Abstract: The present invention provides a glass preform heating furnace in which the occurrence of arching is suppressed. The glass preform heating furnace is equipped with a susceptor (3); a slit heater (4); an insulator; and a furnace body, wherein, in the case that the space between the slit heater (4) and the susceptor or between the slit heater (4) and the conductive member closest to the slit heater is D, that the maximum value of the electric field in this space is E1, that the number of the slits in the slit heater is N, that the slit width of the slit heater is S, and that the maximum value of the electric field in the slit space is E2, the values of D, N and S are set so that E1?E2 is established.

Abstract: A method and apparatus for growing a semiconductor crystal include pulling the semiconductor crystal from melt at a pull speed and modulating the pull speed by combining a periodic pull speed with an average speed. The modulation of the pull speed allows in-situ determination of characteristic temperature gradients in the melt and in the crystal during crystal formation. The temperature gradients may be used to control relevant process parameters that affect morphological stability or intrinsic material properties in the finished crystal such as for instance the target pull speed of the crystal or the melt gap, which determines the thermal gradient in the crystal during growth.

Abstract: A method for making a large surface area silicon filament for production of bulk polysilicon by chemical vapor deposition (CVD) includes melting silicon and growing the filament from the melted silicon by an EFG method using a shaping die. The cross sectional shape of the silicon filament is constant over its axial length to within a tolerance of 10%. In embodiments, a plurality of identical and/or dissimilar filaments are grown simultaneously using a plurality of shaping dies. The filaments can be tubular. Filament cross sections can be annular and/or can include outwardly extending fins, with wall and/or fin thicknesses constant to within 10%. Filaments can be doped with at least one element from groups 3 and 5 of the Periodic Table. The filament can have a length equal to a length of a specified slim rod filament, and a total impedance not greater than the slim rod impedance.

Abstract: An implementation of a Czochralski-type crystal growth has been shown and embodied. More particularly, a furnace with suitable insulation and flow arrangement is shown to improve the cost-efficiency of production of crystals. That is achieved by the shown new hot-zone structure, gas flows and the growth process which can decrease the power consumption, increase the lifetime of hot-zone parts and improve the productivity, e.g., by giving means for opening the hot-zone and easily adapting the hot-zone to a new crystal diameter.

Abstract: Methods and apparatus for producing nanoparticles, including single-crystal semiconductor nanoparticles, are provided. The methods include the step of generating a constricted radiofrequency plasma in the presence of a precursor gas containing precursor molecules to form nanoparticles. Single-crystal semiconductor nanoparticles, including photoluminescent silicon nanoparticles, having diameters of no more than 10 nm may be fabricated in accordance with the methods.

Abstract: A crucible apparatus includes a hollow crucible body which is open at its upper and lower ends and a bottom plate which is formed separately from the crucible body and can close off the lower end of the crucible body. A space for receiving a molten material is formed by placing the crucible body atop the bottom plate. When molten material received in the space has solidified, the crucible body is raised off the bottom plate, and solidified material is pushed out of one end of the crucible body and removed from the crucible body.

Abstract: A method as well as an apparatus for manufacturing a tube according to the EFG-method. To manufacture tubes with a desired even wall thickness, it is proposed to draw the tube from a melt whose temperature can be controllably adjusted section by section.

Abstract: A microfluidic device for controllably moving a material of interest includes a holding cavity configured to hold the material of interest and at least one actuator configured to induce an activation material to expand or contract. Expansion of the activation material decreases the size of the holding cavity to cause the material of interest to be released from the holding cavity and contraction of the activation material increases the size of the holding cavity to cause the material of interest to be received into the holding cavity. The at least one actuator is operable at multiple levels between a zero induction level to a maximum induction level on the activation material to thereby controllably expand or contract the holding cavity to release or receive a specified volume of the material of interest.

Abstract: An improved mechanical arrangement controls the introduction of silicon particles into an EFG (Edge-defined Film-fed Growth) crucible/die unit for melt replenishment during a crystal growth run. A feeder unit injects silicon particles upwardly through a center hub of the crucible/die unit and the mechanical arrangement intercepts the injected particles and directs them so that they drop into the melt in a selected region of the crucible and at velocity which reduces splashing, whereby to reduce the likelihood of interruption of the growth process due to formation of a solid mass of silicon on the center hub and adjoining components. The invention also comprises use of a Faraday ring to alter the ratio of the electrical currents flowing through primary and secondary induction heating coils that heat the crucible die unit and the mechanical arrangement.

Abstract: A die for drawing crystals from a molten bath, has a body bored with at least one longitudinal capillary channel arranged between a lower face of the body. The die is intended to be immersed in the molten bath and an upper face of the body intended to support the liquid coming from the molten bath through the capillary channel. The die upper face has a flat surface onto which the capillary channel emerges, and this flat surface forms an angle &thgr; less than 90° with the longitudinal axis of the capillary channel.

Abstract: A new EFG (Edge-defined Film-fed Growth) crucible/die configuration is provided which (a) overcomes the tendency for silicon feed material to form a solid mass near the center hub region in the hot-zone during the crystal growth and (b) prevent the crucible/die unit from fracturing its supporting susceptor during cool-down.

Abstract: This invention relates to the apparatus and the process for producing single crystals with little OSF generation and excellent dielectric strength of gate oxide films by adjusting the temperature gradient of the silicon single crystal in the direction of pulling. The apparatus is provided with a crucible which contains the melt of the single crystal material, a heating element which heats the melt, a pulling shaft to grow the single crystal, a protective gas inlet pipe, and a chamber which contains all above mentioned components. In addition, the apparatus is provided with a circular cylinder or a cylindrical shaped heat resistant and heat insulating component below the protective gas inlet pipe noted above.

Abstract: A single crystal dome is formed from a surface of revolution and grown from a liquid material on a linear die surface wettable by the molten material. A seed crystal is supported in a position spaced from an axis of revolution which lies in the plane of the wettable surface, and the seed crystal is rotated around the axis of revolution to generate a curved surface having a predetermined radius of curvature. The seed crystal is supported in a predetermined orientation of one of its axes with respect to the wetted surface of commencement of growth.

Abstract: A high temperature heat exchanger is used with the Czochralski crystal growing method to control the heat extraction from crystal silicon ingots as they are grown. The high temperature heat exchanger also acts as a shaping die so that silicon bars, or ingots, of various shapes, including square, circular, rectangular or ribbon, can be produced by shaping during the growth stage.