Abstract: An electrical resistance heater for use in a crystal puller used for growing monocrystalline silicon ingots according to the Czochralski method comprises a heating element sized and shaped for placement in a housing of the crystal puller generally above a crucible in spaced relationship with the outer surface of the growing ingot for radiating heat to the ingot as it is pulled upward in the housing relative to the molten silicon. The heating element has an upper end and a lower end. The lower end of the heating element is disposed substantially closer to the molten silicon than the upper end when the heating element is placed in the housing. The heating element is constructed such that the heating power output generated by the heating element gradually increases from the lower end to the upper end of the heating element.

Abstract: The invention relates to a reaction vessel (1) for producing a sample, in particular a crystal, from a substance in solution or in liquid form, having several reaction chambers (6) each forming a separate gas chamber, consisting of at least one housing part, and each reaction chamber (6) has a reservoir (7) and several reaction areas (8) co-operating therewith, connected to one another and to the reservoir (7) in order to exchange gas. The reservoirs and the reaction areas co-operating with them are disposed immediately adjacent to one another in rows, distributed in a predeterminable, identical manner, these rows running parallel with one another. Each row of reservoirs (7) therefore co-operates with at least one row of reaction areas (8).

Abstract: A substrate M having a thin film on its surface is supported on a support 4. A gas discharge opening 12A of hydrogen radicals which faces the thin film on the substrate is provided. A semiconductor thin film is deposited on the substrate M by supplying the thin film with hydrogen radicals H from the gas discharge opening 12A while the substrate M is cooled via to 40 K or less through heat conduction via the support 4 by means of refrigerator 3.

Abstract: A crystallization apparatus and method that is adapted to crystallize a semiconductor using a non-vacuum process. In the apparatus and method, laser beams are irradiated onto a substrate to grow a crystal unilaterally from the side surface of the substrate. Grain boundaries are minimized under the air atmosphere, so that a crystallization of the substrate can be made in a non-vacuum state to improve the throughput.

Abstract: A process is disclosed for producing an oxide single crystal, including the steps of: melting a raw material for a single crystal of an oxide inside a crucible, contacting a seed crystal with the resulting melt, growing the oxide single crystal by pulling-down the melt through an opening of the crucible in a given pulling-down axis, and fixedly holding the seed crystal and then reducing an angle of a given crystalline orientation of the seed crystal selected for growing the single crystal to the pulling-down axis.

Abstract: An apparatus for producing a polycrystalline silicon sheet includes a crucible, a heating unit for heating a starting material of silicon fed in the crucible, and a cooling unit for contacting a melt of the starting material melted by heating to a cooling face of a cooling member, thereby obtaining a polycrystalline silicon sheet in which crystals of silicon are grown, wherein the cooling face of the cooling member has a sheet adhering portion for providing a silicon starting point of crystallization and allowing adhesion of the polycrystalline silicon sheet of grown crystals and a sheet stripping portion for allowing easy stripping of the polycrystalline silicon sheet.

Abstract: This invention relates to fabrication of a single crystal of a compound semiconductor according to the vertical Bridgman method which improves a recess in the interface between solid and melt and can obtain a stable yield of single crystal growth characterized in that a part for discharging the heat of a crucible to the outside in the radial direction is formed at least in a part in the circumferential direction of a heater part for controlling the interface between solid and melt in a heater which surrounds the crucible and a semiconductor melt is gradually solidified from a lower part to an upper part in the crucible while maintaining the interface between solid and melt in a saddle shape, thereby growing a single crystal.

Abstract: A crystal growth vessel for growing a crystal within a main container has a crystal growth starting portion in which the crystal starts to grow, whereas the crystal growth starting portion is formed from a material having a thermal conductivity higher than that of a material of the main container.

Abstract: An apparatus for purifying metallurgical grade silicon to produce solar grade silicon has a container for holding molten silicon and one or more torches for providing oxygen and hydrogen gas to heat the molten silicon so that the reaction time is prolonged, to create turbulence, and to introduce silica powder and water vapor for reactions with molten silicon. The molten silicon is then directionally solidified.

Abstract: A low dislocation density silicon carbide (SiC) is provided as well as an apparatus and method for growing the same. The SiC crystal, grown using sublimation techniques, is preferably divided into two stages of growth. During the first stage of growth, the crystal grows in a normal direction while simultaneously expanding laterally. Although dislocations and other material defects may propagate within the axially grown material, defect propagation and generation in the laterally grown material are substantially reduced, if not altogether eliminated. After the crystal has expanded to the desired diameter, the second stage of growth begins in which lateral growth is suppressed and normal growth is enhanced. A substantially reduced defect density is maintained within the axially grown material that is based on the laterally grown first stage material.

Abstract: Disclosed are processes and reactor apparatus for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications. A.C. current, having a fixed or variable high frequency in the range of about 2 kHz to 800 kHz, is provided to concentrate at least 70% of the current in an annular region that is the outer 15% of a growing rod due to the “skin effect.

Abstract: A containment system (1) for use in cleaning of an MBE chamber contains a two part housing in a clam-shell like structure with upper (5) and lower (7) housing sections that are latched together (8) with the walls defining a containment region. The housing is secured to the face of the MBE chamber with the source flange cover of that chamber received through an opening in the rear wall (13 & 19). A closure (28) permits opening or closing a front access opening in the housing through which the containment region may be accessed. The housing includes a exhaust vent tube (11). The containment system includes the means for detecting fire (34) in the confinement region and extinguishing the fires (35) and exhausting any gases through the vent tube.

Abstract: A spherical object transport apparatus of the invention brings a spiral stream into contact with a first atmosphere containing a spherical object, selectively sucks the first atmosphere outward so as to engulf in the spiral stream for diffusing the first atmosphere outward, guides the spherical object so that the spherical object passes through the center of the transport apparatus, supplies a second atmosphere to the spherical object, and sends the spherical object together with the second atmosphere to the following step.

Abstract: A system and method for processing crystals is disclosed. The system includes a receiver tube for receiving semiconductor granules. The granules are then directed to a chamber defined within an enclosure. The chamber maintains a heated, inert atmosphere with which to melt the semiconductor granules into a molten mass. A nozzle, located at one end of the chamber, creates droplets from the molten mass, which then drop through a long drop tube. As the droplets move through the drop tube, they form spherical shaped semiconductor crystals. The drop tube is heated and the spherical shaped semiconductor crystals may be single crystals. An inductively coupled plasma torch positioned between the nozzle and the drop tube melts the droplets, but leaving a seed in-situ, or the droplets may be melted and a seed injected in-situ. The seed can thereby facilitate crystallization.

Abstract: The present invention relates to a method of producing a recrystallized-material-member by melting a given zone of a crystalline-material-member and moving the molten zone continuously along the crystalline-material-member to recrystallize a desired region of the crystalline-material-member, wherein dimension of the molten zone of the crystalline-material-member is controlled to be constant and/or quality of crystal of the recrystallized-material-member is controlled to be uniform.

Abstract: An atmospheric pressure chemical vapor deposition system includes plural meshed conveyer belts extending in parallel for transferring semiconductor wafers at intervals, a reactant gas injector located over the plural meshed conveyer belts for creating reacting zone over the conveyer belts and a driving mechanism for moving the plural conveyer belts, wherein the driving mechanism moves the conveyer belts at different speeds so as to give rise to a rotation of each semiconductor wafer in the reacting zone, thereby uniformly exposing the entire surface of the semiconductor wafer to the reactant gases, which creates the depositing conditions different in the reacting zone.

Abstract: The invention relates to a process for melting semiconductor material in a crucible which is located in a container, and is enclosed by a fixed heating device. The invention also relates to a heating device which is suitable for carrying out the process. The process is one wherein a heater of a displaceable heating device is lowered from a lock chamber above the container through an open shut-off valve into the container in the direction of the semiconductor material, and the semiconductor material is melted using the fixed heating device and the lowered heater. The heater is then raised back out of the container into the lock chamber after the semiconductor material has been melted. A door is provided in the lock chamber to allow the displaceable heater to be removed after the semiconductor material has been melted.

Abstract: The present invention relates to a manufacturing method for a monocrystal and to a monocrystal manufacturing device. The present invention relates to a technology for manufacturing a granular monocrystal, wherein: melt of melted raw material is made into a supercooled spherical melt; while the melt is levitated under microgravitational conditions, the free energy of a portion of the surface of the melt is reduced, and a monocrystal is grown. A monocrystal manufacturing device 31 comprises: a gold image furnace 35, a chamber 33, a raw material supply/retention mechanism 38; a drop tube 36 and a drop tube 37; a rotating plate 39; a recovery vat 40; and the like. Raw material 32a of semiconductor material is heated and melted and allowed to free fall in a vacuum inside drop tubes 36, 37. During the drop, rotating plate 39 comes into contact with a portion of the surface of supercooled spherical melt 32b, and a crystal nucleus is generated.

Abstract: A spherical object transport apparatus of the invention brings a spiral stream into contact with a first atmosphere containing a spherical object, selectively sucks the first atmosphere outward so as to engulf in the spiral stream for diffusing the first atmosphere outward, guides the spherical object so that the spherical object passes through the center of the transport apparatus, supplies a second atmosphere to the spherical object, and sends the spherical object together with the second atmosphere to the following step.

Abstract: This invention anneals a vertical stack of two or more groups of unseparated wafers, with approximately 10 wafers in each group. The invention makes it possible to anneal more wafers in a single annealing operation under a variety of conditions, including: oxygen outer diffusion annealing to form a denuded zone; annealing to control bulk micro defects and provide intrinsic gettering functions; annealing to enhance gate oxide integrity by eliminating crystal-originated particles from the wafer surface and internal grown-in or as-grown defects; and suppression of dislocation and slip in elevated temperature environments.

Abstract: A crystal plate 1 is grown in a continuous process by first purifying a crystal source material, a crystal melt or powder, in a purification station 3. Valves 7 control the flow of purified crystal melt or source powder 9 to a first hot zone 11, whose temperature is above the melt temperature of the crystal. A dopant source 17 with controller 19 provides dopant to the liquefied crystal 15. The first heater zone 21 surrounding the first hot zone 11 heats the crystal above its melting temperature. The second heater zone 27 produces a temperature in the second zone which is below the melt temperature of the crystal. The liquefied crystal, the liquid solid interface and the first portion of the crystal are supported in a boat-shaped crucible container with a bottom 31 and side walls. As the crystal leaves the support plate 31 it passes on to a conveyor 33. The crystal moves within an enclosure 43, which has a noble gas or noble gas and reactant gas atmosphere 45.

Abstract: The process of manufacturing silicon single crystals by the CZ method is significantly improved by the present apparatus wherein raw material (polycrystalline silicon) is automatically loaded into a quartz crucible. After a protection sheet (15) is employed to cover the inner side wall of the container (3), which has an inner diameter smaller than that of the quartz crucible (10), a present amount of polycrystalline silicon (17) is loaded from the loading means (6) into the container (3). The container (3) is then filled with pure water that is thereafter frozen into an ice block (22). Subsequently, the ice block (22) is raised up from the container (3). Thereafter, the protection sheet (15) is removed from the ice block (22) and the ice block (22) is loaded into the quartz crucible (10). The ice block (22) is then caused to melt and the quartz crucible (10) and polycrystalline silicon are caused to dry up. The above operations are performed by the conveying apparatus (1).

Abstract: A multi-shelled melt container is disclosed for liquefying and crystallizing substances which comprises at least an inner shell and a bearing shell. While the inner shell--which has a thin wall in comparison to the wall of the bearing shell--consists of an inert material with respect to the melt, the bearing shell serves exclusively to fixate and support the inner shell and is correspondingly constructed in a mechanically stable fashion. The device can also comprise means to pump the melt over into a collection vessel.

Abstract: An object of the present invention is to prevent introduction of cracks or defects into the grown single crystal and to obtain a compound semiconductor single crystal having a good crystallinity and no cracks. In the method, after ZnTe polycrystalline raw material and Te solvent are put in a crucible 3, they are heated by a heater 1 to make a solution by dissolving the ZnTe polycrystalline raw material in the Te solvent. The solution is solidified to grow a ZnTe single crystal by using the Bridgman method or the gradient freeze method, and thereafter, the remaining Te solvent in the crucible 3 is removed out of the crucible 3 by evaporation, and then the grown crystal is taken out of the crucible 3.

Abstract: A reaction chamber (2) is enclosed by a gas-tight wall (20), made of silicon carbide obtained by a CVD process at least on the inside (21) facing the reaction chamber (2). At least part of the silicon carbide of the wall (20) is sublimated and grown on a seed crystal (3) as a silicon carbide monocrystal (4).

Abstract: An apparatus for purifying metallurgical grade silicon to produce solar grade silicon has a container for holding molten silicon and one or more submergible torches for providing a flame surrounded by inert gas to heat the molten silicon so that the reaction time is prolonged, to create turbulence, and to introduce silica powder and water vapor for reactions with molten silicon. The molten silicon is then directionally solidified by providing the container in a coolant tank and controlling the coolant level with controllable valves so that further purification is achieved by segregating impurities.

Abstract: Bulk, low impurity aluminum nitride (AlN) single crystals are grown by sublimation or similar deposition techniques at growth rates greater than 0.5 mm/hr.

Abstract: According to the present invention, in the growth of an oxide single crystal or a compound semiconductor single crystal such as GaAs single crystal by the CZ method or LEC method, the tendency of concave solid-liquid interface shape at the periphery of the growing crystal can be suppressed to prevent polycrystallization without localized heating of the solid-liquid interface, while controlling the diameter of the growing crystal even when using a crucible with a larger diameter, thus improving the yield of crystal on a commercial scale. In the invention, the end of a cylindrical body having an inner diameter of larger than the predetermined diameter of straight part of the growing crystal is immersed in the raw material melt or liquid encapsulant and the crystal is pulled while preventing the shape of the solid-liquid interface from becoming concave by controlling the rotation rate of at least one of a crucible holding the raw material melt, the growing crystal and cylindrical body.

Abstract: An object of the present invention is to provide a method for the heat treatment of a ZnSe crystal whereby the crystal can be prevented from crystallinity deterioration and caused to have low resistivity without occurrence of precipitates in the crystal.The feature of the present invention consists in a method for the heat treatment of ZnSe comprising subjecting ZnSe crystal grown by a chemical vapor transport method using iodine as a transport agent to a heat treatment in a Zn vapor atmosphere and controlling a cooling rate after the heat treatment in 10 to 200.degree. C./min.

Abstract: A method and system for manufacturing a semiconductor device having a semiconductor layer using a pulsed laser includes the steps of generating a laser beam using a solid laser source, generating a multi-harmonic wave from the laser beam using a multi-harmonic oscillator, filtering the multi-harmonic wave, and irradiating the filtered wave onto the semiconductor layer.

Abstract: The invention concerns a crystallization furnace for a material with low thermal conductivity arid/or low hardness.This furnace can obtain high quality single crystals.This furnace comprises a heating chamber (1), heating means (13) to create a temperature profile along the center line of said chamber and thus define at least one heating zone (3), and at least one cooling zone (5) and a crucible (9) filled with a solution of a solute to be crystallized in a solvent, said crucible (9) being fixed and placed in the heating chamber (1) in the heating zone (3), characterized in that the furnace also comprises:a crystallization device (27) comprising a temperature homogenizer (29A) and a heat sink (29B) separated by a thermally insulating spacer (31), said temperature homogenizer, heat sink and insulating spacer being rigidly attached to each other, andmeans (37) of displacing said crystallization device (27) along the center line of the chamber and around said crucible (9).

Abstract: An improved vertical gradient freeze and vertical Bridgman compound semiconductor crystal growth apparatus capable of applying an axial magnetic field of about 1600G in the crystal growth axis direction using an electrical resistance type electromagnet which has a simple structure and can be installed easily, which includes a high temperature electric furnace arranged at an upper portion of the apparatus, a crystal growth reaction tube disposed within a low temperature electric furnace arranged below the high temperature electric furnace and having a reaction container disposed therein, and an electromagnet surrounding the intermediate portion of the high temperature electric furnace.

Abstract: The present invention provides an apparatus for permitting easy formation of a stable molten region and easy growing of even large-diameter single crystals, with a good-quality of single crystals, of which a floating zone melting apparatus of the infrared-ray concentrated heating type has halogen lamps at one side focal point of four oppositely arranged ellipsoidal reflecting mirrors along orthogonal axes with the inside surfaces thereof as the reflectors, and condensing infrared-rays reflected from the reflectors onto the other side focal point, thereby accomplishing heating, wherein the eccentricity is within a range of from 0.4 to 0.65.

Abstract: A high-pressure container 1 as a furnace casing is equipped with insulating cylinder 2 of an inverted glass shape, and heater elements 18 individually mounted on heater mounting plates 16 arranged in parallel to section vertically the space for arranging the heater elements 18 at a given interval in the insulating cylinder 2.For the procedures of single crystal growth by heating in a high-pressure gas atmosphere, the insulating cylinder 2 and the heater mounting plates 16 can suppress the effects of spontaneous convection of a high-pressure gas and the effects of the radiation heat from an adjacent heater element, as less as possible, so that the temperature controllability of each heating zone can be improved whereby the vertical temperature distribution in the furnace can be controlled appropriately. Also, a heater element 18 of a larger aperture size can be maintained at a stably supported state, whereby a single crystal of a larger dimension can be grown.

Abstract: An apparatus for growing single-polytype, single crystals of silicon carbide utilizing physical vapor transport as the crystal growth technique. The apparatus has a furnace which has a carbon crucible with walls that border and define a crucible cavity. A silicon carbide source material provided at a first location of the crucible cavity, and a monocrystalline silicon carbide seed is provided at a second location of the crucible cavity. A heat path is also provided in the furnace above the crucible cavity. The crucible has a stepped surface that extends into the crucible cavity. The stepped surface has a mounting portion upon which the seed crystal is mounted. The mounting portion of the stepped surface is bordered at one side by the crucible cavity and is bordered at an opposite side by the furnace heat path. The stepped surface also has a sidewall that is bordered at one side by and surrounds the furnace heat path.

Abstract: Method of forming a single crystal of ZnSe. A charge of material is loaded in a container. The charge of material is melted to create a melt of material. A single crystal is grown from the melt of material. Then, the grown crystal is brought out of contact with the wall surface of the container. The temperature of the crystal is varied across its phase transition temperature range while establishing a temperature gradient from one end of the grown crystal to the other end. This method is carried out, using a crystal grower comprising the container and an elevation member. The container is disposed inside a high-pressure vessel. The container tapers off downward and is provided with a hole extending from its lower end. The elevation member is inserted into the hole from below to push the grown crystal in a crucible upward. The container is composed of plural separable parts.

Abstract: An apparatus for a vapor-phase epitaxial growth of a thin film on a substrate, which attains a decrease in the transition width, and at the same time, enables the thin film to be formed in a uniform thickness. This apparatus comprises a reaction vessel 18 of a flat shape, supply nozzles 15 for feeding a source gas 19 from a peripheral part of the reaction vessel 18, a susceptor 13 for holding a semiconductor single crystal substrate(s) 12 substantially horizontally, an infrared heating lamp 14, and a gas outlet 11 provided in a central part of an upper wall of the reaction vessel 18. Owing to this apparatus, the source gas 19 is gathered in a central part of the reaction vessel 18 without forming a vortex and then is discharged through the gas outlet 11.

Abstract: Apparati and methods for varying the flux of a molecular beam emanating from an effusion cell are disclosed. The apparatus includes a means for controllably adjusting the angular distribution of a molecular field effusing from a source material within the effusion cell, therein adjusting the flux of the beam. The method herein disclosed, with respect to the related apparati, including the step of selectively altering the angular distribution of an effusing molecular field, produced by a heated source material, which comprises the molecular beam, thereby varying the flux of the beam.

Abstract: A method of producing a silicon single crystal by the floating-zone method, comprising the steps of: providing a polysilicon rod having an average grain length of 10 to 1000 .mu.m; heating a portion of the polysilicon rod to form a molten zone while applying a magnetic field of 300 to 1000 gauss to the molten zone; and passing the molten zone through the length of the polysilicon rod thereby the polysilicon rod is converted into a silicon single crystal ingot through a one-pass zoning of the floating zone method. An apparatus for reducing the method into practice is also described.

Abstract: An apparatus for zone-melting recrystallization of semiconductor films on semiconductor substrates includes a heater disposed opposite the front surface of a semiconductor substrate and moving across the semiconductor substrate at a uniform rate. The heater may be a strip heating element covered with an insulating and refractory material radiating less heat than the strip heating element. Since heat emitted from surfaces of the heating element except the surface opposite the substrate is intercepted by the insulating and refractory film, the width of the molten zone produced in the semiconductor film is reduced.

Abstract: A process for growing a silicon epitaxial layer on the main surface of a silicon substrate wafer using an apparatus for growing a silicon epitaxial layer is disclosed. The apparatus comprises a central injector passing a flow of a reactive gas past a central part of a horizontal chamber, peripheral injectors passing peripheral flows of the reactive gas past peripheral part of the chamber, a first controller controlling the mass flows of at least one of the silicon source, the dopant and hydrogen of the reactive gas fed by the central injector, and a second controller controlling the mass flows of at least one of the silicon source, the dopant and hydrogen fed by the peripheral injectors independently of the first controller. The process comprises control steps independently controlling the mass flows of the reactive gas by the first controller and the second controller.

Abstract: A laser-beam annealing apparatus that provides reliable, continuous control of the intensity of the laser beam used to perform the annealing process.

Abstract: Nitrogen-doped group II-VI compound semiconductor thin film manufacturing method and apparatus which are applicable to an MOVPE process. The group II-VI compound semiconductor thin film manufacturing method according to the present invention is characterized by the use of osmium as a catalyst to activate nitrogen molecules. The growth device according to the present invention has a construction wherein a nitrogen gas introducing pipe for blowing a nitrogen gas against a semiconductor substrate is disposed in a reaction chamber for growing the group II-VI compound semiconductor thin film by the MOVPE process and the osmium is disposed between the semiconductor substrate and the nitrogen gas introducing pipe.

Abstract: An apparatus for producing seed crystals in melts has a vertically oriented, closed vessel having a vessel base and having at least one inlet for the melt and having at least one outlet opening for the inoculated melt provided with seed crystals. A preferably annular region of the vessel wall is constructed as a cooling surface. In the interior of the vessel there is arranged a scraping unit which comprises a motor-driven rotating shaft which extends axially through the vessel as far as a point just short of the vessel base. At its end towards the vessel base, the shaft is provided with at least one scraping arm which, starting from the lower end of the shaft close to the vessel base, extends first in the direction towards the vessel wall and thence substantially parallel to the annular cooling surface and axially parallel to the drive shaft.

Abstract: A system for crystallization of polymers involving the use of a stationary housing with a rotor mounted for rotation within the housing. The rotor supports a plurality of spaced apart hollow discs and heated fluid is delivered to the interior of the discs. The polymer material to be treated is fed into the housing for heat exchange contact with the exterior surfaces of the discs. The rotation of the discs in addition serves as the propelling force for the material along the length of the housing at which point the material is discharged. The speed of rotation of the rotor is controlled to influence agitation and conveying of material in the housing to thereby control the crystallization reaction. A holdup mechanism which operates independently of the speed control is located adjacent the discharge location to contribute to the fixing of the residence time.

Abstract: Installation for the crystallization of an inorganic substance in a crystal slurry, by desupersaturation of a supersaturated solution, the installation comprising a crystallization chamber which has a vertical axis and is divided into a central zone (4) and an annular zone (5), a device (9, 10) designed to bring about a vertical translation of the slurry in the central zone (4) and a translation in the opposite direction in the annular zone (5), a device (8) for withdrawing slurry, comprising a tube (23, 24) which opens into one of the abovementioned zones, a member (14) for mechanical shearing of the slurry, comprising, a disc (17) carrying a ring of shearing teeth (19), and a tube (6, 31) passing through the cover (30) and serving to introduce anhydrous sodium carbonate, the tube (31) having a prolongation inside the crystallization chamber, over which prolongation a film of water is caused to circulate.

Abstract: The bond strength between a diamond and the substrate onto which it is deposited by the chemical vaporization method is decreased to the point where the diamond can be removed from the substrate as a free standing monolithic sheet. The bond strength can be decreased by polishing the substrate, removing corners from the substrate, slow cooling of the substrate after deposition, an intermediate temperature delay in cooling or the application or formation of an intermediate layer between the diamond and the substrate. The free standing sheet of diamond can be used as a laser lens, metallized to form a mirror, or silver soldered to tungsten carbide to form a cutting tool.