Abstract: In a state in which a SiC container (3) of a material including polycrystalline SiC is housed in a TaC container (2) of a material including TaC and in which an underlying substrate (40) is housed in the SiC container (3), the TaC container (2) is heated in an environment where a temperature gradient occurs in such a manner that inside of the TaC container (2) is at a Si vapor pressure. Consequently, C atoms sublimated by etching of the inner surface of the SiC container (3) are bonded to Si atoms in an atmosphere so that an epitaxial layer (41) of single crystalline 3C-SiC thereby grows on the underlying substrate (40).

Abstract: An apparatus of processing a target substrate is provided. The apparatus includes a processing chamber having a substantially cylindrical inner space, a mounting table disposed in the processing chamber and configured to mount thereon the target substrate, at least one supply line configured to supply a gas in a direction along an inner wall surface of a sidewall of the processing chamber to generate a swirl flow of the gas in the processing chamber, and a ventilator configured to exhaust the gas from the processing chamber. Further, in a direction intersecting an axis of the substantially cylindrical inner space, a flow velocity of the gas in a first region close to the inner wall surface is higher than a flow velocity of the gas in a second region where the mounting table is disposed.

Abstract: Provided are: a method for manufacturing a highly pure silicon by unidirectional solidification of molten silicon, that can inexpensively and industrially easily manufacture highly pure silicon that has a low oxygen concentration and low carbon concentration and is suitable for applications such as manufacturing solar cells; highly pure silicon obtained by this method; and silicon raw material for manufacturing highly pure silicon. A method for manufacturing highly pure silicon using molten silicon containing 100 to 1000 ppmw of carbon and 0.5 to 2000 ppmw of germanium as the raw material when manufacturing highly pure silicon by unidirectionally solidifying molten silicon raw material in a casting container, the highly pure silicon obtained by this method, and the silicon raw material for manufacturing the highly pure silicon.

Abstract: The present invention aims at providing a zone melting furnace thermal field with a dual power heating function and a heat preservation method. The zone melting furnace thermal field comprises a primary heating coil and an auxiliary heater, wherein the auxiliary heater has a wavy appearance bent repeatedly up and down and forms a circular loop by surrounding in the horizontal direction, wherein both end parts of the auxiliary heater are provided with ports and are connected with an auxiliary heating power supply through cables; and the auxiliary heating power supply is also sequentially connected with a data analysis module and an infrared temperature measuring instrument through single lines. The present invention can solve the problem of single crystal rod cracking caused by unreasonable distribution of the thermal field and overlarge thermal stress in the growth process of zone-melted silicon single crystals over 6.

Abstract: Methods are disclosed for inhibiting heat transfer through lateral sidewalls of a support member positioned beneath a crucible in a directional solidification furnace. The methods include the use of insulation positioned adjacent the lateral sidewalls of the support member. The insulation inhibits heat transfer through the lateral sidewalls of the support member to ensure the one-dimensional transfer of heat from the melt through the support member.

Abstract: The present invention relates to a high-output apparatus for manufacturing a polycrystal silicon ingot for a solar cell, and more particularly, to an apparatus for manufacturing a polycrystal silicon ingot by means of heating and melting raw silicon in a vacuum chamber, and then cooling the molten silicon, wherein the apparatus comprises: a plurality of crucibles arranged so as to be horizontally separated from one another within the vacuum chamber, and in each of which raw silicon is filled for manufacturing polycrystal silicon ingots; heating means provided at the outside of each of the crucibles so as to heat each crucible and melt the raw silicon filled therein; and cooling means for cooling the crucibles, so as to enable the silicon melted by the heating means to be cooled in one direction and be formed into polycrystal ingots.

Abstract: A ring-shaped resistance heater for supplying heat to a growing single crystal, contains an upper and a lower ring, which are electrically conductively connected by means of a loop adjacent to a ring gap of one ring, such that the flow direction of electric current which is conducted through the rings is opposite in the rings; connecting elements which hold the upper and lower rings together in a spaced apart relationship; and current leads for conducting electric current through the upper and lower rings.

Abstract: A seed crystal having a frontside surface and a backside surface is prepared. Surface roughness of the backside surface of the seed crystal is increased. A coating film including carbon is formed on the backside surface of the seed crystal. The coating film and a pedestal are brought into contact with each other with an adhesive interposed therebetween. The adhesive is cured to fix the seed crystal to the pedestal. A single crystal is grown on the seed crystal. Before the growth is performed, a carbon film is formed by carbonizing the coating film.

Abstract: The apparatus has a crucible for storing a solution; an inner container for storing a crucible; a heating container for storing the inner container, the heating container including heating elements, a container body provided with the heating elements and a lid combined with the container body; and a pressure vessel for storing the heating container and for charging an atmosphere comprising at least nitrogen gas. The lid also has a fitting surface to the container body that is inclined to a horizontal plane.

Abstract: A susceptor having a recessed portion and a ring-like step portion is arranged in a reaction chamber, and a plurality of through bores are formed in a bottom wall in the recessed portion excluding the step portion. A lift pin inserted in each of the through bores temporarily holds a wafer, then a lower surface of an outer peripheral portion of the wafer is mounted on the step portion to accommodate the wafer in the recessed portion, and a raw material gas is circulated in the reaction chamber to form an epitaxial layer on a wafer surface in the recessed portion. When forming the epitaxial layer on the wafer surface, the lift pin protrudes upwards from an upper surface of the bottom wall, and a height h of a top portion of the lift pin based on the upper surface of the bottom wall as a reference is set to the range from a position where the height h exceeds 0 mm to a position immediately before the lift pin comes into contact with the wafer.

Abstract: The present disclosure provides an apparatus for manufacturing a silicon substrate for solar cells using continuous casting, which can improve quality, productivity and energy conversion efficiency of the silicon substrate. The apparatus includes a crucible unit configured to receive raw silicon and having a discharge port, a heating unit provided to an outer wall and an external bottom surface of the crucible unit and heating the crucible unit to form molten silicon, a casting unit casting the molten silicon into a silicon substrate, a cooling unit rapidly cooling the silicon substrate, and a transfer unit disposed at one end of the cooling unit and transferring the silicon substrate. The casting unit includes a casting unit body having a casting space defined therein to be horizontally connected to the discharge port, and an assistant heating mechanism that preheats the casting unit body to control a solidification temperature of the silicon substrate.

Abstract: A method of producing rectangular seed bricks for use in semiconductor or solar manufacturing is disclosed. The method includes connecting an alignment layer to a top surface of a template, drawing alignment lines on the alignment layer to demarcate a plurality of nodes, connecting cylindrical rods to the alignment layer such that a center of each rod is aligned with a corresponding node, and slicing through the rods and the alignment layer with a wire web to produce rectangular seed bricks.

Abstract: The passivation of a nonlinear optical crystal for use in an inspection tool includes growing a nonlinear optical crystal in the presence of at least one of fluorine, a fluoride ion and a fluoride-containing compound, mechanically preparing the nonlinear optical crystal, performing an annealing process on the nonlinear optical crystal and exposing the nonlinear optical crystal to a hydrogen-containing or deuterium-containing passivating gas.

Abstract: An apparatus for manufacturing polycrystalline silicon whereby raw-material gas is supplied to one or more heated silicon seed rods provided vertically in a reactor so as to deposit the polycrystalline silicon on a surface of the silicon seed rod, having a seed rod holding member, made of conductive material, having a holding hole in which a lower end of the silicon seed rod is inserted, the holding hole having a horizontal cross-sectional shape with at least two corners, and the holding member having a screw hole extending from the outer surface of the seed rod holding member to at least the holding hole and formed at the location of at least two corners of the holding hole; and a fixing screw which fixes the silicon seed rod and is threaded through at least one of the screw holes.

Abstract: According to the present invention, there is provided a vertical heat treatment apparatus which is a vertical heat treatment furnace comprising at least: a reaction tube; a heat treatment boat configured to hold a substrate; a heater configured to heat the substrate; a gas introduction tube configured to introduce an atmospheric gas into the reaction tube; a gas supply tube connected to the gas introduction tube; and a gas port portion that is formed at a flange body provided under the reaction tube or the reaction tube and into which the gas introduction tube is inserted, wherein the gas introduction tube is connected to the gas supply tube through a joint outside the reaction tube, the joint has at least a metal short tube having a flange portion, and the gas introduction tube is inserted into a through hole formed by connecting the flange portion of the metal short tube to the flange portion provided at the gas port portion through an O-ring and further connected to the gas supply tube through the joint.

Abstract: Disclosed is a hot wall type substrate processing apparatus, including a processing chamber which is to accommodate at least one product substrate therein; a heating member which is disposed outside of the processing chamber and which is to heat the product substrate; a processing gas supply system connected to the processing chamber; and an exhaust system, wherein with a member from which a Si film is exposed being disposed such as to be opposed to a surface on which selective growth is to be effected of the product substrate, an epitaxial film including Si is allowed to selectively grow on a Si surface of the product substrate.

Abstract: A substrate processing apparatus comprises: a reaction chamber to process a substrate; a heating target object disposed in the reaction chamber to surround at least a region where the substrate is disposed, the heating target object having a cylindrical shape with a closed end; an insulator disposed between the reaction chamber and the heating target object to surround the heating target object, the insulator having a cylindrical shape with a closed end facing the closed end of the heating target object; an induction heating unit disposed outside the reaction chamber to surround at least the region where the substrate is disposed; a first gas supply system to supply at least a source gas into the reaction chamber; and a controller to control the first gas supply system so that the first gas supply system supplies at least the source gas into the reaction chamber for processing the substrate.

Abstract: A manufacturing method for three-dimensional GaN epitaxial structure comprises a disposing step, in which a substrate of LiAlO2 and a source metal of Ga are disposed inside an vacuum chamber. An exposing step is importing N ions in plasma state and generated by a nitrogen source into the chamber. A heating step is heating up the source metal to generate Ga vapor. A growing step is forming a three-dimensional GaN epitaxial structure with hexagonal micropyramid or hexagonal rod having a broadened disk-like surface on the substrate by reaction between the Ga vapor and the plasma state of N ions.

Abstract: The method for fabricating a free-standing group III nitride plate (6) comprises the steps of growing at a growth temperature within a growth reactor (7) a first group III nitride layer (2) on a foreign growth substrate (1); growing at the growth temperature within the growth reactor (7) a second group III nitride layer (5) on the first group III nitride layer (2); and separating by laser lift-off the second group III nitride layer (5) from the growth substrate (1) so as to form a free-standing group III nitride plate (6). According to the present invention, the step of separating the second group III nitride layer (5) from the growth substrate (6) is performed at the growth temperature and within the growth reactor (7), and the method further comprises a step of treating the first group III nitride layer (1) by laser treatment at the growth temperature within the growth reactor (7) so as to provide stress relaxation areas (4) in the first group III nitride layer (2).

Abstract: A crystal puller for melting silicon and forming a single crystal ingot and a feed tool for shielding a portion of the crystal puller during charging of the crystal puller are disclosed herein. The crystal puller includes a crucible for containing molten silicon. The feed tool includes a cylinder and a plate. The cylinder has an inner surface and an annular ledge formed in a portion of the inner surface. The cylinder has a diameter at the annular ledge that is less than a diameter of the cylinder at the inner surface. The plate is positioned on the annular ledge and includes a first section separate from a second section. The first section and the second section are operable to move laterally with respect to each other. The plate has a central opening formed in at least one of the first section and the second section.

Abstract: A manufacturing apparatus of polycrystalline silicon products polycrystalline silicon by depositing on a surface of a silicon seed rod by supplying raw-material gas to the heated silicon seed rod provided vertically in a reactor, includes: an electrode which holds the silicon seed rod and is made of carbon; an electrode holder which holds the electrode, and cooled by coolant medium flowing therein, wherein the electrode includes: a seed rod holding member which holds the silicon seed rod; a heat cap which is provided between the seed rod holding member and the electrode holder; and a cap protector having a ring-like plate shape, which covers an upper surface of the heat cap, and in which a through hole penetrating the lower-end portion of the seed rod holding member is formed.

Abstract: Affords nitride semiconductor crystal manufacturing apparatuses that are durable and that are for manufacturing nitride semiconductor crystal in which the immixing of impurities from outside the crucible is kept under control, and makes methods for manufacturing such nitride semiconductor crystal, and the nitride semiconductor crystal itself, available. A nitride semiconductor crystal manufacturing apparatus (100) is furnished with a crucible (101), a heating unit (125), and a covering component (110). The crucible (101) is where, interiorly, source material (17) is disposed. The heating unit (125) is disposed about the outer periphery of the crucible (101), where it heats the crucible (101) interior. The covering component (110) is arranged in between the crucible (101) and the heating unit (125).

Abstract: Materials of a nitride single crystal of a metal belonging to III group and a flux are contained in a crucible, which is contained in a reaction container, the reaction container is contained in an outer container, the outer container is contained in a pressure container, and nitrogen-containing atmosphere is supplied into the outer container and melt is generated in the crucible to grow a nitride single crystal of a metal belonging to III group. The reaction container includes a main body containing the crucible and a lid. The main body includes a side wall having a fitting face and a groove opening at the fitting face and a bottom wall. The lid has an upper plate part including a contact face for the fitting face of the main body and a flange part extending from the upper plate part and surrounding an outer side of said side wall.

Abstract: The present invention relates to an apparatus and method for purifying silicon using directional solidification. The apparatus can be used more than once for the directional solidification of silicon without failure. The apparatus and method of the present invention can be used to make silicon crystals for use in solar cells.

Abstract: A method for growing high-resistivity single crystals includes placing a raw material in a vacuum-sealable ampoule, heating the raw material in the vacuum-sealable ampoule to vaporize the moisture in the raw material, exhausting the vaporized moisture from the vacuum-sealable ampoule, vacuum-sealing the vacuum-sealable ampoule, heating the raw material in the vacuum-sealable ampoule to vaporize the oxide compounds in the raw material, cooling a bulb in a cap on the vacuum-sealable ampoule to produce condensed oxide compounds on an inner surface of the bulb, removing the bulb and the condensed oxide compounds from the vacuum-sealable ampoule, wherein the raw material in the vacuum-sealable ampoule comprises carbon as an impurity, and placing the vacuum-sealable ampoule comprising the raw material in a crystal growth apparatus to grow a high-resistivity crystal from the raw material.

Abstract: A method (and structure) of thermally treating a magnetic layer of a wafer, includes annealing, for a predetermined short duration, a magnetic layer of a single wafer.

Abstract: A support ring for supporting a monocrystalline silicon semiconductor wafer during a thermal treatment of the semiconductor wafer has outer and inner lateral surfaces and a curved surface extending from the outer lateral surface to the inner lateral surface, this curved surface serving for the placement of the semiconductor wafer. The curved surface has a radius of curvature of not less than 6000 mm and not more than 9000 mm for 300 mm diameter wafers, or a radius of curvature of not less than 9000 mm and not more than 14,000 mm for 450 mm diameter wafers. Use of the support ring during thermal treatment reduces slip and improves wafer nanotopography.

Abstract: Disclosed is a fabrication method of a metal nanoplate using metal, metal halide or a mixture thereof as a precursor. The single crystalline metal nanoplate is fabricated on a single crystalline substrate by performing heat treatment on a precursor including metal, metal halide or a mixture thereof and placed at a front portion of a reactor and the single crystalline substrate placed at a rear portion of the reactor under an inert gas flowing condition. A noble metal nanoplate of several micrometers in size can be fabricated using a vapor-phase transport process without any catalyst. The fabricated nanoplate is a single crystalline metal nanoplate having high crystallinity, high purity and not having a two-dimensional defect. Morphology and orientation of the metal nanoplate with respect to the substrate can be controlled by controlling a surface direction of the single crystalline substrate. The metal nanoplate of several micrometer size is mass-producible.

Abstract: Previously a number of techniques have been used in order to form single crystal or pre-determined crystallography components and articles. Each one of these techniques has its own particular problems, including susceptibility to error. By utilization of a bi-crystal experiment to determine melt-back length LM and by consideration of the ingress distance d from potential initiation nucleation points on a perimeter of a seed crystal, it is possible to determine a maximum ingress length d. By ensuring that the maximum ingress length d is less than or equal to a seed crystal diameter R, it is possible to project locus from potential nucleation points C1, C2 in terms of potential radii for stray grain propagation. As the seed crystal will have a known crystalline orientation, it will be possible to consider two divergent growth curves of the crystal in terms of the stray grains propagating from the point C1, C2.

Abstract: The present invention provides a high-temperature ionic state fluidized bed compound crystallization technology and an internal reactor structure thereof. The principle of the present invention is that reaction gas is effected by a group of high-frequency external magnetic fields and forms the high-temperature gaseous ion in the first quartz vacuum tube, then forms ion deposition diffusion in the second quartz vacuum tube preheated at constant temperature. As a result, other high-temperature gaseous ions except the silicon hydride are decomposed, rapidly deposited and crystallized in the ion diffusion chamber. And the un-decomposed silicon hydride gas is directly poured into the surface of the silicon heating body of the compound fluidized bed by the static negative high-voltage quartz spray hole to decompose and crystallize, or crystallize by a way of fluid state in the arched heating quartz tube communicating with the top of two quartz reaction furnaces.

Abstract: A seed crystal axis used in a solution growth of single crystal production system is provided to prevent formation of polycrystals and grow a single crystal with a high growth rate. The seed crystal axis includes a seed crystal bonded to a seed crystal support member between which is interposed a laminated carbon sheet having a high thermal conductivity in a direction perpendicular to a solution surface of a solvent. The laminated carbon sheet includes a plurality of carbon thin films laminated with an adhesive or a plurality of pieces with differing lamination directions arranged in a lattice. Alternatively, a wound carbon sheet including a carbon strip wound concentrically from the center or a wound carbon sheet including a plurality of carbon strips with differing thicknesses which are wound and laminated from the center may be provided.

Abstract: An apparatus for producing single crystal silicon comprising: an induction heating coil that is disposed around the polycrystalline silicon rod for fusing the polycrystalline silicon rod; an exothermic ring that has a quartz-coated member covering the conductive member; a support member that supports the exothermic ring and passes through a wall of the housing in a rotatable manner; an operating device that rotates the support member and reciprocates the exothermic ring between a heating position where the exothermic ring is positioned close to the induction heating coil and a stand-by position where the exothermic ring is receded from the heating position; a sealing member that is provided between the wall of the housing and the support member and maintains the hermitic therebetween; and a cooling flow path that is formed in the support member and flows a cooling medium.

Abstract: An enclosure that maintains the environment of one or more optical crystals and allows efficient frequency conversion for light at wavelengths at or below 400 nm with minimal stress being placed on the crystals in the presence of varying temperatures. Efficient conversion may include multiple crystals of the same or different materials. Multiple frequency conversion steps may also be employed within a single enclosure. Materials that have been processed specifically to provide increased lifetimes, stability, and damage thresholds over designs previously available are employed. The enclosure allows pre-exposure processing of the crystal(s) such as baking at high temperatures and allowing real time measurement of crystal properties.

Abstract: A dynamic surface anneal apparatus for annealing a semiconductor workpiece has a workpiece support for supporting a workpiece, an optical source and scanning apparatus for scanning the optical source and the workpiece support relative to one another along a fast axis. The optical source includes an array of laser emitters arranged generally in successive rows of the emitters, the rows being transverse to the fast axis. Plural collimating lenslets overlie respective ones of the rows of emitters and provide collimation along the fast axis. The selected lenslets have one or a succession of optical deflection angles corresponding to beam deflections along the fast axis for respective rows of emitters. Optics focus light from the array of laser emitters onto a surface of the workpiece to form a succession of line beams transverse to the fast axis spaced along the fast axis in accordance with the succession of deflection angles.

Abstract: A method and a device for producing oriented solidified blocks made of semi-conductor material are provided. The device includes a crucible, in which melt is received, and has an insulation which surrounds the crucible at least from the top and from the side and which is arranged at a distance therefrom at least above the crucible, and at least one heating device which is arranged above the crucible. The region inside the insulation above the crucible is divided by an intermediate cover in a process chamber and a heating chamber is arranged thereabove, where at least one heating element is arranged.

Abstract: An upper heater for use in the production of a single crystal, the upper heater having electrodes to which a current is supplied and a heat generating section which generates heat by resistance heating are provided, the upper heater being used when a single crystal is produced by a Czochralski method, the upper heater being placed above a graphite heater which is placed so as to surround a crucible containing silicon melt, wherein the heat generating section is ring-shaped and is placed so as to surround the crucible, and has slits formed from the inside and the outside of the heat generating section in a horizontal direction. As a result, the upper heater controls a crystal defect of the single crystal efficiently and improves the oxygen concentration controllability.

Abstract: Direct resistive heating is used to grow nanotubes out of carbon and other materials. A growth-initiated array of nanotubes is provided using a CVD or ion implantation process. These processes use indirect heating to heat the catalysts to initiate growth. Once growth is initiated, an electrical source is connected between the substrate and a plate above the nanotubes to source electrical current through and resistively heat the nanotubes and their catalysts. A material source supplies the heated catalysts with carbon or another material to continue growth of the array of nanotubes. Once direct heating has commenced, the source of indirect heating can be removed or at least reduced. Because direct resistive heating is more efficient than indirect heating the total power consumption is reduced significantly.

Abstract: Disclosed herein is an apparatus for manufacturing a polycrystalline silicon ingot for solar batteries having a door control device using a hinge. The apparatus includes a vacuum chamber, a crucible, a susceptor which surrounds the crucible, a heater which heats the crucible, and an insulation plate which is disposed below the susceptor and has an opening therein. The apparatus further includes a cooling plate which moves upwards through the opening of the insulation plate and comes into close contact with or approaches the lower end of the susceptor, a cooling plate moving unit which actuates the cooling plate, a temperature sensor which measures the temperature of the crucible, and a control unit which controls the temperature in the crucible and the cooling plate moving unit. Furthermore, a door is provided on the insulation plate to open or close the opening of the insulation plate. The hinge is provided between the door and the insulation plate.

Abstract: Semiconductor wafers of silicon are produced by pulling a single crystal from a melt contained in a crucible and slicing semiconductor wafers from the pulled single crystal, heat being delivered to a center of the growing single crystal at the boundary with the melt during the pulling of the single crystal, a CUSP magnetic field applied such that a neutral surface of the CUSP magnetic field intersects a pulling axis of the single crystal at a distance of at least 50 mm from a surface of the melt. An apparatus suitable therefore contains a CUSP field positioned such that a neutral field intersects the axis of the crystal in the crucible 50 mm or more from the melt surface.

Abstract: A method and apparatus for the deposition of thin films is described. In embodiments, systems and methods for epitaxial thin film formation are provided, including systems and methods for forming binary compound epitaxial thin films. Methods and systems of embodiments of the invention may be used to form direct bandgap semiconducting binary compound epitaxial thin films, such as, for example, GaN, InN and AlN, and the mixed alloys of these compounds, e.g., (In, Ga)N, (Al, Ga)N, (In, Ga, Al)N. Methods and apparatuses include a multistage deposition process and system which enables rapid repetition of sub-monolayer deposition of thin films.

Abstract: A process for producing silicon comprises the steps of a reduction step [1] of depositing silicon by reacting chlorosilanes and hydrogen in a reactor under heat and discharging an exhaust gas that contains hydrogen, oligomers of silanes, and a silicon powder; a carring step [2] of carrying the exhaust gas that has been exhausted in the step [1] while keeping a temperature of the exhaust gas at not less than 105° C.; a removal step [3] of supplying the exhaust gas that has been carried in the step [2] to a filter at a temperature of not less than 105° C. and discharging the exhaust gas from the filter at a temperature of not less than 105° C. to remove the silicon powder from the exhaust gas and give a mixed gas that contains the hydrogen and the oligomers of silanes; and a separation step [4] of cooling the mixed gas that has been obtained in the step [3] to separate the hydrogen as a gas phase from the mixed gas.

Abstract: A crystal-growing furnace system with an emergent pressure-release arrangement includes an isolated chamber and a furnace upper body. The top board is provided with an opening and three first guides, and the furnace upper body with a lower opening and three second guides, wherein the lower opening of the furnace upper body covers, correspondingly, on the opening of the top board. In case a crystal-growing furnace, combined oppositely by the furnace upper body and the furnace lower body, has an over-high internal pressure, the pressure will overcome the weight of, and lift up the furnace upper body. At this moment, the furnace upper body will slightly move upward and away from enclosing the furnace lower body, so that the over-high internal pressure in the furnace will be released immediately to prevent the furnace from being exploded and from resulting in public accidents.

Abstract: A population of nanocrystals having a narrow and controllable size distribution and can be prepared by a segmented-flow method.

Abstract: A crystal-growing furnace with a convectional cooling structure includes a furnace body, a heating room, and at least one heater. The heating room is accommodated in the furnace body, and includes an upper partition, a plurality of side partitions, and a lower partition. The upper partition is provided with an upper opening, and the lower partition with a central opening. Further, the heating room is provided with an upper door, a lower door, an upper driver, and a lower driver. When silicon slurry is to be cooled and solidified, cooling gaseous stream flows into a lower portion of the heating room through the central opening. Then the upper opening is opened by the upper door which is driven by the upper driver, so that heated gaseous stream is discharged from the upper opening and flows downward along furnace inside wall, and flows back to the heating room from the central opening.

Abstract: Disclosed therein is an apparatus for producing a polycrystalline silicon ingot for a solar cell, which has uniform crystal grains formed by solidifying silicon melted in a crucible using a cooling plate. The polycrystalline silicon ingot producing apparatus includes: a crucible for melting silicon; conveying shafts for adjusting the height of the crucible; heaters for heating the crucible; and a cooling plate located below the crucible for cooling the crucible.

Abstract: Provided are a single crystal cooler and a single crystal grower including the same. The single crystal cooler includes a cooling main body and a passage. The passage is formed on an inner wall and an outer wall of the cooling main body. The passage allows cooling materials to move therethrough. The single crystal cooler has a cylindrical shape. A first inner diameter R1 of the single crystal cooler is about 1.5 times or more greater than an inner diameter R2 of a single crystal grown by applying the single crystal cooler.

Abstract: A laser heated pedestal growth system for growing a periodically poled, single crystal rod having domain interfaces substantially parallel to the rod's long axis. Suitable crystalline ferroelectric feed materials have a Curie temperature no greater than ˜200° C. below its melting point and include Lithium Niobate and MgO doped Lithium Niobate.

Abstract: A substrate processing apparatus is used for radiating UV rays onto a target film formed on a target surface of a substrate to perform a curing process of the target film. The apparatus includes a hot plate configured to heat the substrate to a predetermined temperature, a plurality of support pins disposed on the hot plate to support the substrate, and a UV radiating device configured to radiate UV rays onto the target surface of the substrate supported on the support pins. The support pins are preset to provide a predetermined thermal conductivity to conduct heat of the substrate to the hot plate. The hot plate is preset to have a predetermined thermal capacity sufficient to absorb heat conducted through the support pins.

Abstract: The method of making a single crystal, especially a CaF2 single crystal, includes tempering, in which the crystal is heated at <18 K/h to a temperature of 1000° C. to 1350° C. and held at this temperature for at least 65 hours with maximum temperature differences within the crystal of <0.2 K. Subsequently the crystal is cooled with a cooling rate of at maximum 0.5 K/h above a limiting temperature between 900° C. to 600° C. and then further below this limiting temperature at maximum 3 K/h. The obtained CaF2 crystals have refractive index uniformity <0.025×10?6 (RMS) in a (111)-, (100)- or (110)-direction and a stress birefringence of less than 2.5 nm/cm (PV) and/or a stress birefringence of less than 1 nm/cm (RMS) in the (100)- or (110)-direction. In the (111)-direction the stress birefringence is <0.5 nm/cm (PV) and/or the stress birefringence is <0.15 nm/cm (RMS).

Abstract: A system for producing cast components from molten metal. One form of the present invention includes a system for the precision pouring of molten metal within a casting mold. The precision pouring system is driven by a pressure differential.