includes an outwardly flaring segment adjacent the lower portion of the neck, and a body adjacent the outwardly flaring segment.

Abstract: A method and apparatus in Molecular Beam Epitaxy (MBE) in order to grow thin films. The substrate is attached to the rotatable manipulator and its normal will be aligned parallel to the rotation axis in vacuum for providing a real time information on the growth parameters by ellipsometry. The apparatus includes a rotatable manipulator head where the substrate is attached to, and aligning elements to align the substrate normal sufficiently parallel to the rotation axis of the manipulator in vacuum.

Abstract: A biological macromolecular substances crystallization apparatus comprises a plate-like base, a lid having a concavity which defines an experimental vessel for crystallizing biological macromolecular substances when the lid is put on the base, a groove formed in the base of the experimental vessel for holding a first specimen solution for crystallizing biological macromolecular substances, a trench-like groove formed in the base of the experimental vessel for holding a second specimen solution for crystallizing biological macromolecular substances, tight sealing means for tightly closing the experimental vessel, a plug which is provided in the concavity in the lid, and which is pressed to cover said grooves and to separate said groove from said trench-like groove, and a valve which is provided in the concavity in the lid, and which equalizes an internal pressure in the experimental vessel to an external pressure.

Abstract: A temperature controlled source cell for use in the practice of thin film depositions by molecular beam epitaxy is described which includes an optical sensor for monitoring source temperature, the sensor including a light pipe having one end near the source and the other end coupled to a fiber optic probe which carries light from the light pipe to a remote optical detector.

Abstract: An ampoule failure system for use in material processing furnaces comprising a containment cartridge and an ampoule failure sensor. The containment cartridge contains an ampoule of toxic material therein and is positioned within a furnace for processing. An ampoule failure probe is positioned in the containment cartridge adjacent the ampoule for detecting a potential harmful release of toxic material therefrom during processing. The failure probe is spaced a predetermined distance from the ampoule and is chemically chosen so as to undergo a timely chemical reaction with the toxic material upon the harmful release thereof.The ampoule failure system further comprises a data acquisition system which is positioned externally of the furnace and is electrically connected to the ampoule failure probe so as to form a communicating electrical circuit. The data acquisition system includes an automatic shutdown device for shutting down the furnace upon the harmful release of toxic material.

Abstract: The density of a melt precisely represents the stability of the melt, so that the initiation of pulling-up operation can be determined on the basis of the changing rate of the density. The pulling-up operation may be started when the density becomes constant, or when the changing rate of the density with respect to the temperature becomes smaller. Since the melt or clusters do not include different minute structures, an obtained single crystal is of high quality free from minute faults or dislocations.

Abstract: Apparatus and method for detecting, determining, and imaging surface resistance corrosion, thin film growth, and oxide formation on the surface of conductors or other electrical surface modification. The invention comprises a modified confocal resonator structure with the sample remote from the radiating mirror. Surface resistance is determined by analyzing and imaging reflected microwaves; imaging reveals anomalies due to surface impurities, non-stoichiometry, and the like, in the surface of the superconductor, conductor, dielectric, or semiconductor.

Abstract: A process and an apparatus for carrying out the process provides for the accurate and simple control of the melt level when pulling single crystals according to the Czochralski process. The process comprises disposing a mechanical reference mark above the melt in such a way that it causes a reflection from the melt surface. An image of the metal surface is then recorded, and with the aid of the recorded image the distance of the mechanical reference mark from the melt surface is determined. An actual signal proportional to this distance is then generated and is compared with a set point signal, and the melt level is changed as a function of any difference observed.

Abstract: An apparatus for producing a semiconductor single-crystal grown by the Czochralski method includes a reference reflector disposed at the lower end of a gas rectifying tube, first and second optical systems disposed above the reference reflector for changing the direction of propagation of light from the horizontal to the vertical, and vice versa, a first position sensor composed of a first light source for emitting a light beam in a horizontal direction toward the first optical system, and a first photosensitive member which receives a reflection light reflected from the melt surface in a crucible, a second position sensor composed of a second light source for emitting a light beam in a horizontal direction toward the second optical system, and a second photosensitive member which receives a reflection light reflected from the reference reflector.

Abstract: In the present invention a signal is caused to fall on the molten liquid surface of single crystal raw material which was put into a crucible, the position of the molten liquid surface is measured by detecting the reflected signal coming from the molten liquid surface and the crucible is lifted according to the discrepancy to the set value.

Abstract: A varisized diffusion cell device (10) comprising a plurality of diffusion cells (18) arranged in rows (20A) to (20F) having progressively greater depths for growing high quality, diffraction grade crystals, is described. In use, the diffusion cells receive a quantity of crystallizing agent (32) that dissolves and diffuses through a head of solvent solution (34) to equilibrate with a drop (38) containing a subject macro-molecular material for growing crystals. The various depths of the diffusion cells provide various diffusion rates and therefore various equilibration rates. Through empirical methods, an optimum diffusion rate for a given crystal growth system can easily be determined.

Abstract: An apparatus for use in solidification of a doped electrically conducting material and for use in monitoring said solidification is provided. The apparatus includes a first forming means for forming a liquid of undoped material in thermodynamic equilibrium with a solid of the undoped material, and a second forming means for forming a liquid of doped material in thermodynamic equilibrium with a solid of the doped material. Solidification of the conducting material occurs at a solidification interface between the doped liquid and the doped solid in the second forming means. In one preferred embodiment, the apparatus comprises a conductive bridge for short-circuiting the liquids.

Abstract: A method of growing a single semiconductor crystal with a flat top. In order to grow a single flat top crystal, the InP crystal is pulled up after the temperature drop of the melt has almost stopped, at a point in time when a meniscus at the interface of solid-liquid can be seen over the whole circumference of the surface of the melt. This prevents a facet from appearing at the shoulder portion of the crystal, thus reducing the generation of twin crystals and drastically improves retension of single crystal formation.

Abstract: The growing portion of a single crystal 1 grown by the pull method is recorded and the image signal is output to a digitizing circuit 3 that converts the image signal into binary data. A memory device 4 stores the digitized images and the point P at the boundary between dark and light is detected by scanning the stored digitized images starting from the scanning-start pixel and proceeding in the direction parallel to the direction of single crystal pulling. The diameter D of the growing portion of the single crystal is determined based upon the boundary P, and the scanning-start pixel for the current operation is set at the pixel that is separated from the boundary Pb in the preceding operation by a preset number of pixels d in the opposite direction of the scan.

Abstract: A method for vaporizing an organometal compound and supplying the resulting vapor thereof to a crystal growth chamber which comprises the steps of heating an organometal compound to a predetermined temperature to obtain vapor of the compound at a predetermined vapor pressure and supplying, in a constant flow rate, the vapor to the surface of a substrate heated under a reduced pressure: an apparatus for vaporizing an organometal compound and supplying the resulting vapor thereof to a crystal growth chamber 11 comprising a first gas flow path for the vapor of the organometal compound which connects a container 20, in which the organometal compound is charged, to a crystal growth chamber heated under a reduced pressure through a first valve 21, a first massflow controller 22 and a second valve 23 in this order; and a constant temperature oven 24 and 25 for controlling the temperature of the container 20 and the first gas flow path extending from the container 20 to the second valve 23, are herein disclosed.

Abstract: The present invention provides control of single crystal growth after the recovery from power failure when controlling crystal growth in an automatic mode. A source voltage is supplied to a controller 70 through a no-break power supply 62. At the time of recovery from power failure, the controller continues the automatic operation mode with the same control output as that stored when power failure is detected (84, 85) if the power failure time t is t .ltoreq.t.sub.1 (for example, 1 second), switches the control mode to the manual control mode with the same control output as that stored when the power failure is detected (86, 87) if t.sub.1 <t.ltoreq.t.sub.2 (for example, 5 seconds), stops the crystal growth operation and switches the control mode to the manual control mode (88, 89) if t.sub.2 <t.ltoreq.t.sub.3 (for example, 600 seconds), and separates the grown crystal from a melt 22 by upwardly moving the crystal and upwardly moves a crucible 16 (90) if t>t.sub.3.

Abstract: A material processing apparatus includes a plurality of syringes provided detachable on a base member and containing fluids that are used for processing a material; A processing chamber is provided detachable on the base member for causing the material processing: An actuation mechanism actuates the plurality of syringes to supply the fluids in the syringes to the processing chamber; An interconnection fixture connects the plurality of syringes to the processing chamber for transporting the fluids in the plurality of syringes to the processing chamber. The plurality of syringes are provided detachable with respect to the interconnection fixture, and the processing chamber is provided detachable with respect to the interconnection fixture.